JPH10321527A - Epitaxial growing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an epitaxial growing device having an autoloader mechanism which suppresses dust from being stuck on the surface of a semiconductor wafer when placing the semiconductor wafer on a substrate holder. SOLUTION: An autoloader mechanism is constituted by having a chuck unit part arranging a chuck head part 4 with plural collision preventing plates 30 for preventing the collision of a semiconductor wafer 13 with the sidewall of a wafer placing part 14a, when placing the semiconductor wafer 13 placed on a helical placing part 20 onto the wafer placing part 14a of a succeptor 14 at an epitacial furnace part. Thus, the manufacturing yield of semiconductor device is improved.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a semiconductor manufacturing apparatus, and more particularly, to an epitaxial growth apparatus having an autoloader mechanism for automatically mounting a semiconductor wafer on a substrate holder of a reactor having a concave wafer mounting portion. .

[0002]

2. Description of the Related Art In recent years, each manufacturing apparatus used in the manufacturing process of a semiconductor device has been increasingly automated, and an autoloader mechanism for automatically mounting a semiconductor wafer on a substrate holder of the manufacturing apparatus is provided. As one of semiconductor manufacturing apparatuses having such an autoloader mechanism, there is an epitaxial growth apparatus.

In forming an epitaxial layer on the surface of a semiconductor wafer, unless the semiconductor wafer is placed on a substrate holder of an epitaxial growth apparatus and epitaxial growth is started without removing dust on the surface of the semiconductor wafer as much as possible, the surface of the semiconductor wafer must be removed. Abnormal epitaxial growth due to dust occurs, and projections are generated on the surface of the semiconductor wafer. Even if this projection is near the periphery of the semiconductor wafer where the semiconductor device is not manufactured in the semiconductor wafer, various problems occur in each manufacturing process of the semiconductor device.
A semiconductor wafer on which an epitaxial layer has been formed, on which such projections have been formed, is subjected to defective processing. Therefore, there is a demand for an epitaxial growth apparatus that performs epitaxial growth while minimizing dust adhesion to the semiconductor wafer surface. The autoloader mechanism provided in such an epitaxial growth apparatus is constituted by a semiconductor wafer transfer system that does not contact the surface of the semiconductor wafer at all. Here, an example of an epitaxial growth apparatus having the above-described autoloader mechanism will be described with reference to FIGS.

First, as shown in FIG. 5, an epitaxial growth apparatus 1 having an autoloader mechanism has an epitaxial furnace section 2 for vapor-phase growing an epitaxial layer on a semiconductor wafer, and a concave wafer mounting section of the epitaxial furnace section 2. A chuck unit unit 3 including a chuck head unit 4 for mounting a semiconductor wafer on a substrate holder (susceptor) and a chuck transfer unit 5 for chucking the semiconductor wafer using Bernoulli's principle and transferring the semiconductor wafer. A loading unit 6 for mounting a cassette for storing semiconductor wafers, an unloading unit 7 for mounting a cassette for storing semiconductor wafers after epitaxial growth, and a control device (shown in the figure) for controlling the operation of each unit of the epitaxial growth apparatus 1. (Omitted). Chuck unit 3
Is moved by a drive unit (not shown) of the chuck unit 3 as shown by an arrow A, and the semiconductor wafer is placed on the susceptor of the epitaxial furnace 2 and the semiconductor wafer on the susceptor is taken out. .

[0005] As shown in FIG. 6, an epitaxial furnace section 2 includes a base plate section 11 and a reaction chamber 1 made of quartz.
2. A susceptor 14 on which the semiconductor wafer 13 is placed, a heating coil for inductively heating the susceptor 14 with a current from a high-frequency current source (not shown), a so-called work coil 15, a quartz cup 16 covering the work coil 15 And a reaction gas supply cylinder 17 for introducing a reaction gas for forming an epitaxial layer into the chamber section 12, a motor 18 for rotating the susceptor 14, and the like. The reaction gas introduced into the reaction chamber 12 substantially horizontally from the small hole 17a of the reaction gas supply cylinder 17 reacts on the semiconductor wafer 13 heated by the susceptor 14 to form an epitaxial layer, Gas and unreacted gas
Passing between the periphery of the susceptor 14 and the reaction chamber 12,
The air is exhausted by an exhaust system toward an exhaust hole 11a provided in the base plate portion 11.

[0006] The susceptor 14 of the epitaxial furnace section 2
It has a schematic planar structure as shown in FIG. That is, a plurality of wafer mounting portions 14a on which the semiconductor wafer 13 is mounted are provided around the susceptor 14, and the susceptor 14
A position detecting slit 14b for detecting the position of the wafer mounting portion 14a is provided in the peripheral portion. As shown in FIG. 7B, the schematic cross-sectional structure of the wafer mounting portion 14a at the KK portion is a circular concave structure having a diameter slightly larger than the diameter of the semiconductor wafer 13 on the surface of the susceptor 14. . The depth of the concave portion of the wafer mounting portion 14a is about the thickness of the semiconductor wafer, and the bottom shape of the wafer mounting portion 14a is a spherical surface having a large radius of curvature. When 13 warps downward,
The back surface of the semiconductor wafer 13 comes into close contact with this spherical surface.

The semiconductor wafer 13 is automatically mounted on the wafer mounting portion 14a of the susceptor 14,
FIG. 8A shows a schematic plan structure of the chuck head unit 4 of the wafer chuck unit unit 3 for taking out the semiconductor wafer 13 from a.
That is, the chuck head portion 4 has a structure in which, for example, four spiral mounting portions 20 of the semiconductor wafers 13 are arranged at substantially equal intervals outside the periphery of the semiconductor wafer 13. The schematic cross-sectional structure of the chuck head unit 4 along the line MM is as shown in FIG. 8B. The spiral mounting unit 20 includes a rotating shaft 22 that is rotated by a driving unit 21.
And a spiral plate 23 on the side wall of the rotating shaft 22 for moving the semiconductor wafer downward by the rotation of the rotating shaft 22. When viewed in plan, the spiral plate 23 is shown in FIG.
As shown in the figure, the semiconductor wafer 13 has a semicircular shape concentric with the rotation shaft 22, and the semiconductor wafer 13 moves downward along the inclination of the spiral plate 23 with the rotation of the rotation shaft 22, and has a circular chip. The portion falls onto the wafer mounting portion 14a of the susceptor 14 and is mounted on the wafer mounting portion 14a.

Next, the operation of the epitaxial growth apparatus 1 having the above-described autoloader mechanism will be schematically described. First, the cassette accommodating the semiconductor wafer 13 is placed on the load section 6 and the reaction chamber 1 of the epitaxial furnace section 2 is placed.
After moving 2 upward, the operation of the autoloader mechanism is started. At the start of the operation of the autoloader mechanism, the semiconductor wafer 13 in the cassette is suctioned and transported by the back-side suction type arm transfer system (not shown) between the load unit 6 and the chuck unit 3 for sucking and transferring the semiconductor wafer 13 on the back surface. ,
It is transported below the chuck head unit 4 of the chuck unit unit 3. Next, the chuck unit 3 moves downward, and the four helical mounting portions 20 rotate synchronously by the operation of the driving unit 21 of the chuck head unit 4, and the upper portion of the helical plate 23 becomes flat. The semiconductor wafer 13 is placed on the portion.

Next, the chuck unit 3 is moved by a driving device (not shown) of the chuck unit 3 as shown by an arrow A, and the susceptor 14 at a predetermined position is moved.
The chuck head unit 4 is brought directly above the wafer mounting unit 14a. After that, the driving unit 21 of the chuck head unit 4 operates to rotate the rotary shaft 22 of the spiral mounting unit 20, and the semiconductor wafer mounted on the spiral plate 23 of the spiral mounting unit 20 above the spiral plate 23. 13 is moved downward along the inclination of the spiral plate 23 and dropped from the circular chipped portion of the spiral plate 23 onto the wafer mounting portion 14 a of the susceptor 14.
4a. Next, the susceptor 14 is rotated to move the next wafer mounting portion 14a to a predetermined position. Thereafter, the operation of the autoloader mechanism described above causes the next wafer mounting portion 1a to move.
The semiconductor wafer 13 is placed on 4a. By repeating the above operation, the semiconductor wafer 13 is mounted on all the wafer mounting portions 14a of the susceptor 14.

When the mounting of the semiconductor wafer 13 on the wafer mounting portion 14a is completed, the reaction chamber 12 of the epitaxial furnace portion 2 is moved downward and is brought into close contact with the base plate portion 11. Thereafter, an epitaxial layer is formed on the surface of the semiconductor wafer 13 in the epitaxial furnace 2 by a method according to a conventional method.

After the formation of the epitaxial layer is completed, the reaction chamber 12 is moved upward, and the operation of the autoloader mechanism is started. At the start of the operation of the autoloader mechanism, the chuck unit 3 is moved by a driving device (not shown) of the chuck unit 3 as shown by an arrow A,
The chuck transfer section 5 of the chuck unit section 3 is moved directly above the wafer mounting section 14a of the susceptor 14 at a predetermined position. Thereafter, the chuck transport unit 5 moves the wafer mounting unit 14
The semiconductor wafer 13 is chucked according to Bernoulli's principle, and is then transported by Bernoulli method to transport the semiconductor wafer 13 to the end of the chuck transport unit 5 opposite to the chuck head unit 4. Thereafter, the semiconductor wafer 13 of the chuck transfer unit 5 is stored in a cassette placed on the unload unit 7 by a back-side suction type arm transfer system (not shown) between the unload unit 7 and the chuck transfer unit 5.

In the above-described epitaxial growth apparatus 1, the spiral mounting section 20 of the chuck head section 4 causes
When the semiconductor wafer 13 moves downward along the inclination of the spiral plate 23 and drops from the lower end of the spiral mounting portion 20 onto the wafer mounting portion 14a of the susceptor 14, the semiconductor wafer 13 moves in a planar direction within the wafer mounting portion 14a. The wafer 13 moves and the semiconductor wafer 1
The edged (beveled) tip of the three peripheral edges collides with the side wall of the wafer mounting portion 14a, and the wafer mounting portion 14a
The silicon film deposited on the side wall may be peeled off and scattered as particles. The scattered particles form the semiconductor wafer 13
When the particles adhere to the surface, abnormal epitaxial growth occurs in the adhered particles, as in the case of the dust adhered to the surface of the semiconductor wafer 13, and projections are generated. Therefore, as described above, even if an autoloader mechanism for mounting the semiconductor wafer 13 on the wafer mounting portion 14a without touching the surface of the semiconductor wafer 13 is used, the wafer mounting portion 14a of the semiconductor wafer 13 may be used.
The silicon film deposited on the side wall of the wafer mounting portion 14a is peeled off due to the collision with the side wall, so that dust adheres to the surface of the semiconductor wafer 13 and the manufacturing yield of the semiconductor device is reduced due to poor epitaxial layer formation. This causes a problem.

[0013]

SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems in the epitaxial growth apparatus. That is, an object of the present invention is to provide an epitaxial growth apparatus having an autoloader mechanism that suppresses dust adhering to a semiconductor wafer surface when a semiconductor wafer is placed on a substrate holder.

[0014]

SUMMARY OF THE INVENTION An epitaxial growth apparatus according to the present invention is proposed to solve the above-mentioned problem, and has a chuck head having a spiral mounting portion for mounting a semiconductor wafer. In the epitaxial growth apparatus having the configured auto-loading mechanism, when the semiconductor wafer placed on the spiral placement section is placed on the wafer placement section of the substrate holder of the epitaxial furnace section, the wafer is placed on the side of the wafer placement section. A plurality of anti-collision plates for preventing the collision of the semiconductor wafer are disposed on the chuck head.

According to the present invention, when the semiconductor wafer is dropped from the spiral mounting portion onto the wafer mounting portion of the substrate holder by the plurality of collision preventing plates provided on the chuck head portion, the wafer is placed on the wafer. It is possible to prevent collision of the semiconductor wafer in the mounting portion with the horizontal direction of the wafer mounting portion due to horizontal movement of the semiconductor wafer, and there is no scattering of particles due to peeling of the silicon film deposited on the wafer mounting portion side wall, and the semiconductor wafer surface can be prevented. No dust is generated. Therefore, the formation failure of the epitaxial layer is suppressed, and the production yield of the semiconductor device is improved.

[0016]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, specific embodiments of the present invention will be described with reference to the accompanying drawings. The same components as those in FIG. 8 referred to in the description of the prior art are denoted by the same reference numerals.

Embodiment 1 This embodiment is directed to an epitaxial growth apparatus having an autoloader mechanism for automatically mounting a semiconductor wafer on a substrate holder (susceptor) of an epitaxial furnace having a concave wafer mounting portion. This is an example to which the present invention is applied, and will be described with reference to FIGS. 5 to 8 and FIGS. First, the basic structure of the epitaxial growth apparatus 1, the epitaxial furnace unit 2 of the epitaxial growth apparatus 1, and the substrate holder of the epitaxial furnace unit 2, that is, the susceptor 14, of the present embodiment is the same as that of the conventional example shown in FIGS. Since the epitaxial growth apparatus 1, the epitaxial furnace 2 of the epitaxial growth apparatus 1, and the susceptor 14 of the epitaxial furnace 2 are almost the same, the description of the similar parts will be omitted, and the description of the characteristic parts will be described in detail.

FIG. 1A shows a schematic plan view of the chuck head section 4 of the chuck unit section 3 of the present embodiment viewed from below. That is, a plurality of, for example, four spiral mounting portions 20 are provided at substantially equal intervals along the outer circumference of the circumference corresponding to the peripheral portion of the semiconductor wafer 13 in the chuck head portion 4, At a position substantially in the center between the spiral mounting portions 20 provided on the circumference of the spiral mounting portion 20, four resin products for preventing the semiconductor wafer 13 from colliding with the side wall of the wafer mounting portion 14 a. For example, a prismatic collision prevention plate 30 made of a fluorine-based resin (Teflon) is provided.

The schematic sectional structure at the PP section of the chuck head 4 is the same as the schematic sectional structure of FIG. As shown in FIG. 1B, a schematic cross-sectional structure of the chuck head unit 4 taken along the line Q-Q includes a collision prevention plate 3 disposed on the lower surface of the chuck head unit 4.
The semiconductor wafer 13 is disposed at a slight distance from the side wall of the semiconductor wafer 13 on the side of the semiconductor wafer 13. The upper part of the collision prevention plate 30 in the shape of a prism has a thick plate shape in order to maintain mechanical strength.
Has a thin plate shape. The tip portion 30a of the thin plate-shaped collision prevention plate 30 is
When the semiconductor wafer 13 placed on the susceptor 14 is placed on the wafer placement portion 14a of the susceptor 14, the semiconductor wafer 13 is inserted between the side wall of the wafer placement portion 14a and the semiconductor wafer 13, and the wafer placement portion 14a
It will be in a state slightly above the bottom.

As described above, when the four collision prevention plates 30 are provided on the chuck head 4, the semiconductor wafer 13 mounted on the spiral mounting portion 20 is placed on the wafer mounting portion 14 a of the susceptor 14. At the time of mounting, even if the semiconductor wafer 13 moves as shown by the arrow B in FIG. 2 in the wafer mounting portion 14a, the collision preventing plate 3 does not collide with the side wall of the wafer mounting portion 14a.
The position of the side wall on the semiconductor wafer 13 side of 0 and the width W of the collision prevention plate 30 are as follows. Now, the circular wafer mounting unit 1
The distance ΔR = R ₁ −R ₂ between the side wall of the wafer mounting portion 14 a and the peripheral portion of the semiconductor wafer 13 when the center is overlapped, where R _{1 is} the radius of the semiconductor wafer 13 and R ₂ is the radius of the semiconductor wafer 13, and the wafer mounting portion 14 a Semiconductor wafer 1 of collision prevention plate 30 from side wall
Assuming that the distance L to the side wall on the third side is L, the side wall position and the width W of the collision prevention plate 30 are ΔRL−L, that is, L> ΔR / 2.
In this position, the width W of the collision prevention plate 30 may be set to about ΔR.

Next, in the operation of the chuck head unit 4 of the chuck unit unit 3 described above, when the semiconductor wafer 13 mounted on the spiral mounting unit 20 is mounted on the wafer mounting unit 14 a of the susceptor 14. The operation will be described. First, the chuck head 4 of the chuck unit 3 is mounted on the susceptor 1.
4 and directly below the wafer mounting portion 14a, and then move downward to insert the tip portion 30a of the collision prevention plate 30 into the recessed wafer mounting portion 14a. It stops just before contacting the bottom of the portion 14a. Next, the drive shaft 21 of the chuck head unit 4 drives the rotary shafts 22 of the four spiral mounting units 20 to rotate synchronously, and the flat portions on the spiral plate 23 of the spiral mounting unit 20 are rotated. The semiconductor wafer 13 placed on the helical plate 23 moves downward along the inclination of the spiral plate 23, and falls on the wafer placing portion 14 a of the susceptor 14 from a circular chipped portion at the lower end of the spiral plate 23, and Part 14a
Placed on

When the semiconductor wafer 13 falls from the lower end of the spiral plate 23 to the wafer mounting portion 14a of the susceptor 14, the semiconductor wafer 13 moves within the wafer mounting portion 14a, but hits the fluororesin collision prevention plate 30. Therefore, the semiconductor wafer 1
3 is mounted on the wafer mounting portion 14a without colliding with the side wall of the wafer mounting portion 14a.

In the epitaxial growth apparatus 1 having the above-described autoloader mechanism, the chuck unit 3
Since the plurality of collision prevention plates 30 are disposed on the chuck head unit 4, the semiconductor wafer 13 can be moved to the chuck head unit 4.
When the semiconductor wafer 13 in the wafer mounting portion 14a is horizontally moved from the spiral mounting portion 20 to the wafer mounting portion 14a of the susceptor 14, the wafer mounting portion 14a
The collision with the side wall can be prevented, and the wafer mounting portion 14 can be prevented.
There is no scattering of particles due to the peeling of the silicon film deposited on the side wall a, and no dust adheres to the surface of the semiconductor wafer 13. Therefore, it is possible to suppress a decrease in the manufacturing yield of the semiconductor device due to the poor formation of the epitaxial film.

Embodiment 2 This embodiment is directed to an epitaxial growth apparatus having an autoloader mechanism for automatically mounting a semiconductor wafer on a substrate holder (susceptor) of an epitaxial furnace having a concave wafer mounting portion. FIG. 5, FIG. 6, and FIG. 8, and FIG. 3 and FIG.
This will be described with reference to FIGS. First, the basic structure of the epitaxial growth apparatus 1 of the present embodiment, the epitaxial furnace 2 of the epitaxial growth apparatus 1 and the substrate holder, that is, the susceptor 14 of the epitaxial furnace 2 is the conventional epitaxial growth apparatus 1 shown in FIGS. Since it is substantially the same as the epitaxial furnace unit 2 of the epitaxial growth apparatus 1, the description of the same parts will be omitted, and the description of the characteristic parts will be described in detail.

The susceptor 40 of the epitaxial furnace section 2 of the present embodiment has a schematic plan structure as shown in FIG. That is, a plurality of concave wafer mounting portions 4 on which the semiconductor wafer 13 is mounted are provided around the susceptor 40.
A position detection slit 42 for detecting the position of the wafer mounting portion 41 is provided in the peripheral portion of the susceptor 40. Around the wafer mounting portion 41 having a circular planar shape, a plurality of, for example, four grooves 43 into which a tip portion of a collision prevention plate 50 described later is inserted are provided. The schematic cross-sectional structure at the RR section of the wafer mounting section 41 described above is as follows.
As shown in FIG. 3B, a circular concave structure having a diameter slightly larger than the diameter of the semiconductor wafer 13 is formed on the surface of the susceptor 40, and the depth of the concave portion is about the thickness of the semiconductor wafer 13. The bottom position of the groove 43 provided around the wafer placement unit 41 is substantially the same as the bottom position of the wafer placement unit 41. The bottom shape of the wafer mounting portion 41 is a spherical surface having a large radius of curvature. When the semiconductor wafer 13 is warped downward at a high temperature at the time of forming the epitaxial layer, the back surface of the semiconductor wafer 13 closely contacts the spherical surface. become.

A schematic plan structure of the chuck head unit 4 of the chuck unit unit 3 according to this embodiment viewed from below is as follows.
The structure is as shown in FIG. That is, a plurality of, for example, four spiral mounting portions 20 are provided at substantially equal intervals along the outer circumference than the circumference corresponding to the peripheral portion of the semiconductor wafer 13 in the chuck head portion 4. The wafer mounting portion 41 of the susceptor 40 is located at a substantially central position between the spiral mounting portions 20 on the circumference where the spiral mounting portions 20 are provided.
Four collision-prevention plates 50 made of resin, for example, a fluororesin (Teflon), which prevent collision of the semiconductor wafer 13 with the side wall, are provided.

The schematic cross-sectional structure of the chuck head portion 4 at the SS section is the same as the schematic cross-sectional structure of FIG. As shown in FIG. 4 (b), the schematic cross-sectional structure of the chuck head 4 at the TT portion is the same as the side wall on the semiconductor wafer 13 side of the prismatic collision prevention plate 50 provided on the lower surface of the chuck head 4. The semiconductor wafer 13 is arranged at a slight distance from the peripheral portion. The tip of the collision prevention plate 50 is inserted into the groove 43 of the wafer mounting portion 41 when the semiconductor wafer 13 mounted on the spiral mounting portion 20 is mounted on the wafer mounting portion 41 of the susceptor 40. Becomes

To prevent the semiconductor wafer 13 from colliding with the side wall of the wafer mounting portion 41, the position of the side wall of the collision prevention plate 50 on the semiconductor wafer 13 side and the width of the collision prevention plate 30 are the same as those described in the first embodiment. Decide based on relationships.

In the operation of the chuck head section 4 of the chuck unit section 3 described above, the semiconductor wafer 13 mounted on the spiral mounting section 20 is moved to the wafer mounting section 4 of the susceptor 40.
The operation at the time of mounting on the device 1 is the same as that described in the first embodiment, and a description thereof is omitted.

In the epitaxial growth apparatus 1 having the above-described autoloader mechanism, the chuck unit 3
Since the plurality of collision prevention plates 50 are disposed on the chuck head unit 4, the semiconductor wafer 13 can be moved to the chuck head unit 4.
When the semiconductor wafer 13 in the wafer mounting part 41 is horizontally moved from the spiral mounting part 20 to the wafer mounting part 41 of the susceptor 40, collision with the side wall of the wafer mounting part 41 is prevented. Can be prevented, and there is no scattering of particles due to peeling of the silicon film deposited on the side wall of the wafer mounting portion 41.
No dust adheres to the surface of the semiconductor wafer 13. Therefore, it is possible to suppress a decrease in the manufacturing yield of the semiconductor device due to the poor formation of the epitaxial film.

Although the present invention has been described with reference to the two embodiments, the present invention is not limited to these embodiments. For example, in the embodiment of the present invention, the collision prevention plate provided on the chuck head is described as being made of a fluorine resin, but may be made of another resin such as a polyimide resin. In the embodiment of the present invention, four anticollision plates are provided on the chuck head. However, the collision of the anticollision plate on the semiconductor wafer side so that the semiconductor wafer does not collide with the side wall of the wafer mounting portion. As long as the position of the side wall of the prevention plate and the width of the collision prevention plate are set, three collision prevention plates may be used.

[0032]

As is apparent from the above description, the epitaxial growth apparatus having the autoloader mechanism according to the present invention has a structure in which the collision prevention plate is provided on the chuck head and the semiconductor wafer is spirally mounted on the chuck head. When the wafer is placed on the wafer mounting portion of the susceptor, it is possible to prevent the semiconductor wafer in the wafer mounting portion from colliding with the side wall of the wafer mounting portion due to the horizontal movement of the semiconductor wafer. There is no scattering of particles due to peeling of the deposited silicon film, and no dust attached to the surface of the semiconductor wafer.
Therefore, the formation failure of the epitaxial layer is suppressed, and the production yield of the semiconductor device is improved.

[Brief description of the drawings]

FIGS. 1A and 1B are schematic views of a chuck head unit according to a first embodiment of the present invention, in which FIG. 1A is a schematic plan view of the chuck head unit viewed from below, and FIG. It is a schematic sectional drawing in Q part.

FIG. 2 is a side view of the collision prevention plate provided on the chuck head portion of the first embodiment of the present invention, the side wall position of the collision prevention plate on the semiconductor wafer side, the collision prevention plate width, the wafer mounting portion of the susceptor, and the semiconductor wafer. FIG. 4 is a diagram for explaining a relationship with the size of the image.

3A and 3B are schematic diagrams of a susceptor according to a second embodiment of the present invention, in which FIG. 3A is a schematic plan view, and FIG.
It is an outline sectional view in an R section.

4A and 4B are schematic views of a chuck head unit according to a second embodiment of the present invention, wherein FIG. 4A is a schematic plan view of the chuck head unit viewed from below, and FIG. It is a schematic sectional drawing in T part.

FIG. 5 is a schematic block diagram of a conventional epitaxial growth apparatus.

FIG. 6 is a schematic sectional view of an epitaxial furnace section of a conventional epitaxial growth apparatus.

7A and 7B are schematic views of a susceptor of a conventional epitaxial furnace, where FIG. 7A is a schematic plan view, and FIG.
It is a schematic sectional drawing in the K section.

8A and 8B are schematic views of a conventional chuck head, and FIG. 8A is a schematic plan view of the chuck head viewed from below, and FIG.
FIG. 9 is a schematic cross-sectional view taken along the line MM in FIG.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 ... Epitaxial growth apparatus, 2 ... Epitaxial furnace part, 3 ... Chuck unit part, 4 ... Chuck head part,
Reference numeral 5: chuck transport section, 6: loading section, 7: unload section, 11: base plate section, 11a: exhaust hole, 12:
Reaction chamber, 13: semiconductor wafer, 14, 40: susceptor, 14a, 41: wafer mounting part, 14b, 42: position detection slit, 15: work coil, 16: cup,
17 ... reaction gas supply cylinder, 18 ... motor, 20 ... helical mounting part, 21 ... drive part, 22 ... rotary shaft, 23 ... helical plate,
30, 50: anti-collision plate, 30a: tip, 43: groove

Claims (4)

[Claims] 1. An epitaxial growth apparatus having an auto-load mechanism including a chuck head having a spiral mounting portion for mounting a semiconductor wafer, wherein the semiconductor mounted on the spiral mounting portion is provided. A plurality of anti-collision plates for preventing collision of the semiconductor wafer against the side wall of the wafer mounting portion when the wafer is mounted on the wafer mounting portion of the substrate holder of the epitaxial furnace portion are provided in the chuck head portion. An epitaxial growth apparatus characterized in that: 2. The epitaxial growth apparatus according to claim 1, wherein a material of the collision prevention plate is a resin. 3. A groove into which the collision prevention plate is inserted is provided at a position on a peripheral edge portion of a wafer mounting portion of the substrate holder corresponding to a position of the plurality of collision prevention plates provided on the chuck head portion. The epitaxial growth apparatus according to claim 1, wherein: 4. The epitaxial growth apparatus according to claim 2, wherein said resin is a fluorine-based resin.