JPH1074798A - Method and structure for mounting semiconductor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method and structure for mounting semiconductor by which the workability of sealing resin injecting work can be improved by smoothly injecting the resin into the narrow clearance between a semiconductor chip and a wiring board. SOLUTION: In a semiconductor mounting method in which a semiconductor chip 10 is mounted on a wiring board 11 in a face-down state, the chip 10 is mounted on the semiconductor chip mounting part of the board 11 in a face- down state after an insulating inorganic filler 16 is supplied to the semiconductor chip mounting part. Then the clearance between the chip 10 and substrate 11 is filled up with a sealing resin 19 and the resin 19 is heated and cured.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor mounting method for mounting a semiconductor chip on a wiring board and a mounting structure thereof.

[0002]

2. Description of the Related Art A flip-chip mounting method has attracted attention because it can reduce the occupied area to the same size as the chip, can be made as thin as possible, and can be reduced in size and weight. In the flip-chip mounting method, a semiconductor chip is mounted face-down on a wiring board and mounted, and bumps of the semiconductor chip are directly connected to electrode pads of the wiring board. However, the semiconductor chip and the wiring board have different coefficients of thermal expansion. Due to the difference in the coefficient of thermal expansion, a thermal stress is generated in the connection part, and a crack may be generated in the connection part.

[0003] Therefore, by filling the gap between the semiconductor chip and the wiring board with a sealing resin having a low thermal expansion coefficient by mixing an inorganic filler, a connection is made due to the difference in the thermal expansion coefficient between the semiconductor chip and the wiring board. It has been practiced to reduce the thermal stress generated in the part.

Conventionally, a semiconductor mounting method for forming such a semiconductor mounting structure is to connect a semiconductor chip to a wiring board face down, apply a sealing resin to the periphery of the semiconductor chip, and use a resin utilizing a capillary phenomenon. It was common to do this by injection.

FIG. 9 shows a conventional mounting method of a semiconductor chip having solder bumps, 1 is a semiconductor chip, and 2 is a wiring board. A plurality of solder bumps 3 are formed on the lower surface of the semiconductor chip 1, and the solder bumps 3 are formed on the wiring board 2.
The electrode pad 4 is formed corresponding to.

[0006] As shown in FIG.
Face down, the solder bumps 3 are positioned on the electrode pads 4 of the wiring board 2, and as shown in FIG.
The semiconductor chip 1 is mounted on the wiring board 2, and the solder bumps 3 are melted by heating and connected to the electrode pads 4. If a mounting failure of the semiconductor chip 1 is detected at this stage, the semiconductor chip 1 can be replaced (repaired) with a new semiconductor chip 1.

Next, as shown in FIG. 1C, a sealing resin 5 made of a thermosetting resin such as a liquid epoxy resin is dispensed by a dispensing method using a syringe 5a.
Is applied to the wiring substrate 2 around the semiconductor chip 1, the sealing resin 5 passes through the space between the electrode pads 4 by capillary action.
Is filled in the gap (about 50 μm) between the substrate and the wiring board 2.

The sealing resin 5 such as epoxy resin used here has a thermal expansion coefficient (60 to 70 ppm / ° C.) of solder (27 ppm / ° C.) or gold (14 p.
pm / ° C), so that 40 to 7
By mixing about 0 wt% of an inorganic filler such as silica, the coefficient of thermal expansion in the operating temperature range is 20 to 4%.
It was reduced to about 0 ppm / ° C.

Next, when the sealing resin 5 is heated to about 120 to 160 ° C., the sealing between the semiconductor chip 1 and the wiring substrate 2 and the periphery of the semiconductor chip 1 is performed as shown in FIG. The resin 5 cures.

FIG. 10 shows a conventional mounting method of a semiconductor chip having gold bumps. The same components as those in FIG. A plurality of gold bumps 6 are formed on the lower surface of the semiconductor chip 1, and electrode pads 4 are formed on the wiring board 2 corresponding to the gold bumps 6.

As shown in FIG. 10A, first, an insulating adhesive 7 made of a thermosetting resin is supplied to a semiconductor chip mounting portion of the wiring board 2. Next, as shown in FIG. 2B, the semiconductor chip 1 is face down and the gold bumps 6 are formed.
Are positioned on the electrode pads 4 of the wiring board 2.

Next, as shown in FIG. 1C, the semiconductor chip 1 is pressed from the back side in the direction of arrow F, and the insulating adhesive 7 is pushed away by the semiconductor chip 1 and the gold bump 6 to remove the gold bump 6. It is brought into contact with the electrode pad 4. Next, when the insulating adhesive 7 is heated to about 120 to 160 ° C., the space between the semiconductor chip 1 and the wiring board 2 and the semiconductor chip 1
Is hardened.

FIG. 11 shows a conventional mounting method of a semiconductor chip having bump electrodes, and the same components as those in FIGS. 9 and 10 are denoted by the same reference numerals and description thereof is omitted. A plurality of projecting electrodes 8 such as gold and solder are formed on the lower surface of the semiconductor chip 1, and electrode pads 4 are formed on the wiring board 2 corresponding to the projecting electrodes 8.

As shown in FIG. 11A, a conductive adhesive 9 is transferred to the tip of the protruding electrode 8 of the semiconductor chip 1, the semiconductor chip 1 is face-down, and the protruding electrode 8 is connected to the electrode pad of the wiring board 2. 4 and then the conductive adhesive 9
Heat and connect. At this stage, the semiconductor chip 1
If a mounting failure is detected, a new semiconductor chip 1
Can be replaced (repaired).

Next, as shown in FIG. 1B, a sealing resin 5 made of a thermosetting resin such as a liquid epoxy resin is applied to the semiconductor chip 1 by a dispensing method using a syringe 5a.
Is applied to the wiring substrate 2 around the semiconductor chip 1, the sealing resin 5 passes through the space between the electrode pads 4 by capillary action.
Is filled in the gap (about 50 μm) between the substrate and the wiring board 2.

Next, when the sealing resin 5 is heated to about 120 to 160 ° C., the sealing between the semiconductor chip 1 and the wiring board 2 and the periphery of the semiconductor chip 1 is performed as shown in FIG. The resin 5 is cured.

FIG. 12 shows a conventional mounting method of a semiconductor chip having a protruding electrode. The same components as those in FIGS. 9 to 11 are denoted by the same reference numerals and description thereof is omitted. On the lower surface of the semiconductor chip 1, a plurality of projecting electrodes 8 such as gold and solder are formed.
The wiring board 2 has electrode pads 4 corresponding to the protruding electrodes 8.
Are formed.

As shown in FIG. 12A, a syringe 5a is first placed in a region of the wiring board 2 where the semiconductor chip 1 is to be mounted.
Is used to apply the insulating adhesive 7 by a dispensing method. Next, as shown in FIG. 2B, the conductive adhesive 9 is transferred to the tip of the protruding electrode 8 of the semiconductor chip 1, the semiconductor chip 1 is face-down, and the protruding electrode 8 is
Is positioned on the electrode pad 4.

Next, as shown in FIG. 1C, the semiconductor chip 1 is mounted on the wiring board 2 and the insulating adhesive 7 is pressed while pressing the protruding electrodes 8 of the semiconductor chip 1 against the electrode pads 4. Is heated to about 150 to 160 ° C., the insulating adhesive 7 and the conductive adhesive 9 are simultaneously cured.

[0020]

However, according to the mounting method shown in FIG. 9, the sealing resin 5 is injected into the small gap between the semiconductor chip 1 and the wiring board 2 by utilizing the capillary phenomenon. Although the viscosity of the sealing resin 5 is increased by increasing the content of the inorganic filler, it is necessary to reduce the viscosity of the sealing resin 5 in the gap between the semiconductor chip 1 and the wiring board 2. The injection property of No. 5 becomes worse.

For this reason, the shape and size of the inorganic filler are optimized, and the viscosity of the sealing resin 5 is increased by heating the syringe 5a used for applying the wiring substrate 2 and the sealing resin 5 to 40 to 90 ° C. However, there is a problem that the resin injection time is long and the workability is poor.

The gap between the semiconductor chip 1 and the wiring board 2 is as small as about 30 to 60 μm. When the solder bumps 3 arranged around the semiconductor chip 1 are formed at a pitch of 100 μm or less, the adjacent solder bumps 3 Gap of 30
μm or less, the sealing resin 5 flows along the solder bumps 3 around the semiconductor chip 1 before the sealing resin 5 fills the center of the semiconductor chip 1 through the gap. By creating a void in the center of 1
There is also a problem that reliability is reduced.

In the mounting method shown in FIG. 10, the semiconductor chip 1 is firmly bonded to the wiring board 2 by using a thermosetting insulating adhesive 7 such as an epoxy resin. In the case where the semiconductor chip 1 is found to be defective or the connection is defective, it has been difficult to remove the semiconductor chip 1 and replace it with a new semiconductor chip 1 (repair).

For this reason, the protruding electrodes are connected to the electrode pads of the wiring board by using, for example, a conductive adhesive in which silver powder is mixed in an epoxy resin. If it is found, a method is employed in which after repairing, a gap between the semiconductor chip 1 and the wiring board 2 is filled with an insulating resin by utilizing a capillary phenomenon and sealed. However, a narrow gap (about 30 to 60 μm) between the semiconductor chip 1 and the wiring board 2 has to be filled with an insulating resin having a high viscosity by utilizing a capillary phenomenon, and there is a problem that workability is poor.

In the mounting method shown in FIG. 11, a slight gap (about 30 to 60 μm) between the semiconductor chip 1 and the wiring board 2 is used.
Although the viscosity of the sealing resin 5 needs to be reduced as much as possible, the sealing resin 5
Inorganic filler (particle size: about 1 to 12 μm) which is a solid component mainly for the purpose of lowering the coefficient of thermal expansion
Content: about 40-70 wt%)
There is a limit in reducing the viscosity of the sealing resin 5, and there is a problem that the injection property of the sealing resin 5 into the gap between the semiconductor chip 1 and the wiring board 2 is poor.

Further, according to the mounting method of FIG. 12, when the semiconductor chip 1 is mounted on the wiring board 2, the insulating adhesive 7 applied to the wiring board 2 is applied to the bump electrodes 8 formed around the semiconductor chip 1. When pushed out, there is a problem that the conductive adhesive 9 attached to the tip of the protruding electrode 8 is washed away together with the insulating adhesive 7.

The present invention has been made in view of the above circumstances, and a first object of the present invention is to improve the injection property of a sealing resin without leaving a void in a slight gap between a semiconductor chip and a wiring board. Another object of the present invention is to provide a semiconductor mounting method and a mounting structure corresponding to a narrow connection pitch capable of improving mounting workability.

A second object of the present invention is to provide a semiconductor mounting method and a mounting structure thereof, in which a semiconductor chip can be easily mounted on a wiring board, repair can be easily performed, and reliability can be improved. .

[0029]

In order to achieve the above object, the present invention provides a semiconductor mounting method for mounting a semiconductor chip face down on a wiring board.
Supplying an insulating inorganic filler to the semiconductor chip mounting site on the wiring board, and mounting the semiconductor chip face down on the semiconductor chip mounting site where the inorganic filler is supplied on the wiring board; A semiconductor mounting method, comprising: a step of filling a gap between a mounted semiconductor chip and the wiring board with a sealing resin; and a step of heating and curing the filled sealing resin.

A second aspect of the present invention is characterized in that, in the first aspect, a sealing resin containing a coupling agent that binds to an inorganic filler is contained in a component. Claim 3
In the first aspect, the step of heating and curing the sealing resin is characterized in that the wiring resin is turned over, the semiconductor chip is placed below the wiring substrate, and then the sealing resin is heated and cured.

According to a fourth aspect of the present invention, in the first aspect, the wiring board is formed with a concave portion for storing an inorganic filler in a semiconductor chip mounting portion. 6. A semiconductor mounting method for mounting a semiconductor chip having a protruding electrode face down on a wiring board having an electrode pad, wherein the semiconductor chip of the wiring board has a device surface excluding a protruding electrode on a protruding electrode forming surface of the semiconductor chip. A first step of supplying an insulative adhesive exhibiting thermoplasticity to at least one of the chip mounting parts, and applying the semiconductor chip to the semiconductor chip mounting part on the wiring board based on the supply of the insulative adhesive. A second step of mounting the semiconductor chip face-down, and pressing the projecting electrode against the electrode pad by applying pressure while heating with a bonding head from the back side of the semiconductor chip where the projecting electrode is not formed; A third step of being pushed into the wiring board; and the insulating bonding interposed between the semiconductor chip and the wiring board. Semiconductor mounting method characterized by comprising a fourth step of curing the.

In a sixth aspect of the present invention, in the third step, the wiring board having at least the surface having the electrode pads formed of the glass epoxy resin layer is pressurized while being heated at a temperature equal to or higher than the glass transition point. A projection electrode is pressed against the electrode pad, and the electrode pad is pressed into the wiring board.

According to a seventh aspect of the present invention, in the first step, the first step comprises applying a film-like or paste-like insulating adhesive to the element surface of the semiconductor chip except for the protruding electrodes on the protruding electrode forming surface and the semiconductor of the wiring board. After supplying to at least one of the chip mounting portions, a step of volatilizing a solvent present in the insulating adhesive is provided.

In a semiconductor mounting structure for mounting a semiconductor chip having a protruding electrode face down on a wiring board having an electrode pad, the semiconductor chip is connected to the electrode pad via the protruding electrode. In a state where the connection surface of the electrode pad is pressed down below the plate surface of the wiring board, the element surface of the semiconductor chip and the semiconductor chip mounting surface of the wiring substrate are sealed with an insulating adhesive exhibiting thermoplasticity. It is characterized by being.

According to a ninth aspect, in the eighth aspect, the electrical connection portion between the semiconductor chip and the wiring board is made of a metal material having a melting point higher than the highest heating temperature during the step of mounting the semiconductor chip on the wiring board. It is characterized by becoming.

According to a tenth aspect, in the semiconductor mounting structure in which the semiconductor chip is mounted face down on the wiring board,
A wiring board having a groove connecting a part of the wiring board covered by the semiconductor chip and an outside of the covered part; a semiconductor chip mounted on a semiconductor chip mounting part of the wiring board; And an insulating resin that fills the semiconductor chip mounting site via the substrate and seals the space between the semiconductor chip and the wiring board.

According to another aspect of the present invention, there is provided a semiconductor mounting method for mounting a semiconductor chip on a wiring board face-down, comprising a concave groove connecting a portion of the wiring board covered by the semiconductor chip and an outside of the covered portion. After the semiconductor chip is mounted face-down on the semiconductor chip mounting portion of the wiring board, an insulating resin is supplied from outside the semiconductor chip mounting portion of the concave groove, and the semiconductor chip is connected to the semiconductor chip via the concave groove. An insulating resin is supplied between the wiring board and the semiconductor chip to seal the semiconductor chip and the wiring board.

According to a twelfth aspect of the present invention, in the semiconductor mounting method for mounting a semiconductor chip having a projecting electrode face down on a wiring board, a step of attaching a conductive adhesive to at least a tip of the projecting electrode of the semiconductor chip; A step of supplying an insulating resin to a region of the semiconductor chip where the protruding electrodes are not present; and a step of applying the protruding electrodes to the electrode pads of the wiring board face down with the semiconductor chip supplied with the conductive adhesive and the insulating resin. After the positioning, the method includes a step of mounting the semiconductor chip on a wiring board, and a step of heating and curing the conductive adhesive and the insulating resin based on the mounting of the semiconductor chip on the wiring board. I do.

According to a thirteenth aspect, in the twelfth aspect, the step of attaching a conductive adhesive to at least the tip of the protruding electrode of the semiconductor chip is performed after the insulating resin is supplied to a region of the semiconductor chip where no protruding electrode exists. Heating the insulating resin to lower the viscosity of the insulating resin, and diffusing the insulating resin throughout the semiconductor chip except for the protruding electrodes.

[0040]

Embodiments of the present invention will be described below with reference to the drawings. 1A and 1B show a first embodiment of FIGS. 1 and 2, FIG. 1 shows a semiconductor mounting process, and FIG. 2 shows a semiconductor mounting structure.

The semiconductor mounting method will be described with reference to FIG. In the figure, 10 is a semiconductor chip, and 11 is a wiring board. Solder bumps 13 are provided on the semiconductor chip 10, and electrode pads 14 are formed on the wiring board 11 corresponding to the arrangement of the solder bumps 13.

Reference numeral 15 denotes a jig for supplying an inorganic filler 16 for supplying a gap between the semiconductor chip 10 and the wiring board 11.
A gate 18 is provided at the lower end opening of the inverted funnel-shaped storage unit 17.

First, as shown in FIG. 1A, a semiconductor chip 10 and a wiring board 11 are stored in a storage portion 17 of a supply jig 15.
An opening at the lower end of the supply jig 15 in which an appropriate amount of the inorganic filler 16 necessary for supply to the gap is stored is positioned at a semiconductor chip mounting portion of the wiring board 11 (a region surrounded by the electrode pads 14).

Next, as shown in FIG. 2B, when the gate 18 of the supply jig 15 is opened, the inorganic filler 16 is supplied to the semiconductor chip mounting portion of the wiring board 11. Then, as shown in FIG. 3C, the inorganic filler 16 spreads substantially uniformly over the entire semiconductor chip mounting portion of the wiring board 11.

Here, for example, silica (SiO 2) is used as the inorganic filler 16, but other inorganic fillers may be used. A coupling agent that binds to the surface of the inorganic filler 16 and the resin component is added to the resin in advance, or the inorganic filler 16 is treated to form a coupling agent, so that the inorganic filler 16 and the resin component are wetted. And the voids at the interface between the inorganic filler and the resin are reduced. Further, by adding a coupling agent, for example, the glass transition temperature (for example, Tg = 140 ° C.) of the cured resin shifts to a higher temperature side.
The operating temperature range is widened, and the mechanical properties such as the elastic modulus are improved, so that the reliability is increased.

Next, as shown in FIG. 2D, the semiconductor chip 10 is face down, the solder bumps 13 are positioned on the electrode pads 14 of the wiring board 11, and
1, the semiconductor chip 10 is mounted, and the solder bumps 13 are melted by heating and connected to the electrode pads 14. In addition,
At this stage, if a mounting failure of the semiconductor chip 10 is detected, the semiconductor chip 10 can be replaced (repaired) with a new semiconductor chip 10. Further, it is also possible to connect the electrodes of the semiconductor chip 10 and the wiring board 11 by applying a conductive adhesive to, for example, gold bumps without interposing the solder bumps 13 on the semiconductor chip 10 and the wiring board 11.

Next, as shown in FIG. 2E, a sealing resin 19 made of a thermosetting resin such as a liquid epoxy resin is applied to the wiring substrate 11 around the semiconductor chip 10 by a dispensing method. The stopper resin 19 fills the gap (about 50 μm) between the semiconductor chip 10 and the wiring board 11 through the space between the electrode pads 14 by a capillary phenomenon. Then, as shown in FIG. 3F, the sealing resin 19 is filled in the upper layer of the inorganic filler 16 supplied in advance. here,
The ratio of the inorganic filler 16 to the sealing resin 19 is set to 0.1.
It is 7 to 2.5 times (wt).

Next, as shown in FIG. 2G, when the wiring board 11 is inverted, the semiconductor chip 10 is located below the wiring board 11. Then, the sealing resin 19 is set to 50 to 80.
By heating to about ° C. to lower the viscosity of the sealing resin 19, the inorganic filler 16 starts to settle by its own weight,
The inorganic filler 16 is dispersed in the sealing resin 19. Further, when the sealing resin 19 is heated to about 150 °, the space between the semiconductor chip 10 and the wiring substrate 11 and the semiconductor chip 1 are reduced.
The hardening resin 19 around the periphery of the hard disk is hardened, and a semiconductor mounting structure as shown in FIG. 2 is obtained.

As described above, according to the first embodiment, the inorganic filler 16 is supplied to the gap between the semiconductor chip 10 and the wiring board 11 in advance, and then the semiconductor chip 10 and the wiring board 1
By injecting the sealing resin 19 into the gap between the semiconductor chip 1 and the sealing resin 19, there is no need to include a large amount of the inorganic filler 16, and the viscosity of the sealing resin 19 does not increase. It can be smoothly injected into a narrow gap between the wiring board 10 and the wiring board 11, and the workability can be improved.

FIG. 3 shows a second embodiment. The same components as those in the first embodiment are denoted by the same reference numerals and description thereof is omitted. A concave portion 11a for storing the inorganic filler 16 is formed in the semiconductor chip mounting portion (the region surrounded by the electrode pad 14) of the wiring board 11 of the present embodiment. Reference numeral 20 denotes a suction head for the inorganic filler 16 to be supplied to the gap between the semiconductor chip 10 and the wiring board 11, provided with a concave portion 21 which opens downward, and the concave portion 21 has a mesh finer than the inorganic filler 16 in particle size. Net 22
Is stretched. The suction head 20 is connected to a vacuum suction source (not shown), and the concave portion 21 is evacuated so that the inorganic filler 16 is suction-held by the mesh body 22.

First, as shown in FIG. 3A, an appropriate amount of inorganic filler necessary for supplying the mesh 22 with a gap between the semiconductor chip 10 and the wiring board 11 by evacuating the concave portion 21 of the suction head 20. 16 is held by suction, and the lower end opening of the suction head 20 is positioned in the concave portion 11 a of the wiring board 11.

Next, as shown in FIG. 5B, when the vacuum suction of the suction head 20 is released, the depression 21 becomes atmospheric pressure, and the inorganic filler 16 adsorbed by the net 22 is removed from the wiring board 11. It is supplied to the recess 11a. Then, the inorganic filler 16 spreads substantially uniformly over the entire recess 11 a of the wiring board 11.

Next, as shown in FIG. 3C, the semiconductor chip 10 is face down, the solder bumps 13 are positioned on the electrode pads 14 of the wiring board 11, and
1, the semiconductor chip 10 is mounted, and the solder bumps 13 are melted by heating and connected to the electrode pads 14. In addition,
At this stage, if a mounting failure of the semiconductor chip 10 is detected, the semiconductor chip 10 can be replaced (repaired) with a new semiconductor chip 10. It is also possible to apply a conductive adhesive directly to the semiconductor chip 10 and the wiring board 11 without the intervention of the solder bumps 13 to connect the electrodes of the semiconductor chip 10 and the wiring board 11 to each other.

Next, as shown in FIG. 2D, when a sealing resin 19 made of a thermosetting resin such as a liquid epoxy resin is applied to the wiring substrate 11 around the semiconductor chip 10 by a dispensing method, the sealing is performed. The sealing resin 19 passes between the electrode pads 14 and fills the gap between the semiconductor chip 10 and the wiring board 11 and the concave portion 11a by capillary action. Then, the sealing resin 19 is filled in the upper layer of the inorganic filler 16 supplied in advance.

Next, as shown in FIG. 5E, when the wiring board 11 is turned over, the semiconductor chip 10 is located below the wiring board 11. Then, the sealing resin 19 is set to 50 to 80.
By heating to about ° C. to lower the viscosity of the sealing resin 19, the inorganic filler 16 starts to settle by its own weight,
The inorganic filler 16 is dispersed in the sealing resin 19. Further, when the sealing resin 19 is heated to about 150 ° C., the space between the semiconductor chip 10 and the wiring board 11 and the semiconductor chip 1 are reduced.
The sealing resin 19 around 0 is cured, and a semiconductor mounting structure is obtained.

As described above, according to the second embodiment, by providing the concave portion 11a in the wiring substrate 11, the gap between the semiconductor chip 10 and the wiring substrate 11 is increased, and the sealing resin 19 utilizing the capillary phenomenon is formed. Injectability can be improved. Further, the inorganic filler 16 is accommodated in the concave portion 11a,
The connection failure caused by the inorganic filler 16 covering the peripheral electrode pads 14 can be prevented, and the semiconductor chip 10
Can be reliably connected to the wiring board 11, and the reliability can be improved.

FIG. 4 shows a third embodiment, in which the same components as those in the first and second embodiments are denoted by the same reference numerals and description thereof is omitted. A plurality of gold bumps 23 having a height of about 50 μm are formed as projecting electrodes on the lower surface of the semiconductor chip 10, and electrode pads 14 are formed on the wiring board 11 corresponding to the gold bumps 23. At least the upper layer of the wiring board 11 on which the semiconductor chip 10 is mounted is a glass epoxy resin layer, and the glass transition point temperature is 140 ° C.

As shown in FIG. 4A, first, an insulating adhesive 25 made of a thermoplastic resin is supplied to a semiconductor chip mounting portion of the wiring board 11 using a syringe (not shown). Next, the semiconductor chip 10 is face down,
The gold bumps 23 are positioned on the electrode pads 14 of the wiring board 11.

Next, as shown in FIG. 3B, the semiconductor chip 10 is pressed from the back side in the direction of arrow F by the bonding head 24, and the insulating adhesive 25 is pushed away by the semiconductor chip 10 and the gold bumps 23. Gold bump 2
3 is brought into contact with the electrode pad 14.

Further, when the semiconductor chip 10 is pressurized while being heated to 180 ° C. to 250 ° C. by the bonding head 24, the electrode pads 14 are pushed into the insulating resin layer of the wiring board 11, and the upper surface of the electrode pads 14
Of the semiconductor chip 10 and the semiconductor chip mounting portion of the wiring board 11
5 is sealed. Here, the wiring board 11
Has a thickness of about 1 to 2 mm, and the pushing amount of the electrode pad 14 is about 10 to 20 μm.

After that, the semiconductor chip 10 is connected to the wiring board 11.
When the insulating adhesive 25 is cooled under pressure, the electrode pads 14 are cured while being pressed into the wiring board 11, and the mounting is completed.

According to the present embodiment, the semiconductor chip 10 can be face-down, the gold bumps 23 can be connected to the electrode pads 14 of the wiring board 11, and the electrode pads 14 are pushed into the wiring board 11. High strength and improved reliability.

If the semiconductor chip 10 is found to be defective after mounting, the semiconductor chip 10 is heated even after sealing, so that the thermoplastic insulating adhesive 25 is softened and It can be peeled and repaired.

FIGS. 5 and 6 show a fourth embodiment.
The same components as those of the first to third embodiments are denoted by the same reference numerals, and description thereof is omitted. As shown in FIG. 5, a concave groove 11b is provided on the wiring board 11 of the present embodiment. The concave groove 11b extends between the semiconductor chip mounting portion and the electrode pads 14 outside the semiconductor chip mounting portion to the outside of the arrangement of the electrode pads 14.

Next, a mounting method for mounting the semiconductor chip 10 on the wiring board 11 will be described. As shown in FIG. 6A, the semiconductor chip 10 is face down and the solder bumps 13 are connected to the electrode pads of the wiring board 11. After positioning at 14, the solder bumps 13 are mounted on the electrode pads 14, and the solder bumps 13 are heated and connected to the electrode pads 14. If a mounting failure of the semiconductor chip 10 is detected at this stage, the semiconductor chip 10 can be replaced (repaired) with a new semiconductor chip 10.

Next, as shown in FIG. 6B, a sealing resin 19 made of a thermosetting resin such as a liquid epoxy resin is dispensed by a dispensing method into a concave groove 11 b extending outside the arrangement of the electrode pads 14. When applied, the sealing resin 19 flows along the concave groove 11b by capillary action, and the semiconductor chip 1
0 and the space between the wiring board 11 is filled. In this case, since the gap between the semiconductor chip 10 and the wiring board 11 is large due to the concave groove 11b, the sealing resin 19 flows smoothly, and the injection property can be improved.

Next, when the sealing resin 19 is heated to about 120 to 160 ° C., as shown in FIG.
Is hardened. Therefore, no void remains between the semiconductor chip 10 and the wiring board 11, the sealing can be completed completely, and the connection reliability is improved.

As shown in FIG. 7, the shape of the concave groove 11b provided in the wiring board 11 is formed as a tapered surface 11c which expands upward, so that the sealing resin 19 spreads more smoothly.

In this embodiment, the wiring board 1
Although one groove 11b is provided in one, a plurality of grooves 11b may be provided toward the semiconductor chip mounting portion (FIG. 7).
(A)). In addition, the flow of the sealing resin 19 is further smoothed by providing a downward slope toward the semiconductor chip mounting portion (FIG. 7B. The concave groove 11b is gradually formed toward the semiconductor chip mounting portion). A shape having a taper with a large width may be used (FIG. 7A).

FIG. 8 shows a fifth embodiment.
The same components as those of the first embodiment are denoted by the same reference numerals, and description thereof is omitted. A mounting method for mounting the semiconductor chip 10 on the wiring board 11 will be described with reference to FIG. 7. As shown in FIG. 7A, the semiconductor chip 10 of the present embodiment has a plurality of bump electrodes 26 such as gold and solder. Are formed.

As shown in FIG. 7B, a conductive adhesive 27 is attached to the tip of the protruding electrode 26 by a transfer method or a dispense method. Next, as shown in FIG.
First, an insulating resin 28 made of a thermosetting resin is applied by a dispensing method to a region of the semiconductor chip 10 where the protruding electrodes 26 are not present by a syringe 28a.

Next, when the semiconductor chip 10 is heated at a temperature of 100 ° C. or less within several tens of seconds, the viscosity of the insulating resin 27 decreases, and as shown in FIG. Except for the above, it diffuses to the entire area of the semiconductor chip 10 to the outside of the protruding electrode 26 of the semiconductor chip 10, but does not flow out to the surroundings due to surface tension. The insulating resin 28
The semiconductor chip 10 may be rotated and centrifugal force may be used when spreading the entire area of the semiconductor chip 10 to the outside of the protruding electrode 26 of the semiconductor chip 10.

Next, as shown in FIG. 7E, the semiconductor chip 10 is face down, and the protruding electrodes 26 are positioned on the electrode pads 14 of the wiring board 11. Next, as shown in FIG.
When the protruding electrode 26 of the semiconductor chip 10 is pressed against the electrode pad 14, the protruding electrode 26 is crushed and electrically connected to the electrode pad 14, and the insulating resin 28 is Adhere to Thereafter, when the insulating resin 28 is heated to about 120 to 160 ° C., the insulating resin 28 and the conductive adhesive 27 are simultaneously cured.

As in the present embodiment, in a state where the insulating resin 28 applied to the semiconductor chip 10 is extended to the outside of the protruding electrodes 26 formed around the semiconductor chip 10,
After connecting the semiconductor chip 10 to the wiring board 11 face down, the insulating resin 28 is cured together with the conductive adhesive 27 so that the semiconductor chip 10 and the wiring board 11 are hardened.
There is no void between them, and it can be mounted reliably and reliability can be improved.

[0075]

According to the present invention, an inorganic filler is supplied in advance to the gap between the semiconductor chip and the wiring board, and then the sealing resin is injected into the gap between the semiconductor chip and the wiring board. This eliminates the need for the sealing resin to contain a large amount of inorganic filler, and does not increase the viscosity of the sealing resin. Improvement can be achieved.

According to the fifth to tenth aspects, since the electrode pads are pushed into the wiring board, breakage of the bump connection portion due to warpage or elongation of the board is prevented. If the semiconductor chip is found to be defective after mounting, the thermoplastic insulating adhesive is softened by heating even after the semiconductor chip is sealed, and can be repaired by being peeled off from the wiring board.

According to the present invention, since the sealing resin smoothly flows along the concave groove provided in the wiring board, voids are formed in the sealing resin filled in the gap between the semiconductor chip and the wiring board. It does not remain, can be completely sealed, and can improve reliability.

[Brief description of the drawings]

FIG. 1 is a process chart of a semiconductor mounting method according to a first embodiment of the present invention.

FIG. 2 is a vertical side view showing the semiconductor mounting structure of the embodiment.

FIG. 3 is a process diagram of a semiconductor mounting method according to a second embodiment of the present invention.

FIG. 4 is a process chart of a semiconductor mounting method according to a third embodiment of the present invention.

FIG. 5 is a perspective view of a wiring board according to a fourth embodiment of the present invention.

FIG. 6 is a process chart of the semiconductor mounting method according to the embodiment;

FIG. 7 is a vertical sectional side view showing a semiconductor mounting structure showing a modification of the embodiment.

FIG. 8 is a process chart of a semiconductor mounting method according to a fifth embodiment of the present invention.

FIG. 9 is a process chart showing a first example of a conventional semiconductor mounting method.

FIG. 10 is a process chart showing a second example of a conventional semiconductor mounting method.

FIG. 11 is a process chart showing a third example of a conventional semiconductor mounting method.

FIG. 12 is a process chart showing a fourth example of a conventional semiconductor mounting method.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 ... Semiconductor chip 11 ... Wiring board 13 ... Solder bump 14 ... Electrode pad 16 ... Inorganic filler 19 ... Sealing resin 23 ... Gold bump 25 ... Insulating adhesive 26 ... Protruding electrode 27 ... Conductive adhesive

Claims (13)

[Claims] 1. A semiconductor mounting method for mounting a semiconductor chip on a wiring board face down, comprising: supplying an insulating inorganic filler to a semiconductor chip mounting portion on the wiring board; Mounting the semiconductor chip face down on the semiconductor chip mounting site to which the semiconductor chip is supplied; filling the gap between the mounted semiconductor chip and the wiring board with a sealing resin; and filling the sealing resin. And a step of heating and curing the semiconductor device. 2. The semiconductor mounting method according to claim 1, wherein a sealing resin containing a coupling agent that binds to an inorganic filler in the components is filled. 3. The step of heating and curing the sealing resin, wherein the wiring substrate is turned over so that the semiconductor chip is located below the wiring substrate, and then the sealing resin is heated and cured. The semiconductor mounting method described in the above. 4. The semiconductor mounting method according to claim 1, wherein the wiring board has a concave portion for storing an inorganic filler in a semiconductor chip mounting portion. 5. A semiconductor mounting method for mounting a semiconductor chip having a protruding electrode face down on a wiring board having an electrode pad, wherein: First to supply an insulating adhesive exhibiting thermoplasticity to at least one of the chip mounting portions
A second step of mounting the semiconductor chip face down on a semiconductor chip mounting portion on the wiring board based on the supply of the insulating adhesive; and forming a protruding electrode of the semiconductor chip. A third step of pressing the protruding electrode against the electrode pad by applying pressure while heating with a bonding head from the back side not being pressed, and forcing the electrode pad into the wiring board; and And a fourth step of curing the insulating adhesive interposed therebetween. 6. The third step is to press a projecting electrode against the electrode pad by heating and pressing a wiring substrate having at least a surface having an electrode pad formed of a glass epoxy resin layer at a temperature equal to or higher than a glass transition point. 6. The semiconductor mounting method according to claim 5, wherein said electrode pad is pushed into said wiring board. 7. The semiconductor mounting method according to claim 5, wherein the first step comprises applying a film-like or paste-like insulating adhesive to the element surface of the semiconductor chip excluding the projecting electrodes on the projecting electrode forming surface and the wiring board. A semiconductor mounting method, comprising a step of volatilizing a solvent present in the insulating adhesive after supplying to at least one of the semiconductor chip mounting portions. 8. A semiconductor mounting structure for mounting a semiconductor chip having a protruding electrode face down on a wiring board having an electrode pad, wherein said semiconductor chip is connected to said electrode pad via said protruding electrode, and said electrode is connected to said semiconductor chip. With the connection surface of the pad pressed down below the plate surface of the wiring board, the element surface of the semiconductor chip and the semiconductor chip mounting surface of the wiring substrate are sealed with a thermoplastic insulating adhesive. Characteristic semiconductor mounting structure. 9. The semiconductor mounting structure according to claim 8, wherein the electrical connection between the semiconductor chip and the wiring board has a melting point higher than the highest heating temperature during the step of mounting the semiconductor chip on the wiring board. A semiconductor mounting structure comprising a material. 10. In a semiconductor mounting structure in which a semiconductor chip is mounted face down on a wiring board, a wiring having a concave groove connecting a part of the wiring board covered by the semiconductor chip and an outside of the covered part. A substrate, a semiconductor chip mounted on the semiconductor chip mounting portion of the wiring substrate, and an insulating resin filled in the semiconductor chip mounting portion via the concave groove and sealing between the semiconductor chip and the wiring substrate. A semiconductor mounting structure comprising: 11. A semiconductor mounting method for mounting a semiconductor chip on a wiring board face-down, wherein the wiring board has a concave groove connecting a portion of the wiring board covered by the semiconductor chip and an outside of the covered portion. After the semiconductor chip is mounted face-down on the semiconductor chip mounting portion, an insulating resin is supplied from outside the semiconductor chip mounting portion of the concave groove, and the semiconductor chip and the wiring board are supplied through the concave groove. And supplying an insulating resin between the semiconductor chip and the semiconductor chip to seal the semiconductor chip and the wiring substrate. 12. A semiconductor mounting method for mounting a semiconductor chip having a protruding electrode face down on a wiring board, wherein a step of attaching a conductive adhesive to at least a tip of the protruding electrode of the semiconductor chip; A step of supplying an insulating resin to a region where the projecting electrode is not present; and a step of positioning the projecting electrode on an electrode pad of the wiring board face down with the semiconductor chip supplied with the conductive adhesive and the insulating resin. Mounting the semiconductor chip on a wiring board; and heating and curing the conductive adhesive and the insulating resin based on the mounting of the semiconductor chip on the wiring board. Method. 13. The semiconductor mounting method according to claim 12, wherein the step of attaching a conductive adhesive to at least the tip of the protruding electrode of the semiconductor chip includes supplying an insulating resin to a region of the semiconductor chip where no protruding electrode is present. And then heating to reduce the viscosity of the insulating resin and diffuse the insulating resin throughout the semiconductor chip except for the protruding electrodes.