JPH1022763A - Mounting method for surface acoustic wave device - Google Patents
Mounting method for surface acoustic wave deviceInfo
- Publication number
- JPH1022763A JPH1022763A JP17226896A JP17226896A JPH1022763A JP H1022763 A JPH1022763 A JP H1022763A JP 17226896 A JP17226896 A JP 17226896A JP 17226896 A JP17226896 A JP 17226896A JP H1022763 A JPH1022763 A JP H1022763A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- base substrate
- acoustic wave
- mounting
- wave device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、表面弾性波デバイ
スの実装方法に関するものである。The present invention relates to a method for mounting a surface acoustic wave device.
【０００２】[0002]
【従来の技術】近年、携帯電話やＰＨＳの普及が著し
く、更に、電子機器のパーソナル通信化が進んでおり、
それに伴い無線通信の送受信機能を形成する、高周波の
アナログ電子部品が非常に重要となっている。その中で
も表面弾性波を利用したデバイスは、小型化、低コスト
化などの面から非常に有効であり、共振子やフィルタな
どに使用されている。2. Description of the Related Art In recent years, portable telephones and PHS have become remarkably widespread, and personal communication of electronic devices has been advanced.
Accordingly, high-frequency analog electronic components that form a transmission / reception function of wireless communication have become very important. Among them, devices utilizing surface acoustic waves are very effective in terms of miniaturization and cost reduction, and are used for resonators and filters.
【０００３】一般的に表面弾性波を利用したデバイスに
おいては、電気信号から表面弾性波への変換、あるいは
その逆の変換を行う変換器（トランスデューサ）が必要
であり、そのための材料としては圧電体が使われること
が多い。圧電体に電界を印加すると、歪み、すなわち変
形が生じ、逆に応力を加えると電界が生じる、いわゆる
圧電効果が発生するため、上記した電気信号および表面
弾性波のトランスデューサは、この圧電効果を利用して
電気および表面弾性波の変換を行っている。圧電単結晶
材料としては、水晶やニオブ酸リチウム（ＬｉＮｂ
Ｏ3 ）、タンタル酸リチウム（ＬｉＴａＯ3 ）などが多
く使われている。In general, a device using a surface acoustic wave requires a transducer for converting an electric signal into a surface acoustic wave or vice versa, and a piezoelectric material is used as a material therefor. Is often used. When an electric field is applied to a piezoelectric body, distortion, that is, deformation occurs, and conversely, an electric field occurs when a stress is applied. This causes a so-called piezoelectric effect. Therefore, the transducer of the electric signal and the surface acoustic wave uses the piezoelectric effect. To convert electric and surface acoustic waves. Quartz or lithium niobate (LiNb
O 3 ), lithium tantalate (LiTaO 3 ) and the like are often used.
【０００４】図６はかかる従来のＳＡＷ（Ｓｕｒｆａｃ
ｅ Ａｃｏｕｓｔｉｃ Ｗａｖｅ）トランスバーサル型
のフィルタの構成を示す図であり、図６（ａ）はそのＳ
ＡＷトランスバーサル型のフィルタの平面図、図６
（ｂ）はそのＳＡＷトランスバーサル型のフィルタの側
面図である。これらの図に示すように、ＳＡＷトランス
バーサル型のフィルタは、圧電効果を有する基板１と、
送信側のＩＤＴ２（Ｉｎｔｅｒｄｉｊｉｄａｌ Ｔｒａ
ｎｓｄｕｃｅｒ：すだれ状電極トランスデューサ）と、
受信側のＩＤＴ３から構成されている。FIG. 6 shows a conventional SAW (Surfac).
e Acoustic Wave) is a diagram showing a configuration of a transversal type filter, FIG.
FIG. 6 is a plan view of an AW transversal type filter.
(B) is a side view of the SAW transversal type filter. As shown in these figures, a SAW transversal type filter includes a substrate 1 having a piezoelectric effect,
IDT2 (Interdigial Tra) on the transmitting side
nsducer: interdigital transducer)
It comprises an IDT 3 on the receiving side.
【０００５】入力信号４より送信側のＩＤＴ２にＲＦ電
圧が印加されると、送信側のＩＤＴ２部に印加電界分布
に対応して、圧電効果により基板１表面近傍に周期的な
歪みが生じ、ＳＡＷ（表面弾性波またはレイリー波）を
励振する。更に、ＳＡＷは基板１表面を伝搬した後、受
信側のＩＤＴ３により再度電気信号に変換されて出力信
号５となる。また、ＳＡＷの波長λは、ＩＤＴの電極周
期２ｄに一致する周波数ｆ０（＝Ｖ／２ｄ、ｖ：表面波
速度）で、各電極脂から励起されたＳＡＷが同相に加わ
るので、送受間の感度が最も高くなる。When an RF voltage is applied to the IDT 2 on the transmitting side from the input signal 4, periodic distortion occurs near the surface of the substrate 1 due to the piezoelectric effect in accordance with the applied electric field distribution in the IDT 2 on the transmitting side, and the SAW (Surface acoustic wave or Rayleigh wave). Further, after the SAW propagates on the surface of the substrate 1, the SAW is converted again into an electric signal by the IDT 3 on the receiving side and becomes an output signal 5. The wavelength λ of the SAW has a frequency f0 (= V / 2d, v: surface wave velocity) corresponding to the electrode period 2d of the IDT, and the SAW excited from each electrode is added to the same phase, so that the sensitivity between transmission and reception is high. Is the highest.
【０００６】このような従来の表面弾性波デバイスの実
装方法としては、図７に示すように、ベース基板１１へ
の電気的接続は、Ｗ／Ｂ（Ｗｉｒｅ Ｂｏｎｄｉｎｇ）
接続法やバンプ接続法など、通常のＬＳＩと同様な接続
方法が可能である。このように、実装された基板１はキ
ャビティを有するベース基板１１に搭載され、封止リッ
ド１２により封止される。なお、１ａは表面弾性波デバ
イスの機能面、１３はエアギャップである。As a conventional method for mounting such a surface acoustic wave device, as shown in FIG. 7, electrical connection to a base substrate 11 is performed by W / B (Wire Bonding).
A connection method similar to a normal LSI, such as a connection method or a bump connection method, is possible. Thus, the mounted substrate 1 is mounted on the base substrate 11 having a cavity, and is sealed by the sealing lid 12. 1a is a functional surface of the surface acoustic wave device, and 13 is an air gap.
【０００７】しかし、先にも述べたように、表面弾性波
デバイスは基板１表面をＳＡＷが伝搬するため、基板１
にエアギャップ１３が必要不可欠であり、従って、図７
に示すように、キャビティを有するベース基板１１へ封
止リッド１２を搭載して封止し、基板１表面のＳＡＷ伝
搬部分にエアギャップ１３を形成している構造が、現在
最も一般的な表面弾性波デバイスのパッケージである。However, as described above, in the surface acoustic wave device, since the SAW propagates on the surface of the substrate 1,
The air gap 13 is indispensable in FIG.
As shown in the figure, the structure in which the sealing lid 12 is mounted on the base substrate 11 having the cavity and sealed, and the air gap 13 is formed in the SAW propagation portion on the surface of the substrate 1 is the most general surface elasticity at present. Wave device package.
【０００８】しかしながら、このような表面弾性波デバ
イスのパッケージは、一般的なＬＳＩのパッケージ（例
えばトランスファモールドなど）に比較して、エアギャ
ップを確保するための構造上の問題から、パッケージコ
ストが非常に高価になり、更にパッケージサイズの小型
化が困難である。そのためエアギャップを確保しつつ、
かつ低コストな表面弾性波デバイスのパッケージングの
報告が行われている。例えば、基板にＳＡＷ伝搬部分を
囲むように環状部材を配置して、樹脂封止を行ったバン
プ接続構造パッケージや（特開平５−９０８８２号公報
参照）、基板のＳＡＷ伝搬部を除く部分にエアギャップ
を形成するためのスペースを設け、対向部に封止リッド
を接着するパッケージ（特開平３−２１１１２号公報参
照）、またキャビティを有するベース基板へ基板をバン
プ接続し、基板の裏面へ封止リッドを接着するパッケー
ジ（特開平６−６１７７８号公報参照）などがある。However, such a surface acoustic wave device package has a very high package cost compared to a general LSI package (eg, transfer mold) due to a structural problem for securing an air gap. And it is difficult to reduce the package size. Therefore, while securing the air gap,
In addition, there is a report on packaging of a low-cost surface acoustic wave device. For example, an annular member is disposed on the substrate so as to surround the SAW propagation portion, and the resin is sealed in a bump connection package (see Japanese Patent Application Laid-Open No. 5-90882), or air is applied to a portion of the substrate other than the SAW propagation portion. A package for providing a space for forming a gap and bonding a sealing lid to an opposing portion (see JP-A-3-21112), and connecting a substrate to a base substrate having a cavity by bumps and sealing the back surface of the substrate There is a package for bonding the lid (see JP-A-6-61778).
【０００９】[0009]
【発明が解決しようとする課題】しかしながら、上記し
た従来の表面弾性波デバイスの実装方法では、エアギャ
ップを形成するために必要な構造部材が増加し、更にそ
れに伴う実装プロセスが必要であり、パッケージ部材費
や量産性を考慮すると、パッケージコストの低減は非常
に難しいという問題点があった。However, in the above-described conventional method for mounting a surface acoustic wave device, the number of structural members required to form an air gap increases, and a mounting process is required accordingly. There is a problem that it is very difficult to reduce the package cost in consideration of the material cost and mass productivity.
【００１０】本発明は、上記問題点を除去し、パッケー
ジコストを低減するとともに、容易に製造することがで
きる表面弾性波デバイスの実装方法を提供することを目
的とする。An object of the present invention is to provide a method of mounting a surface acoustic wave device which eliminates the above problems, reduces the package cost, and can be easily manufactured.
【００１１】[0011]
【課題を解決するための手段】本発明は、上記目的を達
成するために、 〔１〕ベース基板上にＩＤＴが形成された圧電性材料か
らなる基板を実装し、封止を行う表面弾性波デバイスの
実装方法において、前記ベース基板上に接続パッドに対
向するように、ＩＤＴが形成された圧電性材料からなる
基板の入出力端子を接合部材を介して前記基板の機能面
を下方にして実装し、微小なエアギャップを形成するよ
うにしたものである。In order to achieve the above object, the present invention provides: [1] a surface acoustic wave for mounting and sealing a substrate made of a piezoelectric material having an IDT formed on a base substrate. In the device mounting method, an input / output terminal of a substrate made of a piezoelectric material on which an IDT is formed is mounted on the base substrate with a functional surface of the substrate downward through a bonding member so as to face connection pads. Then, a minute air gap is formed.
【００１２】〔２〕ベース基板上にＩＤＴが形成された
圧電性材料からなる基板を実装し、封止を行う表面弾性
波デバイスの実装方法において、前記ベース基板上に接
続パッドに対向するように、ＩＤＴが形成された圧電性
材料からなる基板の入出力端子を接合部材を介して前記
基板の機能面を下方にして実装し、微小なエアギャップ
を形成する工程と、封止剤を用いた封止工程を施すよう
にしたものである。[2] In a surface acoustic wave device mounting method for mounting a substrate made of a piezoelectric material on which an IDT is formed on a base substrate and performing sealing, the substrate is arranged so as to face connection pads on the base substrate. Mounting the input / output terminals of the substrate made of the piezoelectric material on which the IDT is formed with the functional surface of the substrate down via a bonding member to form a minute air gap, and using a sealant. The sealing process is performed.
【００１３】〔３〕上記〔１〕又は〔２〕記載の表面弾
性波デバイスの実装方法において、前記基板の機能面と
同平面内にある入出力端子へバンプ状の接合部材を形成
し、前記ベース基板の接続パッドのサイズを前記接合部
材のサイズより大きく形成し、前記接続パッド形成用の
絶縁層が施された前記ベース基板へ対向させるように、
前記基板の機能面を前記ベース基板へ搭載した後、前記
基板と前記ベース基板を前記接合部材で接続するように
したものである。[3] In the method of mounting a surface acoustic wave device according to [1] or [2], a bump-like joining member is formed on an input / output terminal located on the same plane as a functional surface of the substrate. The size of the connection pad of the base substrate is formed larger than the size of the bonding member, so as to face the base substrate on which the insulating layer for forming the connection pad has been applied,
After mounting the functional surface of the substrate on the base substrate, the substrate and the base substrate are connected by the bonding member.
【００１４】〔４〕上記〔１〕又は〔２〕記載の表面弾
性波デバイスの実装方法において、前記ベース基板の接
続パッドへバンプ状接合部材を形成し、前記基板の入出
力端子のサイズを前記接合部材のサイズより大きく形成
し、更に、前記接続パッド形成用の絶縁層が形成された
ベース基板へ対向させるように、前記基板の機能面を前
記ベース基板へ搭載した後、前記基板と前記ベース基板
を前記接合部材で接続するようにしたものである。[4] In the method of mounting a surface acoustic wave device according to the above [1] or [2], a bump-like joining member is formed on the connection pad of the base substrate, and the size of the input / output terminal of the substrate is reduced. After forming a functional surface of the substrate on the base substrate so as to face the base substrate on which the insulating layer for forming the connection pad is formed, the substrate and the base are formed larger than the size of the joining member. The substrate is connected by the joining member.
【００１５】〔５〕上記〔１〕又は〔２〕記載の表面弾
性波デバイスの実装方法において、前記接合部材に絶縁
層の厚み寸法より高さ寸法の小さい金属スタッドバンプ
を、前記基板の機能面と同平面内にある入出力端子へ形
成し、導電性接着剤を前記金属スタッドバンプへ転写す
るか、もしくは前記接続パッド形成用の絶縁層が施され
たベース基板の接続パッド部分へ前記導電性接着剤を塗
布した後、前記基板の機能面を前記ベース基板側へ対向
させて、荷重を加えながら前記導電性接着剤を硬化する
ことにより、前記基板と前記ベース基板を接続するよう
にしたものである。[5] In the method for mounting a surface acoustic wave device according to [1] or [2], a metal stud bump having a height smaller than a thickness of an insulating layer is provided on the bonding member. The conductive adhesive is transferred to the metal stud bumps, or the conductive adhesive is transferred to the connection pad portions of the base substrate provided with the insulating layer for forming the connection pads. After applying an adhesive, the functional surface of the substrate is opposed to the base substrate, and the conductive adhesive is cured while applying a load, thereby connecting the substrate and the base substrate. It is.
【００１６】上記のように構成したので、 （Ａ）封止剤がベース基板及び基板のギャップへ流れ込
まないように、ベース基板及び基板の距離を限りなく零
に近づけることにより、基板の機能面部（ＳＡＷ伝搬
面）に数μｍ程度のエアギャップを形成することができ
る。 （Ｂ）より確実に封止剤がベース基板及び基板のギャッ
プへ流れ込むことを防止して、基板の機能面（ＳＡＷ伝
搬面）に数μｍ程度のエアギャップを形成するために、
基板外形より若干大きな外形寸法のキャビティを有する
絶縁層をベース基板へ形成し、そのキャビティ内へ基板
が収まるよう、その基板の機能面をベース基板側へ対向
させた後、封止剤を用いた封止を行うことができる。With the above-mentioned structure, (A) the distance between the base substrate and the substrate is made as close as possible to zero so that the sealing agent does not flow into the gap between the base substrate and the substrate, so that the functional surface portion ( An air gap of about several μm can be formed on the SAW propagation surface). (B) To more reliably prevent the sealant from flowing into the gap between the base substrate and the substrate and form an air gap of about several μm on the functional surface (SAW propagation surface) of the substrate,
An insulating layer having a cavity having a slightly larger outer dimension than the outer shape of the substrate was formed on the base substrate, and the functional surface of the substrate was opposed to the base substrate side so that the substrate could be accommodated in the cavity. Sealing can be performed.
【００１７】（Ｃ）ＩＤＴが形成されている基板の機能
面と同平面内にある入出力端子へバンプ状の接合部材を
形成し、前記ベース基板の接続パッドのサイズを接合部
材のサイズより大きく形成し、更に、接続パッド形成用
の絶縁層が施されたベース基板へ対向させるように、基
板の機能面を前記ベース基板へ搭載した後、前記基板及
び前記ベース基板を接合部材で接続し、その後、封止剤
を用いた封止工程を行うことによって、前記基板の機能
面及びベース基板の間にエアギャップを形成することが
できる。(C) A bump-like joining member is formed on the input / output terminal located on the same plane as the functional surface of the substrate on which the IDT is formed, and the size of the connection pad of the base substrate is made larger than the size of the joining member. Forming, further, after mounting the functional surface of the substrate on the base substrate, so as to face the base substrate on which the insulating layer for connection pad formation has been applied, the substrate and the base substrate are connected by a joining member, Then, by performing a sealing step using a sealing agent, an air gap can be formed between the functional surface of the substrate and the base substrate.
【００１８】（Ｄ）ベース基板の接続パッドへバンプ状
の接合部材を形成し、基板の入出力端子のサイズを該接
合部材サイズより明らかに大きく形成し、更に、接続パ
ッド形成用の絶縁層が施されたベース基板へ対向させる
ように、前記基板の機能面をベース基板へ搭載した後、
前記基板及びベース基板を接合部材で接続し、その後、
封止剤を用いた封止工程を行うことによって、基板の機
能面及びベース基板間にエアギャップを形成することが
できる。(D) A bump-shaped joining member is formed on the connection pad of the base substrate, and the size of the input / output terminals of the substrate is clearly larger than the size of the joining member. After mounting the functional surface of the substrate on the base substrate so as to face the applied base substrate,
Connecting the substrate and the base substrate with a joining member,
By performing a sealing step using a sealing agent, an air gap can be formed between the functional surface of the substrate and the base substrate.
【００１９】（Ｅ）接合部材に絶縁層の厚み寸法より高
さ寸法の小さい金属スタッドバンプを、前記基板の機能
面と同平面内にある入出力端子へ形成し、導電性接着剤
を金属スタッドバンプへ転写するか、もしくは接続パッ
ド形成用の絶縁層が施されたベース基板の接続パッドへ
導電性接着剤を塗布した後、前記基板の機能面をベース
基板側へ対向させて、荷重を加えながら導電性接着剤を
硬化することにより、前記基板及びベース基板を接続
し、その後の封止剤を用いた封止を行うことによって、
前記基板の機能面とベース基板の間にエアギャップを形
成することができる。(E) A metal stud bump having a height smaller than the thickness of the insulating layer is formed on an input / output terminal located on the same plane as the functional surface of the substrate, and a conductive adhesive is applied to the metal stud. After transferring to a bump or applying a conductive adhesive to connection pads of a base substrate provided with an insulating layer for forming connection pads, the functional surface of the substrate is opposed to the base substrate side, and a load is applied. By curing the conductive adhesive while connecting the substrate and the base substrate, by performing sealing using a subsequent sealing agent,
An air gap may be formed between the functional surface of the substrate and the base substrate.
【００２０】[0020]
【発明の実施の形態】以下、本発明の実施の形態につい
て図面を参照しながら詳細に説明する。図１は本発明の
第１実施例を示す表面弾性波デバイスの全体構成を示す
断面図、図２は図１のＡ部拡大断面図、図３はその表面
弾性波デバイスのエアギャップの形成方法の説明図であ
る。Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 is a sectional view showing the entire configuration of a surface acoustic wave device according to a first embodiment of the present invention, FIG. 2 is an enlarged sectional view of a portion A in FIG. 1, and FIG. 3 is a method for forming an air gap of the surface acoustic wave device. FIG.
【００２１】これらの図において、２１はベース基板、
２２はそのベース基板２１上に形成される接続パッド、
２３はそのベース基板２１上に形成される絶縁層、２４
は絶縁層２３にホールが形成され、そのホールに形成さ
れた接合部材であり、その接合部材２４に基板２５に形
成される入出力端子２６を接合する。なお、２５ａは基
板２５の機能面、２７はエアギャップ、２８は封止剤で
ある。In these figures, 21 is a base substrate,
22 is a connection pad formed on the base substrate 21;
23 is an insulating layer formed on the base substrate 21;
Is a joining member formed in the insulating layer 23 with a hole formed therein, and the input / output terminal 26 formed on the substrate 25 is joined to the joining member 24. 25a is a functional surface of the substrate 25, 27 is an air gap, and 28 is a sealant.
【００２２】以下、その構成を詳細に説明する。ＩＤＴ
が形成された圧電性材料（例えば、水晶、ＬｉＮｂ
Ｏ3 、ＬｉＴａＯ3など）より成る基板２５とベース基
板２１を、接合部材２４により電気的に接続する。この
時に使用する接合部材２４の材料は、一般的に入手可能
なＰｂ／Ｓｎ系のハンダが比較的安価であり、更にパッ
ケージは搭載基板に共晶ハンダで接続されるため、共晶
ハンダ以上の融点を有する高温ハンダ（例えば、９５Ｐ
ｂ／５Ｓｎなど）が良い。しかし、その他の金属系ハン
ダを用いても問題はない。Hereinafter, the configuration will be described in detail. IDT
Is formed on the piezoelectric material (for example, quartz, LiNb
A substrate 25 made of O 3 , LiTaO 3 or the like) and the base substrate 21 are electrically connected by a joining member 24. As a material of the joining member 24 used at this time, generally available Pb / Sn-based solder is relatively inexpensive, and the package is connected to the mounting substrate by eutectic solder. High-temperature solder having a melting point (for example, 95P
b / 5Sn). However, there is no problem even if other metal-based solder is used.
【００２３】その接続方法としては、基板２５の機能面
２５ａ（ＳＡＷ伝搬面）側にある入出力端子２６に、メ
ッキ法やボール搭載法などでバンプ状の接合部材２４を
形成するか、もしくはボール搭載法や印刷法を用いて、
ベース基板２１の接続パッド２２へバンプ状の接合部材
２４を形成し、基板２５をその機能面２５ａがベース基
板２１へ対向するように搭載して加熱する。As the connection method, a bump-shaped joining member 24 is formed on the input / output terminal 26 on the functional surface 25a (SAW propagation surface) side of the substrate 25 by plating, ball mounting, or the like. Using mounting method and printing method,
A bump-shaped bonding member 24 is formed on the connection pad 22 of the base substrate 21, and the substrate 25 is mounted and heated so that its functional surface 25 a faces the base substrate 21.
【００２４】なお、上記実施例では、バンプ状の接合部
材２４をベース基板２１側に形成するように構成した
が、バンプ状の接合部材２４を基板２５の入出力端子２
６側に形成するようにしても良い。更に、別の接続方法
として、ボール状のハンダをベース基板２１及び基板２
５の間に挟んだ状態で加熱しても良好な接続が得られ
る。加熱方法はベルト炉によるリフローや、ホットプレ
ートなどで行う。In the above embodiment, the bump-shaped joining member 24 is formed on the base substrate 21 side.
It may be formed on the sixth side. Further, as another connection method, a ball-shaped solder is attached to the base substrate 21 and the substrate 2.
Good connection can be obtained even when heating is carried out in a state sandwiched between the five. The heating is performed by a reflow using a belt furnace or a hot plate.
【００２５】このベース基板２１と基板２５との接続の
際に重要なことは、ベース基板２１と基板２５の接続後
に行う封止剤２８を塗布する際に、封止剤２８がベース
基板２１及び基板２５のエアギャップ２７へ流れ込まな
いよう、ベース基板２１及び基板２５の距離を限りなく
零に近くすることである。これにより、基板２５の機能
面２５ａ部に数μｍ程度のエアギャップ２７領域を確保
することが可能になる。What is important in connecting the base substrate 21 and the substrate 25 is that when the sealant 28 is applied after the connection between the base substrate 21 and the substrate 25, the sealant 28 The purpose is to make the distance between the base substrate 21 and the substrate 25 as close to zero as possible so as not to flow into the air gap 27 of the substrate 25. Thereby, it is possible to secure an air gap 27 region of about several μm in the functional surface 25a of the substrate 25.
【００２６】ベース基板２１と基板２５の接続後の状態
は、外観上ほとんど接触しているが、ミクロ的には数μ
ｍ程度のエアギャップ２７が存在しており、よって数μ
ｍのエアギャップ２７があれば、封止剤２８を塗布して
も、よほど高圧力を負荷するか、超低粘度の封止剤２８
でない限り、塗布された封止剤２８がベース基板２１及
び基板２５のエアギャップ２７へ流れ込むようなことは
なく、基板２５の機能面２５ａ部にエアギャップ２７を
確保することが可能となる。The state after connection between the base substrate 21 and the substrate 25 is almost in contact with the external appearance, but is microscopically several μm.
m, an air gap 27 of about m
m air gap 27, even if the sealant 28 is applied, a very high pressure is applied or the ultra-low viscosity sealant 28 is applied.
Otherwise, the applied sealant 28 does not flow into the air gap 27 between the base substrate 21 and the substrate 25, and the air gap 27 can be secured at the functional surface 25a of the substrate 25.
【００２７】次に、ベース基板２１及び基板２５の距離
を限りなく零に近く形成する方法を以下に説明する。ま
ず、図３（ａ）に示すように、ベース基板２１には接続
パッド２２が形成されるが、基板２５との接続側へ絶縁
層２３（例えば、ベース基板２１材料にセラミックを適
用する場合はアルミナコート、ＦＲ４材料などのような
プリント基板の場合ではソルダレジストなど）を施し
て、この時に接続パッド２２の形状をパターンニングし
て形成する。Next, a method for forming the distance between the base substrate 21 and the substrate 25 as close to zero as possible will be described below. First, as shown in FIG. 3A, connection pads 22 are formed on the base substrate 21, and the insulating layer 23 (for example, when ceramic is applied to the material of the base substrate 21) is formed on the connection side with the substrate 25. In the case of a printed board such as an alumina coat or FR4 material, a solder resist or the like is applied, and at this time, the shape of the connection pad 22 is formed by patterning.
【００２８】また、ベース基板２１と基板２５の接続用
に、どちらか一方にバンプ状の接合部材２４を形成する
が、例えば、ベース基板２１側へバンプ状の接合部材２
４を形成する場合は、基板２５の機能面２５ａにある入
出力端子２６のサイズを、形成したバンプ状の接合部材
２４サイズより明らかに大きくしておく。このように構
成することにより、加熱されて溶融した接合部材２４は
入出力端子２６へ充分に濡れ拡がり、よって、基板２５
はその自重によって沈み込み、ベース基板２１と基板２
５は、ほとんど接触している状態となる。In order to connect the base substrate 21 and the substrate 25, a bump-shaped joining member 24 is formed on one of the two.
In the case of forming 4, the size of the input / output terminal 26 on the functional surface 25a of the substrate 25 is clearly larger than the size of the formed bump-shaped joining member 24. With this configuration, the joining member 24 that has been heated and melted sufficiently wets and spreads to the input / output terminals 26, and thus the substrate 25.
Sinks by its own weight, and the base substrate 21 and the substrate 2
5 is almost in contact.
【００２９】逆に、基板２５側へ接合部材２４を形成す
る場合は、ベース基板２１上の接続パッド２２のサイズ
を、バンプ状接合部材２４のサイズより明らかに大きく
しておくこととなる。この時の接合部材２４の高さは、
ベース基板２１の基板２５側に形成された絶縁層２３の
高さとほぼ同じ程度とする。また、接合前の接合部材２
４の高さは、少なくとも絶縁層２３の厚さ寸法より高く
しておくことが必要である。Conversely, when the bonding member 24 is formed on the substrate 25 side, the size of the connection pad 22 on the base substrate 21 must be clearly larger than the size of the bump-shaped bonding member 24. The height of the joining member 24 at this time is
The height is almost the same as the height of the insulating layer 23 formed on the substrate 25 side of the base substrate 21. Also, the joining member 2 before joining
The height of 4 needs to be higher than at least the thickness of the insulating layer 23.
【００３０】実験では、ＦＲ４材料を用いたベース基板
２１に、厚さ４０μｍのソルダレジストで接続パッド２
２をφ０．１ｍｍのサイズで形成し、これにφ０．１ｍ
ｍのハンダボールを使用してボール搭載法により、バン
プ状の接合部材２４を形成し、基板２５の機能面２５ａ
にある入出力端子２６のサイズを、約０．２５ｍｍ□程
度として接続を行ったところ、ベース基板２１と基板２
５のギャップは、５〜１０μｍ程度となり、必要なエア
ギャップ２７は確実に形成することが可能であることが
わかった。また、非常に小さなエアギャップ２７ではあ
るが、フィルタの周波数特性などにおいて問題ないこと
も確認することができた。In the experiment, a connection pad 2 was formed on a base substrate 21 using FR4 material with a solder resist having a thickness of 40 μm.
2 is formed in a size of φ0.1 mm, and
The bump-shaped joining member 24 is formed by a ball mounting method using a solder ball having a thickness of m.
When the connection was made with the size of the input / output terminal 26 in
The gap of No. 5 was about 5 to 10 μm, and it was found that the necessary air gap 27 could be formed reliably. Further, it was confirmed that although the air gap 27 was very small, there was no problem in the frequency characteristics of the filter.
【００３１】ベース基板２１と基板２５を接続した後
は、封止剤２８（例えば、液状エポキシ樹脂、Ｅペレッ
トなど）で封止を行う。なお、本発明の構造によるベー
ス基板２１及び基板２５の接続構造においても、従来通
り、封止リッドなどを用いた封止構造の使用が可能であ
ることは言うまでもない。このように第１実施例によれ
ば、特別な構造部材や、それに伴う複雑な実装プロセス
を用いずに、基板２５の機能面２５ａ部へ確実にエアギ
ャップ２７を形成することができる。したがって、パッ
ケージコストの低減を図り、かつ量産性の高い表面弾性
波デバイスの実装を行うことが可能となる。After connecting the base substrate 21 and the substrate 25, sealing is performed with a sealant 28 (for example, liquid epoxy resin, E pellet, or the like). In the connection structure of the base substrate 21 and the substrate 25 according to the structure of the present invention, it goes without saying that a sealing structure using a sealing lid or the like can be used as before. As described above, according to the first embodiment, the air gap 27 can be reliably formed on the functional surface 25a of the substrate 25 without using a special structural member or a complicated mounting process associated therewith. Therefore, it is possible to reduce the package cost and mount a surface acoustic wave device having high mass productivity.
【００３２】次に、本発明の第２実施例について説明す
る。図４は本発明の第２実施例を示す表面弾性波デバイ
スの実装方法を示す図である。この実施例においても、
上記した第１実施例と基本的な構造、原理は変わらない
が、ベース基板３１と基板３５の接続方法として、図４
（ａ）に示すように、接合部材として、Ａｕスタッドバ
ンプ３７を基板３５側に形成し、ベース基板３１の導電
性接着剤３４に接続する。つまり、Ａｕスタッドバンプ
３７と導電性接着剤３４とを併用して行うものである。Next, a second embodiment of the present invention will be described. FIG. 4 is a view showing a mounting method of a surface acoustic wave device according to a second embodiment of the present invention. Also in this example,
Although the basic structure and principle are the same as those of the first embodiment, the method of connecting the base substrate 31 and the substrate 35 is as shown in FIG.
As shown in (a), an Au stud bump 37 is formed on the substrate 35 side as a joining member, and is connected to the conductive adhesive 34 on the base substrate 31. That is, the Au stud bump 37 and the conductive adhesive 34 are used in combination.
【００３３】この場合に重要なことは、Ａｕスタッドバ
ンプ３７の高さ寸法を絶縁層３３の厚さ寸法より小さく
設定することであり、その後、導電性接着剤３４をＡｕ
スタッドバンプ３７へ転写するか、もしくはベース基板
３１の接続パッド３２部分へ印刷やディスペンスなどの
方法により導電性接着剤３４を塗布し、ベース基板３１
へ基板３５を搭載し硬化する。In this case, it is important to set the height of the Au stud bump 37 to be smaller than the thickness of the insulating layer 33, and then to apply the conductive adhesive 34 to the Au.
The conductive adhesive 34 is transferred to the stud bumps 37 or applied to the connection pads 32 of the base substrate 31 by a method such as printing or dispensing.
The substrate 35 is mounted and cured.
【００３４】すると、図４（ｂ）に示すように、硬化時
に基板３５へ荷重を加えることにより、基板３５はベー
ス基板３１側へ沈み込み、硬化後にはベース基板３１と
基板３５は、ほとんど接触している状態となり、よっ
て、ベース基板３１と基板３５の間のギャップはほぼ零
に近い状態となる。なお、３６は入出力端子である。そ
の後の封止工程は第１実施例に示した通りである。Then, as shown in FIG. 4B, by applying a load to the substrate 35 during curing, the substrate 35 sinks into the base substrate 31 side, and after curing, the base substrate 31 and the substrate 35 are almost in contact with each other. Therefore, the gap between the base substrate 31 and the substrate 35 is almost zero. 36 is an input / output terminal. The subsequent sealing step is as described in the first embodiment.
【００３５】次に、本発明の第３実施例について説明す
る。図５は本発明の第３実施例を示す表面弾性波デバイ
スの実装構造を示す断面図である。この実施例において
も、第１実施例及び第２実施例の基本的な構造、原理お
よび接合プロセスを適用する。Next, a third embodiment of the present invention will be described. FIG. 5 is a sectional view showing a mounting structure of a surface acoustic wave device according to a third embodiment of the present invention. Also in this embodiment, the basic structure, principle, and joining process of the first and second embodiments are applied.
【００３６】図５に示すように、より確実に封止剤４７
がベース基板４１と基板４６の間に存在するエアギャッ
プ４５を形成するための方法として、絶縁層４２部に基
板４６の外形より若干大きい外形寸法を有する１段のキ
ャビティ４４を設ける。この絶縁層４２は、先にも説明
したように、ベース基板４１の接続パッド（図示なし）
を形成するために、接続パッドの形状が、パターンニン
グされた状態で、ベース基板４１上へ基板４６の機能面
４６ａ面が対向する面へ形成されるものである。As shown in FIG. 5, the sealant 47 is more reliably formed.
As a method for forming an air gap 45 existing between the base substrate 41 and the substrate 46, a one-stage cavity 44 having an outer dimension slightly larger than the outer dimension of the substrate 46 is provided in the insulating layer 42. As described above, the insulating layer 42 is connected to a connection pad (not shown) of the base substrate 41.
Is formed on the base substrate 41 in a state where the functional surface 46a of the substrate 46 is opposed to the connection pad in a state where the connection pad is patterned.
【００３７】これにより、仮にベース基板４１と基板４
６とのエアギャップ４５に封止剤４７が流れ込もうとし
ても、キャビティ４４を設けているために、封止剤４７
がＳＡＷ伝搬面である基板４６の機能面４６ａまで到達
する距離が長くなっており、よって、エアギャップ４５
をより確実に形成することが可能である。なお、４３は
接合部材である。Thus, if the base substrate 41 and the substrate 4
6. Even if the sealant 47 flows into the air gap 45 between the sealant 47 and the sealant 47, since the cavity 44 is provided, the sealant 47
Has a longer distance to the functional surface 46a of the substrate 46, which is the SAW propagation surface, so that the air gap 45
Can be formed more reliably. In addition, 43 is a joining member.
【００３８】絶縁層４２部に１段のキャビティ４４を設
けることは非常に容易である。一般的に絶縁層４２のア
ルミナコートやソルダレジストは、ペースト状の絶縁材
料を印刷工程により塗布及び硬化を行って形成してお
り、キャビティ４４を設けるにはキャビティ形状に合わ
せた窓枠状のパターンで、更に、印刷を追加するだけで
ある。It is very easy to provide the one-stage cavity 44 in the insulating layer 42. In general, the alumina coat and the solder resist of the insulating layer 42 are formed by applying and curing a paste-like insulating material by a printing process. In order to provide the cavity 44, a window frame-like pattern matching the cavity shape is provided. Then, only printing is added.
【００３９】なお、本発明は上記実施例に限定されるも
のではなく、本発明の趣旨に基づいて種々の変形が可能
であり、これらを本発明の範囲から排除するものではな
い。It should be noted that the present invention is not limited to the above embodiment, and various modifications are possible based on the spirit of the present invention, and these are not excluded from the scope of the present invention.
【００４０】[0040]
【発明の効果】以上、詳細に説明したように、本発明に
よれば、以下のような効果を奏することができる。 （１）封止剤がベース基板及び基板のギャップへ流れ込
まないように、ベース基板及び基板の距離を限りなく零
に近づけることにより、基板の機能面（ＳＡＷ伝搬面）
に数μｍ程度のエアギャップを形成することができる。As described above, according to the present invention, the following effects can be obtained. (1) By making the distance between the base substrate and the substrate as close to zero as possible so that the sealant does not flow into the gap between the base substrate and the substrate, the functional surface of the substrate (SAW propagation surface)
Can form an air gap of about several μm.
【００４１】したがって、コンパクトで、かつパッケー
ジコストの低減された表面弾性波デバイスを得ることが
できるとともに、その製造を容易にすることができる。 （２）より確実に封止剤がベース基板及び基板のギャッ
プへ流れ込むことを防止して、基板の機能面（ＳＡＷ伝
搬面）に数μｍ程度のエアギャップを形成するために、
基板外形より若干大きな外形寸法のキャビティを有する
絶縁層をベース基板へ形成し、そのキャビティ内へ基板
が収まるよう、その基板の機能面をベース基板側へ対向
させた後、封止剤を用いた封止を行うことができる。Therefore, it is possible to obtain a compact surface acoustic wave device with reduced package cost and to facilitate the manufacture thereof. (2) In order to more reliably prevent the sealant from flowing into the gap between the base substrate and the substrate and form an air gap of about several μm on the functional surface (SAW propagation surface) of the substrate,
After forming an insulating layer having a cavity with an external dimension slightly larger than the external shape of the substrate on the base substrate, facing the functional surface of the substrate to the base substrate side so that the substrate fits into the cavity, a sealing agent was used. Sealing can be performed.
【００４２】（３）ＩＤＴが形成されている基板の機能
面と同平面内にある入出力端子へバンプ状の接合部材を
形成し、前記ベース基板の接続パッドのサイズを接合部
材のサイズより大きく形成し、更に、接続パッド形成用
の絶縁層が施されたベース基板へ対向させるように、基
板の機能面を前記ベース基板へ搭載した後、前記基板及
び前記ベース基板を接合部材で接続し、その後、封止剤
を用いた封止工程を行うことによって、前記基板の機能
面及びベース基板の間にエアギャップを形成することが
できる。(3) A bump-like joining member is formed on the input / output terminal located on the same plane as the functional surface of the substrate on which the IDT is formed, and the size of the connection pad on the base substrate is made larger than the size of the joining member. Forming, further, after mounting the functional surface of the substrate to the base substrate, so as to face the base substrate on which the insulating layer for connection pad formation has been applied, the substrate and the base substrate are connected by a joining member, Then, by performing a sealing step using a sealing agent, an air gap can be formed between the functional surface of the substrate and the base substrate.
【００４３】（４）ベース基板の接続パッドへバンプ状
の接合部材を形成し、基板の入出力端子のサイズを該接
合部材サイズより明らかに大きく形成し、更に、接続パ
ッド形成用の絶縁層が施されたベース基板へ対向させる
ように、前記基板の機能面をベース基板へ搭載した後、
前記基板及びベース基板を接合部材で接続し、その後、
封止剤を用いた封止工程を行うことによって、基板の機
能面及びベース基板間にエアギャップを形成することが
できる。(4) A bump-shaped joining member is formed on the connection pad of the base substrate, the size of the input / output terminals of the substrate is formed to be clearly larger than the size of the joining member, and an insulating layer for forming the connection pad is formed. After mounting the functional surface of the substrate on the base substrate so as to face the applied base substrate,
Connecting the substrate and the base substrate with a joining member,
By performing a sealing step using a sealing agent, an air gap can be formed between the functional surface of the substrate and the base substrate.
【００４４】（５）接合部材に絶縁層の厚み寸法より高
さ寸法の小さい金属スタッドバンプを、前記基板の機能
面と同平面内にある入出力端子へ形成し、導電性接着剤
を金属スタッドバンプへ転写するか、もしくは接続パッ
ド形成用の絶縁層が施されたベース基板の接続パッドへ
導電性接着剤を塗布した後、前記基板の機能面をベース
基板側へ対向させて、荷重を加えながら導電性接着剤を
硬化することにより、前記基板及びベース基板を接続
し、その後の封止剤を用いた封止を行うことによって、
前記基板の機能面とベース基板の間にエアギャップを形
成することができる。(5) A metal stud bump having a height smaller than the thickness of the insulating layer is formed on the input / output terminals on the same plane as the functional surface of the substrate, and a conductive adhesive is applied to the metal stud. After transferring to a bump or applying a conductive adhesive to connection pads of a base substrate provided with an insulating layer for forming connection pads, the functional surface of the substrate is opposed to the base substrate side, and a load is applied. By curing the conductive adhesive while connecting the substrate and the base substrate, by performing sealing using a subsequent sealing agent,
An air gap may be formed between the functional surface of the substrate and the base substrate.
【図１】本発明の第１実施例を示す表面弾性波デバイス
の全体構成を示す断面図である。FIG. 1 is a cross-sectional view illustrating an overall configuration of a surface acoustic wave device according to a first embodiment of the present invention.
【図２】図１のＡ部拡大断面図である。FIG. 2 is an enlarged sectional view of a portion A in FIG.
【図３】本発明の第１実施例を示す表面弾性波デバイス
のエアギャップの形成方法の説明図である。FIG. 3 is an explanatory diagram of a method for forming an air gap of the surface acoustic wave device according to the first embodiment of the present invention.
【図４】本発明の第２実施例を示す表面弾性波デバイス
の実装方法を示す図である。FIG. 4 is a diagram illustrating a method of mounting a surface acoustic wave device according to a second embodiment of the present invention.
【図５】本発明の第３実施例を示す表面弾性波デバイス
の実装構造を示す断面図である。FIG. 5 is a sectional view showing a mounting structure of a surface acoustic wave device according to a third embodiment of the present invention.
【図６】従来のＳＡＷトランスバーサル型のフィルタの
構成を示す図である。FIG. 6 is a diagram showing a configuration of a conventional SAW transversal type filter.
【図７】従来の表面弾性波デバイスの実装構造を示す断
面図である。FIG. 7 is a cross-sectional view showing a mounting structure of a conventional surface acoustic wave device.
２１，３１，４１ ベース基板 ２２，３２ 接続パッド ２３，３３，４２ 絶縁層 ２４，４３ 接合部材 ２５，３５，４６ 基板 ２５ａ，４６ａ 基板の機能面 ２６，３６ 入出力端子 ２７，４５ エアギャップ ２８，４７ 封止剤 ３４ 導電性接着剤 ３７ Ａｕスタッドバンプ ４４ キャビティ 21, 31, 41 Base substrate 22, 32 Connection pad 23, 33, 42 Insulating layer 24, 43 Joining member 25, 35, 46 Substrate 25a, 46a Functional surface 26, 36 Input / output terminal 27, 45 Air gap 28, 47 Sealant 34 Conductive Adhesive 37 Au Stud Bump 44 Cavity
Claims (5)
性材料からなる基板を実装し、封止を行う表面弾性波デ
バイスの実装方法において、 前記ベース基板上に接続パッドに対向するように、ＩＤ
Ｔが形成された圧電性材料からなる基板の入出力端子を
接合部材を介して前記基板の機能面を下方にして実装
し、微小なエアギャップを形成することを特徴とする表
面弾性波デバイスの実装方法。1. A method of mounting a surface acoustic wave device on which a substrate made of a piezoelectric material having an IDT formed thereon is mounted on a base substrate, and sealing is performed. ID
A surface acoustic wave device characterized in that the input / output terminals of a substrate made of a piezoelectric material on which T is formed are mounted with the functional surface of the substrate facing downward via a bonding member to form a minute air gap. Implementation method.
性材料からなる基板を実装し、封止を行う表面弾性波デ
バイスの実装方法において、（ａ）前記ベース基板上に
接続パッドに対向するように、ＩＤＴが形成された圧電
性材料からなる基板の入出力端子を接合部材を介して前
記基板の機能面を下方にして実装し、微小なエアギャッ
プを形成する工程と、（ｂ）封止剤を用いた封止工程を
施すことを特徴とする表面弾性波デバイスの実装方法。2. A method of mounting a surface acoustic wave device in which a substrate made of a piezoelectric material having an IDT formed thereon is mounted on a base substrate and sealing is performed, (a) opposing connection pads on the base substrate. Thus, the step of mounting the input / output terminals of the substrate made of the piezoelectric material on which the IDT is formed with the functional surface of the substrate down via the joining member to form a minute air gap; A method of mounting a surface acoustic wave device, comprising performing a sealing step using a stopper.
スの実装方法において、前記基板の機能面と同平面内に
ある入出力端子へバンプ状の接合部材を形成し、前記ベ
ース基板の接続パッドのサイズを前記接合部材のサイズ
より大きく形成し、前記接続パッド形成用の絶縁層が施
された前記ベース基板へ対向させるように、前記基板の
機能面を前記ベース基板へ搭載した後、前記基板と前記
ベース基板を前記接合部材で接続することを特徴とする
表面弾性波デバイスの実装方法。3. The method for mounting a surface acoustic wave device according to claim 1, wherein a bump-shaped joining member is formed on an input / output terminal located on the same plane as a functional surface of the substrate, and the base substrate is connected. The size of the pad is formed larger than the size of the bonding member, and after mounting the functional surface of the substrate to the base substrate so as to face the base substrate provided with the insulating layer for forming the connection pad, A method for mounting a surface acoustic wave device, comprising connecting a substrate and the base substrate with the joining member.
スの実装方法において、前記ベース基板の接続パッドへ
バンプ状接合部材を形成し、前記基板の入出力端子のサ
イズを前記接合部材のサイズより大きく形成し、更に、
前記接続パッド形成用の絶縁層が形成されたベース基板
へ対向させるように、前記基板の機能面を前記ベース基
板へ搭載した後、前記基板と前記ベース基板を前記接合
部材で接続することを特徴とする表面弾性波デバイスの
実装方法。4. The method of mounting a surface acoustic wave device according to claim 1, wherein a bump-shaped bonding member is formed on a connection pad of the base substrate, and the size of input / output terminals of the substrate is reduced by the size of the bonding member. Formed larger,
After mounting a functional surface of the substrate on the base substrate so as to face the base substrate on which the insulating layer for forming the connection pad is formed, the substrate and the base substrate are connected by the joining member. Mounting method of the surface acoustic wave device.
スの実装方法において、前記接合部材に絶縁層の厚み寸
法より高さ寸法の小さい金属スタッドバンプを、前記基
板の機能面と同平面内にある入出力端子へ形成し、導電
性接着剤を前記金属スタッドバンプへ転写するか、もし
くは前記接続パッド形成用の絶縁層が施されたベース基
板の接続パッド部分へ前記導電性接着剤を塗布した後、
前記基板の機能面を前記ベース基板側へ対向させて、荷
重を加えながら前記導電性接着剤を硬化することによ
り、前記基板と前記ベース基板を接続することを特徴と
する表面弾性波デバイスの実装方法。5. The mounting method of a surface acoustic wave device according to claim 1, wherein a metal stud bump having a height smaller than a thickness of an insulating layer is provided on the joining member in the same plane as a functional surface of the substrate. Or the conductive adhesive is transferred to the metal stud bumps, or the conductive adhesive is applied to connection pad portions of a base substrate provided with an insulating layer for forming the connection pads. After doing
Mounting the surface acoustic wave device by connecting the substrate and the base substrate by setting the functional surface of the substrate to the base substrate side and curing the conductive adhesive while applying a load. Method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17226896A JP3710560B2 (en) | 1996-07-02 | 1996-07-02 | Surface acoustic wave device mounting structure and mounting method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17226896A JP3710560B2 (en) | 1996-07-02 | 1996-07-02 | Surface acoustic wave device mounting structure and mounting method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1022763A true JPH1022763A (en) | 1998-01-23 |
| JP3710560B2 JP3710560B2 (en) | 2005-10-26 |
Family
ID=15938760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17226896A Expired - Lifetime JP3710560B2 (en) | 1996-07-02 | 1996-07-02 | Surface acoustic wave device mounting structure and mounting method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3710560B2 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6467139B1 (en) | 1998-08-03 | 2002-10-22 | Nec Corporation | Mounting structure and mounting method for surface acoustic wave element |
| WO2004109912A1 (en) * | 2003-06-03 | 2004-12-16 | Toyo Communication Equipment Co., Ltd. | Saw device manufacturing method |
| JP2007028172A (en) * | 2005-07-15 | 2007-02-01 | Alps Electric Co Ltd | Surface acoustic wave device |
| US7898360B2 (en) | 2007-11-22 | 2011-03-01 | Panasonic Corporation | Surface acoustic wave filter and surface acoustic wave duplexer |
| US20140354114A1 (en) * | 2013-06-03 | 2014-12-04 | Taiyo Yuden Co., Ltd. | Acoustic wave device and method of fabricating the same |
| US20210031433A1 (en) * | 2017-11-08 | 2021-02-04 | Hytech Worldwide, Inc. | Three Dimensional Thermoforming and Lamination |
| US11843221B2 (en) | 2020-03-30 | 2023-12-12 | Namuga, Co., Ltd. | Light source module for emitting high density beam and method for controlling the same |
-
1996
- 1996-07-02 JP JP17226896A patent/JP3710560B2/en not_active Expired - Lifetime
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6467139B1 (en) | 1998-08-03 | 2002-10-22 | Nec Corporation | Mounting structure and mounting method for surface acoustic wave element |
| WO2004109912A1 (en) * | 2003-06-03 | 2004-12-16 | Toyo Communication Equipment Co., Ltd. | Saw device manufacturing method |
| US7183125B2 (en) | 2003-06-03 | 2007-02-27 | Toyo Communication Equipment Co., Ltd. | Method for manufacturing surface acoustic wave device |
| JP2007028172A (en) * | 2005-07-15 | 2007-02-01 | Alps Electric Co Ltd | Surface acoustic wave device |
| US7898360B2 (en) | 2007-11-22 | 2011-03-01 | Panasonic Corporation | Surface acoustic wave filter and surface acoustic wave duplexer |
| US20140354114A1 (en) * | 2013-06-03 | 2014-12-04 | Taiyo Yuden Co., Ltd. | Acoustic wave device and method of fabricating the same |
| US9751109B2 (en) * | 2013-06-03 | 2017-09-05 | Taiyo Yuden Co., Ltd. | Acoustic wave device and method of fabricating the same |
| US20210031433A1 (en) * | 2017-11-08 | 2021-02-04 | Hytech Worldwide, Inc. | Three Dimensional Thermoforming and Lamination |
| US11685102B2 (en) * | 2017-11-08 | 2023-06-27 | Hytech Worldwide, Inc. | Three dimensional thermoforming and lamination |
| US11843221B2 (en) | 2020-03-30 | 2023-12-12 | Namuga, Co., Ltd. | Light source module for emitting high density beam and method for controlling the same |
| US11888289B2 (en) | 2020-03-30 | 2024-01-30 | Namuga, Co., Ltd. | Light source module allowing differential control according to distance to subject and method for controlling the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3710560B2 (en) | 2005-10-26 |
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