JPH1056165A - Semiconductor device for ccd and its manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make a device thinner or smaller by connecting a lead wiring to an electrode of a CCD semiconductor chip with a conductive bond, and sealing a semiconductor chip and a lead wiring so that a part of the lead wiring is exposed to the outside as an outside lead-out part of the lead wiring. SOLUTION: One end of each lead wiring 13 is, through a conductive bond 16, connected to an electrode 11c of a CCD semiconductor chip 11. The CCD semiconductor chip 11 and the lead wiring 13 are so sealed with a potting resin 17 as a part of each lead wiring 13 is exposed outside as an outside lead- out part 13a of each lead wiring 13. Relating to such form of CCD semiconductor device as this, the lead wiring 13 is directly connected to the electrode 11a of the CCD semiconductor chip 11 with the conductive bond 16, so, the device itself can be thinner and smaller. In addition, following it, thinner and smaller size is possible at implementation.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor device for a CCD such as a CCD linear image sensor and a method for manufacturing the same.

[0002]

2. Description of the Related Art Conventionally, CCD semiconductor devices for surface mounting are mainly of the type such as SOP.
2. Description of the Related Art As an envelope of a semiconductor device for electronic devices, a package in which a ceramic package on which a semiconductor chip for CCD is mounted is hermetically sealed with a lid made of optical glass is conventionally known.

FIG. 8 is a structural view showing an example of a conventional SOP type CCD semiconductor device.

This CCD semiconductor device comprises a base ceramic 101 on which a CCD semiconductor chip 100 is mounted,
There is provided a ceramic package having a window ceramic 102 provided thereabove and a lead frame 103 provided therebetween.

The CCD semiconductor chip 100 has a CCD sensor section 100b and electrodes 100c formed on the main surface side of a semiconductor substrate 100a.
The electrode 100c and the lead frame 103 are connected via a bonding wire 104.

[0006] Then, an optical glass 105 is sealed to the window ceramic 102, and a lead frame 103 is formed.
The semiconductor chip 100 for CCD connected to the above is hermetically sealed.

The optical glass 105 is formed as a lid with a low-melting glass with a frame-like low-melting glass 106 attached thereto for sealing with the main body package. The ceramic 101 and the wind ceramic 102 are adhered to each other by the low-melting glass 107.

According to the CCD semiconductor device, an optical signal input through the optical glass 105 is converted into an electric signal by the CCD sensor unit 100b, and is converted into an electric signal through the electrode 100c and the bonding wire 104.
Is taken out from the outside.

Next, a method for manufacturing the above-described CCD semiconductor device will be described.

First, a ceramic package is prepared as a main body package. This ceramic package
A base ceramic 101, a wind ceramic 102 and a lead frame 103 are provided.
The wind ceramic 102 is assembled on the upper part of the first ceramics 01. A lead frame 103 is provided between the base ceramic 101 and the wind ceramic 102, and the lead frame 103 is closely adhered to by a low-melting glass 107.

Next, in order to perform die bonding, a conductive die bond paste is applied on the die pad portion of the base ceramic 101, and the CCD semiconductor chip 100 is pressed and temporarily fixed thereto, and then heated to cure the paste and adhere. I do.

Subsequently, in order to perform wire bonding,
Ceramic package lead frame 103 and CCD
The electrode 100c of the semiconductor chip 100 is connected by a bonding wire 104.

After that, the ceramic package is
The optical glass 105 provided with the low-melting glass 106 is capped and passed through a sealing furnace to seal the optical glass 105 to the ceramic package with the frame of the low-melting glass 106. After the CCD semiconductor chip 100 in the ceramic package is hermetically sealed in this way, if the lead frame 103 is cut and bent, a CCD semiconductor device having the structure shown in FIG. 8 can be obtained. it can.

[0014]

However, in the above-mentioned conventional CCD semiconductor device, the bonding wire 10
In this case, it is necessary to consider the securing of the loop length and the dimensions of the outer lead frame 103, and there is a problem that the thickness of the device itself limits the thinning and miniaturization of the mounting.

The present invention has been made to solve the above-mentioned conventional problems, and an object of the present invention is to provide a CCD semiconductor device capable of reducing the thickness and size of the device itself. is there. Another object of the present invention is to provide a CCD semiconductor device which can be made thinner and smaller at the time of mounting. Still another object is to provide a method of manufacturing a semiconductor device for a CCD, which can easily manufacture the device.

[0016]

In order to achieve the above-mentioned object, a first aspect of the present invention is a CCD semiconductor device which is characterized in that a CCD sensor portion is formed on a main surface side of a semiconductor substrate.
An optical glass having a surface area larger than that of the CCD semiconductor chip, installed opposite to the CCD semiconductor chip, and for inputting an optical signal from the outside to the CCD sensor unit; A lead wire disposed on glass, the lead wire is connected to the electrode of the semiconductor chip for CCD by a conductive adhesive, and a part of the lead wire is externally provided as an external lead portion of the lead wire. That is, the semiconductor chip for CCD and the lead wiring are sealed in an exposed form.

According to the first aspect, the lead wiring is directly connected to the electrode of the semiconductor chip for CCD by the conductive adhesive, so that the device can be made thinner and smaller, and furthermore, the device can be made thinner and smaller. Since the structure is such that lead wires are provided on the optical glass as well as the thickness and size of the device itself, the height from the mounting substrate to the optical glass surface, which is the uppermost portion of the device, can be significantly reduced during mounting.

According to a second aspect of the present invention, there is provided a CCD semiconductor device according to the first aspect, wherein the lead wiring is disposed in a surface area of the optical glass, and the external lead portion of the lead wiring is provided. The optical glass is formed only on one side.

According to the second aspect of the present invention, since the external lead portion of the lead wiring is formed only on one side of the optical glass, the lateral width of the device can be reduced.

According to a third aspect of the present invention, in the semiconductor device for a CCD according to the first aspect, the lead wiring is disposed in a surface area of the optical glass, and the external lead portion of the lead wiring is provided. The optical glass is formed on a plurality of sides.

According to the third aspect of the present invention, since the external lead portions of the lead wiring are formed on a plurality of sides of the optical glass, the length of the lead wiring can be shortened as compared with the second aspect.

A feature of the method of manufacturing a CCD semiconductor device according to the fourth invention is that a lead wire is provided on optical glass in advance, and a CCD sensor portion is formed on a main surface side of a semiconductor substrate. The optical glass is placed so as to be opposed to the chip so that an optical signal is externally input to the CCD sensor unit, and the electrode of the semiconductor chip for CCD and the lead wiring are adhered to each other with a conductive adhesive. The present invention is characterized in that the CCD semiconductor chip and the lead wiring are sealed in such a manner that a part of the lead wiring is exposed to the outside as an external lead portion of the wiring.

According to the fourth aspect, an apparatus similar to that of the first aspect can be manufactured by a simpler method than the conventional one.

[0024]

Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional structural view of a CCD semiconductor device according to a first embodiment of the present invention, and FIG.
FIG. 2 is a plan view of the semiconductor device for CCD shown in FIG.

This CCD semiconductor device is composed of a semiconductor substrate 1
CC having a CCD sensor section 11b formed on the main surface side of 1a
A semiconductor chip 11 for D is provided. Further, the CCD semiconductor chip 11 is provided with an electrode 11c. The CCD semiconductor chip 11 has a function of converting an external light signal into an electric signal by the CCD sensor unit 11b and outputting the electric signal to the electrode 11c. .

An optical glass 12 for inputting an optical signal from the outside to the CCD sensor section 11b is provided with the CC glass.
It is installed so as to face the D semiconductor chip 11. The optical glass 12 has a surface area larger than that of the CCD semiconductor chip 11, and is installed so as to face the CCD semiconductor chip 11 so that the CCD sensor section 11b is located at the center thereof.

Further, in the surface area of the optical glass 12,
A number of lead wires 13 corresponding to the electrodes 11c of the CCD semiconductor chip 11 are provided. All the lead wires 13 are connected to the optical glass 12
Is formed on the surface of the optical glass 12 so as to be formed on one side (for example, the right side of FIG. 2). The optical glass 12 and the semiconductor chip 11 for CCD are
Except for the D sensor portion 11b, the insulating adhesive tape 14
Is glued through. Thereby, the semiconductor chip 11 for CCD is fixed to the optical glass 12 and
A slight gap 15 is formed from the CD sensor section 11b to the optical glass 12, so that an optical signal can be taken into the CCD sensor section 11b from the outside through the optical glass 12.

One end of each lead wiring 13 is connected to the electrode 11c of the CCD semiconductor chip 11 via a conductive adhesive 16 respectively. Then, the CCD semiconductor chip 11 and the lead wiring 13 are connected to the sealing potting resin 1 in such a manner that a part of each lead wiring 13 is exposed to the outside as an external lead portion 13a of each lead wiring 13.
7 sealed.

According to the CCD semiconductor device of the present embodiment, the optical signal input through the optical glass 12
The electric signal is converted into an electric signal by the D sensor unit 11b, and the electric signal is taken out from the external lead-out part 13a of the lead wiring 13 through the electrode 11c.

Next, a method of manufacturing the CCD semiconductor device having the above configuration will be described.

First, a number of lead wires 13 corresponding to the electrodes 11c of the CCD semiconductor chip 11 are arranged on the optical glass 12 in a pattern as shown in FIG. For example, a copper foil is attached to the entire back surface of the optical glass 12 with an adhesive or the like, and a pattern is formed by etching or the like. In the case of the present embodiment, the external lead-out portion 13a of each lead wire 13 is formed only on one side of the optical glass 12 in order to reduce the width of the device.

Then, before fixing (die bonding) the semiconductor chip 11 for CCD to the optical glass 12, an insulating adhesive tape 14 is attached to the semiconductor chip 11 for CCD.
It is stretched on the main surface side of. In this case, the CCD sensor portion 11b of the CCD semiconductor chip 11 and its surroundings and the electrode 1
1c does not include the insulating adhesive tape 14. Then, a conductive adhesive 16 is applied on each electrode 11c.

Thereafter, the electrodes 11c of the semiconductor chip 11 for the CCD are positioned at the leading ends of the lead wires 13 of the optical glass 12 so as to be positioned.
The semiconductor chip 11 for use is pressed and fixed to the optical glass 12. At this time, as described above, a slight gap 15 is formed in the CCD sensor portion 11b and its surrounding upper portion.

Thereafter, a resin mixed with a hardening material is prepared for potting, and a CCD semiconductor chip 11 is formed as an external lead portion 13a of each lead wiring 13 so that a part of each lead wiring 13 is exposed to the outside. And lead wiring 1
3 is covered with the potting resin 17 and is cured by ultraviolet rays (UV). Thus, the CCD semiconductor device shown in FIG. 1 having a structure in which the sealing portion is formed below the upper optical glass 12 is obtained.

Next, advantages of the present embodiment will be described in comparison with a conventional apparatus.

FIGS. 3A and 3B are views showing the state of the conventional CCD semiconductor device shown in FIG. 8 at the time of mounting, and FIG. 3A is a side view and FIG. (B) is a plan view. FIGS. 4A and 4B are views showing the state of the CCD semiconductor device according to the present embodiment shown in FIG. 1 at the time of mounting, and FIG. 4A is a side view and FIG. (B) is a plan view.

Conventionally, as shown in FIG.
When the CCD semiconductor device 110 shown in (1) is mounted on the flexible substrate 111 by solder 112,
The height T1 from the flexible substrate 111 to the upper surface of the device 110 becomes about 3.5 mm. Further, as shown in FIG. 3B, the depth T2 is 14 mm, and the width T3 is 9.0 m.
m. In the conventional device, as described above, as a result of securing the loop length of the bonding wire 104 and considering the dimensions of the outer lead frame 103, it is difficult to further reduce the thickness and size of the device itself. At the same time, it is also difficult to make the device thinner and smaller.

On the other hand, as shown in FIG. 4, in the CCD semiconductor device 10 of the present embodiment, the lead wiring 13 is directly connected to the electrode 11c of the CCD semiconductor chip 11 by the conductive adhesive 16. Therefore, the device itself can be made thinner and smaller. Therefore, as shown in FIG. 4A, when the CCD semiconductor device 10 of the present embodiment is mounted on the flexible substrate 21 by the solder 22, the height T10 from the flexible substrate 21 to the upper surface of the device 10 is reduced. The thickness is reduced to about 0.7 mm, and the thickness is reduced.
Further, as shown in FIG.
m, the width T12 is about 6.0 mm, and miniaturization is realized. That is, along with the thinning and miniaturization of the device itself,
Since the structure is such that the lead wires 13 are directly disposed on the surface of the optical glass 12, the height from the flexible substrate 21 to the optical glass surface, which is the uppermost part of the device, can be significantly reduced during mounting.

According to the present embodiment, in addition to making the device thinner and smaller, the method of manufacturing the device can be simplified as compared with the conventional method as described above.

FIG. 5 shows a CC according to a second embodiment of the present invention.
FIG. 6 is a sectional structural view of the semiconductor device for D, and FIG. 6 is a plan structural view of the semiconductor device for CCD shown in FIG. In both figures,
1 and 2 are denoted by the same reference numerals, and description thereof will be omitted.

In the first embodiment, the external lead portion 13a of the lead wire 13 is formed only on one side of the optical glass 12, but in the present embodiment, the external lead portion 13a of the lead wire 13 is provided on both left and right sides of the optical glass 12. Parts 13a, 13b
Is formed. In this embodiment, the manufacturing method is the same as that of the first embodiment.

In the present embodiment having such a structure, since the external lead portions 13a and 13b of the lead wiring 13 are formed on both the left and right sides of the optical glass 12, FIG. As described above, the lateral width is larger than that of the first embodiment. However, similarly to the first embodiment, the lead wiring 13 is connected to the semiconductor chip 1 for CCD by the conductive adhesive 16.
Since it is directly connected to one electrode 11c, the effect of thinning and miniaturization is remarkable as compared with the conventional device. Further, as in the first embodiment, it is not necessary to detour half of the lead wiring 13 to one side of the optical glass 12, and accordingly, the wiring length of the lead wiring 13 can be shortened.

[0043]

As described above in detail, according to the first aspect of the present invention, the lead wires can be directly connected to the electrodes of the CCD semiconductor chip by the conductive adhesive. In addition, the device itself can be made thinner and smaller. Further, along with this, thinning and miniaturization at the time of mounting become possible.

According to a second aspect of the present invention, there is provided the semiconductor device for a CCD according to the first aspect, wherein the lead wiring is disposed in a surface area of the optical glass, and the external lead portion of the lead wiring is formed of the optical glass. Since it is formed on one side, the width of the device can be reduced, and the size can be further reduced.

According to the third aspect of the present invention, the lead wires are provided in the surface area of the optical glass, and the external lead portions of the lead wires are formed on a plurality of sides of the optical glass. Therefore, it is possible to shorten the lead wiring length as compared with the second invention.

According to the method of manufacturing a semiconductor device for CCD according to the fourth invention, a semiconductor device for CCD having the same effect as that of the first invention can be manufactured by a simpler method than before.

[Brief description of the drawings]

FIG. 1 is a sectional structural view of a CCD semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a plan structural view of the CCD semiconductor device shown in FIG. 1;

FIG. 3 is a view showing a state when the conventional CCD semiconductor device shown in FIG. 8 is mounted.

FIG. 4 is a diagram showing a state when the CCD semiconductor device according to the first embodiment shown in FIG. 1 is mounted.

FIG. 5 is a sectional structural view of a CCD semiconductor device according to a second embodiment of the present invention.

6 is a plan structural view of the CCD semiconductor device shown in FIG. 5;

FIG. 7 is a diagram showing a state when the semiconductor device for CCD according to the embodiment shown in FIG. 5 is mounted.

FIG. 8 is a structural view showing an example of a conventional SOP type CCD semiconductor device.

[Explanation of symbols]

 Reference Signs List 11 semiconductor chip for CCD 11a semiconductor substrate 11b CCD sensor part 11c electrode 12 optical glass 13 lead wiring 13a, 13b external lead-out part 14 insulating adhesive tape 16 conductive adhesive 17 sealing potting resin

Claims (4)

[Claims] 1. A semiconductor chip for a CCD having a CCD sensor section formed on a main surface side of a semiconductor substrate, and a surface area larger than the semiconductor chip for a CCD. An optical glass for externally inputting an optical signal to the CCD sensor unit; and a lead wire provided on the optical glass, wherein the lead wire is connected to an electrode of the CCD semiconductor chip by a conductive adhesive. A semiconductor device for a CCD, wherein the CCD semiconductor chip and the lead wiring are sealed in such a manner that a part of the lead wiring is exposed to the outside as an external lead portion of the lead wiring. 2. The optical glass according to claim 1, wherein the lead wiring is disposed in a surface area of the optical glass, and the external lead portion of the lead wiring is formed only on one side of the optical glass. Semiconductor device for CCD. 3. The optical glass according to claim 1, wherein said lead wiring is disposed within a surface area of said optical glass, and said external lead portion of said lead wiring is formed on a plurality of sides of said optical glass. The semiconductor device for CCD described in the above. 4. A CC having a CCD sensor portion formed on an optical glass in advance and having a CCD sensor formed on a main surface side of a semiconductor substrate.
The optical glass is installed so as to face the semiconductor chip for D so as to input an optical signal from the outside to the CCD sensor unit, and the electrodes of the semiconductor chip for CCD and the lead wires are adhered with a conductive adhesive. Wherein the CCD semiconductor chip and the lead wiring are sealed in such a manner that a part of the lead wiring is exposed to the outside as an external lead portion of the lead wiring.
Of manufacturing a semiconductor device for semiconductor devices.