JPH10204635A - Ion beam generating device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an ion beam generating device capable of generating plasma for executing ion plating and generating an ion beam for executing ion implantation from one arc discharge. SOLUTION: In an ion beam generating device 10 provided with a metal evaporating source 7, by generating arc between an anode and a cathode, evaporating and plasmatizing a constituting metal of the cathode and an inducing electrode part 8 provided with an accelerating electrode 16 and an earth electrode for inducing metal ionization from plasma, a moving device 17 moving the accelerating electrode to a position distance from the passage of the plasma and a switch 21 switching the earth electrode from an earthed state to an nonearthed state are provided.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an ion beam generator which can be used for both ion implantation and ion plating.

[0002]

2. Description of the Related Art Conventionally, a dynamic mixing apparatus as shown in FIG. 3 has been known as an apparatus capable of performing both ion implantation and ion plating. This dynamic mixing device generates an arc discharge between an anode and a cathode, thereby evaporating and converting the constituent metal of the cathode into a plasma, and an ion source of the constituent metal of the cathode by the arc discharge. Is provided in a vacuum vessel with an arc discharge type ion beam generator (for ion implantation) for extracting the ion beam as an ion beam.

[0003] This dynamic mixing device
(1) After forming a film by ion plating, ion implantation is performed to modify the surface layer of the film, and (2) after ion implantation is performed as a pretreatment, a film is formed by ion plating. (3) Further, ion plating is performed. A film can be formed by dynamic mixing in which ion implantation is performed simultaneously.

[0004] The configuration of this dynamic mixing device will be described. In FIG. 3, reference numeral 26 denotes a vacuum vessel.
8. The turntable 28 is connected to a bias power supply 29, and a bias voltage is applied to the object to be coated 27 via the turntable 28 so that the object 27 is set to a negative potential. In the figure, 3
An exhaust port 2 exhausts the inside of the vacuum vessel 26. An arc discharge type metal evaporation source 31 is mounted on the upper right side of the vacuum vessel 26, and an arc discharge type ion beam generator 30 is mounted on the upper left side.

[0005] The metal discharge source 31 of the arc discharge type has a target 36 made of a metal as a coating material as a cathode connected to a cathode of an arc power supply 35, and an anode 37 connected to an anode of the arc power supply 35. In this metal evaporation source 31, an ignition device (not shown) is connected to a cathode 36.
When an arc discharge is caused by contact with the cathode, the cathode 36 is locally vaporized at an arc spot, and most of the metal vapor is turned into plasma by collision with thermoelectrons generated by the arc discharge. Positive ions (mainly metal ions) in the plasma are guided to the coating target 27 which is set to a negative potential by applying a bias voltage to form a film.

In the ion beam generator 30, a cathode 42 for a metal ion source connected to a cathode of an arc power supply 41 and a trigger electrode (anode) 43 for ignition are provided at a side end of an arc chamber 40. And the arc chamber 4
An extraction electrode section 44 is formed on the side opposite to the cathode 42 of the zero. The ion beam generator 30 is mounted such that the extraction electrode unit 44 is on the vacuum vessel 26 side. Ion beam generator 3 having such a configuration
At 0, when the cathode 42 is ignited by the trigger electrode 43 to cause an arc discharge, the metal constituting the cathode evaporates and turns into plasma from the arc spot, and only metal ions are extracted from the plasma and accelerated by the electrode portion 44. It is launched as a high energy ion beam.

A description will be given of (1) the case of modifying the surface layer of a film by ion implantation after forming the film by ion plating. The metal ions directly evaporated from the solid metal of the cathode 36 of the metal evaporation source 31 reach the object to be coated 27 below the vacuum vessel 26 and form a film on the surface of the object to be coated 27. Thereafter, the operation of the metal evaporation source 31 is stopped, the ion beam generator 30 is operated, and a predetermined metal ion beam is applied to the coating on the object to be coated 27 to perform ion implantation.

Next, the case of (2) forming a film by ion plating after performing ion implantation as pretreatment will be described. The metal ion beam generator 30 is operated first, and the metal ion beam is
To perform a pretreatment of the surface of the article to be coated 27. Thereafter, a film is formed on the surface of the object to be coated 27 by the metal ions generated by the metal evaporation source 31.

In the dynamic mixing (3) in which ion plating and ion implantation are performed simultaneously, both the metal ion beam generator 30 and the metal evaporation source 31 are operated at the same time, and the coating object 27 below the vacuum vessel 26 is operated. The surface is modified.

[0010]

However, the conventional dynamic mixing apparatus uses the same operation and principle of arc discharge in a metal evaporation source and an ion beam generator, but generates arc discharge in separate apparatuses. However, there is a problem that the apparatus becomes complicated and the cost of the apparatus increases. In particular, ion plating and ion implantation, such as (1) reforming of the surface layer of the film by ion implantation after the formation of the film by ion plating and (2) formation of the film by ion plating after the ion implantation as a pretreatment, are performed. In the case of a process in which the process is carried out continuously, an arc discharge type metal evaporation source and an arc discharge type ion beam generator are not used at the same time, so that an extra discharge device is required and the cost of the device is increased.

The present invention has been made in view of such circumstances, and an object of the present invention is to generate plasma for performing ion plating and perform ion implantation from one arc discharge. The present invention provides an ion beam generator capable of generating both ion beams.

[0012]

In order to achieve the above-mentioned object, the invention according to claim 1 of the present invention is characterized in that an arc is generated between an anode and a cathode.
A metal evaporation source for evaporating a constituent metal of the cathode to form a plasma; and an extraction electrode unit including an extraction electrode provided with an acceleration electrode and a ground electrode for extracting only metal ions from the plasma. And a switch that switches the ground electrode between ground and non-ground.

[0013] By providing a moving device for moving the accelerating electrode to a position away from the ionized metal flow path and a switch for switching the ground electrode from ground to non-ground, one arc discharge source can be used. A metal ion beam of the metal constituting the cathode can be generated, and the metal plasma can be extracted as it is and ion plating can be performed. As a result, a process in which ion plating and ion implantation are performed continuously can be performed by one source, and the apparatus can be simplified and the cost can be reduced.

According to a second aspect of the present invention, in the configuration of the first aspect, the generated plasma is guided between the ion outlet of the ion beam generator and the metal evaporation source toward the object to be coated. And a magnetic field applying device for the purpose. The purpose of the present invention is to increase the transport efficiency of ionized metal and to increase the film forming rate during ion plating.

[0015]

DESCRIPTION OF THE PREFERRED EMBODIMENTS Embodiments of the present invention will be described with reference to illustrated examples. FIG. 1 is a diagram showing a configuration of an ion beam generator according to an embodiment of the present invention and an assembled state of the ion beam generator and a vacuum vessel for ion plating or / and ion implantation. FIG.
It is a figure showing composition of an ion beam generator which is another embodiment of the present invention. First, an embodiment of the present invention will be described. In FIG. 1, an ion beam generator 10 capable of performing ion plating according to the present invention is assembled on the upper left side of a vacuum vessel 1 for ion plating and / or ion implantation. The ion beam generator 10 includes a cathode 11, a trigger electrode (anode) 12, and an arc power source 14 for generating metal plasma by arc discharge.
And an extraction electrode section 8 for generating an ion beam, an acceleration power supply 15, and the like. Extraction electrode part 8
Is a two-piece system including an acceleration electrode 16 and a ground electrode 18 and has a porous or slit-shaped outlet. As a feature of the ion beam generator, the accelerating electrode 16 is an accelerating electrode driving device 17 for linearly reciprocating or swinging the accelerating electrode 16 (in the embodiment of the present invention, the accelerating electrode driving device is linearly reciprocating. The device is shown.) Further, the ground electrode 18 is insulated from the vacuum vessel 1 by an insulating material 20, and has a structure in which a changeover switch 21 can select a ground potential and a floating potential. An object to be coated 3 is placed on the turntable 2 below the vacuum vessel 1. The turntable 2 is connected to a bias power supply 6, and a bias voltage is applied to the object to be coated 3 via the turntable 2 so as to be at a negative potential. In the figure, reference numeral 4 denotes an exhaust port for exhausting the inside of the vacuum vessel 1, and reference numeral 5 denotes a supply port for supplying a reaction gas (oxygen gas, nitrogen gas, hydrocarbon-based gas, etc.) into the vacuum vessel 1.

The operation of the ion beam generator 10 of the present invention will be described. When the present apparatus is used for generating an ion beam for ion implantation (A), the accelerating electrode 16 is
It is arranged at a position facing the ground electrode 18. The earth electrode 18 is at the earth potential, and then a predetermined acceleration voltage (10 to 100 kV) is applied to the acceleration electrode 16 and the arc chamber 13 by the acceleration power supply 15. At the same time, a trigger electrode (anode) is activated by the arc power supply 14.
An arc is ignited between the cathode 12 and the cathode 11, an arc discharge is generated, and the metal constituting the cathode is evaporated and turned into plasma. When the plasma reaches the accelerating electrode 16, only the metal ions are accelerated by the accelerating voltage between the accelerating electrode 16 and the earth electrode 18, and are incident on the vacuum vessel 1 as a metal ion beam.

When the present apparatus is used as an ion plating apparatus (B), the accelerating electrode 16 is moved into the accelerating electrode driving apparatus 17 by the accelerating electrode driving apparatus 17 so that the distance between the cathode 11 and the arc electrode 18 is increased. It is arranged at a position off the plasma flow path. Further, the ground electrode 18
Is switched by the changeover switch 21 to a floating potential that is not grounded. At this time, no acceleration voltage is applied to the acceleration electrode 16 (the acceleration power supply 15 is not operated).
To Next, when the cathode 11 is ignited by the trigger electrode (anode) 12 to generate an arc discharge, the metal constituting the cathode evaporates and enters a plasma state. This plasma is diffused toward the vacuum vessel 1 through the opening of the arc electrode 18. At this time, since the arc electrode 18 is switched to the floating potential, loss of the plasma of metal ions when the plasma passes through the ground electrode 18 can be suppressed.

As described above, by using the ion beam generator of the present invention, it is possible to continuously perform ion plating after ion implantation or ions after ion plating. For example, when ion plating is performed after ion implantation, the acceleration electrode is arranged at a position facing the ground electrode, and the ground electrode is set to the ground potential. (A) is performed. Next, in the ion plating (B), the accelerating electrode is moved into the accelerating electrode driving device, the earth electrode is switched to the floating potential, and arc discharge is performed. When ion implantation is performed after ion plating, the reverse operation is performed. Note that ion implantation or ion plating may be performed independently using the ion beam generator of the present invention.

Further, a compound film can be formed by ion plating using the ion beam generator of the present invention. The gas supply unit 5 is connected to a gas cylinder (not shown) outside the vacuum vessel 1 and a flow controller for adjusting a gas supply amount, and supplies a reaction gas (oxygen gas, nitrogen gas, hydrocarbon gas, etc.) to the gas supply unit. Is supplied. Ions made of a metal (for example, Ti) constituting the cathode react with a reaction gas (for example, nitrogen gas) supplied from a gas supply unit near the object to be coated, and a compound thin film (in this case, TiN) is formed on the surface of the object to be coated. Can be formed. At this time, by changing the kind of the metal and the reaction gas constituting the cathode, a thin film of oxides, nitrides, carbides and composites of these compounds can be formed. The gas pressure at this time depends on the operating conditions and the composition ratio of the compound, but is about 10 ^-5 to 10 ^-4.
It is usually performed at about Pa.

Further, the surface roughness of the film of the object to be coated when ion plating is performed using the ion beam generator of the present invention is better than that of a conventional arc discharge type ion plating apparatus. Surface roughness was obtained. In a conventional ion plating apparatus, there is a case where molten particles of a cathode metal generated at the time of arc discharge fly to an object to be coated and mix into the film to deteriorate the surface roughness of the film. However, in the ion beam generator of the present invention, the earth electrode has the effect of suppressing the passage of electrically neutral molten particles, and reduces the reach of the metal molten particles generated during arc discharge to the object to be coated, An improvement in the film surface roughness could be achieved.

Next, another embodiment of the present invention will be described with reference to FIG. FIG. 2 shows an ion beam generator 1 according to the present invention.
At 0, a magnetic field applying device 22 for moving a plasma of ionized metal ions is provided. Two magnet coils (magnetic field applying devices) 22 are disposed between the ion outlet 9 of the ion beam generator 10 and the metal evaporation source 7 on both sides of the outer peripheral portion with the extraction electrode portion 8 therebetween. To form a magnetic field along the flow path. This magnetic field is applied so that the two magnet coils 22 are excited in the same direction so as to have magnetic lines of force 23 as shown in FIG. As a result, the plasma containing the metal ions generated from the cathode is easily transported to the vacuum vessel 1 side by the effect of inducing the magnetic field of the magnet coil, and the film forming speed by the ion plating can be improved. The film formation efficiency was improved. The strength of the magnetic field is such that the magnetic field component along the central axis on the cathode surface is 20 G
If it is at least about, the plasma of metal ions can be induced. When metal ions flow in the form of a beam, a magnetic field is generated by itself.
This is because if it exceeds G, the level becomes negligible. Further, the number of magnet coils for exciting the magnetic field may be three or more as necessary.

The ion beam generator of the present invention is not limited by the present embodiment, and may be used alone as an ion plating device or an ion implantation device.

[0023]

As described above, the invention of claim 1 of the present invention uses one arc discharge source,
In addition to generating a metal ion beam of the constituent metal of the cathode, it is also possible to extract the metal ion as it is in the plasma, making it possible to simplify the apparatus and reduce costs in the process of continuous ion plating and ion implantation. Is what you do. The apparatus of the present invention can perform ion implantation and ion plating with one apparatus, and can form not only a metal film but also a ceramic film. Further, when the apparatus of the present invention is used as an ion plating apparatus, the earth electrode suppresses the passage of electrically neutral molten particles, and prevents the metal molten particles generated at the time of arc discharge from reaching the object to be coated. By reducing the thickness, the surface roughness of the coating can be improved.

According to a second aspect of the present invention, in addition to the effect of the first aspect of the present invention, a film forming speed by ion plating is improved by disposing a magnetic field applying device for moving ionized metal. Is made possible. As a result, it is possible to increase the film forming efficiency as an ion plating apparatus.

[Brief description of the drawings]

FIG. 1 is a diagram showing a configuration of an ion beam generator according to an embodiment of the present invention and an assembled state of the ion beam generator and a vacuum vessel for ion plating or / and ion implantation.

FIG. 2 is a diagram showing a configuration of an ion beam generator according to another embodiment of the present invention.

FIG. 3 is a diagram showing an outline of a conventional dynamic mixing device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Vacuum container 2 Turntable 3 Coating object 4 Exhaust port 5 Gas supply port 6 Bias power supply 7 Metal evaporation source 8 Extraction electrode part 9 Ion outlet 10 Ion beam generator 11 Cathode 12 Trigger electrode (anode) 13 Arc chamber 14 Arc Power supply 15 Acceleration power supply 16 Acceleration electrode 17 Acceleration electrode driving device 18 Arc electrode 19 Insulating material 20 Insulating material 21 Changeover switch 22 Magnet coil (magnetic field applying device) 23 Magnetic field lines

Claims (2)

[Claims] An arc is generated between an anode and a cathode to evaporate a constituent metal of the cathode and convert the metal to a plasma, and an acceleration electrode and an earth electrode for extracting metal ions from the plasma. An ion beam generator comprising: an extraction electrode unit provided; a moving device that moves the acceleration electrode to a position away from the plasma flow path; and a switch that switches the ground electrode between ground and non-ground. An ion beam generator, comprising: 2. The ion beam generator according to claim 1, further comprising a magnetic field applying device for inducing plasma between the ion outlet of the ion beam generator and the metal evaporation source.