JPH10328904A - Coat forming method to inner peripheral surface of guide bush - Google Patents

Abstract

PROBLEM TO BE SOLVED: To form uniform film thickness at an opening end face and on the opening inner side without generating film thickness distribution of a hard carbon film and an intermediate layer formed on the inner peripheral surface, improve adhesion of the hard carbon film without generating separation of the hard carbon film caused by thinning of film thickness of the intermediate layer, and form the hard carbon film of excellent adhesion at a guide bush without the generation of hollow electric discharge because of the same electric potential not being opposed on the inner surface of an opening. SOLUTION: A guide bush 11 is arranged inside a vacuum tank 61 so that an auxiliary electrode 71 formed of intermediate layer material and connected to an auxiliary electrode power source 83a is inserted in an opening of the guide bush 11. The guide bush 11 is connected to earth potential, and after exhausting the inside of the vacuum tank 61, sputter gus is led in from a gas lead-in port 63, and D.C. negative voltage is applied to the auxiliary electrode 71 from the auxiliary electrode power source 83a so as to generate plasma around the auxiliary electrode 71 in the opening of the guide bush 11 and to form an intermediate layer on the inner paripheral surface of the guide bush 11. A hard carbon film is then formed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a rotary or fixed type guide bush which is provided on an automatic lathe and rotatably supports a workpiece. The present invention relates to a method for forming a film with a carbon film.

[0002]

2. Description of the Related Art An inner peripheral surface of a guide bush provided on an automatic lathe column of an automatic lathe and rotatably supporting a workpiece is always in contact with the workpiece and rotates together with the workpiece, or the inner peripheral surface of the guide bush is rotated. The workpiece rotates or slides further in the axial direction. It has been proposed to provide a hard carbon film on the inner peripheral surface of the guide bush.

[0003] The hard carbon film has a black color and has properties very similar to diamond. That is, the hard carbon film is
It has high mechanical hardness, low coefficient of friction, good electrical insulation, high thermal conductivity and high corrosion resistance. Therefore, it has been proposed to coat a hard carbon film on decorative articles, medical equipment, magnetic heads, tools, and the like.

As a means for forming the hard carbon film on the guide bush with good adhesion, for example, Japanese Patent Application Laid-Open No. 56-6920 discloses a method in which an intermediate layer made of silicon or a silicon compound is formed on the guide bush by sputtering. A method of forming a hard carbon film on the intermediate layer has been proposed.

A method of forming an intermediate layer in the prior art described in this publication will be described with reference to FIG. FIG. 11 is a cross-sectional view showing a method of forming an intermediate layer formed below a hard carbon film in the related art.

As shown in FIG. 11, a target cover 55a, which is surrounded by a target cover 55a, surrounds a target 55 made of an intermediate layer material, and a guide bush 11 having an opening and forming an intermediate layer on its inner peripheral surface. It is arranged in the vacuum layer 61 so as to face each other. The guide bush 11 is connected to a ground potential.

Thereafter, the inside of the vacuum layer 61 is evacuated from the exhaust port 65 by an exhaust means (not shown). Thereafter, an argon (Ar) gas is introduced as a sputtering gas from the gas introduction port 63. Thereafter, a negative DC voltage is applied to the target 55 from the target power supply 57.

[0008] Then, plasma is generated in the vacuum layer 61, and ions in the plasma sputter the surface of the target 55 made of an intermediate layer material. Then, the material of the intermediate layer that has been knocked out from the surface of the target 55 adheres to the guide bush 11, and an intermediate layer made of silicon or a silicon compound can be formed on the guide bush 11.

Then, a hard carbon film is formed on the upper surface of the intermediate layer. Next, a method of forming the hard carbon film will be described with reference to FIG. FIG. 12 is a cross-sectional view illustrating a method of forming a hard carbon film according to a conventional technique. The method for forming a hard carbon film described below is not described in the above-mentioned publication.

As shown in FIG. 12, a guide bush 11 is provided in a vacuum chamber 61 having a gas inlet 63 and an exhaust port 65.
Place. Then, an intermediate layer is formed on the guide bush 11, and a hard carbon film is formed on the upper surface of the intermediate layer.

Then, the inside of the vacuum chamber 61 is evacuated from the exhaust port 65 by exhaust means (not shown). After that, a gas containing carbon is introduced into the vacuum chamber 61 from the gas inlet 63 and adjusted to a set pressure.

Thereafter, the anode 79 is connected to the anode power source 7.
5, a DC voltage is applied to the filament 81, and an AC voltage is applied to the filament 81 from the filament power supply 77. Further, a DC voltage is applied to the guide bush 11 from a DC power supply 73. Then, plasma is generated in the vacuum chamber 61 to form a hard carbon film on the guide bush 11.

In the method of forming a hard carbon film shown in FIG. 12, a plasma generated by a DC voltage applied to the guide bush 11, a filament 81 to which an AC voltage is applied, and an anode 79 to which a DC voltage is applied are generated. Plasma is generated.

The plasma in the vicinity of the guide bush 11 or the plasma in the vicinity of the filament 81 and the anode 79 mainly forms the hard carbon film due to the pressure in the vacuum chamber 61 when the hard carbon film is formed. I have.

[0015]

In the method for forming a hard carbon film described with reference to FIG. 12, when the pressure inside the vacuum chamber 61 is 3 × 10 ⁻³ torr or more, the pressure is generated around the guide bush 11. The generated plasma mainly decomposes a gas containing carbon to form a hard carbon film.

At this time, a hard carbon film can be formed on the outer peripheral portion of the guide bush 11 with good uniformity.
The hard carbon film formed on the inner peripheral surface of the guide bush 11 has poor adhesion, and further has poor film quality such as hardness. This is because the same voltage is applied to the guide bush 11, the inner surface of the opening is a space where electrodes of the same potential face each other, and the plasma on the inner surface of the opening generates an abnormal discharge called hollow discharge.

The hard carbon film formed by the hollow discharge is a polymer-like film having poor adhesion, and is easily peeled from the guide bush 11 and has a low hardness.

On the other hand, when the pressure in the vacuum chamber 61 is 3 × 1
When the pressure is lower than 0 ^-3 torr, the plasma generated around the filament 81 and the anode 79 mainly contributes to the formation of the hard carbon film from the plasma around the guide bush 11.

At this time, a hard carbon film can be formed on the outer peripheral portion of the guide bush 11 with good uniformity.
The hard carbon film formed on the inner peripheral surface of the guide bush 11 cannot have a uniform thickness in the longitudinal direction of the guide bush 11.

Here, the filament 81 and the anode 79
The carbon ions ionized by the plasma generated in the vicinity are pulled by the DC negative potential applied to the guide bush 11 and deposited, thereby forming a hard carbon film on the guide bush 11.

The pressure in the vacuum chamber 61 is 3 × 10 ⁻³ t.
When the pressure is higher than orr, the hard carbon film is formed by chemical vapor deposition, while the pressure is 3 × 10 ⁻³ torr.
If lower, the hard carbon film is formed by physical vapor deposition.

For this purpose, the filament 81 and the anode 7
In the case of forming a hard carbon film in which the plasma generated in the vicinity of 9 mainly contributes, the inner peripheral surface of the guide bush 11 extends from the opening end face toward the back of the opening similarly to the physical vapor deposition method such as the vacuum evaporation method. The thickness of the hard carbon film is reduced. As a result, the hard carbon film formed on the inner peripheral surface of the guide bush 11 cannot have a uniform thickness in the longitudinal direction of the guide bush 11.

Further, also in the method of forming the intermediate layer shown in FIG. 11, the thickness of the intermediate layer on the inner peripheral surface of the guide bush 11 becomes thinner from the opening end face toward the back of the opening. The thickness distribution of the intermediate layer formed on the inner peripheral surface of the guide bush will be described with reference to the graph of FIG. In the graph of FIG. 5, the horizontal axis indicates the distance from the open end of the guide bush,
The vertical axis indicates the thickness of the intermediate layer formed on the inner peripheral surface of the guide bush. A curve 87 shows the state of the thickness of the intermediate layer when formed by the film forming method shown in FIG.

As shown by a curve 87 in the graph of FIG. 5, when an intermediate layer having a thickness of 0.5 μm is formed at the open end of the guide bush, the intermediate layer formed by the method shown in FIG. At a position 30 mm into the back,
The thickness of the intermediate layer is extremely thin at 0.1 μm.

When the variation in the thickness distribution of the intermediate layer becomes large, when the hard carbon film is formed on the upper surface of the intermediate layer, the hard carbon film can be formed with good adhesion near the open end region of the guide bush 11. However, the hard carbon film on the back side of the opening peels off.

As described with reference to the graph of FIG. 5, the thickness of the intermediate layer is small at the back side of the guide bush opening.
This is because the hard carbon film cannot withstand the stress of the hard carbon film and the hard carbon film peels off.

[Object of the Invention] An object of the present invention is to solve the above-mentioned problems and to form an intermediate layer with a uniform thickness on the inner peripheral surface of a guide bush, and to form a hard carbon film with good adhesion and uniformity. An object of the present invention is to provide a method for forming a film on the inner peripheral surface of a guide bush that can be formed with a film thickness.

[0028]

Means for Solving the Problems In order to achieve the above object, a method for forming a coating on the inner peripheral surface of a guide bush according to the present invention employs the following means.

According to the method of forming a coating on the inner peripheral surface of the guide bush of the present invention, the guide bush is arranged in a vacuum chamber so that an auxiliary electrode made of an intermediate layer material is inserted into an opening of the guide bush and an auxiliary electrode made of an intermediate layer material is inserted. Then, the guide bush is connected to the ground potential, and after evacuation of the vacuum chamber, a sputter gas is introduced from the gas inlet, and a DC negative voltage is applied from the auxiliary electrode power source to the auxiliary electrode to form an auxiliary electrode in the opening of the guide bush. Plasma is generated around the guide bush, an intermediate layer is formed on the inner peripheral surface of the guide bush, and then the guide bush is inserted into the vacuum chamber so that an auxiliary electrode connected to a ground potential or a DC positive voltage is inserted into the inner surface of the guide bush opening. After exhausting the vacuum chamber, a gas containing carbon is introduced into the vacuum chamber from the gas inlet, a DC voltage is applied to the guide bush, and a DC voltage is applied to the anode. And forming a hard carbon film by applying an AC voltage to the guide bush by generating plasma in Iramento.

In the method for forming a coating on the inner peripheral surface of the guide bush according to the present invention, the guide bush is arranged in the vacuum chamber so that an auxiliary electrode made of an intermediate layer material is inserted into the opening of the guide bush and connected to an auxiliary electrode power supply. Then, the guide bush is connected to the ground potential, and after evacuation of the vacuum chamber, a sputter gas is introduced from the gas inlet, and a DC negative voltage is applied from the auxiliary electrode power source to the auxiliary electrode to form an auxiliary electrode in the opening of the guide bush. A plasma is generated around the guide bush, an intermediate layer is formed on the inner peripheral surface of the guide bush, and then the guide bush is inserted into the vacuum chamber so that an auxiliary electrode connected to a ground potential or a DC positive voltage is inserted into the inner surface of the guide bush opening. After evacuation of the vacuum chamber, a gas containing carbon is introduced into the vacuum chamber from the gas inlet, and high-frequency power is applied to the guide bush to generate plasma. And forming a hard carbon film Dobusshu.

According to the method of forming a coating on the inner peripheral surface of the guide bush of the present invention, the guide bush is arranged in a vacuum chamber so that an auxiliary electrode made of an intermediate layer material is inserted into the opening of the guide bush and an auxiliary electrode made of an intermediate layer material is inserted. Then, the guide bush is connected to the ground potential, and after evacuation of the vacuum chamber, a sputter gas is introduced from the gas inlet, and a DC negative voltage is applied from the auxiliary electrode power source to the auxiliary electrode to form an auxiliary electrode in the opening of the guide bush. A plasma is generated around the guide bush, an intermediate layer is formed on the inner peripheral surface of the guide bush, and then the guide bush is inserted into the vacuum chamber so that an auxiliary electrode connected to a ground potential or a DC positive voltage is inserted into the inner surface of the guide bush opening. After exhausting the vacuum chamber, a gas containing carbon is introduced into the vacuum chamber from the gas inlet, and a DC voltage is applied to the guide bush to generate plasma. And forming a hard carbon film on the bush.

In the method for forming a coating on the inner peripheral surface of the guide bush according to the present invention, the guide bush is arranged in a vacuum chamber so that an auxiliary electrode made of a material of an intermediate layer is inserted into an opening of the guide bush and an auxiliary electrode made of an intermediate layer material is inserted. After evacuation of the vacuum chamber, a sputtering gas is introduced from the gas inlet, a DC negative voltage is applied to the guide bush from a DC power supply, and a DC negative voltage is applied to the auxiliary electrode from the auxiliary electrode power supply to the guide bush. Plasma is generated around the auxiliary electrode in the opening of the guide bush, an intermediate layer is formed on the inner peripheral surface of the guide bush, and then the auxiliary electrode connected to the ground potential or DC positive voltage is inserted into the inner surface of the opening of the guide bush. After the guide bush is placed in the vacuum chamber and the inside of the vacuum chamber is evacuated, a gas containing carbon is introduced into the vacuum chamber from a gas inlet, and a DC voltage is applied to the guide bush. Characterized in that o de DC voltage is applied to the plasma is generated by applying an AC voltage to the filament to form a hard carbon film on the guide bush.

In the method for forming a coating on the inner peripheral surface of the guide bush according to the present invention, the guide bush is arranged in a vacuum chamber so that an auxiliary electrode made of an intermediate layer material is inserted into the opening of the guide bush so as to be connected to an auxiliary electrode power supply. After evacuation of the vacuum chamber, a sputtering gas is introduced from the gas inlet, a DC negative voltage is applied to the guide bush from a DC power supply, and a DC negative voltage is applied to the auxiliary electrode from the auxiliary electrode power supply to the guide bush. Plasma is generated around the auxiliary electrode in the opening of the guide bush, an intermediate layer is formed on the inner peripheral surface of the guide bush, and then the auxiliary electrode connected to the ground potential or DC positive voltage is inserted into the inner surface of the opening of the guide bush. After placing the guide bush in the vacuum chamber, exhausting the vacuum chamber, introducing a gas containing carbon into the vacuum chamber from the gas inlet, applying high-frequency power to the guide bush, Zuma is generated and forming a hard carbon film on the guide bush.

According to the method of forming a film on the inner peripheral surface of the guide bush of the present invention, the guide bush is arranged in the vacuum chamber so as to be connected to the auxiliary electrode power supply and to insert the auxiliary electrode made of the intermediate layer material into the opening of the guide bush. After evacuation of the vacuum chamber, a sputtering gas is introduced from the gas inlet, a DC negative voltage is applied to the guide bush from a DC power supply, and a DC negative voltage is applied to the auxiliary electrode from the auxiliary electrode power supply to the guide bush. Plasma is generated around the auxiliary electrode in the opening of the guide bush, an intermediate layer is formed on the inner peripheral surface of the guide bush, and then the auxiliary electrode connected to the ground potential or DC positive voltage is inserted into the inner surface of the opening of the guide bush. After placing the guide bush in the vacuum chamber, evacuating the vacuum chamber, introducing a gas containing carbon into the vacuum chamber from the gas inlet, applying a DC voltage to the guide bush, It is generated between and forming a hard carbon film on the guide bush.

According to the method of forming a coating on the inner peripheral surface of the guide bush of the present invention, the guide bush is arranged in the vacuum chamber so that the auxiliary electrode made of an intermediate layer material is inserted into the opening of the guide bush and connected to the auxiliary electrode power supply. Then, the guide bush is connected to the ground potential, and after evacuation of the vacuum chamber, an AC voltage is applied from the auxiliary electrode power source to the auxiliary electrode to form an intermediate layer on the inner peripheral surface of the guide bush by a resistance heating vapor deposition method. The guide bush is arranged in a vacuum chamber so that an auxiliary electrode connected to a ground potential or a positive DC voltage is inserted into the inner surface of the guide bush opening, and after evacuation of the vacuum chamber, the gas containing carbon is evacuated from the gas inlet. It is introduced into the tank, a DC voltage is applied to the guide bush, a DC voltage is applied to the anode, an AC voltage is applied to the filament to generate plasma, and the hard bush is applied to the guide bush. And forming a down film.

In the method of forming a coating on the inner peripheral surface of the guide bush according to the present invention, the guide bush is arranged in the vacuum chamber so as to be connected to the auxiliary electrode power supply and to insert the auxiliary electrode made of the intermediate layer material into the opening of the guide bush. Then, the guide bush is connected to the ground potential, and after evacuation of the vacuum chamber, an AC voltage is applied from the auxiliary electrode power source to the auxiliary electrode to form an intermediate layer on the inner peripheral surface of the guide bush by a resistance heating vapor deposition method. The guide bush is arranged in a vacuum chamber so that an auxiliary electrode connected to a ground potential or a DC positive voltage is inserted into the inner surface of the opening of the guide bush, and after evacuation of the vacuum chamber, a gas containing carbon is introduced from a gas inlet. The method is characterized in that a hard carbon film is formed on a guide bush by introducing the guide bush into a vacuum chamber and applying high frequency power to the guide bush to generate plasma.

According to the method of forming a coating on the inner peripheral surface of the guide bush of the present invention, the guide bush is arranged in the vacuum chamber so that the auxiliary electrode made of an intermediate layer material is inserted into the opening of the guide bush and connected to the auxiliary electrode power supply. Then, the guide bush is connected to the ground potential, and after evacuation of the vacuum chamber, an AC voltage is applied from the auxiliary electrode power source to the auxiliary electrode to form an intermediate layer on the inner peripheral surface of the guide bush by a resistance heating vapor deposition method. The guide bush is arranged in a vacuum chamber so that an auxiliary electrode connected to a ground potential or a DC positive voltage is inserted into the inner surface of the opening of the guide bush, and after evacuation of the vacuum chamber, a gas containing carbon is introduced from a gas inlet. A hard carbon film is formed on the guide bush by introducing the guide bush into a vacuum chamber and applying a DC voltage to the guide bush to generate plasma.

According to the method of forming a coating on the inner peripheral surface of the guide bush of the present invention, the guide bush is arranged in the vacuum chamber so as to be connected to the auxiliary electrode power supply and to insert the auxiliary electrode made of the intermediate layer material into the opening of the guide bush. After evacuation of the vacuum chamber, a DC negative voltage is applied to the guide bush from a DC power supply, an AC voltage is applied to the auxiliary electrode from the auxiliary electrode power supply, and an intermediate layer is formed on the inner peripheral surface of the guide bush by resistance heating evaporation. After that, the guide bush is arranged in the vacuum chamber so that an auxiliary electrode connected to the ground potential or the DC positive voltage is inserted into the inner surface of the opening of the guide bush, and after evacuation of the vacuum chamber,
A gas containing carbon is introduced into the vacuum chamber from a gas inlet, a DC voltage is applied to the guide bush, a DC voltage is applied to the anode, an AC voltage is applied to the filament, and plasma is generated, and a hard carbon is applied to the guide bush. The method is characterized in that a film is formed.

According to the method for forming a coating on the inner peripheral surface of the guide bush of the present invention, the guide bush is arranged in the vacuum chamber so as to connect to the auxiliary electrode power supply and insert the auxiliary electrode made of the intermediate layer material into the opening of the guide bush. After evacuation of the vacuum chamber, a DC negative voltage is applied to the guide bush from a DC power supply, an AC voltage is applied to the auxiliary electrode from the auxiliary electrode power supply, and an intermediate layer is formed on the inner peripheral surface of the guide bush by resistance heating evaporation. After that, the guide bush is arranged in the vacuum chamber so that an auxiliary electrode connected to a ground potential or a DC positive voltage is inserted into the inner surface of the opening of the guide bush, and after evacuation of the vacuum chamber, the gas is introduced from the gas inlet. It is characterized in that a gas containing carbon is introduced into a vacuum chamber, high-frequency power is applied to the guide bush to generate plasma, and a hard carbon film is formed on the guide bush.

According to the method for forming a coating on the inner peripheral surface of the guide bush of the present invention, the guide bush is arranged in the vacuum chamber so as to be connected to the auxiliary electrode power supply and to insert the auxiliary electrode made of the intermediate layer material into the opening of the guide bush. After evacuation of the vacuum chamber, a DC negative voltage is applied to the guide bush from a DC power supply, an AC voltage is applied to the auxiliary electrode from the auxiliary electrode power supply, and an intermediate layer is formed on the inner peripheral surface of the guide bush by resistance heating evaporation. After that, the guide bush is arranged in the vacuum chamber so that the auxiliary electrode connected to the ground potential or the DC positive voltage is inserted into the inner surface of the opening of the guide bush, and the inside of the vacuum chamber is evacuated. A gas containing carbon is introduced into the vacuum chamber from above, and a DC voltage is applied to the guide bush to generate plasma to form a hard carbon film on the guide bush.

According to the method for forming a coating on the inner peripheral surface of the guide bush of the present invention, the guide bush is arranged in the vacuum chamber so that the auxiliary electrode made of the intermediate layer material is inserted into the opening of the guide bush and the auxiliary electrode made of the intermediate layer material is inserted. Then, the guide bush is connected to the ground potential, and after evacuation of the vacuum chamber, a sputter gas is introduced from the gas inlet, high-frequency power is applied from the auxiliary electrode power source to the auxiliary electrode, and the auxiliary electrode in the opening of the guide bush is opened. Plasma is generated around it, an intermediate layer is formed on the inner peripheral surface of the guide bush, and then the guide bush is inserted into the vacuum chamber so that an auxiliary electrode connected to the ground potential or DC positive voltage is inserted into the inner surface of the guide bush opening. After evacuating the vacuum chamber, introducing a gas containing carbon into the vacuum chamber from the gas inlet, applying a DC voltage to the guide bush, and applying a DC voltage to the anode. And forming a hard carbon film by applying an AC voltage to the guide bush by generating plasma in Iramento.

According to the method of forming a coating on the inner peripheral surface of the guide bush of the present invention, the guide bush is arranged in the vacuum chamber so that the auxiliary electrode made of an intermediate layer material is inserted into the opening of the guide bush so as to be connected to the auxiliary electrode power supply. Then, the guide bush is connected to the ground potential, and after evacuation of the vacuum chamber, a sputter gas is introduced from the gas inlet, high-frequency power is applied to the auxiliary electrode from the auxiliary electrode power supply, and the auxiliary electrode in the guide bush opening is opened. A plasma is generated around the guide bush, an intermediate layer is formed on the inner peripheral surface of the guide bush, and then the guide bush is inserted into the vacuum chamber so that an auxiliary electrode connected to a ground potential or a DC positive voltage is inserted into the inner surface of the guide bush opening. After exhausting the vacuum chamber, a gas containing carbon is introduced into the vacuum chamber from the gas inlet, and high-frequency power is applied to the guide bush to generate plasma. And forming a hard carbon film on the guide bush.

According to the method of forming a coating on the inner peripheral surface of the guide bush of the present invention, the guide bush is arranged in the vacuum chamber so as to connect to the auxiliary electrode power supply and insert the auxiliary electrode made of the intermediate layer material into the opening of the guide bush. Then, the guide bush is connected to the ground potential, and after evacuation of the vacuum chamber, a sputter gas is introduced from the gas inlet, high-frequency power is applied to the auxiliary electrode from the auxiliary electrode power supply, and the auxiliary electrode in the guide bush opening is opened. A plasma is generated around the guide bush, an intermediate layer is formed on the inner peripheral surface of the guide bush, and then the guide bush is inserted into the vacuum chamber so that an auxiliary electrode connected to a ground potential or a DC positive voltage is inserted into the inner surface of the guide bush opening. After exhausting the inside of the vacuum chamber, a gas containing carbon is introduced from the gas inlet into the vacuum chamber, and a DC voltage is applied to the guide bush to generate plasma. And forming a hard carbon film id bush.

According to the method of forming a film on the inner peripheral surface of the guide bush of the present invention, the guide bush is arranged in the vacuum chamber so as to connect to the auxiliary electrode power supply and insert the auxiliary electrode made of the intermediate layer material into the opening of the guide bush. After evacuation of the vacuum chamber, a sputtering gas is introduced from the gas inlet, a DC negative voltage is applied to the guide bush from a DC power supply, and a high-frequency power is applied to the auxiliary electrode from the auxiliary electrode power supply to the guide bush. Plasma is generated around the auxiliary electrode in the opening, an intermediate layer is formed on the inner peripheral surface of the guide bush, and then the auxiliary electrode connected to the ground potential or DC positive voltage is inserted into the inner surface of the guide bush. After arranging the bush in the vacuum chamber and evacuating the vacuum chamber, a gas containing carbon is introduced into the vacuum chamber from a gas inlet, and a DC voltage is applied to the guide bush. Node DC voltage to an AC voltage is applied to the filaments to generate plasma, and forming a hard carbon film on the guide bush.

According to the method of forming a film on the inner peripheral surface of the guide bush of the present invention, the guide bush is arranged in the vacuum chamber so as to be connected to the auxiliary electrode power supply and to insert the auxiliary electrode made of the intermediate layer material into the opening of the guide bush. After evacuation of the vacuum chamber, a sputtering gas is introduced from the gas inlet, a DC negative voltage is applied to the guide bush from a DC power supply, and a high-frequency power is applied to the auxiliary electrode from the auxiliary electrode power supply to the guide bush. Plasma is generated around the auxiliary electrode in the opening, an intermediate layer is formed on the inner peripheral surface of the guide bush, and then the auxiliary electrode connected to the ground potential or DC positive voltage is inserted into the inner surface of the guide bush. Place the bush in the vacuum chamber, exhaust the vacuum chamber, introduce a gas containing carbon into the vacuum chamber from the gas inlet, apply high frequency power to the guide bush, and press Zuma is generated and forming a hard carbon film on the guide bush.

According to the method for forming a coating on the inner peripheral surface of the guide bush of the present invention, the guide bush is arranged in the vacuum chamber so as to be connected to the auxiliary electrode power supply and to insert the auxiliary electrode made of the intermediate layer material into the opening of the guide bush. After evacuation of the vacuum chamber, a sputtering gas is introduced from the gas inlet, a DC negative voltage is applied to the guide bush from a DC power supply, and a high-frequency power is applied to the auxiliary electrode from the auxiliary electrode power supply to the guide bush. Plasma is generated around the auxiliary electrode in the opening, an intermediate layer is formed on the inner peripheral surface of the guide bush, and then the auxiliary electrode connected to the ground potential or DC positive voltage is inserted into the inner surface of the guide bush. After placing the bush in the vacuum chamber, exhausting the vacuum chamber, introducing a gas containing carbon into the vacuum chamber from the gas inlet, applying a DC voltage to the guide bush, It is generated between and forming a hard carbon film on the guide bush.

According to the method of forming a coating on the inner peripheral surface of the guide bush of the present invention, the guide bush is connected to an auxiliary electrode power source in the opening of the guide bush and the guide bush is inserted into the vacuum chamber so as to insert the auxiliary electrode made of the first intermediate layer material. The guide bush is connected to the ground potential, and after evacuation of the vacuum chamber, a sputter gas is introduced from the gas inlet, and a DC negative voltage is applied from the auxiliary electrode power source to the auxiliary electrode to open the guide bush. The first intermediate layer is formed on the inner peripheral surface of the guide bush by generating plasma around the auxiliary electrode, and the guide bush is arranged in the vacuum chamber so that the auxiliary electrode made of the second intermediate layer material is inserted. A DC negative voltage is applied to the auxiliary electrode from the auxiliary electrode power supply to generate plasma around the auxiliary electrode in the opening of the guide bush, thereby forming a second intermediate layer on the inner peripheral surface of the guide bush. The guide bush is placed in the vacuum chamber so that the auxiliary electrode connected to the ground potential or DC positive voltage is inserted into the inner surface of the opening of the bush, and after evacuating the vacuum chamber, the gas containing carbon is supplied from the gas inlet to the vacuum chamber. And a DC voltage is applied to the guide bush, a DC voltage is applied to the anode, an AC voltage is applied to the filament to generate plasma, and a hard carbon film is formed on the guide bush.

According to the method of forming a coating on the inner peripheral surface of the guide bush of the present invention, the guide bush is connected to an auxiliary electrode power source in the opening of the guide bush and the guide bush is inserted into the vacuum chamber so as to insert the auxiliary electrode made of the first intermediate layer material. The guide bush is connected to the ground potential, and after evacuation of the vacuum chamber, a sputter gas is introduced from the gas inlet, and a DC negative voltage is applied from the auxiliary electrode power source to the auxiliary electrode to open the guide bush. The first intermediate layer is formed on the inner peripheral surface of the guide bush by generating plasma around the auxiliary electrode, and the guide bush is arranged in the vacuum chamber so that the auxiliary electrode made of the second intermediate layer material is inserted. A DC negative voltage is applied to the auxiliary electrode from the auxiliary electrode power supply to generate plasma around the auxiliary electrode in the opening of the guide bush, thereby forming a second intermediate layer on the inner peripheral surface of the guide bush. The guide bush is placed in the vacuum chamber so that the auxiliary electrode connected to the ground potential or DC positive voltage is inserted into the inner surface of the opening of the gas bush. A hard carbon film is formed on the guide bush by introducing the guide bush and applying high frequency power to the guide bush to generate plasma.

According to the method of forming a film on the inner peripheral surface of the guide bush of the present invention, the guide bush is connected to the auxiliary electrode power supply and inserted into the opening of the guide bush so that the auxiliary electrode made of the first intermediate layer material is inserted into the vacuum chamber. The guide bush is connected to the ground potential, and after evacuation of the vacuum chamber, a sputter gas is introduced from the gas inlet, and a DC negative voltage is applied from the auxiliary electrode power source to the auxiliary electrode to open the guide bush. The first intermediate layer is formed on the inner peripheral surface of the guide bush by generating plasma around the auxiliary electrode, and the guide bush is arranged in the vacuum chamber so that the auxiliary electrode made of the second intermediate layer material is inserted. A DC negative voltage is applied to the auxiliary electrode from the auxiliary electrode power supply to generate plasma around the auxiliary electrode in the opening of the guide bush, thereby forming a second intermediate layer on the inner peripheral surface of the guide bush. The guide bush is placed in the vacuum chamber so that the auxiliary electrode connected to the ground potential or DC positive voltage is inserted into the inner surface of the bush, and after exhausting the vacuum chamber, the gas containing carbon is evacuated from the gas inlet. The method is characterized in that a hard carbon film is formed on the guide bush by introducing the guide bush into the tank and applying a DC voltage to the guide bush to generate plasma.

In the method of forming a coating on the inner peripheral surface of the guide bush according to the present invention, the guide bush is connected to an auxiliary electrode power supply and inserted into the opening of the guide bush so that the auxiliary electrode made of the first intermediate layer material is inserted into the vacuum chamber. After evacuating the vacuum chamber, a sputtering gas is introduced from the gas inlet, a DC negative voltage is applied to the guide bush from a DC power supply, and a DC negative voltage is applied to the auxiliary electrode from the auxiliary electrode power supply. Plasma is generated around the auxiliary electrode in the opening of the guide bush to form a first intermediate layer on the inner peripheral surface of the guide bush.
The guide bush is placed in the vacuum chamber so that the auxiliary electrode made of the intermediate layer material is inserted, and a DC negative voltage is applied to the auxiliary electrode from the auxiliary electrode power source to generate plasma around the auxiliary electrode in the opening of the guide bush. A second intermediate layer is formed on the inner peripheral surface of the guide bush and then the guide bush is arranged in the vacuum chamber so that an auxiliary electrode connected to a ground potential or a DC positive voltage is inserted into the inner surface of the opening of the guide bush. After evacuation of the vacuum chamber, a gas containing carbon is introduced into the vacuum chamber through a gas inlet, a DC voltage is applied to the guide bush, a DC voltage is applied to the anode, and an AC voltage is applied to the filament, and the plasma is applied. And a hard carbon film is formed on the guide bush.

In the method of forming a coating on the inner peripheral surface of the guide bush according to the present invention, the guide bush is connected to an auxiliary electrode power supply in the opening of the guide bush and the guide bush is inserted into the vacuum chamber so as to insert the auxiliary electrode made of the first intermediate layer material. After evacuating the vacuum chamber, a sputtering gas is introduced from the gas inlet, a DC negative voltage is applied to the guide bush from a DC power supply, and a DC negative voltage is applied to the auxiliary electrode from the auxiliary electrode power supply. Plasma is generated around the auxiliary electrode in the opening of the guide bush to form a first intermediate layer on the inner peripheral surface of the guide bush.
The guide bush is placed in the vacuum chamber so that the auxiliary electrode made of the intermediate layer material is inserted, and a DC negative voltage is applied to the auxiliary electrode from the auxiliary electrode power source to generate plasma around the auxiliary electrode in the opening of the guide bush. Then, a second intermediate layer is formed on the inner peripheral surface of the guide bush, and then the guide bush is inserted into the vacuum chamber so that an auxiliary electrode connected to a ground potential or a DC positive voltage is inserted into the inner surface of the opening of the guide bush. After arranging and evacuating the vacuum chamber, introducing a gas containing carbon from the gas inlet into the vacuum chamber, applying high-frequency power to the guide bush to generate plasma, and forming a hard carbon film on the guide bush. It is characterized by.

In the method of forming a coating on the inner peripheral surface of the guide bush according to the present invention, the guide bush is connected to an auxiliary electrode power supply in the opening of the guide bush and the guide bush is inserted into the vacuum chamber so as to insert the auxiliary electrode made of the first intermediate layer material. After evacuating the vacuum chamber, a sputtering gas is introduced from the gas inlet, a DC negative voltage is applied to the guide bush from a DC power supply, and a DC negative voltage is applied to the auxiliary electrode from the auxiliary electrode power supply. Plasma is generated around the auxiliary electrode in the opening of the guide bush to form a first intermediate layer on the inner peripheral surface of the guide bush.
The guide bush is placed in the vacuum chamber so that the auxiliary electrode made of the intermediate layer material is inserted, and a DC negative voltage is applied to the auxiliary electrode from the auxiliary electrode power source to generate plasma around the auxiliary electrode in the opening of the guide bush. Then, a second intermediate layer is formed on the inner peripheral surface of the guide bush, and then the guide bush is inserted into the vacuum chamber so that an auxiliary electrode connected to a ground potential or a DC positive voltage is inserted into the inner surface of the opening of the guide bush. After arranging and evacuating the vacuum chamber, introducing a gas containing carbon into the vacuum chamber from the gas inlet, applying a DC voltage to the guide bush to generate plasma, and forming a hard carbon film on the guide bush. It is characterized by.

In the method of forming a coating on the inner peripheral surface of the guide bush according to the present invention, the guide bush is connected to an auxiliary electrode power source in the opening of the guide bush so that the auxiliary bush is inserted into the vacuum chamber so that the auxiliary electrode made of the first intermediate layer material is inserted. The guide bush is connected to the ground potential, the inside of the vacuum chamber is evacuated, an AC voltage is applied to the auxiliary electrode from the auxiliary electrode power source, and a first intermediate portion is formed on the inner peripheral surface of the guide bush by the resistance heating vapor deposition method. A guide bush is arranged in a vacuum chamber so that a layer is formed and an auxiliary electrode made of a material of the second intermediate layer is inserted. An AC voltage is applied to the auxiliary electrode from an auxiliary electrode power source, and the guide bush is formed by resistance heating evaporation. A second intermediate layer is formed on the inner peripheral surface of the guide bush, and then the guide bush is arranged in the vacuum chamber so that an auxiliary electrode connected to a ground potential or a positive DC voltage is inserted into the inner surface of the opening of the guide bush. After evacuation of the vacuum chamber, a gas containing carbon is introduced into the vacuum chamber from the gas inlet, a DC voltage is applied to the guide bush, a DC voltage is applied to the anode, and an AC voltage is applied to the filament to generate plasma. Then, a hard carbon film is formed on the guide bush.

In the method of forming a coating on the inner peripheral surface of the guide bush according to the present invention, the guide bush is connected to an auxiliary electrode power supply and inserted into the opening of the guide bush so that the auxiliary electrode made of the first intermediate layer material is inserted into the vacuum chamber. The guide bush is connected to the ground potential, the inside of the vacuum chamber is evacuated, an AC voltage is applied to the auxiliary electrode from the auxiliary electrode power source, and a first intermediate portion is formed on the inner peripheral surface of the guide bush by the resistance heating vapor deposition method. A guide bush is arranged in a vacuum chamber so that a layer is formed and an auxiliary electrode made of a material of the second intermediate layer is inserted. An AC voltage is applied to the auxiliary electrode from an auxiliary electrode power source, and the guide bush is formed by resistance heating evaporation. A second intermediate layer is formed on the inner peripheral surface of the guide bush, and then the guide bush is arranged in the vacuum chamber so that an auxiliary electrode connected to a ground potential or a positive DC voltage is inserted into the inner surface of the opening of the guide bush. After exhausting the vacuum chamber, a gas containing carbon is introduced into the vacuum chamber from the gas inlet, and high-frequency power is applied to the guide bush to generate plasma, thereby forming a hard carbon film on the guide bush. And

In the method of forming a coating on the inner peripheral surface of the guide bush according to the present invention, the guide bush is connected to an auxiliary electrode power supply and inserted into the opening of the guide bush so that the auxiliary electrode made of the first intermediate layer material is inserted into the vacuum chamber. The guide bush is connected to the ground potential, the inside of the vacuum chamber is evacuated, an AC voltage is applied to the auxiliary electrode from the auxiliary electrode power source, and a first intermediate portion is formed on the inner peripheral surface of the guide bush by the resistance heating vapor deposition method. A guide bush is arranged in a vacuum chamber so that a layer is formed and an auxiliary electrode made of a material of the second intermediate layer is inserted. An AC voltage is applied to the auxiliary electrode from an auxiliary electrode power source, and the guide bush is formed by resistance heating evaporation. A second intermediate layer is formed on the inner peripheral surface of the guide bush, and then the guide bush is arranged in the vacuum chamber so that an auxiliary electrode connected to a ground potential or a positive DC voltage is inserted into the inner surface of the opening of the guide bush. After evacuating the vacuum chamber, introducing a gas containing carbon into the vacuum chamber from a gas inlet, applying a DC voltage to the guide bush to generate plasma, and forming a hard carbon film on the guide bush. Features.

In the method of forming a coating on the inner peripheral surface of the guide bush according to the present invention, the guide bush is connected to an auxiliary electrode power supply in the opening of the guide bush and the guide bush is inserted into the vacuum chamber so as to insert the auxiliary electrode made of the first intermediate layer material. After evacuating the vacuum chamber, apply a negative DC voltage from a DC power supply to the guide bush, apply an AC voltage to the auxiliary electrode from the auxiliary electrode power supply, and apply resistance heating evaporation to the inner peripheral surface of the guide bush. A first intermediate layer is formed on the substrate, and a guide bush is arranged in the vacuum chamber so as to insert an auxiliary electrode made of a material of the second intermediate layer. A second intermediate layer is formed on the inner peripheral surface of the guide bush by vapor deposition, and then the guide bush is inserted into the inner surface of the opening of the guide bush so that an auxiliary electrode connected to a ground potential or a positive DC voltage is inserted. After evacuating the vacuum chamber, placing a gas containing carbon into the vacuum chamber from the gas inlet, applying a DC voltage to the guide bush, applying a DC voltage to the anode, and applying AC to the filament. It is characterized in that a hard carbon film is formed on a guide bush by applying a voltage to generate plasma.

According to the method of forming a coating on the inner peripheral surface of the guide bush of the present invention, the guide bush is connected to an auxiliary electrode power supply and inserted into the opening of the guide bush so that the auxiliary electrode made of the first intermediate layer material is inserted into the vacuum chamber. After evacuating the vacuum chamber, apply a negative DC voltage from a DC power supply to the guide bush, apply an AC voltage to the auxiliary electrode from the auxiliary electrode power supply, and apply resistance heating evaporation to the inner peripheral surface of the guide bush. A first intermediate layer is formed on the substrate, and a guide bush is arranged in the vacuum chamber so as to insert an auxiliary electrode made of a material of the second intermediate layer. A second intermediate layer is formed on the inner peripheral surface of the guide bush by vapor deposition, and then the guide bush is inserted into the inner surface of the opening of the guide bush so that an auxiliary electrode connected to a ground potential or a positive DC voltage is inserted. After evacuating the vacuum chamber, introducing gas containing carbon into the vacuum chamber from the gas inlet, applying high-frequency power to the guide bush to generate plasma, The method is characterized in that a film is formed.

In the method of forming a coating on the inner peripheral surface of the guide bush according to the present invention, the guide bush is connected to an auxiliary electrode power source in the opening of the guide bush and the guide bush is inserted into the vacuum chamber so as to insert the auxiliary electrode made of the first intermediate layer material. After evacuating the vacuum chamber, apply a negative DC voltage from a DC power supply to the guide bush, apply an AC voltage to the auxiliary electrode from the auxiliary electrode power supply, and apply resistance heating evaporation to the inner peripheral surface of the guide bush. A first intermediate layer is formed on the substrate, and a guide bush is arranged in the vacuum chamber so as to insert an auxiliary electrode made of a material of the second intermediate layer. A second intermediate layer is formed on the inner peripheral surface of the guide bush by vapor deposition, and then the guide bush is inserted into the inner surface of the opening of the guide bush so that an auxiliary electrode connected to a ground potential or a positive DC voltage is inserted. After evacuating the vacuum chamber, introducing a gas containing carbon into the vacuum chamber from the gas inlet, applying a DC voltage to the guide bush to generate plasma, The method is characterized in that a film is formed.

According to the method of forming a coating on the inner peripheral surface of the guide bush of the present invention, the guide bush is connected to an auxiliary electrode power source in the opening of the guide bush and the guide bush is inserted into the vacuum chamber so as to insert the auxiliary electrode made of the first intermediate layer material. The guide bush is connected to the ground potential, and after evacuation of the vacuum chamber, a sputter gas is introduced from the gas inlet, high frequency power is applied from the auxiliary electrode power source to the auxiliary electrode, and the inside of the guide bush is opened. Plasma is generated around the auxiliary electrode to form a first intermediate layer on the inner peripheral surface of the guide bush, and the guide bush is arranged in the vacuum chamber so as to insert the auxiliary electrode made of the second intermediate layer material, High frequency power is applied to the auxiliary electrode from the auxiliary electrode power source to generate plasma around the auxiliary electrode in the opening of the guide bush, thereby forming a second intermediate layer on the inner peripheral surface of the guide bush. The guide bush is placed in the vacuum chamber so that the auxiliary electrode connected to the ground potential or DC positive voltage is inserted into the inner surface of the opening of the bush, and after evacuating the vacuum chamber, the gas containing carbon is supplied from the gas inlet to the vacuum chamber. And a DC voltage is applied to the guide bush, a DC voltage is applied to the anode, an AC voltage is applied to the filament to generate plasma, and a hard carbon film is formed on the guide bush.

According to the method of forming a coating on the inner peripheral surface of the guide bush of the present invention, the guide bush is connected to an auxiliary electrode power source in the opening of the guide bush and the guide bush is inserted into the vacuum chamber so as to insert the auxiliary electrode made of the first intermediate layer material. The guide bush is connected to the ground potential, and after evacuation of the vacuum chamber, a sputter gas is introduced from the gas inlet, high frequency power is applied from the auxiliary electrode power source to the auxiliary electrode, and the inside of the guide bush is opened. Plasma is generated around the auxiliary electrode to form a first intermediate layer on the inner peripheral surface of the guide bush, and the guide bush is arranged in the vacuum chamber so as to insert the auxiliary electrode made of the second intermediate layer material, High frequency power is applied to the auxiliary electrode from the auxiliary electrode power source to generate plasma around the auxiliary electrode in the opening of the guide bush, thereby forming a second intermediate layer on the inner peripheral surface of the guide bush. The guide bush is placed in the vacuum chamber so that the auxiliary electrode connected to the ground potential or DC positive voltage is inserted into the inner surface of the bush, and after exhausting the vacuum chamber, the gas containing carbon is evacuated from the gas inlet. A hard carbon film is formed on the guide bush by introducing the guide bush and applying high frequency power to the guide bush to generate plasma.

According to the method of forming a coating on the inner peripheral surface of the guide bush of the present invention, the guide bush is connected to the auxiliary electrode power supply in the opening of the guide bush and the guide bush is inserted into the vacuum chamber so as to insert the auxiliary electrode made of the first intermediate layer material. The guide bush is connected to the ground potential, and after evacuation of the vacuum chamber, a sputter gas is introduced from the gas inlet, high frequency power is applied from the auxiliary electrode power source to the auxiliary electrode, and the inside of the guide bush is opened. Plasma is generated around the auxiliary electrode to form a first intermediate layer on the inner peripheral surface of the guide bush, and the guide bush is arranged in the vacuum chamber so as to insert the auxiliary electrode made of the second intermediate layer material, High frequency power is applied to the auxiliary electrode from the auxiliary electrode power source to generate plasma around the auxiliary electrode in the opening of the guide bush, thereby forming a second intermediate layer on the inner peripheral surface of the guide bush. The guide bush is placed in the vacuum chamber so that the auxiliary electrode connected to the ground potential or DC positive voltage is inserted into the inner surface of the bush, and after exhausting the vacuum chamber, the gas containing carbon is evacuated from the gas inlet. The method is characterized in that a hard carbon film is formed on the guide bush by introducing the guide bush into the tank and applying a DC voltage to the guide bush to generate plasma.

The method for forming a coating on the inner peripheral surface of the guide bush according to the present invention is characterized in that the guide bush is connected to an auxiliary electrode power supply and inserted into the opening of the guide bush so that the auxiliary electrode made of the first intermediate layer material is inserted into the vacuum chamber. After evacuating the vacuum chamber, a sputtering gas is introduced from the gas inlet, a DC negative voltage is applied to the guide bush from a DC power supply, and a high-frequency power is applied to the auxiliary electrode from the auxiliary electrode power supply. Plasma is generated around the auxiliary electrode in the opening of the guide bush to form a first intermediate layer on the inner peripheral surface of the guide bush,
The guide bush is placed in the vacuum chamber so that the auxiliary electrode made of the intermediate layer material is inserted, and high frequency power is applied to the auxiliary electrode from the auxiliary electrode power source to generate plasma around the auxiliary electrode in the guide bush opening. Then, a second intermediate layer is formed on the inner peripheral surface of the guide bush, and then the guide bush is arranged in the vacuum chamber so that an auxiliary electrode connected to a ground potential or a positive DC voltage is inserted into the inner surface of the opening of the guide bush. After evacuation of the vacuum chamber, a gas containing carbon is introduced into the vacuum chamber from the gas inlet, a DC voltage is applied to the guide bush, a DC voltage is applied to the anode, and an AC voltage is applied to the filament to generate plasma. It is characterized in that a hard carbon film is formed on the guide bush by generating.

In the method of forming a coating on the inner peripheral surface of the guide bush according to the present invention, the guide bush is connected to an auxiliary electrode power source in the opening of the guide bush and the guide bush is inserted into the vacuum chamber so as to insert the auxiliary electrode made of the first intermediate layer material. After evacuating the vacuum chamber, a sputtering gas is introduced from the gas inlet, a DC negative voltage is applied to the guide bush from a DC power supply, and a high-frequency power is applied to the auxiliary electrode from the auxiliary electrode power supply. Plasma is generated around the auxiliary electrode in the opening of the guide bush to form a first intermediate layer on the inner peripheral surface of the guide bush,
The guide bush is placed in the vacuum chamber so that the auxiliary electrode made of the intermediate layer material is inserted, and a DC negative voltage is applied to the auxiliary electrode from the auxiliary electrode power source to generate plasma around the auxiliary electrode in the opening of the guide bush. Then, a second intermediate layer is formed on the inner peripheral surface of the guide bush, and then the guide bush is inserted into the vacuum chamber so that an auxiliary electrode connected to a ground potential or a DC positive voltage is inserted into the inner surface of the opening of the guide bush. After arranging and evacuating the vacuum chamber, introducing a gas containing carbon from the gas inlet into the vacuum chamber, applying high-frequency power to the guide bush to generate plasma, and forming a hard carbon film on the guide bush. It is characterized by.

In the method of forming a coating on the inner peripheral surface of the guide bush according to the present invention, the guide bush is connected to an auxiliary electrode power source in the opening of the guide bush and the guide bush is inserted into the vacuum chamber so as to insert the auxiliary electrode made of the first intermediate layer material. After evacuating the vacuum chamber, a sputtering gas is introduced from the gas inlet, a DC negative voltage is applied to the guide bush from a DC power supply, and a high-frequency power is applied to the auxiliary electrode from the auxiliary electrode power supply. Plasma is generated around the auxiliary electrode in the opening of the guide bush to form a first intermediate layer on the inner peripheral surface of the guide bush,
The guide bush is placed in the vacuum chamber so that the auxiliary electrode made of the intermediate layer material is inserted, and high frequency power is applied to the auxiliary electrode from the auxiliary electrode power source to generate plasma around the auxiliary electrode in the guide bush opening. Then, a second intermediate layer is formed on the inner peripheral surface of the guide bush, and then the guide bush is arranged in the vacuum chamber so that an auxiliary electrode connected to a ground potential or a DC positive voltage is inserted into the inner surface of the opening of the guide bush. After evacuation of the vacuum chamber, a gas containing carbon is introduced into the vacuum chamber from the gas inlet, and a DC voltage is applied to the guide bush to generate plasma to form a hard carbon film on the guide bush. Features.

[Operation] In the method for forming a film on the inner peripheral surface of the guide bush of the present invention, an auxiliary electrode connected to a ground potential or a positive DC voltage is disposed at the center of the inner surface of the guide bush. A carbon film is formed. Then, a negative DC voltage or a high-frequency power is applied to the guide bush forming the hard carbon film.

As a result, an auxiliary electrode connected to the ground potential or the DC positive voltage is provided on the inner surface of the opening where the electrodes of the same potential face each other, so that the same potentials do not face each other.

Such a potential state is the most desirable state for plasma enhanced chemical vapor deposition, and a hollow discharge, which is an abnormal discharge, does not occur. Therefore, a hard carbon film having good adhesion can be formed on the guide bush.

Further, in the method for forming a hard carbon film according to the present invention, the auxiliary electrode connected to the ground potential or the DC positive voltage is arranged on the inner surface of the opening of the guide bush, and the potential characteristics are formed on the inner surface of the opening in the longitudinal direction of the guide bush. Becomes uniform.

As a result, there is no occurrence of a film thickness distribution of the hard carbon film formed on the inner peripheral surface, and it is possible to form a hard carbon film having a uniform film thickness over the entire area between the opening end face and the back side of the guide bush. It also has the effect of being able to.

Further, in the method for forming a coating on the inner peripheral surface of the guide bush of the present invention, a DC positive voltage is applied to the auxiliary electrode disposed on the inner surface of the opening of the guide bush to form a hard carbon film.

When a DC positive voltage is applied to the auxiliary electrode in this manner, an effect of collecting electrons in the region around the auxiliary electrode is produced, and the region around the auxiliary electrode has a high electron density. When the electron density increases in this way, the collision probability between the gas molecules containing carbon and the electrons necessarily increases, ionization of the gas molecules is promoted, and the plasma density around the auxiliary electrode increases.

For this reason, in the embodiment in which a DC positive voltage is applied to the auxiliary electrode to form the hard carbon film, the film forming speed of the hard carbon film is determined when the DC positive voltage is not applied to the auxiliary electrode. It is higher than that.

Further, when the size of the opening of the guide bush is reduced and the gap between the inner surface of the opening and the auxiliary electrode is reduced, when the hard carbon film is formed without applying a DC positive voltage to the auxiliary electrode, the opening of the guide bush is reduced. No plasma is generated on the inner surface, and a film cannot be formed.

On the other hand, in the method of forming a hard carbon film by applying a DC positive voltage to the auxiliary electrode, a DC positive voltage is applied from a DC power supply to the auxiliary electrode disposed on the inner surface of the opening to forcibly generate electrons. It can be collected in the area around the auxiliary electrode. Therefore, plasma can be generated around the auxiliary electrode.

Therefore, a guide bush having a small opening size cannot be formed by the method of forming a hard carbon film without applying a DC positive voltage to the auxiliary electrode, and the coating can be formed by using the auxiliary electrode applying the DC positive voltage. By applying the forming method, a hard carbon film can be formed.

Further, in the method of forming an intermediate layer below a hard carbon film according to the present invention, an auxiliary electrode made of an intermediate layer material is disposed in an opening of a guide bush.
Plasma is generated between the auxiliary electrode and the inner surface of the opening, or an intermediate layer is formed on the inner peripheral surface of the guide bush by resistance heating evaporation.

Therefore, the intermediate layer can be formed with a uniform thickness over the entire inner surface of the opening of the guide bush. Therefore, peeling of the hard carbon film due to the reduction in the thickness of the intermediate layer does not occur.

For the above reasons, in the film forming method of the present invention, the adhesion of the hard carbon film to the guide bush is improved.

[0079]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The preferred embodiments of the present invention for implementing a method for forming a coating on the inner peripheral surface of a guide bush will be described below with reference to the drawings.

[Description of the structure of the guide bush device to which the guide bush is applied: FIG. 8] Before describing the method of forming the hard carbon film on the inner peripheral surface of the guide bush in the embodiment of the present invention, this guide bush is applied. The configuration of a guide bush device to which a guide bush is applied will be described with reference to FIG.
FIG. 8 is a sectional view showing a fixed type guide bush device which is used as a guide bush device in a state where the guide bush is fixed and a workpiece rotates on the inner peripheral surface of the guide bush.

The headstock 17 is slidable on the bed (not shown) of a numerically controlled automatic lathe (not shown) in the left-right direction of FIG. The headstock 17 is provided with a spindle 19 rotatably supported by a bearing 21. A collet chuck 13 is provided at the tip of the spindle 19.
Is installed.

The collet chuck 13 is disposed in the center hole of the chuck sleeve 41. The outer tapered surface 13a at the tip of the collet chuck 13 and the inner tapered surface 41a of the chuck sleeve 41 are in surface contact with each other.

Further, a spring 25 is provided at the rear end of the collet chuck 13 in the intermediate sleeve 29. And
The collet chuck 13 can be pushed out of the intermediate sleeve 29 by the action of the elastic force of the spring 25.

The position of the tip of the collet chuck 13 is in contact with a cap nut 27 screwed to the tip of the main shaft 19 to regulate the position. This cap nut 27
Is provided to prevent the collet chuck 13 from jumping out of the intermediate sleeve 29 due to the spring force of the spring 25.

At the rear end of the intermediate sleeve 29, a chuck opening / closing mechanism 31 is provided via the intermediate sleeve 29.
By opening and closing the chuck opening / closing claw 33,
The collet chuck 13 opens and closes, and can grip and release the workpiece 51.

That is, when the distal ends of the chuck opening / closing claws 33 of the chuck opening / closing mechanism 31 move so as to open each other,
The portion of the chuck opening / closing claw 33 in contact with the intermediate sleeve 29 moves leftward in FIG. 11 and pushes the intermediate sleeve 29 leftward. As the intermediate sleeve 29 moves leftward, the chuck sleeve 41 that is in contact with the left end of the intermediate sleeve 29 moves leftward.

The collet chuck 13 is prevented from protruding forward from the main shaft 19 by the cap nut 27 screwed to the tip of the main shaft 19 as described above. Therefore, by the movement of the chuck sleeve 41 to the left, the outer taper 13a of the collet chuck 13 and the inner taper 41a of the chuck sleeve 41 are strongly pushed and move along the tapered surface.
As a result, the diameter of the inner peripheral surface of the collet chuck 13 is reduced, and the workpiece 51 can be gripped.

When the workpiece 51 is released by increasing the diameter of the inner peripheral surface of the collet chuck 13, the distal ends of the chuck opening / closing claws 33 are moved so as to close each other, so that the chuck sleeve 41 is moved to the left. Excluding the pushing force in the direction. Then, the intermediate sleeve 29 and the chuck sleeve 41 move rightward in FIG. 8 by the restoring force of the spring 25.

Therefore, the pressing force between the outer tapered surface 13a of the collet chuck 13 and the inner tapered surface 41a of the chuck sleeve 41 is eliminated. As a result, the diameter of the inner peripheral surface of the collet chuck 13 is increased by its own elastic force, and the workpiece 51 can be released.

Further, at the front position of the headstock 17, a fixed type guide bush device 37 arranged on the center line of the main shaft of the column 35 is provided. Guide bush device 37 shown in FIG.
As described above, the fixed type guide bush device 3 is used in a state where the guide bush 11 is fixed and the workpiece 51 is rotated on the inner peripheral surface 11b of the guide bush 11.
The bush sleeve 23 is disposed in the center hole of the holder 39 fixed to the column 35. An inner peripheral tapered surface 23a is provided at the tip of the bush sleeve 23.

In the center hole of the bush sleeve 23, a guide bush 11 having a tapered outer peripheral surface 11a at the end is disposed.

By rotating the adjustment nut 43 provided at the rear end of the guide bush device 37, the gap between the inner diameter of the guide bush 11 and the outer shape of the workpiece 51 can be adjusted. When the adjustment nut 43 is rotated, the inner peripheral taper surface 23a of the bush sleeve 23 and the outer peripheral taper surface 11a of the guide bush 11 become the inner peripheral taper surface 23a and the outer peripheral taper surface 1 like the collet chuck 13.
1a are mutually pressed and the inner diameter of the guide bush 11 is reduced.

A cutting tool 45 is provided further forward of the guide bush device 37. The workpiece 51 is gripped by the collet chuck 13 of the spindle 19 and supported by the guide bush device 37.
The workpiece 51 protruding into the processing area through the workpiece 7 is cut into a predetermined shape by a combined movement of the forward and backward movement of the cutting tool 45 and the movement of the headstock 17.

[Explanation of the structure of another guide bush device to which the guide bush is applied: FIG. 9] Next, FIG. 9 shows the structure of a rotary type guide bush device that is used while rotating a guide bush for gripping a workpiece. This will be described with reference to FIG. FIG. 9 is a cross-sectional view showing a configuration of a rotary type guide bush device. In FIG. 9, the same parts as those in FIG. 8 are denoted by the same reference numerals.

The rotary type guide bush device includes a guide bush device in which the collet chuck 13 and the guide bush 11 rotate in synchronization, and a guide bush device in which the collet chuck 13 and the guide bush 11 rotate without synchronization. The guide bush device 37 shown in FIG. 9 is a rotary type guide bush device 37 in which the collet chuck 13 and the guide bush 11 rotate in synchronization.

The rotary type guide bush device 37 includes a rotary drive rod 4 protruding from the cap nut 27 of the main shaft 19.
7, the guide bush device 37 is driven. In addition to the drive by the rotary drive rod 47, there is also a drive that drives the guide bush device 37 by a gear or a belt pulley.

This rotary type guide bush device 37 is
The center hole of the holder 39 fixed to the column 35 is provided with the bearing 21.
The bush sleeve 23 is arranged so as to be rotatable via the. Further, the guide bush 11 is arranged in the center hole of the bush sleeve 23.

Bush sleeve 23 and guide bush 1
1 is the same structure as the structure described using FIG.
The guide bush 11 is rotated by rotating an adjustment nut 43 provided at the rear end of the guide bush device 37.
Of the guide bush 11 and the outer diameter of the workpiece 51 can be adjusted.

The configuration of the guide bush device described with reference to FIG. 9 is the same as the configuration described with reference to FIG. 8 except that the guide bush device 37 is a rotary type. Omitted.

[Description of the structure of the guide bush forming the intermediate layer and the hard carbon film: FIG. 10] Next, the structure of the guide bush forming the intermediate layer and the hard carbon film on the inner peripheral surface in the embodiment of the present invention will be described. This will be described with reference to the sectional view of FIG. As is apparent from the above description, the fixed type guide bush and the rotary type guide bush have substantially the same structure and operate in the same manner.

FIG. 10 is a sectional view showing a guide bush according to the embodiment of the present invention, and the guide bush shown in FIG. 10 shows an open and free state. As shown in the drawing, the guide bush 11 has an outer peripheral tapered surface 11a at an outer peripheral portion at one end in a longitudinal direction, and a screw portion 11f at an outer peripheral portion at the other end.
With.

Further, a penetrating opening having a different opening diameter is provided at the center of the guide bush 11. An inner peripheral surface 11b for holding the workpiece 51 is provided on the inner periphery on the side where the outer peripheral tapered surface 11a is provided. In the area other than the inner peripheral surface 11b, a step portion 11g having an inner diameter larger than the inner diameter of the inner peripheral surface 11b is formed.

Further, the guide bush 11 is provided with a slit 11c from the outer peripheral tapered surface 11a to the spring portion 11d. The slits 11c are provided at three places at intervals of 120 °.

When the outer peripheral taper surface 11a of the guide bush 11 is pressed against the inner peripheral taper surface of the bush sleeve, the spring portion 11d bends, and the gap between the inner peripheral surface 11b and the workpiece 51 can be adjusted. it can.

Further, the guide bush 11 has a spring 1
A fitting portion 11e is provided between 1d and the screw portion 11f. The guide bush 11 is formed by the fitting portion 11e.
Can be arranged on the centerline of the spindle and parallel to the centerline of the spindle.

The guide bush 11 is made of alloy tool steel (SKS). After forming the outer shape and the inner shape, quenching and tempering are performed. Further, a superhard member having a thickness of 2 mm to 5 mm is fixed to the inner peripheral surface 11b of the guide bush 11 by brazing means to form a superhard member 12. The super hard member 12 has a composition of 85% to 90% of tungsten (W), 5% to 7% of carbon (C), and 3% to 10% of cobalt (Co) as a binder. The guide bush 11 having no super hard member 12 on the inner peripheral surface thereof
Also depends on the application.

When the guide bush 11 is open, a gap of 5 μm to 10 μm is provided in the radial direction between the inner peripheral surface 11b and the workpiece 51. For this reason, abrasion of the inner peripheral surface 11b of the guide bush 11 due to entry and exit of the workpiece 51 poses a problem. Furthermore, the guide bush 11 slides at a high speed between the inner peripheral surface 11b and the workpiece 51 as described above,
In addition, there is a problem that image sticking occurs due to excessive pressing force of the workpiece 51 against the inner peripheral surface 11b due to the cutting load. Therefore, the hard carbon film 15 is formed on the inner peripheral surface 11b of the guide bush 11.

[Description of Method of Forming Intermediate Layer: FIG. 1] Next, a method of forming an intermediate layer formed below the hard carbon film will be described with reference to FIG. FIG. 1 is a sectional view showing a method for forming an intermediate layer in a method for forming a film according to an embodiment of the present invention. In the following description, an embodiment in which a titanium-silicon alloy is formed as an intermediate layer will be described.

As shown in FIG. 1, a guide bush 11 having an opening is disposed in a vacuum chamber 61 having a gas inlet 63 and an exhaust port 65. This guide bush 11 is connected to the ground potential.

An auxiliary electrode 71 made of a titanium-silicon alloy material to be formed as an intermediate layer is arranged so as to be inserted substantially in the center of the opening of the guide bush 11. An auxiliary electrode power supply 83a for applying a DC voltage is connected to the auxiliary electrode 71. Further, the ratio of silicon of the auxiliary electrode 71 made of the titanium-silicon alloy material is set to 30 wt% to 70 wt%.

Then, the inside of the vacuum chamber 61 is evacuated to a degree of vacuum of 3 × 10 ⁻⁵ torr by an evacuation unit (not shown). Thereafter, an argon gas is introduced into the vacuum chamber 61 as a sputtering gas from the gas inlet 63, and the degree of vacuum is controlled to 5 × 10 ⁻³ torr.

Further, minus 5 from the auxiliary electrode power supply 83a.
A DC voltage of 00 V is applied to the auxiliary electrode 71. Then, plasma is generated in the opening of the guide bush 11 and in a region around the auxiliary electrode 71, and ions in the plasma sputter the surface of the auxiliary electrode 71 made of a titanium-silicon alloy material.

The guide bush 11 has an opening inside diameter of 10 mm, and the auxiliary electrode 71 made of a titanium-silicon alloy has a diameter of 2 mm. The sectional shape of the auxiliary electrode 71 is not limited to a circle, but may be a polygon.

The intermediate layer material that has been knocked out from the surface of the auxiliary electrode 71 adheres to the guide bush 11,
An intermediate layer made of a titanium-silicon alloy material can be formed on the inner peripheral surface of the guide bush 11. This sputtering process is performed for 30 minutes to form an intermediate layer made of a 0.5 μm thick titanium-silicon alloy film on the inner peripheral surface of the guide bush 11.

As described above, in the method of forming the intermediate layer according to the embodiment of the present invention, the auxiliary electrode 71 made of the intermediate layer material is disposed in the opening of the guide bush 11 so that the auxiliary electrode 71 and the inner peripheral surface of the guide bush 11 can be formed. During this time, an intermediate layer is formed on the inner peripheral surface of the guide bush 11. Since the plasma formed by arranging the auxiliary electrode 71 made of the intermediate layer material in the opening of the guide bush 11 is uniform in the longitudinal direction of the guide bush 11, the inner layer of the guide bush 11 has a uniform thickness on the inner peripheral surface. Can be formed.

The thickness distribution of the intermediate layer formed by the method for forming an intermediate layer of the present invention shown in FIG. 1 will be described with reference to the graph of FIG. In the graph of FIG. 5, the horizontal axis represents the distance from the opening end of the guide bush, and the vertical axis represents the thickness of the intermediate layer formed on the inner peripheral surface of the guide bush. And curve 85
Shows a film thickness distribution when formed by the method for forming an intermediate layer of the present invention shown in FIG.

As shown by the curve 85 in the graph of FIG. 5, when the intermediate layer having a thickness of 0.5 μm was formed at the opening end of the guide bush, the intermediate layer formed by the method shown in FIG.
There is almost no change in the film thickness even at a position 30 mm from the end of the opening to the back of the opening, and an intermediate layer made of a titanium-silicon alloy film can be formed with a uniform thickness over the entire opening of the guide bush 11.

[Description of Method for Forming Hard Carbon Film: FIG.
3 and 4] Then, a hard carbon film is formed on the guide bush 11 on which the intermediate layer is formed. There are three methods for forming the hard carbon film, which will be described with reference to FIGS. 2, 3, and 4, respectively. First, a method for forming a hard carbon film will be described with reference to FIG. FIG.
FIG. 3 is a cross-sectional view illustrating a method for forming a hard carbon film formed on the upper surface of the intermediate layer in the method for forming a film according to the embodiment of the present invention.

[First Example of Method for Forming Hard Carbon Film: FIG. 2] As shown in FIG. 2, a guide for forming a hard carbon film in a vacuum chamber 61 having a gas inlet 63 and an exhaust port 65. The bush 11 is arranged. An auxiliary electrode 71 connected to the ground potential is provided on the inner surface of the opening of the guide bush 11 so as to be inserted. At this time, the auxiliary electrode 7
The guide bush 11 is arranged so that 1 is located at the center of the opening.

Then, the degree of vacuum in the vacuum chamber 61 is 3 × 10 ^−5.
Vacuum is exhausted from the exhaust port 65 by an exhaust means (not shown) so that the pressure becomes torr.

Thereafter, benzene (C 6 H 6) as a gas containing carbon is introduced into the vacuum chamber 61 from the gas inlet 63 to control the pressure in the vacuum chamber 61 to 5 × 10 ⁻³ torr.

The anode 79 has an anode power supply 75.
, And an AC voltage is applied to the filament 81 from the filament power supply 77. At this time, a plus DC voltage of 10 V is applied from the anode power supply 75 to the anode 79. Furthermore, the voltage applied from the filament power supply 77 to the filament 81 is 3
An AC voltage of 10 V is applied so that a current of 0 A flows.

The guide bush 11 has a DC power source 7.
From step 3, a DC voltage is applied. At this time, guide bush 1
1 is applied with −3 kV from the DC power supply 73.

Then, a plasma is generated in a region around the guide bush 11 arranged in the vacuum chamber 61, and a hard carbon film is formed on the guide bush 11. The thickness of the hard carbon film formed on the inner peripheral surface of the guide bush 11 may be 1 μm to 5 μm.

In the method of forming a hard carbon film shown in FIG. 2, the auxiliary bushing 71 is disposed so as to be inserted into the inner surface of the opening of the guide bush 11 and connected to the ground voltage.
Plasma can be formed not only on the outer peripheral portion of the guide bush 11 but also on the inner surface of the guide bush 11 opening.

As described above, in the method of forming a hard carbon film according to the present invention, the film forming process is performed by arranging the auxiliary electrode 71 to be inserted into the inner surface of the opening of the guide bush 11. For this reason, the auxiliary electrode 71 connected to the ground potential is provided on the inner surface of the opening where the same potentials are opposed to each other, so that the hollow discharge which is an abnormal discharge does not occur, and the adhesion of the hard carbon film is improved.

Further, on the inner surface of the opening in the longitudinal direction of the guide bush 11, the electric potential characteristics become uniform, there is no occurrence of the film thickness distribution of the hard carbon film formed on the inner peripheral surface, and the guide between the opening end surface and the back side of the opening is formed. The bush 11 can be formed with a uniform film thickness over the entire opening.

In addition, as described above, the intermediate layer formed below the hard carbon film can also be formed with a uniform film thickness on the open end face of the guide bush 11 and on the back side thereof. Therefore, peeling of the hard carbon film due to stress does not occur.

For such reasons, in the method of forming the intermediate layer and the hard carbon film of the present invention, the adhesion of the hard carbon film to the guide bush 11 is improved.

The auxiliary electrode 71 is connected to the guide bush 11
It is sufficient that the size is smaller than the opening size, and a plasma forming region which is preferably a gap of about 4 mm is provided.
The diameter of the auxiliary electrode 71 and the inner peripheral surface 1 of the guide bush 11
It is desirable that the dimensional ratio of the diameter of 1b be 1/10 or less, and when the auxiliary electrode 71 is made thinner, it can be made linear. The auxiliary electrode 71 for forming the hard carbon film is formed continuously with the intermediate layer using an intermediate layer material, or a metal material such as stainless steel, tungsten (W) or tantalum (Ta). What is necessary is just to form with a high melting point metal material like this.

The sectional shape of the auxiliary electrode 71 is circular. Then, when the auxiliary electrode 71 is inserted into the opening of the guide bush 11, the length is set so as to be aligned with the end face of the opening of the guide bush 11, or is set so as to protrude from the end face of the guide bush 11. Alternatively, the length of the guide bush 11 is set to be 1 mm to 2 mm behind the end face without protruding from the end face.

[Description of Second Example of Method of Forming Hard Carbon Film: FIG. 3] Next, a method of forming a hard carbon film according to an embodiment of the present invention which is different from the above description will be described with reference to FIG. FIG. 3 is a cross-sectional view showing a method for forming a hard carbon film formed on the upper surface of the intermediate layer in the method for forming a film according to the embodiment of the present invention.

As shown in FIG. 3, an intermediate layer is formed on the inner peripheral surface in a vacuum chamber 61 having a gas inlet 63 and an exhaust port 65, and a hard carbon film is formed on the upper surface of the intermediate layer. The guide bush 11 is arranged.

In the opening of the guide bush 11, an auxiliary electrode 71 connected to the ground potential is provided so as to be inserted. At this time, the auxiliary electrode 71 is
1 is arranged so as to be substantially at the center of the opening.

Then, the inside of the vacuum chamber 61 is evacuated from the exhaust port 65 to a degree of vacuum of 3 × 10 ⁻⁵ torr by an exhaust means (not shown).
Evacuate to r.

Thereafter, methane (CH 4) as a gas containing carbon is introduced into the vacuum chamber 61 from the gas inlet 63 to adjust the degree of vacuum to 0.1 torr.

Then, 400 W of high frequency power is applied to the guide bush 11 from a high frequency power source 69 having an oscillation frequency of 13.56 MHz via a matching circuit 67.

Further, on the inner surface of the opening of the guide bush 11,
In addition, an auxiliary electrode 7 for connecting a ground voltage is provided at the center of the opening.
1 to insert, generate plasma,
A hard carbon film is formed. The thickness of the hard carbon film formed on the inner peripheral surface of the guide bush 11 is 1 μm to 5 μm.
It may be formed with a thickness of μm.

In the method of forming a hard carbon film shown in FIG. 3, the auxiliary electrode 71 is arranged so as to be inserted into the inner surface of the opening of the guide bush 11 and connected to the ground voltage.
Plasma can be formed not only on the outer peripheral portion of the guide bush 11 but also on the inner surface of the guide bush 11 opening.

As described above, in the method for forming a hard carbon film according to the present invention, the auxiliary electrode 71 inserted into the inner surface of the opening of the guide bush 11 is disposed to perform the film forming process. For this reason, an auxiliary electrode connected to the ground potential is provided on the inner surface of the opening where the same potentials are opposed to each other, so that the hollow discharge which is an abnormal discharge does not occur, and the adhesion of the hard carbon film is improved.

Furthermore, the potential characteristics are uniform on the inner surface of the opening in the longitudinal direction of the guide bush 11, the thickness distribution of the hard carbon film formed on the inner peripheral surface does not occur, and the guide between the opening end surface and the back side of the opening is formed. A uniform film thickness can be formed over the entire opening of the bush 11.

Further, as described above, the intermediate layer formed below the hard carbon film can also have a uniform film thickness on the open end face of the guide bush 11 and on the back side. Therefore, peeling of the hard carbon film due to stress does not occur.

For the reasons described above, in the method for forming the intermediate layer and the hard carbon film of the present invention, the adhesion of the hard carbon film to the guide bush 11 is improved.

The auxiliary electrode 71 is connected to the guide bush 11
It is sufficient that the size is smaller than the opening size, and a plasma forming region which is preferably a gap of about 4 mm is provided.
The diameter of the auxiliary electrode 71 and the inner peripheral surface 1 of the guide bush 11
It is desirable that the dimensional ratio of the diameter of 1b be 1/10 or less, and when the auxiliary electrode 71 is made thinner, it can be made linear. The auxiliary electrode 71 for forming the hard carbon film is formed continuously with the intermediate layer using an intermediate layer material, or a metal material such as stainless steel, tungsten (W) or tantalum (Ta). What is necessary is just to form with a high melting point metal material like this.

The sectional shape of the auxiliary electrode 71 is circular. Then, when the auxiliary electrode 71 is inserted into the opening of the guide bush 11, the length is set so as to be aligned with the end face of the opening of the guide bush 11, or is set so as to protrude from the end face of the guide bush 11. Alternatively, the length of the guide bush 11 is set to be 1 mm to 2 mm behind the end face without protruding from the end face.

[Third Example of Method of Forming Hard Carbon Film: FIG. 4] Next, a method of forming a hard carbon film according to an embodiment of the present invention which is different from the above description will be described with reference to FIG. FIG. 4 is a cross-sectional view showing a method for forming a hard carbon film formed on the upper surface of the intermediate layer in the method for forming a film according to the embodiment of the present invention.

As shown in FIG. 4, an intermediate layer is formed on the inner peripheral surface in a vacuum chamber 61 having a gas inlet 63 and an exhaust port 65, and a hard carbon film is formed on the upper surface of the intermediate layer. Guide bush 11 is arranged.

An auxiliary electrode 71 connected to the ground potential is provided on the inner surface of the opening of the guide bush 11. At this time, the auxiliary electrode 71 is
Is arranged at the center of the opening.

Then, the degree of vacuum in the vacuum chamber 61 is set to 3 × 10 ^−5.
Vacuum is exhausted from the exhaust port 65 by an exhaust means (not shown) so that the pressure becomes torr.

Thereafter, methane (CH4) as a gas containing carbon was introduced into the vacuum chamber 61 from the gas inlet 63,
The degree of vacuum in the vacuum chamber 61 is controlled to be 0.1 torr.

The guide bush 11 has a DC power source 7
From step 3, a DC voltage is applied. At this time, guide bush 1
1 is supplied with -600 V from the DC power supply 73,
A hard carbon film is formed. The thickness of the hard carbon film formed on the inner peripheral surface of the guide bush 11 is 1 μm to 5 μm.
It may be formed with a thickness of μm.

In the method of forming a hard carbon film shown in FIG. 4, the auxiliary bushing 71 is arranged so as to be inserted into the inner surface of the opening of the guide bush 11 and connected to the ground voltage.
Plasma can be formed not only on the outer peripheral portion of the guide bush 11 but also on the inner surface of the guide bush 11 opening.

As described above, in the method for forming a hard carbon film according to the present invention, the film forming process is performed by disposing the auxiliary electrode 71 to be inserted into the inner surface of the opening of the guide bush 11. For this reason, an auxiliary electrode connected to the ground potential is provided on the inner surface of the opening where the same potentials are opposed to each other, so that the hollow discharge which is an abnormal discharge does not occur, and the adhesion of the hard carbon film is improved.

Further, the potential characteristics are uniform on the inner surface of the opening in the longitudinal direction of the guide bush 11, and there is no occurrence of a film thickness distribution of the hard carbon film formed on the inner surface of the opening. The thickness can be formed.

In addition, the intermediate layer formed below the hard carbon film can also have a uniform film thickness on the open end face of the guide bush 11 and on the back side thereof as described above. Therefore, peeling of the hard carbon film due to stress does not occur.

For the reasons described above, in the method for forming the intermediate layer and the hard carbon film in the embodiment of the present invention, the adhesion of the hard carbon film to the guide bush 11 is improved.

The auxiliary electrode 71 is connected to the guide bush 11
It is sufficient that the size is smaller than the opening size, and a plasma forming region which is preferably a gap of about 4 mm is provided.
The diameter of the auxiliary electrode 71 and the inner peripheral surface 1 of the guide bush 11
It is desirable that the dimensional ratio of the diameter of 1b be 1/10 or less, and when the auxiliary electrode 71 is made thinner, it can be made linear. The auxiliary electrode 71 for forming the hard carbon film is formed continuously with the intermediate layer using an intermediate layer material, or a metal material such as stainless steel, tungsten (W) or tantalum (Ta). What is necessary is just to form with a high melting point metal material like this.

Further, the sectional shape of the auxiliary electrode 71 is circular. Then, when the auxiliary electrode 71 is inserted into the opening of the guide bush 11, the length is set so as to be aligned with the end face of the opening of the guide bush 11, or is set so as to protrude from the end face of the guide bush 11. Alternatively, the length of the guide bush 11 is set to be 1 mm to 2 mm behind the end face without protruding from the end face.

[Description of Second Example of Method for Forming Intermediate Layer: FIG. 6]
Next, a method of forming an intermediate layer on the inner peripheral surface of the guide bush in an embodiment different from the above description will be described with reference to FIG. FIG. 6 is a sectional view showing a method for forming an intermediate layer in the method for forming a film according to the present invention. The embodiment described with reference to FIG. 6 is a case where an intermediate layer is formed by a resistance heating evaporation method.

As shown in FIG. 6, a guide bush 11 having an opening is arranged in a vacuum chamber 61 having an exhaust port 65. This guide bush 11 is connected to the ground potential.

An auxiliary electrode 71 made of a titanium-silicon alloy material to be formed as an intermediate layer is arranged to be inserted into the opening of the guide bush 11. An auxiliary electrode power supply 83b for applying an AC voltage is connected to both ends of the auxiliary electrode 71. Further, the silicon ratio of the auxiliary electrode 71 made of this titanium-silicon alloy material is 3
0 wt% to 70 wt%.

Then, the inside of the vacuum chamber 61 is evacuated to a degree of vacuum of 3 × 10 ⁻⁵ torr by an exhaust means (not shown).

Further, an AC voltage is applied from the auxiliary electrode power supply 83b to the auxiliary electrode 71 so that a current of 2 A flows.
Then, the surface of the auxiliary electrode 71 disposed in the opening of the guide bush 11 is melted, and the degree of vacuum in the vacuum chamber 61 is high.
Can be formed on the inner peripheral surface by a resistance heating evaporation method.

The application of the AC voltage to the auxiliary electrode 71 is performed for the time 3
Perform for 0 minutes, and apply 0.5μ to the inner peripheral surface of the guide bush 11
An intermediate layer made of a titanium-silicon alloy film having a thickness of m is formed.

The guide bush 11 has an opening inside diameter of 10 mm, and the auxiliary electrode 71 made of a titanium-silicon alloy has a diameter of 2 mm. The sectional shape of the auxiliary electrode 71 is not limited to a circle, but may be a polygon.

As described above, in the method of forming the intermediate layer according to the embodiment of the present invention, the auxiliary electrode 71 made of the material of the intermediate layer is arranged in the opening of the guide bush 11, and the resistance heating for melting the surface of the auxiliary electrode 71 is performed. An intermediate layer is formed on the inner peripheral surface of the guide bush by a vapor deposition method. The molten state of the auxiliary electrode 71 made of the intermediate layer material is uniform in the longitudinal direction of the guide bush 11. Therefore, the intermediate layer can be formed on the inner peripheral surface of the guide bush 11 with a uniform thickness.

The thickness distribution of the intermediate layer formed by the method of forming an intermediate layer of the present invention using the resistance heating evaporation method shown in FIG. 6 will be described with reference to the graph of FIG. In the graph of FIG. 5, the horizontal axis indicates the distance from the open end of the guide bush,
The vertical axis indicates the thickness of the intermediate layer formed on the inner peripheral surface of the guide bush. A curve 85 shows the film thickness distribution when the intermediate layer is formed by the method of forming an intermediate layer shown in FIG.

As shown by the curve 85 in the graph of FIG. 5, when the intermediate layer having a thickness of 0.5 μm was formed at the opening end of the guide bush, the intermediate layer formed by the method shown in FIG.
There is almost no change in the film thickness even at a position 30 mm from the end of the opening to the back of the opening, and an intermediate layer made of a titanium-silicon alloy film can be formed with a uniform thickness over the entire opening of the guide bush 11.

In the method of forming the intermediate layer described with reference to FIG. 6, titanium-silicon is also applied by an ion plating method in which an argon gas is introduced from the gas inlet 63 into the vacuum chamber 61 to generate plasma. An intermediate layer made of an alloy can be formed.

After that, a hard carbon film is formed on the guide bush 11 on which the intermediate layer is formed. There are three methods for forming the hard carbon film, which will be described with reference to FIGS. 2, 3, and 4, respectively. First, a method for forming a hard carbon film will be described with reference to FIG. FIG. 2 is a cross-sectional view showing a method for forming a hard carbon film formed on the upper surface of the intermediate layer in the method for forming a film according to the embodiment of the present invention.

[First Example of Method for Forming Hard Carbon Film: FIG. 2] As shown in FIG. 2, a guide for forming a hard carbon film in a vacuum chamber 61 having a gas introduction port 63 and an exhaust port 65. The bush 11 is arranged. An auxiliary electrode 71 connected to the ground potential is provided on the inner surface of the opening of the guide bush 11 so as to be inserted. At this time, the auxiliary electrode 7
The guide bush 11 is arranged so that 1 is located at the center of the opening.

The degree of vacuum in the vacuum chamber 61 is 3 × 10 ^−5.
Vacuum is exhausted from the exhaust port 65 by an exhaust means (not shown) so that the pressure becomes torr. Thereafter, benzene (C6 H6) as a gas containing carbon is introduced into the vacuum chamber 61 from the gas inlet port 63, and the pressure in the vacuum chamber 61 is increased to 5.times.10.sup.- ³ t.
orr is controlled.

The anode 79 has an anode power supply 75.
, And an AC voltage is applied to the filament 81 from the filament power supply 77. At this time, a plus DC voltage of 10 V is applied from the anode power supply 75 to the anode 79. Furthermore, the voltage applied from the filament power supply 77 to the filament 81 is 3
An AC voltage of 10 V is applied so that a current of 0 A flows. Then, a DC voltage is applied to the guide bush 11 from a DC power supply 73. At this time, −3 kV is applied to the guide bush 11 from the DC power supply 73.

Then, a plasma is generated in a region around the guide bush 11 arranged in the vacuum chamber 61, and a hard carbon film is formed on the guide bush 11. The thickness of the hard carbon film formed on the inner peripheral surface of the guide bush 11 may be 1 μm to 5 μm.

In the method for forming a hard carbon film shown in FIG. 2, the auxiliary electrode 71 is disposed so as to be inserted into the inner surface of the opening of the guide bush 11 and connected to the ground voltage.
Plasma can be formed not only on the outer peripheral portion of the guide bush 11 but also on the inner surface of the guide bush 11 opening.

As described above, in the method for forming a hard carbon film of the present invention, the film forming process is performed by arranging the auxiliary electrode 71 to be inserted into the inner surface of the opening of the guide bush 11.
For this reason, the auxiliary electrode 71 connected to the ground potential is provided on the inner surface of the opening where the same potentials are opposed to each other, so that the hollow discharge which is an abnormal discharge does not occur, and the adhesion of the hard carbon film is improved.

Further, the potential characteristics are uniform on the inner surface of the opening in the longitudinal direction of the guide bush 11, the thickness distribution of the hard carbon film formed on the inner peripheral surface does not occur, and the guide between the opening end face and the back side of the opening is formed. The bush 11 can be formed with a uniform film thickness over the entire opening.

In addition, as described above, the intermediate layer formed below the hard carbon film can also be formed with a uniform film thickness on the open end face of the guide bush 11 and on the back side. Therefore, peeling of the hard carbon film due to stress does not occur.

For these reasons, in the method for forming the intermediate layer and the hard carbon film of the present invention, the adhesion of the hard carbon film to the guide bush 11 is improved.

The auxiliary electrode 71 is connected to the guide bush 11
It is sufficient that the size is smaller than the opening size, and a plasma forming region which is preferably a gap of about 4 mm is provided.
The diameter of the auxiliary electrode 71 and the inner peripheral surface 1 of the guide bush 11
It is desirable that the dimensional ratio of the diameter of 1b be 1/10 or less, and when the auxiliary electrode 71 is made thinner, it can be made linear. The auxiliary electrode 71 for forming the hard carbon film is formed continuously with the intermediate layer using an intermediate layer material, or a metal material such as stainless steel, tungsten (W) or tantalum (Ta). What is necessary is just to form with a high melting point metal material like this.

The sectional shape of the auxiliary electrode 71 is circular. Then, when the auxiliary electrode 71 is inserted into the opening of the guide bush 11, the length is set so as to be aligned with the end face of the opening of the guide bush 11, or is set so as to protrude from the end face of the guide bush 11. Alternatively, the length of the guide bush 11 is set to be 1 mm to 2 mm behind the end face without protruding from the end face.

[Description of Second Example of Method of Forming Hard Carbon Film: FIG. 3] Next, a method of forming a hard carbon film according to an embodiment of the present invention which is different from the above description will be described with reference to FIG. FIG. 3 is a cross-sectional view showing a method for forming a hard carbon film formed on the upper surface of the intermediate layer in the method for forming a film according to the embodiment of the present invention.

As shown in FIG. 3, an intermediate layer is formed on the inner peripheral surface in a vacuum chamber 61 having a gas inlet 63 and an exhaust port 65, and a hard carbon film is formed on the upper surface of the intermediate layer. The guide bush 11 is arranged. In the opening of the guide bush 11, an auxiliary electrode 71 connected to the ground potential is provided so as to be inserted. At this time, the auxiliary electrode 7
1 is arranged so as to be substantially at the center of the opening of the guide bush 11.

Then, the inside of the vacuum chamber 61 is evacuated from the exhaust port 65 to a vacuum degree of 3 × 10 ⁻⁵ torr by exhaust means (not shown).
Evacuate to r. Then, the gas inlet 63
Methane (CH4) as a gas containing carbon from the vacuum chamber 6
1 and adjusted so that the degree of vacuum becomes 0.1 torr.

Then, 400 W of high frequency power is applied to the guide bush 11 from the high frequency power source 69 having an oscillation frequency of 13.56 MHz via the matching circuit 67.

Further, on the inner surface of the opening of the guide bush 11,
In addition, an auxiliary electrode 7 for connecting a ground voltage is provided at the center of the opening.
1 to insert, generate plasma,
A hard carbon film is formed. The thickness of the hard carbon film formed on the inner peripheral surface of the guide bush 11 is 1 μm to 5 μm.
It may be formed with a thickness of μm.

In the method of forming a hard carbon film shown in FIG. 3, the auxiliary electrode 71 is disposed so as to be inserted into the inner surface of the opening of the guide bush 11 and connected to the ground voltage.
Plasma can be formed not only on the outer peripheral portion of the guide bush 11 but also on the inner surface of the guide bush 11 opening.

As described above, in the method for forming a hard carbon film according to the present invention, the film forming process is performed by disposing the auxiliary electrode 71 to be inserted into the inner surface of the opening of the guide bush 11. For this reason, an auxiliary electrode connected to the ground potential is provided on the inner surface of the opening where the same potentials are opposed to each other, so that the hollow discharge which is an abnormal discharge does not occur, and the adhesion of the hard carbon film is improved.

Furthermore, the potential characteristics are uniform on the inner surface of the opening in the longitudinal direction of the guide bush 11, the thickness distribution of the hard carbon film formed on the inner peripheral surface does not occur, and the guide between the opening end surface and the back side of the opening is formed. A uniform film thickness can be formed over the entire opening of the bush 11.

Further, as described above, the intermediate layer formed below the hard carbon film can also be formed to have a uniform film thickness on the open end face of the guide bush 11 and on the back side thereof. Therefore, peeling of the hard carbon film due to stress does not occur.

For the reasons described above, in the method for forming the intermediate layer and the hard carbon film of the present invention, the adhesion of the hard carbon film to the guide bush 11 is improved.

The auxiliary electrode 71 is connected to the guide bush 11
It is sufficient that the size is smaller than the opening size, and a plasma forming region which is preferably a gap of about 4 mm is provided.
The diameter of the auxiliary electrode 71 and the inner peripheral surface 1 of the guide bush 11
It is desirable that the dimensional ratio of the diameter of 1b be 1/10 or less, and when the auxiliary electrode 71 is made thinner, it can be made linear. The auxiliary electrode 71 for forming the hard carbon film is formed continuously with the intermediate layer using an intermediate layer material, or a metal material such as stainless steel, tungsten (W) or tantalum (Ta). What is necessary is just to form with a high melting point metal material like this.

The auxiliary electrode 71 has a circular cross section. Then, when the auxiliary electrode 71 is inserted into the opening of the guide bush 11, the length is set so as to be aligned with the end face of the opening of the guide bush 11, or is set so as to protrude from the end face of the guide bush 11. Alternatively, the length of the guide bush 11 is set to be 1 mm to 2 mm behind the end face without protruding from the end face.

[Description of Third Example of Method of Forming Hard Carbon Film: FIG. 4] Next, a method of forming a hard carbon film according to an embodiment of the present invention which is different from the above description will be described with reference to FIG. FIG. 4 is a cross-sectional view showing a method for forming a hard carbon film formed on the upper surface of the intermediate layer in the method for forming a film according to the embodiment of the present invention.

As shown in FIG. 4, an intermediate layer is formed on the inner peripheral surface in a vacuum chamber 61 having a gas inlet 63 and an exhaust port 65, and a hard carbon film is formed on the upper surface of the intermediate layer. Guide bush 11 is arranged. An auxiliary electrode 71 connected to the ground potential is provided on the inner surface of the opening of the guide bush 11 so as to be inserted. At this time, the auxiliary electrode 7
The guide bush 11 is arranged so that 1 is located at the center of the opening.

Then, the degree of vacuum in the vacuum chamber 61 is set to 3 × 10 ^−5.
Vacuum is exhausted from the exhaust port 65 by an exhaust means (not shown) so that the pressure becomes torr.

Thereafter, methane (CH4) as a gas containing carbon was introduced into the vacuum chamber 61 from the gas inlet 63,
The degree of vacuum in the vacuum chamber 61 is controlled to be 0.1 torr.

The guide bush 11 has a DC power source 7
From step 3, a DC voltage is applied. At this time, guide bush 1
1 is supplied with -600 V from the DC power supply 73,
A hard carbon film is formed. The thickness of the hard carbon film formed on the inner peripheral surface of the guide bush 11 is 1 μm to 5 μm.
It may be formed with a thickness of μm.

In the method of forming a hard carbon film shown in FIG. 4, the auxiliary bush 71 is disposed so as to be inserted into the inner surface of the opening of the guide bush 11 and connected to the ground voltage.
Plasma can be formed not only on the outer peripheral portion of the guide bush 11 but also on the inner surface of the guide bush 11 opening.

As described above, in the method of forming a hard carbon film according to the present invention, the film forming process is performed by arranging the auxiliary electrode 71 to be inserted into the inner surface of the opening of the guide bush 11. For this reason, an auxiliary electrode connected to the ground potential is provided on the inner surface of the opening where the same potentials are opposed to each other, so that the hollow discharge which is an abnormal discharge does not occur, and the adhesion of the hard carbon film is improved.

Further, the potential characteristics become uniform on the inner surface of the opening in the longitudinal direction of the guide bush 11, and there is no thickness distribution of the hard carbon film formed on the inner surface of the opening. The thickness can be formed.

Further, the intermediate layer formed below the hard carbon film can also have a uniform film thickness on the open end face of the guide bush 11 and on the back side thereof as described above. Therefore, peeling of the hard carbon film due to stress does not occur.

For the reasons described above, in the method of forming the intermediate layer and the hard carbon film in the embodiment of the present invention, the adhesion of the hard carbon film to the guide bush 11 is improved.

The auxiliary electrode 71 is connected to the guide bush 11
It is sufficient that the size is smaller than the opening size, and a plasma forming region which is preferably a gap of about 4 mm is provided.
The diameter of the auxiliary electrode 71 and the inner peripheral surface 1 of the guide bush 11
It is desirable that the dimensional ratio of the diameter of 1b be 1/10 or less, and when the auxiliary electrode 71 is made thinner, it can be made linear. The auxiliary electrode 71 for forming the hard carbon film is formed continuously with the intermediate layer using an intermediate layer material, or a metal material such as stainless steel, tungsten (W) or tantalum (Ta). What is necessary is just to form with a high melting point metal material like this.

The auxiliary electrode 71 has a circular cross section. Then, when the auxiliary electrode 71 is inserted into the opening of the guide bush 11, the length is set so as to be aligned with the end face of the opening of the guide bush 11, or is set so as to protrude from the end face of the guide bush 11. Alternatively, the length of the guide bush 11 is set to be 1 mm to 2 mm behind the end face without protruding from the end face.

[Description of Third Example of Method for Forming Intermediate Layer: FIG. 7]
Next, a method of forming an intermediate layer on the inner peripheral surface of the guide bush in an embodiment different from the above description will be described with reference to FIG. FIG. 7 is a sectional view showing a method for forming an intermediate layer in the method for forming a film according to the present invention.

As shown in FIG. 7, a guide bush 11 having an opening is arranged in a vacuum chamber 61 having a gas inlet 63 and an exhaust port 65. This guide bush 11 is connected to the ground potential.

Then, an auxiliary electrode 71 made of a titanium-silicon alloy material and formed as an intermediate layer is arranged to be inserted into the opening of the guide bush 11. An auxiliary electrode power supply 83c for applying high frequency power is connected to the auxiliary electrode 71 via a matching circuit 67. Further, the auxiliary electrode 71 made of this titanium-silicon alloy material
Is 30% by weight to 70% by weight.

Then, the inside of the vacuum chamber 61 is evacuated to a degree of vacuum of 3 × 10 ⁻⁵ torr by exhaust means (not shown). Thereafter, an argon gas is introduced into the vacuum chamber 61 as a sputtering gas from the gas inlet 63, and the degree of vacuum is controlled to 5 × 10 ⁻³ torr.

Further, high frequency power of 400 W is applied to the auxiliary electrode 71 from the auxiliary electrode power supply 83c. Then, plasma is generated in the opening of the guide bush 11 and in the region around the auxiliary electrode 71, and titanium in the plasma is generated by ions in the plasma.
The surface of the auxiliary electrode 71 made of a silicon alloy material is sputtered.

[0211] The intermediate layer material that has been knocked out from the surface of the auxiliary electrode 71 adheres to the inner peripheral surface of the guide bush 11, and forms an intermediate layer made of a titanium-silicon alloy material on the inner peripheral surface of the guide bush 11. be able to. The sputtering process is performed for 30 minutes to form an intermediate layer made of a 0.5 μm thick titanium-silicon alloy film on the inner peripheral surface of the guide bush 11.

Here, the size of the inner diameter of the opening of the guide bush 11 is 10 mm, and the diameter of the auxiliary electrode 71 made of a titanium-silicon alloy is 2 mm. The sectional shape of the auxiliary electrode 71 is not limited to a circle, but may be a polygon.

As described above, in the method of forming the intermediate layer according to the embodiment of the present invention, the auxiliary electrode 71 made of the intermediate layer material is arranged in the opening of the guide bush 11, and the auxiliary electrode 71 and the inner surface of the opening of the guide bush 11 are formed. And an intermediate layer is formed on the inner peripheral surface of the guide bush.

The plasma formed by arranging the auxiliary electrode 71 made of an intermediate layer material in the opening of the guide bush 11
Since the guide bush 11 is uniform in the longitudinal direction, the intermediate layer can be formed on the inner peripheral surface of the guide bush 11 with a uniform thickness.

The distribution of the thickness of the intermediate layer formed by the method of forming an intermediate layer according to the present invention shown in FIG. 7 will be described with reference to the graph of FIG. In the graph of FIG. 5, the horizontal axis represents the distance from the opening end of the guide bush, and the vertical axis represents the thickness of the intermediate layer formed on the inner peripheral surface of the guide bush. And curve 85
Shows a film thickness distribution when formed by the method for forming an intermediate layer of the present invention shown in FIG.

As shown by a curve 85 in the graph of FIG. 5, when an intermediate layer having a thickness of 0.5 μm was formed at the opening end of the guide bush, the intermediate layer formed by the method shown in FIG.
There is almost no change in the film thickness even at a position 30 mm from the end of the opening to the back of the opening, and an intermediate layer made of a titanium-silicon alloy film can be formed with a uniform thickness over the entire opening of the guide bush 11.

Thereafter, a hard carbon film is formed on the guide bush 11 on which the intermediate layer has been formed. There are three methods for forming the hard carbon film, which will be described with reference to FIGS. 2, 3, and 4, respectively. First, a method for forming a hard carbon film will be described with reference to FIG. FIG. 2 is a cross-sectional view showing a method for forming a hard carbon film formed on the upper surface of the intermediate layer in the method for forming a film according to the embodiment of the present invention.

[First Example of Method for Forming Hard Carbon Film: FIG. 2] As shown in FIG. 2, a guide for forming a hard carbon film in a vacuum chamber 61 having a gas inlet 63 and an exhaust port 65. The bush 11 is arranged. An auxiliary electrode 71 connected to the ground potential is provided on the inner surface of the opening of the guide bush 11 so as to be inserted. At this time, the auxiliary electrode 7
The guide bush 11 is arranged so that 1 is located at the center of the opening.

Then, the degree of vacuum in the vacuum chamber 61 is set to 3 × 10 ^−5.
Vacuum is exhausted from the exhaust port 65 by an exhaust means (not shown) so that the pressure becomes torr. Thereafter, benzene (C6 H6) as a gas containing carbon is introduced into the vacuum chamber 61 from the gas inlet port 63, and the pressure in the vacuum chamber 61 is increased to 5.times.10.sup.- ³ t.
orr is controlled.

The anode 79 has an anode power supply 75.
, And an AC voltage is applied to the filament 81 from the filament power supply 77. At this time, a plus DC voltage of 10 V is applied from the anode power supply 75 to the anode 79. Furthermore, the voltage applied from the filament power supply 77 to the filament 81 is 3
An AC voltage of 10 V is applied so that a current of 0 A flows. Then, a DC voltage is applied to the guide bush 11 from a DC power supply 73. At this time, −3 kV is applied to the guide bush 11 from the DC power supply 73.

[0221] Plasma is generated in a region around the guide bush 11 disposed in the vacuum chamber 61, and a hard carbon film is formed on the guide bush 11. The thickness of the hard carbon film formed on the inner peripheral surface of the guide bush 11 may be 1 μm to 5 μm.

In the method of forming a hard carbon film shown in FIG. 2, the auxiliary bushing 71 is disposed so as to be inserted into the inner surface of the opening of the guide bush 11 and connected to the ground voltage.
Plasma can be formed not only on the outer peripheral portion of the guide bush 11 but also on the inner surface of the guide bush 11 opening.

As described above, in the method for forming a hard carbon film according to the present invention, the auxiliary electrode 71 to be inserted into the inner surface of the opening of the guide bush 11 is disposed to perform the film forming process. For this reason, the auxiliary electrode 71 connected to the ground potential is provided on the inner surface of the opening where the same potentials are opposed to each other, so that the hollow discharge which is an abnormal discharge does not occur, and the adhesion of the hard carbon film is improved.

Furthermore, the potential characteristics are uniform on the inner surface of the opening of the guide bush 11 in the longitudinal direction, the thickness distribution of the hard carbon film formed on the inner peripheral surface is not generated, and the guide between the opening end surface and the back side of the opening is formed. The bush 11 can be formed with a uniform film thickness over the entire opening.

In addition, as described above, the intermediate layer formed below the hard carbon film can also be formed with a uniform film thickness on the open end face of the guide bush 11 and on the back side thereof. Therefore, peeling of the hard carbon film due to stress does not occur.

For these reasons, in the method of forming the intermediate layer and the hard carbon film of the present invention, the adhesion of the hard carbon film to the guide bush 11 is improved.

The auxiliary electrode 71 is connected to the guide bush 11
It is sufficient that the size is smaller than the opening size, and a plasma forming region which is preferably a gap of about 4 mm is provided.
The diameter of the auxiliary electrode 71 and the inner peripheral surface 1 of the guide bush 11
It is desirable that the dimensional ratio of the diameter of 1b be 1/10 or less, and when the auxiliary electrode 71 is made thinner, it can be made linear. The auxiliary electrode 71 for forming the hard carbon film is formed continuously with the intermediate layer using an intermediate layer material, or a metal material such as stainless steel, tungsten (W) or tantalum (Ta). What is necessary is just to form with a high melting point metal material like this.

The sectional shape of the auxiliary electrode 71 is circular. Then, when the auxiliary electrode 71 is inserted into the opening of the guide bush 11, the length is set so as to be aligned with the end face of the opening of the guide bush 11, or is set so as to protrude from the end face of the guide bush 11. Alternatively, the length of the guide bush 11 is set to be 1 mm to 2 mm behind the end face without protruding from the end face.

[Description of Second Example of Method of Forming Hard Carbon Film: FIG. 3] Next, a method of forming a hard carbon film according to an embodiment of the present invention which is different from the above description will be described with reference to FIG. FIG. 3 is a cross-sectional view showing a method for forming a hard carbon film formed on the upper surface of the intermediate layer in the method for forming a film according to the embodiment of the present invention.

As shown in FIG. 3, in a vacuum chamber 61 having a gas inlet 63 and an exhaust port 65, an intermediate layer is formed on the inner peripheral surface, and a hard carbon film is formed on the upper surface of the intermediate layer. The guide bush 11 is arranged. In the opening of the guide bush 11, an auxiliary electrode 71 connected to the ground potential is provided so as to be inserted. At this time, the auxiliary electrode 7
1 is arranged so as to be substantially at the center of the opening of the guide bush 11.

Then, the inside of the vacuum chamber 61 is exhausted from the exhaust port 65 to a degree of vacuum of 3 × 10 ⁻⁵ torr by an exhaust means (not shown).
Evacuate to r. Then, the gas inlet 63
Methane (CH4) as a gas containing carbon from the vacuum chamber 6
1 and adjusted so that the degree of vacuum becomes 0.1 torr.

Then, 400 W of high frequency power is applied to the guide bush 11 from a high frequency power source 69 having an oscillation frequency of 13.56 MHz via a matching circuit 67.

Further, on the inner surface of the opening of the guide bush 11,
In addition, an auxiliary electrode 7 for connecting a ground voltage is provided at the center of the opening.
1 to insert, generate plasma,
A hard carbon film is formed. The thickness of the hard carbon film formed on the inner peripheral surface of the guide bush 11 is 1 μm to 5 μm.
It may be formed with a thickness of μm.

In the method of forming a hard carbon film shown in FIG. 3, the auxiliary electrode 71 is disposed so as to be inserted into the inner surface of the opening of the guide bush 11 and connected to the ground voltage.
Plasma can be formed not only on the outer peripheral portion of the guide bush 11 but also on the inner surface of the guide bush 11 opening.

As described above, in the method of forming a hard carbon film according to the present invention, the film forming process is performed by disposing the auxiliary electrode 71 to be inserted into the inner surface of the opening of the guide bush 11. For this reason, an auxiliary electrode connected to the ground potential is provided on the inner surface of the opening where the same potentials are opposed to each other, so that the hollow discharge which is an abnormal discharge does not occur, and the adhesion of the hard carbon film is improved.

Further, the potential characteristics are uniform on the inner surface of the opening of the guide bush 11 in the longitudinal direction, the thickness distribution of the hard carbon film formed on the inner peripheral surface does not occur, and the guide between the opening end surface and the back side of the opening is formed. A uniform film thickness can be formed over the entire opening of the bush 11.

In addition, as described above, the intermediate layer formed below the hard carbon film can also have a uniform film thickness on the open end face of the guide bush 11 and on the back side. Therefore, peeling of the hard carbon film due to stress does not occur.

For the reasons described above, in the method for forming the intermediate layer and the hard carbon film of the present invention, the adhesion of the hard carbon film to the guide bush 11 is improved.

The auxiliary electrode 71 is connected to the guide bush 11
It is sufficient that the size is smaller than the opening size, and a plasma forming region which is preferably a gap of about 4 mm is provided.
The diameter of the auxiliary electrode 71 and the inner peripheral surface 1 of the guide bush 11
It is desirable that the dimensional ratio of the diameter of 1b be 1/10 or less, and when the auxiliary electrode 71 is made thinner, it can be made linear. The auxiliary electrode 71 for forming the hard carbon film is formed continuously with the intermediate layer using an intermediate layer material, or a metal material such as stainless steel, tungsten (W) or tantalum (Ta). What is necessary is just to form with a high melting point metal material like this.

The auxiliary electrode 71 has a circular cross section. Then, when the auxiliary electrode 71 is inserted into the opening of the guide bush 11, the length is set so as to be aligned with the end face of the opening of the guide bush 11, or is set so as to protrude from the end face of the guide bush 11. Alternatively, the length of the guide bush 11 is set to be 1 mm to 2 mm behind the end face without protruding from the end face.

[Explanation of Third Example of Method of Forming Hard Carbon Film: FIG. 4] Next, a method of forming a hard carbon film according to an embodiment of the present invention, which is different from the above description, will be described with reference to FIG. FIG. 4 is a cross-sectional view showing a method for forming a hard carbon film formed on the upper surface of the intermediate layer in the method for forming a film according to the embodiment of the present invention.

As shown in FIG. 4, in a vacuum chamber 61 having a gas inlet 63 and an exhaust port 65, an intermediate layer is formed on the inner peripheral surface, and a hard carbon film is formed on the upper surface of the intermediate layer. Guide bush 11 is arranged. An auxiliary electrode 71 connected to the ground potential is provided on the inner surface of the opening of the guide bush 11 so as to be inserted. At this time, the auxiliary electrode 7
1 is arranged so as to be at the center of the opening of the guide bush 11.

Then, the degree of vacuum in the vacuum chamber 61 is 3 × 10 ^−5.
Vacuum is exhausted from the exhaust port 65 by an exhaust means (not shown) so that the pressure becomes torr.

Thereafter, methane (CH4) as a gas containing carbon was introduced into the vacuum chamber 61 from the gas inlet 63,
The degree of vacuum in the vacuum chamber 61 is controlled to be 0.1 torr.

The guide bush 11 has a DC power source 7
From step 3, a DC voltage is applied. At this time, guide bush 1
1 is supplied with -600 V from the DC power supply 73,
A hard carbon film is formed. The thickness of the hard carbon film formed on the inner peripheral surface of the guide bush 11 is 1 μm to 5 μm.
It may be formed with a thickness of μm.

In the method for forming a hard carbon film shown in FIG. 4, the auxiliary bush 71 is disposed so as to be inserted into the inner surface of the opening of the guide bush 11 and connected to the ground voltage.
Plasma can be formed not only on the outer peripheral portion of the guide bush 11 but also on the inner surface of the guide bush 11 opening.

As described above, in the method for forming a hard carbon film according to the present invention, the film forming process is performed by arranging the auxiliary electrode 71 to be inserted into the inner surface of the opening of the guide bush 11. For this reason, an auxiliary electrode connected to the ground potential is provided on the inner surface of the opening where the same potentials are opposed to each other, so that the hollow discharge which is an abnormal discharge does not occur, and the adhesion of the hard carbon film is improved.

Further, the potential characteristics become uniform on the inner surface of the opening in the longitudinal direction of the guide bush 11, and there is no thickness distribution of the hard carbon film formed on the inner surface of the opening. The thickness can be formed.

In addition, the intermediate layer formed below the hard carbon film can also have a uniform film thickness on the open end face of the guide bush 11 and on the back side thereof as described above. Therefore, peeling of the hard carbon film due to stress does not occur.

For the reasons described above, in the method for forming the intermediate layer and the hard carbon film in the embodiment of the present invention, the adhesion of the hard carbon film to the guide bush 11 is improved.

The auxiliary electrode 71 is connected to the guide bush 11
It is sufficient that the size is smaller than the opening size, and a plasma forming region which is preferably a gap of about 4 mm is provided.
The diameter of the auxiliary electrode 71 and the inner peripheral surface 1 of the guide bush 11
It is desirable that the dimensional ratio of the diameter of 1b be 1/10 or less, and when the auxiliary electrode 71 is made thinner, it can be made linear. The auxiliary electrode 71 for forming the hard carbon film is formed continuously with the intermediate layer using an intermediate layer material, or a metal material such as stainless steel, tungsten (W) or tantalum (Ta). What is necessary is just to form with a high melting point metal material like this.

Further, the sectional shape of the auxiliary electrode 71 is circular. Then, when the auxiliary electrode 71 is inserted into the opening of the guide bush 11, the length is set so as to be aligned with the end face of the opening of the guide bush 11, or is set so as to protrude from the end face of the guide bush 11. Alternatively, the length of the guide bush 11 is set to be 1 mm to 2 mm behind the end face without protruding from the end face.

As described above, in the method of forming the intermediate layer according to the embodiment of the present invention described with reference to FIGS. 1, 6, and 7, the description has been made of the example in which the guide bush 11 is connected to the ground potential.
A DC negative voltage may be applied to the guide bush 11 using a DC power supply. Also in this case, as in the above description, the thickness of the intermediate layer can be formed to be uniform at the opening end and the back side of the opening.

As described above, in the method of forming an intermediate layer according to the embodiment of the present invention described with reference to FIGS. 1, 6, and 7, an example in which a titanium-silicon alloy film is used as the intermediate layer has been described. , Carbon-silicon alloy, chromium-silicon alloy, titanium-germanium alloy, chromium-
A germanium alloy or an aluminum-silicon alloy can also be applied as the intermediate layer material.

Further, in the method of forming an intermediate layer according to the embodiment of the present invention described with reference to FIGS. 1, 6, and 7, an example in which the intermediate layer is formed of an alloy film has been described. Or a two-layered film.

At this time, a first auxiliary electrode made of titanium is arranged in the opening of the guide bush 11 to form a first intermediate layer made of titanium, and then a second auxiliary electrode made of silicon is guided by the guide. A second intermediate layer made of silicon is formed in the opening of the bush 11.

As the first intermediate layer, chromium or aluminum can be applied other than titanium, and further, as the second intermediate layer, germanium can be applied instead of silicon. Furthermore, as the first intermediate layer, a titanium alloy, a chromium alloy, or an aluminum alloy can be applied, and as the second intermediate layer, a compound of silicon or a compound of germanium can be applied.

In this case, the method for forming the intermediate layer in the embodiment described with reference to FIGS. 1, 6, and 7 may be applied to the first intermediate layer and the second intermediate layer. That is, the first intermediate layer and the second intermediate layer are formed by combining the same film forming method or the different film forming methods of the forming methods described with reference to FIGS. A combination of applying a ground potential or a DC negative voltage to the guide bush 11 can also be applied.

When an intermediate layer having a two-layer film structure is employed, titanium, chromium, and aluminum under the intermediate layer have a role of maintaining adhesion to the guide bush 11, and silicon, germanium, which is an upper layer of the intermediate layer, do not. It has a role of covalently bonding to the hard carbon film and strongly bonding to the hard carbon film.

In the above description of the method for forming a hard carbon film of the present invention described with reference to FIGS. 2 to 4, the hard carbon film is formed on the outer peripheral portion of the guide bush 11 and the inner surface of the opening. Therefore, the hard carbon film is formed on the outer peripheral portion of the guide bush 11 and the inner surface of the opening. However, if the means described below is used, a hard carbon film can be formed only on the inner surface of the opening of the guide bush 11.

In this case, a method of arranging a covering member on the outer peripheral portion of the guide bush 11 or a method of simply forming an aluminum foil around the outer peripheral portion of the guide bush 11 is adopted.

In the method of forming the intermediate layer and the hard carbon film of the present invention described with reference to FIGS. 1 to 4, 6 and 7, the intermediate layer and the hard carbon film are formed by different apparatuses. Any one of the method and the method of forming the film continuously using the same apparatus may be adopted.

In the description of the above embodiment of the method for forming a hard carbon film of the present invention described with reference to FIGS. 2, 3, and 4, the auxiliary electrode disposed in the opening of the guide bush 11 is grounded. The description has been made in the form of connection to a potential.
However, a method of applying a DC positive voltage from a DC power supply to the auxiliary electrode 71 to form a hard carbon film may be adopted.

When a DC positive voltage is applied to the auxiliary electrode 71 disposed on the inner surface of the opening of the guide bush 11 to form a hard carbon film, the following effects are obtained.

That is, when a DC positive voltage is applied to the auxiliary electrode 71, an effect of collecting electrons in the area surrounding the auxiliary electrode 71 is produced, and the area surrounding the auxiliary electrode 71 has a high electron density. When the electron density is increased in this way, the collision probability between the molecule including carbon and the electrons is inevitably increased, ionization of gas molecules is promoted, and the plasma density in the region around the auxiliary electrode 71 is increased.

For this reason, in the embodiment in which a DC positive voltage is applied to the auxiliary electrode 71 to form a hard carbon film,
The film forming speed of the hard carbon film is higher than when no DC positive voltage is applied to the auxiliary electrode 71 in this manner.

Further, when the size of the opening of the guide bush 11 is reduced and the gap between the inner surface of the opening and the auxiliary electrode 71 is reduced, if a hard carbon film is formed without applying a DC positive voltage to the auxiliary electrode 71, Bush 11
No plasma is generated on the inner surface of the opening, and a film cannot be formed.

On the other hand, in the embodiment in which a DC positive voltage is applied to the auxiliary electrode 71 to form a hard carbon film, a DC positive voltage is applied from a DC power source to the auxiliary electrode 71 disposed on the inner surface of the opening to obtain an electron. Can be forcibly collected in the area around the auxiliary electrode 71. Therefore, the auxiliary electrode 71
Can be generated around the surroundings.

Therefore, in the embodiment in which the hard carbon film is formed without applying a DC positive voltage to the auxiliary electrode 71, the guide bush 11 having a small opening cannot be formed.
In addition, if the embodiment in which a film is formed using the auxiliary electrode 71 to which a DC positive voltage is applied is applied, a hard carbon film can be formed.

Preferably, a method in which an intermediate layer and a hard carbon film are successively formed using the same apparatus is more preferable. The reason for this is that the mutual adhesion between the intermediate layer and the hard carbon film is improved.

When the intermediate layer and the hard carbon film are successively formed by using the same apparatus, the auxiliary electrode 71 is set to the ground potential and the guide bush 11 is formed after the intermediate layer is formed.
, A DC negative voltage or a high-frequency power may be applied, and the gas introduced from the gas inlet 63 may be changed to a gas containing carbon.

In the above description of the method for forming a hard carbon film of the present invention described with reference to FIGS. 2 to 4, the embodiment using methane gas or benzene gas as the gas containing carbon has been described. Alternatively, a gas containing carbon such as ethylene or a vapor containing a liquid containing carbon such as hexane can be used.

[0273]

As is apparent from the above description, in the method for forming a hard carbon film in the method for forming a film of the present invention,
An auxiliary electrode connected to the ground potential is arranged at the center of the opening on the inner surface of the guide bush to form a hard carbon film. Then, a negative DC voltage or a high-frequency power is applied to the guide bush forming the hard carbon film.

As a result, an auxiliary electrode connected to the ground potential is provided on the inner surface of the opening where electrodes of the same potential face each other, so that the same potentials do not face each other.

Such a potential state is the most desirable state for plasma enhanced chemical vapor deposition, and a hollow discharge, which is an abnormal discharge, does not occur. Therefore, a hard carbon film having good adhesion can be formed on the guide bush.

Further, in the method for forming a hard carbon film in the method for forming a film according to the present invention, the auxiliary electrode connected to the ground potential is arranged on the inner surface of the opening of the guide bush.
The potential characteristics become uniform on the inner surface of the opening in the longitudinal direction of the guide bush.

As a result, there is no occurrence of a film thickness distribution of the hard carbon film formed on the inner peripheral surface, and a uniform film thickness can be formed over the entire area between the open end face and the open back side of the guide bush. Have.

Further, in the method for forming a coating on the inner peripheral surface of the guide bush of the present invention, a hard DC film is formed by applying a DC positive voltage to the auxiliary electrode disposed on the inner surface of the opening of the guide bush.

When the DC positive voltage is applied to the auxiliary electrode in this manner, an effect of collecting electrons in a region around the auxiliary electrode is produced, and the region around the auxiliary electrode has a high electron density. When the electron density increases in this way, the collision probability between the gas molecules containing carbon and the electrons necessarily increases, ionization of the gas molecules is promoted, and the plasma density around the auxiliary electrode increases.

For this reason, in the embodiment in which a DC positive voltage is applied to the auxiliary electrode to form a hard carbon film, the film formation speed of the hard carbon film is determined when the DC positive voltage is not applied to the auxiliary electrode. It is higher than that.

Further, when the size of the opening of the guide bush is reduced and the gap between the inner surface of the opening and the auxiliary electrode is reduced, if a hard carbon film is formed without applying a DC positive voltage to the auxiliary electrode, the opening of the guide bush is reduced. No plasma is generated on the inner surface, and a film cannot be formed.

On the other hand, in the method of forming a hard carbon film by applying a DC positive voltage to the auxiliary electrode, electrons are forcibly applied by applying a DC positive voltage from a DC power source to the auxiliary electrode disposed on the inner surface of the opening. Can be collected in the area around the auxiliary electrode. Therefore, plasma can be generated around the auxiliary electrode.

Therefore, even in a guide bush having a small opening size where a film cannot be formed by a method of forming a hard carbon film without applying a DC positive voltage to the auxiliary electrode, a film is formed using the auxiliary electrode to which a DC positive voltage is applied. By applying the method, a hard carbon film can be formed.

Further, in the method of forming an intermediate layer in the method of forming a coating film according to the present invention, an auxiliary electrode made of an intermediate layer material is disposed in the opening of the guide bush, and plasma is generated between the auxiliary electrode and the inner surface of the opening. Alternatively, the intermediate layer is formed on the inner peripheral surface of the guide bush by a resistance heating evaporation method.

Thus, the intermediate layer can be formed with a uniform film thickness distribution over the entire inner surface of the opening of the guide bush. Therefore, the peeling phenomenon of the hard carbon film due to the thinning of the intermediate layer does not occur. Thus, in the film forming method of the present invention, the adhesion of the hard carbon film to the guide bush is improved.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a method of forming an intermediate layer among methods of forming a film on an inner peripheral surface of a guide bush according to an embodiment of the present invention.

FIG. 2 is a cross-sectional view illustrating a method of forming a hard carbon film among methods of forming a film on an inner peripheral surface of a guide bush according to an embodiment of the present invention.

FIG. 3 is a cross-sectional view illustrating a method of forming a hard carbon film among methods of forming a film on an inner peripheral surface of a guide bush according to the embodiment of the present invention.

FIG. 4 is a cross-sectional view illustrating a method of forming a hard carbon film among methods of forming a film on an inner peripheral surface of a guide bush according to the embodiment of the present invention.

FIG. 5 is a graph showing the relationship between the thickness of a film formed according to an embodiment of the present invention and a conventional technique and the distance from an opening end.

FIG. 6 is a cross-sectional view illustrating a method of forming an intermediate layer among methods of forming a film on an inner peripheral surface of a guide bush according to the embodiment of the present invention.

FIG. 7 is a cross-sectional view illustrating a method of forming an intermediate layer among methods of forming a film on an inner peripheral surface of a guide bush according to the embodiment of the present invention.

FIG. 8 is a cross-sectional view showing the vicinity of a main shaft of a lathe using a guide bush for forming an intermediate layer and a hard carbon film by a method for forming a hard carbon film on an inner peripheral surface of a guide bush according to an embodiment of the present invention.

FIG. 9 is a cross-sectional view showing the vicinity of a main axis of a lathe using a guide bush that forms an intermediate layer and a hard carbon film by a method of forming a hard carbon film on an inner peripheral surface of a guide bush according to an embodiment of the present invention.

FIG. 10 is a cross-sectional view showing a guide bush for forming an intermediate layer and a hard carbon film by a method for forming a coating on the inner peripheral surface of the guide bush according to the embodiment of the present invention.

FIG. 11 is a cross-sectional view illustrating a method of forming an intermediate layer in a method of forming a coating film on an inner peripheral surface of a guide bush in the related art.

FIG. 12 is a cross-sectional view showing a method of forming a hard carbon film in a method of forming a film on an inner peripheral surface of a guide bush according to a conventional technique.

[Explanation of symbols]

 11 Guide bush 11b Inner peripheral surface 61 Vacuum tank 63 Gas inlet 65 Exhaust port 69 High frequency power supply 71 Auxiliary electrode 73 DC power supply

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Takashi Toida 840 Takeno, Shimotomi, Tokorozawa-shi, Saitama Citizen Watch Co., Ltd. No. 12 Citizen Watch Co., Ltd. Tanashi Factory

Claims (36)

[Claims] 1. A guide bush is arranged in a vacuum chamber so that an auxiliary electrode made of an intermediate layer material is inserted into an opening of the guide bush so as to be connected to an auxiliary electrode power supply, and the guide bush is connected to a ground potential. After exhausting the inside, a sputter gas is introduced from the gas inlet, and a DC negative voltage is applied to the auxiliary electrode from the auxiliary electrode power supply to generate plasma around the auxiliary electrode in the guide bush opening, and the inner peripheral surface of the guide bush Then, the guide bush is arranged in the vacuum chamber so that an auxiliary electrode connected to a ground potential or a positive DC voltage is inserted into the inner surface of the opening of the guide bush, and after evacuation of the vacuum chamber, gas is introduced. A gas containing carbon is introduced into the vacuum chamber through the mouth, a DC voltage is applied to the guide bush, a DC voltage is applied to the anode, and an AC voltage is applied to the filament to generate plasma. Film forming method into the guide bush peripheral surface, characterized in that not forming a hard carbon film on the guide bush. 2. A guide bush is arranged in a vacuum chamber so that an auxiliary electrode made of an intermediate layer material is inserted into an opening of the guide bush so as to be connected to an auxiliary electrode power supply, and the guide bush is connected to a ground potential. After exhausting the inside, a sputter gas is introduced from the gas inlet, and a DC negative voltage is applied to the auxiliary electrode from the auxiliary electrode power supply to generate plasma around the auxiliary electrode in the guide bush opening, and the inner peripheral surface of the guide bush Then, the guide bush is arranged in a vacuum chamber so that an auxiliary electrode connected to a ground potential or a DC positive voltage is inserted into the inner surface of the opening of the guide bush. A special feature is to introduce a gas containing carbon into the vacuum chamber from the inlet, apply high frequency power to the guide bush, generate plasma, and form a hard carbon film on the guide bush. Film forming method into the guide bush peripheral surface to. 3. A guide bush is arranged in a vacuum chamber so that an auxiliary electrode made of an intermediate layer material is inserted into an opening of the guide bush so as to be connected to an auxiliary electrode power supply, and the guide bush is connected to a ground potential. After exhausting the inside, a sputter gas is introduced from the gas inlet, and a DC negative voltage is applied to the auxiliary electrode from the auxiliary electrode power supply to generate plasma around the auxiliary electrode in the guide bush opening, and the inner peripheral surface of the guide bush Then, the guide bush is arranged in a vacuum chamber so that an auxiliary electrode connected to a ground potential or a DC positive voltage is inserted into the inner surface of the opening of the guide bush. A gas containing carbon is introduced into the vacuum chamber from the inlet, a DC voltage is applied to the guide bush to generate plasma, and a hard carbon film is formed on the guide bush. Film forming method into the guide bush peripheral surface. 4. A guide bush is arranged in a vacuum chamber so that an auxiliary electrode made of an intermediate layer material is inserted into an opening of the guide bush so as to be connected to an auxiliary electrode power supply, and the inside of the vacuum chamber is evacuated. A sputtering gas is introduced, a DC negative voltage is applied to the guide bush from a DC power supply, and a DC negative voltage is applied to the auxiliary electrode from the auxiliary electrode power supply to generate plasma around the auxiliary electrode in the opening of the guide bush and guide. An intermediate layer is formed on the inner peripheral surface of the bush, and then the guide bush is arranged in the vacuum chamber so that an auxiliary electrode connected to a ground potential or a positive DC voltage is inserted into the opening inner surface of the guide bush. After evacuation, a gas containing carbon is introduced into the vacuum chamber from the gas inlet, a DC voltage is applied to the guide bush, a DC voltage is applied to the anode, and an AC voltage is applied to the filament. Film forming method into the guide bush peripheral surface, characterized in that to generate plasma to form a hard carbon film on the guide bush. 5. A guide bush is arranged in a vacuum chamber so that an auxiliary electrode made of an intermediate layer material is inserted into an opening of the guide bush so as to be connected to an auxiliary electrode power supply. A sputtering gas is introduced, a DC negative voltage is applied to the guide bush from a DC power supply, and a DC negative voltage is applied to the auxiliary electrode from the auxiliary electrode power supply to generate plasma around the auxiliary electrode in the opening of the guide bush and guide. An intermediate layer is formed on the inner peripheral surface of the bush, and then the guide bush is arranged in a vacuum chamber so that an auxiliary electrode connected to a ground potential or a DC positive voltage is inserted into the inner surface of the opening of the guide bush. After exhausting the gas, a gas containing carbon is introduced into the vacuum chamber from the gas inlet, high-frequency power is applied to the guide bush to generate plasma, and a hard carbon film is formed on the guide bush. Film forming method into the guide bush peripheral surface, characterized by forming. 6. A guide bush is arranged in a vacuum chamber so as to be connected to an auxiliary electrode power supply and to insert an auxiliary electrode made of an intermediate layer material into an opening of the guide bush. A sputtering gas is introduced, a DC negative voltage is applied to the guide bush from a DC power supply, and a DC negative voltage is applied to the auxiliary electrode from the auxiliary electrode power supply to generate plasma around the auxiliary electrode in the opening of the guide bush and guide. An intermediate layer is formed on the inner peripheral surface of the bush, and then the guide bush is arranged in a vacuum chamber so that an auxiliary electrode connected to a ground potential or a DC positive voltage is inserted into the inner surface of the opening of the guide bush. After exhausting the gas, a gas containing carbon is introduced into the vacuum chamber from the gas inlet, and a DC voltage is applied to the guide bush to generate plasma and form a hard carbon film on the guide bush. Film forming method into the guide bush peripheral surface, characterized by. 7. A guide bush is arranged in a vacuum chamber so as to be connected to an auxiliary electrode power supply and to insert an auxiliary electrode made of an intermediate layer material into an opening of the guide bush. After exhausting the inside, an AC voltage is applied to the auxiliary electrode from the auxiliary electrode power supply to form an intermediate layer on the inner peripheral surface of the guide bush by resistance heating evaporation, and then the ground potential or DC positive voltage is applied to the inner surface of the opening of the guide bush. The guide bush is placed in the vacuum chamber so that the auxiliary electrode connected to the vacuum chamber is inserted. After evacuation of the vacuum chamber, a gas containing carbon is introduced into the vacuum chamber through a gas inlet, and a DC voltage is applied to the guide bush. A guide bush characterized by forming a hard carbon film on the guide bush by applying a DC voltage to the anode and applying an AC voltage to the filament to generate plasma. Film forming method of the circumferential surface. 8. A guide bush is arranged in a vacuum chamber so that an auxiliary electrode made of an intermediate layer material is inserted into an opening of the guide bush so as to be connected to an auxiliary electrode power supply, and the guide bush is connected to a ground potential. After exhausting the inside, an AC voltage is applied to the auxiliary electrode from the auxiliary electrode power supply to form an intermediate layer on the inner peripheral surface of the guide bush by resistance heating evaporation, and then the ground potential or DC positive voltage is applied to the inner surface of the opening of the guide bush. The guide bush is placed in the vacuum chamber so that the auxiliary electrode connected to the vacuum chamber is inserted.After evacuation of the vacuum chamber, a gas containing carbon is introduced into the vacuum chamber through a gas inlet, and high-frequency power is supplied to the guide bush. A method for forming a coating on an inner peripheral surface of a guide bush, wherein a hard carbon film is formed on the guide bush by generating plasma by applying the plasma. 9. A guide bush is arranged in a vacuum chamber so that an auxiliary electrode made of an intermediate layer material is inserted into an opening of the guide bush so as to be connected to an auxiliary electrode power supply, and the guide bush is connected to a ground potential. After exhausting the inside, an AC voltage is applied to the auxiliary electrode from the auxiliary electrode power supply to form an intermediate layer on the inner peripheral surface of the guide bush by resistance heating evaporation, and then the ground potential or DC positive voltage is applied to the inner surface of the opening of the guide bush. The guide bush is placed in the vacuum chamber so that the auxiliary electrode connected to the vacuum chamber is inserted.After evacuation of the vacuum chamber, a gas containing carbon is introduced into the vacuum chamber through a gas inlet, and a DC voltage is applied to the guide bush. A method for forming a coating on an inner peripheral surface of a guide bush, wherein a hard carbon film is formed on the guide bush by generating plasma by applying the plasma. 10. A guide bush is arranged in a vacuum chamber so that an auxiliary electrode made of an intermediate layer material is inserted into an opening of the guide bush so as to be connected to an auxiliary electrode power supply. A DC negative voltage is applied from a DC power supply, and an AC voltage is applied to the auxiliary electrode from an auxiliary electrode power supply to form an intermediate layer on the inner peripheral surface of the guide bush by a resistance heating vapor deposition method, and then ground on the inner surface of the opening of the guide bush. A guide bush is placed in a vacuum chamber so that an auxiliary electrode connected to a potential or a DC positive voltage is inserted. After evacuation of the vacuum chamber, a gas containing carbon is introduced into the vacuum chamber through a gas inlet, and the guide bush is introduced. DC voltage to the anode, DC voltage to the anode, AC voltage to the filament to generate plasma and form a hard carbon film on the guide bush. Guide coat forming method of the bushing inner circumferential surface that. 11. A guide bush is arranged in a vacuum chamber so as to connect to an auxiliary electrode power supply and insert an auxiliary electrode made of an intermediate layer material into an opening of the guide bush. A DC negative voltage is applied from a DC power supply, and an AC voltage is applied to the auxiliary electrode from an auxiliary electrode power supply to form an intermediate layer on the inner peripheral surface of the guide bush by a resistance heating vapor deposition method, and then ground on the inner surface of the opening of the guide bush. A guide bush is placed in a vacuum chamber so that an auxiliary electrode connected to a potential or a DC positive voltage is inserted. After evacuation of the vacuum chamber, a gas containing carbon is introduced into the vacuum chamber through a gas inlet, and the guide is introduced. A method for forming a coating on an inner peripheral surface of a guide bush, wherein a hard carbon film is formed on the guide bush by applying high frequency power to the bush to generate plasma. 12. A guide bush is arranged in a vacuum chamber so as to connect to an auxiliary electrode power supply and insert an auxiliary electrode made of an intermediate layer material into an opening of the guide bush. A DC negative voltage is applied from a DC power supply, and an AC voltage is applied to the auxiliary electrode from an auxiliary electrode power supply to form an intermediate layer on the inner peripheral surface of the guide bush by a resistance heating vapor deposition method, and then ground on the inner surface of the opening of the guide bush. A guide bush is placed in a vacuum chamber so that an auxiliary electrode connected to a potential or a DC positive voltage is inserted. After evacuation of the vacuum chamber, a gas containing carbon is introduced into the vacuum chamber through a gas inlet, and the guide is introduced. A method for forming a coating on an inner peripheral surface of a guide bush, wherein a hard carbon film is formed on the guide bush by applying a DC voltage to the bush to generate plasma. 13. A guide bush is arranged in a vacuum chamber so as to be connected to an auxiliary electrode power supply and to insert an auxiliary electrode made of an intermediate layer material into an opening of the guide bush. After exhausting the inside, a sputter gas is introduced from the gas inlet, and high-frequency power is applied to the auxiliary electrode from the auxiliary electrode power source to generate plasma around the auxiliary electrode in the guide bush opening, and the inner peripheral surface of the guide bush After forming an intermediate layer, the guide bush is arranged in a vacuum chamber so that an auxiliary electrode connected to a ground potential or a DC positive voltage is inserted into the inner surface of the opening of the guide bush. A gas containing carbon is introduced into the vacuum chamber from above, a DC voltage is applied to the guide bush, a DC voltage is applied to the anode, and an AC voltage is applied to the filament to generate plasma. Film forming method into the guide bush circumferential surface and forming a hard carbon film is allowed to guide bush. 14. A guide bush is arranged in a vacuum chamber so as to connect to an auxiliary electrode power supply and insert an auxiliary electrode made of an intermediate layer material into an opening of the guide bush, wherein the guide bush is connected to a ground potential, After exhausting the inside, a sputter gas is introduced from the gas inlet, and high-frequency power is applied to the auxiliary electrode from the auxiliary electrode power source to generate plasma around the auxiliary electrode in the guide bush opening, and the inner peripheral surface of the guide bush Then, the guide bush is arranged in a vacuum chamber so that an auxiliary electrode connected to a ground potential or a DC positive voltage is inserted into the inner surface of the opening of the guide bush. A gas containing carbon is introduced into the vacuum chamber from the inlet, and high-frequency power is applied to the guide bush to generate plasma, thereby forming a hard carbon film on the guide bush. Film forming method into the guide bush peripheral surface, wherein. 15. A guide bush is arranged in a vacuum chamber so that an auxiliary electrode made of an intermediate layer material is inserted into an opening of the guide bush so as to be connected to an auxiliary electrode power supply, and the guide bush is connected to a ground potential. After exhausting the inside, a sputter gas is introduced from the gas inlet, and high-frequency power is applied to the auxiliary electrode from the auxiliary electrode power source to generate plasma around the auxiliary electrode in the guide bush opening, and the inner peripheral surface of the guide bush Then, the guide bush is arranged in a vacuum chamber so that an auxiliary electrode connected to a ground potential or a DC positive voltage is inserted into the inner surface of the opening of the guide bush. A gas containing carbon is introduced into the vacuum chamber from the inlet, and a DC voltage is applied to the guide bush to generate plasma and form a hard carbon film on the guide bush. Film forming method into the guide bush peripheral surface, characterized. 16. A guide bush is arranged in a vacuum chamber so that an auxiliary electrode made of an intermediate layer material is inserted into an opening of the guide bush to be connected to an auxiliary electrode power supply, and the inside of the vacuum chamber is evacuated. A sputtering gas is introduced, a DC negative voltage is applied to the guide bush from a DC power supply, and a high-frequency power is applied to the auxiliary electrode from the auxiliary electrode power supply to generate plasma around the auxiliary electrode in the opening of the guide bush. An intermediate layer is formed on the inner peripheral surface of the guide bush, and then the guide bush is arranged in the vacuum chamber so that an auxiliary electrode connected to a ground potential or a DC positive voltage is inserted into the opening inner surface of the guide bush, and the vacuum chamber is evacuated. Then, a gas containing carbon is introduced into the vacuum chamber from the gas inlet, a DC voltage is applied to the guide bush, a DC voltage is applied to the anode, and an AC voltage is applied to the filament. Film forming method into the guide bush peripheral surface, characterized in that to generate plasma to form a hard carbon film on the guide bush Te. 17. A guide bush is arranged in a vacuum chamber so that an auxiliary electrode made of an intermediate layer material is inserted into an opening of the guide bush so as to be connected to an auxiliary electrode power supply. A sputter gas is introduced, a DC negative voltage is applied to the guide bush from a DC power supply, and a high-frequency power is applied to the auxiliary electrode from the auxiliary electrode power supply to generate plasma around the auxiliary electrode in the guide bush opening and guide bush. An intermediate layer is formed on the inner peripheral surface of the guide bush, and then the guide bush is arranged in the vacuum chamber so that an auxiliary electrode connected to a ground potential or a DC positive voltage is inserted into the inner surface of the opening of the guide bush. After evacuation, a gas containing carbon is introduced into the vacuum chamber from the gas inlet, high-frequency power is applied to the guide bush to generate plasma, and a hard carbon film is applied to the guide bush. Film forming method into the guide bush circumferential surface and forming. 18. A guide bush is arranged in a vacuum chamber so as to be connected to an auxiliary electrode power supply and to insert an auxiliary electrode made of an intermediate layer material into an opening of the guide bush. A sputter gas is introduced, a DC negative voltage is applied to the guide bush from a DC power supply, and a high-frequency power is applied to the auxiliary electrode from the auxiliary electrode power supply to generate plasma around the auxiliary electrode in the guide bush opening and guide bush. An intermediate layer is formed on the inner peripheral surface of the guide bush, and then the guide bush is arranged in the vacuum chamber so that an auxiliary electrode connected to a ground potential or a DC positive voltage is inserted into the inner surface of the opening of the guide bush. After evacuation, a gas containing carbon is introduced into the vacuum chamber from the gas inlet, a DC voltage is applied to the guide bush to generate plasma, and a hard carbon film is formed on the guide bush. Film forming method into the guide bush peripheral surface, characterized by forming. 19. A guide bush is arranged inside a vacuum chamber so that an auxiliary electrode made of a first intermediate layer material is inserted into an opening of the guide bush so as to be connected to an auxiliary electrode power supply, and the guide bush is connected to a ground potential. After evacuation of the vacuum chamber, a sputter gas is introduced from the gas inlet, and a DC negative voltage is applied to the auxiliary electrode from the auxiliary electrode power supply to generate plasma around the auxiliary electrode in the opening of the guide bush. Forming a first intermediate layer on the inner peripheral surface of the first electrode, and disposing a guide bush in the vacuum chamber so as to insert an auxiliary electrode made of a second intermediate layer material, and applying a DC negative voltage from an auxiliary electrode power supply to the auxiliary electrode The plasma is generated around the auxiliary electrode in the opening of the guide bush to form a second intermediate layer on the inner peripheral surface of the guide bush. A guide bush is placed in the vacuum chamber so that the auxiliary electrode connected to the positive voltage is inserted.After evacuation of the vacuum chamber, a gas containing carbon is introduced into the vacuum chamber through a gas inlet, and direct current is applied to the guide bush. A method for forming a coating on the inner peripheral surface of a guide bush, comprising applying a voltage, applying a DC voltage to an anode, and applying an AC voltage to a filament to generate plasma to form a hard carbon film on the guide bush. 20. A guide bush is arranged in a vacuum chamber so that an auxiliary electrode made of a first intermediate layer material is inserted into an opening of the guide bush and connected to an auxiliary electrode power supply, and the guide bush is connected to a ground potential. After evacuation of the vacuum chamber, a sputter gas is introduced from the gas inlet, and a DC negative voltage is applied to the auxiliary electrode from the auxiliary electrode power supply to generate plasma around the auxiliary electrode in the opening of the guide bush and guide the plasma. A first intermediate layer is formed on the inner peripheral surface of the bush, and a guide bush is arranged in the vacuum chamber so as to insert an auxiliary electrode made of a second intermediate layer material. To generate a plasma around the auxiliary electrode in the opening of the guide bush to form a second intermediate layer on the inner peripheral surface of the guide bush. The guide bush is placed in the vacuum chamber so that the auxiliary electrode connected to the DC positive voltage is inserted. After evacuation of the vacuum chamber, a gas containing carbon is introduced into the vacuum chamber from the gas inlet, and the guide bush is inserted. Forming a hard carbon film on the guide bush by applying high frequency power to the guide bush to generate plasma. 21. A guide bush is arranged inside a vacuum chamber so that an auxiliary electrode made of a first intermediate layer material is inserted into an opening of the guide bush and connected to an auxiliary electrode power supply, and the guide bush is connected to a ground potential. After evacuation of the vacuum chamber, a sputter gas is introduced from the gas inlet, and a DC negative voltage is applied to the auxiliary electrode from the auxiliary electrode power supply to generate plasma around the auxiliary electrode in the opening of the guide bush and guide the plasma. A first intermediate layer is formed on the inner peripheral surface of the bush, and a guide bush is arranged in the vacuum chamber so as to insert an auxiliary electrode made of a second intermediate layer material. To generate a plasma around the auxiliary electrode in the opening of the guide bush to form a second intermediate layer on the inner peripheral surface of the guide bush. After placing the guide bush in the vacuum chamber so as to insert the auxiliary electrode connected to the DC positive voltage, exhausting the vacuum chamber, introducing a gas containing carbon into the vacuum chamber from the gas inlet, A method for forming a coating on an inner peripheral surface of a guide bush, wherein a hard carbon film is formed on the guide bush by applying a DC voltage to the bush to generate plasma. 22. A guide bush is arranged inside a vacuum chamber so as to be connected to an auxiliary electrode power supply and to insert an auxiliary electrode made of a first intermediate layer material into an opening of the guide bush. Introduce sputter gas from the gas inlet,
Apply a negative DC voltage from a DC power supply to the guide bush,
A DC negative voltage is applied to the auxiliary electrode from the auxiliary electrode power source to generate plasma around the auxiliary electrode in the opening of the guide bush, thereby forming a first intermediate layer on the inner peripheral surface of the guide bush, and a second intermediate layer. A guide bush is arranged in a vacuum chamber so that an auxiliary electrode made of a material is inserted, and a DC negative voltage is applied to the auxiliary electrode from an auxiliary electrode power source to generate plasma around the auxiliary electrode in an opening of the guide bush and guide. A second intermediate layer is formed on the inner peripheral surface of the bush, and then the guide bush is arranged in the vacuum chamber so that an auxiliary electrode connected to a ground potential or a DC positive voltage is inserted into the inner surface of the opening of the guide bush. After evacuation of the chamber, a gas containing carbon is introduced into the vacuum chamber from the gas inlet, a DC voltage is applied to the guide bush, a DC voltage is applied to the anode, and an AC voltage is applied to the filament. Film forming method into the guide bush peripheral surface, characterized in that to generate plasma to form a hard carbon film on the guide bush Te. 23. A guide bush is arranged inside a vacuum chamber so as to be connected to an auxiliary electrode power supply and inserted into the opening of the guide bush so as to insert an auxiliary electrode made of a first intermediate layer material. Introduce sputter gas from the gas inlet,
Apply a negative DC voltage from a DC power supply to the guide bush,
A DC negative voltage is applied to the auxiliary electrode from the auxiliary electrode power source to generate plasma around the auxiliary electrode in the opening of the guide bush, thereby forming a first intermediate layer on the inner peripheral surface of the guide bush, and a second intermediate layer. A guide bush is arranged in a vacuum chamber so that an auxiliary electrode made of a material is inserted, and a DC negative voltage is applied to the auxiliary electrode from an auxiliary electrode power source to generate plasma around the auxiliary electrode in an opening of the guide bush and guide. A second intermediate layer is formed on the inner peripheral surface of the bush, and then the guide bush is arranged in the vacuum chamber so that an auxiliary electrode connected to the ground potential is inserted into the inner surface of the opening of the guide bush. After evacuation, a gas containing carbon is introduced into the vacuum chamber from the gas inlet, and high-frequency power is applied to the guide bush to generate plasma and form a hard carbon film on the guide bush. Film forming method into the guide bush peripheral surface to. 24. A guide bush is arranged inside a vacuum chamber so as to connect to an auxiliary electrode power supply and insert an auxiliary electrode made of a first intermediate layer material into an opening of the guide bush. Introduce sputter gas from the gas inlet,
Apply a negative DC voltage from a DC power supply to the guide bush,
A DC negative voltage is applied to the auxiliary electrode from the auxiliary electrode power source to generate plasma around the auxiliary electrode in the opening of the guide bush, thereby forming a first intermediate layer on the inner peripheral surface of the guide bush, and a second intermediate layer. A guide bush is arranged in a vacuum chamber so that an auxiliary electrode made of a material is inserted, and a DC negative voltage is applied to the auxiliary electrode from an auxiliary electrode power source to generate plasma around the auxiliary electrode in an opening of the guide bush and guide. Forming a second intermediate layer on the inner peripheral surface of the bush, and thereafter disposing the guide bush in the vacuum chamber so as to insert an auxiliary electrode connected to a ground potential or a positive DC voltage into the inner surface of the opening of the guide bush; After evacuation of the vacuum chamber, a gas containing carbon is introduced into the vacuum chamber from a gas inlet, and a DC voltage is applied to the guide bush to generate plasma, thereby forming a hard carbon film on the guide bush. Film forming method into the guide bush peripheral surface, characterized by forming. 25. A guide bush which is connected to an auxiliary electrode power supply in an opening of the guide bush and is arranged inside the vacuum chamber so that an auxiliary electrode made of a first intermediate layer material is inserted, and the guide bush is connected to a ground potential. Then, after evacuating the vacuum chamber, an AC voltage is applied to the auxiliary electrode from the auxiliary electrode power source to form a first intermediate layer on the inner peripheral surface of the guide bush by a resistance heating evaporation method. A guide bush is arranged in a vacuum chamber so as to insert an auxiliary electrode, and an AC voltage is applied from the auxiliary electrode power supply to the auxiliary electrode to form a second intermediate layer on the inner peripheral surface of the guide bush by resistance heating evaporation. Then, the guide bush is arranged in the vacuum chamber so that an auxiliary electrode connected to the ground potential or the DC positive voltage is inserted into the inner surface of the opening of the guide bush, and after evacuation of the vacuum chamber, carbon is introduced from the gas inlet. Gas into the vacuum chamber, apply a DC voltage to the guide bush, apply a DC voltage to the anode, apply an AC voltage to the filament to generate plasma, and form a hard carbon film on the guide bush. Characteristic method of forming a coating on the inner peripheral surface of the guide bush. 26. A guide bush is arranged inside a vacuum chamber so that an auxiliary electrode made of a first intermediate layer material is inserted into an opening of the guide bush and connected to an auxiliary electrode power supply, and the guide bush is connected to a ground potential. Then, after evacuating the vacuum chamber, an AC voltage is applied to the auxiliary electrode from the auxiliary electrode power source to form a first intermediate layer on the inner peripheral surface of the guide bush by a resistance heating evaporation method. A guide bush is arranged in a vacuum chamber so as to insert an auxiliary electrode, and an AC voltage is applied from the auxiliary electrode power supply to the auxiliary electrode to form a second intermediate layer on the inner peripheral surface of the guide bush by resistance heating evaporation. After that, the guide bush is arranged in the vacuum chamber so that an auxiliary electrode connected to the ground potential or the DC positive voltage is inserted into the inner surface of the opening of the guide bush, and the inside of the vacuum chamber is evacuated. Containing gas is introduced into the vacuum chamber, the film formation method to the guide bush peripheral surface, characterized in that by applying a high frequency power to the guide bush to generate plasma to form a hard carbon film on the guide bush. 27. A guide bush is arranged inside a vacuum chamber such that an auxiliary electrode made of a first intermediate layer material is connected to an auxiliary electrode power supply in an opening of the guide bush, and the guide bush is connected to a ground potential. Then, after evacuating the vacuum chamber, an AC voltage is applied to the auxiliary electrode from the auxiliary electrode power source to form a first intermediate layer on the inner peripheral surface of the guide bush by a resistance heating evaporation method. A guide bush is arranged in a vacuum chamber so as to insert an auxiliary electrode, and an AC voltage is applied from the auxiliary electrode power supply to the auxiliary electrode to form a second intermediate layer on the inner peripheral surface of the guide bush by resistance heating evaporation. After that, the guide bush is arranged in the vacuum chamber so that the auxiliary electrode connected to the ground potential or the DC positive voltage is inserted into the inner surface of the opening of the guide bush, and the inside of the vacuum chamber is evacuated. A method of forming a hard carbon film on a guide bush by introducing a gas containing nitrogen into a vacuum chamber, applying a DC voltage to the guide bush to generate plasma, and forming a hard carbon film on the guide bush. . 28. A guide bush is arranged in a vacuum chamber so that an auxiliary electrode made of a first intermediate layer material is inserted into an opening of the guide bush and connected to an auxiliary electrode power supply, and after the vacuum chamber is evacuated. Applying a negative DC voltage from a DC power supply to the guide bush, applying an AC voltage from the auxiliary electrode power supply to the auxiliary electrode, and forming a first intermediate layer on the inner peripheral surface of the guide bush by resistance heating evaporation. The guide bush is arranged in the vacuum chamber so as to insert the auxiliary electrode made of the intermediate layer material of No. 2 and an AC voltage is applied to the auxiliary electrode from the auxiliary electrode power source, and the guide bush is formed on the inner peripheral surface of the guide bush by the resistance heating vapor deposition method. Then, the guide bush was arranged in the vacuum chamber so that an auxiliary electrode connected to a ground potential or a DC positive voltage was inserted into the inner surface of the opening of the guide bush, and the vacuum chamber was evacuated. ,
A gas containing carbon is introduced into the vacuum chamber from a gas inlet, a DC voltage is applied to the guide bush, a DC voltage is applied to the anode, an AC voltage is applied to the filament, and plasma is generated, and a hard carbon is applied to the guide bush. A method for forming a film on an inner peripheral surface of a guide bush, comprising forming a film. 29. A guide bush is arranged in a vacuum chamber so that an auxiliary electrode made of a first intermediate layer material is inserted into an opening of the guide bush so as to be connected to an auxiliary electrode power supply, and after the vacuum chamber is evacuated. Applying a negative DC voltage from a DC power supply to the guide bush, applying an AC voltage from the auxiliary electrode power supply to the auxiliary electrode, and forming a first intermediate layer on the inner peripheral surface of the guide bush by resistance heating evaporation. The guide bush is arranged in the vacuum chamber so as to insert the auxiliary electrode made of the intermediate layer material of No. 2 and an AC voltage is applied to the auxiliary electrode from the auxiliary electrode power source, and the guide bush is formed on the inner peripheral surface of the guide bush by the resistance heating vapor deposition method. Then, the guide bush is arranged in a vacuum chamber so that an auxiliary electrode connected to a ground potential or a DC positive voltage is inserted into the inner surface of the opening of the guide bush, and the inside of the vacuum chamber is evacuated. A gas containing carbon is introduced into the vacuum chamber through a gas inlet, and high-frequency power is applied to the guide bush to generate plasma to form a hard carbon film on the guide bush. Film formation method. 30. A guide bush is arranged inside a vacuum chamber so that an auxiliary electrode made of a first intermediate layer material is inserted into an opening of the guide bush so as to be connected to an auxiliary electrode power supply, and the inside of the vacuum chamber is evacuated. Applying a negative DC voltage from a DC power supply to the guide bush, applying an AC voltage from the auxiliary electrode power supply to the auxiliary electrode, and forming a first intermediate layer on the inner peripheral surface of the guide bush by resistance heating evaporation. The guide bush is arranged in the vacuum chamber so as to insert the auxiliary electrode made of the intermediate layer material of No. 2 and an AC voltage is applied to the auxiliary electrode from the auxiliary electrode power source, and the guide bush is formed on the inner peripheral surface of the guide bush by the resistance heating vapor deposition method. Then, the guide bush is arranged in a vacuum chamber so that an auxiliary electrode connected to a ground potential or a DC positive voltage is inserted into the inner surface of the opening of the guide bush, and the inside of the vacuum chamber is evacuated. A gas containing carbon is introduced into the vacuum chamber from a gas inlet, and a DC voltage is applied to the guide bush to generate plasma to form a hard carbon film on the guide bush. Film formation method. 31. A guide bush is arranged in a vacuum chamber so that an auxiliary electrode made of a first intermediate layer material is connected to an auxiliary electrode power supply in an opening of the guide bush, and the guide bush is connected to a ground potential. Then, after evacuation of the vacuum chamber, a sputter gas is introduced from a gas inlet, high-frequency power is applied to the auxiliary electrode from an auxiliary electrode power source, plasma is generated around the auxiliary electrode in the guide bush opening, and the A first intermediate layer is formed on the inner peripheral surface, and a guide bush is arranged in a vacuum chamber so as to insert an auxiliary electrode made of a second intermediate layer material. Plasma is generated around the auxiliary electrode in the opening of the guide bush to form a second intermediate layer on the inner peripheral surface of the guide bush. A guide bush is placed in the vacuum chamber so that the auxiliary electrode connected to the positive voltage is inserted.After evacuation of the vacuum chamber, a gas containing carbon is introduced into the vacuum chamber through a gas inlet, and direct current is applied to the guide bush. A method for forming a coating on the inner peripheral surface of a guide bush, comprising applying a voltage, applying a DC voltage to an anode, and applying an AC voltage to a filament to generate plasma to form a hard carbon film on the guide bush. 32. A guide bush is arranged in a vacuum chamber so that an auxiliary electrode made of a first intermediate layer material is inserted into an opening of the guide bush and connected to an auxiliary electrode power supply, and the guide bush is connected to a ground potential. After evacuation of the vacuum chamber, a sputter gas is introduced from a gas inlet, high frequency power is applied to the auxiliary electrode from an auxiliary electrode power source, and plasma is generated around the auxiliary electrode in the opening of the guide bush. A first intermediate layer is formed on the inner peripheral surface of the substrate, and a guide bush is arranged in a vacuum chamber so that an auxiliary electrode made of a material of the second intermediate layer is inserted. Then, a plasma is generated around the auxiliary electrode in the opening of the guide bush to form a second intermediate layer on the inner peripheral surface of the guide bush. After placing the guide bush in the vacuum chamber so as to insert the auxiliary electrode connected to the DC positive voltage, exhausting the vacuum chamber, introducing a gas containing carbon into the vacuum chamber from the gas inlet, A method for forming a coating on an inner peripheral surface of a guide bush, wherein a hard carbon film is formed on the guide bush by applying high frequency power to the bush to generate plasma. 33. A guide bush is arranged in a vacuum chamber so that an auxiliary electrode made of a first intermediate layer material is inserted into an opening of the guide bush so as to be connected to an auxiliary electrode power supply, and the guide bush is connected to a ground potential. After evacuation of the vacuum chamber, a sputter gas is introduced from a gas inlet, high frequency power is applied to the auxiliary electrode from an auxiliary electrode power source, and plasma is generated around the auxiliary electrode in the opening of the guide bush. A first intermediate layer is formed on the inner peripheral surface of the substrate, and a guide bush is arranged in a vacuum chamber so that an auxiliary electrode made of a material of the second intermediate layer is inserted. Then, a plasma is generated around the auxiliary electrode in the opening of the guide bush to form a second intermediate layer on the inner peripheral surface of the guide bush. After placing the guide bush in the vacuum chamber so as to insert the auxiliary electrode connected to the DC positive voltage, exhausting the vacuum chamber, introducing a gas containing carbon into the vacuum chamber from the gas inlet, A method for forming a coating on an inner peripheral surface of a guide bush, wherein a hard carbon film is formed on the guide bush by applying a DC voltage to the bush to generate plasma. 34. A guide bush which is connected to an auxiliary electrode power supply in an opening of the guide bush and is arranged inside the vacuum chamber so as to insert an auxiliary electrode made of a first intermediate layer material. Introduce sputter gas from the gas inlet,
Apply a negative DC voltage from a DC power supply to the guide bush,
Applying high frequency power from the auxiliary electrode power source to the auxiliary electrode to generate plasma around the auxiliary electrode in the opening of the guide bush, thereby forming a first intermediate layer on the inner peripheral surface of the guide bush, A guide bush is arranged in a vacuum chamber so as to insert an auxiliary electrode consisting of: an auxiliary electrode power source applies high frequency power to the auxiliary electrode to generate plasma around the auxiliary electrode in an opening of the guide bush; A second intermediate layer is formed on the inner peripheral surface, and then the guide bush is arranged in the vacuum chamber so that an auxiliary electrode connected to a ground potential or a positive DC voltage is inserted into the inner surface of the opening of the guide bush. After exhausting the gas, a gas containing carbon is introduced into the vacuum chamber from the gas inlet, a DC voltage is applied to the guide bush, a DC voltage is applied to the anode, and an AC voltage is applied to the filament. Film forming method into the guide bush peripheral surface, characterized in that to generate plasma to form a hard carbon film on the guide bush Te. 35. A guide bush which is connected to an auxiliary electrode power supply in an opening of the guide bush and is arranged inside the vacuum chamber so that an auxiliary electrode made of a first intermediate layer material is inserted. Introduce sputter gas from the gas inlet,
Apply a negative DC voltage from a DC power supply to the guide bush,
Applying high frequency power from the auxiliary electrode power source to the auxiliary electrode to generate plasma around the auxiliary electrode in the opening of the guide bush, thereby forming a first intermediate layer on the inner peripheral surface of the guide bush, A guide bush is arranged in a vacuum chamber so as to insert an auxiliary electrode consisting of: an auxiliary electrode power source applies high frequency power to the auxiliary electrode to generate plasma around the auxiliary electrode in an opening of the guide bush; Forming a second intermediate layer on the inner peripheral surface, and then arranging the guide bush in the vacuum chamber so that an auxiliary electrode connected to a ground potential or a positive DC voltage is inserted into the inner surface of the opening of the guide bush; After exhausting the inside, a gas containing carbon is introduced into the vacuum chamber from the gas inlet, and high-frequency power is applied to the guide bush to generate plasma, and a hard carbon film is formed on the guide bush. Film forming method into the guide bush circumferential surface and forming. 36. A guide bush is arranged in a vacuum chamber so that an auxiliary electrode made of a first intermediate layer material is inserted into an opening of the guide bush and connected to an auxiliary electrode power supply. Introduce sputter gas from the gas inlet,
Apply a negative DC voltage from a DC power supply to the guide bush,
Applying high frequency power from the auxiliary electrode power source to the auxiliary electrode to generate plasma around the auxiliary electrode in the opening of the guide bush, thereby forming a first intermediate layer on the inner peripheral surface of the guide bush, A guide bush is arranged in a vacuum chamber so as to insert an auxiliary electrode consisting of: an auxiliary electrode power source applies high frequency power to the auxiliary electrode to generate plasma around the auxiliary electrode in an opening of the guide bush; Forming a second intermediate layer on the inner peripheral surface, and then arranging the guide bush in the vacuum chamber so that an auxiliary electrode connected to a ground potential or a positive DC voltage is inserted into the inner surface of the opening of the guide bush; After exhausting the inside, a gas containing carbon is introduced from the gas inlet into the vacuum chamber, a DC voltage is applied to the guide bush to generate plasma, and a hard carbon film is formed on the guide bush. Film forming method into the guide bush peripheral surface, characterized by forming.