JPH1079457A - Semiconductor package - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor package which greatly reduces the noise induction at the simultaneous switching as well as reducing the cost. SOLUTION: A semiconductor package comprises an insulating sheet 13 having device holes 14, inner leads 15b which are disposed on a main plane of the sheet 13 and one end of which protrude, to the device holes, semiconductor elements 16 electrically connected to electrode terminals 16a corresponding to the end of the inner leads 15b on the main plane in the form of a face down type, a mother board 17 electrically and mechanically coupled through bumps to pads disposed at the second ends of the inner leads 15b, and metal heat sinks 19 bonded in one body to other main planes of the semiconductor elements 16 and sheet 13. The heat sinks 19 are bonded through conductors 20, at least at one region, and ground potential is given to the heat sinks 19.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor package, and more particularly, to a semiconductor package having an integrated heat radiator and capable of improving circuit characteristics.

[0002]

2. Description of the Related Art A semiconductor element (semiconductor chip) is mounted and mounted on a ceramic multilayer wiring board for the purpose of downsizing electronic equipment or downsizing a circuit mechanism. Semiconductor packages in which the semiconductor package is sealed with a cap or covered with a mold resin and sealed are widely used. In semiconductor packages that consume high power, such as CPUs, a heat sink is attached to the semiconductor package so that predetermined functions are always performed, and heat generated during operation is dissipated. ing.

Further, for the purpose of cost reduction or simplification of the configuration, a semiconductor package in which a semiconductor element is mounted and mounted on a tape carrier having inner leads and bumps for external connection and a heat radiator is provided is also known. ing. FIG. 4 is a sectional view showing a structural example of the semiconductor package.

In FIG. 4, reference numeral 1 denotes an insulating sheet having a device hole 2; 3a, a signal line provided on one main surface of the insulating sheet 1; 3b, a signal line connected to the signal line 3a; Inner leads 4 projecting into the holes are ground layers provided on the other main surface of the insulating sheet 1. Here, the signal lines 3a and the inner leads 3b are formed by patterning a Cu alloy layer or a 42Ni alloy layer, for example, and correspond to the electrode terminals 5a of the semiconductor element 5 to be mounted. The electrode terminal 5a of the semiconductor element 5 corresponding to the front end of the semiconductor device 5 is electrically connected and disposed.

A mother board 6 electrically and mechanically joins bumps 7 provided on pads on the other end of the signal line group 3a in correspondence with each other.
A metal plate 10 having one main surface joined and integrated on the surface via an adhesive layer 9a, and 10 is integrally joined and arranged on the other main surface side of the semiconductor element 5 and the other main surface side of the metal plate 8. Reference numeral 11 denotes a resin layer which covers and seals one end of the semiconductor element 5 and the inner lead 3b mounted and mounted in the face-down type, and also contributes to reinforcement. In addition,
Reference numeral 12 denotes a through-hole connecting portion for applying a potential of the ground wiring layer 4 to the signal line 3a surface.

[0006]

By employing the configuration shown in FIG. 4, the malfunction of a circuit system using this semiconductor package as a circuit element can be prevented. That is, the signal line 3a and the inner lead
In a configuration in which the semiconductor element 5 is mounted and mounted face-down using the insulating film 1 on which the wiring pattern 3b is patterned as a carrier, electrode terminals (pads) 5a on the surface of the semiconductor element 5 are provided.
The pitch can be reduced to about 50 μm. In other words, in the case of the wire bonding technique, the pitch of the electrode terminals 5a on the surface of the semiconductor element 5 is about 100 μm, but about 50 μm, and fine connection is possible. Therefore, the total wiring length in the semiconductor package is relatively small. become longer.

Therefore, crosstalk noise is induced due to an increase in the mutual inductance of the signal lines in the package, which causes a malfunction of the circuit system. In the above configuration, the potential of the ground wiring layer 4 is placed on the signal wiring 3a surface side. , The reliability of the circuit function is improved.

However, the manufacturing process of the carrier film is complicated, and its practicality is limited. That is, the process of forming the pattern of the signal lines 3a and the inner leads 3b on one main surface of the insulating film 1 and the process of forming the ground pattern layer on the other main surface are complicated, and the cost is greatly increased and the use is limited. It can be said that cost reduction, simplification of configuration, versatility, etc. are hindered.

SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and has as its object to provide a semiconductor package in which crosstalk noise caused by electromagnetic interaction between adjacent signal lines is reduced while reducing costs. I do.

[0010]

According to a first aspect of the present invention, there is provided an insulating sheet having a device hole, and an inner lead group provided on one main surface of the insulating sheet and having one end protruding into the device hole. An electrode terminal on one main surface corresponding to one end of the inner lead group is electrically connected to the semiconductor element arranged face-down type, and the other end side (signal line side) of the inner lead group A motherboard that electrically and mechanically joins the pads provided in correspondence with each other,
A semiconductor package comprising a metal radiator integrally joined and disposed on the other main surface side of the semiconductor element and the insulating sheet, wherein the radiator includes a conductor in at least a part of a region. A semiconductor package, wherein the semiconductor package is configured to be joined and arranged via a heat radiator and to be provided with a ground potential.

According to a second aspect of the present invention, there is provided an insulating sheet having a device hole, an inner lead group provided on one main surface of the insulating sheet and having one end projecting into the device hole, A semiconductor element which is electrically connected to an electrode terminal on one main surface corresponding to one end and is arranged in a face-down type, and a pad provided on the other end side (signal line side) of the inner lead group, respectively. A motherboard that is electrically and mechanically joined in a corresponding manner, a metal layer that is integrally joined and arranged on the other main surface side of the insulating sheet, and a metal layer that is integrally joined and arranged with the semiconductor element and the metal layer. A heat sink, wherein the heat sink is joined and disposed via a conductor in at least a part of the region, and a ground potential is applied to the heat sink. Characteristic semi It is a body package.

In this configuration, it is preferable that the conductivity type of the base substrate of the semiconductor element in which the required active element region is formed is set so that the ground potential can be easily taken. The invention according to claim 3 is provided on an insulating sheet having a device hole and on one main surface of the insulating sheet,
An inner lead group having one end protruding into a device hole, a semiconductor element electrically connected to an electrode terminal on one main surface corresponding to one end of the inner lead group, and arranged in a face-down type; A motherboard for electrically and mechanically bonding the insulating sheet to the other surface side at the other end side (signal line side) of the lead group through the through hole to the other side and electrically and mechanically bonding the pads provided thereto, and the semiconductor element and the insulating layer And a radiator plate integrally joined to and disposed on the inner lead group surface via the radiator plate, wherein the radiator plate is joined and disposed via a conductor in at least a part of the region, A semiconductor package characterized in that a ground potential is applied to a heat sink.

That is, according to the present invention, a semiconductor package provided with a heat radiator such as a heat radiator is mounted and mounted in a process of examining a problem that crosstalk noise is induced due to mutual inductance of wiring in the package. When the semiconductor element and the radiator adjacent to each other are electrically connected, and the radiator has a ground potential, the crosstalk noise caused by the capacitive and inductive coupling between the signal lines can be reduced to some extent. I found it.
By employing a form in which a heat radiator is used as a ground layer, crosstalk noise caused by electromagnetic interaction between adjacent signal lines is reduced, and a semiconductor package that can avoid malfunction of a circuit system has been provided. Things.

In the present invention, the insulating sheet having the device holes is, for example, a polyimide resin film. The thickness of the insulating sheet depends on the kind, shape, size, etc. of the semiconductor package to be formed. Typically
The size and planar shape of the device hole are set according to the size and planar shape of the semiconductor element to be mounted / mounted.

Further, an inner lead group disposed on one main surface of the insulating film and having one end protruding into the device hole generally has a configuration in which the other end forms a signal line. , Cu-based alloys or Ni-based alloys. And, in general,
It can be formed by vapor deposition patterning on the insulating film surface, or photo-patterning of an alloy layer provided on the insulating film surface.

The pitch and arrangement of the inner leads naturally correspond to the pitch and arrangement of the electrode terminals of the semiconductor element to be mounted and mounted, but must also correspond to the connected portion of the motherboard to be incorporated. For connection with the motherboard, it is desirable to provide in advance a bump made of a material such as solder on the pad surface of the signal line connected to the other end of each inner lead.

In the present invention, the heat radiator integrally joined and arranged on the semiconductor element may be a single metal plate, an aluminum nitride plate,
Alternatively, a configuration in which a plurality of these layers are arranged in a stacked manner may be mentioned, and these also serve as an electrical ground layer. The thickness and shape of the heat radiator are appropriately selected in consideration of the capacity of the semiconductor element and heat dissipation. Examples of the conductor that integrally joins the radiator include a conductive adhesive and a conductive metal having a soldering action.

According to the third aspect of the present invention, the pad provided on the other end side of the inner lead group, in other words, on the signal line side by leading the insulating sheet to the other surface side, is provided on the electrode terminal surface from which the through hole is led. A configuration with solder bumps,
Alternatively, a configuration may be adopted in which the through hole diameter is made larger and the inside of the through hole is filled (derived) with solder bumps. Then, by adopting such a through hole deriving (connection) method, the ground plane is close to the signal line.
The coupling constant of the capacitive coupling is reduced, and reduction of crosstalk noise is promoted.

According to the first to third aspects of the present invention, a carrier film having a simple structure with single-sided wiring and obtained at a low cost is used, and a ground potential layer is provided on the surface on which the semiconductor element is mounted and mounted. The heat dissipating body, which also serves as a heat sink, is joined and integrated. In other words, there is provided a semiconductor package that maintains stable performance by heat radiation without complicated processes and the like and simplification of the configuration.

Further, the present invention provides a semiconductor package in which the performance is stabilized and the induction of crosstalk noise due to the electromagnetic interaction between adjacent signal lines is prevented, and a circuit system including such a semiconductor package as a circuit element is provided. This will greatly contribute to the elimination of malfunctions or the generalization of this type of semiconductor package.

Here, the "crosstalk" caused by the electromagnetic interaction between signal lines is as follows, assuming that the coupling line length is l, the half wavelength of the signal is λ _c , and the voltage applied to the induction line is V _0. , As shown in the following equation.

[0022]

(Equation 1)

(Equation 2) Here, C ₁₂ (capacitance between lines) mutual capacitance is _{[F / m] C 11,} C 22 is self-capacitance (ground capacitance) [F / m] L ₁₂ is mutual inductance _{[H / m] L 11,} L 22 In the first and second aspects of the present invention, when the heat radiator and the metal layer are set to the ground potential, the self-capacitances C ₁₁ and C ₂₂ increase, and the crosstalk noise increases. Power is reduced.

[0023]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment will be described below with reference to FIGS.

FIG. 1 is a cross-sectional view showing a main structure of a semiconductor package according to a first embodiment. In FIG. 1, 13 is an insulating sheet (for example, a polyimide resin film) having a device hole 14, 15a is a signal line provided on one main surface of the insulating sheet 13, and 15b is connected to the signal line 15a. The tip portion is an inner lead group protruding into the device hole 14. Here, the signal line 15a and the inner lead 15b are formed by patterning a Cu alloy layer or a 42Ni alloy layer, for example, and are mounted on a semiconductor element.
It corresponds to the pitch group of the 16 electrode terminals 16a, and the electrode terminals 16a of the semiconductor element 16 corresponding to the tips of the inner leads 15b are electrically connected and arranged face-down.

Reference numeral 17 denotes a motherboard (for example, a ceramic circuit board) for electrically and mechanically bonding the bumps 18 provided on the pads on the other end of the signal line 15a in a corresponding manner. Further, 19 is provided on the other main surface of the insulating sheet 13 via an insulating adhesive layer 20,
16 is a cap-type heat radiator that also serves as a ground potential layer, one main surface of which is joined and integrated on the other main surface via a conductive adhesive layer 21. Here, the heat radiator 19 is made of, for example, copper or aluminum, and is electrically connected to the other main surface side of the semiconductor element 16 via the conductive adhesive layer 21. Reference numeral 22 denotes a resin layer that covers and seals the semiconductor element 16, the inner leads 15b, and one end of the signal line 15a mounted and mounted in the face-down type, and also contributes to reinforcement of the area.

More specifically, in the above configuration, when the outer dimensions of the semiconductor package are 27 × 27 mm, the pitch of the inner leads is 60 μm, and the dimensions of the semiconductor element are 10 × 10 mm,
Crosstalk noise caused by electromagnetic interaction between adjacent signal lines in the semiconductor package has been reduced.

FIG. 2 is a sectional view showing a semiconductor package mounting structure according to the second embodiment. In FIG. 2, reference numeral 13 denotes an insulating sheet (for example, a polyimide resin film) having a device hole 14, 15a denotes a signal line disposed on one main surface of the insulating sheet 13, and 15b denotes one end of the signal line 15a. A group of inner leads that are connected and whose leading end protrudes into the device hole 14. Here, the signal lines 15a and the inner leads 15b are formed by patterning a Cu alloy layer or a 42Ni alloy layer, for example, and correspond to the pitch group of the electrode terminals 16a of the semiconductor element 16 to be mounted. The electrode terminals 16a of the semiconductor element 16 corresponding to the tips of the electrodes are electrically connected and arranged face-down.

Reference numeral 17 denotes a motherboard (for example, a ceramic circuit board) for electrically and mechanically bonding the bumps 18 provided on the pads at the other end of the signal line 15a in a corresponding manner. Further, 23 has one main surface joined to the other main surface of the insulating sheet 13 via an insulating adhesive layer 20.
Reference numeral 19 denotes an integrated stainless steel-based metal plate. Reference numeral 19 denotes one main surface joined and integrated on the other main surface of the metal plate 23 and the other main surface of the semiconductor element 16 via the conductive adhesive layer 21. The heat radiator also serves as the ground potential layer. Here, the radiator 19
Is made of copper or aluminum, and is electrically connected to the other main surface side of the semiconductor element 16 via the conductive adhesive layer 21. Reference numeral 22 denotes a resin layer that covers and seals the semiconductor element 16, the inner leads 15b, and one end of the signal line 15a mounted and mounted in the face-down type, and also contributes to reinforcement of the area.

More specifically, in the above configuration, when the outer dimensions of the semiconductor package are 27 × 27 mm, the pitch of the inner leads is 60 μm, and the dimensions of the semiconductor element are 10 × 10 mm,
Crosstalk noise caused by electromagnetic interaction between adjacent signal lines in the semiconductor package has been reduced.

FIGS. 3A and 3B are sectional views showing different mounting structures of the semiconductor package according to the third embodiment. 2A and 2B, reference numeral 13 denotes an insulating sheet (for example, a polyimide resin film) having a device hole 14, 15a denotes a signal line disposed on one main surface of the insulating sheet 13, and 15b denotes a signal line. One end is connected to the signal line 15a, and the other end is an inner lead group protruding into the device hole 14. Here, signal line 15a and inner lead
15b is formed by patterning a Cu alloy layer or a 42Ni alloy layer, for example, and electrode terminals 1 of the semiconductor element 16 to be mounted.
It corresponds to the pitch group of 6a, and this inner lead 15b
The electrode terminals 16a corresponding to the tips of the electrodes are electrically connected and arranged face-down.

Reference numeral 17 denotes the other end of the signal line 15a.
This is a motherboard (for example, a ceramic circuit board) that electrically and mechanically joins the bumps 18 provided on the pads (connection terminals) 24 from which the insulating sheet 13 is drawn out 13a through the through holes 13a. In the configuration shown in FIG. 3B, the solder bumps through which the insulating sheet 13 is penetrated (through holes) at the other end of the signal line 15a are provided.
18 'corresponds to the connection terminal of the motherboard 17,
Mechanically joined.

Further, reference numeral 19 denotes an insulating adhesive layer 20 on the other main surface of the signal line 15a and an insulating adhesive layer 20 on the other main surface of the semiconductor element 16 on one main surface side via a conductive adhesive layer 21. This is a radiator that also serves as a ground potential layer that is joined and integrated. Here, the heat radiator 19 is a copper or aluminum plate, and is electrically connected to the other main surface side of the semiconductor element 16 via the conductive adhesive layer 21. Reference numeral 22 denotes a resin layer that covers and seals the semiconductor element 16, the inner leads 15b, and one end of the signal line 15a mounted and mounted in the face-down type, and also contributes to reinforcement of the area.

More specifically, in the above configuration, when the outer dimensions of the semiconductor package are 27 × 27 mm, the pitch of the inner leads is about μm mm, and the size of the semiconductor element is 10 × 10 mm, the semiconductor package is close to the semiconductor package. The crosstalk noise caused by the electromagnetic interaction between the signal wirings was further reduced as compared with the case of the above example. That is, since the heat radiator 19 is brought closer to the signal line 15a connecting the inner lead 15b and the pad 24, the self-capacitance (ground capacitance) is further increased, crosstalk noise is reduced, and reliability is improved. Can be

The present invention is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the invention. For example, the heat conductive adhesive layer may be made of solder or brazing material instead of the resin, and the motherboard may be made of a resin other than the ceramic or a metal whose surface is insulated.

[0035]

As can be seen from the above description, according to the semiconductor package of the present invention, the other main surface of the mounted and mounted semiconductor element is joined to the metal heat radiator via the conductor. As a result, the radiator becomes a so-called ground and conductive potential. The self-capacitance (capacity to ground) increases as the heat radiator has the same potential as the ground, and crosstalk noise due to electromagnetic interaction between signal lines is reduced, causing a malfunction of the circuit system. The resolved semiconductor package will be provided. In addition, since it is possible to manufacture the semiconductor device at low cost and with good yield without requiring a complicated operation for the configuration, it can be said that this type of semiconductor package greatly contributes to versatility.

[Brief description of the drawings]

FIG. 1 is a sectional view showing a configuration of a main part of a first embodiment.

FIG. 2 is a sectional view showing a configuration of a main part of a second embodiment.

FIGS. 3 (a) and 3 (b) are cross-sectional views showing different main components of the third embodiment.

FIG. 4 is a cross-sectional view showing a main part configuration of a conventional semiconductor package.

[Explanation of symbols]

 1, 13 insulating tape 2, 14 device hole 3, 15 inner lead (group) 4 ground layer 5, 16 semiconductor element (chip) 5a, 16a electrode terminal 6, 17 ... Motherboard 7,18,18 '... Bump 8,23 ... Metal plate 9a, 9b, 20 ... Insulating adhesive layer 10,19 ... Heat radiator 11,22 ... Sealing resin layer 12 ... Through hole connection part 13a: Through hole extraction 21: Conductive adhesive layer 24: Pad

Claims (3)

[Claims] 1. An insulating sheet having a device hole, an inner lead group provided on one main surface of the insulating sheet and having one end protruding into the device hole, and one end corresponding to one end of the inner lead group. A semiconductor element arranged in a face-down type by electrically connecting electrode terminals on the main surface and pads provided on the other end side of the inner lead group are electrically and mechanically joined to each other. And a metal radiator integrally joined and disposed on the other main surface side of the semiconductor element and the insulating sheet, wherein the radiator has at least a partial area. A semiconductor package characterized in that the semiconductor package is joined and arranged via a conductor, and a ground potential is applied to the radiator. 2. An insulating sheet having a device hole, an inner lead group provided on one main surface of the insulating sheet and having one end protruding into the device hole, and one end corresponding to one end of the inner lead group. A semiconductor element arranged in a face-down type by electrically connecting electrode terminals on the main surface and pads provided on the other end side of the inner lead group are electrically and mechanically joined to each other. Comprising: a motherboard to be bonded; a metal layer integrally joined and arranged on the other main surface side of the insulating sheet; and a heat sink integrally joined and arranged on the semiconductor element and the metal layer. A semiconductor package, wherein the heat sink is joined and disposed at least in part through a conductor, and a ground potential is applied to the heat sink. 3. An insulating sheet having a device hole, an inner lead group disposed on one main surface of the insulating sheet and having one end protruding into the device hole, and one end corresponding to one end of the inner lead group. A semiconductor element in which electrode terminals on the main surface are electrically connected and disposed in a face-down type, and an insulating sheet at the other end side of the inner lead group is provided by leading through holes to the other surface side. What is claimed is: 1. A semiconductor package comprising: a motherboard for electrically and mechanically bonding pads so as to correspond to each other; and a heat sink integrally bonded and arranged on an inner lead group surface via the semiconductor element and an insulating layer. A semiconductor package, wherein the heat radiating plate is joined and arranged at least in a part of the region via a conductor, and a ground potential is applied to the heat radiating plate.