JPH10223410A - Production of voltage nonlinear resistor - Google Patents
Production of voltage nonlinear resistorInfo
- Publication number
- JPH10223410A JPH10223410A JP9021200A JP2120097A JPH10223410A JP H10223410 A JPH10223410 A JP H10223410A JP 9021200 A JP9021200 A JP 9021200A JP 2120097 A JP2120097 A JP 2120097A JP H10223410 A JPH10223410 A JP H10223410A
- Authority
- JP
- Japan
- Prior art keywords
- powder
- voltage
- linear resistor
- added
- voltage non
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Thermistors And Varistors (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、例えば酸化亜鉛形
避雷器に組み込まれる電圧非直線抵抗体の製造方法に関
するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a voltage nonlinear resistor incorporated in, for example, a zinc oxide surge arrester.
【0002】[0002]
【従来の技術】電圧非直線抵抗体を避雷器に用いる場
合、送配電線の電圧に対応するため電圧非直線抵抗体を
必要なだけ直列または並列に接続していた。2. Description of the Related Art When a voltage non-linear resistor is used for a lightning arrester, voltage non-linear resistors are connected in series or in parallel as necessary to cope with the voltage of a transmission and distribution line.
【0003】従来の電圧非直線抵抗体は、まず酸化亜鉛
を主成分として、副成分として少量の酸化ケイ素、酸化
ビスマス等の金属酸化物の粉砕物を加え、有機バインダ
ー溶液と混合して得られたスラリー状の原料を噴霧乾燥
し造粒粉とし、次にこの造粒粉の含水率調整を行い所定
の形状に成形し、この成形体を脱脂してから予備焼成し
て素体とし、その後この素体側面に高抵抗層を形成した
のち焼成して焼結体とし、最後にこの焼結体の両面に電
極を形成して作られていた。A conventional voltage non-linear resistor is obtained by first adding zinc oxide as a main component, a small amount of pulverized metal oxide such as silicon oxide and bismuth oxide as an auxiliary component, and mixing with an organic binder solution. The slurry-like raw material is spray-dried into granulated powder, and then the moisture content of the granulated powder is adjusted to form a predetermined shape, and the formed body is degreased and pre-fired to obtain a base body. A high resistance layer was formed on the side surface of the element body, fired to form a sintered body, and finally electrodes were formed on both surfaces of the sintered body.
【0004】[0004]
【発明が解決しようとする課題】避雷器において、電圧
非直線抵抗体の接続数が増加すると避雷器が大型化する
ばかりでなく、電流分担のアンバランスが生じる。その
対策として電圧非直線抵抗体の動作開始電圧の高圧化が
望まれている。In the surge arrester, when the number of connected voltage non-linear resistors increases, the surge arrester not only increases in size but also causes imbalance in current sharing. As a countermeasure, it is desired to increase the operation start voltage of the voltage non-linear resistor.
【0005】電圧非直線抵抗体の動作開始電圧は主に添
加物の種類や添加量により決定されている。酸化ケイ素
は動作開始電圧の上昇を助長する元素の一つとして知ら
れているが、酸化ケイ素の添加量や粒子径といったパラ
メータによって混合粉砕したときのスラリー粘性が変化
してくる。上記製造方法では、特性上必要とする添加量
を混合すると、スラリーがゲル化を起こしてしまい、電
圧非直線抵抗体が製造できないという問題点を有してい
た。[0005] The operation starting voltage of the voltage non-linear resistor is mainly determined by the type and amount of the additive. Silicon oxide is known as one of the elements that promotes an increase in the operation start voltage, but the viscosity of the slurry when mixed and pulverized varies depending on parameters such as the amount of silicon oxide added and the particle diameter. In the above-mentioned manufacturing method, there is a problem that if the amount of addition required for the characteristics is mixed, the slurry is gelled, and a voltage non-linear resistor cannot be manufactured.
【0006】そこで本発明は、動作開始電圧の向上した
電圧非直線抵抗体を提供することを目的とするものであ
る。Accordingly, an object of the present invention is to provide a voltage non-linear resistor having an improved operation start voltage.
【0007】[0007]
【課題を解決するための手段】この目的を達成するため
に本発明の電圧非直線抵抗体の製造方法は、酸化亜鉛を
主成分とする造粒粉にケイ素化合物を添加して所定の形
状に成形し成形体を得る工程と、次にこの成形体を焼成
して焼結体を得る工程と、次いでこの焼結体表面に少な
くとも一対の電極を形成する工程とを有するものであ
り、造粒粉にケイ素化合物を添加するため、スラリーが
ゲル化することもなく、特性上必要なケイ素化合物を添
加することができるので、高い動作開始電圧を有する電
圧非直線抵抗体を得ることができる。In order to achieve this object, a method for manufacturing a voltage non-linear resistor according to the present invention comprises adding a silicon compound to granulated powder containing zinc oxide as a main component to form a predetermined shape. Molding to obtain a molded body, then firing the molded body to obtain a sintered body, and then forming at least a pair of electrodes on the surface of the sintered body, granulation Since the silicon compound is added to the powder, the silicon compound required for the characteristics can be added without causing the slurry to gel, so that a voltage non-linear resistor having a high operation starting voltage can be obtained.
【0008】[0008]
【発明の実施の形態】本発明の請求項1に記載の発明
は、酸化亜鉛を主成分とする造粒粉にケイ素化合物を添
加して所定の形状に成形し成形体を得る工程と、次にこ
の成形体を焼成して焼結体を得る工程と、次いでこの焼
結体表面に少なくとも一対の電極を形成する工程とを有
する電圧非直線抵抗体の製造方法であり、動作開始電圧
の高い電圧非直線抵抗体を得ることができる。DESCRIPTION OF THE PREFERRED EMBODIMENTS The invention according to claim 1 of the present invention comprises a step of adding a silicon compound to a granulated powder containing zinc oxide as a main component and molding it into a predetermined shape to obtain a molded article; A step of firing the molded body to obtain a sintered body, and then a step of forming at least a pair of electrodes on the surface of the sintered body, a method of manufacturing a voltage non-linear resistor, the operation start voltage is high A voltage non-linear resistor can be obtained.
【0009】請求項2に記載の発明は、平均粒径1〜1
0μmのケイ素化合物を用いる請求項1に記載の電圧非
直線抵抗体の製造方法であり、従来と変わらない成形条
件で成形体を得ることができる。The invention according to claim 2 is characterized in that the average particle size is 1 to 1
The method for producing a voltage non-linear resistor according to claim 1, wherein a silicon compound having a thickness of 0 µm is used, and a molded article can be obtained under the same molding conditions as in the related art.
【0010】請求項3に記載の発明は、ケイ素化合物の
添加量をSiが0.5〜5.0モル%含有されるように
する請求項1に記載の電圧非直線抵抗体の製造方法であ
り、電圧非直線抵抗器の動作開始電圧を向上させること
ができる。According to a third aspect of the present invention, there is provided a method for manufacturing a voltage nonlinear resistor according to the first aspect, wherein the silicon compound is added in an amount of 0.5 to 5.0 mol%. Yes, the operation start voltage of the voltage non-linear resistor can be improved.
【0011】請求項4に記載の発明は、ケイ素化合物を
添加した後、含水率が0.5〜2.5重量%となるよう
に含水率調整を行う請求項1に記載の電圧非直線抵抗体
の製造方法であり、放電耐量特性の劣化を防止すること
ができる。According to a fourth aspect of the present invention, after the addition of the silicon compound, the water content is adjusted so that the water content becomes 0.5 to 2.5% by weight. This is a method for manufacturing a body, and can prevent deterioration of discharge withstand characteristics.
【0012】以下、本発明の一実施の形態により説明す
る。 (実施の形態)まず、原料粉末の合計量を100モル%
とした場合、主成分ZnO粉末に対し、副成分としてビ
スマス0.5モル%、コバルト0.2モル%、マンガン
0.5モル%、アンチモン1.0モル%、クロム0.5
モル%、ニッケル1.0モル%、アルミニウム5×10
-3モル%、ほう素2×10-2モル%となるように、それ
ぞれの金属酸化物粉末を秤量して添加した。この時ほう
素については分散性の観点からほうけい酸ビスマスなど
のガラス状態で添加することが望ましい。次にこの原料
粉末に純水、バインダ、分散剤を加え、ボールミルにて
十分混合しスラリーを得た。次にこのスラリーをスプレ
ードライヤーを用いて、噴霧乾燥、造粒し、平均粒径1
00〜200μmの造粒粉を得た。その後この造粒粉に
平均粒径が1〜10ミクロンのケイ素0.5モル%〜1
0.0モル%を酸化ケイ素粉末の状態で混合した後、含
水率が1.0重量%となるように純水を加え、Vブレン
ダー混合機にて30分混合した。Hereinafter, an embodiment of the present invention will be described. (Embodiment) First, the total amount of the raw material powder was set to 100 mol%.
, 0.5 mol% of bismuth, 0.2 mol% of cobalt, 0.5 mol% of manganese, 1.0 mol% of antimony, 0.5 mol% of chromium
Mol%, nickel 1.0 mol%, aluminum 5 × 10
Each metal oxide powder was weighed and added so as to be -3 mol% and boron 2 × 10 -2 mol%. At this time, it is desirable to add boron in a glass state such as bismuth borosilicate from the viewpoint of dispersibility. Next, pure water, a binder, and a dispersant were added to the raw material powder, and the mixture was sufficiently mixed with a ball mill to obtain a slurry. Next, this slurry was spray-dried and granulated using a spray drier,
A granulated powder of 00 to 200 μm was obtained. Thereafter, 0.5 mol% of silicon having an average particle diameter of 1 to 10 μm to 1
After mixing 0.0 mol% in the state of silicon oxide powder, pure water was added so that the water content became 1.0% by weight, and the mixture was mixed for 30 minutes by a V blender mixer.
【0013】この時の含水率が0.5〜2.5重量%と
なるように調整することが好ましいが、これは次工程の
圧縮成形の際、造粒粉が潰れないようにし、成形体密度
を適度な高い値にするものである。成形体密度を調整す
ることにより、焼結体のポアの割合を少なくすることが
でき、放電耐量特性が劣化するのを防止することができ
る。また含水率調整により、酸化ケイ素を粉末の状態で
添加したとしても分散性には問題がない。It is preferable to adjust the water content at this time so as to be 0.5 to 2.5% by weight. The density is set to a moderately high value. By adjusting the density of the compact, the proportion of pores in the sintered body can be reduced, and the deterioration of the discharge withstand characteristics can be prevented. Even if silicon oxide is added in a powder state by adjusting the water content, there is no problem in dispersibility.
【0014】次に酸化ケイ素粉末を添加した造粒粉の含
水率が0.5〜2.5重量%となるように含水率調整を
行った後、直径25mm、厚さ7mmの大きさに、400kg
/cm 3の圧力で圧縮成形し、成形体を得た。Next, the granulated powder containing the silicon oxide powder is added.
Adjust the water content so that the water content is 0.5 to 2.5% by weight.
After performing, 400 kg in size of 25 mm in diameter and 7 mm in thickness
/cm ThreeTo obtain a molded body.
【0015】次いでこの成形体中の有機成分を除去して
から、900℃で3時間、昇降温速度100℃/hの条
件で予備焼成して仮焼体を得た。この仮焼体の側面に熱
処理により高抵抗層となる酸化物ペーストを塗布した
後、本焼成して側面に高抵抗層を有する焼結体を得た。
この高抵抗層は側面部の絶縁抵抗を高めるものであり、
沿面尖烙を防止して、放電耐量を向上させるものであ
る。Next, after removing the organic components from the molded body, the molded body was preliminarily calcined at 900 ° C. for 3 hours at a temperature rising / falling rate of 100 ° C./h to obtain a calcined body. An oxide paste that becomes a high-resistance layer by heat treatment was applied to the side surface of the calcined body, followed by main firing to obtain a sintered body having a high-resistance layer on the side surface.
This high resistance layer is to increase the insulation resistance of the side part,
It is intended to prevent creeping on the surface and improve the discharge resistance.
【0016】次いでこの焼結体の両端面に銀ペーストを
印刷し、500℃の温度で1時間熱処理して電極を形成
し、電圧非直線抵抗体を得た。Next, a silver paste was printed on both end surfaces of the sintered body and heat-treated at a temperature of 500 ° C. for 1 hour to form electrodes, thereby obtaining a voltage non-linear resistor.
【0017】比較検討例として、従来のように、副成分
配合時に他の金属酸化物と同時に酸化ケイ素を0.5〜
2.0モル%添加し、その後の工程は本実施の形態と同
一工程にて比較検討例の電圧非直線抵抗体を得た。ここ
で、酸化ケイ素を2.5モル%以上添加した場合はスラ
リーはゲル化してしまい電圧非直線抵抗体を得ることが
できなかった。As a comparative example, as in the prior art, silicon oxide was mixed with other metal oxides in a content of 0.5 to
2.0 mol% was added, and the subsequent steps were the same as in the present embodiment to obtain a voltage non-linear resistor of a comparative example. Here, when silicon oxide was added in an amount of 2.5 mol% or more, the slurry gelled, and a voltage non-linear resistor could not be obtained.
【0018】(表1)に本実施の形態および比較検討例
による電圧非直線抵抗体の動作開始電圧、電圧比特性
(VmA/V10μA)を示した。Table 1 shows the operation starting voltage and voltage ratio characteristics (VmA / V10 μA) of the voltage non-linear resistor according to the present embodiment and the comparative example.
【0019】[0019]
【表1】 [Table 1]
【0020】ここで、V1mAおよびV10μAは直流
の定電流電源を用いて測定した。この(表1)から明ら
かなように本実施の形態による電圧非直線抵抗体は、酸
化ケイ素を0.5〜5.0モル%の範囲で添加すること
により、動作開始電圧を比例的に変化させることができ
る。しかも従来であればスラリーがゲル化してしまうよ
うな酸化ケイ素の添加量が多い場合でも、電圧非直線抵
抗体を製造することが可能であり、高い動作開始電圧を
有するものが得られる。Here, V1 mA and V10 μA were measured using a DC constant current power supply. As is clear from Table 1, the voltage non-linear resistor according to the present embodiment changes the operation start voltage proportionally by adding silicon oxide in the range of 0.5 to 5.0 mol%. Can be done. In addition, even in the conventional case, even when the amount of silicon oxide added such that the slurry gels is large, a voltage non-linear resistor can be manufactured, and a resistor having a high operation starting voltage can be obtained.
【0021】なお、本実施の形態においてはケイ素をは
じめとする副成分金属元素の添加を酸化物の状態で行っ
たが、焼成により酸化物となり得るものであればどのよ
うな化合物を用いてもかまわない。In this embodiment, the addition of subcomponent metal elements such as silicon is performed in the form of an oxide. However, any compound may be used as long as it can be converted into an oxide by firing. I don't care.
【0022】また、成形体を予備焼成したが、予備焼成
を行わなくてもかまわない。このときは、成形体を焼成
して焼結体を得た後、高抵抗層となる酸化物ペーストを
焼結体側面に塗布し、熱処理して高抵抗層を形成する。Further, although the green body was pre-fired, the pre-fire may not be performed. In this case, after sintering the molded body to obtain a sintered body, an oxide paste to be a high-resistance layer is applied to the side surface of the sintered body and heat-treated to form a high-resistance layer.
【0023】[0023]
【発明の効果】以上、本発明の電圧非直線抵抗体の製造
方法を用いることにより、従来と同じ材料を用いて、動
作開始電圧の高い電圧非直線抵抗体を得ることができ
る。またケイ素の添加量により、直線的に動作開始電圧
を変化させることができるので、所望の動作開始電圧を
有する電圧非直線抵抗体を得ることができる。As described above, by using the method for manufacturing a voltage non-linear resistor of the present invention, a voltage non-linear resistor having a high operation starting voltage can be obtained using the same material as in the prior art. Further, since the operation start voltage can be changed linearly by the addition amount of silicon, a voltage non-linear resistor having a desired operation start voltage can be obtained.
【0024】その結果、従来よりも少ない数の電圧非直
線抵抗体を用いて避雷器を構成することができるので避
雷器の小型化ができるとともに、電流分担のアンバラン
スが生じるのを防止することができる。As a result, the lightning arrester can be constituted by using a smaller number of voltage non-linear resistors than in the prior art, so that the lightning arrester can be downsized and the imbalance of current sharing can be prevented from occurring. .
Claims (4)
化合物を添加して所定の形状に成形し成形体を得る工程
と、次にこの成形体を焼成して焼結体を得る工程と、次
いでこの焼結体表面に少なくとも一対の電極を形成する
工程とを有する電圧非直線抵抗体の製造方法。1. A step of adding a silicon compound to a granulated powder containing zinc oxide as a main component and molding it into a predetermined shape to obtain a molded body, and then firing this molded body to obtain a sintered body And then forming at least a pair of electrodes on the surface of the sintered body.
である請求項1に記載の電圧非直線抵抗体の製造方法。2. The silicon compound has an average particle size of 1 to 10 μm.
The method for manufacturing a voltage non-linear resistor according to claim 1, wherein
〜5.0モル%含有されるようにする請求項1に記載の
電圧非直線抵抗体の製造方法。3. The amount of the silicon compound added is 0.5% Si.
The method for producing a voltage non-linear resistor according to claim 1, wherein the content of the non-linear resistor is set to be about 5.0 mol%.
0.5〜2.5重量%となるように含水率調整を行う請
求項1に記載の電圧非直線抵抗体の製造方法。4. The method for producing a voltage non-linear resistor according to claim 1, wherein after adding the silicon compound, the water content is adjusted so that the water content becomes 0.5 to 2.5% by weight.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9021200A JPH10223410A (en) | 1997-02-04 | 1997-02-04 | Production of voltage nonlinear resistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9021200A JPH10223410A (en) | 1997-02-04 | 1997-02-04 | Production of voltage nonlinear resistor |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH10223410A true JPH10223410A (en) | 1998-08-21 |
Family
ID=12048344
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9021200A Pending JPH10223410A (en) | 1997-02-04 | 1997-02-04 | Production of voltage nonlinear resistor |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH10223410A (en) |
-
1997
- 1997-02-04 JP JP9021200A patent/JPH10223410A/en active Pending
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