JPH11109002A - Semiconductor resin sealed device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a semiconductor resin sealed device in which the characteristics can be measured for a larger number of unit device elements. SOLUTION: The semiconductor resin sealed device comprises a power supply terminal 14 led out from a package, a GND terminal 15, a built-in element 11 to be measured, at least one switching transistor 16, and a signal switching circuit 12 connected with the switching transistor 16 to switch the switching transistor. The element 11 to be measured is connected in series with the switching transistor 16 and the series circuit is connected between the power supply terminal 14 and the GND terminal 15. Switching is made by connecting the output signal from the signal switching circuit 12 with the gate of the switching transistor 16. According to the circuitry, characteristics of the element 11 can be measured from the outside of the package by controlling the switching transistor 16. The element 11 to be measured includes a resistor element, a sampling transistor, or the like.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor resin encapsulating apparatus, and more particularly to a semiconductor resin encapsulating apparatus including means for evaluating electrical characteristics of circuit elements constituting a semiconductor integrated circuit.

[0002]

2. Description of the Related Art Conventionally, a semiconductor resin sealing device is generally configured as shown in FIG. FIG.
968 discloses a conventional configuration example. In this conventional example, an external ground terminal 1 and an external input terminal 2 which are necessary for the operation of the integrated circuit 5 are provided. External ground terminal 1
The internal ground line 9 is connected to the integrated circuit 5.

In FIG. 4, a first external input terminal 2a
Is connected to a first input circuit 5a in the integrated circuit 5 via a first protection resistor 3a and a first internal input signal line 4a. Similarly, the second external input terminal 2b is connected to a second input circuit 5b in the integrated circuit 5 via a second protection resistor 3b and a second internal signal line 4b. The first and second protection resistors 3a and 3b prevent damage to the internal circuit of the integrated circuit 5 even if excessive electrostatic noise is unexpectedly applied to the first and second external input terminals 2a and 2b, respectively. It is provided to be able to do.

[0004] Between the first input signal line 4a and the internal ground line 9, a switching element 6a composed of an n-channel MOSFET and a sample MOSFET formed equivalently to an n-channel MOSFET incorporated in an integrated circuit.
7a are connected in series. Switching element 6a
Is connected to the external test terminal 10,
The gate electrode of the sample MOSFET 7a is connected to the second internal input signal line 4b.

Therefore, when the high-level signal "1" is supplied to the external test terminal 10 as a test signal, the switching element 6a is turned on. In this state, the sample MO is connected via the external ground terminal 1 originally required for the integrated circuit 5 and the first and second external input terminals 2a and 2b.
In the non-saturated region and the saturated region of the SFET 7a, it is possible to measure various parameters representing electrical characteristics such as the threshold voltage Vth and the current transfer coefficient β. Note that the switching element 6a is a sample MOSFET 7
In order not to affect the measurement of a, for example,
It is necessary to form the sample MOSFET 7a with a relatively large transistor size such that the gate width is about 10 times or more the gate width.

Due to this necessity, when a plurality of sample elements are incorporated in the circuit in the sample element measurement circuit shown in FIG. 4, the number of measurement pins attached to the package is limited, and the sample to be mounted is limited. The number of elements is limited.

[0007]

However, when pursuing high-precision, high-reliability, high-speed measurement characteristics in sample element measurement, a large number of circuit elements and circuit elements having a sufficient margin are incorporated. Need arises. Due to the above-mentioned limitations, it is difficult to insert a sufficient number of simple devices for evaluating each resistor element, various simple transistors, etc. formed in each wiring layer used for the integrated circuit. With problems.

It is an object of the present invention to provide a semiconductor resin sealing device capable of measuring the characteristics of more single device elements.

[0009]

In order to achieve the above object, a semiconductor resin sealing device according to the present invention comprises a power supply terminal, a GND terminal, a built-in device to be measured, and at least one switching transistor. ,
And a signal switching circuit connected to the switching transistor for switching on / off of the switching transistor. By controlling the switching of the switching transistor by the signal switching circuit, the characteristics of the device under test can be measured from outside the package. It is possible.

The device under test may be connected in series with the switching transistor and connected between the power supply terminal and the GND terminal, and the gate of the switching transistor may be connected to the output signal of the signal switching circuit for switching.

Further, the above semiconductor resin sealing device has a signal input terminal for inputting a signal for controlling the operation of the signal switching circuit, and only a switching transistor is connected in series between a power supply terminal and a GND terminal. It is preferable that a reference circuit not including the element to be measured be configured in series connection, and the element to be measured be a resistance element or a sample transistor.

[0012]

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view of a semiconductor resin sealing device according to an embodiment of the present invention. 1 to 3 show one embodiment of the semiconductor resin sealing device of the present invention.

<First Embodiment> FIG. 1 is a block diagram showing a configuration of a first embodiment of a semiconductor resin sealing device according to the present invention. The semiconductor resin sealing device of this embodiment includes a sample element 11, a signal switching circuit 12, a signal input terminal 13, a power supply (Vcc) terminal 14, a GND terminal 15, a switching transistor 16, an integrated circuit 17, and a reference wiring 18.
It consists of each part.

The Vcc terminal 14 of the integrated circuit is connected to the integrated circuit 1
Reference numeral 7 denotes an independent terminal, which is connected to the sample element 11. The switching transistor 16 is turned on / off by a signal from the signal switching circuit 12.

The semiconductor resin sealing device of the present embodiment is connected between the Vcc terminal 14 and the GND terminal 15 in a sealed integrated circuit whose device parameters are to be measured, and is formed on a semiconductor substrate. The sample elements 11a, 11b and 11c using the wiring layer are selected by the switching transistor 16 and the signal switching circuit 12. By this selection switching, the resistance values of the sample elements 11a, 11b, 11c between the terminals 14 and 15 can be measured. Further, a current including the sample element 11 and a current-voltage characteristic are compared by the reference wiring 18. As a result, the sample element 11
A more accurate resistance value of each of a, 11b, and 11c can be measured.

FIG. 2 shows the relationship between the current-voltage relationship of the sample element 11 measured according to the first embodiment.
FIG. 9 is a characteristic diagram showing an example of an IV characteristic. In each of the characteristic curves 21 and 22 of FIG. 2, one symbol 21 represents the sample resistor + IV characteristic of the switching transistor, and the other symbol 22 represents the IV characteristic of the switching transistor. That is, this is an IV characteristic 22 in a state where only the switching transistor to which the sample element 11 is not connected is a measurement characteristic example 21 in a case where the sample element 11 is connected in series to a transistor having the same dimensions as the characteristic 22. Note that the resistance value of the sample element 11 can be calculated from the difference between the respective characteristics 21 and 22.

<Second Embodiment> FIG. 3 is a block diagram showing the configuration of a second embodiment of the semiconductor resin sealing device according to the present invention. The semiconductor resin sealing device of the second embodiment includes a signal switching circuit 12, a signal input terminal 13, a power supply (Vcc) terminal 14, a GND terminal 15, a reference wiring 18, a sample transistor 19, and a common gate voltage application terminal 20.
It consists of each part of. In the present embodiment, the first
The sample transistor elements 19a to 19c are used as devices to be measured, in contrast to the case where the resistance device of the embodiment is used as the device to be measured.

In FIG. 3, the gate electrodes of the respective transistor elements 19a to 19c are connected to a separately provided voltage applying terminal 20. By the same signal switching circuit 12 as in the first embodiment, the drain terminals of the sample transistor elements 19a to 19c to be measured are selected,
It is connected to the Vcc terminal 14 to make it measurable.

According to each of the above embodiments, in order to enable measurement of more electrical characteristics of the sample element 11 with a limited number of external terminals of the package, two or more of the internal elements for signal switching and the like are internally provided. It has input pins and the following output signal lines of the number of input pins. In addition, a terminal from which a signal output line is drawn out of the package and a sample measuring element are connected in series, and a signal switching circuit 12 connected to a switching transistor is provided. The sample element 11 to be measured is determined by a combination of signals input to the signal switching circuit.
Only the external terminals are connected, and the electrical characteristics are measured. This makes it possible to measure more characteristics of the sample element 11 with a limited number of external terminals.

The above embodiment is an example of a preferred embodiment of the present invention. However, it is not limited to this.
Various modifications can be made without departing from the spirit of the present invention.

[0021]

As is clear from the above description, the semiconductor resin sealing device of the present invention measures the characteristics of the device under test from outside the package by controlling the on / off switching of the switching transistor by the signal switching circuit. It is possible. Therefore, it is possible to measure the characteristics of a larger number of single device elements without breaking the package using the terminals taken out of the package in which the integrated circuit formed on the semiconductor substrate is sealed.

[Brief description of the drawings]

FIG. 1 is a circuit configuration diagram showing a first embodiment of a semiconductor resin sealing device of the present invention.

FIG. 2 is a diagram illustrating an example of electrical characteristics according to the first embodiment of the present invention.

FIG. 3 is a circuit configuration diagram showing a second embodiment of the semiconductor resin sealing device of the present invention.

FIG. 4 is a circuit diagram showing a configuration example of a conventional semiconductor resin sealing device.

[Explanation of symbols]

REFERENCE SIGNS LIST 1 external ground terminal 2 external input terminal 3 protection resistor 4 internal signal line 5 integrated circuit 6 switching element 7 sample MOS transistor 10 external TEST terminal 11 sample element 12 signal switching circuit 13 signal input terminal 14 power supply (Vcc) terminal 15 GND terminal 16 Switching transistor 17 Integrated circuit 18 Reference wiring 19 Sample transistor 20 Terminal for applying common gate voltage 21 Sample resistance + I− of switching transistor
V characteristics 22 IV characteristics of switching transistors

Claims (6)

[Claims] A power supply terminal extracted from a package;
A signal switching circuit configured to include a GND terminal, a built-in device to be measured, at least one switching transistor, and a signal switching circuit connected to the switching transistor for switching on / off of the switching transistor. Wherein the characteristics of the device to be measured can be measured from outside the package by the switching control of the switching transistor. 2. The device under test is connected in series with the switching transistor, and is connected to the power supply terminal and GND.
2. The semiconductor resin sealing device according to claim 1, wherein the switching is performed between the terminals, and a gate of the switching transistor is connected to an output signal of the signal switching circuit to perform the switching. 3. The semiconductor resin sealing device according to claim 1, wherein the semiconductor resin sealing device further has a signal input terminal for inputting a signal for controlling an operation of the signal switching circuit. . 4. The reference circuit according to claim 1, wherein only the switching transistor is connected in series between the power supply terminal and the GND terminal, and a reference circuit not including the device under test is configured during the series connection. 4. The semiconductor resin sealing device according to claim 3. 5. The semiconductor resin sealing device according to claim 1, wherein the element to be measured is a resistance element. 6. The semiconductor resin sealing device according to claim 1, wherein the device to be measured is a sample transistor.