JPH1079406A - Device for probing measuring semiconductor wafer - Google Patents

Device for probing measuring semiconductor wafer

Info

Publication number
JPH1079406A
JPH1079406A JP8232331A JP23233196A JPH1079406A JP H1079406 A JPH1079406 A JP H1079406A JP 8232331 A JP8232331 A JP 8232331A JP 23233196 A JP23233196 A JP 23233196A JP H1079406 A JPH1079406 A JP H1079406A
Authority
JP
Japan
Prior art keywords
stage
probe
measuring
contact
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP8232331A
Other languages
Japanese (ja)
Inventor
Hiroko Yamazaki
裕子 山崎
Toshio Shimizu
寿男 清水
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Original Assignee
Seiko Epson Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp
Priority to JP8232331A priority Critical patent/JPH1079406A/en
Publication of JPH1079406A publication Critical patent/JPH1079406A/en
Withdrawn legal-status Critical Current

Links

Landscapes

  • Testing Of Individual Semiconductor Devices (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

PROBLEM TO BE SOLVED: To effectively detect the connection between a measuring probe and an electrode pad of semiconductor device in the proving device which is used for an electrical test of a semiconductor integrate circuit device. SOLUTION: A stage potential control signal is sent out, and a stage 7 is elevated to the ground level controlled by a stage potential control circuit 8 in a probing device 3. A back side of a semiconductor wafer 6 contacting the stage 7 becomes at the same potential as the stage. Applying a current supplying voltage measurement circuit 2 in a multimeter 1, a current supplying voltage measurement is conducted by all of measuring probes 5. When the electrode pad contacts the measuring probes 5, a measuring result ranging from 0 to 1 V is obtained. Conversely, when it does not contact the measuring probes 5, the same value as the clamp voltage set is obtained. When it does not contact, a stage position control signal capable of elevating the stage position by one step is sent to a stage position control circuit 9 in the probing device 3, and position adjustment is repeated until contacting is made.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、半導体ウエハ上に
形成された半導体集積回路装置の電気的試験を行う際に
使用するプローブ装置に関するもので、特に半導体集積
回路装置と測定用探針の接触の技術に関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a probe device used for conducting an electrical test of a semiconductor integrated circuit device formed on a semiconductor wafer, and more particularly to a contact between a semiconductor integrated circuit device and a measuring probe. Technology.

【0002】[0002]

【従来の技術】一般に、半導体集積回路装置は半導体ウ
エハ上に多数形成され、この半導体ウエハ状態での電気
的試験にはプローブ装置が使用されている。プローブ装
置は、プローブカードに配置された多数の測定用探針
と、半導体集積回路装置の電極パッドを接触させるよう
に構成されており、上記プローブカードの測定用探針と
電気的に接続されたテスタにより、半導体集積回路装置
に所定の信号を供給し、その出力を測定するものであ
る。従来のプローブ装置では、専用の2本のセンサ針を
有するプローブカードを使用し、その2本のセンサ針の
導通により、プローブカードに配置された多数の測定用
探針と、半導体集積回路装置の電極パッドとの接触を検
知している。
2. Description of the Related Art Generally, a large number of semiconductor integrated circuit devices are formed on a semiconductor wafer, and a probe device is used for an electrical test in the semiconductor wafer state. The probe device is configured to contact a large number of measurement probes arranged on the probe card with the electrode pads of the semiconductor integrated circuit device, and is electrically connected to the measurement probe of the probe card. The tester supplies a predetermined signal to the semiconductor integrated circuit device and measures the output. In the conventional probe device, a probe card having two dedicated sensor needles is used, and the conduction of the two sensor needles causes a large number of measurement probes arranged on the probe card to be connected to the semiconductor integrated circuit device. Detects contact with the electrode pad.

【0003】[0003]

【発明が解決しようとする課題】しかし電極パッドがバ
ンプ処理され、ウエハ表面と電極パッドの高さが異なる
半導体集積回路装置の電気的試験の場合や、摩耗のため
プローブカード上の専用センサ針と、他の測定用探針と
の高さに違いが生じてしまった場合等は、都度専用セン
サ針の高さ調整が必要となる。また、2本の専用センサ
針を有するプローブカードでなければ使用できない。つ
まりプローブカードの探針の内、2本をセンサ用に割り
当てなければならない。
However, in the case of an electrical test of a semiconductor integrated circuit device in which the electrode pads are bumped and the height of the electrode pads is different from the surface of the wafer, or because of a special sensor needle on the probe card due to wear. In the case where the height differs from that of another measurement probe, the height of the dedicated sensor needle needs to be adjusted each time. In addition, a probe card having two dedicated sensor needles cannot be used. That is, two of the probes of the probe card must be allocated to the sensors.

【0004】本発明は、上記の問題点を解決するために
なされたもので、プローブカードの専用センサ針を廃止
しても、測定用探針と半導体集積回路装置の電極パッド
との接触の検知を、より効率的に行うことのできる半導
体ウエハ測定用プローブ装置を実現することを目的とす
る。
SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and even if the dedicated sensor needle of the probe card is abolished, the detection of contact between the measuring probe and the electrode pad of the semiconductor integrated circuit device is detected. To realize a semiconductor wafer measurement probe device capable of performing the measurement more efficiently.

【0005】[0005]

【課題を解決するための手段】本発明の半導体ウエハ測
定用プローブ装置は、 a)半導体集積回路装置を載置するステージを、グラン
ドレベルあるいは任意の電位に接続できる制御回路を有
し、測定用探針と半導体集積回路装置の接触を検知する
ための、専用のセンサ針を有しないプローブカードを使
用すること b)プローブカードの全ての測定用探針を、センサ針と
して使用できること c)測定用探針と半導体集積回路装置の接触の検知を、
ソフトウェアを使用して行うこと d)前記接触の検知を行うソフトウェアを、テスタ側で
処理することを特徴としている。
According to the present invention, there is provided a probe apparatus for measuring a semiconductor wafer, comprising: a) a control circuit for connecting a stage on which a semiconductor integrated circuit device is mounted to a ground level or an arbitrary potential; Use a probe card that does not have a dedicated sensor needle to detect contact between the probe and the semiconductor integrated circuit device. B) All measurement probes on the probe card can be used as sensor needles. C) For measurement Detection of contact between the probe and the semiconductor integrated circuit device
Performing using software d) The software for detecting the contact is processed on the tester side.

【0006】[0006]

【発明の実施の形態】以下本発明の半導体ウエハ測定用
プローブ装置の実施例を、図面を参照して説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of a semiconductor wafer measuring probe device according to the present invention will be described below with reference to the drawings.

【0007】図1において、1はテスタ、2は電流印加
電圧測定回路、3はプローブ装置、4はプローブカー
ド、5は測定用探針、6は半導体集積回路装置(半導体
ウエハ)7はステージ、8はステージ電位制御回路、9
はステージ位置制御回路である。
In FIG. 1, 1 is a tester, 2 is a current applied voltage measuring circuit, 3 is a probe device, 4 is a probe card, 5 is a measuring probe, 6 is a semiconductor integrated circuit device (semiconductor wafer) 7 is a stage, 8 is a stage potential control circuit, 9
Is a stage position control circuit.

【0008】半導体集積回路装置6の電極パッドと測定
用探針5とを正しく接触させるための手順は、図2のフ
ローチャートのとおりである。まず、テスタ1からステ
ージ位置制御回路9に制御信号が送られ、半導体集積回
路装置6の電極パッドと測定用探針5が、明らかに離れ
るような初期位置にステージ7が移動する。そしてステ
ージ電位制御信号が出され、プローブ装置3のステージ
電位制御回路8によってステージ7が一定の電位、例え
ばグランドレベルになる。すると、ステージ7に接触し
ている半導体ウエハ6の裏面(基盤)も同電位となる。
この状態でテスタ1内の電流印加電圧測定回路2を使用
して、測定用全探針5に対し、電流印加電圧測定を実施
する。印加電流が数十μAであれば、半導体集積回路装
置6の電極パッドと測定用探針5が接触している場合に
は、測定結果は0Vから1V程度の値が得られる。逆に
接触していない場合は、設定してあるクランプ電圧と同
じ値が得られる。そこでその測定結果から、全ての測定
用探針5が接触していない場合は、プローブ装置3内の
ステージ位置制御回路9に対し、ステージ位置を1ステ
ップ上げるステージ位置制御信号を出して位置の調整を
行い、測定用探針5が1本でも接触したという結果が得
られるまでその調整を繰り返す。この時、測定用探針5
の高さにはバラツキがあるため、接触していない測定用
探針5もあるが、それはプローブ装置3の針圧調整機能
を用いて行うため、1本でも接触が確認されていれば問
題は無い。測定用探針5の接触を確認したら、ステージ
電位制御信号により、ステージ7をグランドから解放す
る。これで、半導体集積回路装置6の電極パッドとプロ
ーブカード4の測定用探針5を正しく接触させることが
できたので、半導体集積回路装置6の電気的試験に移
る。なお、一連の制御で用いられるソフトウェアは、半
導体集積回路装置の種類が変わっても、同一のものを使
用することができる。
A procedure for correctly bringing the electrode pads of the semiconductor integrated circuit device 6 into contact with the measurement probe 5 is as shown in the flowchart of FIG. First, a control signal is sent from the tester 1 to the stage position control circuit 9, and the stage 7 moves to an initial position where the electrode pad of the semiconductor integrated circuit device 6 and the measuring probe 5 are clearly separated. Then, a stage potential control signal is output, and the stage 7 is set to a constant potential, for example, the ground level by the stage potential control circuit 8 of the probe device 3. Then, the back surface (base) of the semiconductor wafer 6 in contact with the stage 7 also has the same potential.
In this state, the current applied voltage measurement is performed on all the measuring probes 5 using the current applied voltage measurement circuit 2 in the tester 1. If the applied current is several tens of μA, and the electrode pad of the semiconductor integrated circuit device 6 is in contact with the measurement probe 5, a measurement result of about 0 V to 1 V is obtained. On the other hand, when there is no contact, the same value as the set clamp voltage is obtained. From the measurement results, if all the measurement probes 5 are not in contact, a stage position control signal for raising the stage position by one step is output to the stage position control circuit 9 in the probe device 3 to adjust the position. And the adjustment is repeated until the result that even one measuring probe 5 comes into contact is obtained. At this time, the measuring probe 5
Some of the measurement probes 5 are not in contact because of the variation in the height of the probe. However, since this is performed using the stylus pressure adjustment function of the probe device 3, the problem is that if at least one contact is confirmed, There is no. When the contact of the measuring probe 5 is confirmed, the stage 7 is released from the ground by the stage potential control signal. As a result, the electrode pads of the semiconductor integrated circuit device 6 and the measuring probe 5 of the probe card 4 can be correctly contacted, and the process moves to the electrical test of the semiconductor integrated circuit device 6. Note that the same software can be used for a series of controls even if the type of the semiconductor integrated circuit device changes.

【0009】[0009]

【発明の効果】以上説明したとおり本発明によれば、専
用のセンサ針を廃止することができるため、センサ針用
に占有していた2本の探針が使用可能となり、ウエハの
オーバーコート上に直接接触するため摩耗の激しかった
センサ針がなくなることで、メンテナンスの回数も減少
する。また、電極パッドがバンプ処理されているような
機種と、バンプ処理されていない機種を切り換える場合
に必要とされていた、測定用探針の高さ調整も不要とな
ることから、検査工数も削減となり、検査費用ひいては
半導体集積回路装置自体のコストダウンが可能となる。
As described above, according to the present invention, the dedicated sensor needle can be eliminated, so that the two probes occupied for the sensor needle can be used, and the over-coating of the wafer can be performed. Since the sensor needles that are intensely worn due to direct contact with the sensor are eliminated, the number of times of maintenance is also reduced. In addition, there is no need to adjust the height of the measurement probe, which is required when switching between models with bumped electrode pads and models without bumped bumps. As a result, it is possible to reduce the inspection cost and, consequently, the cost of the semiconductor integrated circuit device itself.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明の半導体ウエハ測定用プローブ装置の構
成図。
FIG. 1 is a configuration diagram of a semiconductor wafer measurement probe device of the present invention.

【図2】本発明による測定用探針と半導体集積回路装置
の接触検知のフローチャート。
FIG. 2 is a flowchart of contact detection between a measurement probe and a semiconductor integrated circuit device according to the present invention.

【符号の説明】[Explanation of symbols]

1 テスタ 2 電流印加電圧測定回路 3 プローブ装置 4 プローブカード 5 測定用探針 6 半導体集積回路装置(半導体ウエハ) 7 ステージ 8 ステージ電位制御回路 9 ステージ位置制御回路 DESCRIPTION OF SYMBOLS 1 Tester 2 Current applied voltage measuring circuit 3 Probe device 4 Probe card 5 Measurement probe 6 Semiconductor integrated circuit device (semiconductor wafer) 7 Stage 8 Stage potential control circuit 9 Stage position control circuit

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】半導体ウエハ上に形成された半導体集積回
路装置の電気的試験を行うために、半導体集積回路装置
と測定用探針を相対的に移動させ接触させるプローブ装
置において、前記半導体集積回路装置を載置するステー
ジを、グランドレベルあるいは任意の電位に接続できる
制御回路を有し、測定用探針と半導体集積回路装置の接
触を検知するための、専用のセンサ針を有しないプロー
ブカードを使用することを特徴とする、半導体ウエハ測
定用プローブ装置。
1. A probe device for relatively moving and contacting a semiconductor integrated circuit device and a measuring probe in order to conduct an electrical test of a semiconductor integrated circuit device formed on a semiconductor wafer. A probe card that has a control circuit that can connect the stage on which the device is mounted to a ground level or an arbitrary potential, and that does not have a dedicated sensor needle for detecting contact between the measurement probe and the semiconductor integrated circuit device. A probe device for measuring a semiconductor wafer, which is used.
【請求項2】前記プローブ装置において、プローブカー
ドの全ての探針を、センサ針として使用できることを特
徴とする、請求項1記載の半導体ウエハ測定用プローブ
装置。
2. The probe device according to claim 1, wherein all the probes of the probe card can be used as sensor needles.
【請求項3】前記測定用探針と半導体集積回路装置の接
触の検知を、ソフトウェアを使用して行うことを特徴と
する、請求項1記載の半導体ウエハ測定用プローブ装
置。
3. The probe device for semiconductor wafer measurement according to claim 1, wherein the detection of the contact between the measurement probe and the semiconductor integrated circuit device is performed using software.
【請求項4】前記接触の検知を行うソフトウェアを、テ
スタ側で処理することを特徴とする、請求項1記載の半
導体ウエハ測定用プローブ装置。
4. The probe device for measuring a semiconductor wafer according to claim 1, wherein the software for detecting the contact is processed on a tester side.
JP8232331A 1996-09-02 1996-09-02 Device for probing measuring semiconductor wafer Withdrawn JPH1079406A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8232331A JPH1079406A (en) 1996-09-02 1996-09-02 Device for probing measuring semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8232331A JPH1079406A (en) 1996-09-02 1996-09-02 Device for probing measuring semiconductor wafer

Publications (1)

Publication Number Publication Date
JPH1079406A true JPH1079406A (en) 1998-03-24

Family

ID=16937532

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8232331A Withdrawn JPH1079406A (en) 1996-09-02 1996-09-02 Device for probing measuring semiconductor wafer

Country Status (1)

Country Link
JP (1) JPH1079406A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009295707A (en) * 2008-06-04 2009-12-17 Hide Jinbo Probe inspection method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009295707A (en) * 2008-06-04 2009-12-17 Hide Jinbo Probe inspection method

Similar Documents

Publication Publication Date Title
US4673839A (en) Piezoelectric pressure sensing apparatus for integrated circuit testing stations
US6191596B1 (en) Method for detecting a contact position between an object to be measured and measuring pins
US6121783A (en) Method and apparatus for establishing electrical contact between a wafer and a chuck
KR900001040B1 (en) Probe detecting method
JP4456325B2 (en) Inspection method and inspection apparatus
JP3165056B2 (en) Substrate inspection device and substrate inspection method
KR20040029048A (en) Sensor for inspection instrument and inspection instrument
JP2944056B2 (en) Contact detection device for electric circuit measurement probe and electric circuit measurement device using this contact detection device
JPH1079406A (en) Device for probing measuring semiconductor wafer
JP2005044825A (en) Prober equipment and its probe height adjustment method, and process for fabricating semiconductor device
JPH10115653A (en) Conduction inspection device and inspection method thereof and its inspection probe
JP5368440B2 (en) Test system
JP3361311B2 (en) Substrate inspection device and substrate inspection method
JP2003057285A (en) Resistance-measuring apparatus and circuit board inspecting apparatus
JPH06140479A (en) Device for testing semiconductor integrated circuit
JP2977959B2 (en) Semiconductor device and measuring method thereof
JP2588715B2 (en) Probe tip position detection method for probe device
JP3047361B2 (en) Probe needle position detection method
JPH03290940A (en) Wafer table of probing machine
JPS61208840A (en) Detecting method for semiconductor chip
JPH04115545A (en) Probe card
JP2827285B2 (en) Wafer inspection equipment
JPH05198633A (en) Prober for semiconductor wafer
JPH04130639A (en) Method and device for detecting contact of needle of probe card with wafer
JPH0353171A (en) Semiconductor integrated circuit testing device

Legal Events

Date Code Title Description
A300 Application deemed to be withdrawn because no request for examination was validly filed

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 20031104