JPH10308408A - Semiconductor manufacturing equipment - Google Patents

Semiconductor manufacturing equipment

Info

Publication number
JPH10308408A
JPH10308408A JP9118035A JP11803597A JPH10308408A JP H10308408 A JPH10308408 A JP H10308408A JP 9118035 A JP9118035 A JP 9118035A JP 11803597 A JP11803597 A JP 11803597A JP H10308408 A JPH10308408 A JP H10308408A
Authority
JP
Japan
Prior art keywords
wire
lead wire
lead
bonding
connection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9118035A
Other languages
Japanese (ja)
Inventor
Kazuma Suzuki
一真 鈴木
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP9118035A priority Critical patent/JPH10308408A/en
Publication of JPH10308408A publication Critical patent/JPH10308408A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/7825—Means for applying energy, e.g. heating means
    • H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78313—Wedge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/786—Means for supplying the connector to be connected in the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/786—Means for supplying the connector to be connected in the bonding apparatus
    • H01L2224/78621—Holding means, e.g. wire clampers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78—Apparatus for connecting with wire connectors
    • H01L2224/786—Means for supplying the connector to be connected in the bonding apparatus
    • H01L2224/78621—Holding means, e.g. wire clampers
    • H01L2224/78631—Means for wire tension adjustments
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/851—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector the connector being supplied to the parts to be connected in the bonding apparatus
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512—Aligning
    • H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518—Translational movements
    • H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01004—Beryllium [Be]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Abstract

PROBLEM TO BE SOLVED: To provide the semiconductor manufacturing equipment which makes a wire connection between narrow-pitch array positions by wire bonding and obtains a multi-pin highly-integrated semiconductor device. SOLUTION: A lead wire 5 fed out of a wire guide part 9 to specific length is held by a wire conveyance part 12 and carried to above between an electrode pad 6 and the connection end 8 of the lead 7 as the wire connection position of a semi-finish semiconductor device 2, a position recognition part 14a recognizes whether or not the connection position 5a of the lead wire 5 is a specific position for the electrode pad 6, and a bonding tool 15 of a bonding part 16 provided separately from the wire guide part 9 bonds the wire. Consequently, the tip part of the bonding tool 15 can have a specific thin tip diameter nearly as large as the diameter of the lead wire 5 and even if the electrode pad 6 of the semi-finish semiconductor device 2 is arrayed at narrow intervals, the lead wire 5 can be connected by wire bonding.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、例えばパッケージ
に搭載された半導体チップの電極とパッケージのリード
との間をリードワイヤで接続するための半導体製造装置
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor manufacturing apparatus for connecting, for example, an electrode of a semiconductor chip mounted on a package and a lead of the package with a lead wire.

【０００２】[0002]

【従来の技術】周知の通り、半導体装置の高集積化等に
よる多ピン化にともないパッドの狭ピッチ化が進み、狭
ピッチの半導体チップの電極パッドとパッケージのリー
ドとをワイヤボンディングにより接続するには、半導体
チップにおける電極パッド配置等を千鳥足状にすること
が行われている。しかし、電極パッド等を千鳥足配置に
した場合には、通常の直径が３０μｍ程度のリードワイ
ヤを用いるもので、隣接するもの同士のピッチが７０μ
ｍ程度のものまでしか対応できず、さらに微細なピッチ
を要するものや千鳥足配置ができないものではワイヤボ
ンディングが行えなかった。2. Description of the Related Art As is well known, the pitch of pads has been reduced with the increase in the number of pins due to the high integration of semiconductor devices and the like, and the electrode pads of a semiconductor chip having a narrow pitch and the leads of a package have to be connected by wire bonding. In such a case, the arrangement of electrode pads and the like on a semiconductor chip is staggered. However, when the electrode pads and the like are arranged in a staggered manner, a lead wire having a normal diameter of about 30 μm is used, and the pitch between adjacent ones is 70 μm.
m, and wire bonding could not be performed for those requiring a finer pitch or those in which staggered placement was not possible.

【０００３】すなわち、パッドピッチが狭ピッチになる
と、ワイヤボンディングを行うためのキャピラリやウェ
ッジが隣接パッドにボンディングされたリードワイヤと
接触し、そのリードワイヤを変形させてしまうことが生
じる。このため、そのままではボンディングすることが
できず、この不都合を回避するためにキャピラリの先端
径を、隣接するリードワイヤとの接触を免れるような小
さなものとする加工が行われるが、加工限界があってキ
ャピラリでは先端径が７０μｍ程度が限界となってい
た。That is, when the pad pitch becomes narrow, a capillary or wedge for performing wire bonding comes into contact with a lead wire bonded to an adjacent pad, and the lead wire may be deformed. For this reason, bonding cannot be performed as it is, and in order to avoid this inconvenience, processing to reduce the tip diameter of the capillary so as to avoid contact with an adjacent lead wire is performed, but there is a processing limit. In the case of a capillary, the tip diameter is limited to about 70 μm.

【０００４】一方、パッドの狭ピッチ化に対してはＴＡ
Ｂ（Ｔａｐｅ ＡｕｔｏｍａｔｅｄＢｏｎｄｉｎｇ）技
術等があるが、製造時の能率が低く、またコストが高く
なることからワイヤボンディングによる狭ピッチ化対応
が強く求められている。On the other hand, to reduce the pitch of the pad, TA
There is a B (Tape Automated Bonding) technique and the like, but the efficiency at the time of manufacturing is low and the cost is high.

【０００５】[0005]

【発明が解決しようとする課題】上記のような状況に鑑
みて本発明はなされたもので、その目的とするところは
ワイヤボンディングによって狭ピッチで配列された部位
間のワイヤ接続が行え、多ピン・高集積化した半導体装
置を得ることができる半導体製造装置を提供することに
ある。SUMMARY OF THE INVENTION The present invention has been made in view of the above circumstances, and an object of the present invention is to perform wire connection between portions arranged at a narrow pitch by wire bonding. An object of the present invention is to provide a semiconductor manufacturing apparatus capable of obtaining a highly integrated semiconductor device.

【０００６】[0006]

【課題を解決するための手段】本発明の半導体製造装置
は、半導体チップを搭載して支持された半完成半導体装
置のワイヤ接続部位間上に所定長のリードワイヤを繰り
出すワイヤガイド部と、繰り出されたリードワイヤを保
持しワイヤ接続部位間上に移送するワイヤ移送部と、移
送されたリードワイヤの接続部位がワイヤ接続部位に対
し所定の位置にあるか否かを認識する位置認識部と、ワ
イヤ接続部位に対し所定の位置に位置したリードワイヤ
の接続部位をワイヤ接続部位にボンディングするための
ワイヤガイド部と別に設けられたボンディングツールを
有するボンディング部を備えていることを特徴とするも
のであり、さらに、ワイヤ移送部が、リードワイヤの減
圧吸引または磁気吸着による持上げ保持機構を備えてい
ることを特徴とするものである。According to the present invention, there is provided a semiconductor manufacturing apparatus comprising: a wire guide portion for feeding a lead wire of a predetermined length between wire connection portions of a semi-finished semiconductor device having a semiconductor chip mounted thereon; A wire transfer unit that holds the transferred lead wire and transfers it between the wire connection sites, and a position recognition unit that recognizes whether the connection site of the transferred lead wire is at a predetermined position with respect to the wire connection site, A bonding portion having a bonding tool provided separately from a wire guide portion for bonding a connection portion of a lead wire positioned at a predetermined position with respect to the wire connection portion to the wire connection portion. In addition, the wire transfer section is provided with a lifting and holding mechanism by vacuum suction or magnetic suction of the lead wire. It is intended.

【０００７】[0007]

【発明の実施の形態】以下、本発明の実施の形態を図面
を参照して説明する。Embodiments of the present invention will be described below with reference to the drawings.

【０００８】先ず、第１の実施形態を製造装置の概略構
成及び製造工程を示す図１乃至図５により説明する。図
１乃至図５は、本実施形態における製造工程の各工程を
説明するための図である。First, a first embodiment will be described with reference to FIGS. 1 to 5 which show a schematic configuration and a manufacturing process of a manufacturing apparatus. 1 to 5 are views for explaining each step of the manufacturing process in the present embodiment.

【０００９】図１乃至図５において、１は製造装置で、
その図示しない支持部には半完成半導体装置２が支持さ
れるようになっている。半完成半導体装置２は、そのパ
ッケージ３の所定部位に半導体チップ４を搭載してお
り、半導体チップ４の上面には、例えば紙面に垂直な方
向に、アルミニウム製ワイヤのリードワイヤ５を接続す
るワイヤ接続部位である複数の電極パッド６が、所定の
狭ピッチで配列されている。そしてパッケージ３には半
導体チップ４の各電極パッド６に対応して、同じくリー
ドワイヤ５を接続するワイヤ接続部位であるリード７の
接続端８が対向配置されており、リード７は図示しない
がアウター側がパッケージ３の外部に延出するように設
けられている。1 to 5, reference numeral 1 denotes a manufacturing apparatus.
The semi-finished semiconductor device 2 is supported on the support (not shown). The semi-finished semiconductor device 2 has a semiconductor chip 4 mounted on a predetermined portion of the package 3, and a lead wire 5 made of aluminum wire connected to an upper surface of the semiconductor chip 4, for example, in a direction perpendicular to the paper surface. A plurality of electrode pads 6 which are connection portions are arranged at a predetermined narrow pitch. A connection end 8 of a lead 7, which is a wire connection portion for connecting the lead wire 5, is also disposed on the package 3 so as to correspond to each electrode pad 6 of the semiconductor chip 4. The side is provided so as to extend outside the package 3.

【００１０】製造装置１には、支持部に支持された半完
成半導体装置２の上方にリードワイヤ５を繰り出すワイ
ヤガイド部９が設けられている。このワイヤガイド部９
はリードワイヤ５を繰り出す際のガイドとなるワイヤ管
１０と、ボンディング後に切断され、図示しないワイヤ
供給部側に残されたリードワイヤ５を保持するクランプ
１１を備えている。The manufacturing apparatus 1 is provided with a wire guide section 9 for feeding out the lead wire 5 above the semi-finished semiconductor device 2 supported by the support section. This wire guide section 9
Has a wire tube 10 serving as a guide when the lead wire 5 is paid out, and a clamp 11 which holds the lead wire 5 cut off after bonding and left on a wire supply unit (not shown).

【００１１】さらに製造装置１には、リードワイヤ５を
所定の位置に移送するワイヤ移送部１２が設けられい
る。このワイヤ移送部１２は、リードワイヤ５を図示し
ない吸引源を減圧動作させることにより先端部分に吸着
保持するヘッド１３と、このヘッド１３の水平方向及び
垂直方向の三次元の移動を行わせるようにしてリードワ
イヤ５の持ち上げ移送を行う図示しない周知の駆動機構
を備えている。なお、ワイヤ移送部１２のヘッド１３は
吸引源を減圧動作でリードワイヤ５を保持するようにし
ているが、リードワイヤが金製ワイヤでなる場合には、
ヘッドに磁力が働くようにするか否かによってリードワ
イヤを保持するようにしたり、放すようにしたりさせて
もよい。Further, the manufacturing apparatus 1 is provided with a wire transfer section 12 for transferring the lead wire 5 to a predetermined position. The wire transfer section 12 causes a head 13 that suction-holds the lead wire 5 to a distal end portion by depressurizing a suction source (not shown), and causes the head 13 to move three-dimensionally in the horizontal and vertical directions. A known drive mechanism (not shown) for lifting and transferring the lead wire 5 is provided. The head 13 of the wire transfer unit 12 holds the lead wire 5 by depressurizing the suction source, but when the lead wire is a gold wire,
The lead wire may be held or released depending on whether or not a magnetic force acts on the head.

【００１２】また製造装置１には、支持部に支持された
半完成半導体装置２の電極パッド６及びリード７の接続
端８の直上に、それぞれ位置認識部１４ａ，１４ｂが配
置されている。この位置認識部１４ａ，１４ｂは、ワイ
ヤ移送部１２により移送されたリードワイヤ５の片端側
の接続部位５ａが電極パッド６の直上に位置しているか
否か、あるいはリードワイヤ５の他側の接続部位５ｂが
リード７の接続端８の直上に位置しているか否かの位置
認識を行う。Further, in the manufacturing apparatus 1, the position recognition units 14a and 14b are respectively disposed immediately above the connection ends 8 of the electrode pads 6 and the leads 7 of the semi-finished semiconductor device 2 supported by the support unit. The position recognition units 14a and 14b determine whether the connection portion 5a on one end of the lead wire 5 transferred by the wire transfer unit 12 is located immediately above the electrode pad 6, or whether the connection portion 5a is connected to the other side of the lead wire 5. Position recognition is performed to determine whether or not the portion 5b is located immediately above the connection end 8 of the lead 7.

【００１３】さらに製造装置１には、略円錐形状で、例
えばリードワイヤ５の直径と略同寸法である所定先端径
の先端部を有するボンディングツール１５を備えたボン
ディング部１６が設けられている。ボンディングツール
１５は、電極パッド６及びリード７の接続端８の直上に
移動可能に設けられており、電極パッド６の直上に位置
しているリードワイヤ５の片端側の接続部位５ａを、そ
の対応する電極パッド６にボンディングし、同じくリー
ド７の接続端８の直上に位置しているリードワイヤ５の
他側の接続部位５ｂを、その対応するリード７の接続端
８にボンディングするように設けられている。Further, the manufacturing apparatus 1 is provided with a bonding section 16 provided with a bonding tool 15 having a substantially conical shape, for example, a tip having a predetermined tip diameter substantially equal to the diameter of the lead wire 5. The bonding tool 15 is provided movably just above the connection end 8 of the electrode pad 6 and the lead 7, and connects the connection part 5 a on one end side of the lead wire 5 located just above the electrode pad 6 to the corresponding position. The connection portion 5 b on the other side of the lead wire 5, which is also located immediately above the connection end 8 of the lead 7, is bonded to the connection end 8 of the corresponding lead 7. ing.

【００１４】そして、上記のように構成された製造装置
１でのリードワイヤ５の電極パッド６及びリード７の接
続端８へのボンディングは次のように行われる。The bonding of the lead wire 5 to the electrode pad 6 and the connection end 8 of the lead 7 in the manufacturing apparatus 1 configured as described above is performed as follows.

【００１５】すなわち、図１に示す第１の工程で、ワイ
ヤガイド部９のワイヤ管１０の先端から延出し、片端側
の接続部位５ａ近傍がワイヤ移送部１２のヘッド１３に
より吸着され保持されたリードワイヤ５が、支持部に支
持された半完成半導体装置２の上方に所定長だけ繰り出
される。そして、位置認識部１４ａからの接続部位５ａ
の電極パッド６の直上位置に対する位置ずれ信号を基
に、位置ずれ信号が零となるようヘッド１３を駆動機構
によって所定位置まで移動させ、リードワイヤ５の片端
側の接続部位５ａを電極パッド６の直上に位置させる。That is, in the first step shown in FIG. 1, the wire guide portion 9 extends from the distal end of the wire tube 10, and the vicinity of the connection portion 5 a on one end is sucked and held by the head 13 of the wire transfer portion 12. The lead wire 5 is extended by a predetermined length above the semi-finished semiconductor device 2 supported by the support. And the connection part 5a from the position recognition part 14a
The head 13 is moved to a predetermined position by a driving mechanism so that the position shift signal becomes zero based on the position shift signal with respect to the position immediately above the electrode pad 6 of the electrode pad 6. Position directly above.

【００１６】次に図２に示す第２の工程で、ボンディン
グ部１６のボンディングツール１５を、電極パッド６の
上方の位置認識部１４ａによる位置認識を行いながら電
極パッド６の直上に位置している接続部位５ａの直上に
移動させ、続いて接続部位５ａの電極パッド６に対する
位置ずれが無いよう監視しながら、ヘッド１３によるリ
ードワイヤ５の吸着を解除すると共にボンディングツー
ル１５を下降させて先端部でリードワイヤ５の接続部位
５ａを電極パッド６上にボンディングする。Next, in a second step shown in FIG. 2, the bonding tool 15 of the bonding section 16 is positioned immediately above the electrode pad 6 while performing position recognition by the position recognition section 14a above the electrode pad 6. The head 13 is released from the suction of the lead wire 5 and the bonding tool 15 is lowered while moving the connection part 5a directly above the connection part 5a and monitoring that there is no displacement of the connection part 5a with respect to the electrode pad 6. The connection portion 5a of the lead wire 5 is bonded onto the electrode pad 6.

【００１７】次に図３に示す第３の工程で、リード７の
接続端８の上方の位置認識部１４ｂによる位置認識を行
いながら、リードワイヤ５の他側の接続部位５ｂがリー
ド７の接続端８の直上に位置するようにし、片端側と同
様に位置認識部１４ｂによる位置認識を行いながらボン
ディングツール１５を接続部位５ｂの直上に移動させ
る。続いて接続部位５ｂの接続端８に対する位置ずれが
無いよう監視しながら、ボンディングツール１５を下降
させて先端部でリードワイヤ５の接続部位５ｂをリード
７の接続端８上にボンディングする。なお、接続部位５
ｂのボンディングを行う際には、ワイヤ管１０の先端か
ら当初繰り出された長さだけでは不足しているリードワ
イヤ５の不足分の長さが繰り出される。Next, in a third step shown in FIG. 3, while the position recognition section 14b above the connection end 8 of the lead 7 performs position recognition, the connection portion 5b on the other side of the lead wire 5 is connected to the lead 7. The bonding tool 15 is moved right above the connection site 5b while being positioned just above the end 8 while performing position recognition by the position recognition unit 14b similarly to the one end side. Subsequently, the bonding tool 15 is lowered and the connection portion 5b of the lead wire 5 is bonded to the connection end 8 of the lead 7 at the distal end while monitoring the position of the connection portion 5b so as not to be displaced from the connection end 8. In addition, connection part 5
When performing the bonding of b, the short length of the lead wire 5 that is insufficient only by the length initially drawn from the tip of the wire tube 10 is fed.

【００１８】次に図４に示す第４の工程で、他側の接続
部位５ｂがリード７の接続端８にボンディングされたリ
ードワイヤ５は、ワイヤ管１０側の部分で切断され、ま
た切断によってワイヤ供給部側に残されたリードワイヤ
５は、ワイヤ供給部によって切断先端部分がワイヤ管１
０内に引き込まれないようクランプ１１によって保持さ
れる。Next, in a fourth step shown in FIG. 4, the lead wire 5 having the connection portion 5b on the other side bonded to the connection end 8 of the lead 7 is cut at the portion on the wire tube 10 side. The leading end of the lead wire 5 left on the side of the wire supply unit is cut by the wire supply unit at the tip end of the wire tube 1.
It is held by the clamp 11 so as not to be pulled into 0.

【００１９】次に図５に示す第５の工程で、クランプ１
１によって保持されたリードワイヤ５のワイヤ管１０か
ら延出する片端部分を、ワイヤ移送部１２のヘッド１３
に吸着させて保持する。そして、次に他の電極パッド６
とリード７の接続端８の間のリードワイヤ５での接続が
可能となるようワイヤガイド部９を移動させてから、再
び上記の第１の工程に戻り、他の電極パッド６とリード
７の接続端８のリードワイヤ５による接続を行う。Next, in a fifth step shown in FIG.
One end portion of the lead wire 5 held by the wire tube 10 and extending from the wire tube 10 is
And hold it. Then, another electrode pad 6
After moving the wire guide portion 9 so that the connection by the lead wire 5 between the connection end 8 of the lead 7 and the lead 7 becomes possible, the process returns to the first step again, and the other electrode pad 6 and the lead 7 are connected. The connection end 8 is connected by the lead wire 5.

【００２０】以上のようにボンディングツール１５の先
端部分からリードワイヤ５を繰り出すのではなく、ワイ
ヤガイド部９からリードワイヤ５を繰り出し、ワイヤ移
送部１２で所定位置にリードワイヤ５の接続部位５ａが
位置するように移送し、ボンディングのみを行うボンデ
ィングツール１５でボンディングを行うために、ボンデ
ィングツール１５の先端部を、リードワイヤ５の直径と
ほぼ同程度の細い所定先端径を有するものとすることが
できる。その結果、半完成半導体装置２の狭ピッチで配
列された電極パッド６やリード７の接続端８への、ワイ
ヤボンディングによるリードワイヤ５の接続が行えるこ
とになり、多ピン・高集積化した半導体装置を得ること
ができる。As described above, the lead wire 5 is not drawn out from the tip end portion of the bonding tool 15 but is drawn out from the wire guide portion 9, and the connecting portion 5 a of the lead wire 5 is located at a predetermined position by the wire transfer portion 12. In order to perform the bonding with the bonding tool 15 which is transported so as to be positioned and performs only the bonding, the distal end of the bonding tool 15 may have a predetermined distal diameter which is almost the same as the diameter of the lead wire 5. it can. As a result, it is possible to connect the lead wires 5 by wire bonding to the connection ends 8 of the electrode pads 6 and the leads 7 arranged at a narrow pitch of the semi-finished semiconductor device 2, and a multi-pin, highly integrated semiconductor A device can be obtained.

【００２１】次に、第２の実施形態を製造装置の概略構
成及び製造工程を示す図６乃至図９により説明する。図
６乃至図９は、本実施形態における製造工程の各工程を
説明するための図である。Next, a second embodiment will be described with reference to FIGS. 6 to 9 which show a schematic configuration and a manufacturing process of a manufacturing apparatus. 6 to 9 are views for explaining each step of the manufacturing process in the present embodiment.

【００２２】図６乃至図９において、２１は製造装置
で、その図示しない支持部には半完成半導体装置２が支
持されるようになっており、この支持部に支持された半
完成半導体装置２の上方にリードワイヤ２２を繰り出す
ワイヤガイド部２３が設けられている。ワイヤガイド部
２３は所定長さに切断されたリードワイヤ２２を繰り出
す際のガイドとなるワイヤ管１０と、所定長さのリード
ワイヤ２２が切り出された後図示しないワイヤ供給部側
に残されたリードワイヤを保持する図示しないクランプ
を備えている。さらに製造装置２１には、リードワイヤ
２２を所定の位置に移送するワイヤ移送部２４が設けら
れいる。このワイヤ移送部２４は、所定長さに切り出さ
れたリードワイヤ２２を図示しない吸引源を減圧動作さ
せることにより先端部分に吸着保持するヘッド１３と、
このヘッド１３の水平方向及び垂直方向の三次元の移動
を行わせるようにしてリードワイヤ２２の持ち上げ移送
を行う図示しない周知の駆動機構を備えている。In FIGS. 6 to 9, reference numeral 21 denotes a manufacturing apparatus. The semi-finished semiconductor device 2 is supported by a support (not shown). A wire guide portion 23 for feeding out the lead wire 22 is provided above the wire. The wire guide portion 23 serves as a guide when the lead wire 22 cut out to a predetermined length is fed out, and the lead left on a wire supply portion (not shown) after the lead wire 22 having a predetermined length is cut out. A clamp (not shown) for holding the wire is provided. Further, the manufacturing apparatus 21 is provided with a wire transfer unit 24 for transferring the lead wire 22 to a predetermined position. The head 13 holds the lead wire 22 cut into a predetermined length by suction at a distal end portion by depressurizing a suction source (not shown);
A well-known drive mechanism (not shown) that lifts and transfers the lead wire 22 so that the head 13 moves three-dimensionally in the horizontal and vertical directions is provided.

【００２３】また製造装置２１には、支持部に支持され
た半完成半導体装置２の電極パッド６及びリード７の接
続端８の直上に、それぞれ位置認識部１４ａ，１４ｂが
配置されている。この位置認識部１４ａ，１４ｂは、ワ
イヤ移送部２４により移送されたリードワイヤ２２の片
端側の接続部位２２ａが電極パッド６の直上に位置して
いるか否か、あるいはリードワイヤ２２の他側の接続部
位２２ｂがリード７の接続端８の直上に位置しているか
否かの位置認識を行う。In the manufacturing apparatus 21, position recognition units 14a and 14b are respectively disposed immediately above the connection ends 8 of the electrode pads 6 and the leads 7 of the semi-finished semiconductor device 2 supported by the support unit. The position recognition units 14a and 14b determine whether the connection portion 22a on one end of the lead wire 22 transferred by the wire transfer unit 24 is located immediately above the electrode pad 6, or whether the connection portion 22a is connected to the other side of the lead wire 22. Position recognition is performed to determine whether or not the portion 22b is located immediately above the connection end 8 of the lead 7.

【００２４】さらに製造装置２１には、略円錐形状で、
例えばリードワイヤ２２の直径と略同寸法である所定先
端径の先端部を有するボンディングツール１５ａ，１５
ｂを、電極パッド６の直上及びリード７の接続端８の直
上にそれぞれ対応するように備えたボンディング部２５
が設けられている。そして電極パッド６の直上に位置し
ているリードワイヤ２２の片端側の接続部位２２ａを、
その対応する電極パッド６にボンディングし、同じくリ
ード７の接続端８の直上に位置しているリードワイヤ２
２の他側の接続部位２２ｂを、その対応するリード７の
接続端８にボンディングするようになっている。Further, the manufacturing apparatus 21 has a substantially conical shape,
For example, bonding tools 15a and 15 having a tip having a predetermined tip diameter substantially the same as the diameter of the lead wire 22.
b corresponding to a portion directly above the electrode pad 6 and a portion immediately above the connection end 8 of the lead 7, respectively.
Is provided. Then, the connection portion 22a on one end side of the lead wire 22 located immediately above the electrode pad 6 is
The lead wire 2 which is bonded to the corresponding electrode pad 6 and is also located immediately above the connection end 8 of the lead 7
The other connection portion 22 b on the other side is bonded to the connection end 8 of the corresponding lead 7.

【００２５】そして、上記のように構成された製造装置
２１でのリードワイヤ２２の電極パッド６及びリード７
の接続端８へのボンディングは次のように行われる。The electrode pad 6 and the lead 7 of the lead wire 22 in the manufacturing apparatus 21 configured as described above
Bonding to the connection end 8 is performed as follows.

【００２６】すなわち、図６に示す第１の工程で、ワイ
ヤガイド部２３のワイヤ管１０の先端から所定長さに切
断されたリードワイヤ２２は、支持部に支持された半完
成半導体装置２の上方に繰り出され、リードワイヤ２２
の略中央部分がワイヤ移送部２４のヘッド１３により吸
着され保持される。そしてリードワイヤ２２のワイヤ移
送部２４による移送が行われ、位置認識部１４ａからの
接続部位２２ａの電極パッド６の直上位置に対する位置
ずれ信号や、位置認識部１４ｂからの接続部位２２ｂの
リード７の接続端８の直上位置に対する位置ずれ信号を
基に、位置ずれ信号が零となるようヘッド１３を駆動機
構によって所定位置まで移動させ、リードワイヤ２２の
両端の接続部位２２ａ及び接続部位２２ｂを、電極パッ
ド６の直上及びリード７の接続端８の直上に位置させ
る。That is, in the first step shown in FIG. 6, the lead wire 22 cut to a predetermined length from the distal end of the wire tube 10 of the wire guide portion 23 is connected to the semi-finished semiconductor device 2 supported by the support portion. The lead wire 22
Is held by the head 13 of the wire transfer unit 24 by suction. The transfer of the lead wire 22 by the wire transfer unit 24 is performed, and a position shift signal from the position recognition unit 14a with respect to the position immediately above the electrode pad 6 of the connection part 22a, and the position of the lead 7 of the connection part 22b from the position recognition unit 14b. The head 13 is moved to a predetermined position by a drive mechanism so that the position shift signal becomes zero based on the position shift signal with respect to the position immediately above the connection end 8, and the connection portions 22a and 22b at both ends of the lead wire 22 are connected to the electrodes. It is located directly above the pad 6 and directly above the connection end 8 of the lead 7.

【００２７】次に図７に示す第２の工程で、ワイヤ移送
部２４のヘッド１３によりリードワイヤ２２の略中央部
分を保持した状態で、電極パッド６の上方の位置認識部
１４ａによる位置認識を行い、接続部位２２ａの電極パ
ッド６に対する位置ずれが無いよう監視しながら、ボン
ディング部２５のボンディングツール１５ａを下降させ
て先端部でリードワイヤ２２の接続部位２２ａを電極パ
ッド６上にボンディングする。Next, in the second step shown in FIG. 7, while the head 13 of the wire transfer unit 24 holds the substantially central portion of the lead wire 22, the position recognition by the position recognition unit 14a above the electrode pad 6 is performed. Then, the bonding tool 15a of the bonding portion 25 is lowered and the connection portion 22a of the lead wire 22 is bonded to the electrode pad 6 at the tip while monitoring the position of the connection portion 22a so as not to be displaced from the electrode pad 6.

【００２８】次に図８に示す第３の工程で、リード７の
接続端８の上方の位置認識部１４ｂによる位置認識を行
い、接続部位２２ｂのリード７の接続端８に対する位置
ずれが無いよう監視しながら、ボンディング部２５のボ
ンディングツール１５ｂを下降させて先端部でリードワ
イヤ２２の接続部位２２ｂを接続端８上にボンディング
する。Next, in a third step shown in FIG. 8, the position is recognized by the position recognizing portion 14b above the connection end 8 of the lead 7, so that there is no displacement of the connection portion 22b with respect to the connection end 8 of the lead 7. While monitoring, the bonding tool 15b of the bonding section 25 is lowered to bond the connection portion 22b of the lead wire 22 to the connection end 8 at the tip.

【００２９】次に図９に示す第４の工程で、両端の接続
部位２２ａ，２２ｂが電極パッド６及びリード７の接続
端８にボンディングされたリードワイヤ２２のワイヤ移
送部２４のヘッド１３によるリードワイヤ２２の吸着を
解除する。Next, in a fourth step shown in FIG. 9, the connection portions 22a and 22b at both ends are connected to the electrode pads 6 and the connection ends 8 of the leads 7 by the head 13 of the wire transfer portion 24 of the lead wire 22. The suction of the wire 22 is released.

【００３０】以上のように本実施形態においても、ボン
ディングツール１５ａ，１５ｂの先端部分からリードワ
イヤ２２を繰り出すのではなく、ワイヤガイド部２３か
らリードワイヤ２２を繰り出し、ワイヤ移送部２４で所
定位置にリードワイヤ２２の接続部位２２ａ，２２ｂが
位置するように移送し、ボンディングのみを行うボンデ
ィングツール１５ａ，１５ｂでボンディングを行うため
に、ボンディングツール１５ａ，１５ｂの先端部を、リ
ードワイヤ２２の直径とほぼ同程度の細い所定先端径を
有するものとすることができ、第１の実施形態と同様の
効果を得ることができる。As described above, also in the present embodiment, the lead wire 22 is not drawn out from the tip portions of the bonding tools 15a and 15b, but is drawn out from the wire guide portion 23, and is moved to a predetermined position by the wire transfer portion 24. In order to transfer the lead wires 22 so that the connection portions 22a and 22b are located and to perform bonding with the bonding tools 15a and 15b that perform only bonding, the distal ends of the bonding tools 15a and 15b are set to have a diameter substantially equal to the diameter of the lead wire 22. It is possible to have the same small tip diameter as the same, and it is possible to obtain the same effect as in the first embodiment.

【００３１】[0031]

【発明の効果】以上の説明から明らかなように、本発明
が、ワイヤガイド部から所定長さ繰り出されたリードワ
イヤを、ワイヤ移送部で保持し半完成半導体装置のワイ
ヤ接続部位間上に移送し、位置認識部でリードワイヤの
接続部位がワイヤ接続部位に対し所定の位置にあるか否
かを認識し、ワイヤガイド部とは別に設けられたボンデ
ィング部のボンディングツールでボンディングを行うこ
とができる構成を有するので、ワイヤボンディングによ
って狭ピッチで配列された部位間のワイヤ接続を行うこ
とができて、多ピン・高集積化した半導体装置を得るこ
とができる等の効果を奏する。As is apparent from the above description, according to the present invention, the lead wire fed out from the wire guide portion by a predetermined length is held by the wire transfer portion and transferred between the wire connection portions of the semi-finished semiconductor device. Then, the position recognition unit recognizes whether the connection site of the lead wire is at a predetermined position with respect to the wire connection site, and can perform bonding using a bonding tool of a bonding unit provided separately from the wire guide unit. With this configuration, it is possible to perform wire connection between portions arranged at a narrow pitch by wire bonding, and to obtain an effect of obtaining a multi-pin, highly integrated semiconductor device.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の第１の実施形態における製造工程の第
１の工程を説明するための図である。FIG. 1 is a diagram for explaining a first step of a manufacturing process according to a first embodiment of the present invention.

【図２】本発明の第１の実施形態における製造工程の第
２の工程を説明するための図である。FIG. 2 is a view for explaining a second step of the manufacturing process according to the first embodiment of the present invention.

【図３】本発明の第１の実施形態における製造工程の第
３の工程を説明するための図である。FIG. 3 is a view for explaining a third step of the manufacturing process according to the first embodiment of the present invention.

【図４】本発明の第１の実施形態における製造工程の第
４の工程を説明するための図である。FIG. 4 is a view for explaining a fourth step of the manufacturing process according to the first embodiment of the present invention.

【図５】本発明の第１の実施形態における製造工程の第
５の工程を説明するための図である。FIG. 5 is a view for explaining a fifth step of the manufacturing process according to the first embodiment of the present invention.

【図６】本発明の第２の実施形態における製造工程の第
１の工程を説明するための図である。FIG. 6 is a diagram illustrating a first step of a manufacturing process according to a second embodiment of the present invention.

【図７】本発明の第２の実施形態における製造工程の第
２の工程を説明するための図である。FIG. 7 is a view for explaining a second step in the manufacturing process according to the second embodiment of the present invention.

【図８】本発明の第２の実施形態における製造工程の第
３の工程を説明するための図である。FIG. 8 is a view for explaining a third step in the manufacturing process according to the second embodiment of the present invention.

【図９】本発明の第２の実施形態における製造工程の第
４の工程を説明するための図である。FIG. 9 is a view for explaining a fourth step of the manufacturing process according to the second embodiment of the present invention.

【符号の説明】[Explanation of symbols]

２…半完成半導体装置 ４…半導体チップ ５，２２…リードワイヤ ５ａ，５ｂ，２２ａ，２２ｂ…接続部位 ６…電極パッド ８…接続端 ９，２３…ワイヤガイド部 １２，２４…ワイヤ移送部 １４ａ，１４ｂ…位置認識部 １５，１５ａ，１５ｂ…ボンディングツール １６，２５…ボンディング部 2 Semi-finished semiconductor device 4 Semiconductor chip 5, 22 Lead wire 5a, 5b, 22a, 22b Connection site 6 Electrode pad 8 Connection end 9, 23 Wire guide unit 12, 24 Wire transfer unit 14a 14b: Position recognition unit 15, 15a, 15b: Bonding tool 16, 25: Bonding unit

Claims (2)

【特許請求の範囲】[Claims] 【請求項１】 半導体チップを搭載して支持された半完
成半導体装置のワイヤ接続部位間上に所定長のリードワ
イヤを繰り出すワイヤガイド部と、繰り出された前記リ
ードワイヤを保持し前記ワイヤ接続部位間上に移送する
ワイヤ移送部と、移送された前記リードワイヤの接続部
位が前記ワイヤ接続部位に対し所定の位置にあるか否か
を認識する位置認識部と、前記ワイヤ接続部位に対し所
定の位置に位置した前記リードワイヤの接続部位を前記
ワイヤ接続部位にボンディングするための前記ワイヤガ
イド部と別に設けられたボンディングツールを有するボ
ンディング部を備えていることを特徴とする半導体製造
装置。1. A wire guide portion for feeding out a lead wire of a predetermined length between wire connection portions of a semi-finished semiconductor device on which a semiconductor chip is mounted and supported, and the wire connection portion for holding the fed out lead wire. A wire transfer unit configured to transfer the lead wire, a position recognition unit that recognizes whether or not the connection site of the transferred lead wire is at a predetermined position with respect to the wire connection site; A semiconductor manufacturing apparatus comprising: a bonding portion having a bonding tool provided separately from the wire guide portion for bonding a connection portion of the lead wire positioned at a position to the wire connection portion. 【請求項２】 ワイヤ移送部が、リードワイヤの減圧吸
引または磁気吸着による持上げ保持機構を備えているこ
とを特徴とする請求項１記載の半導体製造装置。2. The semiconductor manufacturing apparatus according to claim 1, wherein the wire transfer section includes a lifting and holding mechanism by means of vacuum suction or magnetic suction of the lead wire.
JP9118035A 1997-05-08 1997-05-08 Semiconductor manufacturing equipment Pending JPH10308408A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9118035A JPH10308408A (en) 1997-05-08 1997-05-08 Semiconductor manufacturing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9118035A JPH10308408A (en) 1997-05-08 1997-05-08 Semiconductor manufacturing equipment

Publications (1)

Publication Number Publication Date
JPH10308408A true JPH10308408A (en) 1998-11-17

Family

ID=14726442

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9118035A Pending JPH10308408A (en) 1997-05-08 1997-05-08 Semiconductor manufacturing equipment

Country Status (1)

Country Link
JP (1) JPH10308408A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6138332B1 (en) * 2016-12-22 2017-05-31 ハイソル株式会社 Vacuum transfer method
WO2023238390A1 (en) * 2022-06-10 2023-12-14 株式会社カイジョー Wiring device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6138332B1 (en) * 2016-12-22 2017-05-31 ハイソル株式会社 Vacuum transfer method
JP2018107195A (en) * 2016-12-22 2018-07-05 ハイソル株式会社 Adsorption conveying method
WO2023238390A1 (en) * 2022-06-10 2023-12-14 株式会社カイジョー Wiring device

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