JPH10222102A - Semiconductor integrated circuit device and its manufacture and liquid crystal device and electronic equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To prevent an increase of an operation current of an IC and malfunction of the circuit and to perform light shielding on an IC chip without increasing the number of processes by forming a light shielding film on the surface of a passivation film of a semiconductor substrate forming the circuit by using the same material as a substrate electroconductive layer. SOLUTION: On the surface of the semiconductor substrate 20' the circuit consisting of an active element such as a MOSFET or a bipolar transistor and a passive element of resistors and capacitors, etc., is formed. The light shielding film 26B consisting of the same electroconductive layer as the substrate electroconductive layer 26A formed between a pad 24 and a bump 14 is formed on the passivation film 23 covering a circuit part. The light shielding film 26B is formed to cover almost the whole surface of the circuit part, and preferably, to cover an area wider than the area of the circuit part beyond its outer side in order to shield obliquely incident light on the circuit element. This light shielding film 26B has a two-layer structure forming a protective layer consisting of a metal of low resistance such as gold or platinum, etc., on a metal layer.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light-shielding technique for a liquid crystal display and a semiconductor integrated circuit for driving a liquid crystal panel, and more particularly to a technique suitable for use in a display of an electronic device.

[0002]

2. Description of the Related Art Conventionally, a liquid crystal display device is generally used as a display device of a portable electronic device such as a portable telephone. Such a liquid crystal display device includes a liquid crystal panel in which liquid crystal is sealed between two glass substrates having transparent electrodes, and a semiconductor integrated circuit for driving the liquid crystal panel. As a mounting technique of these devices, for example, as shown in FIG. 1, one glass substrate 11 constituting a liquid crystal panel is formed larger than the other glass substrate 12 so as to form an ITO film or a wiring for a display unit. A wire 13 made of metal or the like is pulled out from the liquid crystal display portion to the peripheral portion, and a semiconductor integrated circuit chip (hereinafter, referred to as an IC chip) 20 is directly attached to the wire 13 on the glass substrate 11 by using a bump 14. glas
There is an implementation method called s).

[0003]

A liquid crystal display device in which an IC chip is mounted on a glass substrate constituting a liquid crystal panel as described above has an outer frame (partition frame) 30 for shielding light as shown in FIG. The liquid crystal display unit faces the opening 31 provided, and the IC chip 20 is covered with a light-shielding frame made of an opaque plastic resin and arranged at a position where it cannot be seen from the outside. However, in order to reduce the size of the glass substrate, the size of the glass substrate cannot be so large, and if the wiring formed on the glass substrate is long, the load on the IC chip 20 increases, and the mounting position of the IC chip 20 is changed to the liquid crystal display unit. Can not be separated from the extreme.

For this reason, a light-shielding outer frame (partition frame) 30 is provided.
Light obliquely enters the inside of the opening 31 provided in the
As shown by symbol A in FIG.
The light may reach the chip 20 or may reach the IC chip 20 by repeating reflection at various interfaces (for example, the front surface and the back surface of the glass substrate 11) existing in the liquid crystal panel as indicated by reference numeral B. As a result, it has been clarified that there is a problem that a light leakage current flows in the IC chip to increase an operation current or a circuit may malfunction.

SUMMARY OF THE INVENTION An object of the present invention is to provide a liquid crystal display device having an IC chip for driving liquid crystal mounted on a glass substrate constituting a liquid crystal panel. An object of the present invention is to provide a technique capable of preventing a circuit from malfunctioning.

Another object of the present invention is to provide a technique capable of shielding an IC chip mounted on a glass substrate constituting a liquid crystal panel without increasing the number of steps in a manufacturing process. .

[0007]

The present invention focuses on the fact that a conductive layer used as a base of a bump formed on an IC chip mounted on a glass substrate constituting a liquid crystal panel can be made of a material having a light shielding property. The conductive layer for under bump is left as a light shielding film above a circuit portion.

According to the above-mentioned means, the light that has entered through the opening of the light-shielding frame is blocked by the light-shielding film so as not to reach the surface of the semiconductor substrate, so that the operating current of the IC increases and the circuit malfunctions. And the conductive layer used as the underlayer of the bumps constitutes the light-shielding film of the circuit part, so that the IC can be manufactured without increasing the number of process steps.
The chip can be shielded from light.

Preferably, the conductive layer and the light-shielding film serving as the base have a single-layer structure of metal or a multilayer structure in which a protective layer made of gold or platinum is formed on the metal layer. Further, when a light-shielding tape is attached to the surface of the semiconductor substrate opposite to the surface on which the pads are formed, the light-shielding property is further improved. Further, it is preferable to mold the periphery of the IC chip with an opaque resin in a state where the IC chip is mounted on a substrate other than the display unit of the liquid crystal device. More desirably, a light-shielding film is preferably formed or attached to at least the surface of the substrate around the IC mounting portion.

[0010]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a sectional view of an example of a liquid crystal device in which a liquid crystal panel effective by applying the present invention and a driving IC thereof are integrally formed. In the liquid crystal device of this embodiment, as shown in the figure, one glass substrate 11 constituting a liquid crystal panel is formed so as to protrude from the other glass substrate 12, and the sealing material 1 is formed along the periphery of the other glass substrate 12.
The glass substrate 11 and the glass substrate 12 are joined at a predetermined interval by the sealing material 15 and the liquid crystal 16 is filled in the gap. Is configured as Pixel electrodes / electrode wirings 13 made of a transparent conductive film, a metal film, or the like are formed on the opposing inner surfaces of the glass substrates 11 and 12, respectively.

When the liquid crystal panel is a simple matrix,
A scanning electrode (common electrode) made of a transparent conductive film is formed on one substrate and a signal electrode (segment electrode) made of a transparent conductive film is formed on the opposite substrate, and a wiring 13 is formed outside the panel of each substrate. Each is pulled out. on the other hand,
In the case of a three-terminal (TFT) active panel, IC
Pixel electrodes and TFTs, and scanning lines and data lines connected to the TFTs are formed on the substrate on which the chip is mounted. The scanning lines or data lines formed of a metal layer or the like are drawn out as 13. In the case of a two-terminal type active panel, a scanning electrode made of a transparent conductive film is formed on one substrate, and a pixel electrode, a two-terminal element, and a
The data lines connected to the terminal elements are formed, and the scanning electrodes and the data wirings 13 are drawn out of the panel of each substrate.

An IC mounting portion 18 is formed on an exposed surface of the glass substrate 11, that is, a portion not facing the substrate 12, and a wiring 13 extends from the display portion 17 on the IC mounting portion 18. An IC chip 20 is directly attached to terminal portions of these wirings via bumps 14. When connecting the bump 14 of the IC chip 20 to the wiring 13, a conductive paste or an anisotropic conductive film may be interposed between the bump 14 and the wiring 13. Although not particularly limited, a mold 19 made of an opaque synthetic resin is formed around the IC chip 20 so that light does not enter from the side of the IC chip. IC
The chip 20 applies a predetermined voltage waveform to the electrodes formed on the display unit 17 and outputs a voltage for driving the liquid crystal 16 sandwiched between the substrates. Reference numerals 41 and 42 denote polarizing plates attached to the front and back of the display unit 17 of the glass substrates 11 and 12, respectively.

In the liquid crystal device having the above configuration, the display section 17 faces the opening 31 provided in the light-shielding frame 30, and the IC chip 20 is covered with the light-shielding frame 30 made of opaque plastic. Placed so that it cannot be seen from the outside. As described above, light that has entered obliquely into the light-blocking frame 30 from the opening 31 is reflected by the glass substrate 1.
1 may directly reach the IC chip 20, or may reach the IC chip 20 by repeating reflection on the front and back surfaces of the glass substrate 11. However, the IC chip 20 according to the present embodiment has a light-shielding film as described later, and shields light so that light does not enter the semiconductor substrate. , And the circuit is prevented from malfunctioning.

On the back surface of the IC chip 20, a light-shielding tape 40 made of, for example, a tape in which an adhesive is applied to aluminum foil is adhered to almost the entire surface so that light from the back surface is prevented from entering. Have been. Further, it is more preferable to form a light shielding film or affix a light shielding tape on the substrate around the IC chip in the IC mounting portion.

In the above embodiment, an ITO (Indium-Tin Oxide) film is used as the conductive transparent electrode film. However, the present invention is not limited to this.
It is also possible to use a transparent electrode material made of a metal oxide having a high melting point such as x, ZnOx or the like.

FIG. 2 is a sectional view of another embodiment of a liquid crystal device in which a driving IC is mounted on a liquid crystal panel effective by applying the present invention. In the liquid crystal device of this embodiment, the lower glass substrate 12 is formed to project more than the upper glass substrate 11. As in the embodiment of FIG. 1, a wiring 13 extends from the display unit 17 to the IC mounting unit 18 on the glass substrate 12, and an IC chip 20 for driving a liquid crystal panel is connected to an end of the wiring 13 via a bump 14. ing.

Incidentally, similarly to FIG. 1, a conductive paste or an anisotropic conductive film may be interposed between the bump and the wiring. The IC chip 20 in this embodiment is also configured so that the periphery thereof is molded with an opaque resin and has a light-shielding film as described later. Are configured to be able to prevent malfunction. A light-shielding tape 40 is attached to almost the entire back surface of the IC chip 20 so that light from the back surface is prevented from entering.
Further, it is more preferable to form a light-shielding film or attach a light-shielding tape on the substrate around the IC mounting portion 18.

FIG. 3 is a sectional view showing still another embodiment of a liquid crystal device in which a liquid crystal panel effective by applying the present invention and a driving IC thereof are integrally formed. The liquid crystal device of this embodiment has a configuration in which both the upper glass substrate 11 and the lower glass substrate 12 have an IC mounting portion 18. As a liquid crystal panel having the configuration shown in FIG. 3, a passive or two-terminal nonlinear element in which a scanning electrode (common electrode) is formed on one substrate inner surface and a signal electrode (segment electrode) is formed on the other substrate surface. An active matrix type included in the pixel is assumed. In these liquid crystal panels, the wiring drawn out becomes a scanning electrode (common electrode) on one substrate and a signal electrode (segment electrode) on the other substrate. The respective glass substrates 11 and 12
The wiring 13 extends upward from the display unit 17 to the IC mounting unit 18.
Are extended, and liquid crystal panel driving IC chips 20 are connected to the respective ends thereof via bumps. As described above, a conductive paste or an anisotropic conductive film may be interposed in the connection portion.

The IC chip 20 in this embodiment is also molded around the periphery with an opaque resin and has a light-shielding film as described later, so that a light leak current flows through the semiconductor substrate and an operating current is reduced. The configuration is such that increase or malfunction of the circuit can be prevented. Further, a light-shielding tape 40 is adhered to almost the entire back surface of the IC chip 20 to prevent light from entering from the back surface. Further, it is more preferable to form a light-shielding film or affix a light-shielding tape on the substrate around each IC mounting portion 18.

In a liquid crystal display device such as a cellular phone, generally, transparent electrodes in the form of stripes are formed on two glass substrates in directions perpendicular to each other, and these electrodes are multiplex-driven to perform dot display. In many cases, a simple matrix display section and a segment display section having segment electrodes and driven statically are used, and the display section 17 of the liquid crystal device of this embodiment is used.
However, it is also possible to form an active matrix display section having a matrix-shaped pixel electrode and a switching thin-film transistor or a two-terminal non-linear element such as MIM for each pixel on a glass substrate. It is possible. In a liquid crystal panel having a passive type or a two-terminal type non-linear element such as a simple matrix display, an IC is mounted on both glass substrates and a drive voltage is applied to the electrodes, so that the embodiment of FIG. 3 is suitable. In addition, the light-shielding frame 30 in FIGS. 1 to 3 may be configured by a case body of an electronic device, or may be provided inside the case.

FIG. 4 is a sectional view of an embodiment of an IC chip 20 for mounting a liquid crystal device to which the present invention is applied. In FIG. 4, reference numeral 20 ′ denotes a semiconductor substrate such as single crystal silicon,
On the surface of the semiconductor substrate 20 ', a circuit is formed which includes active elements such as MOSFETs or bipolar transistors and passive elements (not shown) such as resistors and capacitors. 21 is a field insulating film formed on the substrate surface, 2
2 is a wiring layer made of aluminum or the like for connecting the elements,
23, a passivation film as a protective film formed so as to cover the circuit element and the wiring layer 22;
Is a pad made of Al which is connected to the wiring layer 23 and is used for electrical connection to another device and power supply. A bump 14 made of gold or the like is formed on the surface of the pad 24. 25a and 25b are diffusion layers serving as source / drain regions of the MOSFET, and 25c is a gate electrode.

In this embodiment, a light-shielding film 26B made of the same conductive layer as the underlying conductive layer 26A formed between the pad 24 and the bump 14 is formed on the passivation film 23 covering the circuit portion. Have been. Light shielding film 2
6B covers almost the entire surface of the circuit portion formed in the IC chip, and preferably covers a wider region outside the region of the circuit portion in order to shield light obliquely incident on the circuit element. It is formed.

The light-shielding film 26B of this embodiment comprises a protective layer 2 made of a metal having high corrosion resistance and low resistance, such as gold or platinum, on a metal layer 26a made of a high melting point metal such as Ti.
6b is formed as a two-layer structure. In order to prevent light from entering the circuit portion, the lower metal layer 26a and the lower metal layer 26b only need to have a thickness of 500 angstroms or more. Lower metal layer 26a and upper metal layer 2
Although there is no particular upper limit on the thickness of 6b, considering the function as an underlayer of the bump, a thickness of 2000 to 3000 Å is sufficient. The lower metal layer functions as an adhesion layer for adhering the bump to the Al pad, and the upper metal layer functions as a protective layer for protecting the surface of the adhesion layer from a subsequent process.

Further, by using an alloy such as TiW for the lower metal layer, not only the function as the adhesion layer but also the Al
May also function as a barrier layer for preventing the diffusion of the Au to the bump side and the diffusion of the Au to the pad side (since the diffusion of each other reduces the adhesion strength of the bump). When such an alloy is used as the lower metal layer, there is an effect that one layer has a function of adhesion and a barrier, and the number of manufacturing steps does not increase. The alloy used for the lower metal layer is selected from metals having good adhesion and metals having good barrier properties, which will be described later.

The light-shielding layer 26B has a two-layer structure, and as a lower metal layer, an N-layer is formed on an adhesion layer made of a metal having good adhesion to a pad metal such as Ti, Ta, Ni, Cr, or Al.
A barrier layer made of a metal having a barrier function such as i, Pt, Pd, Rh, Cu, W, or Mo is formed, and an upper metal layer having a function of protecting the surface of an adhesion layer made of gold or platinum is formed thereon. It may have a three-layer structure in which a protective layer made of metal is formed, or may have a multilayer structure. In any case, it is sufficient that the underlayer composed of the lower metal layer and the upper metal layer has a thickness of about 500 to 3000 Å.

The light shielding layer 26B may be in a floating state in which no voltage is applied by being separated from the plurality of pads 24 provided on the peripheral portion of the semiconductor substrate 20 'as shown in FIG. 5A. , As shown in FIG.
For example, it may be formed so as to be connected to the pad 24 (GND) to which a constant potential such as the ground potential (0 V) is applied. Thereby, it is possible to prevent the light shielding film 26B from being charged and the passivation film from being electrostatically damaged.

Next, an example of a manufacturing process of the IC chip of the above embodiment will be described with reference to FIGS. The steps from the formation of elements, wiring, and pads constituting a circuit on a semiconductor substrate to the covering with a passivation film are the same as those of a conventional semiconductor integrated circuit. Will be described.

FIG. 6A shows a state in which a passivation film 23 is formed and an opening 23 a is opened in the passivation film 23 corresponding to the pad 24. At this time, in the circuit section, the upper part of the element and the wiring 22 is completely covered with the passivation film 23. The pad 24 is formed of the same aluminum layer as the wiring 22 on the field insulating film 21 on the substrate surface, and is connected to wirings (not shown) connected to predetermined elements of the internal circuit. In this state, an adhesion layer (also serving as a barrier layer) 26a made of TiW and a protective layer 26b made of Au are formed on the passivation film 23 by sputtering on the respective layers 500 to 200.
Laminate to a thickness of 0 Å (FIG. 6 (2)
reference).

Next, a relatively thick photoresist film 28 is applied on the close contact / barrier layer 26a and the protective layer 26b, and the lithography process is performed so as to correspond to the pad portion and the electrode contact portion for plating (not shown). An opening 28a is formed in the photoresist film 28 at the location (FIG. 6 (3)). The electrode contact portion for plating is provided at several places using a blank area such as a peripheral portion of a wafer instead of each chip.

Subsequently, a plating electrode needle is brought into contact with the plating electrode contact portion, and a plating process of gold or the like is performed by an electrolytic plating method or the like. Then, the bump 14 made of gold or the like is attached only in the pad opening 28a.
(4)). Next, the photoresist film 28 is removed (FIG. 6 (5)). FIGS. 6 (3) and (4) show a straight wall type bump process using a relatively thick photoresist, but a mushroom type bump can be formed by thinning the photoresist. Next, a photoresist film is applied again and exposed, so that the photoresist film 29 is left only above the circuit portion (FIG. 7 (6)). Thereafter, wet etching is performed using the photoresist film 28 as an etching mask. Then, the Au protective layer 26b remains only on the lower surface of the gold bump 14 and above the circuit portion.
(7)).

Thereafter, the photoresist film 29 is removed, and wet etching is performed using the Au protective layer 26b as an etching mask (FIG. 7 (8)). Then, the underlying conductive layer 26A of TiW / Au is formed on the lower surface of the gold bump 14.
However, the TiW /
The Au light shielding film 26B remains (FIG. 7 (9)).

According to the above-described process, the light-shielding film 26B covering the circuit portion can be formed by using the conventional process of forming the underlying conductive layer of the bump portion without adding any new process. Further, the upper Au may be etched again to form the light shielding film 26a of only TiW. When a ground potential is applied to the light shielding film 26B as shown in FIG. 5B, TiW / Au is continuously formed between the conductive layer 26A on the power supply pad 24 at the ground potential and the light shielding film 26B. It is preferable to perform patterning in the steps of FIGS. The potential applied to the light shielding film 26B may be another power supply potential, and the light shielding film may be connected to the constant potential supply pad.

The kind of metal constituting the underlying conductive layer described in the embodiment of FIGS. 6 and 7 is not limited to that of the above embodiment, and the metal constituting the adhesion layer may be Ti, Ta, NiCr. , Cr, Al, and Ni, Pt, Pd, R
A proper metal may be selected from h, Cu, W, and Mo, and a suitable metal from Au and Pt as the metal constituting the protective layer. Of the above-mentioned metals, all of the listed adhesion layers have good adhesion to the pad metal, and among them, Ti and Ta have very good corrosion resistance, and NiCr also has good corrosion resistance. If desired, it is better to use Ti, Ta or NiCr. Among the above-mentioned metals, among the barrier layers listed above, Ni is the most excellent in barrier properties for preventing diffusion of bump metals and bad metals and has good corrosion resistance, and Pt, Pd and Rh are particularly good in barrier properties and particularly excellent in corrosion resistance. Has good barrier properties and good corrosion resistance. Therefore, it is preferable to use Ni when the barrier properties are particularly important, and to use Pt, Pd or Rh when it is desired to have the barrier properties and corrosion resistance. W has a somewhat good barrier property but excellent corrosion resistance. The adhesion layer and the barrier layer may have a separate two-layer structure, but a plurality of metals selected from the above-mentioned metals having good adhesion and barrier properties are formed as an alloy layer, and the adhesion layer and the barrier layer are also used. You may.

FIG. 8 is an external view showing an example of a portable electronic device using the liquid crystal device of the present invention.

FIG. 8A is a perspective view showing a mobile phone. 1000 denotes a mobile phone body, of which 100
Reference numeral 1 denotes a liquid crystal display using the liquid crystal device of the present invention.

FIG. 8B is a diagram showing a wristwatch-type electronic device. 1100 is a perspective view showing the watch main body. 11
Reference numeral 01 denotes a liquid crystal display unit using the liquid crystal device of the present invention. Since this liquid crystal panel has higher definition pixels than a conventional clock display unit, it can also display television images, and can realize a wristwatch type television.

FIG. 8C shows a portable information processing apparatus such as a word processor or a personal computer. 1200 denotes an information processing apparatus, 1202 denotes an input unit such as a keyboard, 120
Reference numeral 6 denotes a display unit using the liquid crystal device of the present invention, and 1204 denotes an information processing apparatus main body. Since it is expected that these electronic devices are frequently used in sunlight, it is important to take measures against leakage in ICs.

Since each electronic device is a battery-driven electronic device, the battery life can be extended by reducing the light leakage current of the IC. In addition, malfunctions due to light leakage current can be prevented, thereby reducing operations such as resetting and power-on.

In addition to the above electronic devices,
The liquid crystal display device of the present invention can also be used as a light valve of a projection display device having a powerful light source. When used for a light valve, the structure is such that light enters from above in FIGS.

[0041]

As described above, according to the present invention, an element constituting a circuit is formed on the surface of a semiconductor substrate, and a pad for supplying input / output and power supply voltage of the circuit is provided around the semiconductor substrate. In a semiconductor integrated circuit device in which a bump is formed on a surface of a semiconductor substrate via a conductive layer serving as a base, a light-shielding film is formed on the surface of a passivation film of a semiconductor substrate on which the circuit is formed by using the same material as the base conductive layer. In the liquid crystal display device provided with the semiconductor integrated circuit device, light entering through the opening of the light shielding frame (partition frame) is blocked by the light shielding film so as not to reach the surface of the semiconductor substrate. In addition to preventing the operating current from increasing and the circuit from malfunctioning, the number of process steps is reduced because the conductive layer used as the underlayer of the bumps constitutes the light-shielding film in the circuit part. There is an effect that it is possible to perform shading of no IC chip increasing the width.

A light-shielding tape is attached to a surface of the semiconductor substrate opposite to the surface on which the pads are formed, and
In the state where the chip is mounted on the surface of the substrate other than the display portion of the liquid crystal device, the periphery of the IC chip is shielded from light by the light shielding means, so that the light shielding property is further improved.

[Brief description of the drawings]

FIG. 1 is a sectional view showing one embodiment of a liquid crystal device suitable for applying the present invention.

FIG. 2 is a sectional view showing another embodiment of a liquid crystal device suitable for applying the present invention.

FIG. 3 is a sectional view showing still another embodiment of a liquid crystal device suitable for applying the present invention.

FIG. 4 is a sectional view showing the structure of an embodiment of an IC chip suitable for being mounted on the liquid crystal device of the embodiment.

FIG. 5 is a plan view showing an example of a pattern of a light shielding film in the IC chip of the embodiment.

FIG. 6 is a sectional view showing a manufacturing process (first half) of the IC chip according to the embodiment in the order of steps;

FIG. 7 is a cross-sectional view showing a manufacturing process (second half) of the IC chip according to the embodiment in the order of steps;

FIGS. 8A, 8B and 8C are external views showing examples of electronic equipment using the liquid crystal device of the present invention.

[Explanation of symbols]

 11, 12 Glass substrate 13 Wiring 14 Bump 15 Sealing material 16 Liquid crystal 17 Display section 18 IC mounting section 19 Mold 20 IC chip 20 'Semiconductor substrate 21 Insulating film 22 Wiring layer 23 Passivation film 24 Pad 25a, 25b Diffusion layer (Source / Drain) Area) 26a Adhesion layer and barrier layer 26b Protective layer 26A Underlying conductive layer 26B Light shielding film 28, 29 Resist film 30 Light shielding frame 31 Opening 40 Light shielding tape 41, 42 Polarizing plate

 ────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Koichi Miyagawa 3-5-5 Yamato, Suwa-shi, Nagano Seiko Epson Corporation

Claims (12)

[Claims] 2. A semiconductor integrated circuit device comprising: a semiconductor substrate on which elements constituting a circuit are formed; and a pad for supplying input / output of the circuit and a power supply voltage, wherein a light-shielding film is provided on a passivation film of the semiconductor substrate. Wherein the semiconductor integrated circuit device is formed. 2. A semiconductor integrated circuit device in which a bump is formed on a pad via a conductive layer serving as a base, wherein the light-shielding film is formed of the same material as the conductive layer serving as a base. The semiconductor integrated circuit device according to claim 1, wherein: 3. The conductive layer and the light-shielding film serving as the underlayer are:
2. A multi-layer structure in which a protective layer made of gold or platinum is formed on a metal layer.
Or the semiconductor integrated circuit device according to 2. 4. The semiconductor integrated circuit device according to claim 1, wherein a light-shielding tape is attached to a surface of said semiconductor substrate opposite to said pad formation surface. 5. The semiconductor integrated circuit device according to claim 1, wherein the light-shielding film is connected to one of the pads and is applied with a constant potential. 6. A semiconductor integrated circuit device according to claim 1, wherein the semiconductor integrated circuit is a semiconductor integrated circuit for driving a liquid crystal display. 7. A pair of substrates having electrodes on the inner surface thereof are opposed to each other at a predetermined interval, and a liquid crystal display section in which liquid crystal is sealed between the pair of substrates is provided. At least one of the substrates has a semiconductor. An integrated circuit mounting part is provided,
3. A wiring extending from the liquid crystal display section on a substrate surface of a mounting portion of the semiconductor integrated circuit, and a terminal portion of the wiring is provided on a terminal portion of the wiring.
7. A liquid crystal device, wherein the semiconductor integrated circuit device according to any one of 6 to 6 is connected via the bump. 8. The liquid crystal device according to claim 7, wherein the periphery of said semiconductor integrated circuit device is molded with an opaque resin. 9. The liquid crystal device according to claim 7, wherein a light-shielding film is formed or affixed to at least a surface of the substrate around a mounting portion of the semiconductor integrated circuit. 10. An electronic apparatus comprising the liquid crystal device according to claim 7. 11. A semiconductor substrate, on which elements constituting a circuit are formed, and having a pad for electrically connecting the circuit and supplying a power supply voltage, and a bump formed on the pad via a conductive layer serving as a base. Is formed, and a light-shielding film is formed on a passivation film that covers above the circuit element. A method of manufacturing a semiconductor integrated circuit device, comprising: forming the passivation film, corresponding to the pad position with respect to the passivation film. Forming an opening on the passivation film, forming a conductive layer serving as a base of the bump on the passivation film, forming a resist film on the conductive layer serving as the base, and forming the pad on the resist film. Forming an opening corresponding to the position; and selectively forming an electrode to be a bump on the pad using the resist film as a mask. Forming a light-shielding film covering the upper part of the circuit portion with the same material as the base conductive layer by removing the conductive layer serving as the base by selective etching after removing the resist film. Of manufacturing a semiconductor integrated circuit device. 12. A method of manufacturing a semiconductor integrated circuit device according to claim 11, wherein the semiconductor integrated circuit device is an integrated circuit device for driving a liquid crystal display.