JPH10273592A - Composition having excellent thermal conductivity and metal-base printed circuit board - Google Patents

Composition having excellent thermal conductivity and metal-base printed circuit board

Info

Publication number
JPH10273592A
JPH10273592A JP7857297A JP7857297A JPH10273592A JP H10273592 A JPH10273592 A JP H10273592A JP 7857297 A JP7857297 A JP 7857297A JP 7857297 A JP7857297 A JP 7857297A JP H10273592 A JPH10273592 A JP H10273592A
Authority
JP
Japan
Prior art keywords
thermal conductivity
metal
polyimide
printed circuit
circuit board
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7857297A
Other languages
Japanese (ja)
Other versions
JP3551687B2 (en
Inventor
Tatsuo Tsumiyama
龍男 積山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ube Corp
Original Assignee
Ube Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ube Industries Ltd filed Critical Ube Industries Ltd
Priority to JP7857297A priority Critical patent/JP3551687B2/en
Publication of JPH10273592A publication Critical patent/JPH10273592A/en
Priority to US10/454,730 priority patent/US6797392B2/en
Application granted granted Critical
Publication of JP3551687B2 publication Critical patent/JP3551687B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0313Organic insulating material
    • H05K1/032Organic insulating material consisting of one material
    • H05K1/0346Organic insulating material consisting of one material containing N
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/0313Organic insulating material
    • H05K1/0353Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
    • H05K1/0373Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement containing additives, e.g. fillers
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/03Use of materials for the substrate
    • H05K1/05Insulated conductive substrates, e.g. insulated metal substrate
    • H05K1/056Insulated conductive substrates, e.g. insulated metal substrate the metal substrate being covered by an organic insulating layer

Landscapes

  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Laminated Bodies (AREA)
  • Compositions Of Macromolecular Compounds (AREA)

Abstract

PROBLEM TO BE SOLVED: To obtain an electrically insulating polyimide composition showing good adhesion to metallic foils upon thermocompression bonding and having excellent thermal conductivity by mixing a noncrystalline heat-fusible aromatic polyimide with a filler effective to improve thermal conductivity and to obtain a metal-base printed circuit board excellent in thermal conductivity. SOLUTION: 5-50 wt.% noncrystalline heat-fusible aromatic polyimide is mixed with 50-95 wt.% filler effective to improve thermal conductivity to obtain an electrically insulating polyimide composition excellent in thermal conductivity. The aromatic polyimide is desirably one obtained by imidating a polymer obtained from 2,3,3',4'-biphenyltetracarboxylic acid or an ester or dianhydride thereof and an aromatic diamine having at least one ether bond and at least two phenyl groups bonded through the ether group in the main chain. A copper foil for a circuit and a metallic foil for a base board is bonded with this composition to obtain a metal-base printed circuit board.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】この発明は、電子工業分野に
おいて普及しつつある、金属ベ−スプリント基板などに
好適な熱伝導性の優れた電気絶縁性ポリイミド組成物及
び熱伝導性に優れた金属ベ−スプリント基板に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrically insulating polyimide composition having excellent thermal conductivity suitable for a metal-based printed circuit board and the like, and a metal package having excellent thermal conductivity, which is becoming popular in the field of electronics. A splint substrate;

【0002】[0002]

【従来の技術】ポリイミド金属ベ−スプリント基板は、
主としてプリント配線基板用の基材として使用されてい
る。近年においてプリント配線基板を使用した電子機器
が小型化、高密度化されるに伴い、部品・素子の高密度
実装が可能なポリイミド金属箔積層板の利用が増大して
いる。更に、高密度実装に伴い、部品・素子に発生する
熱の放熱性を高めるために、熱伝導性の優れたポリイミ
ド系金属ベ−スプリント基板の要望が高まっている。こ
の放熱性を高めるために金属層にアルミニウム板などの
熱伝導率の高い金属ベ−ス板を使用する試みがなされて
いる。しかしながら二層の金属箔の層間に熱伝導率の低
いポリイミド層を絶縁層として使用しているため、ポリ
イミド層の伝熱抵抗により放熱性は効率の良いものでは
なかった。
2. Description of the Related Art A polyimide metal-based printed circuit board is
It is mainly used as a substrate for printed wiring boards. 2. Description of the Related Art In recent years, as electronic devices using printed wiring boards have been reduced in size and density, the use of polyimide metal foil laminates capable of high-density mounting of components and elements has been increasing. Further, with high-density mounting, there is an increasing demand for a polyimide-based metal-based printed circuit board having excellent heat conductivity in order to enhance the heat dissipation of heat generated in components and elements. Attempts have been made to use a metal base plate having a high thermal conductivity, such as an aluminum plate, for the metal layer in order to enhance the heat dissipation. However, since a polyimide layer having low thermal conductivity is used as an insulating layer between the two metal foil layers, heat dissipation is not efficient due to the heat transfer resistance of the polyimide layer.

【0003】一方、ポリイミド層に熱伝導性のよいフィ
ラ−を充填したポリイミド層を使用する検討もなされて
いる。しかしながら、このようなフィラ−を充填したポ
リイミドは金属箔との接着性が悪いために、ポリイミド
層と金属箔層とをエポキシ樹脂などの接着剤を用いて貼
り合わせる方法がとれれていた。このようにして製造さ
れた金属ベ−スプリント基板は耐熱性、耐薬品性、電気
的特性は使用される接着剤の特性に支配され、ポリイミ
ドの特性が十分に活かされず、特に耐熱性の点で十分な
ものではなかった。
On the other hand, studies have been made to use a polyimide layer filled with a filler having good thermal conductivity in the polyimide layer. However, polyimide filled with such a filler has poor adhesion to a metal foil, so that a method of bonding a polyimide layer and a metal foil layer using an adhesive such as an epoxy resin has been adopted. The heat resistance, chemical resistance, and electrical properties of the metal-based printed circuit board manufactured in this manner are governed by the properties of the adhesive used, and the properties of polyimide are not sufficiently utilized. It was not enough.

【0004】この接着剤を有する従来の金属ベ−スプリ
ント基板の欠点を克服するために、金属箔上にポリイミ
ド溶液またはポリイミド前駆体であるポリアミド酸溶液
を直接流延塗布することにより、通常の接着剤層を有し
ない、絶縁層が全てポリイミド層からなる金属ベ−スプ
リント基板を得ようとする試みがなされている。また、
ポリイミドフィルムの片面または両面に接着性を有する
ポリイミド前駆体を積層し、このポリイミド前駆体を金
属箔とを重ね合わせ加熱圧着して、同様な絶縁層が全て
ポリイミド層からなる金属ベ−スプリント基板を得よう
とする試みもなされている。さらに、ポリイミドフィル
ムの両面に熱可塑性ポリイミドを積層し、このポリイミ
ド前駆体を金属箔と加熱圧着する方法も試みられてい
る。
In order to overcome the drawbacks of the conventional metal-based printed circuit board having this adhesive, a conventional adhesive solution is prepared by directly casting a polyimide solution or a polyamic acid solution as a polyimide precursor on a metal foil. Attempts have been made to obtain a metal-based printed circuit board having no agent layer and all insulating layers consisting of a polyimide layer. Also,
A polyimide precursor having an adhesive property is laminated on one or both sides of a polyimide film, and the polyimide precursor is laminated on a metal foil and heat-pressed to form a metal-based printed circuit board in which the same insulating layer is entirely made of a polyimide layer. Attempts have been made to get it. Further, a method of laminating a thermoplastic polyimide on both surfaces of a polyimide film and heat-pressing the polyimide precursor to a metal foil has also been attempted.

【0005】しかしながら、これらの方法では、本発明
のようにフィラ−を充填したポリイミド層を形成する場
合には接着性が認められず、接着剤を使用する方法しか
実用的でなかった。
However, in these methods, when a polyimide layer filled with a filler is formed as in the present invention, no adhesive property is recognized, and only a method using an adhesive is practical.

【0006】[0006]

【発明が解決しようとする課題】この発明の目的は、金
属ベ−スプリント基板の需要が拡大するに伴い、熱伝導
性に優れたポリイミド層を絶縁層とした金属ベ−スプリ
ント基板の要望が高まってきており、この要望に対し
て、加熱圧着により金属箔との接着性が良好で、熱伝導
性の優れた電気絶縁性ポリイミド組成物、及び熱伝導性
の優れた金属ベ−スプリント基板を提供することであ
る。
SUMMARY OF THE INVENTION An object of the present invention is to increase the demand for a metal-based printed circuit board as the demand for the metal-based printed circuit board increases, and a demand for a metal-based printed circuit board using a polyimide layer having excellent thermal conductivity as an insulating layer. In response to this demand, an electrically insulating polyimide composition having good adhesion to a metal foil by heat-pressing and having excellent heat conductivity, and a metal-based printed board having excellent heat conductivity have been provided. It is to be.

【0007】[0007]

【課題を解決するための手段】この発明者は鋭意検討し
た結果、特定のポリイミドを使用することによって、熱
伝導性が高く、絶縁性に優れた無機フィラ−を充填して
も金属箔との接着を加熱圧着によって容易に成しえるこ
とを見い出し、本発明を完成した。
As a result of intensive studies, the present inventor has found that by using a specific polyimide, even if an inorganic filler having a high thermal conductivity and an excellent insulating property is filled, the use of a specific polyimide can be improved. The present inventors have found that bonding can be easily achieved by thermocompression bonding, and have completed the present invention.

【0008】すなわち、この発明は、非結晶性で熱融着
性の芳香族ポリイミドに、熱伝導性の向上に有効な充填
材を含有してなる熱伝導性の優れた電気絶縁性ポリイミ
ド組成物に関する。
That is, the present invention provides an electrically insulating polyimide composition having excellent thermal conductivity, comprising a non-crystalline, heat-fusible aromatic polyimide and a filler effective for improving thermal conductivity. About.

【0009】また、この発明は、非結晶性で熱融着性の
芳香族ポリイミドに、熱伝導性の向上に有効な充填材を
含有してなる熱伝導性の優れた電気絶縁性ポリイミド組
成物からなる絶縁膜によって二層の金属箔を接合してな
る熱伝導性に優れた金属ベ−スプリント基板に関する。
The present invention also provides an electrically insulating polyimide composition having excellent thermal conductivity, comprising a non-crystalline, heat-fusible aromatic polyimide and a filler effective for improving thermal conductivity. The present invention relates to a metal-based printed circuit board having excellent thermal conductivity formed by joining two layers of metal foils with an insulating film made of the same.

【0010】この発明においては前記の非結晶性で熱融
着性の芳香族ポリイミドを使用することが必要である。
非結晶性とはX線回折スペクトルについてル−ランド法
による解析で実質的に結晶性が認められないもの、好適
には結晶化度が5%未満、特に3%以下のもの、その中
でも特に1%以下のものが好適である。非結晶性で熱融
着性ではないポリイミドを使用すると、熱伝導性の向上
に有効な充填材を含有させた電気絶縁性ポリイミド組成
物が粉末化し絶縁膜を形成することが困難になる。
In the present invention, it is necessary to use the above-mentioned non-crystalline and heat-fusible aromatic polyimide.
Non-crystalline refers to those in which substantially no crystallinity is observed in the X-ray diffraction spectrum by the Leuland method, preferably those having a crystallinity of less than 5%, particularly 3% or less, and especially 1 % Or less is preferred. When a non-crystalline and non-heat-fusible polyimide is used, it becomes difficult to form an insulating film by powdering an electrically insulating polyimide composition containing a filler effective for improving thermal conductivity.

【0011】前記の非結晶性で熱融着性の芳香族ポリイ
ミドに使用することができるテトラカルボン酸二無水物
類(酸、酸二無水物、酸エステル)としては、2,3,
3’,4’−ビフェニルテトラカルボン酸二無水物類が
最も好ましいが、2,2−ビス(3、4−ジカルボキシ
フェニル)プロパン二無水物、ビス(3,4−ジカルボ
キシフェニル)エ−テル二無水物、これらの酸、酸エス
テルが挙げられる。これらの酸の一部をピロメリット酸
二無水物、3,3’,4,4’−ベンゾフェノンテトラ
カルボン酸二無水物、3,3’,4,4’−ビフェニル
テトラカルボン酸二無水物によって置き換えられてもよ
い。
The tetracarboxylic dianhydrides (acids, dianhydrides, acid esters) which can be used for the above-mentioned non-crystalline, heat-fusible aromatic polyimides include 2,3,3
3 ', 4'-biphenyltetracarboxylic dianhydrides are most preferred, but 2,2-bis (3,4-dicarboxyphenyl) propane dianhydride, bis (3,4-dicarboxyphenyl) e-anhydride Terdianhydrides, their acids and acid esters. Some of these acids are converted by pyromellitic dianhydride, 3,3 ', 4,4'-benzophenonetetracarboxylic dianhydride, 3,3', 4,4'-biphenyltetracarboxylic dianhydride. It may be replaced.

【0012】この発明における前記のポリイミドに使用
することができる芳香族ジアミンとしては、1,3−ビ
ス(4−アミノフェノキシ)ベンゼン、1,3−ビス
(3−アミノフェノキシ)ベンゼン、3,3’−ジアミ
ノジフェニルエ−テル、3,3’−ジアミノベンゾフェ
ノン、2,2−ビス(3−アミノフェニル)プロパン、
1,4−ビス(3−アミノフェノキシ)ベンゼン、4,
4’−ビス(3−アミノフェニル)ジフェニルエ−テ
ル、4,4’−ビス(3−アミノフェニル)ジフェニル
メタン、4,4’−ビス(3−アミノフェノキシ)ジフ
ェニルエ−テル、4,4’−ビス(3−アミノフェノキ
シ)ジフェニルメタン、2,2−ビス〔3−(アミノフ
ェノキシ)フェニル〕プロパンなどの複数のベンゼン環
とO、CH2、C(CH3 2 、O(Bz)O(Bz:
ベンゼン)、(Bz)O(Bz)などの基を分子主鎖中
に有する柔軟な構造でジアミンがメタ位にある芳香族ジ
アミンが好適に使用される。
The aromatic diamine which can be used for the polyimide in the present invention includes 1,3-bis (4-aminophenoxy) benzene, 1,3-bis (3-aminophenoxy) benzene, 3,3 '-Diaminodiphenyl ether, 3,3'-diaminobenzophenone, 2,2-bis (3-aminophenyl) propane,
1,4-bis (3-aminophenoxy) benzene, 4,
4'-bis (3-aminophenyl) diphenyl ether, 4,4'-bis (3-aminophenyl) diphenylmethane, 4,4'-bis (3-aminophenoxy) diphenyl ether, 4,4 ' - bis (3-aminophenoxy) diphenylmethane, a plurality of benzene rings and O such as 2,2-bis [3- (aminophenoxy) phenyl] propane, CH 2, C (CH 3 ) 2, O (Bz) O ( Bz:
An aromatic diamine having a flexible structure having a group such as (benzene) or (Bz) O (Bz) in the molecular main chain and having a diamine at the meta position is suitably used.

【0013】この発明におけるポリイミドは、前記の各
成分を使用し、好適にはテトラカルボン酸二無水物を過
剰の条件下、もしくはジカルボン酸無水物でジアミン末
端を封止する条件下で有機溶媒中で反応させてポリアミ
ック酸の溶液(均一な溶液状態が保たれていれば一部が
イミド化されていてもよい)とする。ポリイミドのアミ
ン末端を封止するためのジカルボン酸無水物、例えば、
無水フタル酸およびその置換体、ヘキサヒドロ無水フタ
ル酸およびその置換体、無水コハク酸およびその置換体
などを使用してもよい。
The polyimide in the present invention is prepared by using each of the above-mentioned components in an organic solvent, preferably under an excess of tetracarboxylic dianhydride or under conditions of blocking diamine terminals with dicarboxylic anhydride. To form a solution of polyamic acid (partially imidized as long as a uniform solution state is maintained). Dicarboxylic anhydrides for capping the amine end of the polyimide, for example,
Phthalic anhydride and substituted products thereof, hexahydrophthalic anhydride and substituted products thereof, succinic anhydride and substituted products thereof, and the like may be used.

【0014】この発明における前記のポリイミドを得る
ためには、N−メチル−2−ピロリドン、N,N−ジメ
チルアセトアミドなどの有機溶媒中、好適には20〜6
0℃の反応温度で、ジアミン(アミノ基のモル数とし
て)の使用量が酸無水物の全モル数(テトラ酸二無水物
とジカルボン酸無水物の酸無水物基としての総モルとし
て)に対する比として、好ましくは0.9〜1.0、特
に0.98〜1.0、そのなかでも特に0.99〜1.
0であり、末端ジアミンを封止するジカルボン酸無水物
の使用量がテトラカルボン酸二無水物の酸無水物基モル
量に対する比として、好ましくは0.05以下、特に
0.0001〜0.02であるような割合の各成分を反
応させることが好ましい。
In order to obtain the above-mentioned polyimide in the present invention, an organic solvent such as N-methyl-2-pyrrolidone and N, N-dimethylacetamide is preferably used in an amount of 20 to 6%.
At a reaction temperature of 0 ° C., the amount of diamine (as moles of amino groups) used is relative to the total number of moles of acid anhydride (as total moles of tetraacid dianhydride and dicarboxylic anhydride as acid anhydride groups). The ratio is preferably 0.9 to 1.0, particularly 0.98 to 1.0, and particularly preferably 0.99 to 1.0.
0, and the amount of the dicarboxylic anhydride used to seal the terminal diamine is preferably 0.05 or less, particularly 0.0001 to 0.02, as a ratio to the molar amount of the acid anhydride group of the tetracarboxylic dianhydride. It is preferred that the components are reacted in such a ratio as follows.

【0015】前記のジアミンおよびジカルボン酸無水物
の使用割合が前記の範囲外であると、得られるポリアミ
ック酸、従ってポリイミドの分子量が小さく、ポリイミ
ド自体の強度および金属箔との剥離強度の低下をもたら
す。また、特にジアミン成分過剰の条件では、ポリアミ
ック酸の環化イミド化あるいは溶媒の除去の際に劣化な
どを生じ、剥離強度の低下をもたらす傾向がある。この
発明において使用される非結晶性で熱融着性のポリイミ
ドとしては、ηinh〔N−メチル−2−ピロリドン中
0.5g/dl(30℃)〕が0.5以上、特に0.5
〜3であるものが好ましい。
If the proportion of the diamine and dicarboxylic anhydride used is outside the above range, the resulting polyamic acid, and thus the polyimide, has a low molecular weight, resulting in a decrease in the strength of the polyimide itself and the peel strength with the metal foil. . In particular, under conditions where the diamine component is excessive, the cyclization imidization of the polyamic acid or the deterioration occurs when the solvent is removed, and the peel strength tends to decrease. As the amorphous and heat-fusible polyimide used in the present invention, ηinh [0.5 g / dl (30 ° C.) in N-methyl-2-pyrrolidone] is 0.5 or more, especially 0.5
-3 are preferred.

【0016】特に、この発明における非結晶性で熱融着
性の芳香族ポリイミドが、芳香族テトラカルボン酸成分
として2,3,3’4’−ビフェニルテトラカルボン
酸、酸のエステルまたは酸二無水物と、ジアミンとして
主鎖中に少なくとも1つのエ−テル結合を有し且つエ−
テル結合を介してフェニル基を少なくとも2つ有する芳
香族ジアミンとから重合、イミド化されたポリイミドが
好ましい。
In particular, the non-crystalline, heat-fusible aromatic polyimide according to the present invention is characterized in that the aromatic tetracarboxylic acid component is 2,3,3'4'-biphenyltetracarboxylic acid, acid ester or acid dianhydride. And at least one ether bond in the main chain as a diamine and an ether
A polyimide polymerized and imidized from an aromatic diamine having at least two phenyl groups via a tell bond is preferable.

【0017】この発明のポリイミド組成層を構成するも
う一方の熱伝導性の向上に有効な充填材としては結晶性
シリカ粉末、窒化珪素粉末、窒化アルミニウム粉末、窒
化ホウ素、アルミナ粉末、酸化マグネシウム粉末、炭化
珪素粉末またはこれらの混合物を代表例として挙げるこ
とができる。
As the other filler effective for improving the thermal conductivity of the polyimide composition layer of the present invention, crystalline silica powder, silicon nitride powder, aluminum nitride powder, boron nitride, alumina powder, magnesium oxide powder, A typical example is silicon carbide powder or a mixture thereof.

【0018】このポリイミドと充填材との配合比率とし
ては組成物全体100重量%中、ポリイミドが5〜50
重量%に対して充填材が50〜95重量%が好ましい。
より好ましくはポリイミドが10〜45重量%に対して
充填材が55〜90重量%であることが熱伝導性が高く
好ましい。
The mixing ratio of the polyimide and the filler is 5 to 50% by weight in 100% by weight of the whole composition.
The filler is preferably 50 to 95% by weight based on the weight%.
More preferably, the content of the filler is 55 to 90% by weight with respect to 10 to 45% by weight of the polyimide, because the thermal conductivity is high.

【0019】この発明のポリイミド絶縁膜に充填される
熱伝導性を向上させるのに有効な充填材の充填方法とし
ては、特に限定されないが、具体例としては、予め重合
されたポリイミド前駆体であるポリアミド酸の有機溶媒
溶液中に充填材の粉末を所定量容器に配合し、ホモミキ
サ−等の攪拌機により攪拌混合する方法、あるいはポリ
アミド酸を重合する際に予め重合溶媒中に充填材を分散
させておいて、この充填材分散溶媒中でポリアミド酸を
重合し、混合する方法などを挙げることができる。
The method of filling the filler material which is effective for improving the thermal conductivity of the polyimide insulating film of the present invention is not particularly limited, but a specific example is a pre-polymerized polyimide precursor. A method of mixing a predetermined amount of filler powder in a polyamic acid organic solvent solution in a container and stirring and mixing with a stirrer such as a homomixer, or dispersing the filler in a polymerization solvent in advance when polymerizing polyamic acid. Here, a method of polymerizing and mixing the polyamic acid in the filler dispersion solvent and the like can be mentioned.

【0020】この発明におけるポリイミド絶縁膜の厚さ
は特に限定されないが、通常5〜150μm、好ましく
は8〜50μmである。
The thickness of the polyimide insulating film in the present invention is not particularly limited, but is usually 5 to 150 μm, preferably 8 to 50 μm.

【0021】この発明の金属ベ−スプリント基板は、前
記の熱伝導性の優れた電気絶縁性ポリイミド組成物から
なる絶縁膜によって二層の金属箔を接合してなる。ここ
で、二層の金属箔の一層は回路用(導電性)の金属箔、
好適には銅箔であり、もう一方の金属箔がベ−ス基板用
の金属箔(板といわれるものも含む)、好適には銅箔、
アルミニウム箔、ステンレス箔または鉄箔である。
The metal-based printed circuit board of the present invention comprises two layers of metal foil joined by an insulating film made of the above-mentioned electrically insulating polyimide composition having excellent heat conductivity. Here, one of the two layers of metal foil is a circuit (conductive) metal foil,
It is preferably a copper foil, and the other metal foil is a metal foil for a base substrate (including a so-called plate), preferably a copper foil.
Aluminum foil, stainless steel foil or iron foil.

【0022】この発明に用いられる金属箔の厚さは特に
制限はないが、回路用(導電性)金属箔用としては3〜
175μmのもの、好ましくは8〜105μmのものが
使用され、ベ−ス基板用の金属箔(板)用としては50
〜3000μmのものが好適に使用される。また、この
金属箔のポリイミドと接着される表面の表面粗さについ
ては特に限定されないが、JIS B O6O1(表面
粗さの定義と表示)における、中心線平均粗さ(以下R
aと記載する)および十点平均粗さ(以下Rzと記載す
る)で表示されるところの値が、Raについては0.1
μm未満、Rzについては1.00μm未満であるもの
が特に効果が大きく好ましい。その中でも特にこれらの
条件を同時に満足するものが好ましい。
Although the thickness of the metal foil used in the present invention is not particularly limited, it is 3 to 3 for a circuit (conductive) metal foil.
175 μm, preferably 8 to 105 μm, and 50 μm for metal foil (plate) for a base substrate
Thicknesses of up to 3000 μm are preferably used. Although the surface roughness of the surface of the metal foil bonded to the polyimide is not particularly limited, the center line average roughness (hereinafter referred to as R) in JIS B O6O1 (definition and display of surface roughness) is used.
a) and ten-point average roughness (hereinafter referred to as Rz) are Ra 0.1%.
Those having a diameter of less than μm and Rz of less than 1.00 μm are particularly effective and preferred. Among them, those satisfying these conditions at the same time are particularly preferable.

【0023】また、この発明における金属箔としては、
表面に金属単体やその酸化物などの無機物塗膜したり、
あるいはアミノシラン、エポキシシランなどのカップリ
ング剤で処理したり、あるいはサンドプラスト処理、ホ
−リング処理、コロナ処理、プラズマ処理、エッチング
処理などの処理を施したものを使用することも可能であ
る。
The metal foil in the present invention includes:
Inorganic coatings such as simple metals and their oxides on the surface,
Alternatively, a material treated with a coupling agent such as aminosilane or epoxysilane, or a material subjected to a treatment such as a sandplast treatment, a hole treatment, a corona treatment, a plasma treatment, or an etching treatment can be used.

【0024】また、この発明におけるポリイミド絶縁膜
の表面にホ−ニング処理、コロナ処理、プラズマ処理、
エッチング処理などの処理を施してもよい。
In the present invention, the surface of the polyimide insulating film may be subjected to honing treatment, corona treatment, plasma treatment,
A process such as an etching process may be performed.

【0025】この発明の金属ベ−スプリント基板の製造
方法としては特に限定はされないが、具体的な例として
は、予め充填材を充填したポリイミド前駆体であるポリ
アミド酸ド−プをフィルム化し、加熱または化学イミド
化処理したフィルムを製造し、次にこのポリイミドフィ
ルムを金属箔にサンドイッチ状に挟み込み加熱プレスで
加熱圧着する方法や一方の金属箔に充填材を充填したポ
リイミド前駆体であるポリアミック酸ド−プを塗布し、
加熱して乾燥、イミド化した後、もう一方の金属箔を加
熱圧着する方法などを挙げることができる。前記のイミ
ド化は、前述のようにして塗布したポリアミック酸ド−
プを150〜250℃に加熱するか、またはイミド化剤
を添加して150℃以下、特に15〜50℃の温度で反
応させて、イミド環化することが好ましい。
The method for producing the metal-based printed circuit board of the present invention is not particularly limited. As a specific example, a polyamide acid dope, which is a polyimide precursor filled with a filler in advance, is formed into a film and heated. Alternatively, a chemically imidized film is produced, and then the polyimide film is sandwiched between metal foils and heated and pressed by a heat press.Polyamic acid oxide, a polyimide precursor in which one metal foil is filled with a filler, is used. -Apply
After heating, drying and imidizing, the other metal foil may be heated and pressed. The imidization is carried out by the polyamic acid dope applied as described above.
It is preferable to heat the resin to 150 to 250 ° C. or add an imidizing agent and react at a temperature of 150 ° C. or less, particularly 15 to 50 ° C., to effect imide cyclization.

【0026】塗布する方法としては特に限定はないが、
コンマコ−タ−、ナイフコ−タ−、ロ−ルコ−タ−、リ
バ−スコ−タ−、ダイコ−タ−、グラビアコ−タ−、ワ
イヤ−バ−等公知の塗布装置を使用することができる。
また、加熱方法は熱風、熱窒素、遠赤外線、高周波誘導
加熱など公知の方法を挙げることができる。
Although there is no particular limitation on the method of coating,
Known coating devices such as a comma coater, knife coater, roll coater, reverse coater, die coater, gravure coater, wire bar and the like can be used. .
In addition, as a heating method, known methods such as hot air, hot nitrogen, far infrared rays, and high-frequency induction heating can be used.

【0027】加熱圧着の温度条件としては、本発明に使
用されるポリイミド層のガラス転移点以上にすることが
好ましい。具体的には250〜350℃の温度範囲が好
ましい。これ以下の条件では充分な接着強度が得られな
いし、この温度より高いと接着時に気泡をかみ込む傾向
がある。
The temperature condition of the thermocompression bonding is preferably higher than the glass transition point of the polyimide layer used in the present invention. Specifically, a temperature range of 250 to 350 ° C. is preferable. If the temperature is lower than this, sufficient adhesive strength cannot be obtained, and if the temperature is higher than this, bubbles tend to be trapped during bonding.

【0028】[0028]

【実施例】以下に実施例を挙げて本発明を説明する。The present invention will be described below with reference to examples.

【0029】実施例1 300ccセパラブルフラスコに重合溶媒であるジメチ
ルアセトアミドを200ml仕込み、このジメチルアセ
トアミド中に窒化アルミニウムの粉体を102.7g仕
込み超音波分散器に15分間かけて窒化アルミニウムを
一次粒子に分散処理した後、攪拌翼を取り付けて攪拌を
行いながら1,3−ビス(4−アミノフェノキシ)ベン
ゼン21.929g仕込み、10分間攪拌を行った後、
2,3,3’,4’−ビフェニルテトラカルボン酸ジ無
水物22.071gを仕込んだ。3時間反応を行い、ポ
リイミド前駆体であるポリアミド酸(ポリアミック酸)
の窒化アルミニウム含有ド−プを得た。このド−プ中の
窒化アルミニウムの含量はポリイミド組成物中69.5
重量%となる。このポリアミック酸ド−プを40μmの
フィルタ−を用いて5kg/cm2 の加圧下で窒化アル
ミニウムの凝集物を濾別した。得られたド−プの粘度は
900ポイズであった。
Example 1 A 300 cc separable flask was charged with 200 ml of dimethylacetamide as a polymerization solvent, and 102.7 g of aluminum nitride powder was charged into the dimethylacetamide. The primary particles of aluminum nitride were placed in an ultrasonic disperser for 15 minutes. After the dispersion treatment, 21.929 g of 1,3-bis (4-aminophenoxy) benzene was charged while stirring by attaching a stirring blade, followed by stirring for 10 minutes.
2,2.071 g of 2,3,3 ', 4'-biphenyltetracarboxylic dianhydride was charged. After reacting for 3 hours, polyamic acid (polyamic acid) which is a polyimide precursor
Was obtained. The content of aluminum nitride in this dope was 69.5% in the polyimide composition.
% By weight. Aggregates of aluminum nitride were filtered off from the polyamic acid dope under a pressure of 5 kg / cm 2 using a 40 μm filter. The resulting dope had a viscosity of 900 poise.

【0030】このド−プを150μmのアルミニウム箔
上に35μmの厚さでコ−ティングし、250℃の熱風
条件下でイミド化を行った。得られたアルミニウム箔上
にコ−ティングされた窒化アルミニウムを含有するポリ
イミド層(厚さ25μm)は均一にアルミニウム箔上に
接着されたものであった。さらに、ポリイミド層がコ−
ティングされているにもかかわらず、この積層体はソリ
の全くないものであった。なお、このポリイミドについ
て別途測定したX線回折法(広角X線法)によるル−ラ
ンド法での結晶化度は0%で、ηinh〔N−メチル−
2−ピロリドン中、0.5g/dl(30℃)〕が0.
7で、ガラス転移点(Tg、)は250℃であった。次
いでこのアルミニウム箔上にコ−ティングされたポリイ
ミド層上に35μmの電解銅箔(福田金属株式会社製)
をホットプレスで320℃の温度条件で圧着した。この
ようにして得られアルミニウム金属ベ−スプリント基板
について、金属箔/ポリイミド界面のピ−ル強度(18
0°剥離法により、引張り強度試験機を使用して常温で
測定)を測定した。結果を表1に示す。またこの実施例
のポリアミド酸ド−プを使用して、厚さ40μmのフィ
ルムを作成し、このフィルムの熱伝導率を京都電子工業
株式会社製の迅速熱伝導率計を使用して測定した。結果
を表1に示す。
This dope was coated on an aluminum foil of 150 μm in a thickness of 35 μm, and imidization was carried out at 250 ° C. with hot air. The obtained aluminum nitride-containing polyimide layer (thickness: 25 μm) coated on the aluminum foil was uniformly adhered on the aluminum foil. In addition, the polyimide layer
Despite being laminated, the laminate was completely free of warpage. The degree of crystallinity of this polyimide measured by the Leuland method by the X-ray diffraction method (wide-angle X-ray method) was 0%, and ηinh [N-methyl-
0.5 g / dl (at 30 ° C.) in 2-pyrrolidone].
At 7, the glass transition point (Tg) was 250 ° C. Next, a 35 μm electrolytic copper foil (manufactured by Fukuda Metals Co., Ltd.) was placed on the polyimide layer coated on the aluminum foil.
Was pressed with a hot press at a temperature of 320 ° C. With respect to the aluminum metal base printed board thus obtained, the peel strength at the metal foil / polyimide interface (18
(Measured at room temperature using a tensile strength tester) by the 0 ° peeling method. Table 1 shows the results. Further, a film having a thickness of 40 μm was prepared using the polyamic acid dope of this example, and the thermal conductivity of this film was measured using a rapid thermal conductivity meter manufactured by Kyoto Electronics Industry Co., Ltd. Table 1 shows the results.

【0031】実施例2 窒化アルミニウムの仕込み量を66gにした以外は実施
例1と同様な操作によりポリイミド組成物中に窒化アル
ミニウムが60重量%含有する組成となるポリアミック
酸ド−プを得た。このド−プの粘度は820ポイズであ
った。このド−プを使用して実施例1に記載と同様の方
法によって金属ベ−スプリント基板を作成した。結果を
表1に示す。
Example 2 A polyamic acid dope having a composition containing 60% by weight of aluminum nitride in a polyimide composition was obtained in the same manner as in Example 1 except that the amount of aluminum nitride charged was changed to 66 g. The viscosity of this dope was 820 poise. Using this dope, a metal-based printed circuit board was prepared in the same manner as described in Example 1. Table 1 shows the results.

【0032】実施例3 窒化アルミニウムの替わりに窒化珪素を使用した以外は
実施例1と同様の操作により、ポリイミド層に窒化珪素
を70wt%含有するポリイミド層を有する金属ベ−ス
プリント基板を作成した。評価結果を表1に示す。
Example 3 A metal-based printed board having a polyimide layer containing 70% by weight of silicon nitride in the polyimide layer was prepared in the same manner as in Example 1 except that silicon nitride was used instead of aluminum nitride. Table 1 shows the evaluation results.

【0033】実施例4 実施例1で調整したポリアミド酸ド−プを使用して、金
属箔として厚さ150μmのステンレス箔(SUS−3
04)を用い、このステンレス箔上にポリアミド酸ド−
プをコ−トし、実施例1と同様の条件によりステンレス
箔上にポリイミド層を形成した。これに銅箔を実施例1
と同様の条件で圧着し、ステンレスをベ−ス金属とした
プリント基板を得た。結果を表1に示す。
Example 4 Using the polyamide acid dope prepared in Example 1, a 150 μm thick stainless steel foil (SUS-3) was used as a metal foil.
04) on the stainless steel foil.
Then, a polyimide layer was formed on a stainless steel foil under the same conditions as in Example 1. Example 1 with copper foil
Then, a printed circuit board using stainless steel as a base metal was obtained. Table 1 shows the results.

【0034】実施例5 ポリイミドのジアミン成分に4,4−ジアミノジフェニ
ルエ−テルを使用した以外は実施例1と同様の操作によ
り窒化アルミニウムを含有したポリイミド層を有する金
属ベ−スプリント基板を作成した。結果を表1に示す。
Example 5 A metal-based printed circuit board having a polyimide layer containing aluminum nitride was prepared in the same manner as in Example 1 except that 4,4-diaminodiphenyl ether was used as the diamine component of the polyimide. . Table 1 shows the results.

【0035】実施例6 実施例1で調整したポリアミド酸ド−プを使用して、金
属箔として厚さ500μmの銅箔を用い、この銅箔箔上
にポリアミド酸ド−プをコ−トし、実施例1と同様の条
件により銅箔箔上にポリイミド層を形成した。これに銅
箔を実施例1と同様の条件で圧着し、銅箔をベ−ス金属
としたプリント基板を得た。結果を表1に示す。
Example 6 Using the polyamic acid dope prepared in Example 1, a 500 μm thick copper foil was used as a metal foil, and the polyamic acid dope was coated on this copper foil foil. A polyimide layer was formed on a copper foil under the same conditions as in Example 1. A copper foil was pressure-bonded thereto under the same conditions as in Example 1 to obtain a printed circuit board using the copper foil as a base metal. Table 1 shows the results.

【0036】比較例1 ポリイミドの酸無水物として3,3’,4,4’−ビフ
ェニルテトラカルボン酸ジ無水物、ジアミンとしてパラ
フェニレンジアミンを使用した以外は実施例1と同様に
してポリイミド組成物を調製した。組成物は粉末化し絶
縁膜を形成できなかった。この組成物層を使用した他は
同様の操作によって金属ベ−スプリント基板を作成し
た。この金属ベ−スプリント基板の金属箔/ポリイミド
層のピ−ル強度を測定した。結果を表1に示す。
Comparative Example 1 A polyimide composition was prepared in the same manner as in Example 1 except that 3,3 ', 4,4'-biphenyltetracarboxylic dianhydride was used as the acid anhydride of the polyimide and paraphenylenediamine was used as the diamine. Was prepared. The composition was powdered and an insulating film could not be formed. A metal-based printed circuit board was prepared by the same operation except that this composition layer was used. The peel strength of the metal foil / polyimide layer of the metal base printed board was measured. Table 1 shows the results.

【0037】比較例2 ポリイミドの酸無水物として3,3’,4,4’−ビフ
ェニルテトラカルボン酸ジ無水物、ジアミンとして4,
4’−ジアミノジフェニルエ−テルを使用した他は実施
例1と同様にしてポリイミド組成物を調製した。組成物
は粉末化し絶縁膜を形成できなかった。この組成物層を
使用した他は同様の操作によって金属ベ−スプリント基
板を作成した。この金属ベ−スプリント基板の金属箔/
ポリイミド層のピ−ル強度を測定した。結果を表1に示
す。
Comparative Example 2 3,3 ′, 4,4′-biphenyltetracarboxylic dianhydride as an acid anhydride of polyimide and 4,4 as a diamine
A polyimide composition was prepared in the same manner as in Example 1 except that 4'-diaminodiphenyl ether was used. The composition was powdered and an insulating film could not be formed. A metal-based printed circuit board was prepared by the same operation except that this composition layer was used. The metal foil of this metal-based printed circuit board /
The peel strength of the polyimide layer was measured. Table 1 shows the results.

【0038】比較例3 ポリイミドのジアミン成分としてパラフェニレンジアミ
ンを使用した以外は実施例1と同様の操作により金属ベ
−スプリント基板を作成し、金属箔/ポリイミド層のピ
−ル強度を測定した。結果を表1に示す。
Comparative Example 3 A metal-based printed circuit board was prepared in the same manner as in Example 1 except that paraphenylenediamine was used as the diamine component of the polyimide, and the peel strength of the metal foil / polyimide layer was measured. Table 1 shows the results.

【0039】比較例4 窒化アルミニウムを添加しない他は実施例1と同様の重
合方法により、窒化アルミニウムを含有しないポリアミ
ド酸ド−プを調製し、このド−プを使用して、ガラス板
上でキャスティングフィルムを作成した。このフィルム
を250℃の温度条件でイミド化してポリイミドフィル
ムを得た。このポリイミドフィルムの熱伝導率を実施例
1と同様の方法により測定した。結果を表1に示す。
Comparative Example 4 A polyamic acid dope containing no aluminum nitride was prepared by the same polymerization method as in Example 1 except that no aluminum nitride was added, and this dope was used to form a polyamic acid dope on a glass plate. A casting film was made. This film was imidized at a temperature of 250 ° C. to obtain a polyimide film. The thermal conductivity of this polyimide film was measured by the same method as in Example 1. Table 1 shows the results.

【0040】実施例7 窒化アルミニウムの仕込み量を変えた以外は実施例1と
同様な操作によりポリイミド組成物中に窒化アルミニウ
ムが85重量%含有する組成となるポリアミック酸ド−
プを得た。このド−プを使用して実施例1に記載と同様
の方法によって金属ベ−スプリント基板を作成した。こ
の金属ベ−スプリント基板の金属箔/ポリイミド界面の
ピ−ル強度は1.1kg/cmであり前記の各実施例の
ものより大幅に良好な熱伝導率を示す。
Example 7 The same operation as in Example 1 was carried out except that the amount of aluminum nitride was changed, and a polyamic acid oxide containing 85% by weight of aluminum nitride in the polyimide composition was obtained.
Got Using this dope, a metal-based printed circuit board was prepared in the same manner as described in Example 1. The peel strength of the metal foil / polyimide interface of this metal-based printed circuit board was 1.1 kg / cm, which is much better than that of each of the above embodiments.

【0041】[0041]

【表1】 [Table 1]

【0042】実施例8 実施例1〜7で得られた金属ベ−スプリント基板を折り
曲げ加工した。Rを3mm〜5mmに折り曲げても、い
ずれも回路用の銅箔の破断や絶縁膜層の剥離が認められ
ず、折り曲げ加工を行うことができた。
Example 8 The metal-based printed circuit boards obtained in Examples 1 to 7 were bent. Even when R was bent to 3 mm to 5 mm, no breakage of the copper foil for the circuit or peeling of the insulating film layer was observed, and the bending process could be performed.

【0043】[0043]

【発明の効果】この発明によれば、加熱圧着により金属
箔との熱融着性が良好で、熱伝導性の優れた電気絶縁性
ポリイミド組成物を得ることができる。
According to the present invention, it is possible to obtain an electrically insulating polyimide composition having good heat-sealing property to a metal foil and excellent heat conductivity by thermocompression bonding.

【0044】また、この発明によれば、二層の金属箔が
ポリイミド層によって強固に接着し、熱伝導性に優れた
金属ベ−スプリント基板を得ることができる。
According to the present invention, a two-layer metal foil is firmly adhered by the polyimide layer, and a metal-based printed board excellent in heat conductivity can be obtained.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 FI C08K 3/34 C08K 3/34 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 6 Identification code FI C08K 3/34 C08K 3/34

Claims (8)

【特許請求の範囲】[Claims] 【請求項1】 非結晶性で熱融着性の芳香族ポリイミド
に、熱伝導性の向上に有効な充填材を含有してなる熱伝
導性の優れた電気絶縁性ポリイミド組成物。
1. An electrically insulating polyimide composition having excellent thermal conductivity, comprising a non-crystalline, heat-fusible aromatic polyimide and a filler effective for improving thermal conductivity.
【請求項2】 非結晶性で熱融着性の芳香族ポリイミド
が、芳香族テトラカルボン酸成分として2,3,3’
4’−ビフェニルテトラカルボン酸、酸のエステルまた
は酸二無水物と、ジアミンとして主鎖中に少なくとも1
つのエ−テル結合およびエ−テル結合を介したフェニル
基を少なくとも2つ有する芳香族ジアミンとから重合、
イミド化されたポリイミドである請求項1記載の熱伝導
性の優れた電気絶縁性ポリイミド組成物。
2. A non-crystalline, heat-fusible aromatic polyimide comprising 2,3,3 ′ as an aromatic tetracarboxylic acid component.
4′-biphenyltetracarboxylic acid, acid ester or acid dianhydride and at least one diamine in the main chain as a diamine
Polymerization from an aromatic diamine having at least two phenyl groups via two ether bonds and an ether bond,
The electrically insulating polyimide composition having excellent thermal conductivity according to claim 1, which is an imidized polyimide.
【請求項3】 電気絶縁性ポリイミド組成物に含有され
る熱伝導性の向上に有効な充填材が結晶性シリカ粉末、
窒化珪素粉末、窒化アルミニウム粉末、窒化ホウ素、ア
ルミナ粉末、酸化マグネシウム粉末、炭化珪素粉末また
はこれらの混合物である請求項1に記載の熱伝導性の優
れた電気絶縁性ポリイミド組成物。
3. A filler effective for improving thermal conductivity contained in the electrically insulating polyimide composition is a crystalline silica powder,
The electrically insulating polyimide composition having excellent heat conductivity according to claim 1, which is a silicon nitride powder, an aluminum nitride powder, a boron nitride, an alumina powder, a magnesium oxide powder, a silicon carbide powder, or a mixture thereof.
【請求項4】 請求項1に記載の熱伝導性の優れた電気
絶縁性ポリイミド組成物からなる絶縁膜によって二層の
金属箔を接合してなる熱伝導性に優れた金属ベ−スプリ
ント基板。
4. A metal-based printed circuit board having excellent thermal conductivity obtained by joining two layers of metal foils with an insulating film comprising the electrically insulating polyimide composition having excellent thermal conductivity according to claim 1.
【請求項5】 二層の金属箔の一層が回路用の銅箔であ
り、もう一方の層がベ−ス基板用のアルミニウム箔、ス
テンレス箔、銅箔または鉄箔で構成された請求項4に記
載の熱伝導性に優れた金属ベ−スプリント基板。
5. One of the two metal foil layers is a copper foil for a circuit, and the other layer is an aluminum foil, a stainless steel foil, a copper foil or an iron foil for a base substrate. 3. A metal-based printed circuit board having excellent thermal conductivity according to 1.
【請求項6】 ポリイミド組成物に含有される熱伝導性
の向上に有効な充填材が結晶性シリカ粉末、窒化珪素粉
末、窒化アルミニウム粉末、窒化ホウ素、アルミナ粉
末、酸化マグネシウム粉末、炭化珪素粉末またはこれら
の混合物である請求項4に記載の熱伝導性に優れた金属
ベ−スプリント基板。
6. A filler contained in the polyimide composition and effective for improving thermal conductivity is a crystalline silica powder, silicon nitride powder, aluminum nitride powder, boron nitride, alumina powder, magnesium oxide powder, silicon carbide powder or The metal-based printed circuit board having excellent thermal conductivity according to claim 4, which is a mixture thereof.
【請求項7】 可とう性があって折り曲げ可能である請
求項4乃至6に記載の熱伝導性に優れた金属ベ−スプリ
ント基板。
7. The metal-based printed circuit board having excellent thermal conductivity according to claim 4, which is flexible and can be bent.
【請求項8】 回路用の銅箔がエッティング加工して配
線とされ、さらにその上に半導体が搭載されている請求
項4乃至7記載の熱伝導性に優れた金属ベ−スプリント
基板。
8. The metal-based printed circuit board having excellent thermal conductivity according to claim 4, wherein a copper foil for a circuit is processed by etching to form a wiring, and a semiconductor is mounted thereon.
JP7857297A 1995-08-01 1997-03-28 Composition having excellent thermal conductivity and metal-based printed circuit board Expired - Lifetime JP3551687B2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP7857297A JP3551687B2 (en) 1997-03-28 1997-03-28 Composition having excellent thermal conductivity and metal-based printed circuit board
US10/454,730 US6797392B2 (en) 1995-08-01 2003-06-03 Polyimide/metal composite sheet

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7857297A JP3551687B2 (en) 1997-03-28 1997-03-28 Composition having excellent thermal conductivity and metal-based printed circuit board

Publications (2)

Publication Number Publication Date
JPH10273592A true JPH10273592A (en) 1998-10-13
JP3551687B2 JP3551687B2 (en) 2004-08-11

Family

ID=13665624

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7857297A Expired - Lifetime JP3551687B2 (en) 1995-08-01 1997-03-28 Composition having excellent thermal conductivity and metal-based printed circuit board

Country Status (1)

Country Link
JP (1) JP3551687B2 (en)

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