JPH10303453A - Optical semiconductor device and its manufacture - Google Patents
Optical semiconductor device and its manufactureInfo
- Publication number
- JPH10303453A JPH10303453A JP10798897A JP10798897A JPH10303453A JP H10303453 A JPH10303453 A JP H10303453A JP 10798897 A JP10798897 A JP 10798897A JP 10798897 A JP10798897 A JP 10798897A JP H10303453 A JPH10303453 A JP H10303453A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- light
- island
- light emitting
- resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 230000003287 optical effect Effects 0.000 title claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000011347 resin Substances 0.000 claims abstract description 41
- 229920005989 resin Polymers 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/16—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources
- H01L31/167—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto the semiconductor device sensitive to radiation being controlled by the light source or sources the light sources and the devices sensitive to radiation all being semiconductor devices characterised by at least one potential or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は光半導体装置に関わ
るものであり、特に発光素子および受光素子を一体に形
成するフォトカプラに関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an optical semiconductor device, and more particularly to a photocoupler in which a light emitting element and a light receiving element are integrally formed.
【０００２】[0002]
【従来の技術】図4は従来用いられているフォトカプラ
の断面構造を示す図であり、以下図4を用いて従来のフ
ォトカプラについて説明する。2. Description of the Related Art FIG. 4 is a diagram showing a cross-sectional structure of a photocoupler conventionally used. The conventional photocoupler will be described below with reference to FIG.
【０００３】図4において1は発光側のリードフレーム、
2は受光側のリードフレームであり、それぞれリードフ
レームのアイランド部に発光素子3、受光素子4が固着さ
れている。図4に示す5は透光性樹脂で上記発光素子3お
よび受光素子4を対向させた状態で連結している。さら
にこれらは外乱光を防ぐためエポキシ系のモールド樹脂
6により樹脂封止されている。In FIG. 4, reference numeral 1 denotes a light-emitting side lead frame;
Reference numeral 2 denotes a light receiving side lead frame, and a light emitting element 3 and a light receiving element 4 are fixed to an island portion of the lead frame, respectively. Reference numeral 5 shown in FIG. 4 denotes a light-transmitting resin, and the light-emitting element 3 and the light-receiving element 4 are connected to each other in a state where they face each other. Furthermore, these are epoxy-based mold resins to prevent disturbance light.
6 is resin-sealed.
【０００４】図5(A)、5(B)はそれぞれ従来の発光側のリ
ードフレーム1、受光側のリードフレーム2の形状を示す
図であり、図6は透光性樹脂5を充填する様子を示す図で
ある。以下図5、図6を用いて図4に示すようなフォトカ
プラを製造する方法について説明する。FIGS. 5A and 5B are views showing the shapes of a conventional light emitting side lead frame 1 and a light receiving side lead frame 2, respectively. FIG. FIG. Hereinafter, a method of manufacturing the photocoupler shown in FIG. 4 will be described with reference to FIGS.
【０００５】まず図5(A)、5(B)に示すリードフレームの
アイランド部分のそれぞれ斜線で示す領域に発光素子3
および受光素子4が固着される。First, the light emitting element 3 is placed in each of the shaded areas of the island portion of the lead frame shown in FIGS. 5A and 5B.
And the light receiving element 4 is fixed.
【０００６】その後図6に示すように発光素子3が搭載さ
れた発光側リードフレーム1および受光素子4が搭載され
た受光側リードフレーム2を対向させ、この状態で発光
側リードフレーム1の斜め上方よりディスペンサ7を用い
て透光性樹脂5を充填することによって発光素子3および
受光素子4を連結する。Thereafter, as shown in FIG. 6, the light emitting side lead frame 1 on which the light emitting element 3 is mounted and the light receiving side lead frame 2 on which the light receiving element 4 is mounted are opposed to each other. The light emitting element 3 and the light receiving element 4 are connected by filling the translucent resin 5 with the dispenser 7.
【０００７】その後モールド封止材6によって全体を樹
脂封止して図4に示すようなフォトカプラが作成され
る。[0007] Thereafter, the entire structure is resin-sealed with a mold sealing material 6 to produce a photocoupler as shown in FIG.
【０００８】[0008]
【発明が解決しようとする課題】しかしながら従来のフ
ォトカプラでは、フォトカプラを製造する際、透光性樹
脂5を充填するディスペンサ7の微妙な位置のずれによ
り、充填される透光性樹脂5がリードフレーム1の上面
（受光側リードフレーム2と対向しない面）へと付着し
てしまう場合があった。（図6において丸印で示す。）
その結果、透光性樹脂5の形状がディスペンサ7の位置に
よって変化してしまう。このようなフォトカプラでは、
透光性樹脂5とモールド樹脂6の界面における反射光も受
光素子4で検知するので、透光性樹脂5の形状が変化する
とフォトカプラの光伝達効率が変化してしまう場合があ
った。However, in the conventional photocoupler, when manufacturing the photocoupler, the light-transmitting resin 5 to be filled is displaced due to a slight displacement of the dispenser 7 for filling the light-transmitting resin 5. In some cases, it adhered to the upper surface of the lead frame 1 (the surface not facing the light receiving side lead frame 2). (Indicated by a circle in FIG. 6.)
As a result, the shape of the translucent resin 5 changes depending on the position of the dispenser 7. In such a photocoupler,
Since light reflected at the interface between the translucent resin 5 and the mold resin 6 is also detected by the light receiving element 4, the light transmission efficiency of the photocoupler may change when the shape of the translucent resin 5 changes.
【０００９】またリードフレーム上面に透光性樹脂5が
付着することによりリードフレーム1とモールド樹脂6と
の密着性が低下してしまうという問題もあった。Further, there is another problem that the adhesion between the lead frame 1 and the molding resin 6 is reduced due to the attachment of the translucent resin 5 to the upper surface of the lead frame.
【００１０】[0010]
【課題を解決するための手段】本発明は上記のような課
題を鑑みてなされたものであり、発光半導体素子が固着
された第1のアイランド部を有する第1のリードフレーム
と、受光半導体素子が固着された第2のアイランド部を
有する第2のリードフレームと、前記発光半導体素子お
よび受光半導体素子を対向させた状態で連結する透光性
樹脂と、前記透光性樹脂を包囲する封止用部材とを有す
る光半導体装置において、前記第1のアイランド部およ
び第2のアイランド部のいずれか一方の端部に凹部を設
けたことを特徴とする。SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has a first lead frame having a first island portion to which a light emitting semiconductor element is fixed, and a light receiving semiconductor element. A second lead frame having a second island portion to which the light emitting semiconductor element and the light receiving semiconductor element are connected in a state where the light emitting semiconductor element and the light receiving semiconductor element are opposed to each other; and a sealing enclosing the light transmitting resin. And a concave member is provided at one end of the first island portion and the second island portion.
【００１１】[0011]
【発明の実施の形態】図1は本発明第1の実施の形態にお
けるフォトカプラの発光側リードフレームを示す図であ
る。また図2は本発明のフォトカプラにおいて、発光素
子と受光素子を対向させた状態で透光性樹脂を充填する
様子を示す図である。これらの図において図4、5および
6と共通する部分については同一の符号を付して表す。
以下図1および図2を用いて本発明について説明する。FIG. 1 is a view showing a light emitting side lead frame of a photocoupler according to a first embodiment of the present invention. FIG. 2 is a view showing a state in which a translucent resin is filled in the photocoupler of the present invention in a state where the light emitting element and the light receiving element are opposed to each other. In these figures, FIGS. 4, 5 and
Portions common to 6 are denoted by the same reference numerals.
Hereinafter, the present invention will be described with reference to FIGS.
【００１２】発光側のリードフレーム10は発光素子が搭
載されるアイランド部102、外部と接続されるリード部1
03、104とを有している。図1に示すように発光素子が搭
載されるアイランド部102は、その端部の中央付近にそ
の幅Ｘが0.3ｍｍ程度の凹部110が設けられ、その両端に
は角部（凸部）111が存在する。この凹部の幅Ｘは透光
性樹脂5を充填するディスペンサ7の直径よりやや大きい
程度であることが望ましい。また受光側のリードフレー
ムに関しては従来の図5(B)と同様のものである。The light emitting side lead frame 10 includes an island portion 102 on which a light emitting element is mounted, and a lead portion 1 connected to the outside.
03 and 104. As shown in FIG. 1, the island portion 102 on which the light emitting element is mounted has a concave portion 110 having a width X of about 0.3 mm near the center of the end portion, and corner portions (convex portions) 111 at both ends. Exists. It is desirable that the width X of the recess is slightly larger than the diameter of the dispenser 7 filling the translucent resin 5. The lead frame on the light receiving side is the same as that of the conventional FIG. 5 (B).
【００１３】以下本発明のフォトカプラを製造する方法
について説明する。まず発光側のリードフレーム10では
図1において斜線で示される領域に発光素子3が固着され
る。受光素子に関しては従来技術と同様である。Hereinafter, a method for manufacturing the photocoupler of the present invention will be described. First, in the lead frame 10 on the light emitting side, the light emitting element 3 is fixed to a region shown by oblique lines in FIG. The light receiving element is the same as in the related art.
【００１４】その後図2に示すように発光素子3が固着さ
れた発光側リードフレーム10および受光素子4が固着さ
れた受光側リードフレーム2を対向させ、この状態で発
光側リードフレーム10の斜め上方よりディスペンサ7を
用いて透光性樹脂5を充填することによって発光素子3お
よび受光素子4を連結する。Thereafter, as shown in FIG. 2, the light emitting side lead frame 10 to which the light emitting element 3 is fixed and the light receiving side lead frame 2 to which the light receiving element 4 is fixed are opposed to each other. The light emitting element 3 and the light receiving element 4 are connected by filling the translucent resin 5 with the dispenser 7.
【００１５】その後モールド封止材6によって全体を樹
脂封止し、リードフレームを最終的な形状に加工して本
発明のフォトカプラが作成される。Thereafter, the entire structure is resin-sealed with the mold sealing material 6, and the lead frame is processed into a final shape, thereby producing the photocoupler of the present invention.
【００１６】本発明によればフォトカプラを製造する工
程において、発光側のリードフレーム10のアイランド部
102に凹部110が設けられていることにより透光性樹脂5
を充填するディスペンサの位置が微妙にずれた場合で
も、透光性樹脂5は凹部110よりリードフレームの下面側
へと流れるため、リードフレームの上面に対して透光性
樹脂5が付着してしまうことはない。したがってリード
フレーム10とモールド樹脂6との密着性が向上する。According to the present invention, in the step of manufacturing the photocoupler, the island portion of the light emitting side lead frame 10 is used.
Since the concave portion 110 is provided in the light-transmitting resin 5
Even if the position of the dispenser for filling is slightly shifted, the light-transmitting resin 5 flows from the recess 110 to the lower surface side of the lead frame, so that the light-transmitting resin 5 adheres to the upper surface of the lead frame. Never. Therefore, the adhesion between the lead frame 10 and the mold resin 6 is improved.
【００１７】またリードフレーム10のアイランド部には
角部（凸部）111が存在するため、透光性樹脂5の持つ表
面張力の働きにより、透光性樹脂5を、この角部（凸
部）111の先端部分まで形成することが可能である。つ
まり角部（凸部）が存在することにより透光性樹脂5の
形状を偏りのない安定した形状で形成することが可能と
なり、光伝達特性も安定させることが可能となる。Since the corners (convex portions) 111 exist in the island portions of the lead frame 10, the surface tension of the translucent resin 5 causes the translucent resin 5 to move to the corners (convex portions). ) 111 can be formed up to the tip portion. That is, the presence of the corners (projections) enables the light-transmitting resin 5 to be formed in a stable shape without deviation, and light transmission characteristics to be stabilized.
【００１８】図3は本発明第2の実施の形態における発光
側のリードフレーム20を示す図である第2の実施の形態
ではリードフレームのアイランド部202に設けられる凹
部210の形状を円弧状としている。その他に関しては第1
の実施の形態と同様である。FIG. 3 is a view showing a light emitting side lead frame 20 according to a second embodiment of the present invention. In the second embodiment, the shape of the concave portion 210 provided in the island portion 202 of the lead frame is formed in an arc shape. I have. Others are first
This is the same as the embodiment.
【００１９】第2の実施の形態によれば凹部210の形状を
円弧状としているため第1の実施の形態と同様の効果に
加え、透光性樹脂5を充填する際、凹部210に直角な部分
が存在しなくなるため透光性樹脂5の表面張力が増し、
より安定した形状の透光性樹脂5が形成される。つまり
より安定した光伝達効率が得られる。According to the second embodiment, since the shape of the concave portion 210 is an arc shape, in addition to the same effect as in the first embodiment, when the translucent resin 5 is filled, Since the portion does not exist, the surface tension of the translucent resin 5 increases,
The translucent resin 5 having a more stable shape is formed. That is, more stable light transmission efficiency can be obtained.
【００２０】本発明は第1、第2の実施の形態に示された
形状の凹部に限定されるものではなく、同様の効果を有
する凹部形状であれば他の凹部形状でも可能である。The present invention is not limited to the concave portions having the shapes shown in the first and second embodiments, and any other concave shape having the same effect is possible.
【００２１】また第1、第2の実施の形態では発光側から
透光性樹脂を充填する例を示したが透光性樹脂は受光素
子側から充填することも可能である。In the first and second embodiments, an example is shown in which the translucent resin is filled from the light emitting side. However, the translucent resin can be filled from the light receiving element side.
【００２２】[0022]
【発明の効果】本発明によれば光半導体装置が固着され
るアイランド部に凹部を設けたことにより、リードフレ
ームとモールド樹脂との密着性が向上する。また安定し
た光伝達特性を得ることが出来る。According to the present invention, since the concave portion is provided in the island portion to which the optical semiconductor device is fixed, the adhesion between the lead frame and the mold resin is improved. In addition, stable light transmission characteristics can be obtained.
【図１】本発明の発光側リードフレームを示す図。FIG. 1 is a diagram showing a light emitting side lead frame of the present invention.
【図２】本発明のフォトカプラにおける透光性樹脂を充
填する様子を示す図。FIG. 2 is a diagram showing a state in which a translucent resin is filled in the photocoupler of the present invention.
【図３】本発明第2の実施の形態の発光側リードフレー
ムを示す図。FIG. 3 is a diagram showing a light emitting side lead frame according to a second embodiment of the present invention.
【図４】従来のフォトカプラの断面構造を示す図。FIG. 4 is a diagram showing a cross-sectional structure of a conventional photocoupler.
【図５】従来のフォトカプラのリードフレームを示す
図。FIG. 5 is a view showing a lead frame of a conventional photocoupler.
【図６】従来のフォトカプラにおける透光性樹脂を充填
する様子を示す図。FIG. 6 is a diagram showing a state where a translucent resin is filled in a conventional photocoupler.
1…従来の発光側リードフレーム 2…受光側リードフレーム 3…発光素子、4…受光素子、5…透光性樹脂、6…モール
ド樹脂 10、20…本発明の発光側リードフレーム1 ... Conventional light emitting side lead frame 2 ... Light receiving side lead frame 3 ... Light emitting element, 4 ... Light receiving element, 5 ... Translucent resin, 6 ... Mold resin 10, 20 ... Light emitting side lead frame of the present invention
Claims (4)
ランド部を有する第1のリードフレームと、 受光半導体素子が固着された第2のアイランド部を有す
る第2のリードフレームと、 前記発光半導体素子および受光半導体素子を対向させた
状態で連結する透光性樹脂と、 前記透光性樹脂を包囲する封止用部材とを有する光半導
体装置において、 前記第1のアイランド部および第2のアイランド部のいず
れか一方の端部に凹部を設けたことを特徴とする光半導
体装置。A first lead frame having a first island portion to which a light emitting semiconductor element is fixed; a second lead frame having a second island portion to which a light receiving semiconductor element is fixed; An optical semiconductor device comprising: a light-transmitting resin connecting the element and the light-receiving semiconductor element in an opposed state; and a sealing member surrounding the light-transmitting resin, wherein the first island portion and the second island An optical semiconductor device, wherein a concave portion is provided at any one end of the portion.
徴とする請求項1記載の光半導体装置。2. The optical semiconductor device according to claim 1, wherein the shape of the concave portion is an arc.
有する第1のリードフレームを準備する工程と、 第2のアイランド部を有する第2のリードフレームを準備
する工程と、 前記第1のアイランド部および第2のアイランド部の一方
に発光半導体素子を固着する工程と、 前記第1のアイランド部および第2のアイランド部の他方
に受光半導体素子を固着する工程と、 前記発光半導体素子および受光半導体素子を対向させた
状態で透光性樹脂を充填し前記発光半導体素子および受
光半導体素子を連結する工程と、 前記透光性樹脂を包囲する封止用部材を形成する工程と
を有することを特徴とする光半導体装置の製造方法。3. A step of preparing a first lead frame having a first island portion having a concave portion at an end, a step of preparing a second lead frame having a second island portion, Fixing a light-emitting semiconductor element to one of the island part and the second island part; fixing a light-receiving semiconductor element to the other of the first island part and the second island part; A step of filling the light-transmitting resin with the light-receiving semiconductor elements facing each other and connecting the light-emitting semiconductor element and the light-receiving semiconductor elements; and forming a sealing member surrounding the light-transmitting resin. A method for manufacturing an optical semiconductor device, comprising:
は、円弧状の凹部を持つ第1のアイランド部を有する第1
のリードフレームを準備する工程であることを特徴とす
る請求項3記載の光半導体装置の製造方法。4. A step of preparing a first lead frame includes a first island having a first island portion having an arc-shaped concave portion.
4. The method for manufacturing an optical semiconductor device according to claim 3, wherein said step is a step of preparing said lead frame.
Priority Applications (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10798897A JP3970377B2 (en) | 1997-04-25 | 1997-04-25 | Optical semiconductor device and manufacturing method thereof |
| US09/064,039 US6080999A (en) | 1997-04-25 | 1998-04-22 | Photosensitive semiconductor device |
| DE19818276A DE19818276C2 (en) | 1997-04-25 | 1998-04-23 | Photosensitive semiconductor device and manufacturing process therefor |
| US09/296,380 US6037187A (en) | 1997-04-25 | 1999-04-23 | Method of manufacturing photosensitive semiconductor device |
| US09/489,013 US6194238B1 (en) | 1997-04-25 | 2000-01-21 | Method of manufacturing photosensitive semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10798897A JP3970377B2 (en) | 1997-04-25 | 1997-04-25 | Optical semiconductor device and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10303453A true JPH10303453A (en) | 1998-11-13 |
| JP3970377B2 JP3970377B2 (en) | 2007-09-05 |
Family
ID=14473147
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10798897A Expired - Fee Related JP3970377B2 (en) | 1997-04-25 | 1997-04-25 | Optical semiconductor device and manufacturing method thereof |
Country Status (3)
| Country | Link |
|---|---|
| US (3) | US6080999A (en) |
| JP (1) | JP3970377B2 (en) |
| DE (1) | DE19818276C2 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MY122101A (en) * | 1997-03-28 | 2006-03-31 | Rohm Co Ltd | Lead frame and semiconductor device made by using it |
| JP3970377B2 (en) * | 1997-04-25 | 2007-09-05 | 沖電気工業株式会社 | Optical semiconductor device and manufacturing method thereof |
| JP4801243B2 (en) * | 2000-08-08 | 2011-10-26 | ルネサスエレクトロニクス株式会社 | Lead frame, semiconductor device manufactured using the same, and manufacturing method thereof |
| FI111033B (en) * | 2001-06-15 | 2003-05-15 | Metso Paper Inc | Method for determining the density of a roll |
| US7736293B2 (en) * | 2005-07-22 | 2010-06-15 | Biocompatibles Uk Limited | Implants for use in brachytherapy and other radiation therapy that resist migration and rotation |
| JP5278166B2 (en) * | 2009-05-28 | 2013-09-04 | セイコーエプソン株式会社 | Electronic device manufacturing method and electronic device |
| EP2581937B1 (en) * | 2010-06-11 | 2017-09-06 | Panasonic Intellectual Property Management Co., Ltd. | Resin-sealed semiconductor device and method for manufacturing same |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6195581A (en) * | 1984-10-16 | 1986-05-14 | Toshiba Corp | Photocoupler |
| JPS61228681A (en) * | 1985-04-01 | 1986-10-11 | Sharp Corp | Light coupling semiconductor device |
| US5148243A (en) * | 1985-06-25 | 1992-09-15 | Hewlett-Packard Company | Optical isolator with encapsulation |
| EP0276749A1 (en) * | 1987-01-26 | 1988-08-03 | Siemens Aktiengesellschaft | Optoelectronic coupling element |
| JP2656356B2 (en) * | 1989-09-13 | 1997-09-24 | 株式会社東芝 | Multi-mold semiconductor device and method of manufacturing the same |
| JP3242476B2 (en) * | 1992-06-29 | 2001-12-25 | 沖電気工業株式会社 | Optical semiconductor device |
| DE4311530A1 (en) * | 1992-10-02 | 1994-04-07 | Telefunken Microelectron | Optoelectronic component with a narrow opening angle |
| US5389578A (en) * | 1994-01-04 | 1995-02-14 | Texas Instruments Incorporated | Optical coupler |
| JP2600616B2 (en) * | 1994-09-08 | 1997-04-16 | 日本電気株式会社 | Optical coupling device |
| US5647034A (en) * | 1994-10-03 | 1997-07-08 | Matsushita Electric Works, Ltd. | Operation displaying semiconductor switch |
| JPH08222757A (en) * | 1995-02-14 | 1996-08-30 | Sharp Corp | Optical coupling element |
| JP3970377B2 (en) * | 1997-04-25 | 2007-09-05 | 沖電気工業株式会社 | Optical semiconductor device and manufacturing method thereof |
-
1997
- 1997-04-25 JP JP10798897A patent/JP3970377B2/en not_active Expired - Fee Related
-
1998
- 1998-04-22 US US09/064,039 patent/US6080999A/en not_active Expired - Fee Related
- 1998-04-23 DE DE19818276A patent/DE19818276C2/en not_active Expired - Fee Related
-
1999
- 1999-04-23 US US09/296,380 patent/US6037187A/en not_active Expired - Fee Related
-
2000
- 2000-01-21 US US09/489,013 patent/US6194238B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE19818276A1 (en) | 1998-10-29 |
| US6037187A (en) | 2000-03-14 |
| DE19818276C2 (en) | 2002-04-11 |
| JP3970377B2 (en) | 2007-09-05 |
| US6080999A (en) | 2000-06-27 |
| US6194238B1 (en) | 2001-02-27 |
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