JPH10249718A - Sheet lapping method using ring surface plate - Google Patents

Sheet lapping method using ring surface plate

Info

Publication number
JPH10249718A
JPH10249718A JP5793697A JP5793697A JPH10249718A JP H10249718 A JPH10249718 A JP H10249718A JP 5793697 A JP5793697 A JP 5793697A JP 5793697 A JP5793697 A JP 5793697A JP H10249718 A JPH10249718 A JP H10249718A
Authority
JP
Japan
Prior art keywords
work
surface plate
ring
shaped
ring surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5793697A
Other languages
Japanese (ja)
Inventor
Shiyuubin Minami
秀旻 南
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Super Silicon Crystal Research Institute Corp
Original Assignee
Super Silicon Crystal Research Institute Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Super Silicon Crystal Research Institute Corp filed Critical Super Silicon Crystal Research Institute Corp
Priority to JP5793697A priority Critical patent/JPH10249718A/en
Publication of JPH10249718A publication Critical patent/JPH10249718A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To uniformly lap a wafer at both sides under stable conditions by using the frictional force of ring surface plate for the self-rotation of a wafer to reduce load on a wafer rotation supporting mechanism. SOLUTION: Ring surface plate 13, 23 with lapping faces 14, 24 having outer diameters almost equal to the radius of a disc work W are opposed to the both sides of the work W and thrusted thereto to rotate the work W with a driving roller 31 contacting the edge of the work W, and the ring surface plate 13, 23 are reversely rotated at different rotating speeds to grant rotating torque resulting from a rotting speed difference to the work W for lapping the work W at both sides while supplying abrasive grain suspended slurry A to the work W via the cavities of the ring surface plate 13, 23. The ring surface plate 13, 23 may be rotated in the same direction at the same or different rotating speed(s). As rotating torque is given to the work W by the ring surface plate 13, 23, the load of the driving roller 31 is less required.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【産業上の利用分野】本発明は、リング定盤との摩擦で
ウェーハに自転力を与えながら均一に枚葉ラッピングす
る方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of uniformly lapping a single wafer while applying a rotation force to a wafer by friction with a ring surface plate.

【0002】[0002]

【従来の技術】インゴットをスライスして得たウェーハ
には、厚み,平坦度,平滑度等にバラツキがある。そこ
で、これらバラツキをラッピングにより除去し、ポリッ
シング,鏡面研磨,仕上げ研磨して製品ウェーハを製造
している。ウェーハの両面ラッピングには、従来から図
1に示す設備構成の装置が多用されている。このラッピ
ング装置は、下定盤1,上定盤2,サンギア3,インタ
ーナルギア4を備えており、それぞれが専用の駆動モー
タ5,5・・で回転される。ラッピングされるウェーハ
は、図2に示すように複数枚のワーク6としてキャリア
7に収容される。キャリア7は、外周に形成された歯部
をサンギア3及びインターナルギア4に噛み合わせて下
定盤1上に所定間隔で配置される。そして、昇降装置8
により上定盤2を降下させ、下定盤1と上定盤2との間
にキャリア7を挟み込む。この状態で下定盤1,上定盤
2,サンギア3,インターナルギア4を回転させると、
キャリア7は公転及び自転しながら下定盤1,上定盤2
の研磨布に摺擦し、ラッピングが施される。このように
複数枚のウェーハ7を同時にラッピングすると、定盤
1,2の平行バランスやラップ駆動行為による荷重圧力
バランスが図られ、均一なラッピングが可能となる。
2. Description of the Related Art Wafers obtained by slicing ingots vary in thickness, flatness, smoothness, and the like. Therefore, these variations are removed by lapping, and the product wafer is manufactured by polishing, mirror polishing, and finish polishing. Conventionally, an apparatus having a facility configuration shown in FIG. 1 has been frequently used for lapping a wafer on both sides. This lapping device includes a lower platen 1, an upper platen 2, a sun gear 3, and an internal gear 4, each of which is rotated by a dedicated drive motor 5, 5,. The wafer to be wrapped is accommodated in a carrier 7 as a plurality of works 6 as shown in FIG. The carrier 7 is arranged at predetermined intervals on the lower stool 1 by meshing teeth formed on the outer periphery with the sun gear 3 and the internal gear 4. And the lifting device 8
Then, the upper platen 2 is lowered, and the carrier 7 is sandwiched between the lower platen 1 and the upper platen 2. When the lower platen 1, upper platen 2, sun gear 3, and internal gear 4 are rotated in this state,
Carrier 7 revolves and rotates, lower surface plate 1, upper surface plate 2
Is rubbed and wrapped. When a plurality of wafers 7 are wrapped at the same time in this manner, the parallel balance of the platens 1 and 2 and the load pressure balance by the lap driving action are achieved, and uniform lapping can be performed.

【0003】[0003]

【発明が解決しようとする課題】ところで、半導体デバ
イスの普及に従って多量のチップを必要とすることか
ら、大口径のウェーハが望まれるようになってきてい
る。図1,図2の設備構成をもつ装置で大口径のウェー
ハをラッピングしようとすると、ウェーハの径に応じた
大きさのキャリアが必要となり、設備自体が大型化す
る。大型化に伴って下定盤,上定盤,サンギア,インタ
ーナルギア等に対する加工精度が苛酷になり、結果とし
て設備コストを上昇させることになる。そこで、本発明
者は、大口径ウェーハに適した枚葉ラッピング装置を特
願平8−205196号で提案した。このラッピング装
置では、大口径のウェーハを二つのリング状定盤の間に
挟み、リング状定盤の空洞部に砥粒懸濁スラリーを送り
込みながらリング状定盤を回転させることにより、ウェ
ーハの表裏両面を枚葉ラッピングしている。この方式に
よるとき、加工されるウェーハの径に応じたリング状定
盤を使用するだけで、装置自体を大型化する必要がな
い。本発明は、先に提案した枚葉ラッピング装置を更に
改良したものであり、リング状定盤との摩擦力をウェー
ハの自転に利用することにより、ウェーハ回転支持機構
にかかる負荷を軽減し、安定条件下で均一にウェーハを
両面ラッピングすることを目的とする。
Since a large number of chips are required with the spread of semiconductor devices, large-diameter wafers have been desired. When wrapping a large-diameter wafer with an apparatus having the equipment configuration shown in FIGS. 1 and 2, a carrier having a size corresponding to the diameter of the wafer is required, and the equipment itself becomes large. As the size increases, the processing accuracy for the lower surface plate, upper surface plate, sun gear, internal gear, and the like becomes severe, and as a result, equipment costs increase. Therefore, the present inventors have proposed a single wafer lapping apparatus suitable for a large-diameter wafer in Japanese Patent Application No. Hei 8-205196. In this lapping device, a large-diameter wafer is sandwiched between two ring-shaped platens, and the ring-shaped platen is rotated while feeding the abrasive suspension slurry into the cavity of the ring-shaped platen. Both sides are wrapped. With this method, it is only necessary to use a ring-shaped surface plate corresponding to the diameter of the wafer to be processed, and there is no need to increase the size of the apparatus itself. The present invention is a further improvement of the previously proposed single-wafer wrapping apparatus, and reduces the load on the wafer rotation support mechanism by utilizing the frictional force with the ring-shaped platen for the rotation of the wafer, thereby stabilizing the wafer. The purpose is to lap the wafer uniformly on both sides under the conditions.

【0004】[0004]

【課題を解決するための手段】本発明の枚葉ラッピング
方法は、その目的を達成するため、円盤状ワークの半径
にほぼ等しい外径のラップ面をもつリング状定盤をワー
クの両面に対向させて押圧し、ワークのエッジ部に当接
する駆動ローラでワークを回転させると共に、回転速度
差に起因した回転トルクがワークに付与されるように、
異なる回転速度でリング状定盤を逆方向に回転させ、リ
ング状定盤の空洞部を介して砥粒懸濁スラリーをワーク
に供給しながらワークの両面をラッピングすることを特
徴とする。リング状定盤は、同一又は異なる回転速度で
同一方向に回転させても良い。
In order to achieve the object, a single-wafer lapping method according to the present invention has a ring-shaped surface plate having a lap surface having an outer diameter substantially equal to the radius of a disk-shaped work opposed to both surfaces of the work. To press and rotate the work with a drive roller that abuts on the edge of the work, and to apply a rotational torque to the work due to a difference in rotation speed.
The method is characterized in that the ring-shaped surface plate is rotated in the opposite direction at different rotation speeds, and both surfaces of the work are wrapped while supplying the abrasive suspension slurry to the work through the cavity of the ring-shaped surface plate. The ring-shaped platen may be rotated in the same direction at the same or different rotation speed.

【0005】[0005]

【実施の形態】本発明に従った枚葉ラッピング装置は、
図3に示すように基準側ラップ機構10と移動側ラップ
機構20とを水平方向又は垂直方向に対向させ、ラッピ
ングされるワークWを両ラップ機構10と20との間に
位置させている。基準側ラップ機構10は、基準軸11
の端部に柔軟性のある円盤12を取り付け、円盤12に
リング状の定盤13を固定している。リング状定盤13
は、基準軸11に伝達される動力で矢印a方向に回転す
る。移動側ラップ機構20は、移動軸21の端部に柔軟
性のある円盤22を取り付け、円盤22にリング状の定
盤23を固定している。リング状定盤23は、移動側の
リング状定盤13と同一の面積をもっており、移動軸2
1に伝達される動力で矢印b方向に回転する。
DESCRIPTION OF THE PREFERRED EMBODIMENTS A single-wafer wrapping device according to the present invention comprises:
As shown in FIG. 3, the reference side wrap mechanism 10 and the moving side wrap mechanism 20 face each other in the horizontal direction or the vertical direction, and the work W to be wrapped is located between the two wrap mechanisms 10 and 20. The reference side lap mechanism 10 includes a reference shaft 11
A flexible disk 12 is attached to the end of the disk, and a ring-shaped surface plate 13 is fixed to the disk 12. Ring-shaped surface plate 13
Rotates in the direction of arrow a by the power transmitted to the reference shaft 11. The moving side lap mechanism 20 has a flexible disk 22 attached to an end of a moving shaft 21, and a ring-shaped surface plate 23 fixed to the disk 22. The ring-shaped platen 23 has the same area as the ring-shaped platen 13 on the moving side, and
1 is rotated in the direction of arrow b by the power transmitted to 1.

【0006】リング状定盤13と23との回転方向を逆
にすることにより、定盤13,23に加わる力がほぼ等
しくなり、ワークWの両面にほぼ同じ摩擦力を発生させ
る。このとき、リング状定盤13と23との回転速度に
若干の差を付けると、速度差に応じた摩擦力でワークW
に回転トルクが付与される。回転トルクの方向は、回転
速度が大きいリング状定盤13又は23の回転方向に一
致する。或いは、リング状定盤13,23の回転方向を
一致させるとき、強制的な自転トルクがリング状定盤1
3,23からワークWに与えられる。何れの場合も、ワ
ークWは、リング状定盤13,23のラップ面14,2
4で加圧保持される。移動側ラップ機構20のリング状
定盤23は、圧力機構(図示せず)により矢印c方向に
移動自在となっている。これにより、ラップ面は、摩耗
に応じて矢印c方向に移動され、移動量の調節によって
ワークWに加わる加圧力が一定に保たれる。
[0006] By reversing the rotation direction of the ring-shaped bases 13 and 23, the forces applied to the bases 13 and 23 become substantially equal, and substantially the same frictional force is generated on both surfaces of the work W. At this time, if a slight difference is made in the rotation speed between the ring-shaped surface plates 13 and 23, the work W
Is given a rotational torque. The direction of the rotation torque matches the rotation direction of the ring-shaped surface plate 13 or 23 having a high rotation speed. Alternatively, when the rotation directions of the ring-shaped surface plates 13 and 23 are made to coincide with each other, the forcible rotation torque is applied to the ring-shaped surface plate 1.
3 and 23 are provided to the work W. In any case, the workpiece W is placed on the lapping surfaces 14, 2 of the ring-shaped surface plates 13, 23.
The pressure is held at 4. The ring-shaped surface plate 23 of the moving-side lap mechanism 20 is movable in the direction of arrow c by a pressure mechanism (not shown). Thereby, the lap surface is moved in the direction of the arrow c in accordance with the wear, and the pressing force applied to the work W is kept constant by adjusting the amount of movement.

【0007】ワークWの表裏両面に配置したウェーハ回
転支持機構30の駆動ローラ31,31・・で、矢印d
方向の回転がワークWに与えられる。回転しているワー
クWの姿勢は、ワークWの周縁に接触して回転するガイ
ドローラ32により安定化される。これにより、予め設
定された位置関係でワークWがリング状定盤13,23
に圧接し、一定した条件下でワークWがラッピングされ
る。先願・特願平8−205196号では、専ら駆動ロ
ーラ31,31・・によりワークWを回転させている。
駆動ローラ31は、両側31l ,31r からワークWの
両面に当接する。両側の駆動ローラ31l ,31r は、
ワークWの面内に回転トルクのみを付与し、他の力が相
殺される位置関係で配置・回転する構成になっている。
この方式では、定盤面の回転条件を調整することにより
ワークWのスムーズな確保される。しかし、ワークWの
表面を摺擦する駆動ローラ31,31・・で回転させる
ため、負荷が大きい場合に滑りが生じ、ワークWの表面
に摩擦痕が発生する虞れがある。また、ワークWのエッ
ジ近傍にトルクを与えていることからワークWに変形等
の欠陥を持ち込む虞れもあり、大きなトルクを得るため
に回転支持機構30の構造も複雑になり易い。
The drive rollers 31, 31,... Of the wafer rotation support mechanism 30 arranged on both front and back sides of the work W
The rotation in the direction is given to the workpiece W. The posture of the rotating workpiece W is stabilized by the guide roller 32 rotating in contact with the peripheral edge of the workpiece W. As a result, the work W is moved to the ring-shaped bases 13 and 23 in a preset positional relationship.
, And the work W is wrapped under constant conditions. In the prior application / Japanese Patent Application No. 8-205196, the work W is rotated exclusively by the drive rollers 31, 31,.
The drive roller 31 comes into contact with both sides of the work W from both sides 31 l and 31 r . The drive rollers 31 l and 31 r on both sides are
The configuration is such that only the rotational torque is applied to the surface of the work W, and the work W is arranged and rotated in a positional relationship where other forces are offset.
In this method, the work W can be ensured smoothly by adjusting the rotation condition of the platen surface. However, since the surface of the work W is rotated by the driving rollers 31, 31... Which rub against each other, when the load is large, the work W may slip, and a friction mark may be generated on the surface of the work W. In addition, since the torque is applied to the vicinity of the edge of the work W, there is a possibility that the work W may have a defect such as deformation, and the structure of the rotation support mechanism 30 tends to be complicated in order to obtain a large torque.

【0008】そこで、本発明においては、互いに逆方向
に回転するリング状定盤13,23の回転速度に差を付
けて回転トルクをワークWに与え、或いはリング状定盤
13,23を同一方向に回転させることにより強制的に
ワークWを回転させるトルクを得ている。そのため、ワ
ークWを回転させるため回転支持機構30にかかる負荷
が軽減され、簡単な構造をもつ回転支持機構30を採用
できる。しかも、ワークWの中央部表面に接触するリン
グ状定盤13,23で回転トルクを与えているので、ワ
ークWは安定姿勢で回転する。リング状定盤13,23
は、ラップ面14,24の全域に渡って圧力を均一にす
るため、ワークWの半径にほぼ対応する外径をもつこと
が好ましい。ラップ面14,24は幅を狭くした形状に
なっており、ラップ面14,24の内側に空洞部15,
25が形成されている。通常、回転周速は半径に比例し
て外周側ほど大きくなり、ラッピングによる表面欠陥層
の除去加工は圧力と周速度に比例する。そのため、周速
度が遅い部分では摩耗も小さく、平面性が損なわれる。
この点、本発明では、幅の狭いラップ面14,24を形
成しているので、回転周速が近似され、内側及び外側共
に均一化されたラッピング作用を呈する。
Therefore, in the present invention, a rotational torque is applied to the workpiece W by making a difference between the rotation speeds of the ring-shaped bases 13 and 23 rotating in opposite directions, or the ring-shaped bases 13 and 23 are moved in the same direction. , A torque for forcibly rotating the work W is obtained. Therefore, the load on the rotation support mechanism 30 for rotating the work W is reduced, and the rotation support mechanism 30 having a simple structure can be adopted. In addition, since the rotating torque is given by the ring-shaped surface plates 13 and 23 that come into contact with the surface of the central portion of the work W, the work W rotates in a stable posture. Ring-shaped surface plates 13, 23
In order to make the pressure uniform over the entire area of the lap surfaces 14 and 24, it is preferable to have an outer diameter substantially corresponding to the radius of the work W. The wrap surfaces 14 and 24 have a narrow shape, and the cavities 15 and 24 are provided inside the wrap surfaces 14 and 24.
25 are formed. Usually, the rotational peripheral speed increases in proportion to the radius toward the outer peripheral side, and the removal processing of the surface defect layer by lapping is proportional to the pressure and the peripheral speed. Therefore, wear is small in a portion where the peripheral speed is low, and flatness is impaired.
In this regard, in the present invention, since the wrap surfaces 14 and 24 having a small width are formed, the rotational peripheral speed is approximated, and the lapping action is uniformed on both the inside and the outside.

【0009】ラップ面14,24には、所定パターンの
溝(図示せず)が刻設されており、基準軸11及び移動
軸21に形成されている貫通孔17,27から砥粒懸濁
スラリーAが空洞部15,25に送り込まれ、ワークW
のラッピングに使用される。砥粒懸濁スラリーAは、ラ
ッピングで発生した加工屑と共に溝を経て外部に排出さ
れる。砥粒懸濁スラリー及び加工屑は、リング状定盤1
3,23の回転による遠心力でリング状定盤13,23
に形成されている放射状の溝(図示せず)を経由して外
部に排出される。ラップ面14,24には、必要に応じ
て適宜のコーティングを施すことができる。たとえば、
クロスを貼り付けたラップ面14,24は、鏡面研磨に
使用することも可能である。ワークWのラップ仕上げ
は、使用する砥粒の種類や粒径に応じて調整される。
[0009] Grooves (not shown) of a predetermined pattern are engraved on the lap surfaces 14 and 24, and abrasive suspension slurry is formed through through holes 17 and 27 formed in the reference shaft 11 and the moving shaft 21. A is sent into the cavities 15, 25, and the work W
Used for wrapping. The abrasive suspension A is discharged to the outside through the grooves together with the processing waste generated by the lapping. Abrasive suspension slurry and processing waste are collected on a ring-shaped surface plate 1
The ring-shaped surface plates 13, 23 are formed by centrifugal force generated by the rotation of
Is discharged to the outside via a radial groove (not shown) formed in the fin. The wrap surfaces 14 and 24 can be appropriately coated as needed. For example,
The wrap surfaces 14 and 24 to which the cloth has been attached can also be used for mirror polishing. The lap finish of the work W is adjusted according to the type and particle size of the abrasive used.

【0010】[0010]

【実施例】【Example】

実施例1:直径200mmのワークWの両面に外径10
3mm,内径83mmのリング状定盤13,23を対向
させ、押圧力200g/cm2 で押し付けた。砥粒とし
ては、平均粒径13μmのAl23 を400g/lの
割合で水に懸濁させたものを使用した。砥粒懸濁スラリ
ーAを0.005m3 /分の流量で貫通孔17,27か
らリング状定盤13,23の空洞部15,25に送り込
みながら、リング状定盤13をa方向に500rpm,
他方のリング状定盤23をb方向に450rpmの速度
で回転させた。ワークWは、リング状定盤13,23の
回転速度差に起因する回転トルクが回転支持機構30に
よる回転力に加算され、20rpmでd方向に回転し
た。また、ラッピング中、ワークWに対するリング状定
盤13,23の押圧力を検出し、その押圧力を所定のプ
ログラムシーケンスに従って調節した。回転支持機構3
0によりワークWに与える駆動力は、リング状定盤1
3,23の回転速度に差を付けない場合に比較して50
%低減することができた。ラッピングを3分間継続した
後、ワークWをラップ装置から取り出し、ワークWの両
面を調査した。その結果、材料TTV30μmをTTV
1μmに改善できた。また、材料ウェーハ面に存在する
ソーマークも完全に除去された。
Example 1: A work W having a diameter of 200 mm has an outer diameter of 10 on both sides.
The ring-shaped surface plates 13 and 23 having a diameter of 3 mm and an inner diameter of 83 mm were opposed to each other and pressed with a pressing force of 200 g / cm 2 . As the abrasive grains, those obtained by suspending Al 2 O 3 having an average particle diameter of 13 μm in water at a rate of 400 g / l were used. While the abrasive suspension A is sent from the through holes 17 and 27 into the cavities 15 and 25 of the ring-shaped platen 13 and 23 at a flow rate of 0.005 m 3 / min, the ring-shaped platen 13 is moved at 500 rpm in the direction a.
The other ring-shaped surface plate 23 was rotated in the direction b at a speed of 450 rpm. The work W was rotated in the direction d at 20 rpm by adding the rotation torque resulting from the difference in rotation speed between the ring-shaped surface plates 13 and 23 to the rotation force by the rotation support mechanism 30. During the lapping, the pressing force of the ring-shaped surface plates 13 and 23 against the work W was detected, and the pressing force was adjusted according to a predetermined program sequence. Rotation support mechanism 3
0, the driving force applied to the work W is
50 compared to the case where there is no difference between the rotation speeds of 3, 23
% Could be reduced. After the lapping was continued for 3 minutes, the work W was taken out of the wrapping device and both surfaces of the work W were examined. As a result, the material TTV 30 μm was
It could be improved to 1 μm. Also, saw marks existing on the material wafer surface were completely removed.

【0011】実施例2:リング状定盤13,23を同一
方向に200rpmの速度,押圧力50g/cm2 で回
転させる外は、実施例1と同じ条件下でワークWを両面
ラッピングした。この場合、同一方向に回転するリング
状定盤13,23によりワークWに大きな回転トルクが
与えられるので、回転支持機構30によりワークWに与
える駆動力を大幅に低減できた。しかも、ラッピングさ
れたワークWは、実施例1と同様に良好な表面をもって
いた。
Example 2 A work W was wrapped on both sides under the same conditions as in Example 1 except that the ring-shaped surface plates 13 and 23 were rotated in the same direction at a speed of 200 rpm and a pressing force of 50 g / cm 2 . In this case, since a large rotational torque is applied to the work W by the ring-shaped bases 13 and 23 rotating in the same direction, the driving force applied to the work W by the rotation support mechanism 30 can be greatly reduced. In addition, the wrapped work W had a good surface as in Example 1.

【0012】[0012]

【発明の効果】以上に説明したように、本発明において
は、ワークに対向させたリング状定盤の回転速度又は回
転方向を調整することにより、リング状定盤の回転でワ
ークに回転トルクを与えている。そのため、ワークを回
転させる回転支持機構の負荷が軽減され、安定姿勢でワ
ークが回転するため、高精度のラッピングが可能とな
り、高品質のウェーハが得られる。
As described above, in the present invention, by adjusting the rotation speed or the rotating direction of the ring-shaped surface plate facing the work, the rotational torque is applied to the work by the rotation of the ring-shaped surface plate. Have given. Therefore, the load on the rotation support mechanism for rotating the work is reduced, and the work rotates in a stable posture, so that high-precision lapping can be performed and a high-quality wafer can be obtained.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 従来の両面ラッピング装置の概略FIG. 1 is an outline of a conventional double-sided lapping apparatus.

【図2】 従来の両面ラッピング装置の下定盤に配置さ
れたキャリア
FIG. 2 A carrier arranged on a lower platen of a conventional double-sided lapping device

【図3】 本発明で使用する枚葉ラッピング装置FIG. 3 is a sheet wrapping apparatus used in the present invention.

【符号の説明】[Explanation of symbols]

10:基準側ラップ機構 20:移動側ラップ機構
11:基準軸 21:移動軸 12,22:柔軟
性のある円盤 13,23:リング状定盤 14,24:ラップ面 15,25:空洞部 1
7,27:貫通孔 30:ウェーハ回転支持機構 31:駆動ローラ
32:ガイドローラ W:ワーク A:砥粒懸濁スラリー
10: Reference side wrap mechanism 20: Moving side wrap mechanism
11: Reference axis 21: Moving axis 12, 22: Flexible disk 13, 23: Ring-shaped surface plate 14, 24: Lapping surface 15, 25: Cavity 1
7, 27: through hole 30: wafer rotation support mechanism 31: drive roller
32: Guide roller W: Work A: Abrasive suspension slurry

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 円盤状ワークの半径にほぼ等しい外径の
ラップ面をもつリング状定盤をワークの両面に対向させ
て押圧し、ワークのエッジ部に当接する駆動ローラでワ
ークを回転させると共に、回転速度差に起因した回転ト
ルクがワークに付与されるように、異なる回転速度でリ
ング状定盤を逆方向に回転させ、リング状定盤の空洞部
を介して砥粒懸濁スラリーをワークに供給しながらワー
クの両面をラッピングすることを特徴とするリング状定
盤を用いた枚葉ラッピング方法。
1. A ring-shaped surface plate having a wrap surface having an outer diameter substantially equal to the radius of a disk-shaped work is pressed against both surfaces of the work, and the work is rotated by a drive roller contacting an edge portion of the work. The ring-shaped platen is rotated in the opposite direction at a different rotation speed so that the rotation torque caused by the rotation speed difference is applied to the work, and the abrasive suspended slurry is worked through the cavity of the ring-shaped platen. A single wafer lapping method using a ring-shaped platen, wherein both sides of a work are wrapped while being supplied to a workpiece.
【請求項2】 円盤状ワークの半径にほぼ等しい外径の
ラップ面をもつリング状定盤をワークの両面に対向させ
て押圧し、ワークのエッジ部に当接する駆動ローラでワ
ークを回転させると共に、回転速度差に起因した回転ト
ルクがワークに付与されるように、同一又は異なる回転
速度でリング状定盤を同一方向に回転させ、リング状定
盤の空洞部を介して砥粒懸濁スラリーをワークに供給し
ながらワークの両面をラッピングすることを特徴とする
リング状定盤を用いた枚葉ラッピング方法。
2. A ring-shaped surface plate having a lap surface having an outer diameter substantially equal to the radius of the disk-shaped work is pressed against both surfaces of the work, and the work is rotated by a driving roller contacting an edge portion of the work. By rotating the ring-shaped surface plate in the same direction at the same or different rotation speed so that the rotation torque caused by the rotation speed difference is applied to the work, the abrasive suspension slurry is passed through the cavity of the ring-shaped surface plate. Wrapping both sides of a work while supplying the work to the work.
JP5793697A 1997-03-12 1997-03-12 Sheet lapping method using ring surface plate Pending JPH10249718A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5793697A JPH10249718A (en) 1997-03-12 1997-03-12 Sheet lapping method using ring surface plate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5793697A JPH10249718A (en) 1997-03-12 1997-03-12 Sheet lapping method using ring surface plate

Publications (1)

Publication Number Publication Date
JPH10249718A true JPH10249718A (en) 1998-09-22

Family

ID=13069919

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5793697A Pending JPH10249718A (en) 1997-03-12 1997-03-12 Sheet lapping method using ring surface plate

Country Status (1)

Country Link
JP (1) JPH10249718A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003257906A (en) * 2002-03-05 2003-09-12 Sumitomo Mitsubishi Silicon Corp Method for polishing semiconductor wafer
CN116276629A (en) * 2023-05-19 2023-06-23 连云港浩尔晶电子有限公司 Multi-station quartz wafer grinding device and application method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003257906A (en) * 2002-03-05 2003-09-12 Sumitomo Mitsubishi Silicon Corp Method for polishing semiconductor wafer
CN116276629A (en) * 2023-05-19 2023-06-23 连云港浩尔晶电子有限公司 Multi-station quartz wafer grinding device and application method thereof
CN116276629B (en) * 2023-05-19 2023-11-07 连云港浩尔晶电子有限公司 Multi-station quartz wafer grinding device and application method thereof

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