JPH10242252A - Wafer heater - Google Patents
Wafer heaterInfo
- Publication number
- JPH10242252A JPH10242252A JP4557497A JP4557497A JPH10242252A JP H10242252 A JPH10242252 A JP H10242252A JP 4557497 A JP4557497 A JP 4557497A JP 4557497 A JP4557497 A JP 4557497A JP H10242252 A JPH10242252 A JP H10242252A
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- wafer holding
- holding plate
- aluminum nitride
- sintered body
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Ceramic Products (AREA)
- Physical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体装置や液晶
ガラス基板などの製造工程におけるエッチング装置や成
膜装置等に用いるウエハ加熱装置に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer heating apparatus used for an etching apparatus or a film forming apparatus in a process of manufacturing a semiconductor device, a liquid crystal glass substrate, or the like.
【０００２】[0002]
【従来の技術】従来、半導体装置の製造工程で使用され
るＣＶＤ装置やスパッタリング装置などの成膜装置、あ
るいは微細加工を施すためのエッチング装置などにおい
ては、半導体ウエハを保持しながら加熱するために、抵
抗発熱体を埋設した静電チャックやサセプタなどのウエ
ハ保持盤が用いられ、これらのウエハ保持盤は支持筒を
介して処理室内に設置されていた。2. Description of the Related Art Conventionally, in a film forming apparatus such as a CVD apparatus or a sputtering apparatus used in a manufacturing process of a semiconductor device, or an etching apparatus for performing fine processing, it is necessary to heat a semiconductor wafer while holding it. In addition, a wafer holding plate such as an electrostatic chuck or a susceptor in which a resistance heating element is embedded is used, and these wafer holding plates are installed in a processing chamber via a support cylinder.
【０００３】図２にＣＶＤ装置における処理室３０の概
略図を示すように、半導体ウエハ３５を保持するための
ウエハ保持盤２２と、該ウエハ保持盤２２の裏面に接合
された支持筒２７とからなるウエハ加熱装置２１をＯリ
ングなどのシール材２８を介して処理室３０に設置し、
ウエハ保持盤２２を処理室３０内に配置するようになっ
ていた。また、上記ウエハ保持盤２２の内部には抵抗発
熱体２４を埋設してあり、支持筒２７の内側からウエハ
保持盤２２の裏面に接合された給電端子２５を介して上
記抵抗発熱体２４に通電し、ウエハ保持盤２２を発熱さ
せるとともに、支持筒２７の内側からウエハ保持盤２２
の裏面に接合された熱電対２６でもってその温度を測定
するようになっていた。FIG. 2 is a schematic view of a processing chamber 30 in a CVD apparatus. As shown in FIG. 2, a wafer holding plate 22 for holding a semiconductor wafer 35 and a support cylinder 27 joined to the back surface of the wafer holding plate 22 are shown. Is installed in the processing chamber 30 via a sealing material 28 such as an O-ring,
The wafer holding board 22 is arranged in the processing chamber 30. A resistance heating element 24 is buried inside the wafer holding board 22, and the resistance heating element 24 is energized from the inside of the support cylinder 27 via a power supply terminal 25 joined to the back surface of the wafer holding board 22. Then, the wafer holding plate 22 is heated, and the wafer holding plate 22 is
The temperature is measured by a thermocouple 26 joined to the back surface of the.
【０００４】また、このようなウエハ加熱装置２１を構
成するウエハ保持盤２２は、ハロゲン系腐食性ガス雰囲
気下で耐プラズマ性に優れるとともに、ウエハ３５の着
脱に伴う支持面２３の摩耗が少ない耐摩耗性に優れた材
質により形成する必要があることから、このような材質
としてアルミナ焼結体、窒化アルミニウム焼結体などの
セラミック焼結体を用いるとともに、上記ウエハ保持盤
２２の裏面に、ステンレス等の金属体、あるいはアルミ
ナ焼結体、窒化珪素焼結体、窒化アルミニウム焼結体な
どのセラミック焼結体からなる支持筒２７をガラス接合
やロウ付け接合でもって接合一体化してウエハ加熱装置
２１を構成したものがあった（特公平６−２８２５８号
公報参照）。Further, the wafer holding plate 22 constituting such a wafer heating device 21 has excellent plasma resistance in a halogen-based corrosive gas atmosphere, and has less wear on the support surface 23 due to the attachment and detachment of the wafer 35. Since it is necessary to be formed of a material having excellent wear properties, a ceramic sintered body such as an alumina sintered body or an aluminum nitride sintered body is used as such a material. And the like, or a support cylinder 27 made of a ceramic sintered body such as an alumina sintered body, a silicon nitride sintered body, or an aluminum nitride sintered body. (See Japanese Patent Publication No. 6-28258).
【０００５】[0005]
【発明が解決しようとする課題】ところが、ウエハ加熱
装置２１を構成するウエハ保持盤２２と支持筒２７とを
異なった材質で形成し、ウエハ保持盤２２を高温に発熱
させると、両部材の熱膨張係数が異なるために接合部に
熱膨張差に起因する応力が発生する。しかも、高温に発
熱するウエハ保持盤２２に対し、支持筒２７は処理室３
０に設置され冷却されていることから、ウエハ保持盤２
２と支持筒２７との接合部には大きな熱衝撃が加わるこ
とになる。その為、これらの応力集中によって接合部に
クラックが発生し、ガスリークを生じるといった課題が
あった。However, when the wafer holding plate 22 and the support cylinder 27 constituting the wafer heating device 21 are formed of different materials and the wafer holding plate 22 is heated to a high temperature, the heat of both members is increased. Since the coefficients of expansion are different, stress due to the difference in thermal expansion occurs at the joint. In addition, the supporting cylinder 27 is located in the processing chamber 3 against the wafer holding plate 22 that generates heat at a high temperature.
0, the wafer holding plate 2
A large thermal shock is applied to the joint between the support cylinder 2 and the support cylinder 27. Therefore, there has been a problem that cracks are generated in the joints due to these stress concentrations, and gas leaks occur.
【０００６】また、ウエハ保持盤２２と支持筒２７とを
ガラス接合したウエハ加熱装置２１においても接合材で
あるガラスとの熱膨張差が大きいために強固に接合する
ことができず、さらに接合材のガラスはハロゲン系腐食
性ガスとプラズマの回り込みによって腐食を受け易いこ
とから短期間でガスリークが発生するとともに、パーテ
ィクル汚染を生じるといった課題もあった。Further, even in the wafer heating apparatus 21 in which the wafer holding plate 22 and the support cylinder 27 are glass-bonded, the wafer cannot be firmly bonded due to a large difference in thermal expansion between the glass and the bonding material. The glass described above is susceptible to corrosion due to the flow of the halogen-based corrosive gas and the plasma, so that a gas leak occurs in a short period of time and also there is a problem that particle contamination occurs.
【０００７】一方、ウエハ保持盤２２と支持筒２７とを
ロウ付け接合したウエハ加熱装置２１では、ロウ材がハ
ロゲン系腐食性ガスとプラズマの回り込みによって腐食
することから気密性が低下し、ガスリークを生じるとと
もに、パーティクル汚染を生じるといった課題があっ
た。On the other hand, in the wafer heating apparatus 21 in which the wafer holding plate 22 and the support cylinder 27 are joined by brazing, the brazing material is corroded by the sneaking of the halogen-based corrosive gas and the plasma, so that the airtightness is reduced and the gas leak is reduced. In addition, there is a problem that particle contamination occurs.
【０００８】そこで、図３に示すように、ウエハ保持盤
２２と円柱状支持部２７’とを一体的に成形したあと焼
成することにより、抵抗発熱体２４に通電するための給
電端子２５や熱電対２６を円柱状支持部２７’の内部に
埋設したウエハ加熱装置２１が提案されている。Therefore, as shown in FIG. 3, the wafer holding plate 22 and the columnar support portion 27 'are integrally formed and then fired, so that a power supply terminal 25 for energizing the resistance heating element 24 and a thermoelectric terminal 25 are provided. There has been proposed a wafer heating device 21 in which a pair 26 is embedded inside a cylindrical support 27 '.
【０００９】このウエハ加熱装置２１はウエハ保持盤２
２と円柱状支持部２７’とが一体焼結により形成されて
いることから、気密性の点では優れているものの、その
形状が複雑であるとともに、円柱状支持部２７’の内部
には給電端子２５や熱電対２６を所定の位置に埋設させ
る必要があるなど製作が難しく、実用的ではなかった。This wafer heating device 21 is a wafer holding plate 2
2 and the columnar support portion 27 'are formed by integral sintering, the airtightness is excellent, but the shape is complicated and power is supplied to the inside of the columnar support portion 27'. The production was difficult because the terminal 25 and the thermocouple 26 had to be embedded in predetermined positions, and were not practical.
【００１０】また、ウエハ保持盤２２や支持筒２７をア
ルミナ焼結体で形成したものでは、窒化アルミニウム焼
結体に比べて熱伝導率が悪いことから、支持面２３に保
持したウエハ３５を所定の温度に加熱するのに時間がか
かるとともに、均熱性が得難く、さらには耐熱衝撃性が
低いことから、急冷・急加熱の繰り返しにより破損する
恐れもあった。In the case where the wafer holding plate 22 and the support cylinder 27 are formed of an alumina sintered body, the thermal conductivity is lower than that of the aluminum nitride sintered body. It takes a long time to heat to such a temperature, and it is difficult to obtain uniform heat. Further, since the thermal shock resistance is low, there is also a risk of damage due to repeated rapid cooling and rapid heating.
【００１１】[0011]
【課題を解決するための手段】そこで、本発明は上記課
題に鑑み、抵抗発熱体を内蔵してなるウエハ保持盤と、
該ウエハ保持盤を処理室内に設置する支持筒の両者を窒
化アルミニウム質焼結体により形成するとともに、これ
らウエハ保持盤と支持筒とを、窒化アルミニウムを主成
分とし、希土類酸化物を含んでなる接合層を介して焼成
し、上記接合層の希土類成分がウエハ保持盤及び支持筒
を構成する窒化アルミニウム質焼結体に拡散した状態で
接合一体化してウエハ加熱装置を構成したものである。SUMMARY OF THE INVENTION In view of the above-mentioned problems, the present invention has been made in consideration of the above problems, and has an object to provide a wafer holding plate having a built-in resistance heating element.
Both of the support cylinders for installing the wafer holding plate in the processing chamber are formed of an aluminum nitride sintered body, and the wafer holding plate and the support tube are made of aluminum nitride as a main component and containing a rare earth oxide. A wafer heating device is formed by firing through the bonding layer and bonding and integrating the rare earth component of the bonding layer in an aluminum nitride sintered body forming the wafer holding plate and the support cylinder while diffusing the rare earth component.
【００１２】[0012]
【作用】本発明は、ウエハ加熱装置を構成するウエハ保
持盤と支持筒とを同種の窒化アルミニウム質焼結体によ
り形成するとともに、これらを窒化アルミニウムを主成
分とし、希土類酸化物を含んでなる接合層を介して焼成
し、接合一体化したことから、ウエハ保持盤、支持筒、
及び接合層の熱膨張係数を同一または近似させることが
でき、熱膨張差に起因する応力を大幅に緩和することが
できる。According to the present invention, a wafer holding plate and a support cylinder constituting a wafer heating device are formed of the same type of aluminum nitride sintered body, and these are mainly composed of aluminum nitride and contain rare earth oxides. Since it is fired through the bonding layer and bonded and integrated, the wafer holding plate, the support cylinder,
In addition, the thermal expansion coefficients of the bonding layers can be made equal or similar, and the stress caused by the difference in thermal expansion can be greatly reduced.
【００１３】また、ウエハ保持盤及び支持筒を構成する
窒化アルミニウム質焼結体には、上記接合層の希土類成
分を拡散させるようにしてあることから、ウエハ保持盤
と支持筒との接合強度をより強固なものとすることがで
きるとともに、接合層付近における熱伝導特性を高め、
放熱性に優れたものとすることができる。しかも、窒化
アルミニウム質焼結体自体は優れた耐熱衝撃性を有する
ことから、高温になるウエハ保持盤と冷却される支持筒
との間に生じる熱応力を緩和し、熱衝撃に伴う破損を防
ぐことができる。Further, since the rare earth component of the bonding layer is diffused in the aluminum nitride sintered body constituting the wafer holding plate and the support tube, the bonding strength between the wafer holding plate and the support tube is reduced. As well as being able to be more robust, enhance the heat conduction characteristics near the bonding layer,
Excellent heat dissipation can be achieved. Moreover, since the aluminum nitride sintered body itself has excellent thermal shock resistance, the thermal stress generated between the wafer holding plate, which is heated to a high temperature, and the supporting cylinder to be cooled is reduced, and damage due to the thermal shock is prevented. be able to.
【００１４】[0014]
【発明の実施の形態】以下、本発明の実施形態について
説明する。図１はＣＶＤ装置の処理室に本発明に係るウ
エハ加熱装置１を設置した状態を示す断面図である。Embodiments of the present invention will be described below. FIG. 1 is a sectional view showing a state in which a wafer heating apparatus 1 according to the present invention is installed in a processing chamber of a CVD apparatus.
【００１５】このＣＶＤ装置は処理室３０内に成膜ガス
と雰囲気ガスとしてハロゲン系腐食性ガスを供給するた
めの供給孔３１と、処理室３０内を真空状態とするため
の排気孔３２を備えている。This CVD apparatus has a supply hole 31 for supplying a film-forming gas and a halogen-based corrosive gas as an atmosphere gas into the processing chamber 30, and an exhaust hole 32 for evacuating the processing chamber 30 to a vacuum state. ing.
【００１６】ウエハ加熱装置１は、窒化アルミニウム質
焼結体からなるウエハ保持盤２と、該ウエハ保持盤２と
同種の窒化アルミニウム質焼結体からなる円筒状をした
支持筒７とからなり、上記支持筒７をＯリングなどのシ
ール材８を介して処理室３０に設置することでウエハ保
持盤２を処理室３０内に配置してある。The wafer heating apparatus 1 includes a wafer holding plate 2 made of an aluminum nitride sintered body, and a cylindrical support cylinder 7 made of the same kind of aluminum nitride sintered body as the wafer holding plate 2. The wafer holding plate 2 is disposed in the processing chamber 30 by installing the support cylinder 7 in the processing chamber 30 via a sealing material 8 such as an O-ring.
【００１７】上記ウエハ保持盤２の内部にはタングステ
ン、モリブデン、コバールなどの金属、あるいはこれら
の合金からなる抵抗発熱体４を内蔵してあり、上記支持
筒７の内側からウエハ保持盤２の裏面に接合した給電端
子５を介して抵抗発熱体４に通電するとともに、上記給
電端子５と同様に支持筒７の内側からウエハ保持盤２の
裏面に接合した熱電対６によってウエハ保持盤２の発熱
温度を測定するようになっている。A resistance heating element 4 made of a metal such as tungsten, molybdenum, or Kovar, or an alloy thereof is built in the wafer holding plate 2. The resistance heating element 4 is energized through a power supply terminal 5 joined to the wafer, and the heat generation of the wafer holding plate 2 is performed by a thermocouple 6 joined to the back surface of the wafer holding plate 2 from the inside of the support cylinder 7 similarly to the power supply terminal 5. It is designed to measure temperature.
【００１８】また、上記ウエハ加熱装置１を構成するウ
エハ保持盤２と支持筒７は、窒化アルミニウムを主成分
とし、Ｙ2 Ｏ3 、ＣｅＯ2 、Ｅｒ2 Ｏ3 などの希土類酸
化物を含んだ結合層９を介して焼成し、接合一体化して
あり、ウエハ保持盤２及び支持筒７を構成する窒化アル
ミニウム質焼結体には上記接合層９の希土類成分を拡散
させてある。The wafer holding plate 2 and the support cylinder 7 constituting the wafer heating apparatus 1 are mainly composed of aluminum nitride and contain rare earth oxides such as Y 2 O 3 , CeO 2 and Er 2 O 3 . The rare earth component of the bonding layer 9 is diffused into the aluminum nitride sintered body constituting the wafer holding plate 2 and the support cylinder 7 by firing through the bonding layer 9 and bonding and integrating.
【００１９】本発明のウエハ加熱装置１によれば、ウエ
ハ保持盤２と支持筒７が同種の窒化アルミニウム質焼結
体からなり、これらを窒化アルミニウムを主成分とし、
Ｙ2Ｏ3 、ＣｅＯ2 、Ｅｒ2 Ｏ3 などの希土類酸化物を
含有した接合層９を介して焼結させ、接合一体化してあ
ることから、熱膨張係数を同一または近似させることが
でき、熱膨張差に起因する応力を大幅に緩和することが
できる。According to the wafer heating apparatus 1 of the present invention, the wafer holding plate 2 and the support cylinder 7 are made of the same type of aluminum nitride sintered body, and these are mainly composed of aluminum nitride.
Since it is sintered through a bonding layer 9 containing a rare earth oxide such as Y 2 O 3 , CeO 2 , Er 2 O 3 and bonded and integrated, the thermal expansion coefficients can be made the same or similar. The stress caused by the difference in thermal expansion can be greatly reduced.
【００２０】また、接合層９の希土類成分をウエハ保持
盤２及び支持筒７を構成する窒化アルミニウム質焼結体
に拡散させてあることから、接合強度を高めることがで
きるとともに、接合層９付近の熱伝導特性を高めること
ができる。しかも、窒化アルミニウム質焼結体は優れた
耐熱衝撃性を有することから、高温になるウエハ保持盤
２に対し、支持筒７が処理室３０によって冷却されてい
たとしても接合層９付近に発生する熱応力集中を緩和
し、熱衝撃に対する破損を防ぐことができる。Further, since the rare earth component of the bonding layer 9 is diffused into the aluminum nitride sintered body constituting the wafer holding plate 2 and the support cylinder 7, the bonding strength can be increased and the vicinity of the bonding layer 9 can be improved. Can improve the heat conduction characteristics. In addition, since the aluminum nitride sintered body has excellent thermal shock resistance, the aluminum nitride sintered body is generated in the vicinity of the bonding layer 9 even when the support cylinder 7 is cooled by the processing chamber 30 with respect to the wafer holding plate 2 which becomes high in temperature. The thermal stress concentration can be reduced, and damage due to thermal shock can be prevented.
【００２１】しかも、ウエハ保持盤２、支持筒７、及び
接合層９は優れた耐プラズマ性を持った窒化アルミニウ
ム質焼結体からなるため、腐食性ガス雰囲気下でプラズ
マに曝されたとしても大きく腐食することがない。Further, since the wafer holding plate 2, the support cylinder 7, and the bonding layer 9 are made of an aluminum nitride sintered body having excellent plasma resistance, even if the wafer is exposed to plasma in a corrosive gas atmosphere. No significant corrosion.
【００２２】その為、ウエハ保持盤２の急冷・急加熱を
繰り返したとしてもガスリークがなく、充分な気密性を
持った信頼性の高いウエハ加熱装置１とすることができ
るため、支持筒７の内側よりウエハ保持盤２の裏面に接
合する給電端子５や熱電対６の周囲に特別なシール構造
を設ける必要がなく、ＣＶＤ装置の構造を簡略化するこ
とができるとともに、パーティクル汚染を低減すること
ができる。Therefore, even if rapid cooling and rapid heating of the wafer holding plate 2 are repeated, there is no gas leak, and the highly reliable wafer heating device 1 having sufficient airtightness can be obtained. There is no need to provide a special seal structure around the power supply terminal 5 and the thermocouple 6 joined to the back surface of the wafer holding plate 2 from the inside, so that the structure of the CVD apparatus can be simplified and particle contamination is reduced. Can be.
【００２３】なお、ウエハ保持盤２を６００℃以上の高
温に発熱させる場合には、接合層９付近における接合強
度を高める観点から支持筒７をウエハ保持盤２と同一の
窒化アルミニウム質焼結体により形成することが好まし
い。When the wafer holding plate 2 is heated to a high temperature of 600 ° C. or higher, the supporting cylinder 7 is made of the same aluminum nitride sintered body as the wafer holding plate 2 from the viewpoint of increasing the bonding strength near the bonding layer 9. It is preferable to form with.
【００２４】次に、ウエハ加熱装置１の製造方法を説明
する。Next, a method of manufacturing the wafer heating apparatus 1 will be described.
【００２５】まず、ウエハ保持盤２を製作するには、純
度９９．８％以上のＡｌＮ粉末に溶媒とバインダーを加
えて泥漿を作製するか、あるいは上記ＡｌＮ粉末にＹ2
Ｏ3、ＣｅＯ2 、Ｅｒ2 Ｏ3 などの希土類酸化物を合計
で２０重量％以下の範囲で添加して泥漿を作製する。希
土類酸化物を添加した系においてその含有量を２０重量
％以下とするのは、これより多くなると熱伝導特性や耐
プラズマ性が低下するとともに、熱膨張係数が変化する
といった問題があるからである。First, in order to manufacture the wafer holding board 2, a solvent and a binder are added to AlN powder having a purity of 99.8% or more to prepare a slurry, or Y 2 is added to the AlN powder.
A slurry is prepared by adding rare earth oxides such as O 3 , CeO 2 and Er 2 O 3 in a total amount of 20% by weight or less. The reason why the content of the rare earth oxide is set to 20% by weight or less in the system to which the rare earth oxide is added is that if the content is more than this, there is a problem that the thermal conductivity and the plasma resistance are lowered and the thermal expansion coefficient is changed. .
【００２６】次に、これらの泥漿をドクターブレード法
などのテープ成形法により複数枚のグリーンシートを製
作し、これらのうち数枚のグリーンシートを積み重ねて
グリーンシート積層体を形成し、この表面に抵抗発熱体
４をなすタングステン、モリブデン、コバールなどの金
属、またはこれらの合金からなる金属ペーストをスクリ
ーン印刷法でもって形成し、この金属ペーストの表面に
残りのグリーンシートを積層圧着したあと、切削加工を
施して円板状をした板状体に成形する。そして、この板
状体がＡｌＮ粉末のみからなる場合、窒素雰囲気中にて
１９００〜２１００℃の焼成温度で１〜数時間程度焼成
することにより焼結させ、ＡｌＮ粉末に希土類酸化物を
添加したものからなる場合、窒素雰囲気中にて１７００
〜１９００℃の焼成温度で１〜数時間程度焼成すること
により焼結させて、抵抗発熱体４を埋設した円板状の焼
結体を形成する。そして、この焼結体の一方の表面に研
摩加工を施して中心線平均粗さ（Ｒａ）０．８μｍ以下
とした支持面３を形成することでウエハ保持盤２を製作
する。Next, a plurality of green sheets are manufactured from the slurry by a tape forming method such as a doctor blade method, and several green sheets are stacked to form a green sheet laminate. A metal paste made of a metal such as tungsten, molybdenum, or Kovar, or an alloy thereof, forming the resistance heating element 4 is formed by a screen printing method, and the remaining green sheet is laminated and pressed on the surface of the metal paste, and then cut. To form a disk-shaped plate. When this plate-like body is made of only AlN powder, the sintered body is fired in a nitrogen atmosphere at a firing temperature of 1900 to 2100 ° C. for about 1 to several hours, and sintered with AlN powder added with a rare earth oxide. Consists of 1700 in a nitrogen atmosphere
By sintering by sintering at a sintering temperature of 程度 1900 ° C. for about 1 to several hours, a disc-shaped sintered body in which the resistance heating element 4 is embedded is formed. Then, one surface of the sintered body is polished to form a support surface 3 having a center line average roughness (Ra) of 0.8 μm or less, whereby the wafer holding plate 2 is manufactured.
【００２７】一方、支持筒７を製作するにはウエハ保持
盤２と同様、純度９９．８％以上のＡｌＮ粉末に溶媒と
バインダーを加えて泥漿を作製するか、あるいは上記Ａ
ｌＮ粉末にＹ2 Ｏ3 、ＣｅＯ2 、Ｅｒ2 Ｏ3 などの希土
類酸化物を合計で２０重量％以下の範囲で添加して泥漿
を作製し、これらの泥漿を押出成形法や鋳物成形法によ
り円筒状をした成形体を形成するか、あるいは上記泥漿
をスプレードライヤーで乾燥させて造粒体を製作し、こ
の造粒体を型内に充填してラバープレス成形法により円
筒状をした成形体を形成する。On the other hand, to manufacture the support cylinder 7, similarly to the wafer holding plate 2, a solvent and a binder are added to AlN powder having a purity of 99.8% or more to prepare a slurry,
A rare earth oxide such as Y 2 O 3 , CeO 2 or Er 2 O 3 is added to the 1N powder in a total amount of 20% by weight or less to produce a slurry, and the slurry is formed by an extrusion method or a casting method. Either a cylindrical molded body is formed, or the slurry is dried by a spray dryer to produce a granulated body, and the granulated body is filled in a mold and formed into a cylindrical shape by a rubber press molding method. To form
【００２８】そして、この成形体がＡｌＮ粉末のみから
なる場合、窒素雰囲気中にて１９００〜２１００℃の焼
成温度で１〜数時間程度焼成することにより焼結させ、
ＡｌＮ粉末に希土類酸化物を添加したものからなる場
合、窒素雰囲気中にて１７００〜１９００℃の焼成温度
で１〜数時間程度焼成することにより焼結させて円筒状
の支持筒７を製作する。When the compact is made of only AlN powder, it is sintered by firing at a firing temperature of 1900 to 2100 ° C. for about 1 to several hours in a nitrogen atmosphere,
In the case of a material obtained by adding a rare earth oxide to AlN powder, it is sintered by firing at a firing temperature of 1700 to 1900 ° C. for about 1 to several hours in a nitrogen atmosphere to produce a cylindrical support cylinder 7.
【００２９】さらに、上記ウエハ保持盤２と支持筒７と
を接合するために、接合層９として主成分が窒化アルミ
ニウムからなり、Ｙ2 Ｏ3 、ＣｅＯ2 、Ｅｒ2 Ｏ3 など
の希土類酸化物を合計で３〜２０重量％添加したものに
溶媒を加えて泥漿を作製する。Further, in order to join the wafer holding board 2 and the support cylinder 7, the main component of the joining layer 9 is aluminum nitride, and a rare earth oxide such as Y 2 O 3 , CeO 2 , Er 2 O 3 is used. To a total of 3 to 20% by weight, and a solvent is added to produce a slurry.
【００３０】ここで、希土類酸化物の含有量を３〜２０
重量％とするのは、２０重量％より多くなると前述した
ように窒アルミニウム質焼結体の持つ熱伝導特性や耐プ
ラズマ性が低下するからであり、逆に３重量％より少な
くなると、接合層９付近の熱伝導特性を高めることがで
きないために熱応力集中が起き易くなるためである。Here, the content of the rare earth oxide is 3 to 20.
The reason for setting the weight percentage is that if it is more than 20% by weight, the thermal conductivity and plasma resistance of the aluminum nitride sintered body decrease as described above. Conversely, if it is less than 3% by weight, the bonding layer This is because thermal stress concentration tends to occur because the thermal conduction characteristics near 9 cannot be enhanced.
【００３１】次に、ウエハ保持盤２及び支持筒７の接合
面に研摩加工を施して中心線平均粗さ（Ｒａ）１．６μ
ｍ以下、好ましくは１．０μｍ以下とし、支持筒７の接
合面に上記接合層９をなす泥漿を塗布したあと、ウエハ
保持盤２の接合面と当接させる。そして、この組立体を
乾燥させたあと、窒素雰囲気下にて１７００〜１９００
℃の焼成温度で１〜数時間焼成する。Next, the joint surface between the wafer holding plate 2 and the support cylinder 7 is polished to obtain a center line average roughness (Ra) of 1.6 μm.
m or less, preferably 1.0 μm or less. After the slurry forming the bonding layer 9 is applied to the bonding surface of the support cylinder 7, it is brought into contact with the bonding surface of the wafer holding plate 2. After the assembly is dried, the assembly is dried under a nitrogen atmosphere at 1700 to 1900.
Firing at a firing temperature of 1 ° C. for one to several hours.
【００３２】ここで、接合時の焼成温度を１７００〜１
９００℃とするのは、１７００℃以下では焼結性が悪い
ために接合層９をウエハ保持盤２及び支持筒７を構成す
る窒化アルミニウム焼結体と完全に焼結させることがで
きないからであり、１９００℃より高くなると、拡散が
進むために接合層９中の希土類成分が少なくなり過ぎ、
接合層９の熱伝導特性が低下するとともに、ウエハ保持
盤２や支持筒７が熱変形を生じ、強固な接合強度が得ら
れなくなるからである。Here, the firing temperature at the time of joining is 1700-1.
The reason for setting the temperature to 900 ° C. is that if the temperature is 1700 ° C. or less, the bonding layer 9 cannot be completely sintered with the aluminum nitride sintered body constituting the wafer holding plate 2 and the support cylinder 7 due to poor sinterability. If the temperature is higher than 1900 ° C., the diffusion proceeds, so that the rare earth component in the bonding layer 9 becomes too small,
This is because the thermal conductivity of the bonding layer 9 is reduced, and the wafer holding plate 2 and the support cylinder 7 are thermally deformed, so that a strong bonding strength cannot be obtained.
【００３３】以上のように作製することで、窒化アルミ
ニウム質焼結体からなるウエハ保持盤２と支持筒７と
を、同種の窒化アルミニウム質焼結体からなる接合層９
を介して焼結一体化したウエハ加熱装置１を製造するこ
とができ、ウエハ保持盤２及び支持筒７を構成する窒化
アルミニウム質焼結体の接合界面近傍には接合層９の希
土類成分を拡散させることができる。By manufacturing as described above, the wafer holding plate 2 made of the aluminum nitride sintered body and the support cylinder 7 are connected to the bonding layer 9 made of the same kind of aluminum nitride sintered body.
And a wafer heating apparatus 1 integrated by sintering can be manufactured, and the rare earth component of the bonding layer 9 is diffused near the bonding interface of the aluminum nitride sintered body forming the wafer holding plate 2 and the support cylinder 7. Can be done.
【００３４】なお、上記ウエハ保持盤２と支持筒７とは
接合層９を介して一体的に焼結されているが、これらの
接合界面は、走査電子顕微鏡（ＳＥＭ）により接合部に
おける切断面の写真を撮り、結晶粒子の大きさ等から判
断することができ、希土類成分の拡散度合いは、接合部
の切断面をＸ線アナライザー（ＥＰＭＡ）等により測定
することで確認することができる。The wafer holding plate 2 and the support cylinder 7 are integrally sintered via a bonding layer 9, and the bonding interface between them is cut by a scanning electron microscope (SEM). And the degree of diffusion of the rare earth component can be confirmed by measuring the cut surface of the joint with an X-ray analyzer (EPMA) or the like.
【００３５】このように、図１ではウエハ加熱装置１を
構成するウエハ保持盤２として抵抗発熱体４のみを内蔵
したサセプタについて説明したが、抵抗発熱体４を内蔵
した静電チャックにも適用できることは言うまでもな
い。As described above, the susceptor in which only the resistive heating element 4 is incorporated as the wafer holding plate 2 constituting the wafer heating apparatus 1 is described in FIG. 1, but the present invention can also be applied to an electrostatic chuck in which the resistive heating element 4 is incorporated. Needless to say.
【００３６】[0036]
【実施例】図１に示す本発明のウエハ加熱装置１と、比
較例として図２に示すウエハ保持盤２２と支持筒２７と
をガラス接合したウエハ加熱装置２１、及びウエハ保持
盤２２と支持筒２７とをロウ付け接合したウエハ加熱装
置２１をそれぞれ用意し、接合部の気密性とパーティク
ル量について比較実験を行った。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A wafer heating apparatus 1 of the present invention shown in FIG. 1 and a wafer heating apparatus 21 in which a wafer holding plate 22 and a support cylinder 27 shown in FIG. The wafer heating devices 21 were prepared by brazing and bonding the wafer 27 to each other, and a comparative experiment was performed on the airtightness and the amount of particles at the bonded portion.
【００３７】本実験ではウエハ保持盤２，２２及び支持
筒７，２７をいずれも純度９９．９％の高純度窒化アル
ミニウム焼結体により形成し、ウエハ保持盤２，２２に
埋設する抵抗発熱体４，２４の材質としてタングステン
を使用した。また、比較例のロウ付け固定においては、
ロウ材にＡｇ−Ｃｕ材を用いて接合した。In this experiment, each of the wafer holding boards 2 and 22 and the support cylinders 7 and 27 were formed of a high-purity 99.9% -purity aluminum nitride sintered body, and the resistance heating elements embedded in the wafer holding boards 2 and 22 were used. Tungsten was used as the material of the fourth and the fourth. In the brazing and fixing of the comparative example,
The brazing material was joined using an Ag-Cu material.
【００３８】そして、上記ウエハ保持盤２，２２を６０
０℃に加熱してウエハ３５に薄膜を形成し、１０００枚
処理したあとのウエハ３５に付着するパーティクル数を
パーティクルカウンターにて測定するとともに、ウエハ
加熱装置１，２１の支持筒７，２７内を減圧して真空と
し、Ｈｅリークディテクターにて気密性を測定した。Then, the wafer holding plates 2 and 22 are
After heating to 0 ° C. to form a thin film on the wafer 35, the number of particles adhering to the wafer 35 after processing 1000 wafers is measured by a particle counter, and the inside of the support cylinders 7 and 27 of the wafer heating devices 1 and 21 is measured. The pressure was reduced to a vacuum, and the airtightness was measured with a He leak detector.
【００３９】なお、気密性については、支持筒７，２７
内の真空度が１０-9ｔｏｒｒ以上のものを気密性有りと
し、１０-9ｔｏｒｒ未満となったものを気密性無しとし
て評価した。As for the airtightness, the support cylinders 7, 27
When the degree of vacuum was 10 -9 torr or more, airtightness was evaluated. When the degree of vacuum was less than 10 -9 torr, no airtightness was evaluated.
【００４０】この結果、比較例のガラス接合したウエハ
加熱装置２１及びロウ付け固定したウエハ加熱装置２１
はいずれも１０００枚処理する前に支持筒２７内が１０
-9ｔｏｒｒ未満となり、ガスリークが発生した。As a result, the wafer heating device 21 of the comparative example and the wafer heating device 21 brazed and fixed were used.
In any case, before processing 1000 sheets,
It became less than -9 torr, and gas leak occurred.
【００４１】そこで、ガラス接合したウエハ加熱装置２
１を切断して接合界面を観察したところ、ウエハ保持盤
２２及び支持筒２７と接合材であるガラスとの間の熱膨
張差に起因する応力により接合界面からガスリークが発
生したことが判った。しかも、接合材であるガラスはプ
ラズマにより腐食し、２００個ものパーティクルがウエ
ハ３５に付着していた。また、ロウ付け固定したウエハ
加熱装置２１を切断して接合面界面を観察したところ、
ロウ材がプラズマにより腐食し、接合界面からガスリー
クが発生したことが判った。また、ロウ材の腐食により
ウエハ３５には１２０個のパーティクルが付着してい
た。Therefore, the glass-bonded wafer heating device 2
1 was cut and the bonding interface was observed. As a result, it was found that gas leak occurred from the bonding interface due to the stress caused by the difference in thermal expansion between the wafer holding plate 22 and the support cylinder 27 and the glass as the bonding material. In addition, the glass serving as the bonding material was corroded by the plasma, and as many as 200 particles adhered to the wafer 35. Further, when the wafer heating device 21 fixed by brazing was cut and the interface of the bonding surface was observed,
It was found that the brazing material was corroded by the plasma and gas leak occurred from the joint interface. Further, 120 particles were attached to the wafer 35 due to the corrosion of the brazing material.
【００４２】これに対し、本発明のウエハ加熱装置１に
はガスリークが全く見られず、支持筒７内の真空度を１
０-9ｔｏｒｒ以上に保つことができ、十分な気密性を有
するとともに、ウエハ３５の付着するパーティクル数も
１０個を少ないものであった。On the other hand, no gas leak was observed in the wafer heating apparatus 1 of the present invention, and the degree of vacuum in the support cylinder 7 was reduced to 1 degree.
0 -9 torr or more could be maintained, sufficient airtightness was achieved, and the number of particles to which the wafer 35 adhered was less than 10.
【００４３】[0043]
【発明の効果】以上のように、本発明によれば、抵抗発
熱体を内蔵してなるウエハ保持盤と、該ウエハ保持盤を
処理室内に設置する支持筒の両者を窒化アルミニウム質
焼結体により形成するとともに、これらウエハ保持盤と
支持筒とを、窒化アルミニウムを主成分とし、希土類酸
化物を含んでなる接合層を介して焼成し、上記接合層の
希土類成分がウエハ保持盤及び支持筒を構成する窒化ア
ルミニウム質焼結体に拡散した状態で接合一体化してウ
エハ加熱装置を構成したことにより、ウエハ保持盤と支
持筒とを強固に接合することができるとともに、急冷・
急加熱の繰り返しにおいても優れた耐久性を有すること
から、大きな熱衝撃が加わる状態で使用しても破損する
ことがない。しかも、ウエハ加熱装置全体が耐プラズマ
性に優れることから腐食を受け難く、パーティクルの発
生を大幅に低減することができる。As described above, according to the present invention, both a wafer holding board having a built-in resistance heating element and a support cylinder for installing the wafer holding board in a processing chamber are made of an aluminum nitride sintered body. And sintering the wafer holding plate and the support tube through a bonding layer containing aluminum nitride as a main component and a rare earth oxide, so that the rare earth component of the bonding layer is reduced to the wafer holding plate and the support tube. The wafer holding device and the support cylinder can be firmly joined by joining and integrating in a state of being diffused into the aluminum nitride sintered body constituting
Since it has excellent durability even after repeated rapid heating, it does not break even when used in a state where a large thermal shock is applied. In addition, since the entire wafer heating apparatus has excellent plasma resistance, it is hardly susceptible to corrosion, and the generation of particles can be greatly reduced.
【図１】ＣＶＤ装置の処理室に本発明に係るウエハ加熱
装置を設置した状態を示す断面図である。FIG. 1 is a cross-sectional view showing a state where a wafer heating apparatus according to the present invention is installed in a processing chamber of a CVD apparatus.
【図２】ＣＶＤ装置の処理室に従来のウエハ加熱装置を
設置した状態を示す断面図である。FIG. 2 is a cross-sectional view showing a state where a conventional wafer heating apparatus is installed in a processing chamber of a CVD apparatus.
【図３】従来における他のウエハ加熱装置を示す断面図
である。FIG. 3 is a sectional view showing another conventional wafer heating apparatus.
１・・・ウエハ加熱装置、 ２・・・ウエハ保持盤、３
・・・支持面、４・・・抵抗発熱体、 ５・・・給電端
子、 ６・・・熱電対、７・・・支持筒、 ８・・・シ
ール材、 ９・・・接合層、３０・・・処理室、 ３１
・・・供給孔、 ３２・・・排出孔、３５・・・半導体
ウエハDESCRIPTION OF SYMBOLS 1 ... Wafer heating device, 2 ... Wafer holding board, 3
... Support surface, 4 ... Resistive heating element, 5 ... Power supply terminal, 6 ... Thermocouple, 7 ... Support cylinder, 8 ... Seal material, 9 ... Joining layer, 30 ... Treatment room, 31
... Supply hole, 32 ... Discharge hole, 35 ... Semiconductor wafer
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｈ０１Ｌ 21/205 Ｈ０１Ｌ 21/205 // Ｈ０１Ｌ 21/3065 21/302 Ｂ ──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. 6 Identification code FI H01L 21/205 H01L 21/205 // H01L 21/3065 21/302 B
Claims (1)
と、該ウエハ保持盤を処理室内に設置する支持筒の両者
を窒化アルミニウム質焼結体により形成するとともに、
これらウエハ保持盤と支持筒とを、窒化アルミニウムを
主成分とし、希土類酸化物を含んでなる接合層を介して
焼成し、上記接合層の希土類成分がウエハ保持盤及び支
持筒を構成する窒化アルミニウム質焼結体に拡散した状
態で接合一体化せしめたことを特徴とするウエハ加熱装
置。1. A wafer holding plate having a built-in resistance heating element and a support cylinder for installing the wafer holding plate in a processing chamber are both formed of an aluminum nitride sintered body.
The wafer holding plate and the supporting cylinder are fired through a bonding layer containing aluminum nitride as a main component and containing a rare earth oxide, and the rare earth component of the bonding layer forms aluminum nitride forming the wafer holding plate and the supporting tube. A wafer heating apparatus characterized in that it is joined and integrated in a state of being diffused into a porous sintered body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4557497A JPH10242252A (en) | 1997-02-28 | 1997-02-28 | Wafer heater |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4557497A JPH10242252A (en) | 1997-02-28 | 1997-02-28 | Wafer heater |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10242252A true JPH10242252A (en) | 1998-09-11 |
Family
ID=12723129
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4557497A Pending JPH10242252A (en) | 1997-02-28 | 1997-02-28 | Wafer heater |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10242252A (en) |
Cited By (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002057207A (en) * | 2000-01-20 | 2002-02-22 | Sumitomo Electric Ind Ltd | Wafer holder for semiconductor-manufacturing apparatus, manufacturing method of the same and the semiconductor-manufacturing apparatus |
| JP2002299432A (en) * | 2001-03-30 | 2002-10-11 | Ngk Insulators Ltd | Ceramic susceptor supporting structure |
| WO2003015157A1 (en) * | 2001-08-10 | 2003-02-20 | Ibiden Co., Ltd. | Ceramic joint body |
| JP2003257596A (en) * | 2002-02-28 | 2003-09-12 | Sumitomo Electric Ind Ltd | Ceramic heater and semiconductor/liquid crystal manufacturing device using above heater |
| US6653604B2 (en) | 2001-04-11 | 2003-11-25 | Sumitomo Electric Industries, Ltd. | Heater member for mounting heating object and substrate processing apparatus using the same |
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