JPH10214786A5 - - Google Patents

Info

Publication number
JPH10214786A5
JPH10214786A5 JP1997029551A JP2955197A JPH10214786A5 JP H10214786 A5 JPH10214786 A5 JP H10214786A5 JP 1997029551 A JP1997029551 A JP 1997029551A JP 2955197 A JP2955197 A JP 2955197A JP H10214786 A5 JPH10214786 A5 JP H10214786A5
Authority
JP
Japan
Prior art keywords
insulating film
interlayer insulating
electrode
film
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997029551A
Other languages
English (en)
Japanese (ja)
Other versions
JP4190600B2 (ja
JPH10214786A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP02955197A priority Critical patent/JP4190600B2/ja
Priority claimed from JP02955197A external-priority patent/JP4190600B2/ja
Priority to US09/014,639 priority patent/US6355509B1/en
Priority to KR1019980003635A priority patent/KR19980071187A/ko
Publication of JPH10214786A publication Critical patent/JPH10214786A/ja
Publication of JPH10214786A5 publication Critical patent/JPH10214786A5/ja
Application granted granted Critical
Publication of JP4190600B2 publication Critical patent/JP4190600B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP02955197A 1997-01-28 1997-01-28 半導体装置の作製方法 Expired - Fee Related JP4190600B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP02955197A JP4190600B2 (ja) 1997-01-28 1997-01-28 半導体装置の作製方法
US09/014,639 US6355509B1 (en) 1997-01-28 1998-01-28 Removing a crystallization catalyst from a semiconductor film during semiconductor device fabrication
KR1019980003635A KR19980071187A (ko) 1997-01-28 1998-01-31 액체운송 장치 및 액체운송 펌프의 제어방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP02955197A JP4190600B2 (ja) 1997-01-28 1997-01-28 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH10214786A JPH10214786A (ja) 1998-08-11
JPH10214786A5 true JPH10214786A5 (cg-RX-API-DMAC7.html) 2005-10-06
JP4190600B2 JP4190600B2 (ja) 2008-12-03

Family

ID=12279287

Family Applications (1)

Application Number Title Priority Date Filing Date
JP02955197A Expired - Fee Related JP4190600B2 (ja) 1997-01-28 1997-01-28 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4190600B2 (cg-RX-API-DMAC7.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003163221A (ja) 2001-11-28 2003-06-06 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP4387091B2 (ja) 2002-11-05 2009-12-16 株式会社半導体エネルギー研究所 薄膜トランジスタの作製方法
US7460206B2 (en) 2003-12-19 2008-12-02 Carl Zeiss Smt Ag Projection objective for immersion lithography

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