JPH10265550A - Epoxy resin composition and semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain an epoxy resin composition causing no mold fouling, and excellent in fluidity, curability, cracking resistance and storage stability. SOLUTION: This epoxy resin composition comprises (A) an epoxy resin, (B) a phenolic curing agent consisting of a compound of the formula: R<3> -(-CH2 - R<1> -CH2 -R<2> -)n -CH2 -R<1> -CH2 -R<3> (R<1> is a hydroxyl-free divalent aromatic group; R<2> is a huydroxyl-bearing divalent aromatic group; R<3> is a hydroxyl-bearing monovalent aromatic group; R<1> to R<3> may be the same as or differ from one another; (n) is an integer of 0 or >=1), (C) a curing promoter, a combination of a tetra-substituted phosphonium/tetra-substituted borate with at least one kind of metal compound selected from metal alkoxides, organic acid metal salts and metal complexes, and (D) 86-95 wt.% of an inorganic filler.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD The present invention relates to a fluidity during molding,
The present invention relates to an epoxy resin composition which is excellent in curability, does not cause mold contamination, and has excellent crack resistance and storage stability during solder reflow, and a semiconductor device sealed with the epoxy resin composition.

[0002]

2. Description of the Related Art Epoxy resins are excellent in heat resistance, moisture resistance, electrical properties, adhesiveness, etc., and can be imparted with various properties by blending and prescription, so that they are used as industrial materials such as paints, adhesives, and electrical insulating materials. Have been.

For example, as a method for sealing electronic circuit components such as semiconductor devices, a hermetic seal made of metal or ceramic and a phenol resin, silicone resin,
Resin sealing using an epoxy resin or the like has been proposed. Among them, resin sealing with an epoxy resin is most actively performed in terms of balance between economy, productivity and physical properties.

On the other hand, in recent years, the density and automation of mounting a semiconductor device package on a printed circuit board have been advanced, and instead of the conventional “insert mounting method” in which lead pins are inserted into holes of the board, the package is mounted on the surface of the board. "Surface mounting method" for soldering has become popular.

[0005] Along with this, the package is also a conventional DIP
(Dual in-line package) to thin FPP (flat plastic package) suitable for high-density mounting and surface mounting.

Although the degree of integration of IC chips has been improved due to advances in microfabrication technology, the area occupied by IC chips in a package has been increased in order to further increase the number of integrated circuits. It is becoming pinned.

In order to seal these packages, if the fluidity of the sealing resin is not maintained at a high level, the packages will not be filled or voids will occur, resulting in defective production. In these respects, fluidity and storage stability will become increasingly important in the future.

[0008] In recent years, a semiconductor device is encapsulated by using a tablet-shaped epoxy resin composition, pouring the epoxy resin composition into a mold heated to 150 ° C. or higher using a low-pressure transfer molding machine, and curing the epoxy resin composition. It is done in. Since molding is usually performed in a short time of 180 seconds or less, curability is also an important physical property.

[0009] Molding is performed continuously using a mold, and mold contamination often occurs. Since this mold contamination causes a defect in the package, it is an important issue that the mold contamination does not occur.

[0010] In surface mounting, mounting is usually performed by solder reflow. In this method, the package is exposed to a high temperature of 200 ° C. or more to melt the solder and bond the chip and the frame. At this time, if the water absorption of the resin is high,
A phenomenon occurs in which the package is cracked due to rapid expansion of moisture in the package. Therefore, crack resistance during solder reflow is very important.

Conventionally, as a curing agent for curing the epoxy sealing resin composition, an amine-based, acid anhydride-based, phenol-based curing agent has been used. Usually, the curing reaction is difficult to proceed only with the curing agent, and therefore, a curing accelerator is added. As the curing accelerator, tertiary amine compounds, secondary amine compounds, boron fluoride, piperidine,
Imidazoles, tertiary phosphine compounds and the like have been used. An epoxy sealing resin composition is obtained by blending an epoxy resin, an inorganic filler, and the like in addition to these curing agents and curing accelerators.

However, according to the conventional compounding method, it is necessary to obtain an epoxy sealing resin composition capable of obtaining a cured product which simultaneously satisfies characteristics such as fluidity, curability, crack resistance during solder reflow, and storage stability. Could not.

On the other hand, Japanese Patent Publication No. 51-24399 discloses that an epoxy sealing resin composition having excellent curability and storage stability can be obtained by combining an epoxy resin, a phenol novolak resin curing agent and a tetra-substituted borate. Have been. JP-B-56-45491 describes a system in which a phenol novolak resin is used as a curing agent, tetraphenylphosphonium / tetraphenyl borate is used as a curing accelerator, and a cresol novolak epoxy resin, an alicyclic epoxy resin is used as an epoxy resin. Have been. However, these epoxy sealing resin compositions have a problem that crack resistance during solder reflow is not sufficient.

[0014]

In view of the above situation,
An object of the present invention is to provide an epoxy resin composition which is excellent in fluidity and curability during molding, does not cause mold contamination, and has excellent crack resistance during solder reflow, peel resistance and storage stability, and the epoxy resin. An object of the present invention is to provide a semiconductor device sealed with a resin composition.

[0015]

That is, the present invention provides: "Epoxy resin (A), phenolic curing agent (B), tetra-substituted phosphonium / tetra-substituted borate
(c1) an epoxy resin composition containing at least one metal compound (c2) selected from metal alkoxides, metal organic acid salts and metal complexes, and an inorganic filler (D), The phenolic curing agent (B) has the chemical formula (I)
An epoxy resin composition comprising a compound represented by the formula: and an inorganic filler (D) in an amount of 86 to 95% by weight of the entire epoxy resin composition.

Embedded image R ³ — (— CH ₂ —R ¹ —CH ₂ —R ² —) _n —CH ₂ —R ¹ —CH ₂ —R ³ (I) (where R ¹ in the formula (I) is divalent aromatic group, R ² is a divalent aromatic group having a hydroxyl group, 1 R ³ is having a hydroxyl group
The valent aromatic groups R ^{1 to} R ³ may be the same or different, and n represents 0 or an integer of 1 or more. ) ", 2. “Tetra-substituted phosphonium / tetra-substituted borate
(c1) The epoxy resin composition, wherein the epoxy resin composition is tetraphenylphosphonium tetraphenylborate. 2. 3. The epoxy resin composition according to any one of the above, wherein the metal compound (c2) is 3 to 70% by weight of the total weight of the metal compound (c2) and the tetra-substituted phosphonium / tetra-substituted borate (c1). "The epoxy resin composition according to any one of the above, wherein the epoxy resin (A) contains an epoxy resin represented by the chemical formula (II).

[0016]

Embedded image (However, R _{1 to} R ₈ in the formula represent a hydrogen atom, a monovalent organic group or a halogen atom.) "The compound of formula (I) is characterized in that R ¹ is a divalent phenyl group, R ² is a divalent phenyl group having a hydroxyl group, and R ³ is a monovalent phenyl group having a hydroxyl group. 5. Any one of the above epoxy resin compositions. ""1 is a compound of the formula (I) wherein R1 is a divalent biphenyl group, R2 is a divalent phenyl group having a hydroxyl group,
^3. The epoxy resin composition according to any one of the above, wherein ³ is a monovalent phenyl group having a hydroxyl group. ”, 7. 7. “Either of the above epoxy resin compositions for semiconductor encapsulation”; It is intended to provide "a semiconductor device in which a semiconductor element is sealed with any one of the epoxy resin compositions."

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The configuration of the present invention will be described below in detail.
In the present invention, “weight” means “mass”.

The epoxy resin (A) used in the present invention comprises 1
Those having two or more epoxy groups in the molecule are not particularly limited, and specific examples thereof include, for example, cresol novolak type epoxy resin, phenol novolak type epoxy resin, biphenyl type epoxy resin, bisphenol A type epoxy resin, bisphenol Examples include F-type epoxy resins, naphthalene skeleton-containing epoxy resins, linear aliphatic epoxy resins, alicyclic epoxy resins, heterocyclic epoxy resins, spiro ring-containing epoxy resins, and halogenated epoxy resins.

In the present invention, the epoxy resin (A) may be used alone or in combination of two or more. Particularly preferred epoxy resin is an epoxy resin having a biphenyl skeleton, specifically, a biphenyl type epoxy resin having a skeleton represented by the following chemical formula (II) as a component.

Embedded image (However, R _{1 to} R ₈ in the formula represent a hydrogen atom, a monovalent organic group or a halogen atom.) When the epoxy resin of the chemical formula (II) is contained as one component of the epoxy resin, the ratio is particularly limited. However, it is preferably 50 to 100% by weight, more preferably 70 to 100% by weight, even more preferably 90 to 10% by weight of the whole epoxy resin.
0% by weight.

Specific examples of the epoxy resin skeleton represented by the chemical formula (II) include 4,4'-bis (2,3-epoxypropoxy) biphenyl and 4,4'-bis (2,3-epoxypropoxy) -3,3 ', 5,5'-tetramethylbiphenyl, 4,4'-bis (2,3-epoxypropoxy) -3,3', 5,5'-tetramethyl-2-chlorobiphenyl, 4, 4'-bis (2,3-epoxypropoxy) -3,3 ', 5,5'-tetramethyl-2-
Bromobiphenyl, 4,4'-bis (2,3-epoxypropoxy) -3,3 ', 5,5'-tetraethylbiphenyl, 4,4'-bis (2,3-epoxypropoxy) -3,3' , 5,5'-tetrabutylbiphenyl,
4,4'-bis (2,3-epoxypropoxy) biphenyl and 4,4'-bis (2,3-epoxypropoxy) -3,3 ', 5,5'-tetramethylbiphenyl and the like. Preferably, 4,4'-bis (2,3
-Epoxypropoxy) -3,3 ', 5,5'-tetramethylbiphenyl and 4,4'-bis (2,3-epoxypropoxy) -3,3', 5,5'-tetraethylbiphenyl. More preferably, 4,4'-bis (2,3-epoxypropoxy) -3,3 ', 5,5'
-Tetramethylbiphenyl.

Each of the above epoxy resins can be used alone or
Alternatively, even when used in a mixed system, the effect is sufficiently exhibited.
Further, a compound in which the epoxy resin is partially added by a reaction of an epoxy group can also be used.

In the present invention, the viscosity of the epoxy resin is not particularly limited, but an epoxy resin having an ICI melt viscosity at 150 ° C. of 3 ps or less is preferable in view of excellent moldability (flowability).

In the present invention, the epoxy resin (A)
Is usually 1 to 1 in the epoxy resin composition.
It is 12% by weight, preferably 3 to 10% by weight, more preferably 3 to 8% by weight. If the amount of the epoxy resin (A) is small, the moldability and adhesiveness are insufficient. If the amount is too large, the coefficient of linear expansion tends to be large, and it tends to be difficult to reduce the stress.

The phenolic curing agent (B) in the present invention
Contains those represented by the chemical formula (I). R ¹ in the chemical formula (I) is a divalent aromatic group having no hydroxyl group, R ²
Is a divalent aromatic group having a hydroxyl group, R ³ is a monovalent aromatic group having a hydroxyl group, R ^{1 to} R ³ may be the same or different, and n is 0 or an integer of 1 or more It is.

Embedded image R ³ — (— CH ₂ —R ¹ —CH ₂ —R ² —) _n —CH ₂ —R ¹ —CH ₂ —R ³ (I) Preferably, R ¹ is a divalent phenyl group, R ² is a divalent phenyl group having a hydroxyl group; R ³ is a phenolic curing agent having a monovalent phenyl group having a hydroxyl group; R ¹ is a divalent biphenyl group; and R ² is a divalent phenyl group having a hydroxyl group. A phenolic curing agent wherein the group, R ^3, is a monovalent phenyl group having a hydroxyl group.

In addition to the phenolic curing agent represented by the chemical formula (I), a phenolic curing agent can be used in combination, and the curing agent is a phenolic curing agent that cures by reacting with the epoxy resin (A). If it is not particularly limited, specific examples thereof include, for example, phenol-novolak resin,
Examples include cresol novolak resin, various novolak resins synthesized from bisphenol A and resorcin, and various polyvalent phenol compounds such as tris (hydroxyphenyl) methane and dihydroxybiphenyl. When used in combination curing agent other than the phenolic curing agent represented formula (I) ^De, the content of the mixing ratio of the phenol type curing agent represented by the formula (I) 2 of total phenolic curing agent amount
0-100% by weight, 50-100% by weight, 70-100
% By weight, preferably in the order of 80 to 100% by weight.

In the present invention, the compounding amount of the phenolic curing agent (B) is usually 0.1% of the entire epoxy resin composition.
It is 1 to 10% by weight, preferably 0.5 to 7% by weight, more preferably 1 to 6% by weight. Furthermore, the mixing ratio of the epoxy resin (A) and the phenolic curing agent (B) is such that the chemical equivalent ratio of (B) to (A) is 0.5 to 1.5 in view of mechanical properties and moisture resistance reliability. In particular, it is preferably in the range of 0.8 to 1.2.

In the present invention, a tetra-substituted phosphonium / tetra-substituted borate (c1) and one or more metal compounds (c2) selected from metal alkoxides, metal organic acid salts and metal complexes are blended. . These usually function as a curing accelerator for the epoxy resin.

The amount of these additives is not particularly limited, but preferably, the total weight of the tetra-substituted phosphonium / tetra-substituted borate (c1) and the above-mentioned metal compound (c2) is 0% of the weight of the epoxy resin composition. 0.05-1.5% is preferable. It is more preferably 0.08 to 1.0%, and still more preferably 0.1 to 0.5%. (c1) and (c
The compounding ratio between 2) is not particularly limited, but the metal compound
(c2) is 3 to 70% by weight, more preferably 3 to 50% by weight, more preferably 3 to 70% by weight of the total weight of the metal compound (c1) and the tetra-substituted phosphonium / tetra-substituted borate (c2). 20% by weight.

The tetra-substituted phosphonium / tetra-substituted borate may be added as it is, or may be mixed by heating with the curing agent or epoxy resin used. Metal compound (c2)
May be added as it is, or after heating and mixing with the curing agent or epoxy resin to be used.

Preferred examples of the tetra-substituted phosphonium tetra-substituted borate (c2) include tetrabutyl phosphonium tetraphenyl borate, n-butyl triphenyl phosphonium tetraphenyl borate, and tetraphenyl phosphonium tetraphenyl borate. , Trimethylphenylphosphonium tetraphenylborate, diethylmethylphenylphosphonium tetraphenylborate, diallylmethylphenylphosphonium tetraphenylborate, (2-hydroxyethyl) triphenylphosphonium tetraphenylborate , Ethyltriphosphonium / tetraphenylborate, p-xylenebis (triphenylphosphonium / tetraphenylborate), tetraphenylphosphonium / tetraethylborate, tetraf And phenylphosphonium triethylphenyl borate and tetraphenylphosphonium tetrabutyl borate. A more preferred example is tetraphenylphosphonium tetraphenylborate. Two or more kinds of the tetra-substituted phosphonium / tetra-substituted borate can be added simultaneously.

The metal compound (c2) added in the present invention is any one of a metal alkoxide, a metal organic acid salt and a metal complex. These contribute in some way to the curing reaction of the epoxy resin. As the metal complex, an acetylacetonate complex is exemplified. Examples of metal atoms constituting these compounds include zirconium, magnesium, aluminum, titanium, yttrium, silver, lead, and cobalt. Specific examples include zirconium tetramethoxide, zirconium tetraethoxide, zirconium tetraisopropoxide, zirconium tetramethoxide.
-n-propoxide, zirconium tetrabutoxide, titanium tetraethoxide, titanium tetraisopropoxide, titanium tetra-n-propoxide, titanium tetrabutoxide, titanium tetrakis (2-ethylhexyloxy) titanium, zirconium tetrakisacetylacetonate, titanium tetrakisacetylacetonate , Aluminum triacetylacetonate, tetrastearyl oxytitanium, titanium diisopropoxybisacetylacetonate, titanium di-n-fujiki bistriethanol aminate, aluminum magnesium isopropoxide, bis (acetylacetonate) dipyridine cobalt, etc. Can be mentioned.

As the inorganic filler (D) in the present invention, silica, calcium carbonate, magnesium carbonate, alumina, magnesia, magnesium aluminum oxide, zirconia, zircon, clay, talc, calcium silicate, titanium oxide, antimony oxide, asbestos And glass fiber, but silica is preferred. These inorganic fillers can be used alone or in combination of two or more. Examples of the silica include spherical natural silica, crushed natural silica, and spherical synthetic silica. These silicas can be used alone or in combination of two or more.

In the present invention, the ratio of the inorganic filler (D) to the entire epoxy resin composition is from 86 to 95% by weight, preferably 88 from the viewpoint of moldability and low stress represented by mold stains. ~ 93% by weight.

The following substances can also be added to the epoxy resin composition of the present invention.

In the composition of the present invention, the addition of a silane coupling agent, a titanate coupling agent or the like is preferable from the viewpoint of improving reliability. Further, it is also effective to previously surface-treat the coupling agent inorganic filler (D) with a coupling agent such as a silane coupling agent or a titanate coupling agent.

As the coupling agent, a silane coupling agent in which an organic group having such a functional group and a hydrolyzable group such as an alkoxy group are directly bonded to a silicon atom, such as epoxysilane, aminosilane, and mercaptosilane, is preferably used. Preferred are epoxysilane and aminosilane. A preferable addition amount is 1% by weight or less based on the entire epoxy resin composition.

The following substances can also be added to the epoxy resin composition.

In the composition of the present invention, a bromo compound can be blended although it is not an essential component. The substantially existing bromo compound is usually added as a flame retardant to the epoxy resin composition for semiconductor encapsulation, and is not particularly limited, and may be a known one. Preferred specific examples of the bromo compound present include brominated epoxy resins such as brominated bisphenol A type epoxy resin and brominated phenol novolak type epoxy resin, brominated polycarbonate resin, brominated polystyrene resin, brominated polyphenylene oxide resin, Bromobisphenol A,
Examples thereof include decabromodiphenyl ether, and among them, brominated epoxy resins such as brominated bisphenol A type epoxy resin and brominated phenol novolak type epoxy resin are particularly preferable from the viewpoint of moldability.

In the composition of the present invention, an antimony compound can be blended although it is not an essential component. This is usually added as a flame retardant aid to the epoxy resin composition for semiconductor encapsulation, and is not particularly limited, and a known one can be used. Preferred specific examples of the antimony compound include antimony trioxide, antimony tetroxide, and antimony pentoxide.

The epoxy resin composition of the present invention includes a coloring agent such as carbon black and iron oxide, an ion scavenger such as hydrotalcite, a silicone rubber, an olefin copolymer, a modified nitrile rubber, a modified polybutadiene rubber,
Elastomers such as modified silicone oil, thermoplastic resins such as polyethylene, long-chain fatty acids, metal salts of long-chain fatty acids, long-chain fatty acid esters, long-chain fatty acid amides, release agents such as paraffin wax, and organic peroxides A crosslinking agent such as a substance can be arbitrarily added.

As a method for producing the epoxy resin composition of the present invention, the above compound is heated and kneaded, for example, at 50 to 170 ° C.
Melting and kneading using a known kneading method such as a Banbury mixer, a kneader, a roll, a single or twin screw extruder and a co-kneader,
It can be obtained by solidification and, if necessary, tableting. Further, the semiconductor device is obtained by heating and fluidizing the epoxy resin composition of the present invention, sealingly molding and curing the semiconductor element.

[0042]

The present invention will be described below in detail with reference to examples. The numbers in Tables 2 and 3 indicate% by weight.

Table 2 shows Examples 1 to 7, and Table 3 shows Comparative Examples 1 to
9 was shown.

The components shown in Table 1 were dry-blended by a mixer at the composition ratios shown in Tables 2 and 3. this,
After heating and kneading for 5 minutes using a mixing roll having a roll surface temperature of 90 ° C., the mixture was cooled and pulverized to produce an epoxy resin composition for semiconductor encapsulation.

Fluidity: 1 using an EMMI-type evaluation mold
Spiral flow was measured at 75 ° C. at a molding speed of 25 m / sec. Curability: A disk having a diameter of 4 inches and a thickness of 3 mm was molded at a molding temperature of 175 ° C. and a molding time of 60 seconds, and Barcol hardness immediately after molding was determined. Crack resistance and peel resistance: In Examples and Comparative Examples, 10 pieces each of 160 pins QFP (outer size: 28 × 28
× 3.3 mm, simulated semiconductor device: 10 × 10 × 0.5 mm,
(Frame material: 42 alloy, chip surface: polyimide film) molded and cured at 175 ° C. for 4 hours, humidified at 85 ° C. and 85% RH for 168 hours, and then 260 ° C. 10 using an IR reflow furnace. Heat treatment was performed for seconds. Then, the number of external cracks is checked and the package containing the crack is determined to be a defective package, and the number is defined as n.
A value of (1-n / 10) × 100 was set as a numerical value indicating crack resistance.
The closer the value is to 100%, the better the crack resistance. On the other hand, when the sample heat-treated at 260 ° C. for 10 seconds using an IR reflow furnace was observed for peeling from the lead frame with an ultrasonic flaw detector, the peeled packages were regarded as defective packages, and the number of the packages was n (1-n / 10) The value of × 100 was used as a numerical value indicating crack resistance. The closer the value is to 100%, the better the peel resistance.

Storage stability: Based on the value of the spiral flow before storage, the product was stored at 28 ° C. and 50% RH for 96 hours, then molded, and the reduction rate of the spiral flow value was expressed. The smaller the value, the better the storage stability.

Mold stain: molding temperature 175 ° C., molding time 80
Twenty 160-pin QFPs were formed under the condition of seconds. The area of the dirty part of the mold part corresponding to the upper and lower surfaces of the package is checked, the area is divided by the area of the mold part corresponding to the upper and lower surfaces of the package, and the result is multiplied by 100 to obtain the degree of mold contamination by%. Displayed with.

[0048]

[Table 1]

The evaluation results of various physical properties are shown in Tables 2 and 3.

[0050]

[Table 2]

[0051]

[Table 3]

As can be seen from Table 2, the epoxy resin compositions of Examples 1 to 7 have fluidity, curability, crack resistance,
Excellent in all physical properties such as peeling resistance, storage stability and mold stain.

On the other hand, Comparative Examples 1 to 3 shown in Table 3
It can be seen that Comparative Examples 6 and 7 are inferior in crack resistance and peeling resistance. In Comparative Example 4, the peeling resistance was not perfect. In Comparative Examples 3, 5, 8, and 9, mold contamination occurs.
In Comparative Examples 3, 5, 8, and 9, storage stability was poor.

[0054]

Industrial Applicability The epoxy resin composition of the present invention is excellent in fluidity, curability, crack resistance, peeling resistance and storage stability, and is suitable for encapsulating semiconductor devices mainly used in transfer molding. is there.

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁶ Identification code FI H01L 23/29 H01L 23/30 R 23/31

Claims (8)

[Claims] 1. One or more selected from an epoxy resin (A), a phenolic curing agent (B), a tetra-substituted phosphonium / tetra-substituted borate (c1), a metal alkoxide, a metal organic acid salt and a metal complex. An epoxy resin composition containing a metal compound (c2) of formula (I) and an inorganic filler (D), wherein the phenolic curing agent (B) contains a compound represented by the chemical formula (I), An epoxy resin composition comprising the agent (D) in an amount of 86 to 95% by weight of the entire epoxy resin composition. Embedded image R ³ — (— CH ₂ —R ¹ —CH ₂ —R ² —) _n —CH ₂ —R ¹ —CH ₂ —R ³ (I) (where R ¹ in the formula (I) is divalent aromatic group, R ² is a divalent aromatic group having a hydroxyl group, 1 R ³ is having a hydroxyl group
The valent aromatic groups R ^{1 to} R ³ may be the same or different, and n represents 0 or an integer of 1 or more. ) 2. The epoxy resin composition according to claim 1, wherein the tetra-substituted phosphonium tetra-substituted borate (c1) is tetraphenyl phosphonium tetraphenyl borate. 3. The epoxy resin composition according to claim 1, wherein the metal compound (c2) is 3 to 70% by weight of the total weight of the metal compound (c2) and the tetra-substituted phosphonium / tetra-substituted borate (c1). . 4. The epoxy resin (A) contains an epoxy resin represented by the chemical formula (II).
Epoxy resin composition. Embedded image (However, R _{1 to} R ₈ in the formula represent a hydrogen atom, a monovalent organic group or a halogen atom.) 5. The compound of formula (I) according to claim ^{1, wherein}
Is a divalent phenyl group, R ² is a divalent phenyl group having a hydroxyl group, and R ³ is a monovalent phenyl group having a hydroxyl group. The epoxy resin composition according to claim 1, wherein 6. The compound of formula (I) according to claim ^{1, wherein}
Is a divalent biphenyl group, R ² is a divalent phenyl group having a hydroxyl group, and R ³ is a monovalent phenyl group having a hydroxyl group. The epoxy resin composition according to claim 1, wherein 7. The epoxy resin composition according to claim 1, which is used for encapsulating a semiconductor. 8. A semiconductor device in which a semiconductor element is sealed with the epoxy resin composition according to claim 7.