CN215404480U - Ion source auxiliary evaporation structure, vacuum cavity and vacuum coating machine - Google Patents
Ion source auxiliary evaporation structure, vacuum cavity and vacuum coating machine Download PDFInfo
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- CN215404480U CN215404480U CN202122234502.9U CN202122234502U CN215404480U CN 215404480 U CN215404480 U CN 215404480U CN 202122234502 U CN202122234502 U CN 202122234502U CN 215404480 U CN215404480 U CN 215404480U
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Abstract
The application relates to an evaporation structure, vacuum cavity and vacuum coating machine are assisted to ion source, and the evaporation structure is assisted to the ion source includes: the ion source installation positions and the electron gun installation positions are arranged at the bottom of the vacuum cavity; the electron gun mounting position is arranged at a set distance from the ion source mounting position; each electron gun mounting position is provided with a crucible structure for containing a coating material, and the electron gun mounting position is used for mounting an electron gun for evaporating the coating material; each ion source installation position is used for installing an ion source, the ion source is used for outputting an ion beam to bombard the surface of a plated workpiece, and the plated workpiece is plated by an auxiliary evaporated plating material; according to the technical scheme, the cost of ion source equipment is reduced, the coating quality and the coating efficiency are improved, and the coating uniformity and the compactness of a coated product are better.
Description
Technical Field
The application relates to the technical field of vacuum coating machines, in particular to an ion source auxiliary evaporation structure, a vacuum cavity and a vacuum coating machine.
Background
In some vacuum coating machines, a plurality of electron guns may be provided as evaporation sources, and the electron guns may evaporate a coating material to perform coating, and in coating, an ion source is often used to assist coating, so that a better coating effect may be achieved.
In a conventional vacuum coater, an ion source assisted evaporation structure is shown in fig. 1, and fig. 1 is a schematic view of the ion source assisted evaporation structure; as shown in the figure, an ion source 11 is usually arranged at the center of the connecting line of an electron gun 21 to assist coating, the design structure usually needs an ion source with larger size, so that the cost of the ion source is greatly increased, and the larger size of a vacuum coating machine table can not play a role in replacing the cover.
SUMMERY OF THE UTILITY MODEL
Accordingly, it is necessary to provide an ion source assisted evaporation structure, a vacuum chamber and a vacuum coater for improving the quality and efficiency of coating by using the ion source assisted evaporation structure.
An ion source assisted evaporation structure comprising: the ion source installation positions and the electron gun installation positions are arranged at the bottom of the vacuum cavity; the electron gun mounting position is arranged at a set distance from the ion source mounting position;
each electron gun mounting position is provided with a crucible structure for containing a coating material, and the electron gun mounting position is used for mounting an electron gun for evaporating the coating material; and each ion source mounting position is used for mounting an ion source, the ion source is used for outputting ion beams to bombard the surface of the workpiece to be plated, and the workpiece to be plated is plated with the auxiliary evaporated film-plating material.
In one embodiment, the electron gun mounting positions are arranged on two sides of the ion source mounting position, and the ion source mounting positions are arranged on a midline between the electron gun mounting positions; the electron gun mounting positions comprise a left electron gun mounting position and a right electron gun mounting position which are distributed on two sides of the ion source mounting position; wherein the crucible structure is used for containing different types of coating materials.
In one embodiment, the ion source mounting location is for mounting a first ion source and a second ion source;
wherein the first ion source and the second ion source are arranged on the center line of the left electron gun and the right electron gun.
In one embodiment, the first ion source is an rf ion source and the second ion source is an rf ion source;
or
The first ion source is a plasma source and the second ion source is a plasma source;
or
The first ion source is a radio frequency ion source and the second ion source is a plasma source.
In one embodiment, the rf ion source is configured to output a high energy ion beam that bombards a surface of a material to assist in forming a dense thin film from a thin film material film deposited in a vacuum environment.
In one embodiment, the plasma source is configured to output a high efficiency plasma that chemically reacts with a thin film material vaporized in a vacuum environment to form a chemically stable thin film.
In one embodiment, the ion source assisted evaporation structure further comprises: the ion source power supply module and the electron gun power supply module;
the ion source power supply module is respectively connected with each ion source and provides power supply for each ion source; and the electron gun power supply module is respectively connected with each electron gun and provides power for each electron gun.
In one embodiment, the ion source auxiliary evaporation structure further comprises a control module respectively connected with the ion source power supply module and the electron gun power supply module;
the control module controls the output power of the ion source power supply module, and the control module controls the output current of the electron gun power supply module.
A vacuum chamber, comprising: the ion source auxiliary evaporation structure is described above.
A vacuum coating machine comprises the vacuum cavity.
The technical scheme of this application has following beneficial effect:
the ion source auxiliary evaporation structure designs a plurality of ion source mounting positions for auxiliary coating, optimizes the layout structure of each ion source mounting position, reduces the equipment cost of the ion source, and simultaneously improves the coating quality and the coating efficiency, so that the coating uniformity and the compactness of a coated product are better.
Drawings
FIG. 1 is a schematic diagram of a conventional ion source-assisted evaporation structure;
FIG. 2 is a schematic plan view of an ion source assisted evaporation configuration according to an embodiment;
FIG. 3 is a schematic plan view of an ion source assisted evaporation configuration according to another embodiment;
FIG. 4 is a schematic plan view of an ion source assisted evaporation configuration according to another embodiment;
FIG. 5 is a schematic perspective view of an exemplary ion source assisted evaporation structure;
FIG. 6 is a schematic diagram of an ion source layout according to one embodiment;
FIG. 7 is a schematic view of an ion source layout according to another embodiment;
FIG. 8 is a schematic view of an ion source layout according to yet another embodiment;
fig. 9 is a block diagram of power supplies for the ion source and the electron gun.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is described in further detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
The term "comprises" and any other variations of the embodiments of the present application are intended to cover non-exclusive inclusions. For example, a process, method, system, article, or apparatus that comprises a list of steps is not limited to only those steps or modules recited, but may alternatively include other steps or modules not recited, or that are inherent to such process, method, article, or apparatus.
Referring to fig. 2, fig. 2 is a schematic plan view of an ion source assisted evaporation structure according to an embodiment, the ion source assisted evaporation structure includes: a plurality of ion source mounting positions 10 arranged at the bottom of the vacuum chamber 100, such as 1-m (m is more than or equal to 2) and a plurality of electron gun mounting positions 20, wherein the electron gun mounting positions 20 are arranged at the positions with set distance from the ion source mounting positions 10; 1-n (n is more than or equal to 2) in the figure; preferably, the electron gun mounting positions 20 are arranged and distributed on two sides of the ion source mounting position 10, and the ion source mounting position 10 is arranged on a midline (as a dotted line in the figure) between the electron gun mounting positions 20; each electron gun mounting position 20 is provided with a crucible structure 30 for containing coating materials, and the electron gun mounting position 20 is used for mounting an electron gun 21 for evaporating the coating materials; each ion source installation position 10 is used for installing an ion source 11, the ion source 11 is used for outputting ion beams to bombard the surface of a workpiece to be plated, and the workpiece to be plated is plated with a film-plating material in an auxiliary evaporation mode.
Specifically, as shown in the top view of fig. 2, the ion source mounting locations 10 may be distributed on the center line (dashed line in the figure) of the electron gun, and referring to fig. 3, fig. 3 is a schematic plan view of an auxiliary evaporation structure of an ion source according to another embodiment, as shown in the layout of fig. 3, two ion sources ( ion sources 1 and 2 in the figure) are correspondingly matched with four electron guns (electron guns 1-4 in the figure), wherein the electron guns 1 and 2 may be used with the ion source 1, and the electron guns 3 and 4 may be used with the ion source 2. Referring to fig. 4 again, fig. 4 is a schematic plan view of an auxiliary evaporation structure of an ion source according to another embodiment, in which, in the layout shown in fig. 4, two ion sources ( ion sources 1 and 2 in the figure) are correspondingly matched with two electron guns ( electron guns 1 and 2 in the figure), wherein the electron gun 1 is used with the ion source 1, and the electron gun 2 is used with the ion source 2.
Therefore, a plurality of ion source mounting positions 10 can be distributed at the positions, when ion sources are required to be added, corresponding ion sources 11 can be additionally arranged on the ion source mounting positions 10, the function of auxiliary coating of the plurality of ion sources can be realized, the layout structure of each ion source is optimized, the problem that the cost of ion source equipment is greatly increased due to the fact that the ion sources with larger sizes are required is avoided, and the coating quality and the coating efficiency can be improved through the compared plurality of ion sources, so that the film forming uniformity and the compactness of a coated product are better.
In order to make the technical solutions of the present application clearer, further embodiments are described below with reference to the accompanying drawings.
Referring to fig. 5, fig. 5 is a schematic perspective view of an exemplary ion source-assisted evaporation structure, in which the electron gun 21 may generally include a left electron gun 21a and a right electron gun 21b disposed at two sides of the ion source 11, and the crucible structure 30 is used for containing different types of coating materials; during coating, the electron gun 21 may evaporate the coating material contained in the crucible structure 30, and the ion source 11 may assist in coating.
With continued reference to fig. 5, preferably, the ion source 11 may include a first ion source 111 and a second ion source 112, as illustrated, the first ion source 111 and the second ion source 112 are disposed on a center line of the left electron gun 21a and the right electron gun 21 b. By the arrangement scheme, the ion source can improve the film coating assistance of replacement.
The present application provides various mounting methods for the design of the ion source, and can determine the best technical solution according to the requirements, which is explained in the following with reference to the drawings and the embodiments.
In one embodiment, referring to fig. 6, fig. 6 is a schematic layout of an ion source according to an embodiment, in which the first ion source 111 is an rf ion source S and the second ion source 112 is a plasma source D; in this embodiment, different characteristics of the rf ion source S and the plasma source D can be used in cooperation, so as to improve the quality of the coating film.
In another embodiment, referring to fig. 7, fig. 7 is a schematic view of an ion source layout according to another embodiment, as shown in the figure, the first ion source 111 and the second ion source 112 both use the rf ion source S; in the embodiment, the dual-radio-frequency ion source is used for auxiliary coating, so that the coverage area of the ion source can be increased, more energy can be provided, and the coating quality can be improved.
In yet another embodiment, referring to fig. 8, fig. 8 is a schematic view of an ion source layout according to yet another embodiment, as shown in the figure, the first ion source 111 and the second ion source 112 both employ a plasma source D; in the embodiment, the auxiliary coating is performed by using the double plasma sources, so that the coverage area of the ion sources can be increased, more energy can be provided, and the coating quality can be improved.
For the rf ion source in the above embodiment, the auxiliary film forming operation principle is as follows: the plasma is generated through radio frequency ionization, positive ions generate ion beams through a grid electric field in an accelerating mode, high-energy ion beams are neutralized with electrons and output high-energy ion beams, and the ion beams bombard the surface of a material to assist a thin film material film deposited in a vacuum environment to form a compact thin film.
For the plasma source of the above embodiment, the auxiliary film formation operation principle is as follows: the cathode emits hot electrons to move towards the anode, electrons collide with atoms and are ionized into plasma, electrons in a magnetic field form current to generate an electric field, the plasma is accelerated by the electric field to be led out, high-efficiency plasma is output and used for thin film chemical reaction, and high-efficiency chemical reaction is carried out on thin film materials evaporated in a vacuum environment, so that the chemical performance of deposited thin films is more stable, and chemical components are more perfect.
For the structural design of multiple ion sources and electron guns, the embodiment of the present application further provides a unified power supply control scheme, which is shown with reference to fig. 9, where fig. 9 is a power supply structure diagram of the ion sources and the electron guns; the ion source auxiliary evaporation structure of the present application further comprises an ion source power module 12 and an electron gun power module 22; the ion source power supply module 12 is respectively connected with each ion source 11 and provides power for each ion source 11; the electron gun power supply module 22 is connected to each electron gun 21, and supplies power to each electron gun 21.
Further, the ion source power supply module 12 and the electron gun power supply module 22 are also connected with the control module 40; wherein the control module 40 controls the output power of the ion source power module 12, and the control module 40 controls the output current of the electron gun power module 22.
Specifically, the control module 40 controls the power supply of each ion source 11, including turning on/off the power supply, and controlling the power of the power supply, thereby adjusting the output power of the ion source 11; similarly, the control module 40 can also control the on/off of the electron gun 21, and control the output current of the power module during the coating process to control the evaporation rate of the coating material, and the like.
Embodiments of the vacuum chamber of the present application are set forth below.
The vacuum chamber 100 of the present embodiment includes a plurality of ion source installation sites 10 and a plurality of electron gun installation sites 20; wherein the ion source mounting position 10 and the electron gun mounting position 20 are used for mounting the ion source auxiliary evaporation structure provided in any one of the embodiments.
Through the ion source auxiliary evaporation structure provided by the application, a plurality of ion source mounting positions for assisting in coating are designed, the layout structure of each ion source mounting position is optimized, the cost of ion source equipment is reduced, the coating quality and the coating efficiency are improved, and the film forming uniformity and the compactness of a coated product are better.
An embodiment of the vacuum coater of the present application is set forth below.
The application provides a vacuum coating machine, which adopts the vacuum cavity 100; the vacuum coating machine adopts the vacuum cavity provided by the embodiment of the application, and the vacuum cavity adopts the ion source auxiliary evaporation structure, so that the coating quality and the coating efficiency are improved, and the film forming uniformity and the compactness of a coated product are better.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. An ion source assisted evaporation structure, comprising: the ion source installation positions and the electron gun installation positions are arranged at the bottom of the vacuum cavity; the electron gun mounting position is arranged at a set distance from the ion source mounting position;
each electron gun mounting position is provided with a crucible structure for containing a coating material, and the electron gun mounting position is used for mounting an electron gun for evaporating the coating material; and each ion source mounting position is used for mounting an ion source, the ion source is used for outputting ion beams to bombard the surface of the workpiece to be plated, and the workpiece to be plated is plated with the auxiliary evaporated film-plating material.
2. The ion source-assisted evaporation structure of claim 1, wherein the electron gun mounting positions are arranged on two sides of the ion source mounting position, and the ion source mounting positions are arranged on a center line between the electron gun mounting positions; the electron gun mounting positions comprise a left electron gun mounting position and a right electron gun mounting position which are distributed on two sides of the ion source mounting position; wherein the crucible structure is used for containing different types of coating materials.
3. The ion source-assisted evaporation structure of claim 2, wherein the ion source mounting location is for mounting a first ion source and a second ion source;
wherein the first ion source and the second ion source are arranged on the center line of the left electron gun and the right electron gun.
4. The ion source-assisted evaporation structure of claim 3, wherein said first ion source is an rf ion source and said second ion source is an rf ion source;
or
The first ion source is a plasma source and the second ion source is a plasma source;
or
The first ion source is a radio frequency ion source and the second ion source is a plasma source.
5. The ion source-assisted evaporation structure of claim 4, wherein said RF ion source is configured to output a high energy ion beam to bombard the surface of the material with the ion beam to assist the formation of the dense thin film from the thin film material film layer deposited in the vacuum environment.
6. The ion source-assisted evaporation structure of claim 4, wherein the plasma source is configured to output a high efficiency plasma that chemically reacts with the thin film material evaporated in the vacuum environment to form a chemically stable thin film.
7. The ion source assisted evaporation structure of any of claims 1 to 6, further comprising: the ion source power supply module and the electron gun power supply module;
the ion source power supply module is respectively connected with each ion source and provides power supply for each ion source; and the electron gun power supply module is respectively connected with each electron gun and provides power for each electron gun.
8. The ion source-assisted evaporation structure of claim 7, further comprising a control module connected to the ion source power module and the electron gun power module, respectively;
the control module controls the output power of the ion source power supply module, and the control module controls the output current of the electron gun power supply module.
9. A vacuum chamber, comprising: the ion source assisted evaporation structure of any of claims 1 to 8.
10. A vacuum coater comprising the vacuum chamber of claim 9.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122234502.9U CN215404480U (en) | 2021-09-15 | 2021-09-15 | Ion source auxiliary evaporation structure, vacuum cavity and vacuum coating machine |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122234502.9U CN215404480U (en) | 2021-09-15 | 2021-09-15 | Ion source auxiliary evaporation structure, vacuum cavity and vacuum coating machine |
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| CN215404480U true CN215404480U (en) | 2022-01-04 |
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| CN202122234502.9U Active CN215404480U (en) | 2021-09-15 | 2021-09-15 | Ion source auxiliary evaporation structure, vacuum cavity and vacuum coating machine |
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