JPH11283866A - Electronic component and manufacture therefor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To simply obtain a resistance function by forming a resistance composed of a conductive layer containing conductive particles and a hardening type resin. SOLUTION: Conductive particles and a hardening type resin are mixed, a diluent is added as needed and a resistance paste is manufactured by kneading them. The resistance paste obtained in this way is formed in a prescribed shape such as the terminal electrode parts, etc., of a circuit board and a chip component and is hardened by a hardening method that matches with the resin type. As the hardening type resin, thermosetting resin is used. When the electronic component is a stacked type chip component, the resistance paste is applied on the exposed edge plane of the inner electrode of the chip component, and the paste is hardened to provide a CR composite electronic component having a resistance function. In the case of providing the terminal electrode of the electronic component with the resistance, the terminal electrode is composed of a double-layer structure so as to have sure conduction with the inner electrode.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electronic component having a resistor composed of a conductive layer containing conductive particles and a curable resin.

[0002]

2. Description of the Related Art Conventionally, ruthenium oxide, tin oxide, tantalum nitride and the like have been used as resistors in circuit wiring boards and the like. This is a mixture of these conductive particles, glass and binder to make a paste,
A method has been adopted in which the substrate is formed by printing or the like on a shape and is baked at a high temperature of 600 ° C. or higher. However, the resistance value of these materials tends to change depending on the baking temperature, and the variation in the resistance value is particularly large in the case of baking requiring atmosphere control. Also, due to the large amount of glass, if baking to form another part is performed again, the glass diffuses into the substrate due to this effect,
The resistance value also fluctuates greatly. In addition, baking emits a large amount of heat energy, which is disadvantageous in terms of resources and costs.

[0003] Under such circumstances, products made of a conductive resin or a conductive adhesive are on the market. However, since these are mainly used as substitutes for terminal electrodes or substitutes for solder, they are intended to have high conductivity, and their functions as resistors are not considered.

[0004] Therefore, at present, there is no other method for producing a component having a resistance function than the above-described printing method.

[0005] In addition, switching power supplies and DC-DC converters are used as power supplies in many recent electronic devices. Capacitors used for these power supplies include power supply bypass capacitors. For the power supply bypass capacitor, a low-capacity multilayer ceramic capacitor and a high-capacity electrolytic capacitor such as aluminum or tantalum have been used according to the power supply capacity, switching frequency, and circuit parameters such as a smoothing coil used in combination. Was. By the way, in recent multilayer ceramic capacitors, the capacitance of multilayer ceramic capacitors has become equivalent to that of electrolytic capacitors with the progress of thinning of dielectrics and internal conductors and development of lamination technology. Attempts have been made to replace them with capacitors. However, when the multilayer ceramic capacitor is replaced with an electrolytic capacitor, the impedance of the multilayer ceramic capacitor in the operating frequency band is too low, that is, the equivalent series resistance (ESR) is too low, so that the step voltage of the input voltage of the three-terminal regulation changes. As a result, the waveform of the output power is disturbed. When an electrolytic capacitor is used, although the impedance is larger than that of the multilayer ceramic capacitor, heat is easily generated because the impedance is too large, and the smoothness of the power supply line is also deteriorated.

Therefore, there has been proposed an electronic component in which the equivalent series resistance (ESR) of a conventional multilayer ceramic capacitor is increased. For example, in Japanese Patent No. 2578264, a metal oxide film is formed on the surface of an external electrode and this is used as a resistor to increase the ESR, and the resistance value is controlled by the oxide film thickness. However, in this method, it is very difficult to control the oxidation of the terminal electrode, and if the degree of oxidation is a little too large, the internal electrode is also oxidized and cannot function as a capacitor. Even if only the terminal electrodes can be oxidized, the plating is formed by electroless plating when plating because the terminal electrodes are oxidized. It is necessary to cover the element body with a resin or the like so as not to be plated, which not only complicates the process, but also significantly reduces the adhesiveness between the oxide and the Ni film. There is a drawback that necessary and sufficient mechanical strength as a part cannot be obtained.

Further, as described in, for example, JP-A-59-225509, a resistor paste such as ruthenium oxide is laminated on a multilayer ceramic capacitor, and this is simultaneously fired to form a resistor. I have. However, in this case, when the terminal electrode is provided as it is, the equivalent circuit is C /
It becomes a parallel circuit of R or (LC) / R, and a serial circuit cannot be obtained. Also, to obtain a series circuit,
The shape of the terminal electrode is complicated, and the manufacturing process is also complicated. Further, the resistor usually contains glass, and this glass is easily dissolved in the plating solution. Therefore, when plating, it is necessary to coat the resistor with a resin or the like so as not to expose the resistor to the plating solution, and the number of steps is increased.

[0008]

SUMMARY OF THE INVENTION The present invention has been made under such circumstances, and an object of the present invention is to provide a resistor having a resistance function by forming a resistor at a low temperature using a curable resin. To easily manufacture electronic components.

[0009]

This and other objects are achieved by the present invention which is defined below as (1) to (7).

(1) An electronic component having a resistor composed of a conductive layer containing conductive particles and a curable resin.

(2) The electronic component according to (1), wherein the conductive particles are at least one of a metal and a semiconductor.

(3) The electronic component according to (1) or (2), wherein the curable resin is a thermosetting resin.

(4) The electronic component is a chip capacitor, and at least one of the terminal electrodes has a resistor made of a conductive layer containing conductive particles and a curable resin (1) to (3). Electronic components.

(5) The electronic component is a chip capacitor, wherein at least one of the terminal electrodes comprises two layers,
When the first terminal electrode layer and the second terminal electrode layer are formed from the side in contact with the internal electrode, the electronic component according to (4), wherein the second electrode layer is a resistor made of a conductive layer containing conductive particles and a curable resin. .

(6) The equivalent circuit is CR or (LC) R
The electronic component according to (4) or (5) having a series circuit.

(7) The method for producing an electronic component according to (1) to (6), wherein a paste containing conductive particles and a curable resin is applied and cured to form a resistor.

[0017]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The details of the present invention will be described below.

The present invention relates to an electronic component having a resistance function. The electronic component of the present invention has a resistor composed of a conductive layer containing conductive particles and a curable resin.

The conductive particles serving as the resistance component need not be particularly limited, and may be a substance exhibiting conductivity, for example, metal,
Semiconductors (oxides, nitrides, etc.); Specifically, Ag, Cu, Au, Ni, Mn, Si, Ru ₂ O,
It can be used _{SnO, ZnO, Cu 2 O,} CuO, NiO, TaN, or the like. A desired resistance value can be easily obtained by changing the resistivity of the conductive particles and the mixing ratio of the conductive particles and the curable resin.

As the curable resin used in the present invention, any of a thermosetting resin, an ultraviolet curable resin, and the like may be used. However,
From the viewpoint of cost and mass productivity, a thermosetting resin is preferable. In this case, for example, an epoxy resin, an acrylic resin, a melamine resin, a phenol resin, a resol type phenol resin,
Unsaturated polyester resin, fluororesin, silicone resin and the like are used.

The method for forming the resistor is as follows. The conductive particles and the curable resin are mixed, a diluent is added as necessary, and these are kneaded to produce a resistor paste. The diluent is not particularly limited, and a diluent suitable for the above resin may be used. The resistor paste thus obtained is formed into a predetermined shape on a terminal electrode portion of a circuit board or a chip component by a screen printing method, a transfer method, a dipping method, etc., and cured by a curing method according to the type of resin. By doing so, a resistor can be formed. When a thermosetting resin is used as the curable resin, the conditions of thermosetting differ depending on the resin, but are usually 10 to 100 ° C. to 250 ° C.
It takes about 60 minutes.

The resistance value of the resistor used in the present invention can be arbitrarily set by the amount of the conductive particles in the resistor paste and the amount of the conductive particles having different resistance values.

Next, an example in which the resistor used in the present invention is applied to an electronic component will be described.

When the electronic component is a multilayer chip component,
By applying the resistor paste to the exposed end surfaces of the internal electrodes of the chip component and curing the paste, a CR composite electronic component having a resistance function can be obtained. However, when the resistor is provided on the terminal electrode of the electronic component as described above, it is preferable that the terminal electrode has a two-layer structure in order to further ensure conduction with the internal electrode. When the first terminal electrode layer and the second terminal electrode layer are formed from the side connected to the internal electrode,
Forming a first terminal electrode layer by applying and baking a terminal electrode paste used for a conventional chip component;
A second terminal electrode layer is formed thereon. Here, the resistor paste is applied as a second terminal electrode layer and cured under predetermined conditions to form a second terminal electrode layer. In this way, an electronic component having a terminal function of a resistor is manufactured. Specifically, CR composite electronic components, (L
C) R composite electronic components, chip resistors, etc. are manufactured.

Normally, electronic components are mounted on a board or the like by soldering terminal electrodes. Therefore, in order to obtain solder adhesiveness, the surface of the terminal electrode is plated. In the case of the present invention, plating is formed on the resistor, but the plating formation method is not particularly limited. Since a conventionally known electrolytic plating method can be used, the adhesion between the terminal electrode and the plating layer is increased. Needless to say, a plating film can also be formed by a method using an electroless plating method or a dry plating method (a so-called vacuum thin film forming technique such as sputtering or vapor deposition). The plating layer is not particularly limited,
Usually, after forming a Ni layer, Sn or Sn-Pb
Although an alloy layer is formed, it is more preferable to form a Sn layer on a Ni layer.

By including Cu, Ni, Ag, Sn, Zn, In, Bi, Pb, etc. as conductive particles in the resistor paste, it is possible to directly solder the resistor without plating. It becomes possible.

The resistor paste used in the present invention is as follows:
It can be used as a substitute for solder for securing electrical connection of the resistor. For example, the paste of the present invention is formed in place of solder on various terminal electrode portions, and by curing the paste, mechanical adhesion and electrical connection with a substrate, wiring, or other components can be ensured, and at the same time, a resistance function is obtained. You can have.

As described above, according to the present invention, since the resistor is formed by using the curable resin, it is not necessary to burn the resistor at a high temperature, and it is possible to easily manufacture an electronic component having a resistance function. it can.

Next, as a method for manufacturing an electronic component of the present invention,
Here, a CR composite electronic component having a multilayer chip capacitor provided with a resistance function will be described as an example.

In this CR composite electronic component, a green chip is produced and sintered by a normal printing method or sheet method using a paste, and at least one of the terminal electrodes of the sintered chip has conductive particles and hardened particles. It is manufactured by forming a resistor made of a conductive layer containing a mold resin.

[Dielectric Layer Paste] The dielectric layer paste is produced by kneading a dielectric material and an organic vehicle.

As the dielectric material, a powder according to the composition of the dielectric layer is used. The dielectric material is not particularly limited, and various dielectric materials may be used.
Titanium oxide, titanate-based composite oxides, and mixtures thereof are preferred. As the titanium oxide, NiO, CuO, Mn ₃ O ₄ , Al ₂ O ₃ , MgO, S
T with a total of about 0.001 to 30 wt% of iO ₂ etc.
Barium titanate BaTiO ₃ or the like is used as the TiO ₂ -based and titanate-based composite oxide. The atomic ratio of Ba / Ti may be about 0.95 to 1.20, the _{BaTiO 3, MgO, CaO, Mn} 3 O 4, Y 2 O 3, V 2 O 5, Zn
O, ZrO ₂ , Nb ₂ O ₅ , Cr ₂ O ₃ , Fe ₂ O ₃ , P
₂ O ₅ , Na ₂ O, K ₂ O, etc. total 0.001 to 30 wt%
It may be added to some extent. Further, glass such as (BaCa) SiO ₂ glass may be added for adjusting the firing temperature and the coefficient of linear expansion.

The method for producing the dielectric material is not particularly limited.
For example, when barium titanate is used, hydrothermally synthesized B
It is possible to use a method of mixing a sub-component raw material with aTiO ₃ . Alternatively, a dry synthesis method in which a mixture of BaCO ₃ , TiO _2, and auxiliary component raw materials is calcined to cause a solid phase reaction may be used. Further, a mixture of a precipitate obtained by a coprecipitation method, a sol-gel method, an alkali hydrolysis method, a precipitation mixing method, and the like and a subcomponent material may be calcined to synthesize. In addition, as an auxiliary component, an oxide or various compounds that become an oxide upon firing, for example,
At least one of a carbonate, an oxalate, a nitrate, a hydroxide, an organometallic compound and the like can be used.

The average particle size of the dielectric material may be determined according to the target average crystal grain size of the dielectric layer.
A powder having an average particle diameter of about 0.3 to 1.0 μm is used.

The dielectric paste is produced by kneading a dielectric material and an organic vehicle.

The organic vehicle is obtained by dissolving a binder in an organic solvent. The binder used for the organic vehicle is not particularly limited, and may be appropriately selected from ordinary various binders such as ethyl cellulose. The organic solvent to be used is not particularly limited, and may be appropriately selected from various organic solvents such as terpineol, butyl carbitol, acetone, and toluene according to a printing method, a sheet method, and a method to be used.

The thickness of one dielectric layer is not particularly limited, but is usually about 5 to 20 μm. The number of stacked dielectric layers is usually about 2 to 300.

[Paste for Internal Electrode] The conductive material of the paste for internal electrode is not particularly limited, but is preferably made of at least one selected from Ni and Cu. In addition, by using a material having reduction resistance as the dielectric layer constituting material, an inexpensive base metal can be used. Therefore, Ni or a Ni alloy is particularly preferable as the conductive material. As the Ni alloy, an alloy of one or more elements selected from Mn, Cr, Co, Al, and the like and Ni is preferable,
The Ni content in the alloy is preferably at least 95 wt%. In addition, various trace components such as P may be contained in Ni or Ni alloy in an amount of about 0.1 wt% or less.

The internal electrode paste is prepared by kneading the above-mentioned various conductive metals and alloys, or the above-mentioned various conductive oxides, organometallic compounds, resinates and the like and the above-mentioned organic vehicle after firing.

The thickness of the internal electrode layer may be appropriately determined according to the application, but is preferably about 0.5 to 5 μm.

[Paste for First Terminal Electrode Layer] When a resistor is provided on the terminal electrode of the multilayer chip capacitor, it is preferable that the terminal electrode has a two-layer structure in order to further ensure conduction with the internal electrodes. First from the side connected to the internal electrode
A terminal electrode layer and a second terminal electrode layer are formed, and a first terminal electrode layer is formed by applying and baking the following terminal electrode paste, and a second terminal electrode layer is formed thereon.

The terminal electrode paste contains a conductive material, a glass frit, and an organic vehicle. The conductive material is Ag, A
It is selected from at least one of u, Pt, Pd, Cu, and Ni, but is preferably Cu, Ni, or an alloy thereof, and particularly preferably Cu, because of its low cost. A sintering aid or a glass frit is added to these conductive materials to ensure adhesion to the chip body.

The average particle size of the conductive material is 0.01 to 10 μm. When the particle size is smaller than this, the conductive material particles are strongly agglomerated, and the terminal electrode is easily cracked during application, drying, or firing of the terminal electrode paste. Becomes difficult. The average particle size of the glass frit is 0.01 to 3
0 μm. If the particle size is smaller than this, the sintering of the conductive material becomes non-uniform, causing cracks in the terminal electrode. If the particle size is larger than this, the dispersion of the glass deteriorates, and the adhesion between the terminal electrode and the element body becomes poor. Decrease.

The conductive material and the glass frit are dispersed in a vehicle to obtain a terminal electrode paste.

The glass frit composition is not particularly limited. However, when Cu is used for the conductive material, it is neutral,
Alternatively, since the first terminal electrode layer needs to be fired in a reducing atmosphere, the first terminal electrode layer needs to function as glass even in such an atmosphere. Such as, for example,
Silicate glass (SiO ₂ : 20-80 wt%, Na ₂ O:
80~20wt%), borosilicate glass (B ₂ O _3: 5~
50 wt%, SiO ₂ : 5 to 70 wt%, PbO: 0.
_{1~10wt%, K 2 O: 1~15wt} %), alumina silicate glass _{(Al 2 O 3: 1~30wt%} , SiO 2: 1
_{0~60wt%, Na 2 O: 5~15wt} %, CaO:
1~20wt%, B ₂ O _3: one or may be used two or more glass frits selected from 5-30 wt%). If necessary, CaO: 0.01 to 50 wt.
%, SrO: 0.01 to 70 wt%, BaO: 0.01
-50 wt%, MgO: 0.01-5 wt%, ZnO:
0.01 to 70 wt%, PbO: 0.01 to 5 wt%,
Na ₂ O: 0.01 to 10 wt%, K ₂ O: 0.01 to 1
Additives such as 0 wt% and MnO ₂ : 0.01 to ₂₀ wt% may be mixed and used so as to have a predetermined composition ratio. The content of glass with respect to the metal component is not particularly limited, but is usually 0.5 to 15 wt.
%.

As the organic vehicle, those described above may be used.

[Content of Organic Vehicle] The content of the organic vehicle in each of the above-mentioned pastes is not particularly limited. If the usual content, for example, about 1 to 5 wt% of the binder and 10 to 50 wt% of the solvent, Good. Further, each paste may contain additives selected from various dispersants, plasticizers, dielectrics, insulators, and the like, as necessary. The total content of these is preferably set to 10 wt% or less.

[Paste for Second Electrode Layer (Resistor Paste)] As the second electrode layer paste, a resistor paste is used. The resistor paste is composed of conductive particles and a curable resin. The conductive paste and the curable resin and, if necessary, a diluent are added thereto and kneaded to obtain a resistor paste. As the conductive particles,
Metals and semiconductors (oxides, nitrides, etc.) are used. Although the conductive particles are not particularly limited, for example, Ag, Cu, A
u, Ni, Mn, Si, Ru ₂ O, SnO, ZnO, C
u ₂ O, CuO, NiO, TaN or the like can be used. By changing the resistivity of the conductive particles and the mixing ratio of the conductive particles and the resin, a desired resistance value can be easily obtained. Further, as the conductive particles, Cu, Ni, Ag, S
By using n, Zn, In, Bi, Pb, or the like, it becomes possible to directly solder the resistor without plating.

The resin is made of a curable resin. As the curing method, any of a thermosetting type and an ultraviolet curing type may be used, but a thermosetting type is preferable from the viewpoint of cost and mass productivity, and in this case, the following resins are exemplified. For example, an epoxy resin, an acrylic resin, a melamine resin, a phenol resin, a resol type phenol resin, an unsaturated polyester resin, a fluororesin, a silicone resin and the like can be mentioned.

[Preparation of Green Chip] When a printing method is used, a paste for a dielectric layer and a paste for an internal electrode are printed on a substrate such as PET. At this time, the layers are laminated such that one of the ends of the internal electrode paste is alternately exposed to the outside from the end of the dielectric base. After that, it is thermocompressed, cut into a predetermined shape to form a chip, and then separated from the substrate to form a green chip.

When the sheet method is used, a green sheet is formed using a dielectric layer paste, an internal electrode layer paste is printed on the green sheet, and these are alternately and repeatedly laminated to form a predetermined shape. Into green chips.

[Binder Removal Step] The conditions for the binder removal treatment performed before firing may be ordinary conditions. However, when a base metal such as Ni or a Ni alloy is used as the conductive material of the internal electrode layer, the following conditions are particularly preferable. It is preferable to carry out under conditions.

Heating rate: 5 to 300 ° C./hour, especially 10
-100 ° C / hour Holding temperature: 200-400 ° C, especially 250-300 ° C Temperature holding time: 0.5-24 hours, especially 5-20 hours Atmosphere: in air [Firing step] The atmosphere during firing of the green chips is as follows: It may be appropriately selected according to the type of the conductive material of the paste for the internal electrode. However, when a base metal such as Ni or a Ni alloy is used as the conductive material, the firing atmosphere is mainly composed of N ₂ , and H ₂ is 1 to ₂ . 1
A mixture of 0% and H ₂ O gas obtained by steam pressure at 10 to 35 ° C. is preferable. Oxygen partial pressure is 10
^The pressure is preferably set to ^-8 to ^10-12 atm. If the oxygen partial pressure is less than the above range, the conductive material of the internal electrode may be abnormally sintered and may be interrupted. If the oxygen partial pressure exceeds the above range, the internal electrodes tend to be oxidized.

The holding temperature during firing is 1100 to 1400
° C, particularly preferably 1200 to 1300 ° C.
When the holding temperature is lower than the above range, the densification is insufficient, and when the holding temperature is higher than the above range, the internal electrode is easily broken. Further, the temperature holding time during firing is 0.5 to 8 hours,
Particularly, 1 to 3 hours is preferable.

[Annealing Step] When firing in a reducing atmosphere, it is preferable to anneal the multilayer chip capacitor. Annealing is a process for reoxidizing the dielectric layer, which can significantly increase the accelerated life of the insulation resistance.

The oxygen partial pressure of the annealing atmosphere is preferably 10 ^-6 atm or more, particularly preferably 10 ^-6 to 10 ^-8 atm.
When the oxygen partial pressure is less than the above range, it is difficult to reoxidize the dielectric layer, and when the oxygen partial pressure exceeds the above range, the internal electrode is oxidized.

The holding temperature at the time of annealing is preferably 1100 ° C. or less, particularly preferably 500 to 1000 ° C. When the holding temperature is less than the above range, the oxidation of the dielectric layer becomes insufficient, and the accelerated life of the insulation resistance tends to be shortened,
If the ratio exceeds the above range, the internal electrodes are oxidized, and not only the capacity is reduced, but also reacts with the dielectric base material, and the accelerated life is shortened. Note that the annealing step may be configured only by raising and lowering the temperature. In this case, it is not necessary to take a temperature holding time, and the holding temperature is synonymous with the maximum temperature. Further, the temperature holding time is preferably 0 to 20 hours, particularly preferably 2 to 10 hours.
It is preferable to use N ₂ and humidified H ₂ gas as the atmosphere gas.

In each of the above-described steps of the binder removal treatment, firing and annealing, for example, a wetter or the like may be used to humidify N ₂ , H ₂ , a mixed gas and the like. The water temperature in this case is preferably about 5 to 75C.

The binder removal step, the firing step and the annealing step may be performed continuously or independently.

In the case where these steps are performed continuously, the atmosphere may be changed without cooling after the binder removal treatment, and the steps may be performed independently. When performing these continuously, after debinding,
It is preferable that the atmosphere is changed without cooling, then the temperature is raised to the holding temperature for firing to perform firing, then the cooling is performed, and the annealing is performed by changing the atmosphere when the temperature reaches the holding temperature in the annealing step.

In the case where these steps are performed independently, in the binder removal treatment step, the temperature is raised to a predetermined holding temperature, held for a predetermined time, and then lowered to room temperature. At that time, the debinding atmosphere is the same as in the case where the debinding is performed continuously. Further, in the annealing step, the temperature is raised to a predetermined holding temperature, held for a predetermined time, and then lowered to room temperature. The annealing atmosphere at that time is the same as in the case of performing the annealing continuously. Also, the binder removal step and the firing step are performed continuously,
Only the annealing step may be performed independently, or only the binder removal step may be performed independently, and the firing step and the annealing step may be performed continuously.

[Formation of First Terminal Electrode Layer] A terminal electrode paste is applied to a sintered chip. The application step is not particularly limited, but may be a dip method or the like. The amount of the terminal electrode paste applied is not particularly limited, and may be appropriately adjusted depending on the size of the sintered chip to be applied, but is usually about 5 to 100 μm. After applying the terminal electrode paste, it is dried. 6 for drying
It is preferable to carry out at about 0 to 150 ° C. for about 10 minutes to 1 hour.

After the terminal electrode paste is applied and dried as described above, baking (firing) on the chip element is performed. Baking conditions, for example, a neutral atmosphere of N ₂ or in a reducing atmosphere such as a mixed gas of N ₂ and H ₂ 600
It is preferred to carry out by maintaining the temperature at about 1000 ° C. for about 0 to 1 hour.

[Formation of Second Terminal Electrode Layer] A resistor paste is formed on at least one of the first terminal electrode layers by dipping or the like in a predetermined shape so as to completely cover the first terminal electrode layer. , And is cured by a curing method suitable for the type of resin. When a thermosetting resin is used as the curable resin, the thermosetting is usually performed at 100 to 250 ° C for 10 to 6
Perform for about 0 minutes.

[Plating Layer] If necessary, a Ni layer and a Sn layer or a Sn—Pb alloy layer are formed on the surface of the terminal electrode by a plating method. The thickness of the plating layer is not particularly limited,
Usually, it is about 0.1 to 10 μm.

With such a configuration, it is possible to obtain a CR composite electronic component to which ESR is added. The ESR is not particularly limited, but is about 1 to 2000 mΩ, preferably 10 to 1000 mΩ. By having the ESR in this range, sufficient performance can be exhibited as a power supply bypass capacitor of the power supply circuit.

Although the method of manufacturing the CR composite electronic component has been described by way of a specific example, the resistor paste used in the present invention may be a resistor for a circuit board, a chip resistor, (LC)
It goes without saying that the present invention can be applied to R composite electronic components and the like.

[0068]

EXAMPLES Next, the present invention will be described more specifically with reference to examples.

BaCO ₃ (average particle size: 2.0 μm) and TiO ₂ (average particle size: 2.0
μm) was prepared. The atomic ratio of Ba / Ti is 1.00. In addition to this, 0.2 wt% of MnCO ₃ and 0.2 wt% of MgCO ₃ are added to BaTiO ₃ as additives.
t%, 2.1 wt% of Y ₂ O _3, was prepared 2.2 wt% of (BaCa) SiO _3. Each raw material powder was mixed with an underwater ball mill and dried. The obtained mixed powder was calcined at 1250 ° C. for 2 hours. This calcined powder was pulverized with an underwater ball mill and dried. To the obtained calcined powder, an acrylic resin as an organic binder and methylene chloride and acetone as an organic solvent were added and mixed to obtain a dielectric slurry. The obtained dielectric slurry was used as a dielectric green sheet using a doctor blade method.

A Ni powder (average particle size: 0.8 μm) was prepared as an internal electrode material, and ethyl cellulose as an organic binder and terpineol as an organic solvent were added thereto, kneaded using a three-roll mill, and mixed with an internal electrode paste. did.

As a first terminal electrode material, a strontium-based glass frit was added to Cu powder (average particle size: 0.5 μm) and Cu powder in an amount of 7 wt%, and an acrylic resin as an organic binder and an organic solvent were added thereto. Terpineol was added and kneaded using a three-roll mill to obtain a terminal electrode paste.

As a resistor paste, a resole type phenol resin was added to Cu powder (average particle size: 5.0 μm) as a conductive material and kneaded using a three-roll mill to obtain a resistor paste. The mixing ratio of the Cu powder and the resin is Cu: resin = 70: 30, 54:46, 47:53 in terms of weight.
40:60.

In order to obtain a predetermined thickness, several dielectric green sheets are laminated, and the ends of the internal electrode paste are alternately exposed to the outside from the ends of the dielectric layer green sheets by a screen printing method. Then, a predetermined number of green sheets printed as described above were laminated, and finally, a predetermined number of green sheets on which internal electrodes were not printed were laminated and thermocompression-bonded. Next, the shape of the chip after firing is 3 × 4 × 3.
It was cut to 2 × 1.6 × 1.0 mm to obtain a green chip.

The obtained green chip was moistened with N ₂ +
In an H ₂ (H ₂ : 3%) atmosphere, the mixture was fired at 1300 ° C. for 3 hours, and then fired at 1000 ° C. for 2 hours in a humidified H ₂ oxygen partial pressure of 10 ⁻⁷ atm. I got a body. The paste for the Cu terminal electrode was applied to both ends of the obtained sintered body, dried, and then placed in an N ₂ -H ₂ atmosphere at 770.
The temperature was kept at 10 ° C. for 10 minutes to obtain a first terminal electrode layer.

Next, a resistor paste was formed on the first terminal electrode layer by dipping. Pre-drying at 100 ° C
After about 30 minutes, the resin was cured in a heat atmosphere at 150 ° C. for 30 minutes to form a second terminal electrode layer.

When ten samples were polished and the film thickness of the resistor was observed by SEM, it was 100 ± 10 μm.

A Ni layer and a Sn layer were sequentially formed on the surface of the terminal electrode by electrolytic plating to obtain a multilayer chip capacitor having a resistance function. The capacitance of the obtained sample is 1
μF.

Table 1 shows the results obtained by measuring the ESR. Here, the ESR of 30 samples was measured under one condition, and the average value was recorded (Nos. 1 to 4). Further, as a reference example, a multilayer chip capacitor in which the second terminal electrode layer was not formed was manufactured, and the ESR measurement results were similarly shown in Table 1 (No. 5).

[0079]

[Table 1]

As is clear from the table, the ESR of the multilayer ceramic capacitor can be increased by forming a resistor made of a conductor and a curable resin on the terminal electrode. The ESR can be easily controlled by changing the ratio of the conductive particles. Since it can be formed at a lower temperature than a conventional fired resistor, energy costs can be reduced and productivity can be improved.

When these electronic components having the ESR are used as a bypass capacitor of a DC-DC converter and operated by changing the switching frequency from 100 kHz to 40 MHz, the input voltage does not fluctuate due to oscillation or the like. It was confirmed that it works properly.

[0082]

According to the present invention, it is not necessary to burn a resistor at a high temperature, it is possible to form a resistor at a low temperature, and it is possible to easily manufacture an electronic component having a resistance function. . For this reason, it is very advantageous in cost and productivity.

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Yasunori Tokuoka 1-13-1 Nihonbashi, Chuo-ku, Tokyo Inside TDK Corporation

Claims (7)

[Claims] An electronic component having a resistor comprising a conductive layer containing conductive particles and a curable resin. 2. The electronic component according to claim 1, wherein the conductive particles are at least one of a metal and a semiconductor. 3. The electronic component according to claim 1, wherein the curable resin is a thermosetting resin. 4. The electronic component is a chip capacitor, and at least one of terminal electrodes has a resistor made of a conductive layer containing conductive particles and a curable resin.
3 electronic components. 5. When the electronic component is a chip capacitor, at least one of the terminal electrodes is formed of two layers, and when the first and second terminal electrode layers are formed from the side in contact with the internal electrode, the second electrode is formed. 5. The electronic component according to claim 4, wherein the layer is a resistor composed of a conductive layer containing conductive particles and a curable resin. 6. The electronic component according to claim 4, wherein the equivalent circuit has a CR or (LC) R series circuit. 7. The method for manufacturing an electronic component according to claim 1, wherein a paste containing conductive particles and a curable resin is applied and cured to form a resistor.