JPH06345262A - Processing device - Google Patents

Processing device

Info

Publication number
JPH06345262A
JPH06345262A JP16377193A JP16377193A JPH06345262A JP H06345262 A JPH06345262 A JP H06345262A JP 16377193 A JP16377193 A JP 16377193A JP 16377193 A JP16377193 A JP 16377193A JP H06345262 A JPH06345262 A JP H06345262A
Authority
JP
Japan
Prior art keywords
processed
wafer
arm
processing
residue
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16377193A
Other languages
Japanese (ja)
Other versions
JP2920454B2 (en
Inventor
Kenji Yasuda
賢司 安田
Hiroyuki Sanada
博幸 真田
Teru Sugabayashi
輝 管林
Masaaki Murakami
政明 村上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Tokyo Electron Kyushu Ltd
Original Assignee
Tokyo Electron Ltd
Tokyo Electron Kyushu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, Tokyo Electron Kyushu Ltd filed Critical Tokyo Electron Ltd
Priority to JP5163771A priority Critical patent/JP2920454B2/en
Publication of JPH06345262A publication Critical patent/JPH06345262A/en
Application granted granted Critical
Publication of JP2920454B2 publication Critical patent/JP2920454B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Manipulator (AREA)

Abstract

PURPOSE:To smoothly deliver an object to be processed to a processing mechanism by eliminating inconvenience that the object to be processed is hardly separated from an arm due to the residue of processing liquid. CONSTITUTION:A plurality of projecting adsorption parts 14 which are contacted with the underside in the vicinity of the circumferential edge of an object to be processed are provided on an arm 8. Outside the adsorption parts 14, a residue receiving groove 12 for receiving the residue of processing liquid supplied to the object to be processed is formed. The object to be processed can be supported in the condition of not contacting its circumferential edge with the arm 8, and the residue falling down from the circumferential edge part of the object to be processed can be received in the residue receiving groove 12.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】この発明は、例えば半導体ウエハ
等の被処理体にレジスト膜形成や現像処理などの処理を
施す処理装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a processing apparatus for performing processing such as resist film formation and development processing on an object to be processed such as a semiconductor wafer.

【0002】[0002]

【従来の技術】一般に、半導体デバイスの製造工程にお
いては、半導体ウエハにフォトレジストを塗布し、フォ
トリソグラフィ技術を用いて回路パターンを縮小してフ
ォトレジストに転写し、これを現像処理する一連の処理
が施される。
2. Description of the Related Art Generally, in a semiconductor device manufacturing process, a series of processes in which a semiconductor wafer is coated with a photoresist, a circuit pattern is reduced using a photolithography technique, transferred to the photoresist, and developed. Is applied.

【0003】このような処理を行う場合、図14に示す
処理システムが使用されている。この処理システムは、
被処理体としての半導体ウエハ(以下、単にウエハとい
う)Wを搬入・搬出するローダ部40と、ウエハWをブ
ラシ洗浄するブラシ洗浄装置42と、ウエハWを高圧ジ
ェット水で洗浄するジェット水洗浄装置44と、ウエハ
Wの表面を疎水化処理するアドヒージョン処理装置46
と、ウエハWを所定温度に冷却する冷却処理装置48
と、ウエハWの表面にレジストを塗布及びサイドリンス
処理により周縁部のレジストを溶解除去するレジスト塗
布装置50と、レジスト塗布の後でウエハWを加熱して
プリベーク又はポストベークを行う加熱処理装置52及
び露光されたウエハWの現像処理を行うための現像装置
54などを集合化して作業効率の向上を図っている。
When performing such processing, the processing system shown in FIG. 14 is used. This processing system
A loader unit 40 for loading and unloading a semiconductor wafer (hereinafter, simply referred to as a wafer) W as an object to be processed, a brush cleaning device 42 for cleaning the wafer W with a brush, and a jet water cleaning device for cleaning the wafer W with high-pressure jet water. 44 and an adhesion processing device 46 for hydrophobicizing the surface of the wafer W
And a cooling processing device 48 for cooling the wafer W to a predetermined temperature.
And a resist coating device 50 for coating the resist on the surface of the wafer W and side-rinsing to dissolve and remove the resist in the peripheral portion, and a heating device 52 for heating the wafer W after the resist coating to perform pre-baking or post-baking. Further, the developing device 54 and the like for performing the developing process of the exposed wafer W are integrated to improve the working efficiency.

【0004】上記のように構成される処理システムの中
央部には、長手方向に沿ってウエハ搬送路56が設けら
れ、このウエハ搬送路56に各装置40〜54が正面を
向けて配置され、各装置40〜54との間でウエハWの
受け渡しを行うウエハ搬送機構58がウエハ搬送路56
に沿って移動自在に設けられている。このウエハ搬送機
構58は、真空吸着あるいは周辺部の下面支持などによ
ってウエハWを保持するためのアーム59を備えてい
る。アーム59は上下に例えば2本配設されており、移
動機構によりそれぞれ独立に各装置40〜54のウエハ
載置位置まで移動できるようになっている。各アーム5
9は、図15に示すように、ウエハ支持枠60が一部切
欠環状に形成されており、その支持枠60の内側3か所
に、ウエハWの周縁部に係合してこれを載置状に支持す
る爪61が設けられている。これらの爪61は、図16
に示すように、その内側部の傾斜面61a上にウエハW
を落とし込ませることで、搬送中のウエハWのずれを防
止している。このようなアーム59を2本使用すること
で、各装置40〜54に対するウエハWの搬入・搬出を
並行して行うことができ、処理能率の向上が図れる。そ
して、例えば、ローダ部40の図示省略のウエハカセッ
ト内に収納されている処理前のウエハWを1枚取り出し
て搬送し、順に、洗浄、アドヒージョン処理、冷却、レ
ジスト塗布、プリベーク、図示省略の露光装置による露
光、現像、ポストベークを行い、処理後のウエハWをロ
ーダ部40の図示省略のウエハカセット内に搬送して収
納する。
A wafer transfer path 56 is provided along the longitudinal direction in the central portion of the processing system configured as described above, and the devices 40 to 54 are arranged on the wafer transfer path 56 with their front faces facing each other. The wafer transfer mechanism 58, which transfers the wafer W to and from each of the devices 40 to 54, has a wafer transfer path 56.
It is provided so as to be movable along. The wafer transfer mechanism 58 includes an arm 59 for holding the wafer W by vacuum suction or supporting the lower surface of the peripheral portion. For example, two arms 59 are arranged above and below, and can be independently moved to the wafer mounting positions of the respective devices 40 to 54 by a moving mechanism. Each arm 5
As shown in FIG. 15, a wafer support frame 60 is formed in a partially cut-out annular shape, and the wafer support frame 60 is mounted at three inner sides of the support frame 60 by engaging with the peripheral edge of the wafer W. A claw 61 that supports the shape is provided. These claws 61 are shown in FIG.
As shown in FIG.
The wafer W is prevented from being displaced during the transfer by dropping the wafer. By using two such arms 59, the loading and unloading of the wafer W can be performed in parallel with respect to the respective devices 40 to 54, and the processing efficiency can be improved. Then, for example, one unprocessed wafer W stored in a wafer cassette (not shown) of the loader unit 40 is taken out and conveyed, and cleaning, adhesion processing, cooling, resist coating, prebaking, and exposure (not shown) are sequentially performed. Exposure, development, and post-baking are performed by the apparatus, and the processed wafer W is transferred and stored in a wafer cassette (not shown) of the loader unit 40.

【0005】[0005]

【発明が解決しようとする課題】ところで、上述した装
置において、通常使用されるような粘性の低いレジスト
液に代え、ポリイミドのような高粘度の処理液を使用し
て塗布処理を行った場合、レジスト塗布装置50でサイ
ドリンス処理を行ってもウエハ周縁のポリイミドは除去
されにくく残ることになる。この処理液の残滓64がア
ーム59の爪61に付着すると、ウエハWがアーム59
に付いて離れにくくなり、各装置40〜54へのウエハ
Wの搬入が円滑に成し得なくなる。特に、上記加熱処理
装置52は積層された各ブロック52A内に設けた熱板
62上にウエハWを載置して加熱処理するものである
が、この熱板62へのウエハWの受け渡しは、図17に
示すように、熱板62を貫通して昇降自在に設けられた
3本の支持ピン63によって熱板62の上方で行われる
ため、アーム59の爪61に処理液の残滓64が付着し
ていると、ウエハWを支持ピン63に載置する際ウエハ
Wがずれたり落下したりする問題が生じる。また、ウエ
ハWの周縁に付着残存するポリイミドが剥がれてパーテ
ィクルとしてウエハWに付着してしまうなどの問題も生
じる。
By the way, in the above-mentioned apparatus, when the coating treatment is performed by using a high-viscosity treatment liquid such as polyimide, instead of the low-viscosity resist liquid which is usually used, Even if the side rinsing process is performed by the resist coating apparatus 50, the polyimide on the peripheral edge of the wafer is difficult to remove and remains. When the processing liquid residue 64 adheres to the claws 61 of the arm 59, the wafer W is transferred to the arm 59.
It becomes difficult to separate the wafers W from each other, and the wafer W cannot be carried into the respective devices 40 to 54 smoothly. In particular, the heat treatment apparatus 52 is for placing the wafer W on the heat plate 62 provided in each of the stacked blocks 52A to perform the heat treatment, and the transfer of the wafer W to the heat plate 62 is As shown in FIG. 17, since it is performed above the heat plate 62 by the three support pins 63 that are provided so as to vertically move through the heat plate 62, the processing liquid residue 64 is attached to the claw 61 of the arm 59. Then, when the wafer W is placed on the support pins 63, the wafer W may be displaced or dropped. There is also a problem that the polyimide remaining on the periphery of the wafer W is peeled off and adheres to the wafer W as particles.

【0006】この発明は上記事情に鑑みなされたもの
で、その目的は、ポリイミドのような高粘度の処理液を
使用して処理を行う場合でも、処理液の残滓によって被
処理体がアームから離れにくくなるような不都合が生じ
ず、各処理機構への被処理体の受け渡しを円滑に行って
効率よく一連の処理ができる処理装置を提供することに
ある。
The present invention has been made in view of the above circumstances, and an object thereof is that even when a treatment is performed using a high-viscosity treatment liquid such as polyimide, the object to be treated is separated from the arm by the residue of the treatment liquid. It is an object of the present invention to provide a processing apparatus that can smoothly transfer an object to be processed to each processing mechanism and efficiently perform a series of processing without causing inconvenience.

【0007】[0007]

【課題を解決するための手段】上記目的を達成するため
に、この発明の第1の処理装置は、被処理体に処理を施
す複数の処理機構と、これらの処理機構に上記被処理体
を搬送するための搬送機構と、この搬送機構に移動自在
に設けられ上記被処理体を保持するアームとを有する処
理装置を前提とし、上記アームに上記被処理体の周縁近
傍の下面に当接してこれを数点支持する複数の突起状吸
着部を設けると共に、これら吸着部の外側に、上記被処
理体に供給された処理液等の残滓を受けるための滓受溝
を形成してなるものである。
In order to achieve the above object, the first processing apparatus of the present invention has a plurality of processing mechanisms for performing processing on an object to be processed, and these processing mechanisms including the object to be processed. Assuming a processing device having a transport mechanism for transporting and an arm movably provided on the transport mechanism for holding the object to be processed, the arm is brought into contact with the lower surface near the peripheral edge of the object to be processed. A plurality of projecting suction portions for supporting this are provided, and a slag receiving groove for receiving a residue such as a treatment liquid supplied to the object to be treated is formed outside the suction portions. is there.

【0008】また、この発明の第2の処理装置は、被処
理体に処理を施す複数の処理機構と、これらの処理機構
に上記被処理体を搬送するための搬送機構と、この搬送
機構に移動自在に設けられ上記被処理体を保持するアー
ムとを有する処理装置を前提とし、上記アームに上記被
処理体の周方向数箇所を支承するための複数の爪を設け
ると共に、各爪の上面に、上記被処理体の周縁近傍の下
面に当接してこれを数点支持する突起状吸着部を数種類
の被処理体の径寸法に対応させて数箇所に設けてなるも
のである。
Further, the second processing apparatus of the present invention includes a plurality of processing mechanisms for processing the object to be processed, a transfer mechanism for transferring the object to be processed to these processing mechanisms, and the transfer mechanism. Assuming a processing device having a movable arm for holding the object to be processed, the arm is provided with a plurality of claws for supporting several points in the circumferential direction of the object to be processed, and the upper surface of each claw. In addition, a plurality of projecting suction portions that abut on the lower surface near the peripheral edge of the object to be processed and support the same at several points are provided at several locations corresponding to the diameters of several kinds of objects to be processed.

【0009】上記第2の発明において、上記突起状吸着
部の被処理体の径寸法に対応させた動作は手動によって
行うものであっても差し支えないが、好ましくは、各突
起状吸着部に被処理体の径寸法を検出する検出手段を設
け、この検出手段からの信号に基いて上記被処理体を支
持する部位の上記突起状吸着部を作動させる方がよい。
この場合、検出手段として、例えば真空度センサや光電
式センサ等を使用することができる。
In the second aspect of the invention, the operation of the projecting suction portions corresponding to the diameter of the object to be processed may be performed manually, but it is preferable that each projecting suction portion be covered. It is better to provide a detecting means for detecting the diameter of the object to be treated, and to operate the projecting suction portion of the portion supporting the object to be treated based on a signal from the detecting means.
In this case, for example, a vacuum sensor or a photoelectric sensor can be used as the detecting means.

【0010】[0010]

【作用】上記のように構成されるこの発明の第1の処理
装置によれば、被処理体を保持するアームに被処理体の
周縁近傍の下面に当接してこれを数点支持する複数の突
起状吸着部を設けることにより、被処理体はその周縁が
アームに対して非接触の状態で保持されるので、処理液
の残滓によって被処理体がアームから離れにくくなるよ
うな不都合は生じない。しかも、被処理体の周縁近傍を
支持する吸着部の外側に、被処理体に供給された処理液
等の残滓を受けるための滓受溝を形成することにより、
ウエハの周縁部からポリイミドの残滓が落下しても、そ
れを滓受溝で受けることができるので、残滓が装置内に
飛散するのを防止し、パーティクルの飛散を抑えること
ができる。
According to the first processing apparatus of the present invention configured as described above, a plurality of arms for holding the object to be processed are brought into contact with the lower surface near the peripheral edge of the object to be processed to support the same at several points. By providing the projecting suction portion, the object to be processed is held in a state in which the peripheral edge thereof is not in contact with the arm, so that there is no inconvenience that the object to be processed becomes difficult to separate from the arm due to the residue of the processing liquid. . Moreover, by forming a slag receiving groove for receiving a residue such as the processing liquid supplied to the object to be processed, on the outside of the adsorption portion that supports the vicinity of the peripheral edge of the object to be processed,
Even if the residue of polyimide falls from the peripheral edge of the wafer, it can be received by the residue receiving groove, so that the residue can be prevented from scattering in the apparatus, and the scattering of particles can be suppressed.

【0011】また、この発明の第2の処理装置によれ
ば、被処理体を保持するアームに被処理体の周方向数箇
所を支承するための複数の爪を設けると共に、各爪の上
面に、被処理体の周縁近傍の下面に当接してこれを数点
支持する突起状吸着部を数種類の被処理体の径寸法に対
応させて数箇所に設けることにより、被処理体をその周
縁がアームに対して非接触の状態で保持し、しかも、径
寸法の異なる数種類の被処理体に対して、アームを交換
することなく対応できる。
According to the second processing apparatus of the present invention, the arm for holding the object to be processed is provided with a plurality of claws for supporting several points in the circumferential direction of the object to be processed, and the upper surface of each claw is provided. By providing a plurality of projecting suction portions that abut on the lower surface near the peripheral edge of the object to be processed and support the same at several points in correspondence with the diameters of several kinds of objects to be processed, It is possible to hold the arm in a non-contact state and to handle several kinds of objects having different diameters without exchanging the arm.

【0012】[0012]

【実施例】以下に、この発明の実施例を図面を用いて詳
細に説明する。なお、この発明の処理装置の全体の装置
構成は、図14に示した半導体ウエハの塗布現像装置と
同様とすることができるので、ここでは、この発明の処
理装置の最も特徴的な構成要素である被処理体の搬送機
構について説明する。
Embodiments of the present invention will be described in detail below with reference to the drawings. The overall apparatus configuration of the processing apparatus of the present invention can be the same as that of the semiconductor wafer coating / developing apparatus shown in FIG. 14. Therefore, the most characteristic constituent elements of the processing apparatus of the present invention will be described here. A transport mechanism for a certain object will be described.

【0013】◎第一実施例 図1はこの発明の第一実施例の搬送機構のアーム部を示
す斜視図、図2は搬送機構の概略正面図が示されてい
る。
First Embodiment FIG. 1 is a perspective view showing an arm portion of a carrying mechanism according to the first embodiment of the present invention, and FIG. 2 is a schematic front view of the carrying mechanism.

【0014】この搬送機構57は、搬送路56(図14
参照)上の搬送レ−ル1に沿って移動自在に設けられた
走行ブロック2と、走行ブロック2に支軸3,4,5を
介してそれぞれ上下に位置をずらして設けられた3本の
アーム6,7,8を備えている。以下、上位のアーム6
を第1のアーム、中位のアーム7を第2のアーム、下位
のアーム8を第3のアームと称する。
The transfer mechanism 57 includes a transfer path 56 (see FIG. 14).
(See) a traveling block 2 provided movably along the upper transport rail 1, and three traveling blocks 2 provided on the traveling block 2 with their positions vertically displaced via support shafts 3, 4, and 5, respectively. It has arms 6, 7 and 8. Below, upper arm 6
Is referred to as a first arm, the middle arm 7 is referred to as a second arm, and the lower arm 8 is referred to as a third arm.

【0015】第1及び第2のアーム6,7は、通常のレ
ジスト塗布現像処理を行う際に各装置40〜54との間
でウエハWの受け渡しを行う図15と同様に構成された
一般用のアームであり、第3のアーム8は、この発明の
処理装置において新規に採用されたアームで、ポリイミ
ドのような高粘度の処理液の塗布処理を行う場合にのみ
使用され、特に、レジスト塗布装置50から加熱処理装
置52へウエハWを搬送するための専用のアームであ
る。これら第1〜第3のアーム6〜8は、図示省略の移
動機構により、それぞれ独立に移動可能で、水平方向
(X,Y方向)、垂直方向(Z方向)及び回転方向(θ
方向)に移動させることができるようになっている。こ
のようなアームの移動機構としては、例えば、ステッピ
ングモータ及びこれに連結されたボールスクリュー等の
回転機構、あるいはベルト駆動されるスライド機構を用
いる。
The first and second arms 6 and 7 are of the same general structure as those shown in FIG. 15 for transferring the wafer W to and from the respective devices 40 to 54 during the normal resist coating and developing process. The third arm 8 is an arm that is newly adopted in the processing apparatus of the present invention, and is used only when performing a coating process of a highly viscous processing liquid such as polyimide. It is a dedicated arm for transferring the wafer W from the apparatus 50 to the heat treatment apparatus 52. These first to third arms 6 to 8 can be independently moved by a moving mechanism (not shown), and the horizontal direction (X and Y directions), the vertical direction (Z direction) and the rotation direction (?
Direction) can be moved. As such an arm moving mechanism, for example, a rotating mechanism such as a stepping motor and a ball screw connected thereto, or a belt-driven slide mechanism is used.

【0016】第3のアーム8は、図3,図4及び図5に
示すように、ウエハ支持枠9の内側壁9aに沿ってウエ
ハ受部10が形成され、そのウエハ受部10の内周縁部
に縁取状に段部11が形成されており、これら内側壁9
aとウエハ受部10とその段部11とによって、ウエハ
支持枠9の内側部に一部切欠円環状の滓受溝12が形成
されている。この滓受溝12の両端には、図4に示すよ
うに塞ぎ壁13が形成されている。
As shown in FIGS. 3, 4 and 5, the third arm 8 has a wafer receiving portion 10 formed along the inner side wall 9a of the wafer supporting frame 9, and the inner peripheral edge of the wafer receiving portion 10 is formed. A stepped portion 11 is formed in a rim shape on the inner portion of the inner wall 9
A partially cut-out annular slag receiving groove 12 is formed on the inner side of the wafer support frame 9 by a, the wafer receiving portion 10 and the step portion 11. As shown in FIG. 4, closing walls 13 are formed at both ends of the slag receiving groove 12.

【0017】ウエハ受部10の段部11の上面には、そ
の両端部及び中間部の計3箇所に、突起状のウエハ吸着
部14が形成されている。これら吸着部14には、周方
向に沿う長穴状の吸着口15がそれぞれ形成されてお
り、これらの吸着口15は、アーム内部に形成された空
気通路16によってアーム基端部8aの吸気口17に連
通している。この吸気口17は、支軸5の内部に形成さ
れた空気通路18を介して図示省略の真空吸引装置に接
続されており、この真空吸引装置を駆動することによ
り、3つの吸着口15から同時に吸気が行われるように
なっている。これらの吸着口15が形成された段部11
の外径はウエハWの径よりも若干、例えば2〜10mm程
度小さく設定されており、突起状のウエハ吸着部14が
ウエハWの周縁近傍の下面に当接してこれを吸着保持で
きるようになっている。
On the upper surface of the stepped portion 11 of the wafer receiving portion 10, projection-shaped wafer suction portions 14 are formed at both ends and an intermediate portion in total. Each of the suction portions 14 has a suction hole 15 in the shape of an elongated hole along the circumferential direction, and these suction holes 15 are formed by an air passage 16 formed inside the arm. It communicates with 17. The intake port 17 is connected to a vacuum suction device (not shown) via an air passage 18 formed inside the support shaft 5, and by driving this vacuum suction device, the three suction ports 15 simultaneously operate. Intake is performed. Stepped portion 11 in which these suction ports 15 are formed
The outer diameter of the wafer W is set to be slightly smaller than the diameter of the wafer W, for example, about 2 to 10 mm, and the projecting wafer suction portion 14 is brought into contact with the lower surface in the vicinity of the peripheral edge of the wafer W to suck and hold it. ing.

【0018】また、ウエハ受部10の内側壁9aの径は
ウエハWの径よりも若干、例えば2〜10mm程度大きく
設定されており、吸着部14によって吸着保持したウエ
ハWの周縁部が接触しないようになっている。すなわ
ち、この第3のアーム8は、その3箇所に設けたウエハ
吸着部14によってウエハWの周縁近傍の下面3箇所を
吸着して3点支持し、図5に示すように、ウエハWの周
縁部Wa を滓受溝12の上方に迫出させた状態でウエハ
Wを保持できるようになっている。
Further, the diameter of the inner wall 9a of the wafer receiving portion 10 is set to be slightly larger than the diameter of the wafer W, for example, about 2 to 10 mm, and the peripheral portion of the wafer W sucked and held by the suction portion 14 does not contact. It is like this. That is, the third arm 8 adsorbs three points on the lower surface near the peripheral edge of the wafer W by the wafer adsorption portions 14 provided at the three points and supports them at three points, and as shown in FIG. The wafer W can be held in a state in which the portion Wa is pushed out above the slag receiving groove 12.

【0019】次に、上記のように構成された搬送機構の
動作について説明する。まず、通常のレジスト塗布現像
処理を行う場合、第1及び第2の2本のアーム6,7を
使用して、各装置40〜54に対するウエハWの搬入・
搬出を並行して行う。これにより、能率良く処理を行う
ことができる。
Next, the operation of the transport mechanism constructed as described above will be described. First, when performing a normal resist coating / developing process, using the first and second two arms 6 and 7, the loading / unloading of the wafer W into / from each of the devices 40 to 54 is performed.
Carry out in parallel. This allows efficient processing.

【0020】次に、ポリイミドのような高粘度の処理液
の塗布処理を行う場合、この場合も大部分の搬送行程は
第1及び第2の2本のアーム6,7を使用して行うが、
特に、アームの爪61に対する処理液の残滓64の付着
が問題となる搬送工程、すなわち塗布装置50でポリイ
ミドを塗布したウエハWを加熱処理装置52の支持ピン
63へ受け渡す搬送行程だけは第3のアーム8によって
行う。その際、搬送機構57は、まず走行ブロック2を
塗布装置50の前に移動させ、第3のアーム8のみを駆
動して塗布装置50内に挿入する。
Next, when a high-viscosity processing liquid such as polyimide is applied, most of the transfer process is performed using the first and second arms 6 and 7 also in this case. ,
In particular, the transfer step in which the residue 64 of the processing liquid adheres to the arm claw 61 is a problem, that is, only the transfer step of transferring the wafer W coated with the polyimide by the coating device 50 to the support pins 63 of the heat processing device 52 is the third step. Arm 8 of. At that time, the transport mechanism 57 first moves the traveling block 2 to the front of the coating device 50 and drives only the third arm 8 to insert the traveling block 2 into the coating device 50.

【0021】塗布装置50内では、例えば、レジスト液
が膜状にスピンコーティングされたウエハWが昇降自在
に設けられた図示省略のウエハW回転用のスピンチャッ
クによってウエハWが持ち上げられて受け渡し状態で待
機しており、第3のアーム8が塗布装置50内の定位置
まで挿入された後、図示省略のスピンチャックが下降あ
るいは第3のアーム8が上昇して第3のアーム8のウエ
ハ受部10にウエハWが受け渡される。これによって第
3のアーム8の3つの吸着部14がウエハWの周縁近傍
の下面3箇所に当接してウエハWを吸着保持する。
In the coating device 50, for example, the wafer W is lifted by a spin chuck for rotating the wafer W (not shown) provided with a wafer W spin-coated with a resist solution in a film shape so as to be lifted up and down. After waiting, the third arm 8 is inserted to a fixed position in the coating apparatus 50, and then a spin chuck (not shown) is lowered or the third arm 8 is raised to move the wafer receiving portion of the third arm 8. The wafer W is transferred to 10. As a result, the three suction portions 14 of the third arm 8 come into contact with the three lower surfaces of the wafer W in the vicinity of the peripheral edge thereof to suck and hold the wafer W.

【0022】次いで、搬送機構57は、第3のアーム8
を塗布装置50内から走行ブロック2上の定位置に移動
させ、中継機構56Aを経由してウエハWを他方のウエ
ハ搬送機構58に渡し、走行ブロック2を加熱処理装置
52の前に移動させた後、第3のアーム8を加熱処理装
置52内に挿入し、真空吸引装置の駆動を停止する。
Next, the transport mechanism 57 is provided with the third arm 8
Was moved from the coating device 50 to a fixed position on the traveling block 2, the wafer W was transferred to the other wafer transfer mechanism 58 via the relay mechanism 56A, and the traveling block 2 was moved in front of the heat treatment device 52. After that, the third arm 8 is inserted into the heat treatment device 52, and the driving of the vacuum suction device is stopped.

【0023】加熱処理装置52内では、第3のアーム8
が受け渡しのための定位置に挿入されると、図17に示
す3本の支持ピン63が上昇し、第3のアーム8から支
持ピン63へウエハWが受け渡される。
In the heat treatment device 52, the third arm 8
Is inserted in a fixed position for delivery, the three support pins 63 shown in FIG. 17 are raised, and the wafer W is delivered from the third arm 8 to the support pins 63.

【0024】この場合、ウエハWの周縁部Wa にポリイ
ミドの残滓64が付着していたとしても、ウエハWの周
縁部Wa がアーム8に対して非接触の状態になっている
ので、ウエハWがアーム8に付いて離れにくくなるよう
なことはなく、ウエハWの受け渡しを円滑に行うことが
できる。したがって、受け渡しの際にウエハWがずれた
り落下したりする虞れはない。また、第3のアーム8に
よるウエハWの搬送や受け渡しの際に、ウエハWの周縁
部Wa からポリイミドの残滓64が落下しても、それを
ウエハWの周縁部18下方の滓受溝12で受けることが
できるので、残滓64が装置内に飛散するのを防止し、
パーティクルの発生を抑えることができる。このことが
歩留の向上につながる。
In this case, even if the polyimide residue 64 adheres to the peripheral edge Wa of the wafer W, the peripheral edge Wa of the wafer W is not in contact with the arm 8, so that the wafer W is The wafer W can be delivered and received smoothly without being attached to the arm 8 and becoming difficult to separate. Therefore, there is no risk that the wafer W will shift or drop during delivery. Further, even when the polyimide residue 64 drops from the peripheral edge Wa of the wafer W when the wafer W is transferred or delivered by the third arm 8, the polyimide residue 64 falls in the residue receiving groove 12 below the peripheral edge 18 of the wafer W. As it can be received, it prevents the residue 64 from scattering in the device,
Generation of particles can be suppressed. This leads to an improvement in yield.

【0025】この第一実施例において、図6に示すよう
に滓受溝12の底部12aに円錐状の吸込口19を多数
点在させ、或いは、図7に示すように滓受溝12の底部
12aを支持枠9側に傾斜させて所々に吸込口20を形
成しておき、滓受溝12で受けた残滓64を真空吸引に
よって吸い出すようにすれば、さらに効果的にパーティ
クルの発生を防止することができる。
In this first embodiment, a large number of conical suction ports 19 are scattered on the bottom 12a of the slag receiving groove 12 as shown in FIG. 6, or the bottom of the slag receiving groove 12 as shown in FIG. 12a is inclined toward the support frame 9 side to form the suction port 20 in some places, and the residue 64 received by the slag receiving groove 12 is sucked out by vacuum suction, thereby further effectively preventing the generation of particles. be able to.

【0026】また、この第一実施例において、例えば、
図8に示すように、各ウエハ吸着部14の位置に対応さ
せて、ウエハ支持枠9の内側に進退移動可能に爪部材2
1を組み込んでおき、通常のレジスト塗布の場合は同図
(a)のように爪部材21を前進させて使用してウエハ
Wを保持し、ポリイミドのような高粘度の処理液の塗布
処理を行う場合は爪部材21を後退させて使用せず同図
(b)のように吸着部14を使用してウエハWを吸着保
持するようにしてもよい。
In the first embodiment, for example,
As shown in FIG. 8, the claw member 2 is movable inward and backward inside the wafer support frame 9 in correspondence with the position of each wafer suction portion 14.
In the case of normal resist coating, the claw member 21 is moved forward and used to hold the wafer W and apply a high-viscosity processing liquid such as polyimide in the case of normal resist coating. When performing, the claw member 21 may be retracted and not used, and the wafer W may be suction-held by using the suction portion 14 as shown in FIG.

【0027】この図8の例では、ウエハ支持枠9の爪部
材21の移動空間22内にスプリング23を設けて爪部
材21を突出側に常時付勢しておくと共に、移動空間2
2に真空吸引装置を接続し、高粘度の処理液の塗布処理
の際には、真空吸引装置の作動させて移動空間22内を
減圧し、スプリング23の付勢力に抗して爪部材21を
支持枠9側に引き寄せる構成となっている。
In the example of FIG. 8, a spring 23 is provided in the moving space 22 of the claw member 21 of the wafer support frame 9 to constantly urge the claw member 21 toward the protruding side, and the moving space 2
2 is connected to a vacuum suction device, and during the coating process of the high-viscosity processing liquid, the vacuum suction device is operated to reduce the pressure in the moving space 22, and the claw member 21 is moved against the urging force of the spring 23. It is configured to be pulled toward the support frame 9 side.

【0028】このような構成において、吸着部14の使
用と爪部材21の使用の切り換えは、ウエハWに形成さ
れている膜の厚さを測定する光干渉型等の膜厚センサ
と、その測定結果に基づいて膜種を判定するマイコン等
の制御装置を搬送機構57に設けることにより自動化す
ることができる。例えば、膜厚が10μm程度と厚い場
合には、ポリイミドと判定し、ウエハ吸着部14を使用
する。また、膜厚が1〜2μmの場合には通常のフォト
レジストと判定し、爪部材21を使用する。この膜種の
判定は、上記第1,第2のアーム6,7とこの第3のア
ーム8との使い分けを自動的に行う場合にも有効であ
る。
In such a configuration, the use of the suction portion 14 and the use of the claw member 21 are switched between the film thickness sensor of the optical interference type or the like for measuring the thickness of the film formed on the wafer W and the measurement thereof. The transfer mechanism 57 can be automated by providing a control device such as a microcomputer that determines the film type based on the result. For example, when the film thickness is as thick as about 10 μm, it is determined to be polyimide, and the wafer suction unit 14 is used. When the film thickness is 1 to 2 μm, it is determined to be a normal photoresist, and the claw member 21 is used. The determination of the film type is also effective when the first and second arms 6 and 7 and the third arm 8 are automatically used properly.

【0029】◎第二実施例 図9には、この発明の第二実施例の搬送機構の第3のア
ームを示す平面図、図10には、図9の要部の拡大平面
図及び断面図が示されている。この第二実施例におい
て、第3のアーム8以外の構成は第一実施例と同様であ
るので、その説明は省略する。
Second Embodiment FIG. 9 is a plan view showing a third arm of the transport mechanism according to the second embodiment of the present invention, and FIG. 10 is an enlarged plan view and a sectional view of the essential part of FIG. It is shown. In the second embodiment, the configuration other than the third arm 8 is the same as that of the first embodiment, and the description thereof will be omitted.

【0030】第二実施例の第3のアーム8は、図9,図
10に示すように、一部切欠円環状に形成されたウエハ
支持枠9の両端部及び中間部の計3箇所に、ウエハWを
支承するための爪25が支持枠9の半径方向内側に突出
して設けられ、各爪25の上面に、ウエハWの周縁近傍
の下面に当接してこれを3点支持するための突起状吸着
部26A,26B,26Cが3種類のウエハWA,WB,W
C の径寸法に対応させて設けられている。
As shown in FIGS. 9 and 10, the third arm 8 of the second embodiment has a total of three positions on both ends and an intermediate part of the wafer support frame 9 formed in a partially cut-out annular shape. The claws 25 for supporting the wafer W are provided so as to project inward in the radial direction of the support frame 9, and the projections for abutting the upper surfaces of the claws 25 on the lower surface near the peripheral edge of the wafer W and supporting the same at three points. Of the three kinds of wafers WA, WB, W having three suction portions 26A, 26B, 26C
It is provided according to the diameter of C.

【0031】吸着部26A,26B,26Cの上面に
は、周方向に沿う長穴状の吸着口15がそれぞれ形成さ
れている。これらの吸着口15と真空吸引装置とを結ぶ
各空気通路27には、各吸着部26A,26B,26C
毎に吸引動作を切り換えるための開閉弁28A,28
B,28Cが設けられており、ウエハWのサイズに応じ
て、各爪25の3つの吸着部26A,26B,26Cの
うちのいずれか1つを使用してウエハWを吸着保持でき
るようになっている。例えば、大径のウエハWC を吸着
保持する場合、開閉弁28Cを開くことにより各爪25
の吸着部26Cが吸引を開始し、これら吸着部26Cが
ウエハWC の周縁近傍3箇所を吸着保持してウエハWC
を3点支持する。この場合、ウエハWC の周縁部Wa に
ポリイミドの残滓64が付着していたとしても、ウエハ
WC の周縁部Wa がアーム8に対して非接触の状態にな
っているので、ウエハWがアーム8に付いて離れにくく
なるようなことはなく、ウエハWの受け渡しを円滑に行
うことができる。中径、小径のウエハWB,WA を搬送す
る場合も、それぞれ開閉弁28B,28Aを開くことに
よりウエハWC の場合と同様にウエハWを吸着保持し、
ウエハWの受け渡しを円滑に行うことができる。
On the upper surfaces of the suction portions 26A, 26B and 26C, there are formed suction holes 15 each having a long hole extending in the circumferential direction. In each air passage 27 connecting these suction ports 15 and the vacuum suction device, each suction portion 26A, 26B, 26C is provided.
Open / close valves 28A, 28 for switching the suction operation for each
B and 28C are provided, and the wafer W can be suction-held by using one of the three suction portions 26A, 26B, and 26C of each claw 25 according to the size of the wafer W. ing. For example, when a large-diameter wafer WC is suction-held, each claw 25 can be opened by opening the opening / closing valve 28C.
The sucking portions 26C of the wafers start sucking, and the sucking portions 26C suck and hold the wafer WC at three locations in the vicinity of the peripheral edge thereof.
Support three points. In this case, even if the polyimide residue 64 is attached to the peripheral edge Wa of the wafer WC, the peripheral edge Wa of the wafer WC is not in contact with the arm 8, so that the wafer W is attached to the arm 8. The wafer W can be delivered and received smoothly without being attached and becoming difficult to separate. Even when the medium and small diameter wafers WB and WA are transferred, the opening and closing valves 28B and 28A are opened to suck and hold the wafer W as in the case of the wafer WC.
The wafer W can be delivered and received smoothly.

【0032】この第二実施例において、図11に示すよ
うに各吸着部26A,26B,26Cの高さは、大径の
ウエハWC を保持するための吸着部26Cの高さが最も
高く、吸着部26C,26B,26Aの順に低くなるよ
うに設定しておくことにより、例えば、大径のウエハW
C を保持した場合に、吸着部26B,26Aの周囲など
に付着していたポリイミドの残滓64などのパーティク
ルがウエハWC の下面に付着するのを防止することがで
きる。
In the second embodiment, as shown in FIG. 11, the suction portions 26A, 26B and 26C have the highest height of the suction portion 26C for holding the large-diameter wafer WC. By setting the portions 26C, 26B, and 26A so that they become lower in order, for example, a large-diameter wafer W
When C is held, it is possible to prevent particles such as polyimide residue 64 attached to the periphery of the adsorption portions 26B and 26A from adhering to the lower surface of the wafer WC.

【0033】また、このような第二実施例の構成におい
て、各吸着部26A,26B,26Cの使用の切り換え
は、各開閉弁28A,28B,28Cに電磁弁を使用す
ると共に、図12に示すように各空気通路27の途中に
検出手段としての真空度センサ29A,29B,29C
を設けて各空気通路27内の真空度を測定し、当初全て
の開閉弁28A,28B,28Cを開いた状態でウエハ
Wの受取りを行い、その直後の真空度の変化に基いて、
例えば、真空度センサ29A,29B,29Cの測定値
が所定の値よりも高くなった空気通路27の開閉弁は開
いたままとし、他の2つが閉じられるようにすることで
自動化することができる。また、真空度センサ29A,
29B,29Cに代えて、各吸着部26A,26B,2
6Cの近傍に、例えば光電式センサ30A,30B,3
0Cを上方に向けて設置してウエハWの有無を検出し、
ウエハWが検出された最も外側の吸着部の開閉弁のみ開
かれるようにすることで、各吸着部26A,26B,2
6Cの使用の切り換えを自動化することができる。
Further, in the construction of the second embodiment as described above, the switching of the use of the adsorption portions 26A, 26B and 26C is performed by using solenoid valves as the on-off valves 28A, 28B and 28C and shown in FIG. Thus, the vacuum degree sensors 29A, 29B, 29C as detection means are provided in the middle of each air passage 27.
Is provided to measure the degree of vacuum in each air passage 27, the wafer W is received with all the opening / closing valves 28A, 28B, 28C initially opened, and based on the change in degree of vacuum immediately after that,
For example, it can be automated by keeping the open / close valve of the air passage 27 in which the measured value of the vacuum degree sensors 29A, 29B, 29C is higher than a predetermined value and keeping the other two closed. . In addition, the vacuum sensor 29A,
Instead of 29B, 29C, each suction part 26A, 26B, 2
In the vicinity of 6C, for example, photoelectric sensors 30A, 30B, 3
0C is installed upward to detect the presence or absence of the wafer W,
By opening only the opening / closing valve of the outermost suction portion in which the wafer W is detected, each suction portion 26A, 26B, 2 is opened.
The switching of use of 6C can be automated.

【0034】以上の実施例では被処理体が半導体ウエハ
の場合について説明したが、被処理体は必ずしも半導体
ウエハに限られるものではなく、例えばLCD基板、セ
ラミックス基板、コンパクトディスク、プリント基板、
塗料を塗布する基板、光フィルター基板等について同様
に処理液を被覆するものについても適用できるものであ
る。
In the above embodiments, the case where the object to be processed is a semiconductor wafer has been described, but the object to be processed is not necessarily limited to the semiconductor wafer, and may be, for example, an LCD substrate, a ceramics substrate, a compact disc, a printed circuit board,
The same applies to substrates coated with coating materials, optical filter substrates, and the like, which are coated with the treatment liquid.

【0035】また、上記実施例では処理装置をレジスト
塗布現像装置に適用した場合について説明したが、これ
以外にも、例えばエッチング液塗布処理や磁性液塗布処
理を行う装置、塗料の塗装装置等にも適用できることは
勿論である。
In the above embodiment, the case where the processing apparatus is applied to the resist coating / developing apparatus has been described. However, other than this, for example, an apparatus for performing etching solution coating processing or magnetic liquid coating processing, a coating apparatus for coating material, etc. Of course, it is also applicable.

【0036】[0036]

【発明の効果】以上要するにこの発明の処理装置によれ
ば、以下のような優れた効果が発揮できる。
In summary, according to the processing apparatus of the present invention, the following excellent effects can be exhibited.

【0037】1)請求項1記載の処理装置によれば、被
処理体を保持するアームに被処理体の周縁近傍の下面に
当接してこれを数点支持する複数の突起状吸着部を設け
ることにより、被処理体をその周縁がアームに対して非
接触の状態で保持されるので、処理液の残滓によって被
処理体がアームから離れにくくなるようなことがなく、
ウエハの受け渡しを円滑に行うことができる。また、被
処理体の周縁近傍を支持する吸着部の外側に、被処理体
に供給された処理液等の残滓を受けるための滓受溝を形
成することにより、ウエハの周縁部からポリイミドの残
滓が落下しても、それを滓受溝で受けることができるの
で、残滓が装置内に飛散するのを防止し、パーティクル
の発生を抑えることができる。
1) According to the processing apparatus of the first aspect, the arm for holding the object to be processed is provided with a plurality of protrusion-like suction portions that abut on the lower surface near the peripheral edge of the object to be supported and support the same at several points. As a result, the object to be processed is held in a state where its peripheral edge is in non-contact with the arm, so that the object to be processed is not easily separated from the arm due to the residue of the processing liquid,
Wafers can be delivered and received smoothly. Further, by forming a slag receiving groove for receiving a residue such as a processing liquid supplied to the object to be processed outside the adsorption portion that supports the vicinity of the periphery of the object to be processed, the residue of the polyimide from the peripheral edge of the wafer is formed. Even if the shavings fall, they can be received by the slag receiving groove, so that the slag can be prevented from scattering into the apparatus, and the generation of particles can be suppressed.

【0038】2)請求項2及び3記載の処理装置によれ
ば、被処理体を保持するアームに被処理体の周方向数箇
所を支承するための複数の爪を設けると共に、各爪の上
面に、被処理体の周縁近傍の下面に当接してこれを数点
支持する突起状吸着部を被処理体の径寸法に対応させて
数箇所に設けることにより、被処理体をその周縁がアー
ムに対して非接触の状態で保持し、しかも、径寸法の異
なる数種類の被処理体に対して、アームを交換すること
なく対応できる。
2) According to the processing apparatus of claims 2 and 3, the arm for holding the object to be processed is provided with a plurality of claws for supporting several points in the circumferential direction of the object to be processed, and the upper surface of each claw is provided. In addition, by providing a plurality of projecting suction portions that abut the lower surface near the peripheral edge of the object to be processed and support the same at several points in correspondence with the diameter of the object to be processed, the object to be processed has its peripheral edge armed. It can be held in a non-contact state with respect to the above, and can cope with several kinds of objects having different diameters without exchanging the arm.

【図面の簡単な説明】[Brief description of drawings]

【図1】この発明の第一実施例の搬送機構のアーム部を
示す斜視図である。
FIG. 1 is a perspective view showing an arm portion of a transfer mechanism according to a first embodiment of the present invention.

【図2】この発明の第一実施例の搬送機構の概略正面図
である。
FIG. 2 is a schematic front view of the transport mechanism according to the first embodiment of this invention.

【図3】図1,図2の要部を示すアームの平面図であ
る。
3 is a plan view of an arm showing a main part of FIGS. 1 and 2. FIG.

【図4】図3のA部拡大斜視図である。FIG. 4 is an enlarged perspective view of part A of FIG.

【図5】図3のV−V断面図である。5 is a sectional view taken along line VV of FIG.

【図6】この発明の第一実施例の他の実施態様を示す部
分斜視断面図である。
FIG. 6 is a partial perspective sectional view showing another embodiment of the first embodiment of the present invention.

【図7】この発明の第一実施例の他の実施態様を示す部
分斜視断面図である。
FIG. 7 is a partial perspective sectional view showing another embodiment of the first embodiment of the present invention.

【図8】この発明の第一実施例の他の実施態様を示す概
略側面図である。
FIG. 8 is a schematic side view showing another embodiment of the first embodiment of the present invention.

【図9】この発明の第二実施例の搬送機構のアームを示
す平面図である。
FIG. 9 is a plan view showing an arm of the transfer mechanism according to the second embodiment of the present invention.

【図10】図9の要部を示す爪部の拡大図平面図及び側
面図である。
10 is an enlarged plan view and side view of a claw portion showing the main part of FIG. 9. FIG.

【図11】この発明の第二実施例の他の実施態様を示す
爪部の概略側面図である。
FIG. 11 is a schematic side view of a claw portion showing another embodiment of the second embodiment of the present invention.

【図12】この発明の第二実施例の他の実施態様を示す
吸着切換え手段の概略構成図である。
FIG. 12 is a schematic configuration diagram of adsorption switching means showing another embodiment of the second embodiment of the present invention.

【図13】この発明の第二実施例の他の実施態様を示す
吸着切換え手段の概略構成図である。
FIG. 13 is a schematic configuration diagram of adsorption switching means showing another embodiment of the second embodiment of the present invention.

【図14】レジスト塗布現像処理装置を示す斜視図であ
る。
FIG. 14 is a perspective view showing a resist coating and developing treatment apparatus.

【図15】図14の処理装置に組み込まれた従来の搬送
機構のアームを示す平面図である。
15 is a plan view showing an arm of a conventional transfer mechanism incorporated in the processing apparatus of FIG.

【図16】図14のB−B断面図である。16 is a cross-sectional view taken along line BB of FIG.

【図17】図14の処理装置におけ被処理体の受け渡し
動作を説明するための図である。
FIG. 17 is a diagram for explaining the transfer operation of the object to be processed in the processing apparatus of FIG.

【符号の説明】[Explanation of symbols]

6 第1のアーム 7 第2のアーム 8 第3のアーム(この発明に係るアーム) 9 ウエハ支持枠 10 ウエハ受部 12 滓受溝 14 ウエハ吸着部 15 吸着口 16 空気通路 25 爪 26A〜26C 突起状吸着部 28A〜28C 開閉弁 29A〜29C 真空度センサ(検出手段) 30A〜30C 光電式センサ(検出手段) 6 1st arm 7 2nd arm 8 3rd arm (arm which concerns on this invention) 9 Wafer support frame 10 Wafer receiving part 12 Slag receiving groove 14 Wafer adsorption | suction part 15 Adsorption port 16 Air passage 25 Claw 26A-26C Protrusion Adsorption section 28A to 28C open / close valve 29A to 29C vacuum degree sensor (detection means) 30A to 30C photoelectric sensor (detection means)

───────────────────────────────────────────────────── フロントページの続き (72)発明者 管林 輝 熊本県菊池郡菊陽町津久礼2655番地 東京 エレクトロン九州株式会社熊本事業所内 (72)発明者 村上 政明 熊本県菊池郡菊陽町津久礼2655番地 東京 エレクトロン九州株式会社熊本事業所内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Teru Kanbayashi 2655 Tsukyu, Kikuyo-cho, Kikuchi-gun, Kumamoto Prefecture Tokyo Electron Kyushu Co., Ltd. Kumamoto Plant (72) Inventor Masaaki Murakami 2655 Tsukyu, Kikuyo-cho, Kikuchi-gun, Kumamoto Prefecture Kumamoto Office of Tokyo Electron Kyushu Co., Ltd.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 被処理体に処理を施す複数の処理機構
と、これらの処理機構に上記被処理体を搬送するための
搬送機構と、この搬送機構に移動自在に設けられ上記被
処理体を保持するアームとを有する処理装置において、 上記アームに上記被処理体の周縁近傍の下面に当接して
これを数点支持する複数の突起状吸着部を設けると共
に、これら吸着部の外側に、上記被処理体に供給された
処理液等の残滓を受けるための滓受溝を形成したことを
特徴とする処理装置。
1. A plurality of processing mechanisms for performing processing on an object to be processed, a transfer mechanism for transferring the object to be processed to these processing mechanisms, and the object to be processed provided movably on the transfer mechanism. In a processing apparatus having a holding arm, the arm is provided with a plurality of projecting suction portions that abut on a lower surface in the vicinity of the peripheral edge of the object to be processed and support several points of the lower surface. A processing apparatus comprising: a slag receiving groove for receiving a residue such as a processing liquid supplied to an object to be processed.
【請求項2】 被処理体に処理を施す複数の処理機構
と、これらの処理機構に上記被処理体を搬送するための
搬送機構と、この搬送機構に移動自在に設けられ上記被
処理体を保持するアームとを有する処理装置において、 上記アームに上記被処理体の周方向数箇所を支承するた
めの複数の爪を設けると共に、各爪の上面に、上記被処
理体の周縁近傍の下面に当接してこれを数点支持する突
起状吸着部を被処理体の径寸法に対応させて数箇所に設
けたことを特徴とする処理装置。
2. A plurality of processing mechanisms for processing an object to be processed, a transfer mechanism for transferring the object to be processed to these processing mechanisms, and the object to be processed provided movably on the transfer mechanism. In the processing device having an arm for holding, a plurality of claws for supporting several points in the circumferential direction of the object to be processed are provided on the arm, and the upper surface of each claw is provided on the lower surface near the peripheral edge of the object to be processed. A processing apparatus comprising: a plurality of projecting suction portions, which abut and support several points of the workpiece, in correspondence with the diameter of the object to be processed.
【請求項3】 各突起状吸着部に被処理体の径寸法を検
出する検出手段を設け、この検出手段からの信号に基い
て上記被処理体を支持する部位の上記突起状吸着部を作
動させるようにしたことを特徴とする請求項2記載の処
理装置。
3. A detection means for detecting the diameter of the object to be processed is provided on each of the projecting suction parts, and the projecting suction part of the portion supporting the object to be processed is operated based on a signal from the detecting means. The processing device according to claim 2, wherein the processing device is configured to perform.
JP5163771A 1993-06-10 1993-06-10 Processing equipment Expired - Lifetime JP2920454B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5163771A JP2920454B2 (en) 1993-06-10 1993-06-10 Processing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5163771A JP2920454B2 (en) 1993-06-10 1993-06-10 Processing equipment

Publications (2)

Publication Number Publication Date
JPH06345262A true JPH06345262A (en) 1994-12-20
JP2920454B2 JP2920454B2 (en) 1999-07-19

Family

ID=15780409

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP2920454B2 (en)

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JP2007067303A (en) * 2005-09-01 2007-03-15 Tokyo Electron Ltd Substrate transfer device, method of transferring substrate, and coater and developing device
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JP2010098062A (en) * 2008-10-15 2010-04-30 Disco Abrasive Syst Ltd Support table
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5430585A (en) * 1977-08-11 1979-03-07 Max Co Ltd Device for stopping rotor in predetermined position of tool for driving and screwing screw spikes
JPS63141670A (en) * 1986-12-02 1988-06-14 Sony Corp Spin coater
JPS649169U (en) * 1987-07-07 1989-01-18
JPH0297322U (en) * 1989-01-19 1990-08-02
JPH059886U (en) * 1991-07-23 1993-02-09 シヤープ株式会社 Adsorption handler

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5430585A (en) * 1977-08-11 1979-03-07 Max Co Ltd Device for stopping rotor in predetermined position of tool for driving and screwing screw spikes
JPS63141670A (en) * 1986-12-02 1988-06-14 Sony Corp Spin coater
JPS649169U (en) * 1987-07-07 1989-01-18
JPH0297322U (en) * 1989-01-19 1990-08-02
JPH059886U (en) * 1991-07-23 1993-02-09 シヤープ株式会社 Adsorption handler

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