JPH1075025A - Ceramic circuit board - Google Patents
Ceramic circuit boardInfo
- Publication number
- JPH1075025A JPH1075025A JP14391897A JP14391897A JPH1075025A JP H1075025 A JPH1075025 A JP H1075025A JP 14391897 A JP14391897 A JP 14391897A JP 14391897 A JP14391897 A JP 14391897A JP H1075025 A JPH1075025 A JP H1075025A
- Authority
- JP
- Japan
- Prior art keywords
- circuit board
- ceramic
- substrate
- copper
- oxide layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Laminated Bodies (AREA)
- Ceramic Products (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は半導体装置等に使用
されるセラミックス回路基板に関する。The present invention relates to a ceramic circuit board used for a semiconductor device or the like.
【０００２】[0002]
【従来の技術】従来からアルミナ（Ａｌ2 Ｏ3 ）焼結体
などのように絶縁性に優れたセラミックス基板の表面
に、導電性を有する金属回路板をろう材や接着剤やメタ
ライズ金属層で一体に接合したセラミックス回路基板が
パワートランジスターモジュール用基板やスイッチング
電源モジュール用基板として広く普及している。2. Description of the Related Art Conventionally, a conductive metal circuit board is formed on a surface of a ceramic substrate having excellent insulation properties, such as an alumina (Al 2 O 3 ) sintered body, with a brazing material, an adhesive, or a metallized metal layer. 2. Description of the Related Art A ceramic circuit board integrally joined has been widely used as a substrate for a power transistor module or a substrate for a switching power supply module.
【０００３】しかしながら上記セラミックス回路基板に
おいては、金属回路板とセラミックス基板との間に、ろ
う材や接着剤やメタライズ層のような介在物が存在する
ため、両者間の熱抵抗が大きくなり、金属回路板上に設
けられた半導体素子の発熱を系外に迅速に放熱させるこ
とが困難であるという問題点があった。[0003] However, in the above-mentioned ceramic circuit board, since an intervening material such as a brazing material, an adhesive or a metallized layer exists between the metal circuit board and the ceramic substrate, the thermal resistance between the two increases, and the metal circuit board and the metallized layer become large. There is a problem that it is difficult to quickly radiate heat generated by the semiconductor element provided on the circuit board to the outside of the system.
【０００４】このような問題点を解消するため、近年、
上記ろう材や接着剤やメタライズ層を使用せずに、所定
形状に打ち抜いた金属回路板をセラミックス基板上に接
触配置させて加熱するだけで直接接合する方法が検討さ
れている。すなわち、直接接合法は、セラミックスと金
属とを、ろう材層や接着剤層やメタライズ層などの接合
層を介在させずに直接的に接合する方法である。この直
接接合法では金属中あるいは金属表面に存在する結合剤
（銅の場合は酸素）と金属との共晶液相が生成されて両
部材が直接的に接合される。In order to solve such problems, in recent years,
A method of directly joining a metal circuit board punched into a predetermined shape on a ceramic substrate and heating it without using the brazing material, adhesive or metallized layer has been studied. That is, the direct joining method is a method of directly joining ceramics and a metal without interposing a joining layer such as a brazing material layer, an adhesive layer, and a metallized layer. In this direct joining method, a eutectic liquid phase is generated between the metal and a binder (oxygen in the case of copper) existing in the metal or on the metal surface, and the two members are directly joined.
【０００５】図４〜図６はそれぞれ従来のセラミックス
回路基板の例を示す断面図である。セラミックス基板の
材質としては、アルミナ（Ａｌ2 Ｏ3 ），ジルコニア
（ＺｒＯ2 ），ムライト等の酸化物系セラミックス焼結
体や窒化アルミニウム （ＡｌＮ）などの窒化物系焼結
体が使用される。図４は結合剤としての酸素を含有しな
い銅回路板４をＡｌ2 Ｏ3 基板２表面に直接接合したセ
ラミックス回路基板１を示す。なお接合時に共晶液相を
生成するために、銅回路板４表面には所定厚さの表面酸
化層（酸化銅層）７が予め形成されている。なお、図４
には説明図として表面酸化層を拡大して示しており、表
面酸化層の実際の厚さ、寸法は実際とは異なる。FIGS. 4 to 6 are sectional views showing examples of conventional ceramic circuit boards. As the material of the ceramic substrate, alumina (Al 2 O 3 ), zirconia
An oxide ceramic sintered body such as (ZrO 2 ) and mullite and a nitride sintered body such as aluminum nitride (AlN) are used. FIG. 4 shows a ceramic circuit board 1 in which a copper circuit board 4 containing no oxygen as a binder is directly bonded to the surface of an Al 2 O 3 substrate 2. In order to generate a eutectic liquid phase at the time of joining, a surface oxide layer (copper oxide layer) 7 having a predetermined thickness is formed on the surface of the copper circuit board 4 in advance. FIG.
FIG. 1 shows an enlarged view of the surface oxide layer as an explanatory diagram, and the actual thickness and dimensions of the surface oxide layer are different from the actual ones.
【０００６】このセラミックス回路基板１は、例えば図
４に示すようにＡｌ2 Ｏ3 基板２の表面側に金属回路板
としての銅回路板４が直接接合される一方、背面側に裏
銅板としての銅板５も同様に直接接合され、さらに表面
側の銅回路板４の所定位置に図示しない半田層を介して
半導体素子６が一体に接合された構造を有している。In this ceramic circuit board 1, for example, as shown in FIG. 4, a copper circuit board 4 as a metal circuit board is directly bonded to the front side of an Al 2 O 3 substrate 2, while a back copper plate as a back side is provided on the back side. Similarly, the copper plate 5 has a structure in which the semiconductor element 6 is integrally bonded to a predetermined position of the copper circuit board 4 on the front surface side via a solder layer (not shown).
【０００７】また図５に示す従来のセラミックス回路基
板１ａは、結合剤としての酸素を１００〜１０００ｐｐ
ｍ含有する銅回路基板４ａおよび裏銅板５ａをＡｌ2 Ｏ
3 基板２のそれぞれ表面側および裏面側に直接接合して
形成されている。この場合でも、銅（回路）板中に含有
された酸素が加熱時に接合界面において酸化銅を形成
し、直接接合が行われる。The conventional ceramic circuit board 1a shown in FIG. 5 uses 100 to 1000 pp of oxygen as a binder.
The copper circuit board 4a and back copper plate 5a containing m Al 2 O
The three substrates 2 are directly bonded to the front side and the back side, respectively. Even in this case, oxygen contained in the copper (circuit) plate forms copper oxide at the bonding interface during heating, and direct bonding is performed.
【０００８】なお、上記直接接合法は、Ａｌ2 Ｏ3 など
の酸化物系セラミックスについてのみ直接適用可能であ
り、窒化アルミニウム（ＡｌＮ）基板や窒化けい素（Ｓ
ｉ3Ｎ4 ）基板などの非酸化物系セラミックス基板にそ
のまま適用しても、基板に対する濡れ性が低いため、金
属回路板の充分な接合強度が得られない。The above direct bonding method can be directly applied only to oxide-based ceramics such as Al 2 O 3 , and is applicable to aluminum nitride (AlN) substrates and silicon nitride (S
Even when applied directly to a non-oxide-based ceramic substrate such as an i 3 N 4 ) substrate, sufficient bonding strength of a metal circuit board cannot be obtained due to low wettability to the substrate.
【０００９】そこで、非酸化物系セラミックス基板を使
用する場合には、予めセラミックス基板表面に酸化物層
を形成し、基板に対する濡れ性を高める必要がある。図
６はセラミックス基板としてＡｌＮ基板２ａを使用した
セラミックス回路基板１ｂの構成例を示す断面図であ
る。この場合、金属回路板４ａ，５ａの接合操作前に、
予めＡｌＮ基板２ａを酸化性雰囲気中で加熱処理するこ
とにより、ＡｌＮ基板２ａの全表面に酸化物層（Ａｌ2
Ｏ3 皮膜）３が形成される。Therefore, when a non-oxide ceramic substrate is used, it is necessary to form an oxide layer on the surface of the ceramic substrate in advance to enhance wettability to the substrate. FIG. 6 is a sectional view showing a configuration example of a ceramic circuit board 1b using an AlN substrate 2a as a ceramic substrate. In this case, before the joining operation of the metal circuit boards 4a and 5a,
By subjecting the AlN substrate 2a to heat treatment in an oxidizing atmosphere in advance, an oxide layer (Al 2 O 3) is formed on the entire surface of the AlN substrate 2a.
An O 3 film 3 is formed.
【００１０】上記直接接合法により金属回路板をセラミ
ックス基板に接合したセラミックス回路基板によれば、
接合界面部にろう材や接着剤層が介在しないため、両部
材間の熱抵抗が小さく放熱姓に優れた回路基板が得られ
る。また、セラミックスと金属との間にＭｏ板等を介在
させないような単純構造であるため、小型高実装化が可
能であり、さらに作業工程も短縮できる等の長所を有し
ている。According to the ceramic circuit board in which the metal circuit board is joined to the ceramic substrate by the direct joining method,
Since no brazing material or adhesive layer is interposed at the joint interface, a circuit board having a small heat resistance between the two members and excellent heat dissipation can be obtained. In addition, since it has a simple structure in which a Mo plate or the like is not interposed between ceramics and metal, it has advantages in that it can be miniaturized and mounted, and the work process can be shortened.
【００１１】[0011]
【発明が解決しようとする課題】しかしながら、上記の
ように直接接合法によって形成した従来の各セラミック
ス回路基板においては、たとえ酸素を含有した金属回路
板を使用しても、または、表面酸化層を形成した金属回
路板を使用しても、十分な接合強度を有するセラミック
ス回路基板を容易に製造することは困難であり、より十
分な接合強度と製品特性の安定化が求められていた。However, in each of the conventional ceramic circuit boards formed by the direct bonding method as described above, even if a metal circuit board containing oxygen is used, or a surface oxide layer is formed, Even with the use of the formed metal circuit board, it is difficult to easily produce a ceramic circuit board having a sufficient bonding strength, and more sufficient bonding strength and stable product characteristics have been demanded.
【００１２】本発明は上記問題点を解決するためになさ
れたものであり、特に金属回路板あるいは金属板とセラ
ミックス基板との接合強度を高め回路基板全体としての
機械的強度を改善し、金属回路板の剥離や膨れなどの欠
陥の発生が少ないセラミックス回路基板を提供すること
を目的とする。SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and in particular, it has been proposed to improve the mechanical strength of a circuit board as a whole by increasing the bonding strength between a metal circuit board or a metal plate and a ceramic substrate. An object of the present invention is to provide a ceramic circuit board in which defects such as peeling and swelling of a board are less likely to occur.
【００１３】[0013]
【課題を解決するための手段】本発明者らは上記目的を
達成するために、従来のセラミックス回路基板における
金属回路板の剥離や膨れの発生原因および金属回路板に
未接合部が発生する原因について調査研究を行なった。
その結果、まず接合操作後に金属回路板のピール強度を
測定する際に接合面を観察した結果、未接合部が大きな
面積割合で存在していることを発見した。そして、この
ためにピール強度が低下していることを確認した。ま
た、さらに得られたセラミックス回路基板は上記未接合
部を起点として金属回路板の剥離や膨れが発生し易いこ
とも同時に確認した。さらに、金属回路板の剥離や膨れ
の発生原因としては、金属回路板などの直接接合時に加
熱操作によって生成する共晶液相の生成量が少ないこ
と、および共晶液相とセラミックス基板との濡れ性が悪
いことが大きな原因であると推定した。Means for Solving the Problems In order to achieve the above object, the present inventors have developed a cause of peeling or swelling of a metal circuit board in a conventional ceramic circuit board and a cause of occurrence of an unbonded portion in the metal circuit board. A research study was conducted.
As a result, the joint surface was observed when the peel strength of the metal circuit board was measured after the joining operation. As a result, it was found that the unjoined portion was present in a large area ratio. Then, it was confirmed that the peel strength was reduced. It was also confirmed at the same time that the obtained ceramic circuit board was prone to peeling and swelling of the metal circuit board starting from the unbonded portion. Further, peeling and swelling of the metal circuit board may be caused by a small amount of the eutectic liquid phase generated by a heating operation at the time of direct bonding of the metal circuit board or the like, and a wetting between the eutectic liquid phase and the ceramic substrate. It was presumed that poor sex was the major cause.
【００１４】この原因を解消するために、本発明者らは
上記共晶液相の生成量を増大させ、セラミックス基板に
対する共晶液相の濡れ性を改善する方策を種々検討し
た。その結果、金属回路板に所定量の酸素を含有させる
とともに、さらに金属回路板表面に所定厚さの酸化物層
を形成したときに、セラミックス基板と金属回路板との
接合強度（ピール強度）が大幅に改善され、回路基板の
耐久性が向上することが判明した。In order to eliminate this cause, the present inventors have studied various measures for increasing the amount of the eutectic liquid phase and improving the wettability of the eutectic liquid phase on the ceramic substrate. As a result, when a predetermined amount of oxygen is contained in the metal circuit board and an oxide layer having a predetermined thickness is further formed on the surface of the metal circuit board, the bonding strength (peel strength) between the ceramic substrate and the metal circuit board is reduced. It was found to be greatly improved, and the durability of the circuit board was improved.
【００１５】また、セラミックス基板の表面が平滑であ
るよりも、ホーニング処理等を実施して中心線平均粗さ
（Ｒａ）が５．０〜１０．０μｍの範囲となるように粗
面化加工した場合の方が、基板と金属回路板との接合強
度が増加し、耐久性が優れた回路基板が得られることも
判明した。The surface of the ceramic substrate is roughened so that the center line average roughness (Ra) is in the range of 5.0 to 10.0 μm by performing honing treatment or the like, rather than smoothing the surface. In the case, it was also found that the bonding strength between the substrate and the metal circuit board was increased, and a circuit board having excellent durability was obtained.
【００１６】さらに、セラミックス基板を調製する際
に、特に金属回路板との接合面となるセラミックス基板
の表面部に、液相成分となるイットリアとアルミナとの
化合物を所定量分布させることにより、セラミックス基
板と金属回路板との接合強度をより高めることが可能に
なるという知見を得た。Further, in preparing the ceramic substrate, a predetermined amount of a compound of yttria and alumina, which is a liquid phase component, is distributed on a surface portion of the ceramic substrate, which is a bonding surface with the metal circuit board, to thereby obtain a ceramic substrate. We have found that it is possible to further increase the bonding strength between the substrate and the metal circuit board.
【００１７】本発明は上記知見に基づいて完成されたも
のである。すなわち本発明に係る第１のセラミックス回
路基板は、少なくともセラミックス基板との接合面側の
表面に酸化物層を有するとともに内部に酸素を１００〜
１０００ｐｐｍ含有する金属回路板が、前記セラミック
ス基板に直接接合されていることを特徴とする。The present invention has been completed based on the above findings. That is, the first ceramic circuit board according to the present invention has an oxide layer on at least the surface on the bonding surface side with the ceramic substrate and contains oxygen within 100 to
A metal circuit board containing 1000 ppm is directly bonded to the ceramic substrate.
【００１８】また金属回路板の表面の酸化物層の厚さが
１．０μｍ以上であることを特徴とする。さらに金属回
路板はタフピッチ電解銅から構成するとよい。Further, the thickness of the oxide layer on the surface of the metal circuit board is 1.0 μm or more. Further, the metal circuit board is preferably made of tough pitch electrolytic copper.
【００１９】すなわち、金属回路板は、たとえ酸素を１
００〜１０００ｐｐｍ含有するタフピッチ電解銅であっ
ても表面に予め厚さ１．０μｍ以上の酸化銅層を有する
銅回路板であることが接合強度を向上させるために好ま
しい。That is, even if the metal circuit board has oxygen
Even tough pitch electrolytic copper containing 0.00 to 1000 ppm is preferably a copper circuit board having a copper oxide layer having a thickness of 1.0 μm or more in advance on the surface in order to improve bonding strength.
【００２０】またセラミックス基板が、アルミナ（Ａｌ
2 Ｏ3 ）から成ることを特徴とする。さらにセラミック
ス基板が、窒化アルミニウム（ＡｌＮ）から成り、少な
くとも金属回路板との接合面側の表面に、厚さが０．５
〜１０μｍの酸化物層を有することを特徴とする。また
セラミックス基板が、窒化けい素（Ｓｉ3 Ｎ4 ）から成
り、少なくとも金属回路板との接合面側の表面に、厚さ
が０．５〜１０μｍの酸化物層を有することを特徴とす
る。The ceramic substrate is made of alumina (Al).
2 O 3 ). Further, the ceramic substrate is made of aluminum nitride (AlN), and has a thickness of at least 0.5 on the surface on the bonding surface side with the metal circuit board.
It has an oxide layer of 10 to 10 μm. Further, the ceramic substrate is made of silicon nitride (Si 3 N 4 ), and has an oxide layer having a thickness of 0.5 to 10 μm on at least a surface on a bonding surface side with the metal circuit board.
【００２１】さらに金属回路板は粗面化加工された表面
を有するように形成するとよい。Further, the metal circuit board may be formed to have a roughened surface.
【００２２】また、本発明に係る第２のセラミックス回
路基板は、セラミックス基板に金属回路板を直接接合し
てなるセラミックス回路基板において、前記セラミック
ス基板の接合面側の表面から深さ１００μｍまでの断面
領域についてＥＰＭＡ断面面分析した場合に、液相成分
となるイットリア（Ｙ2 Ｏ3 ）とアルミナ（Ａｌ
2 Ｏ3 ）との化合物の分布割合が面積率換算で１０〜８
０％であることを特徴とする。さらに、上記セラミック
ス基板が窒化アルミニウム（ＡｌＮ）基板で構成すると
よい。また、液相成分となるイットリアとアルミナとの
化合物は、ＹＡＧ，ＹＡＬ，ＹＡＭの少なくとも１種で
あることが望ましい。A second ceramic circuit board according to the present invention is a ceramic circuit board obtained by directly bonding a metal circuit board to a ceramic substrate, wherein a cross section from the surface of the ceramic substrate on the bonding surface side to a depth of 100 μm is provided. When the EPMA cross-section analysis was performed on the region, yttria (Y 2 O 3 ) and alumina (Al
The distribution ratio of the compound with 2 O 3 ) is 10 to 8 in terms of area ratio.
0%. Further, it is preferable that the ceramic substrate is formed of an aluminum nitride (AlN) substrate. The compound of yttria and alumina as a liquid phase component is desirably at least one of YAG, YAL, and YAM.
【００２３】ここで、金属回路板が銅回路板である場
合、直接接合法における結合剤は酸素であるので、この
銅回路板はＣｕ−Ｏ共晶化合物によりセラミックス基板
に接合されることになる。さらに金属回路板がアルミニ
ウム回路板である場合、直接接合法における結合剤はア
ルミニウムが好ましいので、このアルミニウム回路板は
Ａｌ−Ｓｉ共晶化合物によりセラミックス基板に接合さ
れていることが好ましい。Here, when the metal circuit board is a copper circuit board, the bonding agent in the direct bonding method is oxygen, so that the copper circuit board is bonded to the ceramic substrate by a Cu-O eutectic compound. . Further, when the metal circuit board is an aluminum circuit board, since the binder in the direct bonding method is preferably aluminum, the aluminum circuit board is preferably bonded to the ceramics substrate with an Al-Si eutectic compound.
【００２４】本発明に係るセラミックス回路基板に使用
されるセラミックス基板としては、特に限定されるもの
ではなく、酸化アルミニウム（アルミナ：Ａｌ2 Ｏ3 ）
等の酸化物系セラミックス基板の他に、窒化アルミニウ
ム（ＡｌＮ），窒化けい素（Ｓｉ3 Ｎ4 ），窒化チタン
（ＴｉＮ）等の窒化物、炭化けい素（ＳｉＣ），炭化チ
タン（ＴｉＣ）等の炭化物、またはほう化ランタン等の
ほう化物等の非酸化物系セラミックス基板でもよい。こ
れらのセラミックス基板には酸化イットリウムなどの焼
結助剤等が含有されていてもよい。The ceramic substrate used for the ceramic circuit board according to the present invention is not particularly limited, and may be aluminum oxide (alumina: Al 2 O 3 ).
In addition to oxide-based ceramic substrates such as aluminum nitride (AlN), nitrides such as silicon nitride (Si 3 N 4 ) and titanium nitride (TiN), silicon carbide (SiC), titanium carbide (TiC), etc. Or a non-oxide ceramic substrate such as a boride such as lanthanum boride. These ceramic substrates may contain a sintering aid such as yttrium oxide.
【００２５】また上記金属回路板を構成する金属として
は、銅，アルミニウム，鉄，ニッケル，クロム，銀，モ
リブデン，コバルトの単体またはその合金など、基板成
分との共晶化合物を生成し、直接接合法を適用できる金
属であれば特に限定されないが、特に導電性および価格
の観点から銅，アルミニウムまたはその合金が好まし
い。As the metal constituting the metal circuit board, a eutectic compound with a substrate component such as a simple substance of copper, aluminum, iron, nickel, chromium, silver, molybdenum, and cobalt or an alloy thereof is formed, and is directly contacted. The metal is not particularly limited as long as it is a metal to which a legal method can be applied, but copper, aluminum or an alloy thereof is particularly preferable from the viewpoints of conductivity and cost.
【００２６】金属回路板の厚さは、通電容量等を勘案し
て決定されるが、セラミックス基板の厚さを０．２５〜
１．２mmの範囲とする一方、金属回路板の厚さを０．１
〜０．５mmの範囲に設定して両者を組み合せると熱膨張
差による変形などの影響を受けにくくなる。The thickness of the metal circuit board is determined in consideration of the current carrying capacity and the like.
The thickness of the metal circuit board is set to 0.1 mm while the range is set to 1.2 mm.
If they are set in the range of about 0.5 mm and they are combined, the influence of deformation due to a difference in thermal expansion becomes less likely.
【００２７】特に金属回路板として銅回路板を使用する
場合には、酸素を１００〜１０００ｐｐｍ含有するタフ
ピッチ電解銅から成る銅回路板を使用し、さらに後述す
るように銅回路板表面に所定厚さの酸化銅層を予め形成
することにより、直接接合時に、発生するＣｕ−Ｏ共晶
の量を増加させ、基板と銅回路板との接合強度を、より
向上させることができる。In particular, when a copper circuit board is used as a metal circuit board, a copper circuit board made of tough pitch electrolytic copper containing 100 to 1000 ppm of oxygen is used. By forming the copper oxide layer in advance, the amount of Cu—O eutectic generated at the time of direct bonding can be increased, and the bonding strength between the substrate and the copper circuit board can be further improved.
【００２８】上記酸化銅層などの酸化物層は、例えば金
属回路板を大気中において温度１５０〜３６０℃の範囲
にて２０〜１２０秒間加熱する表面酸化処理を実施する
ことによって形成される。ここで、酸化銅層の厚さが１
μｍ未満の場合は、Ｃｕ−Ｏ共晶の発生量が少なくなる
ため、基板と銅回路板との未接合部分が多く、接合強度
を向上させる効果は少ない。一方、酸化銅層の厚さが１
０μｍを超えるように過大にしても、接合強度の改善効
果が少なく、却って銅回路板の導電特性を阻害すること
になる。したがって、銅回路板表面に形成する酸化銅層
の厚さは１〜１０μｍの範囲が好ましい。そして同様の
理由により２〜５μｍの範囲がより望ましい。The oxide layer such as the copper oxide layer is formed, for example, by performing a surface oxidation treatment in which a metal circuit board is heated in the atmosphere at a temperature of 150 to 360 ° C. for 20 to 120 seconds. Here, the thickness of the copper oxide layer is 1
If it is less than μm, the amount of Cu—O eutectic generated is small, so that there are many unjoined portions between the substrate and the copper circuit board, and the effect of improving the joining strength is small. On the other hand, when the thickness of the copper oxide layer is 1
Even if the thickness is excessively larger than 0 μm, the effect of improving the bonding strength is small and the conductive properties of the copper circuit board are rather hindered. Therefore, the thickness of the copper oxide layer formed on the surface of the copper circuit board is preferably in the range of 1 to 10 μm. And for the same reason, the range of 2 to 5 μm is more desirable.
【００２９】また、セラミックス基板の表面が平滑であ
る場合よりも、粗面である方が接合強度が高くなる傾向
がある。なお、上記酸化処理において、加熱温度を高め
たり、処理時間を長くすることにより、セラミックス基
板の表面粗さを増加させることができる。上記表面酸化
処理後におけるセラミックス基板の表面粗さは、中心線
平均粗さ（Ｒａ）が５〜１０μｍの範囲にするとよい。
さらに必要に応じてセラミックス基板表面をホーニング
処理することによって、その表面粗さを調整してもよ
い。Also, the bonding strength tends to be higher when the ceramic substrate has a rough surface than when the surface is smooth. In the oxidation treatment, the surface roughness of the ceramic substrate can be increased by increasing the heating temperature or lengthening the treatment time. The surface roughness of the ceramic substrate after the surface oxidation treatment is preferably such that the center line average roughness (Ra) is in the range of 5 to 10 μm.
Further, if necessary, the surface roughness of the ceramic substrate may be adjusted by performing a honing treatment.
【００３０】なお、直接接合法はＡｌ2 Ｏ3 などの酸化
物系セラミックス基板のみについては直ちに適用可能で
あり、窒化アルミニウムや窒化けい素などの非酸化物系
セラミックス基板にそのまま適用しても基板に対する濡
れ性が低いため、金属回路板の充分な接合強度が得られ
ない。The direct bonding method can be immediately applied to only an oxide-based ceramic substrate such as Al 2 O 3 , and can be directly applied to a non-oxide-based ceramic substrate such as aluminum nitride or silicon nitride. Owing to low wettability to the metal circuit board, sufficient bonding strength of the metal circuit board cannot be obtained.
【００３１】そこでセラミックス基板として非酸化物系
セラミックスを使用する場合には、その非酸化物系セラ
ミックス基板の表面に予め酸化物層を形成し、基板に対
する濡れ性を高める必要がある。この酸化物層は上記非
酸化物系セラミックス基板を、空気中などの酸化雰囲気
中で温度１０００〜１４００℃程度で２〜１５時間加熱
して形成される。この酸化物層の厚さが０．５μｍ未満
の場合には、上記濡れ性の改善効果が少ない一方、１０
μｍを超えるように厚く形成しても改善効果が飽和する
ため、酸化物層の厚さは０．５〜１０μｍの範囲が必要
であり、より好ましくは１〜５μｍの範囲が望ましい。Therefore, when a non-oxide ceramic is used as the ceramic substrate, it is necessary to form an oxide layer on the surface of the non-oxide ceramic substrate in advance to enhance the wettability to the substrate. The oxide layer is formed by heating the non-oxide ceramic substrate in an oxidizing atmosphere such as air at a temperature of about 1000 to 1400 ° C. for 2 to 15 hours. When the thickness of the oxide layer is less than 0.5 μm, the effect of improving the wettability is small,
Since the improvement effect is saturated even if the thickness is increased to exceed μm, the oxide layer needs to have a thickness in the range of 0.5 to 10 μm, more preferably 1 to 5 μm.
【００３２】一方、さらにセラミックス基板として窒化
アルミニウム（ＡｌＮ）基板を使用する場合には、上記
セラミックス基板の接合面側の表面から深さ１００μｍ
までの断面領域についてＥＰＭＡ断面面分析した場合
に、液相成分となるイットリア（Ｙ2 Ｏ3 ）とアルミナ
（Ａｌ2 Ｏ3 ）との化合物の分布割合が面積率換算で１
０〜８０％の範囲となるように調整する必要がある。す
なわち、酸化物層以外にＹ2 Ｏ3 とＡｌ2 Ｏ3 との化合
物を前記所定量分布させる必要がある。On the other hand, when an aluminum nitride (AlN) substrate is further used as the ceramic substrate, a depth of 100 μm from the surface of the ceramic substrate on the bonding surface side is used.
When the EPMA cross-sectional area analysis was performed on the cross-sectional area up to, the distribution ratio of the compound of yttria (Y 2 O 3 ) and alumina (Al 2 O 3 ) as the liquid phase component was 1 in terms of area ratio.
It is necessary to adjust so as to be in the range of 0 to 80%. That is, it is necessary to distribute the compound of Y 2 O 3 and Al 2 O 3 in a predetermined amount other than the oxide layer.
【００３３】上記セラミックス基板の接合面側の表面か
ら深さ１００μｍまでの断面領域は、金属回路板との接
合性に大きく影響を及ぼす領域であり、この断面領域、
すなわちセラミックス基板の接合表面部における上記化
合物の分布割合が１０％未満の場合には、上記接合強度
の改善効果が少ない。一方、上記分布割合が８０％を超
えた場合においても、接合強度は低下する。したがっ
て、上記化合物の分布割合は１０〜８０％の範囲とされ
るが２０〜６０％の範囲がより好ましい。The cross-sectional area from the surface on the bonding surface side of the ceramic substrate to a depth of 100 μm is a region that greatly affects the bondability with the metal circuit board.
That is, when the distribution ratio of the compound on the bonding surface of the ceramic substrate is less than 10%, the effect of improving the bonding strength is small. On the other hand, even when the distribution ratio exceeds 80%, the bonding strength decreases. Therefore, the distribution ratio of the above compound is in the range of 10 to 80%, and more preferably in the range of 20 to 60%.
【００３４】ここで、液相成分となるイットリアとアル
ミナとの化合物としては、ＹＡＧ（イットリウム・アル
ミニウム・ガーネット：３Ｙ2 Ｏ3 ・５Ａｌ2 Ｏ3 ），
ＹＡＬ（イットリウム・アルミニウム：１Ｙ2 Ｏ3 ・１
Ａｌ2 Ｏ3 ），ＹＡＭ（イットリウム・アルミニウム：
３Ｙ2 Ｏ3 ・２Ａｌ2 Ｏ3 ）があり、これらの化合物は
金属回路板との濡れ性を向上させる作用を有し、金属回
路板とセラミックス基板との接合強度を、より高めるこ
とができる。Here, as a compound of yttria and alumina as a liquid phase component, YAG (yttrium aluminum garnet: 3Y 2 O 3 .5Al 2 O 3 ),
YAL (yttrium-aluminum: 1Y 2 O 3 · 1
Al 2 O 3 ), YAM (yttrium aluminum:
3Y 2 O 3 .2Al 2 O 3 ). These compounds have an effect of improving the wettability with the metal circuit board, and can further increase the bonding strength between the metal circuit board and the ceramic substrate.
【００３５】上記のようなイットリアとアルミナとの化
合物のセラミックス基板表面部における分布割合は、基
板原料となるセラミックス原料粉末に対して焼結助剤と
して添加するＹ2 Ｏ3 およびＡｌ2 Ｏ3 の添加量，焼結
温度や焼結時間を適正に制御することにより調整でき
る。例えば、セラミックス基板としてのＡｌＮ基板を製
造する場合は、ＡｌＮ原料粉末に対して１〜１０重量％
のＹ2 Ｏ3 と０．１〜５重量％のＡｌ2 Ｏ3 とを添加
し、得られた原料混合体の成形体表面に窒化ほう素（Ｂ
Ｎ）などから成る敷粉を配置した状態で、非酸化性雰囲
気中で温度１７５０〜１９５０℃で２〜１０時間焼結し
て得られる。The distribution ratio of the compound of yttria and alumina on the surface of the ceramic substrate as described above depends on the amount of Y 2 O 3 and Al 2 O 3 added as a sintering aid to the ceramic raw material powder as the substrate raw material. It can be adjusted by appropriately controlling the amount of addition, sintering temperature and sintering time. For example, when manufacturing an AlN substrate as a ceramic substrate, 1 to 10% by weight based on the AlN raw material powder is used.
Of Y 2 O 3 and 0.1 to 5% by weight of Al 2 O 3 are added, and boron nitride (B
N) and obtained by sintering in a non-oxidizing atmosphere at a temperature of 1750 to 1950 ° C. for 2 to 10 hours in a state where the bedding powder of N) or the like is arranged.
【００３６】特にＡｌＮ成形体表面にＢＮなどの敷粉を
配置することにより、生成したＹＡＧ，ＹＡＬ，ＹＡＭ
などの液相成分が成形体表面部から揮散することが防止
でき、ＡｌＮ基板表面部に液相成分となる化合物が所定
量だけ分布したＡｌＮ基板が得られる。上記化合物の分
布割合は、ＡｌＮ基板の接合表面部の断面領域をＸ線マ
イクロアナライザ（ＥＰＭＡ）による面分析し、特にイ
ットリウム（Ｙ）の集合部の面積割合を定量することに
より容易に測定できる。In particular, YAG, YAL, YAM produced by disposing litter such as BN on the surface of the AlN molded body
Such a liquid phase component can be prevented from volatilizing from the surface of the molded body, and an AlN substrate in which a predetermined amount of a compound to be a liquid phase component is distributed on the surface of the AlN substrate can be obtained. The distribution ratio of the compound can be easily measured by analyzing the cross-sectional area of the bonding surface portion of the AlN substrate with an X-ray microanalyzer (EPMA), and particularly quantifying the area ratio of the yttrium (Y) gathering portion.
【００３７】本発明に係るセラミックス回路基板は、上
記のように製造したセラミックス基板の表面に、前記金
属回路板を直接接合して製造される。The ceramic circuit board according to the present invention is manufactured by directly bonding the metal circuit board to the surface of the ceramic substrate manufactured as described above.
【００３８】ここで上記金属回路板は、ろう材などの接
合剤を使用せずにセラミックス基板表面に直接的に一体
に接合される。すなわち、金属回路板の成分と基板成分
との共晶化合物（共晶融体）を加熱により発生せしめ、
この共晶化合物を接合剤として両部材を接合する、いわ
ゆる直接接合法を使用して接合される。Here, the metal circuit board is directly and integrally bonded to the surface of the ceramic substrate without using a bonding agent such as a brazing material. That is, a eutectic compound (eutectic melt) of the components of the metal circuit board and the substrate component is generated by heating,
The two members are joined using the eutectic compound as a joining agent, that is, a so-called direct joining method is used.
【００３９】そして、セラミックス基板が非酸化物系セ
ラミックスから成り、また金属回路板が銅回路板である
場合には、以下のように接合操作が実施される。すなわ
ち酸化物層を形成したセラミックス基板の表面の所定位
置に、表面酸化層としての酸化銅層を形成した銅回路板
を接触配置して基板方向に押圧した状態で、銅の融点
（１０８３℃）未満で銅−酸化銅の共晶温度（１０６５
℃）以上に加熱し、生成したＣｕ−Ｏ共晶化合物液相
（共晶融体）を接合剤として銅回路板がセラミックス基
板表面に直接的に接合される。この直接接合法は、いわ
ゆる銅直接接合法（ＤＢＣ：Direct Bonding Copper
法）である。When the ceramic substrate is made of non-oxide ceramic and the metal circuit board is a copper circuit board, the joining operation is performed as follows. That is, a copper circuit board having a copper oxide layer formed thereon as a surface oxide layer is placed in contact with a predetermined position on the surface of the ceramic substrate having the oxide layer formed thereon and pressed toward the substrate, and the melting point of copper (1083 ° C.) Below the eutectic temperature of copper-copper oxide (1065
C) or more, and the copper circuit board is directly bonded to the surface of the ceramic substrate using the generated Cu-O eutectic compound liquid phase (eutectic melt) as a bonding agent. This direct bonding method is a so-called direct bonding copper (DBC) method.
Law).
【００４０】一方、金属回路板がアルミニウム回路板で
ある場合には、結合剤としてはＳｉが選択されセラミッ
クス基板表面にＡｌ回路板を押圧した状態でアルミニウ
ム−けい素の共晶温度以上に加熱し、生成したＡｌ−Ｓ
ｉ共晶化合物液相（共晶融体）を接合剤としてＡｌ回路
板がセラミックス基板表面に直接的に接合され、本発明
のセラミックス回路基板が製造される。On the other hand, when the metal circuit board is an aluminum circuit board, Si is selected as a binder, and the aluminum circuit board is heated to a temperature higher than the eutectic temperature of aluminum-silicon while pressing the Al circuit board against the ceramic substrate surface. , Generated Al-S
The Al circuit board is directly bonded to the surface of the ceramic substrate using the i-eutectic compound liquid phase (eutectic melt) as a bonding agent, and the ceramic circuit substrate of the present invention is manufactured.
【００４１】このように直接接合法を使用して金属回路
板をセラミックス基板表面に直接接合して形成した本発
明に係るセラミックス回路基板によれば、金属回路板と
セラミックス基板との間に、接着剤やろう材のような介
在物が存在しないため、両者間の熱抵抗が小さく、金属
回路板上に設けられた半導体素子の発熱を系外に迅速に
放散させることが可能である。According to the ceramic circuit board of the present invention formed by directly bonding the metal circuit board to the surface of the ceramic substrate using the direct bonding method, the bonding between the metal circuit board and the ceramic substrate is performed. Since there is no inclusion such as an agent or a brazing material, the thermal resistance between the two is small, and heat generated by the semiconductor element provided on the metal circuit board can be quickly radiated out of the system.
【００４２】本発明に係るセラミックス回路基板によれ
ば、金属回路板に所定量の酸素が含有されており、また
金属回路板表面に表面酸化層が形成されているため、直
接接合時に必要な共晶融体の生成量を大幅に増加させる
ことができ、またセラミックス基板に対する共晶融体の
濡れ性を大幅に高めることができる。したがって、セラ
ミックス基板と金属回路板との未接合部が減少し、両部
材の接合強度を大幅に高めることができる。また未接合
部に起因する金属回路板の剥離や膨れが効果的に防止で
き、この回路基板を用いた半導体装置を高い製造歩留り
で量産することが可能になる。According to the ceramic circuit board of the present invention, the metal circuit board contains a predetermined amount of oxygen, and the surface oxide layer is formed on the surface of the metal circuit board. The production amount of the eutectic melt can be greatly increased, and the wettability of the eutectic melt to the ceramic substrate can be greatly increased. Therefore, the number of unjoined portions between the ceramic substrate and the metal circuit board is reduced, and the joining strength of both members can be greatly increased. Further, peeling and swelling of the metal circuit board due to the unjoined portion can be effectively prevented, and it becomes possible to mass-produce a semiconductor device using this circuit board with a high production yield.
【００４３】また、金属回路板の接合強度が高いため、
熱サイクルによって回路層が剥離したり、基板に割れが
発生することが少なく、耐熱サイクル特性が著しく向上
し、耐久性および信頼性に優れた半導体装置を提供する
ことができる。Also, since the bonding strength of the metal circuit board is high,
It is possible to provide a semiconductor device in which a circuit layer is less likely to be peeled off or cracks are not generated in a substrate due to a heat cycle, heat resistance cycle characteristics are remarkably improved, and durability and reliability are excellent.
【００４４】さらに、金属回路板との接合面となるセラ
ミックス基板の表面部に、液相成分となるイットリアと
アルミナとの化合物を所定量だけ分布させることによ
り、セラミックス基板と金属回路板との接合強度を、よ
り高めることができる。Further, by distributing a predetermined amount of a compound of yttria and alumina, which is a liquid phase component, on the surface of the ceramic substrate which is a bonding surface with the metal circuit board, the bonding between the ceramic substrate and the metal circuit board is performed. Strength can be further increased.
【００４５】[0045]
【発明の実施の形態】次に本発明の実施形態について以
下に示す実施例を参照して具体的に説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of the present invention will be specifically described with reference to the following examples.
【００４６】実施例１〜５ セラミックス基板として、熱伝導率が７０Ｗ／ｍ・Ｋで
あり、縦５５mm×横３７mm×厚さ０．８mmの窒化アルミ
ニウム（ＡｌＮ）基板を多数用意し、各ＡｌＮ基板を空
気雰囲気の加熱炉中で１３００℃で１２時間加熱するこ
とにより、基板全表面を酸化し厚さ２μｍの酸化物層
（Ａｌ2 Ｏ3 皮膜）を形成した。 Examples 1 to 5 A large number of aluminum nitride (AlN) substrates having a thermal conductivity of 70 W / m · K, a length of 55 mm × a width of 37 mm × a thickness of 0.8 mm were prepared as ceramic substrates. Was heated at 1300 ° C. for 12 hours in a heating furnace in an air atmosphere to oxidize the entire surface of the substrate to form an oxide layer (Al 2 O 3 film) having a thickness of 2 μm.
【００４７】一方、酸素を４０７ｐｐｍ含有し、厚さ
０．３mmおよび０．２５mmのタフピッチ電解銅から成る
銅回路板を多数用意し、各銅回路板を大気に接するホッ
トプレート上に載置した状態で表１に示す酸化条件（温
度，時間）でそれぞれ加熱して表面酸化処理を行ない、
表１に示すような厚さを有する表面酸化層（酸化銅層）
を一体に形成した。On the other hand, a large number of copper circuit boards made of tough pitch electrolytic copper having a thickness of 0.3 mm and 0.25 mm containing 407 ppm of oxygen were prepared, and each copper circuit board was placed on a hot plate in contact with the atmosphere. The surface is oxidized by heating under the oxidizing conditions (temperature and time) shown in Table 1, respectively.
Surface oxide layer (copper oxide layer) having thickness as shown in Table 1
Was integrally formed.
【００４８】次に酸化物層を形成した各ＡｌＮ基板表面
側に、厚さ０．３mmのタフピッチ電解銅から成る銅回路
板を接触配置する一方、背面側に厚さ０．２５mmのタフ
ピッチ銅から成る銅回路板を裏当て材として接触配置さ
せて積層体とし、この積層体を窒素ガス雰囲気に調整し
た温度１０７５℃に設定した加熱炉に挿入して１分間加
熱することにより、各ＡｌＮ基板の両面に銅回路板を直
接接合した実施例１〜５に係るセラミックス回路基板を
それぞれ調製した。Next, a copper circuit board made of tough pitch electrolytic copper having a thickness of 0.3 mm is placed in contact with the surface of each AlN substrate on which the oxide layer is formed, while a copper circuit board made of tough pitch copper having a thickness of 0.25 mm is provided on the back side. The copper circuit board thus formed is placed in contact with a backing material to form a laminate, and the laminate is inserted into a heating furnace set at a temperature of 1075 ° C. adjusted to a nitrogen gas atmosphere and heated for 1 minute, whereby each AlN substrate Ceramic circuit boards according to Examples 1 to 5 in which copper circuit boards were directly bonded to both surfaces were prepared.
【００４９】各セラミックス回路基板１は、図１に示す
ようにＡｌＮ基板２ａの全表面に酸化物層３が形成され
ており、ＡｌＮ基板２ａの表面側に金属回路板としての
銅回路板４ａが直接接合される一方、背面側に裏銅板と
しての銅回路板５ａが同様に直接接合され、さらに表面
側の銅回路板４ａの所定位置に図示しない半田層を介し
て半導体素子６が一体に接合された構造を有する。なお
ＡｌＮ基板２ａの両面に銅回路板４ａ，５ａを接合した
場合、裏銅板としての銅回路板５ａは放熱促進および反
り防止に寄与するので有効である。As shown in FIG. 1, each ceramic circuit board 1 has an oxide layer 3 formed on the entire surface of an AlN substrate 2a, and a copper circuit board 4a as a metal circuit board is provided on the surface side of the AlN substrate 2a. While being directly joined, a copper circuit board 5a as a back copper board is similarly directly joined to the back side, and the semiconductor element 6 is integrally joined to a predetermined position of the front side copper circuit board 4a via a solder layer (not shown). It has the structure which was done. When the copper circuit boards 4a and 5a are joined to both sides of the AlN substrate 2a, the copper circuit board 5a as the back copper plate is effective because it contributes to promoting heat radiation and preventing warpage.
【００５０】比較例１ 一方、各銅回路板について表面酸化処理を実施せず、表
面酸化層（酸化銅層）を形成しない銅回路板を使用した
点以外は実施例１と同一条件で直接接合処理することに
より、比較例１に係るセラミックス回路基板を調製し
た。 Comparative Example 1 On the other hand, direct bonding was performed under the same conditions as in Example 1 except that the surface oxidation treatment was not performed on each copper circuit board and a copper circuit board without forming a surface oxide layer (copper oxide layer) was used. By performing the treatment, the ceramic circuit board according to Comparative Example 1 was prepared.
【００５１】実施例６〜１０ セラミックス基板として、熱伝導率が１７０Ｗ／ｍ・Ｋ
であり、縦５０mm×横２５mm×厚さ０．６３５mmの窒化
アルミニウム（ＡｌＮ）基板を多数用意し、各ＡｌＮ基
板を空気雰囲気の加熱炉中で１３００℃で１２時間加熱
することにより、基板全表面を酸化し厚さ２μｍの酸化
物層（Ａｌ2 Ｏ3 皮膜）を形成した。 Examples 6 to 10 Ceramic substrates having a thermal conductivity of 170 W / m · K
A large number of aluminum nitride (AlN) substrates having a length of 50 mm, a width of 25 mm, and a thickness of 0.635 mm are prepared, and each of the AlN substrates is heated at 1300 ° C. for 12 hours in a heating furnace in an air atmosphere to obtain the entire surface of the substrate. Was oxidized to form an oxide layer (Al 2 O 3 film) having a thickness of 2 μm.
【００５２】一方、酸素を４０７ｐｐｍ含有し、厚さ
０．３mmおよび０．２５mmのタフピッチ電解銅から成る
銅回路板を多数用意し、各銅回路板を大気に接するホッ
トプレート上に載置した状態で表１に示す酸化条件（温
度，時間）でそれぞれ加熱して表面酸化処理を行ない、
表１に示すような厚さを有する表面酸化層（酸化銅層）
を一体に形成した。On the other hand, a large number of copper circuit boards made of tough pitch electrolytic copper having a thickness of 0.3 mm and 0.25 mm containing 407 ppm of oxygen were prepared, and each copper circuit board was placed on a hot plate in contact with the atmosphere. The surface is oxidized by heating under the oxidizing conditions (temperature and time) shown in Table 1, respectively.
Surface oxide layer (copper oxide layer) having thickness as shown in Table 1
Was integrally formed.
【００５３】次に酸化物層を形成した各ＡｌＮ基板表面
側に、厚さ０．３mmのタフピッチ電解銅から成る銅回路
板を接触配置する一方、背面側に厚さ０．２５mmのタフ
ピッチ銅から成る銅回路板を裏当て材として接触配置さ
せて積層体とし、この積層体を窒素ガス雰囲気に調整し
た温度１０７５℃に設定した加熱炉に挿入して１分間加
熱することにより、各ＡｌＮ基板の両面に銅回路板を直
接接合して、図１に示すような実施例６〜１０に係るセ
ラミックス回路基板をそれぞれ調製した。Next, a copper circuit board made of tough pitch electrolytic copper having a thickness of 0.3 mm is placed in contact with the surface of each AlN substrate on which the oxide layer is formed, while a copper circuit board made of tough pitch copper having a thickness of 0.25 mm is formed on the back side. The copper circuit board thus formed is placed in contact with a backing material to form a laminate, and the laminate is inserted into a heating furnace set at a temperature of 1075 ° C. adjusted to a nitrogen gas atmosphere and heated for 1 minute, whereby each AlN substrate Copper circuit boards were directly bonded to both surfaces to prepare ceramic circuit boards according to Examples 6 to 10 as shown in FIG.
【００５４】比較例２ 一方、各銅回路板について表面酸化処理を実施せず、表
面酸化層（酸化銅層）を形成しない銅回路板を使用した
点以外は実施例６と同一条件で直接接合処理することに
より、比較例２に係るセラミックス回路基板を調製し
た。 Comparative Example 2 On the other hand, direct bonding was performed under the same conditions as in Example 6 except that the surface oxidation treatment was not performed on each copper circuit board and a copper circuit board without forming a surface oxide layer (copper oxide layer) was used. By performing the treatment, a ceramic circuit board according to Comparative Example 2 was prepared.
【００５５】上記のように調製した各実施例および比較
例に係る各回路基板について、表面酸化処理後における
銅回路板の酸素含有量を測定して、表１に示す結果を得
た。また各回路基板の強度特性を評価するために、各銅
回路板のピール強度の平均値を測定するとともに、この
ピール強度測定後における銅回路板の剥離面を写真撮影
し、写真上に白色部として残る未接合部の面積率を画像
解析により測定した。各測定結果を下記表１に示す。With respect to the circuit boards according to the examples and the comparative examples prepared as described above, the oxygen content of the copper circuit board after the surface oxidation treatment was measured, and the results shown in Table 1 were obtained. In order to evaluate the strength characteristics of each circuit board, the average value of the peel strength of each copper circuit board was measured, and a photograph of the peeled surface of the copper circuit board after the measurement of the peel strength was taken. Was measured by image analysis. Table 1 below shows the measurement results.
【００５６】[0056]
【表１】 [Table 1]
【００５７】上記表１に示す結果から明らかなように、
結合剤として所定量の酸素を含有する銅回路板であり、
かつ、その接合面に表面酸化層（酸化銅層）を一体に形
成した銅回路板をセラミックス基板表面に直接接合して
成る各実施例に係るセラミックス回路基板によれば、上
記酸化銅層を形成していない比較例１，２の回路基板と
比較して、銅回路板とセラミックス基板との未接合部の
面積率が小さく、またピール強度は１０〜２７％上昇す
ることが確認できた。As is clear from the results shown in Table 1 above,
A copper circuit board containing a predetermined amount of oxygen as a binder,
In addition, according to the ceramic circuit boards according to the embodiments, in which a copper circuit board having a surface oxide layer (copper oxide layer) integrally formed on the bonding surface is directly bonded to the ceramic substrate surface, the copper oxide layer is formed. It was confirmed that the area ratio of the unjoined portion between the copper circuit board and the ceramic substrate was smaller and the peel strength was increased by 10 to 27%, as compared with the circuit boards of Comparative Examples 1 and 2, which were not provided.
【００５８】実施例１１ 実施例１において使用したセラミックス基板であり、酸
化物層（Ａｌ2 Ｏ3 皮膜）を形成したＡｌＮ基板２ａに
代えて、同一厚さを有するアルミナ（Ａｌ2 Ｏ3 ）基板
２を使用した点以外は、実施例１と同様にして銅回路板
をＡｌ2 Ｏ3 基板２表面に直接接合することにより、図
２に示すような実施例１１に係るセラミックス回路基板
１ｄを調製した。なお、銅回路板としては実施例１〜５
用に調製した各銅回路板４ａ，５ａを使用した。各銅回
路板４ａ，５ａの表面には所定厚さの酸化銅層７が形成
されている。 Example 11 An alumina (Al 2 O 3 ) substrate having the same thickness was used instead of the AlN substrate 2a on which the oxide layer (Al 2 O 3 film) was formed, which was the ceramic substrate used in Example 1. A ceramic circuit board 1d according to Example 11 as shown in FIG. 2 was prepared by directly bonding a copper circuit board to the surface of the Al 2 O 3 substrate 2 in the same manner as in Example 1 except for using point No. 2 . did. Examples 1 to 5 were used as copper circuit boards.
Each of the copper circuit boards 4a and 5a prepared for use was used. A copper oxide layer 7 having a predetermined thickness is formed on the surface of each of the copper circuit boards 4a and 5a.
【００５９】一方、比較例として上記酸化銅層を形成し
ていない銅回路板をＡｌ2 Ｏ3 基板に直接接合して比較
例のセラミックス回路基板を調製した。On the other hand, as a comparative example, a copper circuit board having no copper oxide layer was directly bonded to an Al 2 O 3 substrate to prepare a ceramic circuit board of the comparative example.
【００６０】上記酸化銅層７を形成した銅回路板４ａ，
５ａを使用した実施例１１に係るセラミックス回路基板
１ｄのピール強度は、酸化銅層を形成しない比較例のセ
ラミックス回路基板と比較して２２〜３１％増加してお
り、優れた接合強度を有していることが確認できた。The copper circuit board 4a on which the copper oxide layer 7 is formed,
The peel strength of the ceramic circuit board 1d according to Example 11 using 5a is increased by 22 to 31% as compared with the ceramic circuit board of the comparative example in which the copper oxide layer is not formed, and has excellent bonding strength. Was confirmed.
【００６１】実施例１２ 実施例１において使用したセラミックス基板であり、酸
化物層（Ａｌ2 Ｏ3 皮膜）を形成したＡｌＮ基板２ａに
代えて、表面に厚さ２μｍの酸化物層（ＳｉＯ2 皮膜）
３ａを形成した窒化けい素（Ｓｉ3 Ｎ4 ）基板２ｂを使
用した点以外は、実施例１と同様にして銅回路板をＳｉ
3 Ｎ4 基板２ｂ表面に直接接合することにより、図３に
示すような実施例１２に係るセラミックス回路基板１ｅ
を調製した。なお、銅回路板としては実施例１〜５用に
調製した各銅回路板４ａ，５ａを使用した。各銅回路板
４ａ，５ａの表面には所定厚さの酸化銅層７が形成され
ている。 Example 12 The ceramic substrate used in Example 1 was replaced with an AlN substrate 2a having an oxide layer (Al 2 O 3 film) formed thereon, but instead of a 2 μm-thick oxide layer (SiO 2 film) on the surface. )
A copper circuit board was formed in the same manner as in Example 1 except that a silicon nitride (Si 3 N 4 )
By directly joined to 3 N 4 substrate 2b surface, ceramic circuit board 1e according to Embodiment 12, as shown in FIG. 3
Was prepared. In addition, each copper circuit board 4a, 5a prepared for Examples 1-5 was used as a copper circuit board. A copper oxide layer 7 having a predetermined thickness is formed on the surface of each of the copper circuit boards 4a and 5a.
【００６２】一方、比較例として上記酸化銅層を形成し
ていない銅回路板をＳｉ3 Ｎ4 基板に直接接合して比較
例のセラミックス回路基板を調製した。On the other hand, as a comparative example, a copper circuit board having no copper oxide layer was directly bonded to a Si 3 N 4 substrate to prepare a ceramic circuit board of the comparative example.
【００６３】上記酸化銅層７を形成した銅回路板４ａ，
５ａを使用した実施例１２に係るセラミックス回路基板
１ｅのピール強度は、酸化銅層を形成しない比較例のセ
ラミックス回路基板と比較して１８〜２８％増加してお
り、優れた接合強度を有していることが確認できた。The copper circuit board 4 a on which the copper oxide layer 7 is formed,
The peel strength of the ceramic circuit board 1e according to Example 12 using 5a was increased by 18 to 28% as compared with the ceramic circuit board of the comparative example in which the copper oxide layer was not formed, and had excellent bonding strength. Was confirmed.
【００６４】次に金属回路板との接合面となるセラミッ
クス基板表面部における液相成分量を調整したＡｌＮ基
板を用いた実施例について以下に説明する。Next, an embodiment using an AlN substrate in which the amount of a liquid phase component on the surface of a ceramic substrate serving as a bonding surface with a metal circuit board is adjusted will be described below.
【００６５】実施例１３〜１５ 平均粒径３μｍのＡｌＮ原料粉末に対して焼結助剤とし
てのイットリア（Ｙ2Ｏ3 ）とアルミナ（Ａｌ2 Ｏ3 ）
とを表２に示す割合で添加し、エチルアルコール中で３
０時間湿式混合した。乾燥した原料混合物を金型成形機
の型内に充填して１２００kg／cm2 の成形圧力にて圧縮
成形して板状の各ＡｌＮ成形体を調製した。 Examples 13 to 15 Yttrium (Y 2 O 3 ) and alumina (Al 2 O 3 ) as sintering aids for AlN raw material powder having an average particle size of 3 μm
At the ratio shown in Table 2, and added in ethyl alcohol for 3 hours.
Wet mixed for 0 hours. The dried raw material mixture was filled into a mold of a mold molding machine, and compression-molded at a molding pressure of 1200 kg / cm 2 to prepare plate-like AlN molded bodies.
【００６６】次に得られた各ＡｌＮ成形体を、Ｎ2 ガス
を封入した耐圧加熱炉内に配置し、さらに各ＡｌＮ成形
体の表面上に窒化ほう素から成る敷粉を配置した状態で
焼結を実施した。焼結条件は表２に示す通りである。Next, each of the obtained AlN compacts was placed in a pressure-resistant heating furnace filled with N 2 gas, and fired in a state in which a powder of boron nitride was placed on the surface of each AlN compact. A knot was performed. The sintering conditions are as shown in Table 2.
【００６７】そして得られた各ＡｌＮ焼結体の表面をホ
ーニング加工して厚さ１０μｍ相当量を削り取った。し
かる後に各ＡｌＮ焼結体を実施例１と同様に空気雰囲気
の加熱炉内で１３００°で１２時間加熱することによ
り、基板全表面を酸化し、厚さ２μｍの酸化物層（Ａｌ
2 Ｏ3 皮膜）を形成することにより、各実施例用のＡｌ
Ｎ基板とした。Then, the surface of each of the obtained AlN sintered bodies was subjected to honing processing to remove a thickness equivalent to 10 μm. Thereafter, each AlN sintered body was heated at 1300 ° C. for 12 hours in a heating furnace in an air atmosphere in the same manner as in Example 1 to oxidize the entire surface of the substrate, and a 2 μm-thick oxide layer (Al
2 O 3 film) to form an Al film for each embodiment.
An N substrate was used.
【００６８】一方、実施例３で使用したところの厚さ３
μｍの表面酸化層（酸化銅層）を有し、酸素を４０７pp
m 含有する厚さ０．３mmおよび０．２５mmのタフピッチ
電解銅からなる銅回路板を用意した。On the other hand, the thickness 3 used in Example 3
It has a surface oxide layer (copper oxide layer) of μm and oxygen 407pp
A copper circuit board made of tough pitch electrolytic copper having a thickness of 0.3 mm and 0.25 mm was prepared.
【００６９】次に酸化物層を形成した各ＡｌＮ基板表面
側に、厚さ０．３mmのタフピッチ電解銅から成る銅回路
板を接触配置する一方、背面側に厚さ０．２５mmのタフ
ピッチ銅から成る銅回路板を裏当て材として接触配置さ
せて積層体とし、この積層体を窒素ガス雰囲気に調整し
た温度１０７５℃に設定した加熱炉に挿入して１分間加
熱することにより、各ＡｌＮ基板の両面に銅回路板を直
接接合した実施例１３〜２０に係るセラミックス回路基
板をそれぞれ調製した。Next, a copper circuit board made of tough pitch electrolytic copper having a thickness of 0.3 mm was placed in contact with the surface of each AlN substrate on which the oxide layer was formed, while a copper circuit board made of tough pitch copper having a thickness of 0.25 mm was formed on the back side. The copper circuit board thus formed is placed in contact with a backing material to form a laminate, and the laminate is inserted into a heating furnace set at a temperature of 1075 ° C. adjusted to a nitrogen gas atmosphere and heated for 1 minute, whereby each AlN substrate Ceramic circuit boards according to Examples 13 to 20 in which copper circuit boards were directly bonded to both surfaces were prepared.
【００７０】比較例３〜４ 一方、表２に示すようにＡｌＮ原料粉末に添加する焼結
助剤の添加量を過量に設定したり（比較例３，４）し、
さらに、表２に示す条件で焼成を実施した点以外は、前
記実施例１３〜１５と同一の条件で銅回路板の直接接合
を行うことにより、それぞれ比較例３〜４に係るＡｌＮ
回路基板をそれぞれ製造した。 Comparative Examples 3 and 4 On the other hand, as shown in Table 2, the amount of the sintering aid added to the AlN raw material powder was set to an excessive amount (Comparative Examples 3 and 4).
Furthermore, the direct bonding of the copper circuit boards was performed under the same conditions as in Examples 13 to 15 except that the firing was performed under the conditions shown in Table 2, thereby obtaining the AlNs according to Comparative Examples 3 and 4, respectively.
Each of the circuit boards was manufactured.
【００７１】上記のように製造した各実施例１３〜１５
および比較例３〜４に係る各ＡｌＮ回路基板について、
銅回路板のピール強度の平均値を測定するとともに、こ
のピール強度測定後におけるＡｌＮ基板の表面断面部に
おける液相成分（ＹＡＧ，ＹＡＬ，ＹＡＭ）の分布割合
をＥＰＭＡ面分析によって定量し、下記表２に示す結果
を得た。Examples 13 to 15 produced as described above
And about each AlN circuit board according to Comparative Examples 3 and 4,
The average value of the peel strength of the copper circuit board was measured, and the distribution ratio of the liquid phase components (YAG, YAL, YAM) in the surface cross section of the AlN substrate after the measurement of the peel strength was quantified by EPMA surface analysis. The results shown in FIG.
【００７２】[0072]
【表２】 [Table 2]
【００７３】上記表２に示す結果から明らかなように、
ＡｌＮ基板の表面部に、液相成分となるＹＡＧ，ＹＡ
Ｌ，ＹＡＭなどのイットリアとアルミナとの化合物を所
定量だけ分布させた各実施例のＡｌＮ回路基板において
は、過剰量の化合物を分布させた各比較例の回路基板と
比較して、ＡｌＮ基板と銅回路板との接合強度が、より
高くなることが判明した。As is clear from the results shown in Table 2 above,
YAG, YA serving as a liquid phase component is formed on the surface of the AlN substrate.
The AlN circuit board of each embodiment in which the compound of yttria and alumina such as L, YAM and the like is distributed by a predetermined amount, has an AlN substrate in comparison with the circuit board of each comparative example in which an excess amount of the compound is distributed. It was found that the bonding strength with the copper circuit board was higher.
【００７４】上記各実施例のＡｌＮ回路基板において
は、ＡｌＮ基板表面に形成した酸化物層（α−Ａｌ2 Ｏ
3 皮膜）と銅回路板との接合強度を、上記ＹＡＧ，ＹＡ
Ｌ，ＹＡＭなどの液相成分が増強する効果が得られ、さ
らに上記液相成分により銅回路板との濡れ性が向上し、
未接合領域が減少し、ＡｌＮ基板と銅回路板との接合強
度が向上すると考えられる。In the AlN circuit board of each of the above embodiments, the oxide layer (α-Al 2 O) formed on the surface of the AlN substrate was used.
3 ) and the bonding strength between the copper circuit board and YAG, YA
The effect of enhancing liquid phase components such as L and YAM is obtained, and the liquid phase component improves wettability with a copper circuit board.
It is considered that the unbonded area is reduced, and the bonding strength between the AlN substrate and the copper circuit board is improved.
【００７５】すなわち、ＡｌＮ基板表面の酸化物層は、
通常はポーラス（多孔質）な状態で生成されており、結
晶サイズレベルで観察した場合には、銅回路板に対して
酸化物層が当接しない部分も生じている。しかしなが
ら、本実施例によれば、上記酸化物層が存在しない部分
には液相成分が分布することになり、この液相成分がＡ
ｌＮ基板と銅回路板との接合作用の一部を担うことにな
る。したがって、両部材間の未接合部分が減少し、さら
に液相成分の結合強度はＡｌＮ基板の酸化物層の膜強度
より強い。そのため、ＡｌＮ基板と銅回路板との接合強
度は、液相成分を分布させない従来構造と比較して、大
幅に向上するものと考えられる。That is, the oxide layer on the surface of the AlN substrate is
Usually, it is produced in a porous state, and when observed at the crystal size level, there are some portions where the oxide layer does not contact the copper circuit board. However, according to the present embodiment, the liquid phase component is distributed in the portion where the oxide layer does not exist, and this liquid phase component
It will play a part in the bonding operation between the 1N substrate and the copper circuit board. Therefore, the unjoined portion between the two members is reduced, and the bonding strength of the liquid phase component is stronger than the film strength of the oxide layer of the AlN substrate. Therefore, it is considered that the bonding strength between the AlN substrate and the copper circuit board is greatly improved as compared with the conventional structure in which the liquid phase component is not distributed.
【００７６】[0076]
【発明の効果】以上説明の通り、本発明に係るセラミッ
クス回路基板によれば、金属回路板に所定量の酸素が含
有されており、またさらに金属回路板表面に表面酸化層
が形成されているため、直接接合時に必要な共晶融体の
生成量を増加させることができ、またセラミックス基板
に対する共晶融体の濡れ性を高めることができる。した
がって、セラミックス基板と金属回路板との未接合部が
減少し、両部材の接合強度を高めることができる。As described above, according to the ceramic circuit board according to the present invention, the metal circuit board contains a predetermined amount of oxygen, and further, the surface oxide layer is formed on the surface of the metal circuit board. Therefore, the amount of eutectic melt required during direct bonding can be increased, and the wettability of the eutectic melt to the ceramic substrate can be increased. Therefore, the number of unjoined portions between the ceramic substrate and the metal circuit board is reduced, and the joining strength between the two members can be increased.
【図１】本発明に係るセラミックス回路基板の構成例を
示す断面図。FIG. 1 is a sectional view showing a configuration example of a ceramic circuit board according to the present invention.
【図２】本発明に係るセラミックス回路基板の他の構成
例を示す断面図。FIG. 2 is a sectional view showing another configuration example of the ceramic circuit board according to the present invention.
【図３】本発明に係るセラミックス回路基板のその他の
構成例を示す断面図。FIG. 3 is a sectional view showing another example of the configuration of the ceramic circuit board according to the present invention.
【図４】従来のセラミックス回路基板の構成例を示す断
面図。FIG. 4 is a sectional view showing a configuration example of a conventional ceramic circuit board.
【図５】従来のセラミックス回路基板の他の構成例を示
す断面図。FIG. 5 is a sectional view showing another configuration example of a conventional ceramic circuit board.
【図６】従来のセラミックス回路基板のその他の構成例
を示す断面図。FIG. 6 is a sectional view showing another example of the configuration of a conventional ceramic circuit board.
１，１ａ，１ｂ，１ｃ，１ｄ，１ｅ セラミックス回路
基板（Ａｌ2 Ｏ3 回路基板，ＡｌＮ回路基板，Ｓｉ3 Ｎ
4 回路基板） ２，２ａ，２ｂ セラミックス基板（Ａｌ2 Ｏ3 基板，
ＡｌＮ基板，Ｓｉ3 Ｎ4基板） ３ 酸化物層（Ａｌ2 Ｏ3 皮膜） ３ａ 酸化物層（ＳｉＯ2 皮膜） ４，４ａ 金属回路板（Ｃｕ回路板） ５，５ａ 金属板（裏銅板） ６ 半導体素子（チップ） ７ 表面酸化層（酸化銅層）1, 1a, 1b, 1c, 1d, 1e Ceramic circuit board (Al 2 O 3 circuit board, AlN circuit board, Si 3 N
4 circuit board) 2, 2a, 2b Ceramics substrate (Al 2 O 3 substrate,
AlN substrate, Si 3 N 4 substrate) 3 Oxide layer (Al 2 O 3 film) 3a Oxide layer (SiO 2 film) 4, 4a Metal circuit board (Cu circuit board) 5, 5a Metal board (back copper plate) 6 Semiconductor element (chip) 7 Surface oxide layer (copper oxide layer)
フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０５Ｋ 3/38 7511−4Ｅ Ｈ０５Ｋ 3/38 Ａ Continued on the front page (51) Int.Cl. 6 Identification code Agency reference number FI Technical display location H05K 3/38 7511-4E H05K 3/38 A
Claims (10)
側の表面に酸化物層を有するとともに内部に酸素を１０
０〜１０００ｐｐｍ含有する金属回路板が、前記セラミ
ックス基板に直接接合されていることを特徴とするセラ
ミックス回路基板。An oxide layer is formed on at least a surface of a bonding surface with a ceramic substrate.
A ceramic circuit board, wherein a metal circuit board containing 0 to 1000 ppm is directly bonded to the ceramic substrate.
１．０μｍ以上であることを特徴とする請求項１記載の
セラミックス回路基板。2. The ceramic circuit board according to claim 1, wherein the thickness of the oxide layer on the surface of the metal circuit board is 1.0 μm or more.
れることを特徴とする請求項１記載のセラミックス回路
基板。3. The ceramic circuit board according to claim 1, wherein the metal circuit board is made of tough pitch electrolytic copper.
Ｏ3 ）で構成されることを特徴とする請求項１記載のセ
ラミックス回路基板。4. The ceramic substrate is made of alumina (Al 2
2. The ceramic circuit board according to claim 1, wherein said ceramic circuit board is made of O 3 ).
（ＡｌＮ）で構成され、少なくとも金属回路板との接合
面側の表面に、厚さが０．５〜１０μｍの酸化物層を有
することを特徴とする請求項１記載のセラミックス回路
基板。5. The ceramic substrate according to claim 1, wherein the ceramic substrate is made of aluminum nitride (AlN) and has an oxide layer having a thickness of 0.5 to 10 μm on at least a surface on a bonding surface side with the metal circuit board. The ceramic circuit board according to claim 1.
3 Ｎ4 ）で構成され、少なくとも金属回路板との接合面
側の表面に、厚さが０．５〜１０μｍの酸化物層を有す
ることを特徴とする請求項１記載のセラミックス回路基
板。6. The ceramic substrate is made of silicon nitride (Si).
3 N 4) is constituted by a ceramic circuit board according to claim 1, wherein the at least on the surface of the bonding surface of the metal circuit plate, oxide layer having a thickness of 0.5 to 10 [mu] m.
板との接合面側の表面は粗面化加工されていることを特
徴とする請求項１記載のセラミックス回路基板。7. The ceramic circuit board according to claim 1, wherein at least a surface of the ceramic substrate on a bonding surface side with the metal circuit board is roughened.
合してなるセラミックス回路基板において、前記セラミ
ックス基板の接合面側の表面から深さ１００μｍまでの
断面領域についてＥＰＭＡ断面面分析した場合に、液相
成分となるイットリア（Ｙ2 Ｏ3 ）とアルミナ（Ａｌ2
Ｏ3 ）との化合物の分布割合が面積率換算で１０〜８０
％であることを特徴とするセラミックス回路基板。8. In a ceramic circuit board in which a metal circuit board is directly bonded to a ceramic substrate, when a cross-sectional area from the surface on the bonding surface side of the ceramic substrate to a depth of 100 μm is analyzed by EPMA, The components yttria (Y 2 O 3 ) and alumina (Al 2
The distribution ratio of the compound with O 3 ) is 10 to 80 in terms of area ratio.
% Of the ceramic circuit board.
（ＡｌＮ）基板であることを特徴とする請求項８記載の
セラミックス回路基板。9. The ceramic circuit board according to claim 8, wherein the ceramic substrate is an aluminum nitride (AlN) substrate.
との化合物が、ＹＡＧ，ＹＡＬ，ＹＡＭの少なくとも１
種であることを特徴する請求項８記載のセラミックス回
路基板。10. A compound of yttria and alumina, which is a liquid phase component, is at least one of YAG, YAL, and YAM.
9. The ceramic circuit board according to claim 8, which is a seed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9143918A JP3059117B2 (en) | 1996-05-31 | 1997-06-02 | Ceramic circuit board |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8-138788 | 1996-05-31 | ||
| JP13878896 | 1996-05-31 | ||
| JP9143918A JP3059117B2 (en) | 1996-05-31 | 1997-06-02 | Ceramic circuit board |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1075025A true JPH1075025A (en) | 1998-03-17 |
| JP3059117B2 JP3059117B2 (en) | 2000-07-04 |
Family
ID=26471750
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9143918A Expired - Fee Related JP3059117B2 (en) | 1996-05-31 | 1997-06-02 | Ceramic circuit board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3059117B2 (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001274534A (en) * | 2000-03-27 | 2001-10-05 | Toshiba Corp | Ceramics copper circuit board and method for manufacturing the same |
| JP2007008762A (en) * | 2005-06-30 | 2007-01-18 | Tdk Corp | Composite porous body |
| JP2007007995A (en) * | 2005-06-30 | 2007-01-18 | Tdk Corp | Composite porous body and method for producing the same |
| WO2013015355A1 (en) * | 2011-07-28 | 2013-01-31 | 株式会社東芝 | Method of manufacturing oxide ceramic circuit board, and oxide ceramic circuit board |
| CN109565939A (en) * | 2016-08-22 | 2019-04-02 | 株式会社村田制作所 | Ceramic substrate and module having built-in electronic parts |
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1997
- 1997-06-02 JP JP9143918A patent/JP3059117B2/en not_active Expired - Fee Related
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001274534A (en) * | 2000-03-27 | 2001-10-05 | Toshiba Corp | Ceramics copper circuit board and method for manufacturing the same |
| JP4557354B2 (en) * | 2000-03-27 | 2010-10-06 | 株式会社東芝 | Method for manufacturing ceramic copper circuit board |
| JP2007008762A (en) * | 2005-06-30 | 2007-01-18 | Tdk Corp | Composite porous body |
| JP2007007995A (en) * | 2005-06-30 | 2007-01-18 | Tdk Corp | Composite porous body and method for producing the same |
| JP4596154B2 (en) * | 2005-06-30 | 2010-12-08 | Ｔｄｋ株式会社 | Composite porous body and method for producing composite porous body |
| JPWO2013015355A1 (en) * | 2011-07-28 | 2015-02-23 | 株式会社東芝 | Oxide ceramic circuit board manufacturing method and oxide ceramic circuit board |
| WO2013015355A1 (en) * | 2011-07-28 | 2013-01-31 | 株式会社東芝 | Method of manufacturing oxide ceramic circuit board, and oxide ceramic circuit board |
| CN109565939A (en) * | 2016-08-22 | 2019-04-02 | 株式会社村田制作所 | Ceramic substrate and module having built-in electronic parts |
| US20190191562A1 (en) * | 2016-08-22 | 2019-06-20 | Murata Manufacturing Co., Ltd. | Ceramic substrate and electronic component-embedded module |
| US11246215B2 (en) | 2016-08-22 | 2022-02-08 | Murata Manufacturing Co., Ltd. | Ceramic substrate and electronic component-embedded module |
| CN109565939B (en) * | 2016-08-22 | 2022-04-05 | 株式会社村田制作所 | Ceramic substrate and electronic component built-in module |
| US11553592B2 (en) | 2016-08-22 | 2023-01-10 | Murata Manufacturing Co., Ltd. | Ceramic substrate and electronic component-embedded module |
| KR102212836B1 (en) * | 2020-05-19 | 2021-02-05 | 주식회사 코멧네트워크 | Method of manufacturing ceramic circuit board |
| WO2021235721A1 (en) * | 2020-05-19 | 2021-11-25 | 주식회사 코멧네트워크 | Method for manufacturing ceramic circuit board |
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|---|---|
| JP3059117B2 (en) | 2000-07-04 |
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