JPH10293154A - Bias power source circuit for semiconductor testing device - Google Patents

Bias power source circuit for semiconductor testing device

Info

Publication number
JPH10293154A
JPH10293154A JP9116297A JP11629797A JPH10293154A JP H10293154 A JPH10293154 A JP H10293154A JP 9116297 A JP9116297 A JP 9116297A JP 11629797 A JP11629797 A JP 11629797A JP H10293154 A JPH10293154 A JP H10293154A
Authority
JP
Japan
Prior art keywords
power supply
capacitor
amplifier
bias power
test
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9116297A
Other languages
Japanese (ja)
Inventor
Takahiro Nagata
孝弘 永田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ando Electric Co Ltd
Original Assignee
Ando Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ando Electric Co Ltd filed Critical Ando Electric Co Ltd
Priority to JP9116297A priority Critical patent/JPH10293154A/en
Publication of JPH10293154A publication Critical patent/JPH10293154A/en
Pending legal-status Critical Current

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  • Tests Of Electronic Circuits (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a bias power source circuit which does not cause ringing nor oscillation when the level of a bias power source fluctuates even when a large-capacitance electrolytic capacitor for low frequency is connected to a device to be measured at the time of conducting AC tests on the device. SOLUTION: When AC tests are performed on a device 12 to be measured, an electrolytic capacitor 10 for low frequency is connected to the device 12 in addition to a by-pass capacitor 9 for high frequency by turning on a switch 11 and, at the same time, a capacitor 7 for a compensating phase is connected to the device 12 in addition to a capacitor 6 for compensating phase connected between the output terminal and inverted input terminal of an amplifier 1 by turning on a switch 8. In this case, the occurrence of ringing or oscillation is suppressed when the level of a bias power source fluctuates by making the resultant capacitance of the capacitors 6 and 7 for compensating phase the optimum when the by-pass capacitor 9 and electrolytic capacitor 10 are connected to the device 12.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】この発明は、ICテスタによ
り大負荷電流をとるような被測定デバイス(以下、DU
Tという)の直流試験時と交流試験時とでDUTに電源
電流を供給する増幅器の出力端側に接続されている容量
負荷が変化しても、ICテスタのバイアス電源レベルの
変動時にリンギングや発振の発生を抑制する半導体試験
装置用バイアス電源回路に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a device to be measured (hereinafter referred to as a DU) in which a large load current is taken by an IC tester.
T) during DC and AC tests, even if the capacitive load connected to the output end of the amplifier that supplies the power supply current to the DUT changes, the ringing or oscillation occurs when the bias power supply level of the IC tester changes. The present invention relates to a bias power supply circuit for a semiconductor test device that suppresses the generation of a bias.

【0002】[0002]

【従来の技術】ICテスタで被試験デバイスの直流試験
や交流試験を行う場合に、半導体試験用バイアス電源回
路が使用されており、この半導体試験用バイアス電源回
路はICテスタからDUTに電源電流を供給するための
増幅器の出力端をDUTの電源ピンに接続し、ICテス
タのバイアス電源レベルを安定させるために、この電源
ピンに高周波用バイパスコンデンサと、低周波用コンデ
ンサとして大容量の電解コンデンサとが接続されてい
る。
2. Description of the Related Art When a DC test or an AC test of a device under test is performed by an IC tester, a bias power supply circuit for semiconductor test is used. The bias power supply circuit for semiconductor test supplies a power supply current from the IC tester to a DUT. The output terminal of the amplifier to be supplied is connected to the power supply pin of the DUT. To stabilize the bias power level of the IC tester, a high-frequency bypass capacitor and a large-capacity electrolytic capacitor as a low-frequency capacitor are connected to this power supply pin. Is connected.

【0003】しかし、DUTの直流試験を行う場合に
は、より高精度に試験を行う必要があり、リーク電流の
多い電解コンデンサを電源ピンから切り離すために、電
解コンデンサと電源ピンとの間にスイッチを挿入し、こ
のスイッチをオフにすることにより電解コンデンサを電
源ピンから切り離すようにしている。
However, when performing a DC test of the DUT, it is necessary to perform the test with higher accuracy. In order to disconnect the electrolytic capacitor having a large leak current from the power supply pin, a switch is provided between the electrolytic capacitor and the power supply pin. By inserting and turning off this switch, the electrolytic capacitor is disconnected from the power supply pin.

【0004】また、電源レベルの変動時のリンギングま
たは発振を防止するために、増幅器の出力端と反転入力
端(ICテスタからの電源入力端)との間には、位相補
償用コンデンサを接続している。
Further, in order to prevent ringing or oscillation when the power supply level fluctuates, a phase compensation capacitor is connected between the output terminal of the amplifier and the inverting input terminal (the power supply input terminal from the IC tester). ing.

【0005】図2は従来の半導体試験用バイアス電源回
路の構成を示す回路図である。図2で、増幅器1はDU
T12に図示しないICテスタから電源電流を供給する
ためのものであり、その反転入力端は、入力抵抗3を介
して入力端子2に接続されている。入力端子2はICテ
スタからの電源電圧を増幅器1に供給するための入力端
子である。増幅器1の出力端は電流検出抵抗5を介して
DUT12の電源ピン12aに接続されている。
FIG. 2 is a circuit diagram showing a configuration of a conventional bias power supply circuit for semiconductor test. In FIG. 2, the amplifier 1 is a DU
The power supply current is supplied from an IC tester (not shown) to T12, and its inverting input terminal is connected to the input terminal 2 via the input resistor 3. The input terminal 2 is an input terminal for supplying a power supply voltage from the IC tester to the amplifier 1. The output terminal of the amplifier 1 is connected to the power supply pin 12a of the DUT 12 via the current detection resistor 5.

【0006】電源ピン12aと増幅器1の反転入力端と
の間には、帰還抵抗4が接続されている。電源ピン12
aとアース間には、ICテスタのバイアス電源レベルを
安定させるための高周波用バイアスコンデンサ9が接続
されているとともに、スイッチ11と大容量の低周波用
電解コンデンサ10との直列回路が接続されている。さ
らに、増幅器1の反転入力端と出力端との間には、位相
補償用コンデンサ6が接続されている。
A feedback resistor 4 is connected between the power supply pin 12a and the inverting input terminal of the amplifier 1. Power supply pin 12
A high-frequency bias capacitor 9 for stabilizing the bias power supply level of the IC tester is connected between a and ground, and a series circuit of a switch 11 and a large-capacity low-frequency electrolytic capacitor 10 is connected. I have. Further, a phase compensation capacitor 6 is connected between the inverting input terminal and the output terminal of the amplifier 1.

【0007】次に、図2の半導体試験用バイアス電源回
路の動作について、まずDUT12の直流試験を行う場
合から説明する。直流試験時には、ICテスタから入力
端子2と入力抵抗3を経て増幅器1の反転入力端に電源
電圧を供給することにより、増幅器1から電流検出抵抗
5を通してDUT12の電源ピン12aに電源電流を供
給する。
Next, the operation of the semiconductor test bias power supply circuit shown in FIG. In the DC test, a power supply voltage is supplied from the IC tester to the inverting input terminal of the amplifier 1 via the input terminal 2 and the input resistor 3, thereby supplying a power supply current from the amplifier 1 to the power supply pin 12 a of the DUT 12 through the current detection resistor 5. .

【0008】このときの電源電流が電流検出抵抗5に流
れ、その両端間に電圧降下が生じ、両端間の電位差を測
定しているが、このとき、リーク電流をなくして高精度
な測定を行うために、スイッチ11をオフにしておき、
低周波用電解コンデンサ10が非接続状態にしておく。
これにより、低周波用電解コンデンサ10に電流が流れ
なくなり、高精度な電源電流が測定できる。
At this time, the power supply current flows through the current detecting resistor 5, and a voltage drop occurs between both ends of the resistor, and the potential difference between both ends is measured. At this time, a leak current is eliminated and high-precision measurement is performed. To turn off switch 11,
The low-frequency electrolytic capacitor 10 is kept disconnected.
As a result, no current flows through the low-frequency electrolytic capacitor 10, and a highly accurate power supply current can be measured.

【0009】次に、DUT12の交流試験を行う場合に
は、DUT12の負荷電流によるICテスタのバイアス
電源のレベル変動を抑制するたに、今度はスイッチ11
をオンにして低周波用電解コンデンサ10を電源ピン1
2aに接続しておく。この状態でICテスタから電源電
圧を入力端子2、入力抵抗3を経て増幅器1に供給し、
さらに増幅器1から電流検出抵抗5を通してDUT12
の電源ピン12aに電源電流を供給する。
Next, when an AC test of the DUT 12 is performed, the level of the bias power supply of the IC tester due to the load current of the DUT 12 is suppressed.
Is turned on and the low frequency electrolytic capacitor 10 is connected to the power pin 1
2a. In this state, the power supply voltage is supplied from the IC tester to the amplifier 1 via the input terminal 2 and the input resistor 3, and
Further, the DUT 12 passes through the current detection resistor 5 from the amplifier 1.
A power supply current is supplied to the power supply pin 12a.

【0010】この際、電源ピン12aとアース間には低
周波用電解コンデンサ10と高周波用バイパスコンデン
サ9との合成容量が接続されたことになり、DUT12
の負荷電流によるICテスタのバイアス電源のレベル変
動が抑制されることになる。
At this time, the combined capacitance of the low-frequency electrolytic capacitor 10 and the high-frequency bypass capacitor 9 is connected between the power supply pin 12a and the ground.
The fluctuation in the level of the bias power supply of the IC tester due to the load current is suppressed.

【0011】[0011]

【発明が解決しようとする課題】しかし、図2に示すよ
うな従来の半導体試験用バイアス電源回路では、増幅器
1の出力端と反転入力端との間に接続されている位相補
償用コンデンサ6は高周波用バイパスコンデンサ9の容
量接続時に適切な値となるように選定されているので、
DUT12の交流試験時の低周波用電解コンデンサ10
のような大容量負荷が接続されたときには、バイアス電
源レベルの変動時にリンギングまたは発振が発生すると
いう課題があった。
However, in the conventional bias power supply circuit for semiconductor testing as shown in FIG. 2, the phase compensating capacitor 6 connected between the output terminal and the inverting input terminal of the amplifier 1 is not connected. Since it is selected to be an appropriate value when the capacitance of the high frequency bypass capacitor 9 is connected,
Low frequency electrolytic capacitor 10 during AC test of DUT 12
When a large-capacity load like this is connected, there is a problem that ringing or oscillation occurs when the bias power supply level fluctuates.

【0012】この発明は、DUTの交流試験時に大容量
の低周波用電解コンデンサをDUTの電源ピンに接続し
ても、バイアス電源レベルの変動時にリンギングまたは
発振が発生しない半導体試験装置用バイアス電源回路を
提供することを目的とする。
The present invention provides a bias power supply circuit for a semiconductor test apparatus in which ringing or oscillation does not occur when a bias power supply level changes even if a large-capacity low-frequency electrolytic capacitor is connected to a power supply pin of the DUT during an AC test of the DUT. The purpose is to provide.

【0013】[0013]

【課題を解決するための手段】この目的を達成するため
に、この発明の半導体試験装置用バイアス電源回路は、
出力電圧を決定する電圧を反転入力端子に入力抵抗3を
介して入力し、被測定デバイス12に電源電流を供給す
る増幅器1と、増幅器1の反転入力端子と被測定デバイ
ス12の電源ピンとの間に接続された帰還抵抗4と、増
幅器1の出力端子と被測定デバイス12の電源ピンとの
間に接続された電流検出抵抗5と、増幅器1の反転入力
端子と出力端子との間に接続された位相補償用コンデン
サ6と、被測定デバイス12の直流試験時にオフとな
り、かつ交流試験時にオンとなるスイッチ8を介して増
幅器1の反転入力端子と出力端子との間に接続された位
相補償用コンデンサ7と、被測定デバイス12の電源ピ
ンに接続された高周波用バイパスコンデンサ9と、被測
定デバイス12の直流試験時にオフとなり、かつ交流試
験時にオンとなるスイッチ11を介して被測定デバイス
12の電源ピンに接続された低周波用電界コンデンサ1
0とを備える。
In order to achieve this object, a bias power supply circuit for a semiconductor test apparatus according to the present invention comprises:
An amplifier 1 for inputting a voltage for determining an output voltage to the inverting input terminal via the input resistor 3 and supplying a power supply current to the device under test 12, and between the inverting input terminal of the amplifier 1 and the power supply pin of the device under test 12 , A current detection resistor 5 connected between the output terminal of the amplifier 1 and the power supply pin of the device under test 12, and a feedback resistor 4 connected between the inverting input terminal and the output terminal of the amplifier 1. Phase compensating capacitor 6 and a phase compensating capacitor connected between an inverting input terminal and an output terminal of amplifier 1 via switch 8 which is turned off during a DC test of device under test 12 and turned on during an AC test. 7, a high-frequency bypass capacitor 9 connected to the power supply pin of the device under test 12, and a switch that is turned off during the DC test of the device under test 12 and turned on during the AC test. Low-frequency electric field capacitor through a pitch 11 which is connected to the power pins of the device under test 12 1
0.

【0014】[0014]

【発明の実施の形態】次に、この発明の半導体試験装置
用バイアス電源回路の実施の形態について図面を参照し
て説明する。図1はこの発明の第1の実施の形態の構成
を示すブロック図である。図1において、構成の説明に
際して、説明の簡略化のために図2と同一部分には同一
符号を付してその重複説明を避け、図2とは異なる部分
を主体に述べる。
Next, an embodiment of a bias power supply circuit for a semiconductor test apparatus according to the present invention will be described with reference to the drawings. FIG. 1 is a block diagram showing the configuration of the first embodiment of the present invention. 1. In FIG. 1, the same components as those in FIG. 2 are denoted by the same reference numerals for the sake of simplicity, to avoid repeated description, and mainly different portions from FIG.

【0015】図1を図2と比較しても明かなように、図
1では増幅器1の出力端と反転入力端との間に第1の位
相補償用コンデンサ6が接続されているとともに、スイ
ッチ8と位相補償用コンデンサ7との直列回路が接続さ
れている。その他の構成は、図2と同様であるが、図1
の実施の形態では、第1のスイッチ8が付加されたこと
により、説明の都合上スイッチ11をスイッチ11と称
することにする。
As is clear from the comparison of FIG. 1 with FIG. 2, in FIG. 1, a first phase compensating capacitor 6 is connected between the output terminal and the inverting input terminal of the amplifier 1 and a switch is provided. 8 and a series circuit of a phase compensation capacitor 7 are connected. Other configurations are the same as those in FIG.
In the embodiment, the switch 11 is referred to as a switch 11 for convenience of description because the first switch 8 is added.

【0016】次に、以上のように構成されたこの実施の
形態の動作について説明する。DUT12の直流試験時
には、スイッチ8とスイッチ11はともにオフにしてお
く。スイッチ8とスイッチ11がオフであるから、第2
の位相補償用コンデンサ7と、低周波用電解コンデンサ
10がそれぞれ非接続状態になっており、したがって、
DUT12の電源ピン12aには、高周波用バイパスコ
ンデンサ9のみが接続されている。
Next, the operation of this embodiment configured as described above will be described. During the DC test of the DUT 12, both the switch 8 and the switch 11 are turned off. Since the switches 8 and 11 are off, the second
Of the phase compensation capacitor 7 and the electrolytic capacitor 10 for low frequency are not connected to each other.
Only the high frequency bypass capacitor 9 is connected to the power supply pin 12a of the DUT 12.

【0017】この状態で、入力端子2から入力抵抗3を
経てICテスタから電源電流が増幅器1に供給され、さ
らに増幅器1から電流検出抵抗5を通してDUT12の
電源ピン12aに電源電流が供給される。
In this state, a power supply current is supplied from the input terminal 2 via the input resistor 3 to the amplifier 1 from the IC tester, and a power supply current is supplied from the amplifier 1 to the power supply pin 12a of the DUT 12 through the current detection resistor 5.

【0018】このとき、電流検出抵抗5に電圧降下が生
じ、この電流検出抵抗5の両端の電位差を測定してお
り、この電位差の測定を高精度に行うために、前述のよ
うにスイッチ8とスイッチ11をオフにしているので、
位相補償用コンデンサ7と低周波用電解コンデンサ10
が非接続状態であり、高周波用バイパスコンデンサ9の
みが接続されており、リーク電流が排除される。
At this time, a voltage drop occurs in the current detection resistor 5, and the potential difference between both ends of the current detection resistor 5 is measured. In order to measure this potential difference with high accuracy, the switch 8 and the switch 8 are connected as described above. Since switch 11 is off,
Phase compensation capacitor 7 and low frequency electrolytic capacitor 10
Are not connected, only the high-frequency bypass capacitor 9 is connected, and leakage current is eliminated.

【0018】この高周波用バイパスコンデンサ9のみが
接続された条件時に位相補償用コンデンサ6の容量値が
最適となるように、位相補償用コンデンサ6の容量値が
選定されている。
The capacitance value of the phase compensating capacitor 6 is selected so that the capacitance value of the phase compensating capacitor 6 becomes optimum when only the high-frequency bypass capacitor 9 is connected.

【0019】次に、DUT12の交流試験を行う場合に
ついて説明する。この場合には、DUT12の負荷電流
によるバイアス電源のレベル変動を抑制するためにスイ
ッチ11をオンにして、低周波用電解コンデンサ10を
DUT12の電源ピン12aに接続状態にする。
Next, a case where an AC test of the DUT 12 is performed will be described. In this case, the switch 11 is turned on to suppress the level change of the bias power supply due to the load current of the DUT 12, and the low-frequency electrolytic capacitor 10 is connected to the power supply pin 12a of the DUT 12.

【0020】これにより、電源ピン12aには、高周波
用バイパスコンデンサ9と大容量の低周波用電解コンデ
ンサ10との合成容量が接続されることになり、DUT
12の負荷電流によりバイアス電源のレベル変動が生
じ、リンギングまたは発振を発生しようとするが、この
実施の形態では、スイッチ11のオンと同時にスイッチ
8もオンにしている。
As a result, the combined capacitance of the high-frequency bypass capacitor 9 and the large-capacity low-frequency electrolytic capacitor 10 is connected to the power supply pin 12a.
Although the level variation of the bias power supply is caused by the load current 12 and ringing or oscillation is generated, in this embodiment, the switch 8 is turned on simultaneously with the switch 11 being turned on.

【0021】したがって、位相補償用コンデンサ7も増
幅器1の出力端と反転入力端との間に接続されることに
なり、増幅器1の出力端と反転入力端間には位相補償用
コンデンサ6と位相補償用コンデンサ7との合成容量が
加わったことになる。
Therefore, the phase compensating capacitor 7 is also connected between the output terminal of the amplifier 1 and the inverting input terminal, and the phase compensating capacitor 6 is connected between the output terminal of the amplifier 1 and the inverting input terminal. This means that the combined capacitance with the compensation capacitor 7 has been added.

【0022】位相補償用コンデンサ6と位相補償用コン
デンサ7との合成容量値が高周波用バイパスコンデンサ
9と低周波用電解コンデンサ10とが接続された条件時
に最適となるように選定することにより、DUT12の
交流試験時のバイアス電源のレベル変動時にリンギング
または発振が発生しなくなる。
By selecting the combined capacitance value of the phase compensating capacitor 6 and the phase compensating capacitor 7 to be optimum under the condition where the high frequency bypass capacitor 9 and the low frequency electrolytic capacitor 10 are connected, the DUT 12 Ringing or oscillation does not occur when the level of the bias power supply fluctuates during the AC test.

【0023】[0023]

【発明の効果】この発明の半導体試験装置用バイアス電
源回路によれば、DUTの交流試験時に大容量の低周波
用電解コンデンサをDUTの電源ピンに高周波用バイパ
スコンデンサとともに接続状態にするとともに、増幅器
の出力端と反転入力端との間に第1と第2の位相補償用
コンデンサを接続してその合成容量値が高周波用バイパ
スコンデンサと低周波用電解コンデンサとの接続条件時
に最適となるような値とするようにしたので、バイアス
電源レベルの変動時にリンギングまたは発振が発生しな
い状態でDUTの交流試験を行うことができる。
According to the bias power supply circuit for a semiconductor test apparatus of the present invention, a large-capacity low-frequency electrolytic capacitor is connected to a power supply pin of the DUT together with a high-frequency bypass capacitor during an AC test of the DUT, and an amplifier is connected to the power supply pin. The first and second phase compensation capacitors are connected between the output terminal and the inverting input terminal so that the combined capacitance value thereof becomes optimal under the connection condition between the high frequency bypass capacitor and the low frequency electrolytic capacitor. Since the value is set to a value, an AC test of the DUT can be performed in a state where ringing or oscillation does not occur when the bias power supply level changes.

【図面の簡単な説明】[Brief description of the drawings]

【図1】この発明の半導体試験装置用バイアス電源回路
一実施の形態の構成を示す回路図である。
FIG. 1 is a circuit diagram showing a configuration of a bias power supply circuit for a semiconductor test apparatus according to an embodiment of the present invention.

【図2】従来の半導体試験装置用バイアス電源回路の構
成を示す回路図である。
FIG. 2 is a circuit diagram showing a configuration of a conventional bias power supply circuit for a semiconductor test device.

【符号の説明】[Explanation of symbols]

1 増幅器 2 入力端子 3 入力抵抗 4 帰還抵抗 5 電流検出抵抗 6 位相補償用コンデンサ 7 位相舗装用コンデンサ 8 スイッチ 9 高周波用バイパスコンデンサ 10 低周波用電解コンデンサ 11 スイッチ 12 DUT 12a 電源ピン DESCRIPTION OF SYMBOLS 1 Amplifier 2 Input terminal 3 Input resistance 4 Feedback resistance 5 Current detection resistance 6 Phase compensation capacitor 7 Phase paving capacitor 8 Switch 9 High frequency bypass capacitor 10 Low frequency electrolytic capacitor 11 Switch 12 DUT 12a Power supply pin

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 出力電圧を決定する電圧を反転入力端子
に入力抵抗(3) を介して入力し、被測定デバイス(12)に
電源電流を供給する増幅器(1) と、 前記増幅器(1) の反転入力端子と前記被測定デバイス(1
2)の電源ピンとの間に接続された帰還抵抗(4) と、 前記増幅器(1) の出力端子と前記被測定デバイス(12)の
電源ピンとの間に接続された電流検出抵抗(5) と、 前記増幅器(1) の反転入力端子と出力端子との間に接続
された第1の位相補償用コンデンサ(6) と、 前記被測定デバイス(12)の直流試験時にオフとなり、か
つ交流試験時にオンとなる第1のスイッチ(8) を介して
前記増幅器(1) の反転入力端子と出力端子との間に接続
された第2の位相補償用コンデンサ(7) と、 前記被測定デバイス(12)の電源ピンに接続された高周波
用バイパスコンデンサ(9) と、 前記被測定デバイス(12)の直流試験時にオフとなり、か
つ交流試験時にオンとなる第2のスイッチ(11)を介して
前記被測定デバイス(12)の電源ピンに接続された低周波
用電界コンデンサ(10)と、を備えることを特徴とする半
導体試験装置用バイアス電源回路。
An amplifier (1) for inputting a voltage for determining an output voltage to an inverting input terminal via an input resistor (3) and supplying a power supply current to a device under test (12); Of the device under test (1
A feedback resistor (4) connected between the power supply pin of (2), and a current detection resistor (5) connected between the output terminal of the amplifier (1) and the power supply pin of the device under test (12). A first phase compensation capacitor (6) connected between the inverting input terminal and the output terminal of the amplifier (1); and A second phase compensation capacitor (7) connected between an inverting input terminal and an output terminal of the amplifier (1) via a first switch (8) that is turned on; ) And a second switch (11) that is turned off during a DC test and turned on during an AC test of the device under test (12). A low frequency electric field capacitor (10) connected to the power supply pin of the measuring device (12). Bias supply circuit for a semiconductor test apparatus according to claim.
JP9116297A 1997-04-18 1997-04-18 Bias power source circuit for semiconductor testing device Pending JPH10293154A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9116297A JPH10293154A (en) 1997-04-18 1997-04-18 Bias power source circuit for semiconductor testing device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9116297A JPH10293154A (en) 1997-04-18 1997-04-18 Bias power source circuit for semiconductor testing device

Publications (1)

Publication Number Publication Date
JPH10293154A true JPH10293154A (en) 1998-11-04

Family

ID=14683547

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9116297A Pending JPH10293154A (en) 1997-04-18 1997-04-18 Bias power source circuit for semiconductor testing device

Country Status (1)

Country Link
JP (1) JPH10293154A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006035654A1 (en) * 2004-09-30 2006-04-06 Advantest Corporation Power supply apparatus and testing apparatus
WO2011010409A1 (en) * 2009-07-23 2011-01-27 株式会社アドバンテスト Test apparatus, additional circuit, and board for testing
US8558559B2 (en) 2009-07-23 2013-10-15 Advantest Corporation Test apparatus, additional circuit and test board for calculating load current of a device under test
JP2016066862A (en) * 2014-09-24 2016-04-28 株式会社デンソー Semiconductor device

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006035654A1 (en) * 2004-09-30 2006-04-06 Advantest Corporation Power supply apparatus and testing apparatus
WO2011010409A1 (en) * 2009-07-23 2011-01-27 株式会社アドバンテスト Test apparatus, additional circuit, and board for testing
JPWO2011010409A1 (en) * 2009-07-23 2012-12-27 株式会社アドバンテスト Test equipment, additional circuit and test board
US8558559B2 (en) 2009-07-23 2013-10-15 Advantest Corporation Test apparatus, additional circuit and test board for calculating load current of a device under test
JP2016066862A (en) * 2014-09-24 2016-04-28 株式会社デンソー Semiconductor device

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