JPH10261862A - Manufacture of circuit board - Google Patents
Manufacture of circuit boardInfo
- Publication number
- JPH10261862A JPH10261862A JP6359197A JP6359197A JPH10261862A JP H10261862 A JPH10261862 A JP H10261862A JP 6359197 A JP6359197 A JP 6359197A JP 6359197 A JP6359197 A JP 6359197A JP H10261862 A JPH10261862 A JP H10261862A
- Authority
- JP
- Japan
- Prior art keywords
- plating
- metal film
- irradiated
- circuit
- circuit board
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、平面または三次元
立体の絶縁性基材の表面に回路を形成することによって
得られる回路板の製造方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a circuit board obtained by forming a circuit on the surface of a planar or three-dimensional insulating substrate.
【０００２】[0002]
【従来の技術】絶縁性基材の表面に回路を形成すること
によって回路板を製造するものとして特開平７ー６６５
３３号公報が知られている。この従来例は、図１６
（ａ）のように絶縁性基材１の表面にめっき処理の下地
となる金属膜２を設け、次に、図１６（ｂ）のように非
回路部７にレーザ等の電磁波４を照射して照射部の金属
膜２を除去し、その後、図１６（ｃ）のように回路部３
にめっきを施すようになっている。2. Description of the Related Art A circuit board is manufactured by forming a circuit on the surface of an insulating substrate.
No. 33 is known. This conventional example is shown in FIG.
As shown in FIG. 16A, a metal film 2 serving as a base for plating is provided on the surface of an insulating substrate 1, and then the non-circuit portion 7 is irradiated with an electromagnetic wave 4 such as a laser as shown in FIG. Then, the metal film 2 in the irradiated portion is removed, and then the circuit portion 3 is removed as shown in FIG.
Is to be plated.
【０００３】ところが、上記従来例にあっては、レーザ
等の電磁波４を照射して金属膜２を除去すると図１６
（ｂ）のように、金属膜２端面にバリ５ａが発生し、ま
た、金属膜２が溶融して飛散して回路部３表面に溶着物
が溶着し、図１６（ｃ）のように回路部３にめっきを施
してめっき膜６を形成する場合、これらのバリ５ａや溶
着物が核となってめっきのブツ（突起）やめっき表面に
凹凸２０が生じ、形成される回路板の不良の原因とな
り、歩留りを下げ、生産性が悪いという問題があった。However, in the above conventional example, when the metal film 2 is removed by irradiating an electromagnetic wave 4 such as a laser or the like, FIG.
As shown in FIG. 16 (b), burrs 5a are generated on the end face of the metal film 2, and the metal film 2 is melted and scattered to deposit a welded material on the surface of the circuit portion 3, and as shown in FIG. When plating is performed on the portion 3 to form the plating film 6, these burrs 5 a and the deposited material serve as nuclei to produce bumps (protrusions) of the plating and irregularities 20 on the plating surface. This causes a problem that yield is lowered and productivity is low.
【０００４】[0004]
【発明が解決しようとする課題】本発明は上記の従来例
の問題点に鑑みて発明したものであって、レーザ等の電
磁波の照射により生じるバリや溶着物あるいはこれらに
起因するめっき膜の端面に生じる凹凸形状を除去して回
路板の不良の原因を解消し、歩留りを上げて生産性を向
上することができる回路板の製造方法を提供することを
課題とするものである。SUMMARY OF THE INVENTION The present invention has been made in consideration of the above-mentioned problems of the prior art, and has been developed in view of the above-mentioned problems. It is an object of the present invention to provide a method of manufacturing a circuit board capable of eliminating the cause of the failure of the circuit board by removing the uneven shape generated in the circuit board and increasing the yield and improving the productivity.
【０００５】[0005]
【課題を解決するための手段】上記課題を解決するため
に本発明の回路板の製造方法は、絶縁性基材１の表面に
めっき処理の下地となる金属膜２を設け、少なくとも回
路部３の輪郭にレーザ等の電磁波４を照射することによ
って照射部の金属膜２を除去し、その後、金属膜２の端
面に生じるバリ、溶着物等の被除去物５を除去し、その
後に回路部３にめっきを施すことを特徴とするものであ
る。このような方法を採用することで、電磁波４の照射
により金属膜２の端面に生じるバリ、溶着物等の被除去
物５が除去された回路板を形成することができることに
なる。According to the present invention, there is provided a method of manufacturing a circuit board, comprising: providing a metal film on a surface of an insulating base material as a base for plating; By irradiating an electromagnetic wave 4 such as a laser or the like to the contour of the metal film 2 at the irradiated portion, an object 5 such as a burr or a welded substance generated at an end face of the metal film 2 is removed, and then a circuit portion is formed. 3 is plated. By adopting such a method, it is possible to form a circuit board from which the removal target 5 such as burrs and welds generated on the end face of the metal film 2 by the irradiation of the electromagnetic wave 4 is removed.
【０００６】また、本発明の回路板の製造方法は、絶縁
性基材１の表面にめっき処理の下地となる金属膜２を設
け、少なくとも回路部３の輪郭にレーザ等の電磁波４を
照射することによって照射部の金属膜２を除去し、その
後、回路部３にめっきを施し、その後、めっき膜６の端
面に生じる凹凸形状の被除去物５を除去することを特徴
とするものであってもよい。このような方法を採用する
ことで、電磁波４の照射により金属膜２の端面に生じる
バリ、溶着物等を残したまま回路部３にめっきを施すこ
とによって、バリ、溶着物等を核としてめっき膜表面に
めっきのブツ（突起）や凹凸形状が生じてもこれが除去
された高品質の回路板を形成することができる。In the method of manufacturing a circuit board according to the present invention, a metal film 2 serving as a base for plating is provided on the surface of an insulating base material 1 and at least the contour of the circuit section 3 is irradiated with an electromagnetic wave 4 such as a laser. In this way, the metal film 2 in the irradiated portion is removed, and thereafter, the circuit portion 3 is plated, and thereafter, the object 5 having an uneven shape generated on the end face of the plating film 6 is removed. Is also good. By adopting such a method, plating is performed on the circuit portion 3 while leaving burrs and welds on the end face of the metal film 2 due to the irradiation of the electromagnetic wave 4, thereby plating the burrs and welds and the like as nuclei. Even if bumps (projections) or irregularities of plating are formed on the film surface, a high-quality circuit board from which the bumps and protrusions are removed can be formed.
【０００７】また、研磨材を入れた液体を噴射する液体
ホーニング処理により被除去物５を除去することが好ま
しい。これにより液体ホーニング処理という簡単な方法
により被除去物を除去することができる。また、ポンチ
加工により被除去物５を除去することも好ましい。これ
によりポンチ加工という簡単な方法により被除去物を除
去することができる。Further, it is preferable to remove the object to be removed 5 by a liquid honing process in which a liquid containing an abrasive is injected. Thus, the object to be removed can be removed by a simple method called liquid honing. It is also preferable to remove the object 5 by punching. Thus, the object to be removed can be removed by a simple method called punching.
【０００８】また、電解研磨により被除去物５を除去す
ることも好ましい。これにより電解研磨という簡単な方
法により被除去物を除去することができる。また、電解
脱脂により被除去物５を除去することも好ましい。これ
により電解脱脂という簡単な方法により被除去物を除去
することができる。また、プラズマ処理により被除去物
５を除去することを特徴とすることも好ましい。これに
よりプラズマ処理という簡単な方法により被除去物を除
去することができる。It is also preferable to remove the object 5 by electrolytic polishing. Thus, the object to be removed can be removed by a simple method called electrolytic polishing. It is also preferable to remove the object 5 by electrolytic degreasing. Thus, the object to be removed can be removed by a simple method of electrolytic degreasing. It is also preferable that the object 5 is removed by plasma treatment. Thus, the object to be removed can be removed by a simple method called plasma treatment.
【０００９】また、本発明の回路板の製造方法は、絶縁
性基材１の表面にめっき処理の下地となる金属膜２を設
け、少なくとも回路部３の輪郭にレーザ等の電磁波４を
照射することによって照射部の金属膜２を除去し、その
後、電気めっきで回路部３の膜厚形成と同時に金属膜２
の端面に生じるバリ、溶着物等の被除去物５を除去する
ことを特徴とするものであってもよい。すなわち、電気
めっきで回路部３の膜厚形成時に一時的に＋−を交互に
反転するように印加電圧をかけることで、金属膜２の端
面に生じたバリ、溶着物等の被除去物５を除去しながら
電気めっきで回路部３のめっき膜６を形成することがで
きる。In the method for manufacturing a circuit board according to the present invention, a metal film 2 serving as a base for plating is provided on the surface of an insulating substrate 1 and at least the contour of the circuit section 3 is irradiated with an electromagnetic wave 4 such as a laser. Thus, the metal film 2 in the irradiated portion is removed, and then the metal film 2 is formed simultaneously with the formation of the film thickness of the circuit portion 3 by electroplating.
The removal of the object 5 such as burrs and welded matter generated on the end face of the substrate may be performed. That is, by applying an applied voltage so that + and-are temporarily reversed alternately during the formation of the film thickness of the circuit portion 3 by electroplating, the removal object 5 such as burrs and welds generated on the end face of the metal film 2 is formed. The plating film 6 of the circuit section 3 can be formed by electroplating while removing the plating.
【００１０】また、本発明の回路板の製造方法は、絶縁
性基材１の回路部３に対応する部分をめっき処理の下地
となる金属膜２との密着力の強い絶縁性基材１ａで形成
すると共に非回路部３を金属膜２との密着力の弱い絶縁
性基材１ｂで形成し、この絶縁性基材１の表面にめっき
処理の下地となる金属膜２を設け、少なくとも回路部３
の輪郭にレーザ等の電磁波４を照射することによって照
射部の金属膜２を除去し、その後、回路部３にめっきを
施すことを特徴とするものであってもよい。このような
方法を採用することで、レーザ等の電磁波４を照射する
と、非回路部３の金属膜２は溶ける前に密着力の弱い絶
縁性基材１ｂに対して浮き上がって剥がれてしまうの
で、バリが発生しないことになる。In the method of manufacturing a circuit board according to the present invention, the portion of the insulating substrate 1 corresponding to the circuit portion 3 is formed of the insulating substrate 1a having a strong adhesion to the metal film 2 serving as a base for plating. At the same time, the non-circuit portion 3 is formed of an insulating base material 1b having a weak adhesion to the metal film 2, and the surface of the insulating base material 1 is provided with a metal film 2 serving as a base for plating. 3
May be characterized by irradiating an electromagnetic wave 4 such as a laser or the like on the contour of the metal film 2 to remove the metal film 2 at the irradiated portion, and then plating the circuit portion 3. By adopting such a method, when the electromagnetic wave 4 such as a laser is irradiated, the metal film 2 of the non-circuit portion 3 is lifted and peeled off from the insulating base material 1b having a weak adhesion before melting. Burrs will not occur.
【００１１】[0011]
【発明の実施の形態】以下、本発明を添付図面に示す実
施形態に基づいて説明する。図１には本発明の一方法の
製造順序を示す概略図が示してあり、また、図２には本
発明の他の方法の製造順序を示す概略図が示してある。
図１においては、まず、図１（ａ）のように絶縁性基材
１の表面にめっき処理の下地となる金属膜２を設ける。
次に、図１（ｂ）のように少なくとも回路部３の輪郭に
レーザ等の電磁波４を照射して照射部の金属膜２を除去
する。この図１（ｂ）の工程においてレーザ等の電磁波
４を照射することで金属膜２の端面にバリ５ａ、溶着物
等の被除去物５が生じるが、次の工程で図１（ｃ）のよ
うに上記バリ、溶着物等の被除去物５を除去する。次
に、図１（ｄ）のように回路部３に電気めっきを施して
めっき膜６を形成することで回路板を形成するようにな
っている。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below based on embodiments shown in the accompanying drawings. FIG. 1 is a schematic diagram showing a manufacturing sequence of one method of the present invention, and FIG. 2 is a schematic diagram showing a manufacturing sequence of another method of the present invention.
In FIG. 1, first, as shown in FIG. 1A, a metal film 2 serving as a base for plating is provided on the surface of an insulating substrate 1.
Next, as shown in FIG. 1B, at least the contour of the circuit portion 3 is irradiated with an electromagnetic wave 4 such as a laser to remove the metal film 2 in the irradiated portion. Irradiation of the electromagnetic wave 4 such as a laser beam in the step of FIG. 1B produces an object 5 such as a burr 5a and a deposited material on the end surface of the metal film 2. However, in the next step, FIG. As described above, the object 5 such as the burrs and the deposited material is removed. Next, as shown in FIG. 1D, the circuit portion 3 is electroplated to form a plating film 6, thereby forming a circuit board.
【００１２】また、図２においては、まず、図２（ａ）
のように絶縁性基材１の表面にめっき処理の下地となる
金属膜２を設ける。次に、図２（ｂ）のように少なくと
も回路部３の輪郭にレーザ等の電磁波４を照射して照射
部の金属膜２を除去する（この図２（ｂ）の工程におい
てレーザ等の電磁波４を照射することで金属膜２の端面
に生じたバリ５ａ、溶着物等が発生する）。次に、金属
膜２の端面に生じたバリ５ａ、溶着物等が発生したまま
の状態で、図２（ｃ）のように電気めっきを施してめっ
き膜６を形成する。この電気めっきの工程で、前述のバ
リ５ａ、溶着物を核としてめっきのブツ（突起）やめっ
き表面に凹凸が生じるが、このめっき膜６の端面に生じ
る凹凸形状の被除去物５を図２（ｄ）のように除去して
回路板を形成するようになっている。In FIG. 2, first, FIG.
A metal film 2 serving as a base for plating is provided on the surface of an insulating substrate 1 as described above. Next, as shown in FIG. 2B, at least the contour of the circuit portion 3 is irradiated with an electromagnetic wave 4 such as a laser to remove the metal film 2 in the irradiated portion (in the step of FIG. Irradiation 4 generates burrs 5a, welds, and the like generated on the end faces of metal film 2). Next, in a state where burrs 5a, welds, and the like generated on the end surface of the metal film 2 are generated, electroplating is performed as shown in FIG. 2C to form a plating film 6. In the electroplating step, bumps (protrusions) of the plating and irregularities are formed on the plating surface by using the aforementioned burrs 5a and the deposited material as nuclei. The circuit board is formed by removing as shown in FIG.
【００１３】上記図１、図２のいずれに示す方法におい
ても、被除去物５を除去するに当たっては、例えば、液
体ホーニング処理によって被除去物５を除去したり、あ
るいはポンチ加工により被除去物５を除去したり、ある
いは電解研磨により被除去物５を除去したり、あるい
は、電解脱脂により被除去物５を除去したり、あるいは
プラズマ処理により被除去物５を除去したりするもので
ある。In any of the methods shown in FIGS. 1 and 2, when the object 5 is removed, the object 5 is removed by, for example, a liquid honing process, or the object 5 is removed by punching. Is removed, the object 5 is removed by electrolytic polishing, the object 5 is removed by electrolytic degreasing, or the object 5 is removed by plasma treatment.
【００１４】以下、上記図１、図２に示す各方法におい
て上記被除去物５の各除去例を採用した実施例につき説
明する。 （実施例１）ポリイミド、ポリアミド、ポリエーテルイ
ミド、液晶ポリマー等の電気絶縁性材料を射出成形して
絶縁性基材１を形成する。このようにして得た絶縁性基
材１をアルカリ脱脂した後、絶縁性基材１の表面をプラ
ズマ処理して表面を活性化及び微細な粗面化を行い、そ
の後、絶縁性基材１の表面にスパッタリング、真空蒸着
等により銅、銀、金、ニッケル、白金、パラジウム等の
金属を成膜して絶縁性基材１の表面にめっき処理の下地
となる金属膜２を設ける。この金属膜２の厚みは０．１
〜２μｍ程度である。An embodiment in which each example of removing the object 5 in each of the methods shown in FIGS. 1 and 2 will be described below. (Example 1) An insulating base material 1 is formed by injection-molding an electrically insulating material such as polyimide, polyamide, polyetherimide, and liquid crystal polymer. After the insulating substrate 1 thus obtained is alkali-degreased, the surface of the insulating substrate 1 is plasma-treated to activate and finely roughen the surface. A metal such as copper, silver, gold, nickel, platinum, or palladium is formed on the surface by sputtering, vacuum deposition, or the like, and a metal film 2 serving as a base for plating is provided on the surface of the insulating substrate 1. The thickness of the metal film 2 is 0.1
About 2 μm.
【００１５】次に、絶縁性基材１の表面にレーザ等の電
磁波４を照射して電磁波４を照射した部分のめっき下地
層である金属膜２を除去する。この電磁波４として用い
るレーザとしては、第２高周波ＹＡＧレーザ、ＹＡＧレ
ーザ、エキシマレーザ等が好ましく、ガルバノミラーで
走査することにより、絶縁性基材１の表面のうち回路を
形成する箇所である回路部３以外の部分、すなわち回路
部３間の絶縁スペースとなる非回路部７において照射さ
れるものであり、非回路部７の少なくとも回路部３との
境界領域に非回路部７のパターンに沿って照射すること
により、非回路部７の回路部３との境界領域のめっき下
地層である金属膜２を除去するものである。Next, the surface of the insulating substrate 1 is irradiated with an electromagnetic wave 4 such as a laser to remove the metal film 2 as a plating underlayer in a portion irradiated with the electromagnetic wave 4. A laser used as the electromagnetic wave 4 is preferably a second high-frequency YAG laser, a YAG laser, an excimer laser, or the like, and a circuit portion that forms a circuit on the surface of the insulating substrate 1 by scanning with a galvanomirror. 3, that is, in the non-circuit portion 7 serving as an insulating space between the circuit portions 3, at least in a boundary region between the non-circuit portion 7 and the circuit portion 3 along the pattern of the non-circuit portion 7. The irradiation removes the metal film 2 which is a plating base layer in a boundary region between the non-circuit portion 7 and the circuit portion 3.
【００１６】次に、上記のようにレーザ等の電磁波を照
射することで回路部３の金属膜２の端面に生じるバリや
溶着物等の被除去物５を液体ホーニング処理により除去
する。ここで、液体ホーニングは、水等の液体中にアル
ミナ等のセラミックス、ユリア樹脂等のプラスチック、
ガラス、あるいは細かく砕いた氷等の砥粒を混ぜたもの
を、図３の矢印のように吹き付けて行うものであり、砥
粒の粒径は１００μｍ以下、吹き付け圧力は１．５〜３
Ｋｇ／ｃｍ2 程度が望ましく、回路部３となるめっき下
地である金属膜２を傷つけないように注意する必要があ
る。Next, as described above, the object 5 such as a burr or a welded substance generated on the end face of the metal film 2 of the circuit portion 3 by irradiating the electromagnetic wave such as a laser is removed by a liquid honing process. Here, the liquid honing is a ceramic such as alumina, a plastic such as urea resin in a liquid such as water,
A mixture of abrasive grains such as glass or finely crushed ice is sprayed as shown by an arrow in FIG. 3. The grain diameter of the abrasive grains is 100 μm or less, and the spray pressure is 1.5 to 3 μm.
Kg / cm 2 is desirable, and care must be taken so as not to damage the metal film 2 which is the plating base to be the circuit portion 3.
【００１７】次に、回路部３に給電を行い、電気銅めっ
き、電気ニッケルめっき、電気金めっき等をおこなっ
て、所定厚の金属膜よりなるめっき膜６を形成して回路
板を形成する。ここで、電気めっきとしては、例えば、
硫酸銅８０ｇ／リットル、硫酸１８０ｇ／リットル、塩
素、光沢剤の硫酸銅めっき浴で電気銅めっきを行った
り、例えば、ワット浴（硫酸ニッケル２７０ｇ／リット
ル、塩化ニッケル５０ｇ／リットル、ほう酸４０ｇ／リ
ットル、光沢剤）で電気ニッケルめっきを行ったり、例
えばシアン化金めっき浴で電気金めっき等を行って所定
厚の金属膜よりなるめっき膜６を形成する。Next, power is supplied to the circuit section 3 and an electric copper plating, an electric nickel plating, an electric gold plating and the like are performed to form a plating film 6 made of a metal film having a predetermined thickness to form a circuit board. Here, as the electroplating, for example,
Electroless copper plating is performed in a copper sulfate plating bath of 80 g / liter of copper sulfate, 180 g / liter of sulfuric acid, chlorine, and a brightener. A plating film 6 made of a metal film having a predetermined thickness is formed by performing electro-nickel plating with a brightener, or performing electro-gold plating or the like in a gold cyanide plating bath, for example.
【００１８】なお、被回路部７に残存した金属膜２は必
要に応じてソフトエッチング等で除去してもよいもので
ある。以上の方法により得られる回路板は、ブツ（突
起）等の凹凸の少ない平滑なめっき表面となる。 （実施例２）ポリイミド、ポリアミド、ポリエーテルイ
ミド、液晶ポリマー等の電気絶縁性材料を射出成形して
絶縁性基材１を形成する。このようにして得た絶縁性基
材１をアルカリ脱脂した後、絶縁性基材１の表面をプラ
ズマ処理して表面を活性化及び微細な粗面化を行い、そ
の後、絶縁性基材１の表面にスパッタリング、真空蒸着
等により銅、銀、金、ニッケル、白金、パラジウム等の
金属を成膜して絶縁性基材１の表面にめっき処理の下地
となる金属膜２を設ける。この金属膜２の厚みは０．１
〜２μｍ程度である。The metal film 2 remaining on the circuit portion 7 may be removed by soft etching or the like as necessary. The circuit board obtained by the above method has a smooth plating surface with few irregularities such as bumps (projections). (Example 2) An insulating base material 1 is formed by injection molding an electrically insulating material such as polyimide, polyamide, polyetherimide, and liquid crystal polymer. After the insulating substrate 1 thus obtained is alkali-degreased, the surface of the insulating substrate 1 is plasma-treated to activate and finely roughen the surface. A metal such as copper, silver, gold, nickel, platinum, or palladium is formed on the surface by sputtering, vacuum deposition, or the like, and a metal film 2 serving as a base for plating is provided on the surface of the insulating substrate 1. The thickness of the metal film 2 is 0.1
About 2 μm.
【００１９】次に、絶縁性基材１の表面にレーザ等の電
磁波を照射して電磁波を照射した部分のめっき下地層で
ある金属膜２を除去する。この電磁波として用いるレー
ザとしては、第２高周波ＹＡＧレーザ、ＹＡＧレーザ、
エキシマレーザ等が好ましく、ガルバノミラーで走査す
ることにより、絶縁性基材１の表面のうち回路を形成す
る箇所である回路部３以外の部分、すなわち回路部３間
の絶縁スペースとなる非回路部７において照射されるも
のであり、非回路部７の少なくとも回路部３との境界領
域に非回路部７のパターンに沿って照射することによ
り、非回路部７の回路部３との境界領域のめっき下地層
である金属膜２を除去するものである。Next, the surface of the insulating substrate 1 is irradiated with an electromagnetic wave such as a laser to remove the metal film 2 as a plating underlayer in a portion irradiated with the electromagnetic wave. As a laser used as this electromagnetic wave, a second high-frequency YAG laser, a YAG laser,
An excimer laser or the like is preferable. By scanning with a galvanomirror, a portion of the surface of the insulating substrate 1 other than the circuit portion 3 where a circuit is formed, that is, a non-circuit portion serving as an insulating space between the circuit portions 3 7 and irradiates at least the boundary area of the non-circuit section 7 with the circuit section 3 along the pattern of the non-circuit section 7, thereby forming the boundary area of the non-circuit section 7 with the circuit section 3. This is for removing the metal film 2 which is a plating base layer.
【００２０】次に、回路部３に給電を行い、電気銅めっ
き、電気ニッケルめっき、電気金めっき等をおこなっ
て、所定厚の金属膜よりなるめっき膜６を形成する。こ
こで、電気めっきとしては、例えば、硫酸銅８０ｇ／リ
ットル、硫酸１８０ｇ／リットル、塩素、光沢剤の硫酸
銅めっき浴で電気銅めっきを行ったり、例えば、ワット
浴（硫酸ニッケル２７０ｇ／リットル、塩化ニッケル５
０ｇ／リットル、ほう酸４０ｇ／リットル、光沢剤）で
電気ニッケルめっきを行ったり、例えばシアン化金めっ
き浴でで電気金めっき等を行って所定厚の金属膜よりな
るめっき膜６を形成する。Next, power is supplied to the circuit section 3, and an electric copper plating, an electric nickel plating, an electric gold plating and the like are performed to form a plating film 6 made of a metal film having a predetermined thickness. Here, as the electroplating, for example, copper electroplating is performed in a copper sulfate plating bath of copper sulfate 80 g / liter, sulfuric acid 180 g / liter, chlorine and a brightener, or a watt bath (nickel sulfate 270 g / liter, chloride). Nickel 5
0 g / liter, boric acid 40 g / liter, brightener), or electroplating in a cyanide gold plating bath, for example, to form a plating film 6 of a metal film having a predetermined thickness.
【００２１】次に、めっき膜６の端面に生じる凹凸形状
の被除去物５（つまり、電磁波の照射の段階で発生した
バリ５ａ、溶着物を核としてめっきの表面に生じる凹
凸）を液体ホーニング処理により除去する。ここで、液
体ホーニングは、水等の液体中にアルミナ等のセラミッ
クス、ユリア樹脂等のプラスチック、ガラス、あるいは
細かく砕いた氷等の砥粒を混ぜたものを、図４の矢印の
ように吹き付けて行うものであり、砥粒の粒径は１００
μｍ以下、吹き付け圧力は１．５〜３Ｋｇ／ｃｍ 2 程度
が望ましく、回路部３であるめっき膜６を傷つけないよ
うに注意する必要がある。Next, the uneven shape generated on the end face of the plating film 6
To be removed 5 (that is, generated at the stage of electromagnetic wave irradiation)
Burrs 5a, recesses formed on plating surface with welds as nuclei
(Convex) is removed by a liquid honing treatment. Where the liquid
Body honing is performed by using a ceramic such as alumina in a liquid such as water.
Or plastics such as urea resin, glass, or
A mixture of finely crushed ice and other abrasive grains was added to the
The abrasive particles have a particle size of 100
μm or less, spray pressure is 1.5 to 3 kg / cm Twodegree
It is preferable that the plating film 6 which is the circuit portion 3 is not damaged.
You need to be careful.
【００２２】なお、被回路部７に残存した金属膜２は必
要に応じてソフトエッチング等で除去してもよいもので
ある。以上の方法により得られる回路板は、ブツ（突
起）等の凹凸の少ない平滑なめっき表面となる。 （実施例３）金属膜２の端面に生じるバリ５ａや溶着物
等の被除去物５を除去する工程において、図５のような
ポンチ８による圧縮加工を行う。つまり、金属膜２端面
にポンチ８を押し付け、めっき下地である金属膜２上面
を下死点となるように加圧する。これにより端面のバリ
５ａや溶着物等の被除去物５が圧縮されてめっき下地で
ある金属膜２の表面から被除去物５が除去されて平滑化
される。このバリ５ａや溶着物等の被除去物５を除去す
る工程が異なるのみで、他の方法は実施例１と同様であ
る。The metal film 2 remaining on the circuit portion 7 may be removed by soft etching or the like as necessary. The circuit board obtained by the above method has a smooth plating surface with few irregularities such as bumps (projections). (Embodiment 3) In a step of removing an object 5 to be removed such as a burr 5a or a welded substance generated on an end face of the metal film 2, a compression process using a punch 8 as shown in FIG. 5 is performed. That is, the punch 8 is pressed against the end surface of the metal film 2 and the upper surface of the metal film 2 as the plating base is pressurized so as to be a bottom dead center. As a result, the object 5 such as a burr 5a or a welded material on the end face is compressed, and the object 5 is removed from the surface of the metal film 2 which is a plating base, and is smoothed. The other method is the same as that of the first embodiment, except that the process of removing the object 5 such as the burr 5a and the deposited material is different.
【００２３】（実施例４）めっき膜６の端面に生じる凹
凸形状の被除去物５を除去する工程において、図６のよ
うなポンチ８によりポンチ加工を行う。つまり、めっき
膜６端面にポンチ８を押し付け、めっき膜６上面を下死
点となるように加圧する。これにより端面の凹凸形状の
被除去物５をが圧縮されてめっき膜６の表面から被除去
物５が除去されて平滑化される。このめっき膜６の端面
に生じる凹凸形状の被除去物５を除去する工程が異なる
のみで、他の方法は実施例２と同様である。(Embodiment 4) In the step of removing the object 5 having irregularities formed on the end face of the plating film 6, punching is performed using a punch 8 as shown in FIG. That is, the punch 8 is pressed against the end surface of the plating film 6 and the upper surface of the plating film 6 is pressurized so as to be a bottom dead center. As a result, the object 5 having an uneven shape on the end face is compressed, and the object 5 is removed from the surface of the plating film 6 and smoothed. The other method is the same as that of the second embodiment, except that the step of removing the object-to-be-removed 5 having an uneven shape generated on the end face of the plating film 6 is different.
【００２４】（実施例５）金属膜２の端面に生じるバリ
５ａや溶着物等の被除去物５を除去する工程において、
電解研磨加工を行う。例えば、図７に示すように、リン
酸１０％溶液を用いて、絶縁性基材１の表面にレーザ等
の電磁波を照射して電磁波を照射した部分のめっき下地
層である金属膜２を除去した試料体９を陽極、銅板より
なる電極１０を陰極として電流を流す。電流密度は０．
２〜５Ａ／ｄｍ2 程度、処理時間３０〜６０秒で行うの
が望ましい。この時、金属膜２の端面のバリ５ａや溶着
物の突起等の被除去物５に電流が集中して他の部分より
早く溶解するため、被除去物５が除去され、表面が平滑
化されるのである。このバリ５ａや溶着物等の被除去物
５を除去する工程が異なるのみで、他の方法は実施例１
と同様である。図中１５は電解槽であり、１６は電源で
ある。(Embodiment 5) In the step of removing an object 5 to be removed such as a burr 5a or a welded substance generated on the end face of the metal film 2,
Perform electropolishing. For example, as shown in FIG. 7, a 10% phosphoric acid solution is used to irradiate the surface of the insulating substrate 1 with an electromagnetic wave such as a laser to remove the metal film 2 which is a plating underlayer in a portion irradiated with the electromagnetic wave. An electric current is caused to flow using the sample body 9 as an anode and the electrode 10 made of a copper plate as a cathode. The current density is 0.
It is desirable to carry out in about 2 to 5 A / dm 2 and for a processing time of 30 to 60 seconds. At this time, current is concentrated on the object 5 to be removed, such as burrs 5a on the end surface of the metal film 2 and protrusions of the welded material, and dissolves faster than other portions. Therefore, the object 5 is removed and the surface is smoothed. Because The other method is the same as that of the first embodiment except that the step of removing the object 5 such as the burr 5a and the deposited material is different.
Is the same as In the figure, reference numeral 15 denotes an electrolytic cell, and 16 denotes a power supply.
【００２５】（実施例６）めっき膜６の端面に生じる凹
凸形状の被除去物５を除去する工程において、電解研磨
加工を行う。例えば、前述の実施例２のめっき膜６形成
工程の後で、図８に示すように、リン酸１０％溶液を用
いて、めっき膜６を形成した試料体９を陽極、銅板より
なる電極１０を陰極として電流を流す。電流密度は０．
２〜５Ａ／ｄｍ2 程度、処理時間３０〜６０秒で行うの
が望ましい。この時、めっき膜６の端面の被除去物５に
電流が集中して他の部分より早く溶解するため、被除去
物５が除去され、表面が平滑化されるのである。この被
除去物５を除去する工程が異なるのみで、他の方法は実
施例２と同様である。図中１５は電解槽であり、１６は
電源である。(Embodiment 6) In the step of removing the object-to-be-removed 5 formed on the end face of the plating film 6, electrolytic polishing is performed. For example, after the step of forming the plating film 6 of Example 2 described above, as shown in FIG. 8, a sample 9 on which the plating film 6 is formed is used as an anode and an electrode 10 made of a copper plate using a 10% phosphoric acid solution. Is used as a cathode to pass a current. The current density is 0.
It is desirable to carry out in about 2 to 5 A / dm 2 and for a processing time of 30 to 60 seconds. At this time, the current concentrates on the object 5 on the end face of the plating film 6 and dissolves faster than other portions, so that the object 5 is removed and the surface is smoothed. The other method is the same as that of the second embodiment except that the step of removing the object 5 is different. In the figure, reference numeral 15 denotes an electrolytic cell, and 16 denotes a power supply.
【００２６】（実施例７）金属膜２の端面に生じるバリ
５ａや溶着物等の被除去物５を除去する工程において、
電解脱脂加工を行う。すなわち、図９に示すように、キ
レート剤を５０ｇ／リットル添加した青酸ソーダ溶液２
５ｇ／リットル中に、絶縁性基材１の表面にレーザ等の
電磁波を照射して電磁波を照射した部分のめっき下地層
である金属膜２を除去した試料体９を陰極、ステンレス
板よりなる電極１０を陽極として電流を流す。電流密度
は０．２〜５Ａ／ｄｍ2 、処理時間３０〜６０秒が望ま
しい。この時、水の電気分解で絶縁性基材１の表面のめ
っき下地層である金属膜２表面に水素が発生し、その勢
いで素地金属を侵すことなく金属膜２の端面のバリ５ａ
や溶着物の突起等の被除去物５を除去して表面を平滑化
するものである。このバリ５ａや溶着物等の被除去物５
を除去する工程が異なるのみで、他の方法は実施例１と
同様である。図中１５は電解槽であり、１６は電源であ
る。(Embodiment 7) In the step of removing an object 5 such as a burr 5a or a deposited material generated on an end face of the metal film 2,
Perform electrolytic degreasing. That is, as shown in FIG. 9, a sodium cyanide solution 2 to which a chelating agent was added at 50 g / liter.
In 5 g / liter, the surface of the insulating substrate 1 was irradiated with electromagnetic waves such as a laser to remove the metal film 2 which is the plating base layer in the portion irradiated with the electromagnetic waves. An electric current is passed using 10 as an anode. The current density is preferably 0.2 to 5 A / dm 2 , and the processing time is preferably 30 to 60 seconds. At this time, hydrogen is generated on the surface of the metal film 2 which is a plating base layer on the surface of the insulating substrate 1 by the electrolysis of water, and the burr 5a on the end face of the metal film 2 is not eroded by the force.
This removes the object 5 such as a protrusion or a projection of a welded object to smooth the surface. The object 5 to be removed 5 such as the burr 5a and the weld
The other method is the same as that of the first embodiment, except that the step of removing is different. In the figure, reference numeral 15 denotes an electrolytic cell, and 16 denotes a power supply.
【００２７】（実施例８）めっき膜６の端面に生じる凹
凸形状の被除去物５を除去する工程において、電解脱脂
加工を行う。すなわち、前述の実施例２のめっき膜６形
成工程の後で、図１０に示すように、キレート剤を５０
ｇ／リットル添加した青酸ソーダ溶液２５ｇ／リットル
中に、めっき膜６を形成した試料体９を陰極、ステンレ
ス板よりなる電極１０を陽極として電流を流す。電流密
度は０．２〜５Ａ／ｄｍ2 、処理時間３０〜６０秒が望
ましい。この時、水の電気分解でめっき膜６表面に水素
が発生し、その勢いで素地金属を侵すことなくめっき膜
６の端面の凹凸形状の被除去物５を除去して平滑化する
ものである。この被除去物５を除去する工程が異なるの
みで、他の方法は実施例２と同様である。図中１５は電
解槽であり、１６は電源である。(Embodiment 8) In the step of removing the uneven object 5 to be formed on the end face of the plating film 6, electrolytic degreasing is performed. That is, as shown in FIG. 10, after the step of forming the plating film 6 of the second embodiment, the chelating agent is
A current is passed through 25 g / liter of a sodium cyanide solution added with g / liter using the sample body 9 on which the plating film 6 is formed as a cathode and the electrode 10 made of a stainless steel plate as an anode. The current density is preferably 0.2 to 5 A / dm 2 , and the processing time is preferably 30 to 60 seconds. At this time, hydrogen is generated on the surface of the plating film 6 by the electrolysis of water, and the unevenness of the end surface of the plating film 6 is removed and smoothed without removing the base metal by vigor. . The other method is the same as that of the second embodiment except that the step of removing the object 5 is different. In the figure, reference numeral 15 denotes an electrolytic cell, and 16 denotes a power supply.
【００２８】（実施例９）金属膜２の端面に生じるバリ
５ａや溶着物等の被除去物５を除去する工程において、
プラズマエッチング加工を行う。すなわち、イオン化し
たガスを図１１の矢印のように当てて金属膜２の端面の
バリ５ａや溶着物等の被除去物５を除去するものであ
る。プラズマの条件は、図１１のように平行平板型プラ
ズマ装置１７内に絶縁性基材１の表面にレーザ等の電磁
波を照射して電磁波を照射した部分のめっき下地層であ
る金属膜２を除去した試料体９を入れ、０．００１Ｔｏ
ｒｒまで真空排気した後、アルゴンガスを導入して真空
度を０．１Ｔｏｒｒとし、ＲＦパワー３００Ｗにてプラ
ズマを発生させ、３分の処理を行って金属膜２の端面の
バリ５ａや溶着物等の被除去物５を除去するものであ
る。このバリ５ａや溶着物等の被除去物５を除去する工
程が異なるのみで、他の方法は実施例１と同様である。(Embodiment 9) In the step of removing an object 5 such as a burr 5a or a deposited material generated on the end face of the metal film 2,
Plasma etching is performed. That is, the ionized gas is applied as shown by the arrow in FIG. 11 to remove the object 5 such as the burr 5a and the deposited material on the end face of the metal film 2. As shown in FIG. 11, the surface of the insulating substrate 1 is irradiated with electromagnetic waves such as a laser in the parallel plate type plasma apparatus 17 as shown in FIG. Put the sample body 9
After evacuating to rr, an argon gas was introduced to reduce the degree of vacuum to 0.1 Torr, plasma was generated at an RF power of 300 W, and processing was performed for 3 minutes, and burrs 5a and welds on the end face of the metal film 2 were formed. The object 5 to be removed is removed. The other method is the same as that of the first embodiment, except that the process of removing the object 5 such as the burr 5a and the deposited material is different.
【００２９】（実施例１０）めっき膜６の端面に生じる
凹凸形状の被除去物５を除去する工程において、電解脱
脂加工を行う。すなわち、イオン化したガスを図１２の
矢印のように当ててめっき膜６の端面の凹凸形状の被除
去物５を除去するものである。プラズマの条件は、図１
２のように平行平板型プラズマ装置１７内にめっき膜６
を形成した試料体９を入れ、０．００１Ｔｏｒｒまで真
空排気した後、アルゴンガスを導入して真空度を０．１
Ｔｏｒｒとし、ＲＦパワー３００Ｗにてプラズマは発生
させ、３分の処理を行ってめっき膜６の端面の凹凸形状
の被除去物５を除去するものである。この被除去物５を
除去する工程が異なるのみで、他の方法は実施例２と同
様である。(Embodiment 10) In the step of removing the object-to-be-removed 5 having an uneven shape generated on the end face of the plating film 6, electrolytic degreasing is performed. In other words, the ionized gas is applied as shown by the arrow in FIG. 12 to remove the object 5 having an uneven shape on the end face of the plating film 6. The plasma conditions are shown in Figure 1.
2, the plating film 6 is placed in the parallel plate type plasma device 17.
The sample body 9 formed was filled and evacuated to 0.001 Torr, and then argon gas was introduced to reduce the degree of vacuum to 0.1.
At Torr, plasma is generated at an RF power of 300 W, and a process for three minutes is performed to remove the object 5 having an uneven shape on the end face of the plating film 6. The other method is the same as that of the second embodiment except that the step of removing the object 5 is different.
【００３０】次に、図１３に基づいて本発明の他の実施
形態につき説明する。本実施形態は、まず、図１３
（ａ）の示すように絶縁性基材１の表面にめっき処理の
下地となる金属膜２を設ける。その後、図１３（ｂ）の
ように少なくとも回路部３の輪郭にレーザ等の電磁波４
を照射することによって、照射部の金属膜２を除去す
る。その後、電気めっきで回路部３の膜厚形成と同時に
金属膜２の端面に生じるバリ、溶着物等の被除去物５を
除去することで図１３（ｃ）のような回路板を形成する
のである。Next, another embodiment of the present invention will be described with reference to FIG. In the present embodiment, first, FIG.
As shown in (a), a metal film 2 serving as a base for a plating process is provided on the surface of an insulating substrate 1. Thereafter, as shown in FIG. 13B, at least the outline of the circuit portion 3 is covered with an electromagnetic wave 4 such as a laser.
Is irradiated, thereby removing the metal film 2 in the irradiated portion. Thereafter, the circuit board as shown in FIG. 13 (c) is formed by removing the objects 5 such as burrs and welds generated on the end face of the metal film 2 simultaneously with the formation of the film thickness of the circuit portion 3 by electroplating. is there.
【００３１】以下、本実施形態の具体例を実施例１１と
して詳述する。 （実施例１１）ポリイミド、ポリアミド、ポリエーテル
イミド、液晶ポリマー等の電気絶縁性材料を射出成形し
て絶縁性基材１を形成する。このようにして得た絶縁性
基材１をアルカリ脱脂した後、絶縁性基材１の表面をプ
ラズマ処理して表面を活性化及び微細な粗面化を行い、
その後、絶縁性基材１の表面にスパッタリング、真空蒸
着等により銅、銀、金、ニッケル、白金、パラジウム等
の金属を成膜して絶縁性基材１の表面にめっき処理の下
地となる金属膜２を設ける。この金属膜２の厚みは０．
１〜２μｍ程度である。Hereinafter, a specific example of this embodiment will be described in detail as an eleventh embodiment. (Example 11) An insulating base material 1 is formed by injection-molding an electrically insulating material such as polyimide, polyamide, polyetherimide, and liquid crystal polymer. After alkali-degreasing the insulating substrate 1 thus obtained, the surface of the insulating substrate 1 is plasma-treated to activate and finely roughen the surface,
Then, a metal such as copper, silver, gold, nickel, platinum, or palladium is formed on the surface of the insulating substrate 1 by sputtering, vacuum deposition, or the like, and a metal serving as a base for plating is formed on the surface of the insulating substrate 1. A membrane 2 is provided. The thickness of the metal film 2 is 0.1 mm.
It is about 1-2 μm.
【００３２】次に、絶縁性基材１の表面にレーザ等の電
磁波を照射して電磁波を照射した部分のめっき下地層で
ある金属膜２を除去する。この電磁波として用いるレー
ザとしては、第２高周波ＹＡＧレーザ、ＹＡＧレーザ、
エキシマレーザ等が好ましく、ガルバノミラーで走査す
ることにより、絶縁性基材１の表面のうち回路を形成す
る箇所である回路部３以外の部分、すなわち回路部３間
の絶縁スペースとなる非回路部７において照射されるも
のであり、非回路部７の少なくとも回路部３との境界領
域に非回路部７のパターンに沿って照射することによ
り、非回路部７の回路部３との境界領域のめっき下地層
である金属膜２を除去するものである。Next, the surface of the insulating substrate 1 is irradiated with an electromagnetic wave such as a laser to remove the metal film 2 which is the plating underlayer in the portion irradiated with the electromagnetic wave. As a laser used as this electromagnetic wave, a second high-frequency YAG laser, a YAG laser,
An excimer laser or the like is preferable. By scanning with a galvanomirror, a portion of the surface of the insulating substrate 1 other than the circuit portion 3 where a circuit is formed, that is, a non-circuit portion serving as an insulating space between the circuit portions 3 7 and irradiates at least the boundary area of the non-circuit section 7 with the circuit section 3 along the pattern of the non-circuit section 7, thereby forming the boundary area of the non-circuit section 7 with the circuit section 3. This is for removing the metal film 2 which is a plating base layer.
【００３３】次に、回路部３に給電をおこなって電気め
っきをするのであるが、この電気めっきに当たって、図
１４のように＋−を交互に反転するＰＲ印加電圧をかけ
て電気めっき（電気銅めっき）を行う。例えば硫酸銅８
０ｇ／リットル、硫酸１８０ｇ／リットル、塩素、光沢
剤の硫酸銅めっき浴で、絶縁性基材１の表面にレーザ等
の電磁波を照射して電磁波を照射した部分のめっき下地
層である金属膜２を除去した試料体９側が＋極の時、１
５Ｖ、０．１秒の高い電圧で試料体９の金属膜２の端面
のバリ５ａや溶着物等の被除去物５に電解集中を起こさ
せ、該金属膜２の端面のバリ５ａや溶着物等の被除去物
５の銅を溶解させるものである。また、試料体９側が−
極の時、電圧−３Ｖで１秒の通常の電圧で溶液中の銅イ
オンを回路部３全体に析出させる。これを図１４のよう
に交互に行い、金属膜２の端面のバリ５ａや溶着物等の
被除去物５を除去しながら所定厚のめっき膜６を形成す
るのである。なお、被回路部７に残存した金属膜２は必
要に応じてソフトエッチング等で除去してもよいもので
ある。また、必要に応じてワット浴（硫酸ニッケル２７
０ｇ／リットル、塩化ニッケル５０ｇ／リットル、ホウ
酸４０ｇ／リットル、光沢剤）の電気ニッケルめっき、
電気金めっき等をおこなってもよいものである。Next, power is supplied to the circuit section 3 to perform electroplating. In this electroplating, as shown in FIG. 14, a PR applied voltage in which + and-are alternately reversed is applied by electroplating (electroplating). Plating). For example, copper sulfate 8
In a copper sulfate plating bath of 0 g / liter, sulfuric acid 180 g / liter, chlorine, and a brightener, the surface of the insulating substrate 1 is irradiated with electromagnetic waves such as a laser and the like, and the metal film 2 is a plating base layer in a portion where the electromagnetic waves are irradiated. When the sample body 9 side from which
At a high voltage of 5 V and 0.1 second, the burrs 5a on the end face of the metal film 2 of the sample body 9 and the object 5 to be removed such as a welded substance are concentrated on the object 5 to be removed, and the burrs 5a and the welded substance on the end face of the metal film 2 are caused. And the like to dissolve the copper of the object 5 to be removed. The sample body 9 side is-
At the time of the pole, the copper ions in the solution are deposited on the entire circuit section 3 at a normal voltage of -3 V for 1 second. This is alternately performed as shown in FIG. 14, and the plating film 6 having a predetermined thickness is formed while removing the removal target 5 such as the burr 5a and the deposited material on the end face of the metal film 2. The metal film 2 remaining on the circuit portion 7 may be removed by soft etching or the like as necessary. If necessary, use a watt bath (nickel sulfate 27).
0 g / l, nickel chloride 50 g / l, boric acid 40 g / l, brightener)
Electrogold plating or the like may be performed.
【００３４】以上の方法により得られる回路板は、ブツ
（突起）等の凹凸の少ない平滑なめっき表面となる。次
に、図１５に基づいて本発明の更に他の実施形態につき
説明する。本実施形態は、まず、絶縁性基材１の回路部
３に対応する部分をめっき処理の下地となる金属膜２と
の密着力の強い絶縁性基材１ａで形成すると共に非回路
部７を金属膜２との密着力の弱い絶縁性基材１ｂで形成
する。この場合、例えば図１５（ａ）のように、非回路
部７を金属膜２との密着力の弱い絶縁基材１ｂで一次成
形し、次に、この金属膜２との密着力の弱い絶縁基材１
ｂをベースとして回路部３に対応する部分を図１５
（ｂ）のように金属膜２との密着力の強い絶縁基材１ａ
により２次成形するか、あるいは、図１５（ａ）′のよ
うに、回路部３を金属膜２との密着力の強い絶縁基材１
ａで一次成形し、次に、この金属膜２との密着力の強い
絶縁基材１ａをベースとして非回路部７に対応する部分
を図１５（ｂ）脱脂のように金属膜２との密着力の弱い
絶縁基材１ｂにより２次成形するものである。次に、上
記の構成の絶縁性基材１の表面に図１５（ｃ）のように
めっき処理の下地となる金属膜２を形成する。次に、図
１５（ｄ）のように少なくとも回路部３の輪郭にレーザ
等の電磁波４を照射することによって、照射部の金属膜
２を除去した後、図１５（ｅ）に示すように回路部３に
電気めっきによりめっきを施すことで、回路板を製造す
るのである。The circuit board obtained by the above method has a smooth plated surface with few irregularities such as bumps (projections). Next, still another embodiment of the present invention will be described with reference to FIG. In the present embodiment, first, a portion corresponding to the circuit portion 3 of the insulating base material 1 is formed of the insulating base material 1a having strong adhesion to the metal film 2 serving as a base of the plating process, and the non-circuit portion 7 is formed. It is formed of an insulating substrate 1b having a weak adhesion to the metal film 2. In this case, for example, as shown in FIG. 15A, the non-circuit portion 7 is primarily formed with an insulating base material 1b having a weak adhesion to the metal film 2, and then an insulating material having a weak adhesion to the metal film 2 is formed. Substrate 1
FIG. 15 shows a portion corresponding to the circuit portion 3 based on FIG.
(B) an insulating substrate 1a having a strong adhesion to the metal film 2
15a ', or as shown in FIG. 15A', the circuit portion 3 is made of an insulating base material 1 having a strong adhesion to the metal film 2.
a), and a portion corresponding to the non-circuit portion 7 based on the insulating base material 1a having a strong adhesion to the metal film 2 is adhered to the metal film 2 as shown in FIG. The secondary molding is performed using the insulating base material 1b having a weak force. Next, as shown in FIG. 15C, a metal film 2 serving as a base for plating is formed on the surface of the insulating base material 1 having the above configuration. Next, as shown in FIG. 15D, at least the contour of the circuit portion 3 is irradiated with an electromagnetic wave 4 such as a laser to remove the metal film 2 in the irradiated portion, and then, as shown in FIG. The circuit board is manufactured by plating the part 3 by electroplating.
【００３５】以下、本実施形態の具体例を実施例１２と
して詳述する。 （実施例１２）まず、図１５（ａ）のように、第１成形
によりポリイミド、ポリアミド等の金属膜２との密着力
の強い電気絶縁性材料を射出成形して金属膜２との密着
性の強い絶縁性基材１ａを形成する。次に、この金属膜
２との密着性の強い絶縁性基材１ａをベースとして２次
成形でポリエーテルイミド、液晶ポリマー等の金属膜２
との密着力の弱い電気絶縁材料を射出成形して金属膜２
との密着性の弱い絶縁基材１ｂを成形して、回路部３に
対応する部分がめっき処理の下地となる金属膜との密着
力の強い絶縁性基材１ａとなり且つ非回路部７を金属膜
との密着力の弱い絶縁性基材１ｂとなった絶縁性基材１
を形成する（図１５（ｂ）参照）。次に、上記の構成の
絶縁性基材１をアルカリ脱脂した後、絶縁性基材１の表
面をプラズマ処理して表面の活性化及び微細な粗面化を
行う。その後、絶縁性基材１の表面にスパッタリング、
真空蒸着等により銅、銀、金、ニッケル、白金、パラジ
ウム等の金属を成膜して図１５（ｃ）のように絶縁性基
材１の表面にめっき処理の下地となる金属膜２を設け
る。この金属膜２の厚みは０．１〜２μｍ程度である。Hereinafter, a specific example of this embodiment will be described in detail as a twelfth embodiment. (Embodiment 12) First, as shown in FIG. 15 (a), an electrically insulating material having strong adhesion to the metal film 2, such as polyimide or polyamide, is injection-molded by the first molding to form an adhesion to the metal film 2. The insulating base material 1a having high strength is formed. Next, based on the insulating substrate 1a having strong adhesion to the metal film 2, the metal film 2 of polyetherimide, liquid crystal polymer or the like is formed by secondary molding.
Injection molding an electrically insulating material with low adhesion to the metal film 2
An insulating base material 1b having low adhesion to the metal part is formed, and a portion corresponding to the circuit part 3 becomes an insulating base material 1a having a strong adhesion to a metal film serving as a base for plating, and the non-circuit part 7 is formed of metal. Insulating base material 1 serving as insulating base material 1b having weak adhesion to film
Is formed (see FIG. 15B). Next, after the insulating substrate 1 having the above configuration is alkali-degreased, the surface of the insulating substrate 1 is plasma-treated to activate and finely roughen the surface. Then, sputtering is performed on the surface of the insulating substrate 1,
A metal such as copper, silver, gold, nickel, platinum and palladium is formed by vacuum deposition or the like, and a metal film 2 serving as a base for plating is provided on the surface of the insulating substrate 1 as shown in FIG. . The thickness of the metal film 2 is about 0.1 to 2 μm.
【００３６】次に、図１５（ｄ）のように、絶縁性基材
１の表面にレーザ等の電磁波４を照射して電磁波を照射
した部分のめっき下地層である金属膜２を除去する。こ
の電磁波４として用いるレーザとしては、第２高周波Ｙ
ＡＧレーザ、ＹＡＧレーザ、エキシマレーザ等が好まし
く、ガルバノミラーで走査することにより、絶縁性基材
１の表面のうち回路を形成する箇所である回路部３以外
の部分、すなわち回路部３間の絶縁スペースとなる非回
路部７において照射されるものであり、非回路部７の少
なくとも回路部３との境界領域に非回路部７のパターン
に沿って照射することにより、非回路部７の回路部３と
の境界領域のめっき下地層である金属膜２を除去するも
のである。上記のようにレーザ等の電磁波４を照射する
と、非回路部３の金属膜２は溶ける前に密着力の弱い絶
縁性基材１ｂに対して浮き上がって剥がれてしまうの
で、バリが発生することなく簡単且つ正確に非回路部７
の回路部３との境界領域のめっき下地層である金属膜２
が除去されることになる。したがって、本実施例におい
ては、レーザ等の電磁波４を照射しても回路部３の端面
にバリや溶着物が発生しないものである。Next, as shown in FIG. 15D, the surface of the insulating substrate 1 is irradiated with an electromagnetic wave 4 such as a laser, and the metal film 2 which is the plating underlayer in the portion irradiated with the electromagnetic wave is removed. The laser used as the electromagnetic wave 4 is a second high frequency Y
An AG laser, a YAG laser, an excimer laser, or the like is preferable. By scanning with a galvanomirror, a portion other than the circuit portion 3 where a circuit is formed on the surface of the insulating substrate 1, that is, insulation between the circuit portions 3. Irradiation is performed in the non-circuit portion 7 serving as a space, and at least a boundary region between the non-circuit portion 7 and the circuit portion 3 is irradiated along the pattern of the non-circuit portion 7 so that the circuit portion of the non-circuit portion 7 is irradiated. 3 is to remove the metal film 2 which is the plating underlayer in the boundary region with the metal film 2. When the electromagnetic wave 4 such as a laser is irradiated as described above, the metal film 2 of the non-circuit portion 3 floats and peels off from the insulating base material 1b having a weak adhesive force before being melted. Non-circuit part 7 easily and accurately
Film 2 serving as a plating underlayer in a boundary region with circuit portion 3 of FIG.
Will be removed. Therefore, in this embodiment, even when the electromagnetic wave 4 such as a laser is irradiated, no burr or welded matter is generated on the end face of the circuit section 3.
【００３７】上記のようにして非回路部７の回路部３と
の境界領域のめっき下地層である金属膜２を除去した
後、回路部３に給電を行い、例えば硫酸銅８０ｇ／リッ
トル、塩素、光沢剤の硫酸銅めっき浴で電気銅めっきを
行い、又は例えばワット浴（硫酸ニッケル２７０ｇ／リ
ットル、塩化ニッケル５０ｇ／リットル、ホウ酸４０ｇ
／リットル、光沢剤）の電気ニッケルめっきを行い、又
はシアン化金めっき浴で電気金めっきを行って、図１５
（ｅ）に示すように所定厚の金属膜よりなるめっき膜６
を形成して回路板を形成する。なお、被回路部７に残存
した金属膜２は必要に応じてソフトエッチング等で除去
してもよいものである。After removing the metal film 2 which is the plating base layer in the boundary region between the non-circuit portion 7 and the circuit portion 3 as described above, power is supplied to the circuit portion 3 and, for example, copper sulfate 80 g / l, chlorine Electroplating in a copper sulfate plating bath of brightener, or for example a Watts bath (270 g / l nickel sulfate, 50 g / l nickel chloride, 40 g boric acid)
/ Liter, brightener) or electrogold plating in a gold cyanide plating bath, FIG.
As shown in (e), a plating film 6 made of a metal film having a predetermined thickness.
Is formed to form a circuit board. The metal film 2 remaining on the circuit portion 7 may be removed by soft etching or the like as necessary.
【００３８】以上の方法により得られる回路板は、ブツ
（突起）等の凹凸の少ない平滑なめっき表面となる。The circuit board obtained by the above method has a smooth plating surface with few irregularities such as bumps (projections).
【００３９】[0039]
【発明の効果】本発明の請求項１記載の発明にあって
は、上述のように、絶縁性基材の表面にめっき処理の下
地となる金属膜を設け、少なくとも回路部の輪郭にレー
ザ等の電磁波を照射することによって照射部の金属膜を
除去し、その後、金属膜の端面に生じるバリ、溶着物等
の被除去物を除去し、その後に回路部にめっきを施すの
で、レーザ等の電磁波の照射により生じるバリや溶着物
を除去して回路板の不良の原因を解消し、高品質の回路
板を製造することができ、また、バリや溶着物を除去す
るので歩留りを上げて生産性を向上することができるも
のである。According to the invention of claim 1 of the present invention, as described above, a metal film serving as a base for plating is provided on the surface of the insulating base material, and at least a laser or the like is provided on the contour of the circuit portion. By removing the metal film of the irradiated part by irradiating the electromagnetic wave of, after that, to remove the burrs generated on the end face of the metal film, the object to be removed such as welding, and then plating the circuit part, such as laser Eliminates burrs and welds caused by electromagnetic wave irradiation to eliminate the cause of circuit board failures and manufacture high quality circuit boards.Also removes burrs and welds to increase production yield It is possible to improve the performance.
【００４０】また、請求項２記載の発明にあっては、上
述のように、絶縁性基材の表面にめっき処理の下地とな
る金属膜を設け、少なくとも回路部の輪郭にレーザ等の
電磁波を照射することによって照射部の金属膜を除去
し、その後、回路部にめっきを施し、その後、めっき膜
の端面に生じる凹凸形状の被除去物を除去するので、電
磁波の照射により金属膜の端面に生じるバリ、溶着物等
を残したまま回路部にめっきを施すことによって、バ
リ、溶着物等を核としてめっき膜表面にめっきのブツ
（突起）や凹凸形状が生じてもこれが除去された高品質
の回路板を製造することができ、また、バリや溶着物を
除去するので歩留りを上げて生産性を向上することがで
きるものである。According to the second aspect of the present invention, as described above, a metal film serving as a base for plating is provided on the surface of the insulating base material, and electromagnetic waves such as laser are applied to at least the contour of the circuit portion. Irradiation removes the metal film of the irradiated part, then plating the circuit part, and then removes the uneven removal object generated on the end face of the plating film. The plating is applied to the circuit while leaving the generated burrs and deposits, so that even if bumps (protrusions) or irregularities of plating occur on the surface of the plating film with the burrs or welds as nuclei, high quality is removed. The circuit board of the present invention can be manufactured, and since the burrs and the deposits are removed, the yield can be increased and the productivity can be improved.
【００４１】また、請求項３記載の発明にあっては、上
述の請求項１又は請求項２記載の発明の効果に加えて、
研磨材を入れた液体を噴射する液体ホーニング処理によ
り被除去物を除去するので、液体ホーニング処理という
簡単な方法により被除去物を除去することができるもの
である。また、請求項４記載の発明にあっては、上述の
請求項１又は請求項２記載の発明の効果に加えて、ポン
チ加工により被除去物を除去するので、ポンチ加工とい
う簡単な方法により被除去物を除去することができるも
のである。According to the third aspect of the present invention, in addition to the effects of the first or second aspect of the present invention,
Since the object to be removed is removed by a liquid honing process in which a liquid containing an abrasive is sprayed, the object to be removed can be removed by a simple method called a liquid honing process. Further, in the invention according to claim 4, in addition to the effects of the invention described in claim 1 or 2, the object to be removed is removed by punching, so that the object is removed by a simple method called punching. It can remove the removed matter.
【００４２】また、請求項５記載の発明にあっては、上
述の請求項１又は請求項２記載の発明の効果に加えて、
電解研磨により被除去物を除去するので、電解研磨とい
う簡単な方法により被除去物を除去することができるも
のである。また、請求項６記載の発明にあっては、上述
の請求項１又は請求項２記載の発明の効果に加えて、電
解脱脂により被除去物を除去するので、電解脱脂という
簡単な方法により被除去物を除去することができるもの
である。According to the fifth aspect of the present invention, in addition to the effects of the first or second aspect of the present invention,
Since the object to be removed is removed by electrolytic polishing, the object to be removed can be removed by a simple method called electrolytic polishing. In the invention according to claim 6, in addition to the effects of the invention described in claim 1 or 2, the object to be removed is removed by electrolytic degreasing, so that the object is removed by a simple method called electrolytic degreasing. It can remove the removed matter.
【００４３】また、請求項７記載の発明にあっては、上
述の請求項１又は請求項２記載の発明の効果に加えて、
プラズマ処理により被除去物を除去するので、プラズマ
処理という簡単な方法により被除去物を除去することが
できるものである。また、請求項８記載の発明にあって
は、上述のように絶縁性基材の表面にめっき処理の下地
となる金属膜を設け、少なくとも回路部の輪郭にレーザ
等の電磁波を照射することによって照射部の金属膜を除
去し、その後、電気めっきで回路部の膜厚形成と同時に
金属膜の端面に生じるバリ、溶着物等の被除去物を除去
するので、金属膜の端面に生じたバリ、溶着物等の被除
去物を除去しながら同時に電気めっきで回路部のめっき
膜を形成することができて、レーザ等の電磁波の照射に
より生じるバリや溶着物を除去して回路板の不良の原因
を解消し、高品質の回路板を製造することができ、ま
た、バリや溶着物を除去するので歩留りを上げて生産性
を向上することができ、しかも、被除去物の除去と回路
部のめっき膜の形成とが同時に行えるので、簡単な方法
で回路板の生産に要する時間が短くなってより生産性が
向上することになる。According to the seventh aspect of the present invention, in addition to the effects of the first or second aspect of the present invention,
Since the object to be removed is removed by plasma treatment, the object to be removed can be removed by a simple method called plasma treatment. Further, in the invention according to claim 8, as described above, a metal film serving as a base for plating is provided on the surface of the insulating base material, and at least the contour of the circuit portion is irradiated with an electromagnetic wave such as a laser. The metal film in the irradiated area is removed, and then, after forming the film thickness of the circuit section by electroplating, the objects to be removed such as burrs and welds generated on the end face of the metal film are removed. In addition, it is possible to form a plating film of a circuit portion by electroplating while removing an object to be removed such as a deposited material, and to remove burrs and a deposited material caused by irradiation of an electromagnetic wave such as a laser to remove a defect of a circuit board. The cause can be eliminated, and a high quality circuit board can be manufactured. Also, since burrs and deposits are removed, the yield can be increased and productivity can be improved. Can be formed at the same time , So that the time required for the production of a circuit board in a simple manner is improved more productive shortened.
【００４４】また、請求項９記載の発明にあっては、上
述のように絶縁性基材の回路部に対応する部分をめっき
処理の下地となる金属膜との密着力の強い絶縁性基材で
形成すると共に非回路部を金属膜との密着力の弱い絶縁
性基材で形成し、この絶縁性基材の表面にめっき処理の
下地となる金属膜を設け、少なくとも回路部の輪郭にレ
ーザ等の電磁波を照射することによって照射部の金属膜
を除去し、その後、回路部にめっきを施すので、レーザ
等の電磁波を照射すると、非回路部の金属膜は溶ける前
に密着力の弱い絶縁性基材に対して浮き上がって剥がれ
てしまうって、バリが発生しないものであり、この結
果、回路板の不良がなく、高品質の回路板を製造するこ
とができ、また、バリや溶着物が発生しないので歩留り
を上げて生産性を向上することができるものである。According to the ninth aspect of the present invention, as described above, the portion of the insulating substrate corresponding to the circuit portion has a strong adhesion to the metal film serving as a base for plating. In addition, the non-circuit portion is formed of an insulating base material having a weak adhesion to the metal film, and a metal film serving as a base for plating is provided on the surface of the insulating base material, and a laser is formed at least on the contour of the circuit portion. The metal film in the irradiated part is removed by irradiating an electromagnetic wave such as that described above, and then the circuit part is plated.Therefore, when irradiating an electromagnetic wave such as a laser, the metal film in the non-circuit part has a weak adhesion before being melted. No burrs are generated by floating and peeling off the conductive base material. As a result, there is no failure of the circuit board, and a high-quality circuit board can be manufactured. Increase yield and increase productivity It is those that can be.
【図１】本発明の一方法の製造順序を示す概略図であ
る。FIG. 1 is a schematic diagram showing a manufacturing sequence of one method of the present invention.
【図２】本発明の他の方法の製造順序を示す概略図であ
る。FIG. 2 is a schematic view showing a manufacturing sequence of another method of the present invention.
【図３】同上の被除去物を除去する一例を示す説明図で
ある。FIG. 3 is an explanatory diagram showing an example of removing an object to be removed according to the embodiment.
【図４】同上の被除去物を除去する他例を示す説明図で
ある。FIG. 4 is an explanatory view showing another example of removing an object to be removed according to the embodiment.
【図５】同上の被除去物を除去する更に他例を示す説明
図である。FIG. 5 is an explanatory view showing still another example of removing an object to be removed according to the embodiment.
【図６】同上の被除去物を除去する更に他例を示す説明
図である。FIG. 6 is an explanatory view showing still another example of removing an object to be removed according to the embodiment.
【図７】同上の被除去物を除去する更に他例を示す説明
図である。FIG. 7 is an explanatory view showing still another example of removing an object to be removed according to the embodiment.
【図８】同上の被除去物を除去する更に他例を示す説明
図である。FIG. 8 is an explanatory view showing still another example of removing an object to be removed according to the embodiment.
【図９】同上の被除去物を除去する更に他例を示す説明
図である。FIG. 9 is an explanatory view showing still another example of removing an object to be removed according to the embodiment.
【図１０】同上の被除去物を除去する更に他例を示す説
明図である。FIG. 10 is an explanatory view showing still another example of removing an object to be removed according to the embodiment.
【図１１】同上の被除去物を除去する更に他例を示す説
明図である。FIG. 11 is an explanatory view showing still another example of removing an object to be removed according to the embodiment.
【図１２】同上の被除去物を除去する更に他例を示す説
明図である。FIG. 12 is an explanatory view showing still another example of removing an object to be removed according to the embodiment.
【図１３】本発明の更に他の方法の製造順序を示す概略
図である。FIG. 13 is a schematic view showing a manufacturing sequence of still another method of the present invention.
【図１４】同上の電気めっきにおける電圧波形を示す波
形図である。FIG. 14 is a waveform chart showing a voltage waveform in the electroplating of the above.
【図１５】本発明の更に他の方法の製造順序を示す概略
図である。FIG. 15 is a schematic view showing a manufacturing sequence of still another method of the present invention.
【図１６】従来例の製造順序を示す概略図である。FIG. 16 is a schematic view showing a manufacturing sequence of a conventional example.
１ 絶縁性基材 １ａ 絶縁性基材 １ｂ 絶縁性基材 ２ 金属膜 ３ 回路部 ４ 電磁波 ５ 被除去物 ６ めっき膜 ７ 非回路部 DESCRIPTION OF SYMBOLS 1 Insulating base material 1a Insulating base material 1b Insulating base material 2 Metal film 3 Circuit part 4 Electromagnetic wave 5 Object to be removed 6 Plating film 7 Non-circuit part
───────────────────────────────────────────────────── フロントページの続き (72)発明者 内野々 良幸 大阪府門真市大字門真1048番地松下電工株 式会社内 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Yoshiyuki Uchino 1048 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Works, Ltd.
Claims (9)
なる金属膜を設け、少なくとも回路部の輪郭にレーザ等
の電磁波を照射することによって照射部の金属膜を除去
し、その後、金属膜の端面に生じるバリ、溶着物等の被
除去物を除去し、その後に回路部にめっきを施すことを
特徴とする回路板の製造方法。A metal film serving as a base for a plating process is provided on a surface of an insulating substrate, and at least a contour of a circuit portion is irradiated with an electromagnetic wave such as a laser to remove the metal film in the irradiated portion. A method of manufacturing a circuit board, comprising: removing an object to be removed such as a burr and a welded substance generated on an end face of a film; and thereafter plating the circuit portion.
なる金属膜を設け、少なくとも回路部の輪郭にレーザ等
の電磁波を照射することによって照射部の金属膜を除去
し、その後、回路部にめっきを施し、その後、めっき膜
の端面に生じる凹凸形状の被除去物を除去することを特
徴とする回路板の製造方法。2. A metal film serving as a base for a plating process is provided on a surface of an insulating base material, and at least a contour of a circuit portion is irradiated with an electromagnetic wave such as a laser to remove the metal film in the irradiated portion. A method for producing a circuit board, comprising: plating a portion; and thereafter removing an object to be removed having an uneven shape generated on an end surface of the plating film.
ニング処理により被除去物を除去することを特徴とする
請求項１又は請求項２記載の回路板の製造方法。3. The method for manufacturing a circuit board according to claim 1, wherein the object to be removed is removed by a liquid honing process for jetting a liquid containing an abrasive.
とを特徴とする請求項１又は請求項２記載の回路板の製
造方法。4. The method for manufacturing a circuit board according to claim 1, wherein the object to be removed is removed by punching.
を特徴とする請求項１又は請求項２記載の回路板の製造
方法。5. The method for manufacturing a circuit board according to claim 1, wherein the object to be removed is removed by electrolytic polishing.
を特徴とする請求項１又は請求項２記載の回路板の製造
方法。6. The method for manufacturing a circuit board according to claim 1, wherein the object to be removed is removed by electrolytic degreasing.
ことを特徴とする請求項１又は請求項２記載の回路板の
製造方法。7. The method for manufacturing a circuit board according to claim 1, wherein the object to be removed is removed by a plasma treatment.
なる金属膜を設け、少なくとも回路部の輪郭にレーザ等
の電磁波を照射することによって照射部の金属膜を除去
し、その後、電気めっきで回路部の膜厚形成と同時に金
属膜の端面に生じるバリ、溶着物等の被除去物を除去す
ることを特徴とする回路板の製造方法。8. A metal film serving as a base for plating treatment is provided on the surface of the insulating base material, and at least the contour of the circuit portion is irradiated with electromagnetic waves such as laser to remove the metal film in the irradiated portion. A method of manufacturing a circuit board, comprising: removing an object to be removed such as a burr and a welded substance generated on an end face of a metal film at the same time as forming a film thickness of a circuit portion by plating.
っき処理の下地となる金属膜との密着力の強い絶縁性基
材で形成すると共に非回路部を金属膜との密着力の弱い
絶縁性基材で形成し、この絶縁性基材の表面にめっき処
理の下地となる金属膜を設け、少なくとも回路部の輪郭
にレーザ等の電磁波を照射することによって照射部の金
属膜を除去し、その後、回路部にめっきを施すことを特
徴とする回路板の製造方法。9. A portion corresponding to a circuit portion of an insulating base material is formed of an insulating base material having a strong adhesion to a metal film serving as a base for plating, and a non-circuit portion is formed of an adhesion strength to a metal film. Formed with a weak insulating base material, a metal film to be a base for plating is provided on the surface of the insulating base material, and at least the outline of the circuit portion is irradiated with an electromagnetic wave such as a laser to remove the metal film of the irradiated portion. And thereafter, plating the circuit portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6359197A JPH10261862A (en) | 1997-03-17 | 1997-03-17 | Manufacture of circuit board |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6359197A JPH10261862A (en) | 1997-03-17 | 1997-03-17 | Manufacture of circuit board |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10261862A true JPH10261862A (en) | 1998-09-29 |
Family
ID=13233675
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6359197A Withdrawn JPH10261862A (en) | 1997-03-17 | 1997-03-17 | Manufacture of circuit board |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10261862A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011249451A (en) * | 2010-05-25 | 2011-12-08 | Nec Tohoku Ltd | Method of forming dam for damming upper stream body of printed wiring board, dam, and printed wiring board |
| JP2016152324A (en) * | 2015-02-18 | 2016-08-22 | Ｄｏｗａメタルテック株式会社 | Method for manufacturing metal-ceramic circuit board |
| US20210139321A1 (en) * | 2019-11-08 | 2021-05-13 | Massachusetts Institute Of Technology | Laser-Assisted Material Phase-Change and Expulsion Micro-Machining Process |
-
1997
- 1997-03-17 JP JP6359197A patent/JPH10261862A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2011249451A (en) * | 2010-05-25 | 2011-12-08 | Nec Tohoku Ltd | Method of forming dam for damming upper stream body of printed wiring board, dam, and printed wiring board |
| JP2016152324A (en) * | 2015-02-18 | 2016-08-22 | Ｄｏｗａメタルテック株式会社 | Method for manufacturing metal-ceramic circuit board |
| US20210139321A1 (en) * | 2019-11-08 | 2021-05-13 | Massachusetts Institute Of Technology | Laser-Assisted Material Phase-Change and Expulsion Micro-Machining Process |
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