JPH11121273A - Electronic component and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electronic component with a simple manufacturing process, low production cost and easily controlled ESR, and the manufacture thereof. SOLUTION: Dielectric layers and internal electrodes are laminated alternately to form a laminate. The internal electrodes and the terminal electrodes formed at the end of the laminate electrical components which are connected electrically. The terminal electrode is coated with a conductive glass. A paste containing a vehicle in which conductive materials and conductive glass are dispersed is applied on the laminated chip capacitor, then the capacitor is burnt in a neutral or reducing atmosphere to manufacture the electronic component.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a CR composite electronic component in which a resistance or impedance element is added to a multilayer capacitor having a nonmagnetic ceramic dielectric layer.

[0002]

2. Description of the Related Art Conventionally, switching power supplies and DC-DC converters have been used as power supplies in many electronic devices. These power supply capacitors include a power supply bypass capacitor. For the power supply bypass capacitor, a low-capacity multilayer ceramic capacitor and a high-capacity electrolytic capacitor such as aluminum or tantalum have been used according to the power supply capacity, switching frequency, and circuit parameters such as a smoothing coil used in combination. Was. By the way, in recent multilayer ceramic capacitors, the capacitance of multilayer ceramic capacitors has become equivalent to that of electrolytic capacitors with the progress of thinning of dielectrics and internal conductors and development of lamination technology. Attempts have been made to replace them with capacitors. However, when the multilayer ceramic capacitor is replaced with an electrolytic capacitor, the impedance of the multilayer ceramic capacitor in the operating frequency band is too low, that is, the equivalent series resistance (ESR) is too low, so that the step voltage of the input voltage of the three-terminal regulation changes. As a result, the waveform of the output power is disturbed. When an electrolytic capacitor is used, although the impedance is larger than that of the multilayer ceramic capacitor, heat is easily generated because the impedance is too large, and the smoothness of the power supply line is also deteriorated.

[0003] Therefore, there has been proposed an electronic component in which the equivalent series resistance (ESR) of a conventional multilayer ceramic capacitor is increased. For example, in Japanese Patent No. 2578264, a metal oxide film is formed on the surface of an external electrode and this is used as a resistor to increase the ESR, and the resistance value is controlled by the oxide film thickness. However, in this method, it is very difficult to control the oxidation of the terminal electrode, and if the degree of oxidation is a little too large, the internal electrode is also oxidized and cannot function as a capacitor. Also, even if only the terminal electrodes can be oxidized, the plating is formed by electroless plating when plating because the terminal electrodes are oxidized. It is necessary to coat the ceramic body with a resin or the like so as not to be plated, which not only complicates the process, but also significantly reduces the adhesiveness between the oxide and the Ni film, so that peeling occurs between them. There is a drawback that necessary and sufficient mechanical strength as an electronic component cannot be obtained.

Further, as described in, for example, JP-A-59-225509, a resistance-resistant paste such as ruthenium oxide is laminated on a multilayer ceramic capacitor, and this is simultaneously fired to form a resistor. I have. However, in this case, when the terminal electrode is provided as it is, the equivalent circuit is C /
It becomes a parallel circuit of R or (LC) / R, and a serial circuit cannot be obtained. Also, to obtain a series circuit,
The shape of the terminal electrode is complicated, and the manufacturing process is also complicated. Further, the resistor usually contains glass, and this glass is easily dissolved in the plating solution. Therefore, when plating, it is necessary to coat the resistor with a resin or the like so as not to expose the resistor to the plating solution, and the number of steps is increased.

[0005]

SUMMARY OF THE INVENTION The present invention has been made in view of such circumstances, and it is an object of the present invention to provide a multi-layer ceramic capacitor having chalcogenide glass, which is a conductive glass, provided on both end surfaces where an internal electrode is exposed. Is formed, a chalcogenide glass is floated on the surface of the terminal electrode, the surface of the terminal electrode is covered with the chalcogenide glass, and an electronic component for controlling the ESR with the coated glass layer and a method of manufacturing the same are provided. is there.

[0006]

The above object is achieved by the following (1).
(10).

(1) Dielectric layers and internal electrodes are alternately laminated to form a laminate, and the internal electrodes are electrically connected to terminal electrodes formed at the ends of the laminate. An electronic component, wherein the terminal electrode is covered with conductive glass.

(2) The electronic component according to (1), wherein the conductive glass is chalcogenide glass.

(3) The conductive material of the terminal electrode is Cu, N
The electronic component according to (1) or (2), comprising at least one of i, Ag, Pd, Pt and Au.

(4) The electronic component according to (1) to (3), wherein the ESR of the multilayer chip capacitor is controlled by controlling the thickness of the coated glass.

(5) The equivalent circuit is CR or (LC) R
The electronic component according to any one of (1) to (4), including a series circuit.

(6) The electronic component according to any one of (1) to (5), wherein the internal electrode contains Ni.

(7) The electronic component according to any one of (1) to (6), wherein the electronic component is plated.

(8) A paste for terminal electrodes, in which a conductive material and conductive glass are dispersed in a vehicle, is applied to a multilayer chip capacitor, baked in a neutral or reducing atmosphere, and the surface of the conductive material is formed of conductive glass. (1) The method for producing an electronic component according to any one of (1) to (7), wherein:

(9) The method for producing an electronic component according to (8), wherein the content of the conductive glass in the terminal electrode paste is 5 to 50% by weight.

(10) The average particle diameter of the conductive material and the conductive glass particles in the terminal electrode paste is 0.1 to 10
(8) The method for manufacturing an electronic component according to (8) or (9), wherein

[0017]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention is directed to a laminated chip having a terminal electrode of a chip capacitor in which dielectric layers and internal electrode layers are alternately laminated, which are covered with conductive glass. The present invention relates to an electronic component for controlling the ESR of a capacitor and a method for manufacturing the same. Thus, by forming a glass layer on the surface of the terminal electrode, a CR or (LC) R series circuit can be easily obtained.

Since the conductive glass of the present invention has semiconductor properties, it is preferable to use chalcogenide glass. The chalcogenide glass is As, S,
Se, Tl, Ge, Cu, Be, Mg, Ca, Zn, C
at least 2 selected from d, Hg, Ga, I and Sb
Consists of more than species. In addition, chalcogenide glass has semiconductor properties, and the ESR of the multilayer chip capacitor can be controlled by its composition and thickness to be formed. The thickness of the glass layer is not particularly limited, but is usually about 0.1 to 20 μm. The thickness of the glass layer can be controlled by the amount of glass added to the terminal electrode.

Although the ESR is not particularly limited,
About 1 to 2000 mΩ, preferably 10 to 100 mΩ.
0 mΩ. By having an ESR in this range, sufficient characteristics can be exhibited as a power supply bypass capacitor of the power supply circuit.

In order to improve solder wettability and solder erosion, it is preferable to form a plating layer on the terminal electrode. At this time, since the surface of the glass layer of the electronic component obtained by the present invention has conductivity, the electroplating method is possible, and the adhesion between the terminal electrode and the plating layer is increased. It is needless to say that a plating layer can be formed by an electroless plating method or a dry plating method, for example, a method using a so-called vacuum thin film forming technique such as sputtering or vapor deposition. Although the plating layer is not particularly limited, Ni and Sn / P are preferably used to improve solder wettability and the like.
It is preferable to provide a plating layer of b alloy. The thickness of the plating layer is not particularly limited, but is usually about 0.1 to 10 μm.

Further, in the electronic component of the present invention, a conductive material and a chalcogenide glass are dispersed in a vehicle on an exposed end face of an internal electrode of a multilayer chip capacitor in which dielectric layers and internal electrode layers are alternately stacked. It is preferable that the paste is formed by applying and forming a paste in a neutral or reducing atmosphere. In the electronic component thus obtained, the chalcogenide glass floats on the surface of the terminal electrode, and finally the terminal electrode is entirely covered with the chalcogenide glass.

Hereinafter, the production method of the present invention will be described in more detail.

<Paste for Dielectric Layer> The dielectric material constituting the dielectric layer is not particularly limited.
Although various dielectric materials may be used, for example, titanium oxide, a titanate-based composite oxide, or a mixture thereof is preferable. As the titanium oxide type, if necessary, Ni
TiO ₂ containing O, CuO, Mn ₃ O ₄ , Al ₂ O ₃ , MgO, SiO _2, etc.
Barium titanate Ba is used as the titanate-based composite oxide.
TiO _{3 and the} like. The atomic ratio of Ba / Ti is 0.9
About 5 to 1.20 is good, the BaTiO _3, MgO,
_{CaO, Mn 3 O 4, Y} 2 O 3, V 2 O 5, ZnO, Zr
O ₂ , Nb ₂ O ₅ , Cr ₂ O ₃ , Fe ₂ O ₃ , P ₂ O ₅ , Na
₂ O, K ₂ O and the like may be contained in a total amount of about 0.001 to 30 wt%. Further, a glass such as (BaCa) SiO ₂ glass may be contained for adjusting the firing temperature and the coefficient of linear expansion.

The method for producing the dielectric material is not particularly limited.
For example, when a titanate-based oxide and barium titanate are used, a method of mixing a subcomponent material with hydrothermally synthesized BaTiO ₃ can be used. BaCO ₃ and Ti
A dry synthesis method in which a mixture of O ₂ and the auxiliary component raw material is calcined to cause a solid phase reaction may be used. Further, a mixture of a precipitate obtained by a coprecipitation method, a sol-gel method, an alkali hydrolysis method, a precipitation mixing method, and the like and a subcomponent material may be calcined to synthesize.
In addition, as an auxiliary component, an oxide or various compounds that become an oxide upon firing, for example, at least one of a carbonate, an oxalate, a nitrate, a hydroxide, an organometallic compound, and the like can be used.

The average particle size of the dielectric material may be determined according to the target average crystal grain size of the dielectric layer.
A powder having an average particle diameter of about 0.3 to 1.0 μm is used.

The dielectric paste is produced by kneading a dielectric material and an organic vehicle.

The organic vehicle is obtained by dissolving a binder in an organic solvent. The binder used for the organic vehicle is not particularly limited, and may be appropriately selected from ordinary various binders such as ethyl cellulose. The organic solvent to be used is not particularly limited, and may be appropriately selected from various organic solvents such as terpineol, butyl carbitol, acetone, and toluene according to a printing method, a sheet method, and a method to be used.

The thickness of one dielectric layer is not particularly limited, but is usually about 5 to 20 μm. The number of stacked dielectric layers is usually about 2 to 300.

<Paste for Internal Electrode> The conductive material of the internal electrode paste is not particularly limited, but may be Ag, Pd, Pt,
It is preferable that it be made of at least one selected from Ni, Cu, and Au. In addition, by using a material having reduction resistance as the dielectric layer constituting material, an inexpensive base metal can be used. Therefore, Ni or Ni alloy is particularly preferable as the conductive material. As the Ni alloy, Mn,
One or more elements selected from Cr, Co, Al, etc. and N
i is preferable, and the Ni content in the alloy is 95 wt%.
It is preferable that it is above. In addition, various trace components such as P may be contained in Ni or Ni alloy in an amount of about 0.1 wt% or less.

The above-mentioned organic vehicles are adjusted by kneading the above-mentioned various conductive metals and alloys, or the above-mentioned various oxides, organometallic compounds, resinates, etc. which become the above-mentioned conductive materials after firing.

The thickness of the internal electrode layer may be appropriately determined according to the application, but is usually preferably about 0.5 to 5 μm.

<Paste for Terminal Electrode> The paste for terminal electrode is composed of a conductive material, a glass frit, and an organic vehicle. The conductive material of the terminal electrode paste is Ag, Au, P
At least one is selected from t, Pd, Cu, and Ni. Preferably, Cu, Ni, or an alloy thereof is used because it is inexpensive, and Cu is more preferable. A sintering aid or a glass frit is added to these conductive materials to ensure adhesion to the chip body. The average particle size of the conductive material is 0.01 to 10 μm. When the particle size is smaller than this, the conductive material particles are strongly agglomerated, and the terminal electrode is easily cracked during application, drying, or firing of the terminal electrode paste. Becomes difficult. The average particle size of the glass frit is 0.01 to 30 μm. If the particle size is smaller than this, cracks of the glass may be caused. If the particle size is larger than this, the dispersion of the glass becomes worse, and the adhesion between the terminal electrode and the element body is reduced.

The conductive material and the glass frit are dispersed in a vehicle to obtain a terminal electrode paste.

The composition of the glass frit is not particularly limited, but any material may be used as long as the terminal electrode can be fired in a neutral or reducing atmosphere, and the glass frit can also function under these atmospheres. For example, one or two or more of glass frit selected from silicate glass, borosilicate glass, and alumina silicate glass are used, and if necessary, CaO, SrO, BaO, MgO, Zn
A mixture of additives such as O, PbO, Na ₂ O, K ₂ O, and MnO ₂ so as to have a predetermined composition ratio may be used.
The content of glass is not particularly limited, but is usually about 0.5 to 15% by weight based on the metal component.

As the organic vehicle, those described above may be used.

<Content of Organic Vehicle> The content of the organic vehicle in each of the above-mentioned pastes is not particularly limited. If the usual content is, for example, about 1 to 5 wt% for the binder and 10 to 50 wt% for the solvent. Good. Further, each paste may contain additives selected from various dispersants, plasticizers, dielectrics, insulators, and the like, as necessary. The total content of these is preferably set to 10 wt% or less.

<Preparation of Green Chip> When a printing method is used, a paste for a dielectric layer and a paste for an internal electrode are printed on a substrate such as PET. These are alternately stacked, thermocompression bonded, cut into a predetermined shape and made into chips,
Peeled from the substrate to form a green chip.

When the sheet method is used, a green sheet is formed using a dielectric layer paste, an internal electrode layer paste is printed on the green sheet, and these are alternately and repeatedly laminated to form a predetermined shape. Into green chips.

<Binder Removal Step> The conditions for the binder removal treatment performed before firing may be ordinary conditions. However, when a base metal such as Ni or a Ni alloy is used as the conductive material of the internal electrode layer, the following conditions are particularly preferred. It is preferable to carry out under conditions.

Heating rate: 5 to 300 ° C./hour, especially 10
１００100 ° C./hour Holding temperature: 200 to 400 ° C., especially 250 to 300 ° C. Temperature holding time: 0.5 to 24 hours, especially 5 to 20 hours Atmosphere: in air <Firing step> It may be appropriately selected according to the type of the conductive material of the paste for the internal electrode. However, when a base metal such as Ni or a Ni alloy is used as the conductive material, the firing atmosphere is mainly composed of N ₂ , and H ₂ is 1 to ₂ . 1
A mixture of 0% and H ₂ O gas obtained by a steam pressure at 10 to 35 ° C. is preferable. Oxygen partial pressure is 1
The pressure is preferably from 0 ^-8 to 10 ^-12 atm. If the oxygen partial pressure is less than the above range, the conductive material of the internal electrode may be abnormally sintered and may be interrupted. If the oxygen partial pressure exceeds the above range, the internal electrodes will be oxidized.

The holding temperature during firing is 1100 to 1400
° C, particularly preferably 1200 to 1300 ° C.
When the holding temperature is lower than the above range, the densification is insufficient, and when the holding temperature is higher than the above range, the internal electrode is easily broken. Further, the temperature holding time during firing is 0.5 to 8 hours,
Particularly, 1 to 3 hours is preferable.

<Annealing Step> When firing in a reducing atmosphere, it is preferable to anneal the multilayer ceramic capacitor. Annealing is a process for reoxidizing the dielectric layer, which can significantly increase the accelerated life of the insulation resistance.

The oxygen partial pressure of the annealing atmosphere is preferably 10 ⁻⁶ atm or more, particularly preferably 10 ⁻⁶ to 10 ⁻⁸ atm.
When the oxygen partial pressure is less than the above range, it is difficult to reoxidize the dielectric layer, and when the oxygen partial pressure exceeds the above range, the internal electrode is oxidized.

The holding temperature at the time of annealing is preferably 1100 ° C. or less, particularly preferably 500 to 1000 ° C. When the holding temperature is less than the above range, the oxidation of the dielectric layer becomes insufficient, and the accelerated life of the insulation resistance tends to be shortened,
If the ratio exceeds the above range, the internal electrodes are oxidized, and not only the capacity is reduced, but also reacts with the dielectric base material, and the accelerated life is shortened. Note that the annealing step may be configured only by raising and lowering the temperature. In this case, it is not necessary to take a temperature holding time, and the holding temperature is synonymous with the maximum temperature. Further, the temperature holding time is preferably 0 to 20 hours, particularly preferably 2 to 10 hours.
It is preferable to use a humidified N ₂ gas as the atmosphere gas.

In each of the above-described steps of the binder removal treatment, baking, and annealing, for example, a wetter may be used to humidify N ₂ , H ₂ , O, or a mixed gas. The water temperature in this case is preferably about 5 to 75C.

The binder removal step, the firing step, and the annealing step may be performed continuously or independently.

When these steps are performed continuously, the atmosphere may be changed without cooling after the binder removal treatment, and the steps may be performed independently. When performing these continuously, after debinding,
It is preferable that the atmosphere is changed without cooling, then the temperature is raised to the holding temperature for firing to perform firing, then the cooling is performed, and the annealing is performed by changing the atmosphere when the temperature reaches the holding temperature in the annealing step.

In the case where these steps are performed independently, in the binder removal treatment step, the temperature is raised to a predetermined holding temperature, held for a predetermined time, and then lowered to room temperature. At that time, the debinding atmosphere is the same as in the case where the debinding is performed continuously. Further, in the annealing step, the temperature is raised to a predetermined holding temperature, held for a predetermined time, and then lowered to room temperature. The annealing atmosphere at that time is the same as in the case of performing the annealing continuously. Also, the binder removal step and the firing step are performed continuously,
Only the annealing step may be performed independently, or only the binder removal step may be performed independently, and the firing step and the annealing step may be performed continuously.

<Step of Applying Terminal Electrode Layer Paste> The terminal electrode paste prepared as described above is applied to a sintered chip. The application step is not particularly limited, but may be a dip method or the like. The amount of the terminal electrode paste applied is not particularly limited, and may be appropriately adjusted depending on the size of the sintered chip to be applied, but is usually about 5 to 100 μm. After applying the terminal electrode paste, it is dried. Drying is preferably performed at about 60 to 150 ° C. for about 10 minutes to 1 hour.

<Baking of Terminal Electrode Layer> After the terminal electrode layer paste is applied and dried as described above, baking (firing) to the chip element is performed. Baking conditions, for example, a neutral atmosphere of N ₂ or is preferably set to 0 to 1 hour or so at 600 to 1000 ° C. at a reducing atmosphere such as a mixed gas of N ₂ and H _2.

<Formation of Conductive Glass Layer> A conductive glass paste is applied on the terminal electrode after baking by dipping or the like, and then fired to form a glass layer on the surface of the terminal electrode. The thickness of the glass layer is not particularly limited, but is usually about 0.1 to 20 μm. The conductive glass paste may be obtained by dispersing the conductive glass powder in the organic vehicle as described above. The content of the conductive glass powder in the paste is not particularly limited, but is usually 30 to 90 watts.
It is about t%.

Alternatively, a glass layer may be formed by the following method.

A paste obtained by kneading a conductive material, conductive glass and an organic vehicle is prepared as a terminal electrode paste. If necessary, glass frit may be added.
The conductive material, the glass frit, and the organic vehicle may be those described above. This paste for terminal electrodes is applied and formed on the sintered chip, and the terminal electrode layer is baked (fired) by the method described above. By this method, the conductive glass floats on the surface of the terminal electrode during firing, and eventually covers the entire surface of the terminal electrode. The thickness of the glass layer is controlled by the amount of conductive glass in the terminal electrode paste. The content of the conductive glass is preferably from 5 to 50% by weight, and more preferably from 10 to 40% by weight. If it is less than the above range, the terminal electrode surface cannot be completely covered, and if it exceeds the above range, the design capacity as a capacitor cannot be obtained. The average particle diameter of the conductive material and the conductive glass particles in the terminal electrode paste is usually 0.1 to 1.
It is about 0 μm.

Also in this case, the thicknesses of the terminal electrode and the glass layer are as described above.

The glass layer thus formed is conductive and has a relatively high resistance, and thus functions as a resistance layer.

<Plating layer> If necessary, Ni, Sn,
A metal plating layer of solder or the like, in particular, Ni or Sn can be provided. Providing the metal plating layer improves solder wettability and solder erosion. The metal plating layer may be provided as one layer or two or more layers.
Those formed in layers in the order of i and Sn are preferred.

By the above-described method, a CR composite electronic component to which a preferable range of ESR is added can be obtained.

[0058]

EXAMPLES Next, the present invention will be described more specifically with reference to examples.

Example 1 Ba was used as a main material of the dielectric layer.
CO ₃ (average particle size: 2.0 μm) and TiO ₂ (average particle size: 2.0 μm) were prepared. The atomic ratio of Ba / Ti is 1.00. In addition to this, 0.2 wt% of MnCO ₃ as an additive to BaTiO ₃ and MgC
O ₃ and 0.2 wt%, 2.1 wt% of Y ₂ O _3, (Bac
a) 2.2 wt% of SiO ₃ was prepared. Each raw material powder was mixed with an underwater ball mill and dried. The obtained powder mixture is 1
Calcination was performed at 250 ° C. for 2 hours. This calcined powder was pulverized with an underwater ball mill and dried. To the obtained calcined powder, an acrylic resin as an organic binder and methylene chloride and acetone as an organic solvent were added and mixed to obtain a dielectric slurry. A dielectric green sheet was obtained using the obtained dielectric slurry and a doctor blade method.

As an internal electrode material, a base metal Ni powder (average particle size: 0.8 μm) was prepared, and ethyl cellulose as an organic binder and terpineol as an organic solvent were added and kneaded using a three-roll mill. And

As a terminal electrode material, chalcogenide glass As-S (As: 50 wt%, S: 50 w) was used for the base metal Cu powder (average particle size: 3.0 μm) and Cu powder.
t%) is 2, 4, 5, 10, 20, 30, 40, 50,
55 wt% was added, and an acrylic resin as an organic binder and terpineol as an organic solvent were added thereto, and kneaded using a three-roll mill to obtain a terminal electrode paste.

In order to obtain a predetermined thickness, several dielectric green sheets are laminated, an internal electrode paste is printed thereon by a screen printing method, and a green sheet is laminated thereon, and thus the internal electrodes are printed. Sheets and green sheets are alternately stacked, and finally, a predetermined number of green sheets are stacked and thermocompression bonded, and a predetermined chip shape is fired to a height of 3.2 × 1.6 × 1.0 mm after baking. To obtain a green chip.

The obtained green chips were humidified with N ₂ +
In a H ₂ (N ₂ 3%) reducing atmosphere, baking is carried out at 1300 ° C. for 3 hours, and further kept at 1000 ° C. for 2 hours in a humidified N ₂ oxygen partial pressure of 10 ⁻⁷ atm. I got a body.

The above-mentioned terminal electrode paste was applied to both ends of the obtained sintered body, dried, and then dried in an N ₂ -H ₂ atmosphere at 65 ° C.
The glass was held at 0 ° C. for 10 minutes and fired to form a glass layer on the terminal electrode surface.

On the surface of the glass layer, a Ni layer, Sn / Pb
An alloy layer was sequentially formed by an electrolytic plating method to obtain an electronic component.
The capacitance of the obtained sample was 1 μF. Table 1 shows the results obtained by measuring the thickness and ESR of these electronic components. The thickness is determined by polishing 10 samples arbitrarily.
It was measured by EM observation, and their average value was used. For the ESR, an average value of 40 samples was used.

[0066]

[Table 1]

As is clear from the table, it is found that the thickness of the glass layer is controlled by adjusting the content of the chalcogenide glass in the terminal electrode, and the ESR is also controlled. Further, it is needless to say that by adjusting the composition of the chalcogenide glass, glass layers having different resistivity can be formed.

These electronic parts with the added ESR are DC
-When used as a bypass capacitor of a DC converter and operated while changing the switching frequency from 100 kHz to 40 MHz, it was confirmed that the operation was normal without causing a voltage fluctuation phenomenon of the input voltage due to oscillation or the like.

[0069]

As described above, according to the present invention, an electronic component whose manufacturing process is simple, its production cost is low, and its ESR control is easy, and its manufacturing method can be realized.

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Yasunori Tokuoka 1-13-1 Nihonbashi, Chuo-ku, Tokyo Inside TDK Corporation

Claims (10)

[Claims] An electronic device in which dielectric layers and internal electrodes are alternately laminated to form a laminate, and wherein the internal electrodes are electrically connected to terminal electrodes formed at ends of the laminate. An electronic component, wherein the terminal electrode is covered with conductive glass. 2. The electronic component according to claim 1, wherein said conductive glass is chalcogenide glass. 3. The conductive material of said terminal electrode is Cu, Ni, A
3. The electronic component according to claim 1, comprising at least one of g, Pd, Pt, and Au. 4. The electronic component according to claim 1, wherein the ESR of the multilayer chip capacitor is controlled by controlling the thickness of the coated glass. 5. The electronic component according to claim 1, wherein the equivalent circuit includes a CR or (LC) R series circuit. 6. The electronic component according to claim 1, wherein the internal electrode contains Ni. 7. The electronic component according to claim 1, wherein a plating process is performed. 8. A terminal electrode paste in which a conductive material and a conductive glass are dispersed in a vehicle, applied to a multilayer chip capacitor, baked in a neutral or reducing atmosphere, and the conductive material surface is made of a conductive glass. The method of manufacturing an electronic component according to claim 1, wherein the electronic component is coated. 9. The method according to claim 8, wherein the content of the conductive glass in the terminal electrode paste is 5 to 50% by weight. 10. The method for manufacturing an electronic component according to claim 8, wherein the conductive material and the conductive glass particles in the terminal electrode paste have an average particle size of 0.1 to 10 μm.