JPH11102914A - Thermal treatment device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make a work uniform in temperature through its surface by a method wherein a thermal treatment device is equipped with a first heater which heats up the work, a second heater which heats up a susceptor, and a heat equalizing plate arranged between the work and the first heater. SOLUTION: A suscepter 30 is provided on a susceptor pad 29 located at the center of a processing chamber 21, an opening 30a is provided at the center of the susceptor 30, and a wafer 31 is placed on a stepped part around the opening 30a. A heater pad 32 is provided inside the susceptor pad 29, and a susceptor heater (second heater) 33 which heats the susceptor 30 and a wafer heater 34 (first heater) which heats the wafer 31 are arranged on the heater pad 32. A circular heat equalizing plate 35 is provided between the wafer heater 34 and the wafer 31. By this setup, a heating source apparently becomes a circular flat plate and serves as a uniform heating source. Therefore, the wafer 31 can be kept uniform in temperature distribution through its surface.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD The present invention relates to a heat treatment apparatus,
In particular, the present invention relates to a heat treatment apparatus including a heater for heating an object to be processed and a susceptor supporting the object to be processed.

[0002]

2. Description of the Related Art Conventionally, a heat treatment apparatus shown in FIG. 4 is known (Japanese Patent Laid-Open No. 3-97222). Reference numeral 1 in the figure is a reaction chamber. The reaction chamber 1 is provided with a reaction gas inlet 2 and an exhaust port 3. Reaction chamber 1
Inside, a quartz heater cover 5 is provided via an O-ring 4, and a gas introduction passage 6 for an inert gas is provided in the center. A heater case 7 is supported by a support member 8 at an upper portion in the quartz heater cover 5, and a spiral flat carbon heater 9 having a thickness of several millimeters is installed on the heater case 7. Here, the carbon heater 9 is electrically divided into three zones: an inner zone, a central zone, and an outer zone, and each zone is independently controlled in power. The carbon heater 9
A susceptor that indirectly heats the wafer 12 with the support 10
11 are provided. An inert gas flow section 13 is provided between the susceptor 11 and the quartz heater cover 5.
Reference numeral 14 in the drawing denotes an exhaust port for exhausting the inside of the quartz heater cover 5.

[0003]

In the heat treatment apparatus shown in FIG. 4, since the wafer 12 is indirectly heated by the spiral flat carbon heater 9, the uniformity of the wafer 12 is reduced. Depending on the planar shape, the wafer 12
There is a problem that the in-plane temperature distribution is not uniform.

The present invention has been made in view of such circumstances, and includes a first heater for heating an object to be processed, a second heater for heating a susceptor, and a heater disposed between the first heater and the object to be processed. By having a configuration equipped with a heat equalizing plate,
It is an object of the present invention to provide a heat treatment apparatus capable of making the in-plane temperature distribution of an object to be processed uniform.

Further, according to the present invention, a first heater and a second heater are provided on a surface of a carbon graphite base material by Si.
An object of the present invention is to provide a heat treatment apparatus having excellent corrosion resistance by adopting a structure coated with a C film or a glassy carbon film.

Further, according to the present invention, by providing means for measuring the temperature of the surface of the object to be processed, the temperature of the surface of the object to be processed is fed back to the first heater and the second heater, and An object of the present invention is to provide a heat treatment apparatus capable of automatically managing the surface temperature.

[0007]

According to the present invention, there is provided a processing chamber, a susceptor disposed in the processing chamber and supporting an object to be processed, a first heater for heating the object to be processed, and a heater for heating the susceptor. And a heat equalizing plate disposed between the workpiece and the first heater.

In the present invention, as the first heater,
For example, it is preferable to adopt a configuration in which a SiC coating or a glassy carbon coating is coated on the surface of a carbon graphite base material. Thereby, corrosion resistance can be improved.

In the present invention, means for measuring the temperature of the surface of the object to be processed, for example, a radiation thermometer is provided directly above the substrate.
Preferably, this is electrically connected to the first heater and the second heater. Thus, management of the surface temperature of the object to be processed can be automated.

[0010]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will now be described with reference to FIGS.
This will be described with reference to FIG. Reference numeral 21 in the figure is a processing chamber. The processing chamber 21 includes a cylindrical body 22 and upper and lower lids 24 and 25 provided above and below the cylindrical body 22 via O-rings 23, respectively.
It is composed of An opening is provided at the center of the upper lid 24.
24a is provided, and a transparent plate 26 is provided in the opening 24a. Above the plate 26, a radiation thermometer 27 for measuring the temperature of the surface of the wafer described later is arranged. The lower cover 25 is provided with an exhaust port 28. The radiation thermometer 27 is electrically connected to a susceptor heater 33 and a wafer heater 34 to be described later.

A susceptor pedestal 29 is provided at the center of the processing chamber 21, and the susceptor 30 is placed on the susceptor pedestal 29.
Is provided. In the center of the susceptor 30, an opening 30 is provided.
a is provided at a step around the opening 30a.
31 is placed. A heater support 32 is provided inside the susceptor support 29, and a susceptor heater (second heater) 33 for heating the susceptor 30 and a wafer heater (second heater) for heating the wafer 31 are provided on the heater support 32. 1 heater) 34
Is arranged.

Here, the planar shape of the susceptor heater 33 is a ring shape as shown in FIGS. 2 (A) and 2 (B). On the other hand, the planar shape of the wafer heater 34 is shown in FIGS.
It has a spiral shape as shown in FIG. Both heaters have a configuration in which the surface of a carbon graphite base material is coated with a SiC coating or a glassy carbon coating. Note that 34a and 34b in FIG. 3 are electrode terminals of the heater 34.
A disc-shaped soaking plate 35 is provided between the wafer heater 34 and the wafer 31.

According to the heat treatment apparatus of the above embodiment, the wafer 31 is heated by the wafer heater 34, and the susceptor 30 is heated by the susceptor heater 33. Even if the edge of the wafer 31 is placed in contact with the step of the susceptor 30, the susceptor heater 33 heats the susceptor 30 so that the edge of the wafer 31 Can be heated indirectly. Also, heater for wafer
34 is a spiral shape, and there are places where there is no heater part,
Since the disc-shaped soaking plate 35 is disposed between the wafer heater 34 and the wafer 31, the heating source is apparently the entire surface of the circular flat plate, and is a uniform heating source. Therefore, the temperature distribution in the surface of the wafer 31 can be made uniform.

Further, the heater 33 for the susceptor and the heater 34 for the wafer are provided on the surface of a carbon graphite base material.
Since it is configured to be coated with the C film or the glassy carbon film, it has good corrosion resistance, can reduce the deterioration of the device constituent materials at the time of cleaning, and can extend the life cycle.

Further, since the radiation thermometer 27 for measuring the surface temperature of the wafer 31 is provided right above the wafer 31, the temperature of the surface of the wafer 31 is measured by a heater for the wafer (first heater). Feedback to the susceptor heater (second heater) 33 and the susceptor heater (second heater) 33 can automate the management of the surface temperature of the processing object. The material of each component in the above embodiment is an example, and it goes without saying that another material may be used.

[0016]

As described above in detail, according to the present invention, the first heater for heating the object to be processed, the second heater for heating the susceptor, and the first heater and the second heater are arranged between the first heater and the object to be processed. With the configuration including the heat equalizing plate, a heat treatment apparatus capable of making the in-plane temperature distribution of the processing object uniform can be provided.

Further, according to the present invention, the first heater and the second heater have excellent corrosion resistance by forming a structure in which the surface of a carbon graphite base material is coated with a SiC film or a glassy carbon film. Heat treatment apparatus can be provided.

Further, according to the present invention, by providing a means for measuring the temperature of the surface of the object to be processed, the temperature of the surface of the object to be processed is fed back to the first heater and the second heater, and It is possible to provide a heat treatment apparatus capable of automatically managing the surface temperature of an object.

[Brief description of the drawings]

FIG. 1 is an explanatory view of a heat treatment apparatus according to one embodiment of the present invention.

2A and 2B are explanatory diagrams of a susceptor heater which is one configuration of the heat treatment apparatus of FIG. 1; FIG. 2A is a plan view, and FIG. 2B is a front view of FIG.

3A and 3B are explanatory views of a heater for a wafer, which is one configuration of the heat treatment apparatus of FIG. 1; FIG. 3A is a plan view, and FIG.
The front view of (A).

FIG. 4 is an explanatory view of a conventional heat treatment apparatus.

[Explanation of symbols]

 21: Processing chamber, 24: Upper lid, 25: Lower lid, 27: Radiation thermometer, 29: Susceptor pedestal, 30: Susceptor, 31: Wafer, 32: Heater pedestal, 33: Heater for susceptor (second heater ), 34: heater for wafer (first heater), 35: soaking plate.

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁶ Identification code FI C23C 14/54 C23C 14/54 D H01L 21/205 H01L 21/205

Claims (3)

[Claims] A processing chamber; a susceptor disposed in the processing chamber and supporting an object to be processed; a first heater for heating the object to be processed; a second heater for heating the susceptor; A heat treatment apparatus comprising: an object to be processed; and a heat equalizing plate disposed between the first heaters. 2. The heat treatment apparatus according to claim 1, wherein the first heater has a structure in which a surface of a carbon graphite substrate is coated with a SiC film or a glassy carbon film. 3. The heat treatment apparatus according to claim 1, further comprising means for measuring a temperature of a surface of the object to be processed.