JPH10321753A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress warpage at corners of a package to sufficiently secure an electric-path formation region. SOLUTION: An insulating package 21 is provided in its outer periphery with radially extended and slit-sectioned electrodes 22. The electrodes at 4 corners of the packages have a longest length, and the electrodes at the middle of 4 sides thereof have a shortest length. The slit function of the sectioned electrodes 22 suppresses warpages of the corners of the package, while the longer electrodes 22 increase a connection area with a motherboard at the package corners. As a result, the warpage of the package at the corners at the time of its mounting can be eliminated to avoid improper solder connection. Further, wiring areas for electric paths at the middle of the 4 sides of the package 21 can be increased, and thus degradation in its current density and in its heat radiation ability can be prevented.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a semiconductor device, and more particularly to an improvement in a cross-sectional electrode formed for making electrical connection with a mounted semiconductor element.

[0002]

2. Description of the Related Art FIG. 7 shows a semiconductor device having the above-mentioned cross-sectional electrodes formed thereon. FIG. 7A is a plan view, and FIG. 7B is an enlarged view of a portion A in FIG. 7A. Conventional cross-sectional electrodes 2 are formed and arranged in a semicircular shape on each side of the insulating package 1. And its cross section
(B-B cross section), as shown in FIG. 8, has a structure in which the through hole is cut by a plane including the axis.
In addition, 6 is a through-hole shoulder part.

[0003] The above-mentioned cross-sectional electrode 2 is made of an insulating package 1.
A circular through hole is formed at a position to be the outer periphery of the insulating package 1, and metal electrodes are formed on the inner wall surface of the through hole and the upper surface of the insulating package 1 by plating or the like. Then, the insulating package 1 is formed by cutting off the front end side from the center of the through hole (metal electrode) with a mold or the like along the outer peripheral edge of the insulating package 1.

[0004]

However, the above-mentioned conventional semiconductor device has the following problems. That is, in the semiconductor device having the above configuration, the package corner is warped due to a difference in linear expansion coefficient between the resin 5 for sealing the semiconductor element 3 and the insulating package 1. Therefore, when the semiconductor device is mounted on a motherboard or the like, there is a problem that a solder connection failure with the motherboard occurs at the package corner.

Further, as shown in FIG.
Is formed at a right angle. Therefore, when the outer peripheral portion of the insulating package 1 is cut off from the center of the through-hole on which the metal electrode is plated with a mold or the like at the time of forming the cross-sectional electrode, stress is concentrated on the through-hole shoulder portion 6 and the through-hole shoulder portion 6 is formed.
There is a problem that a crack is generated in the device.

SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor device which can alleviate the warpage of a package corner portion, does not generate a crack in a through-hole shoulder portion at the time of forming a cross-sectional electrode, and can sufficiently secure an electric path forming region. .

[0007]

According to a first aspect of the present invention, there is provided a semiconductor device comprising: an insulating package; a semiconductor element mounted on the insulating package and sealed with a resin; In a semiconductor device having a cross-sectional electrode formed on the outer periphery of the insulating package and an electric path formed on the insulating package and electrically connecting the semiconductor element and the cross-sectional electrode, the cross-sectional electrode is formed in a slit shape. The length of the sectional electrode is such that the sectional electrode located at the corner of the insulating package is the longest, the sectional electrode located at the center of one side is the shortest, and the length of the sectional electrode is between the corner and the center. The cross-sectional electrodes located are sequentially shortened in the order of arrangement from the corners to the center.

According to the above configuration, the sectional electrode is formed in a slit shape. Therefore, the warpage generated at the corner portion of the insulating package is reduced by the deformation of the slit-shaped cross-sectional electrode during mounting on a motherboard or the like. Further, the length of the cross-sectional electrode is the longest at the corner of the insulating package. Therefore, the connection area with the motherboard at the corner portion at the time of mounting is increased. Thus, the warpage at the corners of the insulating package is alleviated, and the connection area of the cross-sectional electrodes at the corners is increased, whereby the warpage at the corners is corrected and poor solder connection is prevented.

Further, the length of the sectional electrode is the shortest at the center of one side of the insulating package. Therefore, the wiring area of the electric circuit at the center of the one side of the insulating package does not become narrow, and it is not necessary to make the width of the electric circuit narrow. As a result, it is possible to avoid a decrease in current density and a decrease in heat dissipation due to a decrease in the width of the electric circuit.

According to a second aspect of the present invention, in the semiconductor device according to the first aspect of the present invention, the cross-sectional electrodes are radially arranged.

According to the above configuration, since the cross-sectional electrodes are arranged radially, a connection point of the cross-sectional electrode at the corner portion with the electric circuit is shifted toward the semiconductor element. Therefore, the length of the electric path for the cross-sectional electrode located at the corner portion is reduced.

According to a third aspect of the present invention, in the semiconductor device according to the first aspect of the present invention, the cross-sectional electrode is formed such that a taper is formed at an edge portion of an opening in an upper surface and a lower surface of the insulating package. Features.

According to the above configuration, the edge of the opening in the sectional electrode is tapered. Therefore, when the outer peripheral portion of the insulating package is cut off together with the tip of the cross-sectional electrode using a mold or the like during the formation of the cross-sectional electrode, the stress generated at the edge of the cross-sectional electrode is dispersed, and cracks are formed at the edge. Does not occur.

[0014]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the present invention will be described in detail with reference to the illustrated embodiments. FIG. 1 is a plan view of a semiconductor device according to the present embodiment, and FIG. 1B is an enlarged view of a portion B in FIG. 1A. FIG. 2 is a perspective view of the semiconductor device shown in FIG.

In the semiconductor device according to the present embodiment, a slit-shaped cross-sectional electrode 22 made of copper or the like is radially provided on an outer peripheral portion of an insulating package 21. The length of the cross-sectional electrode 22 is the longest at the corner of the insulating package 21 and the shortest at the center of each of the four sides. still,
Reference numeral 24 denotes an electric path for electrically connecting the sectional electrode 22 to the semiconductor element 25, reference numeral 36 denotes a metal wire for wire bonding, and reference numeral 37 denotes a resin for sealing the semiconductor element 25.

As described above, in the semiconductor device according to the present embodiment, the slit-shaped cross-sectional electrodes 22 are radially arranged on the outer peripheral portion of the insulating package 21. Therefore, the warpage generated at the corner of the insulating package 21 due to the difference in linear expansion coefficient between the insulating package 21 and the resin 37 is reduced by the deformation of the slit-shaped cross-sectional electrode 22 when the semiconductor device is mounted on a motherboard or the like. . Therefore, it is possible to avoid the occurrence of a poor solder connection with the motherboard at the corner portion, which occurs during the mounting. Further, by arranging the cross-sectional electrodes 22 radially, the connection point 23 of the corner cross-sectional electrode 22 with the electric circuit 24 is closer to the semiconductor element 25 side. Length can be shortened.

Further, the length of the cross-sectional electrode 22 is the longest at the corner of the insulating package 21, the shortest at the center of each side, and is gradually shortened from the corner to the center in the order of arrangement. I have to. Therefore, the wiring area of the electric circuit 24 at the center of each side of the insulating package 21 is wide, and it is not necessary to reduce the width of the electric circuit 24. This will be described with reference to FIG.

In FIG. 3, if all the cross-sectional electrodes 2 have the same length as in the prior art, as indicated by "C", the distance a between the cross-sectional electrode 2a at the center of the side 26 and the semiconductor element 25 becomes smaller. ,
As shown by "D", it is necessary to arrange five electric paths 4.
On the other hand, as shown by “E”, when the length of the cross-sectional electrode 22a at the center of the side 26 is shorter than the length of the cross-sectional electrode 22 at the corner, the cross-sectional electrode 22a and the semiconductor element 2
The distance b with respect to 5 is wider than the distance a. Therefore,
As shown by “F”, five electric circuits 24 may be arranged in the interval b wider than the interval a, and the width of the electric circuit 24 can be made wider than the width of the electric circuit 4. As a result, it is possible to avoid a decrease in current density and a decrease in heat dissipation due to a decrease in the width of the electric circuit 24. In FIG. 3, the cross-sectional electrodes 22 are arranged perpendicular to the side 26 for the sake of simplicity, but the same applies to the case where the cross-sectional electrodes 22 are arranged radially.

Further, in the semiconductor device according to the present embodiment, as shown in FIG. 4, the through-hole shoulder portion 31 of the cross-sectional electrode 22 is tapered. Therefore, when the outer peripheral portion of the insulating package 21 is cut off with a mold or the like at the time of forming the cross-sectional electrode, it is possible to prevent the stress generated in the through-hole shoulder portion 31 from being dispersed and to prevent the through-hole shoulder portion 31 from cracking. It is.

FIG. 5 shows a manufacturing process of the semiconductor device shown in FIG. First, at a position to be the outer periphery of the insulating package 21, an oblong (race track-shaped) through-hole is formed radially and radially and longest at a corner portion and shortest at a center portion of each side. Copper is plated on the inner wall surface of the through hole to form a metal electrode. Then, the through hole (metal electrode) is formed along the outer periphery of the insulating package 21 with a mold or the like.
5A is cut off, and as shown in FIG. 5A, a copper cross-sectional electrode 22 is formed radially on the outer peripheral portion of the insulating package 21. Further, the electric paths 24 are formed from the respective cross-sectional electrodes 22 to the vicinity of the island portions 35.

Next, as shown in FIG. 5B, the semiconductor element 25 is die-bonded to the island portion 35 of the insulating package 21 with, for example, a paste. After that, Fig. 5 (c)
As shown in (1), wire bonding is performed on the connection terminal of the semiconductor element 25 and the electric path 24 corresponding to the connection terminal by a metal wire 36 such as a gold wire, an aluminum wire, or a copper wire. Next, as shown in FIG. 5D, the semiconductor element 25 is sealed with a resin 37 such as a pellet of a solid type resin or an epoxy liquid resin to complete the semiconductor device of the present embodiment.

Since the semiconductor device formed as described above has the cross-sectional electrode 22 on the outer peripheral portion, the semiconductor device is mounted on the motherboard by a reflow process in the same manner as a normal SMT (Surface Mount Technology) part. Implementation becomes possible. FIG. 6 is an enlarged perspective view around the cross-sectional electrode 22 when the semiconductor device according to the present embodiment is mounted on the motherboard 41. Generally, the insulating package 21 and the resin 3
The warpage of the package due to the difference in linear expansion coefficient from 7 is largest at the package corner 43 and becomes smaller toward the center of each side.

In the semiconductor device according to the present embodiment, the sectional electrode 22 has a slit function, and its length is the longest at the package corner 43 and the shortest at the center of each side. . Therefore, the warpage generated in the package corner 43 is effectively reduced by the deformation of the slit-shaped cross-sectional electrode 22. Further, since the length of the cross-sectional electrode 22 becomes longer toward the package corner 43, as shown in FIG.
2 and the connection area with the motherboard 41 via the second connector 2 also increases. From the above, the package corner portion 43 of the insulating package 21 at the time of mounting on the motherboard 41 is described.
Is corrected, and no solder connection failure occurs.

As described above, a slit-shaped cross-sectional electrode 22 is radially provided on the outer peripheral portion of the insulating package 21.
The length of the sectional electrode 22 is set to be the longest at the corner of the insulating package 21 and the shortest at the center of each of the four sides. Therefore, the warpage of the package corner portion 43 is effectively reduced by the deformation of the slit-shaped cross-sectional electrode 22 during mounting on the motherboard 41. Further, since the length of the sectional electrode 22 is long at the package corner 43, the connection area between the motherboard 41 and the sectional electrode 22 is large. As a result, it is possible to correct the warpage of the insulating package 21 at the package corner 43 and prevent a poor solder connection.

As described above, the length of the sectional electrode 22 is the longest at the corner of the insulating package 21 and the shortest at the center of each side. Therefore, the wiring area of the electric circuit 24 at the center of each side of the insulating package 21 is wide, and it is not necessary to reduce the width of the electric circuit 24. Therefore, it is possible to avoid a decrease in current density and a decrease in heat dissipation due to a decrease in the width of the electric circuit 24.

Furthermore, the through-hole shoulder portion 31 of the cross-sectional electrode 22 is tapered. Therefore, when forming the cross-sectional electrode, the insulating package 21
When the outer peripheral portion is cut off with a mold or the like, the stress generated in the through-hole shoulder portion 31 is dispersed, and no crack occurs.

Although the cross-sectional electrodes 22 are radially arranged in the above embodiment, they need not necessarily be radially arranged. For example, even if they are arranged in the vertical direction on each of the four sides, a function of alleviating the warpage at the package corner 43 is exhibited.

[0028]

As is clear from the above, in the semiconductor device according to the first aspect of the present invention, the slit-shaped cross-sectional electrodes are formed on the outer periphery of the insulating package. Of the corners can be reduced. Also, since the length of the cross-sectional electrode is the longest at the corner of the insulating package,
At the time of the mounting, the connection area of the cross-sectional electrode of the corner portion with the motherboard can be increased. As a result, it is possible to eliminate the warpage of the corner portion, and it is possible to prevent a poor solder connection due to the warpage of the insulating package.

Further, the length of the cross-sectional electrode is such that the cross-sectional electrode located at the corner of the insulating package is the longest, the cross-sectional electrode located at the center of one side is the shortest, and the length of the cross-sectional electrode is between the corner and the center. Since the cross-sectional electrodes located therebetween are sequentially shortened in the order of arrangement from the corner to the center, the wiring area of the electric path at the center can be widened. Therefore, it is not necessary to reduce the width of the electric circuit, and it is possible to avoid a decrease in current density and a decrease in heat dissipation due to the narrow electric circuit.

In the semiconductor device according to the second aspect of the present invention, the cross-sectional electrodes are radially arranged.
A connection point of the cross section electrode at the corner portion with the electric circuit is closer to the semiconductor element side. Therefore, the length of the electric path with respect to the cross-sectional electrode at the corner can be shortened.

In the semiconductor device according to the third aspect of the present invention, the cross-sectional electrodes are tapered at the edges of the openings on the upper surface and the lower surface of the insulating package. When the outer peripheral portion is cut off together with the tip of the sectional electrode by using a mold or the like, the stress generated at the edge of the sectional electrode is dispersed. Therefore, cracks do not occur at the edge portion when cutting with the mold or the like.

[Brief description of the drawings]

FIG. 1 is a plan view of a semiconductor device according to the present invention.

FIG. 2 is a perspective view of the semiconductor device shown in FIG.

FIG. 3 is an explanatory view showing that it is not necessary to reduce the width of an electric circuit when the length of a cross-sectional electrode is maximized at a corner portion.

FIG. 4 is a cross-sectional view of the cross-sectional electrode in FIG.

FIG. 5 is a view illustrating a manufacturing process of the semiconductor device illustrated in FIG. 1;

FIG. 6 is an enlarged perspective view around a cross-sectional electrode when the semiconductor device shown in FIG. 1 is mounted on a motherboard.

FIG. 7 is a plan view of a conventional semiconductor device on which a cross-sectional electrode is formed.

8 is a transverse sectional view of the sectional electrode 2 in FIG.

[Explanation of symbols]

21: insulating package, 22: sectional electrode,
Reference numeral 24: electric circuit, 25: semiconductor element, 31: through-hole shoulder, 35: island, 36: metal wire, 37: resin, 41: motherboard, 42: solder mini-skas, 43: package corner.

Claims (3)

[Claims] An insulating package; a semiconductor element mounted on the insulating package and sealed with a resin; a cross-sectional electrode formed on an outer periphery of the insulating package; In a semiconductor device having an electric path for electrically connecting a semiconductor element and a cross-sectional electrode, the cross-sectional electrode is formed in a slit shape, and a length of the cross-sectional electrode is a cross-section positioned at a corner of the insulating package. The electrode is the longest, the cross-sectional electrode located at the center of one side is the shortest, and the cross-sectional electrodes located between the corner and the center are sequentially shortened according to the arrangement order from the corner to the center. A semiconductor device characterized by the above-mentioned. 2. The semiconductor device according to claim 1, wherein the cross-sectional electrodes are arranged radially. 3. The semiconductor device according to claim 1, wherein the cross-sectional electrode has a taper at an edge portion of an opening on an upper surface and a lower surface of the insulating package.