JP2007028172A - Surface acoustic wave device - Google Patents

Surface acoustic wave device Download PDF

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Publication number
JP2007028172A
JP2007028172A JP2005206935A JP2005206935A JP2007028172A JP 2007028172 A JP2007028172 A JP 2007028172A JP 2005206935 A JP2005206935 A JP 2005206935A JP 2005206935 A JP2005206935 A JP 2005206935A JP 2007028172 A JP2007028172 A JP 2007028172A
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JP
Japan
Prior art keywords
vibration space
sheet
piezoelectric substrate
insulating substrate
surface acoustic
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Japanese (ja)
Inventor
Kyosuke Ozaki
恭輔 尾崎
Shigeru Ishii
滋 石井
Seiki Sugaizumi
清喜 菅泉
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Alps Alpine Co Ltd
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Alps Electric Co Ltd
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Priority to JP2005206935A priority Critical patent/JP2007028172A/en
Publication of JP2007028172A publication Critical patent/JP2007028172A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a highly-productive, inexpensive and miniaturized surface acoustic device. <P>SOLUTION: In the surface acoustic wave device, a sheet 5 for reducing the height of a vibration space part 9 is stuck to the surface of an insulating substrate 1 in the vibration space part 9 in a state opposed to combteeth part 7a and the vibration space part 9 formed between the insulating substrate 1 and a piezoelectric substrate 6 is sealed in a state that the piezoelectric substrate 6 is covered with a sealing resin part 10. Thereby the height of the vibration space part 9 can be reduced by the sheet 5, the intrusion of the sealing resin part 10 into the vibration space part 9 can be suppressed, a highly-operable and inexpensive sheet 5 can be obtained because the sheet 5 is simply stuck to the insulating substrate 1, and a laterally small-sized sheet 5 can be obtained because the sheet 5 is arranged oppositely to the combteeth part 7a. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、種々の電気機器に使用される共振器やフィルタ等に適用して好適な表面弾性波ディバイスに関するものである。   The present invention relates to a surface acoustic wave device suitable for application to resonators and filters used in various electric devices.

従来の表面弾性波ディバイスの図面を説明すると、図３は従来の表面弾性波ディバイスに係る要部断面図であり、次に、従来の表面弾性波ディバイスの構成を図３に基づいて説明すると、絶縁基板５１の上面には、ここでは図示しないが、導電体が設けられており、また、圧電基板５２の下面５２ａには、ここでは図示しないが、櫛歯部と電極を有する櫛歯電極が設けられ、この圧電基板５２は、絶縁基板５１に対向した状態で配置されると共に、櫛歯電極の電極と絶縁基板５１上の導電材が導体バンプ５３によって接続され、この導体バンプ５３によって、絶縁基板５１と圧電基板５２間には、振動空間部５４が形成されている。   FIG. 3 is a cross-sectional view of a main part of a conventional surface acoustic wave device. Next, the configuration of the conventional surface acoustic wave device will be described with reference to FIG. Although not shown here, a conductor is provided on the upper surface of the insulating substrate 51, and a lower electrode 52a of the piezoelectric substrate 52 is provided with a comb electrode having a comb tooth portion and an electrode (not shown here). The piezoelectric substrate 52 is disposed so as to face the insulating substrate 51, and the electrode of the comb electrode and the conductive material on the insulating substrate 51 are connected by the conductor bump 53. A vibration space portion 54 is formed between the substrate 51 and the piezoelectric substrate 52.

シリコーン樹脂が塗布されて形成された環状のダム５５は、櫛歯電極の櫛歯部を囲むように、絶縁基板５１と圧電基板５２間に設けられ、このダム５５によって振動空間部５４を塞ぐと共に、封止樹脂部５６は、圧電基板５２の全外周を覆った状態で、絶縁基板５１と圧電基板５２との間に充填され、この封止樹脂部５６によって振動空間部５４が封止され、封止樹脂部５６は、ダム５５によって振動空間部５４への流入が防止されて、従来の表面弾性波ディバイスが形成されている（例えば、特許文献１参照）。
特開平５−９０８８５号公報（第３頁、図３） An annular dam 55 formed by applying a silicone resin is provided between the insulating substrate 51 and the piezoelectric substrate 52 so as to surround the comb-tooth portion of the comb-tooth electrode, and the vibration space portion 54 is blocked by the dam 55. The sealing resin portion 56 is filled between the insulating substrate 51 and the piezoelectric substrate 52 while covering the entire outer periphery of the piezoelectric substrate 52, and the vibration space portion 54 is sealed by the sealing resin portion 56, The sealing resin portion 56 is prevented from flowing into the vibration space portion 54 by the dam 55, and a conventional surface acoustic wave device is formed (see, for example, Patent Document 1).
Japanese Patent Laid-Open No. 5-90885 (page 3, FIG. 3)

しかし、従来の表面弾性波ディバイスは、振動空間部５４への封止樹脂部５６の流入防止のために、ダム５５が塗布によって設けられるため、その作業が面倒で、生産性が悪く、また、ダム５５は、導体バンプ５３と櫛歯部との間に設けられるため、横方向には、ダム５５形成用のスペースが必要で、横方向に大型になるという問題がある。   However, in the conventional surface acoustic wave device, the dam 55 is provided by coating in order to prevent the sealing resin portion 56 from flowing into the vibration space portion 54, so that the work is troublesome, the productivity is poor, Since the dam 55 is provided between the conductor bump 53 and the comb tooth portion, there is a problem that a space for forming the dam 55 is required in the lateral direction and the size is increased in the lateral direction.

本発明は、このような従来技術の実情に鑑みてなされたもので、その目的は、生産性が良く、安価で、小型の表面弾性波ディバイスを提供することにある。   The present invention has been made in view of the actual situation of the prior art, and an object of the present invention is to provide a small surface acoustic wave device which is good in productivity, inexpensive and small.

上記の目的を達成するために、本発明の第１の解決手段として、導電体を設けた絶縁基板と、櫛歯部と電極を有する櫛歯電極が一面に設けられた圧電基板と、この圧電基板と前記絶縁基板との間に振動空間部を形成し、前記導電体と前記櫛歯電極の前記電極とを接続する導体バンプと、前記圧電基板を覆った状態で、前記絶縁基板と前記圧電基板との間に設けられて前記振動空間部を密封する封止樹脂部とを備え、前記振動空間部内の前記絶縁基板上には、前記櫛歯部に対向した状態で、前記振動空間部の高さを小さくするためのシートを付着した構成とした。   In order to achieve the above object, as a first solving means of the present invention, an insulating substrate provided with a conductor, a piezoelectric substrate provided with a comb-teeth electrode having a comb-teeth portion and an electrode, and the piezoelectric substrate A vibration space is formed between the substrate and the insulating substrate, and the insulating substrate and the piezoelectric substrate are covered with the conductor bumps connecting the conductors and the electrodes of the comb electrodes and the piezoelectric substrate. A sealing resin portion provided between the substrate and sealing the vibration space portion, and on the insulating substrate in the vibration space portion, the vibration space portion of the vibration space portion facing the comb tooth portion. The sheet was attached to reduce the height.

また、第２の解決手段として、前記封止樹脂部には、前記圧電基板と前記シートとの間の間隔よりも平均粒径の大きなフィラーを混入した構成とした。   As a second solution, the sealing resin portion is mixed with a filler having an average particle size larger than the interval between the piezoelectric substrate and the sheet.

本発明の表面弾性波ディバイスにおいて、振動空間部内の絶縁基板上には、櫛歯部に対向した状態で、振動空間部の高さを小さくするためのシートを付着し、この状態で、封止樹脂部が圧電基板を覆った状態で、絶縁基板と圧電基板との間に設けられて振動空間部を密封するようにしたため、シートによって振動空間部の高さを小さくし、振動空間部への封止樹脂部の浸入を抑えることができると共に、シートは、絶縁基板に付着すれば良く、従来の塗布するダムに比して、その作業性が良く、安価なものが得られ、また、シートは、櫛歯部と対向して配置したため、横方向に小型のものが得られる。   In the surface acoustic wave device of the present invention, a sheet for reducing the height of the vibration space portion is attached to the insulating substrate in the vibration space portion in a state facing the comb teeth portion, and in this state, sealing is performed. With the resin portion covering the piezoelectric substrate, the vibration space portion is sealed between the insulating substrate and the piezoelectric substrate so that the height of the vibration space portion is reduced by the sheet, and the vibration space portion is connected to the vibration space portion. It is possible to suppress the intrusion of the sealing resin portion, and the sheet only needs to adhere to the insulating substrate. Compared to a conventional dam to be applied, the workability is good and an inexpensive one can be obtained. Is arranged facing the comb-tooth portion, so that a small size can be obtained in the lateral direction.

また、封止樹脂部には、圧電基板とシートとの間の間隔よりも平均粒径の大きなフィラーを混入したため、振動空間部への封止樹脂部の浸入をより確実に防止できる。   In addition, since the filler having a larger average particle diameter than the interval between the piezoelectric substrate and the sheet is mixed in the sealing resin portion, the sealing resin portion can be more reliably prevented from entering the vibration space portion.

発明の実施の形態について図面を参照して説明すると、図１は本発明の表面弾性波ディバイスに係る要部断面図、図２は本発明の表面弾性波ディバイスに係る要部の拡大断面図であり、次に、本発明の表面弾性波ディバイスに係る構成を図１、図２に基づいて説明すると、セラミック材等の絶縁材の積層基板からなる四角形の絶縁基板１は、複数枚の絶縁シートが積層されて形成され、この絶縁基板１には、上面と積層間に設けられた導電パターンからなる導電体２と、下面に設けられた導電パターンからなる複数の外部接続用の端子３と、導電体２間、及び導電体２と端子３間を接続するスルーホール等の接続体４を有する。   DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Referring to the drawings, an embodiment of the present invention will be described. FIG. 1 is a cross-sectional view of a main part according to the surface acoustic wave device of the present invention, and FIG. 2 is an enlarged cross-sectional view of a main part according to the surface acoustic wave device of the present invention. Next, the configuration of the surface acoustic wave device according to the present invention will be described with reference to FIGS. 1 and 2. A rectangular insulating substrate 1 made of a laminated substrate of insulating materials such as ceramic materials is composed of a plurality of insulating sheets. The insulating substrate 1 includes a conductor 2 made of a conductive pattern provided between the upper surface and the laminate, a plurality of external connection terminals 3 made of a conductive pattern provided on the lower surface, A connection body 4 such as a through hole for connecting the conductors 2 and between the conductors 2 and the terminals 3 is provided.

絶縁薄板や金属薄板等からなる四角形のシート５は、導電体２間に位置した状態で、絶縁基板１の上面に付着（接着）されると共に、四角形の圧電基板６の一面（下面）には、櫛歯電極７が設けられ、この櫛歯電極７は、櫛歯部７ａと、この櫛歯部７ａに繋がった電極７ｂを有すると共に、電極７ｂには、半田等で形成された導体バンプ８が設けられている。   A rectangular sheet 5 made of an insulating thin plate, a metal thin plate, or the like is attached (adhered) to the upper surface of the insulating substrate 1 while being positioned between the conductors 2, and on one surface (lower surface) of the rectangular piezoelectric substrate 6. The comb-teeth electrode 7 includes a comb-teeth portion 7a and an electrode 7b connected to the comb-teeth portion 7a. The electrode 7b includes a conductor bump 8 formed of solder or the like. Is provided.

そして、圧電基板６は、絶縁基板１に対向して配置された状態で、導体バンプ８が導体部２に接続され、この導体バンプ８によって、絶縁基板１と圧電基板６間に振動空間部９が形成される。   In the state where the piezoelectric substrate 6 is disposed so as to face the insulating substrate 1, the conductor bump 8 is connected to the conductor portion 2, and the vibration space portion 9 is interposed between the insulating substrate 1 and the piezoelectric substrate 6 by the conductor bump 8. Is formed.

この時、櫛歯部７ａは、シート５に対向した状態となって、このシート５によって振動空間部９の高さが小さくなっている。   At this time, the comb-tooth portion 7 a is in a state of facing the sheet 5, and the height of the vibration space portion 9 is reduced by the sheet 5.

絶縁樹脂からなる封止樹脂部１０は、圧電基板６の全外周を覆った状態で、絶縁基板１と圧電基板６との間に介在して、この封止樹脂部１０によって、絶縁基板１と圧電基板６間（振動空間部９）の封止と、圧電基板６の保護が行われている。   The sealing resin portion 10 made of an insulating resin is interposed between the insulating substrate 1 and the piezoelectric substrate 6 in a state of covering the entire outer periphery of the piezoelectric substrate 6, and the sealing resin portion 10 and the insulating substrate 1 are interposed between the insulating substrate 1 and the piezoelectric substrate 6. Sealing between the piezoelectric substrates 6 (vibration space portion 9) and protection of the piezoelectric substrates 6 are performed.

そして、シート５によって、振動空間部９がの高さが小さくなっているため、振動空間部９への封止樹脂部１０の浸入が抑えられると共に、封止樹脂部１０は、圧電基板１とシート５との間の間隔よりも平均粒径の大きなフィラー１０ａが混入されているため、振動空間部９への封止樹脂部１０の浸入をより確実に防止できて、本発明の表面弾性波ディバイスが形成されている。   And since the height of the vibration space portion 9 is reduced by the sheet 5, entry of the sealing resin portion 10 into the vibration space portion 9 is suppressed, and the sealing resin portion 10 is connected to the piezoelectric substrate 1. Since the filler 10a having a larger average particle diameter than the space between the sheet 5 is mixed, it is possible to more reliably prevent the sealing resin portion 10 from entering the vibration space portion 9, and the surface acoustic wave according to the present invention. Devices are formed.

このような構成を有する本発明の表面弾性波ディバイスは、ここでは図示しないが、端子３が外部機器のマザー基板上に載置され、端子３がマザー基板上の配線パターンに接続されるようになっている。   Although the surface acoustic wave device of the present invention having such a configuration is not shown here, the terminal 3 is placed on the mother board of the external device, and the terminal 3 is connected to the wiring pattern on the mother board. It has become.

本発明の表面弾性波ディバイスに係る要部断面図である。It is principal part sectional drawing which concerns on the surface acoustic wave device of this invention. 本発明の表面弾性波ディバイス係る要部の拡大断面図である。It is an expanded sectional view of the principal part concerning the surface acoustic wave device of the present invention. 従来の表面弾性波ディバイスに係る要部断面図である。It is principal part sectional drawing concerning the conventional surface acoustic wave device.

符号の説明Explanation of symbols

１ 絶縁基板
２ 導電体
３ 端子
４ 接続体
５ シート
６ 圧電基板
７ 櫛歯電極
７ａ 櫛歯部
７ｂ 電極
８ 導体バンプ
９ 振動空間部
１０ 封止樹脂部
１０ａ フィラー DESCRIPTION OF SYMBOLS 1 Insulating substrate 2 Conductor 3 Terminal 4 Connection body 5 Sheet 6 Piezoelectric substrate 7 Comb electrode 7a Comb portion 7b Electrode 8 Conductor bump 9 Vibration space portion 10 Sealing resin portion 10a Filler

Claims (2)

導電体を設けた絶縁基板と、櫛歯部と電極を有する櫛歯電極が一面に設けられた圧電基板と、この圧電基板と前記絶縁基板との間に振動空間部を形成し、前記導電体と前記櫛歯電極の前記電極とを接続する導体バンプと、前記圧電基板を覆った状態で、前記絶縁基板と前記圧電基板との間に設けられて前記振動空間部を密封する封止樹脂部とを備え、前記振動空間部内の前記絶縁基板上には、前記櫛歯部に対向した状態で、前記振動空間部の高さを小さくするためのシートを付着したことを特徴とする表面弾性波ディバイス。 An insulating substrate provided with a conductor, a piezoelectric substrate provided with a comb-teeth electrode having a comb-teeth portion and an electrode, and a vibration space portion formed between the piezoelectric substrate and the insulating substrate; A sealing resin portion that is provided between the insulating substrate and the piezoelectric substrate in a state of covering the piezoelectric substrate and sealing the vibration space portion in a state of covering the piezoelectric substrate. And a sheet for reducing the height of the vibration space portion is attached to the insulating substrate in the vibration space portion so as to face the comb teeth portion. Devices. 前記封止樹脂部には、前記圧電基板と前記シートとの間の間隔よりも平均粒径の大きなフィラーを混入したことを特徴とする請求項１記載の表面弾性波ディバイス。
The surface acoustic wave device according to claim 1, wherein a filler having an average particle diameter larger than an interval between the piezoelectric substrate and the sheet is mixed in the sealing resin portion.
JP2005206935A 2005-07-15 2005-07-15 Surface acoustic wave device Pending JP2007028172A (en)

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012007252A1 (en) * 2010-07-12 2012-01-19 Epcos Ag Module package and production method
JP2013031117A (en) * 2011-07-29 2013-02-07 Kyocera Corp Electronic component having elastic wave device
WO2013018700A1 (en) * 2011-07-29 2013-02-07 京セラ株式会社 Electronic part comprising acoustic wave device
US9264016B2 (en) 2012-11-15 2016-02-16 Nihon Dempa Kogyo Co., Ltd. Piezoelectric component having a cover layer including resin that contains translucent filler
JP2018093389A (en) * 2016-12-05 2018-06-14 太陽誘電株式会社 Electronic component

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09162688A (en) * 1995-12-11 1997-06-20 Matsushita Electric Ind Co Ltd Surface acoustic wave device
JPH1022763A (en) * 1996-07-02 1998-01-23 Oki Electric Ind Co Ltd Mounting method for surface acoustic wave device
JP2004039945A (en) * 2002-07-05 2004-02-05 Murata Mfg Co Ltd Electron device and its manufacturing method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09162688A (en) * 1995-12-11 1997-06-20 Matsushita Electric Ind Co Ltd Surface acoustic wave device
JPH1022763A (en) * 1996-07-02 1998-01-23 Oki Electric Ind Co Ltd Mounting method for surface acoustic wave device
JP2004039945A (en) * 2002-07-05 2004-02-05 Murata Mfg Co Ltd Electron device and its manufacturing method

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012007252A1 (en) * 2010-07-12 2012-01-19 Epcos Ag Module package and production method
JP2013531387A (en) * 2010-07-12 2013-08-01 エプコス アーゲー Module package and manufacturing method thereof
US9576870B2 (en) 2010-07-12 2017-02-21 Epcos Ag Module package and production method
JP2013031117A (en) * 2011-07-29 2013-02-07 Kyocera Corp Electronic component having elastic wave device
WO2013018700A1 (en) * 2011-07-29 2013-02-07 京セラ株式会社 Electronic part comprising acoustic wave device
US9293684B2 (en) 2011-07-29 2016-03-22 Kyocera Corporation Electronic part comprising acoustic wave device
US9264016B2 (en) 2012-11-15 2016-02-16 Nihon Dempa Kogyo Co., Ltd. Piezoelectric component having a cover layer including resin that contains translucent filler
JP2018093389A (en) * 2016-12-05 2018-06-14 太陽誘電株式会社 Electronic component

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