JPH10199917A - Bonding method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To bond virtually grouped semiconductor components by automatically updating the height of a bonding tool to move it to an optimum height position for bonding, even if the bonding faces of the components are different. SOLUTION: A tool 7 is moved to an origin height Z above a pad X1 and lowered to obtain the distance from a bonding face height of the pad X1 . The tool is moved to an origin height above a pad X2 and lowered to obtain the distance from a bonding face height of the pad X1 . The difference D between these obtd. distances is found and added to the bonding face height of the pad X2 in order to obtain the next bonding face height, thus automatically updating the tool height.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bonding method for performing bonding to a semiconductor component as a component mounted on a bonding stage, and more particularly to a method for virtually mounting a semiconductor component as a component to be bonded. The present invention relates to a bonding apparatus method capable of automatically updating the height of a bonding tool and performing bonding when bonding is performed by dividing a plurality of groups.

[0002]

2. Description of the Related Art In a wire bonding apparatus used in a semiconductor device assembling process, a pad (electrode) on a semiconductor chip serving as a first bonding point using a gold wire or a wire such as copper or aluminum is connected to a second bonding point. The connection is made with a lead which is a point.

Conventionally, in this type of wire bonding apparatus, prior to the above-described bonding, a high voltage is applied between a tip of a wire drawn out of a capillary as a bonding tool and a torch rod as a discharge electrode. Causes a discharge, and the thermal energy associated with the discharge melts the distal end of the wire to form a ball at the distal end of the capillary.

After the ball is formed in this manner, the wire is held by a capillary, and the ball is crushed to a pad on a semiconductor chip serving as a first bonding point to perform thermocompression bonding. At this time, the ultrasonic vibration is simultaneously applied to the tip of the wire.

Subsequently, the capillary is pressed against a lead on a target semiconductor chip while the wire is fed out from the tip of the capillary, and the wire is connected to a lead serving as a second bonding point. After connecting the wire to the second bonding point in this way, the wire is cut by the clamp in the process of raising the capillary to a predetermined height, and a series of bonding steps is completed.

However, in a conventional wire bonding apparatus, for example, as disclosed in Japanese Patent Application Laid-Open No. 2-39433, bonding is performed by changing the changing height of the capillary descent speed according to the bonding surface height. What you do is known.

In this apparatus, as shown in FIG. 11, data indicating the initial altitude h0 of the capillary with respect to a reference position is input in step a, and signals are sent to the drive motor in steps b and c, so that the drive motor is driven. Is rotated at high speed, and the capillary is lowered at high speed until the capillary reaches the initial altitude h0.

In step d, a signal is sent to the drive motor to rotate the drive motor at a low speed, and the capillary is lowered at a low speed to determine whether the tip of the capillary has contacted the bonding surface (step e).

When the tip of the capillary contacts the bonding surface, in step f, data indicating the altitude h1 at the position where the tip of the capillary contacts the bonding surface is stored in the memory (R).
AM). Then, a wire bonding operation is performed in step g.

By the above process, the bonding operation to the first bonding point is performed, and the same operation is similarly performed at the second bonding point.

[0011]

By the way, in the conventional wire bonding apparatus, as shown in FIG. 11, the bonding surface moves at a high speed from a reference position to an initial height h0, and then moves at a low speed. The data indicating the position h0 at which the capillary was lowered to contact with the memory was stored in the memory (R
AM), the height of the pad, which is the first bonding point, or the height position of the lead, which is the second bonding point, is measured one by one. Therefore, there is a problem that it is difficult to increase the speed.

When the semiconductor chip is inclined with respect to a substrate such as a lead frame as shown in FIG. 5, the height of the pad may change abruptly.
If the altitude h0 for switching from the high speed to the low speed is not set to a sufficient height as described above, there is a risk that the bonding tool collides with the pad earlier than when the lowering speed of the bonding tool is changed to a sufficiently low speed. Therefore, it is necessary to set the height sufficiently to avoid such a collision, but in this case, there is a problem that the speed cannot be increased.

When a semiconductor chip is virtually divided into a plurality of groups and bonded as shown in FIG. 10, bonding is performed in the direction of the arrow.
Since the height of the pads of the semiconductor chip is different between the case where bonding is performed in the direction indicated by the arrow and the case where bonding is performed in the direction indicated by the arrow, the possibility of collision is high, and therefore the height of the bonding tool must be sufficient. It must be raised to a position.

When performing such bonding,
The bonding tool is raised to a sufficiently high position so that the bonding tool does not collide with the bonding surface, and is switched from a high speed to a low speed to perform bonding.

The present invention has been made in view of such a conventional problem. When a semiconductor component as a component to be bonded is virtually divided into a plurality of groups and bonded, the semiconductor component is used. Even when the height of the bonding surface of the component is different, the height of the bonding tool is automatically updated, the tool is moved to the optimum height position, bonding is performed, and high-speed processing can be achieved. It is an object of the present invention to provide a bonding method.

[0016]

According to a first aspect of the present invention, there is provided a bonding method for performing bonding by positioning a lead frame and displacing a bonding tool with respect to the lead frame and the semiconductor chip. Then, the bonding tool is moved to a reference origin height above the pad, which is a first bonding point set in advance, and the bonding tool is lowered from the origin height so that the distance from the pad to the bonding surface height of the pad is reduced. A first step of obtaining and storing the obtained data in the storage means; and moving the bonding tool to an origin height above the pad adjacent to the pad and lowering the bonding tool from the origin height to the bonding surface height of the pad. A second step of obtaining a distance of the first and storing the distance in the storage means; A third step of obtaining a difference between the height of the origin and the distance to the bonding surface obtained in the step of; and a bonding surface height of the pad obtained in the second step of obtaining the difference obtained in the third step. And the fourth step of making the next bonding surface height by adding

According to a second aspect of the present invention, in the bonding method, the n-th bonding point Xn, which is a bonding point after the pad obtained in the fourth step, is used.
Xn = Xn _{-1 where} D is the difference in distance between pads.
+ D _n-2 .

A bonding method according to a third aspect of the present invention is a bonding method for positioning a lead frame and displacing a bonding tool with respect to the lead frame and the semiconductor chip to perform bonding. Is moved to a reference origin height Z above the pad X1, which is a preset first bonding point, and the bonding tool is lowered from the origin height Z to obtain a distance from the origin X to the bonding surface height of the pad X1. A first step of storing the bonding tool in the storage means and moving the bonding tool to an origin height Z above the pad X2 adjacent to the pad X1, lowering the bonding tool from the origin height Z, and A second step of obtaining a distance to a bonding surface height and storing the distance in a storage means; The first and third step and the difference D obtained by the third step of finding a difference D between the distance to the bonding surface from the origin height Z obtained by the second step
Is added to the bonding surface height of the pad X2 obtained in the second step to obtain the next bonding surface height.
And the n-th bonding point Xn, which is the bonding point after the pad determined in the fourth step.
Comprises a fifth step which is determined by an equation of Xn = X _n-1 + D _n-2 , wherein a predetermined X1st bonding point to an Xnth bonding point on one side of the semiconductor chip is set. When performing bonding in the first to fifth steps and performing bonding from a predetermined Y1 to Yn bonding points near the other end, the bonding tool is moved above the Y1 pad. And moving the bonding tool down from the height to obtain a distance from the origin height Z to the bonding surface height of the Y1th pad, and storing the distance in the storage means. A seventh step of obtaining a distance from the origin height Z to the bonding surface height of the Y2th pad and storing the distance in the storage means; An eighth step of obtaining a difference D 'between the origin height Z and the distance to the bonding surface obtained in the seventh step, and an n-th bonding point Yn of the bonding point Y following the eighth step. Is Yn =
This is obtained by the formula of Y _n-1 + D ' _n-2 .

According to a fourth aspect of the present invention, the bonding method is used when the semiconductor chip is divided into a plurality of groups and bonded.

According to a fifth aspect of the present invention, the semiconductor chip is divided into eight groups and bonded.

[0021]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to an embodiment shown in the drawings. First, FIG. 1 shows a main part of a wire bonding apparatus according to the present invention, and FIG. 2 shows a cross-sectional view taken along line AA in FIG.

In this wire bonding apparatus, a bonding arm 1 composed of a holding frame 1a and an ultrasonic horn 1b as shown in FIG.
About the center of the axis. The bonding arm 1 is firmly fitted to the support shaft 3, and the swing arm 2 is swingably attached to the support shaft 3. The support shaft 3 is rotatably provided via a bearing 34 provided on a head base 39 fixed and mounted on an XY table 33 movable in at least a two-dimensional direction shown in FIGS.

An ultrasonic vibrator (not shown) for exciting the horn 1b is incorporated in the holding frame 1a.

A solenoid 4a and an electromagnetic attraction piece 4b are fixed to the swing arm 2 and the holding frame 1a, respectively, so as to face each other. The bonding arm 1 and the swing arm 2 are fixed to each other by being energized from a power supply (not shown) to generate an attraction force between the power supply and the electromagnetic attraction piece 4b. An adjustable stopper 6 fixed to the swing arm 2 with a screw or the like is provided to prevent the swing arm 2 from being moved.

The swing arm 2 and the holding frame 1a have
A magnet 5a and a coil 5b are respectively mounted at a position in front of the electromagnetic attraction means. The magnet 5a and the coil 5b constitute a means for generating an attraction force for urging the tip of the bonding arm 1 at the time of bonding, that is, a portion holding the capillary 7 as a bonding tool downward in FIG. .

A clamp arm 8 is provided at the tip of the swing arm 2, and the wire 9 is gripped at the tip of the clamp arm 8 by an opening / closing mechanism (not shown) composed of a solenoid, a spring, and the like. A clamp 8a is provided as clamp means for cutting by a method described later. A torch rod 10 as an electric discharge means is disposed below the capillary 7 so as to be rotatable on a vertical axis (not shown) by the action of an actuator or the like, and rotates around the capillary 7 as the bonding arm 1 moves. It has a movable configuration.

The torch rod 10 applies a predetermined high voltage to form a ball at the tip of the wire 9. Above the clamp 8a, it is fixedly supported by a frame (not shown),
A predetermined tension is applied to the wire 9, and a tension clamp 11 that always holds the wire 9 straight to the tip of the capillary 7 of the bonding arm 1 and that can be opened and closed by an opening and closing mechanism (not shown) is provided. 9
Is wound by a spool 36 via the guide 12.

As shown in FIG. 2, a support shaft 15a is provided at the rear end of the swing arm 2, and the arm-side cam follower 15 and the swing base 16a rotate around the support shaft 15a. It is free. A bearing guide 16b is fixed to one end of the swing base 16a, and a preload arm 16d is rotatably attached to the other end of the bearing guide 16b via a support pin 15c.
A support shaft 17a is provided at a free end of the preload arm 16d, and a cam follower 17 is rotatably mounted on the support shaft 17a.

A preload spring 16e, which is a tension spring, is bridged between the tip of the preload arm 16d and the tip of the swing base 16a.
The cam follower 17 is pressed against a cam surface which is an outer peripheral surface of a cam 18 formed in a substantially heart shape. The two contact points of the arm side cam follower 15 and the cam follower 17 with respect to the cam surface 18 are located with the rotation center of the cam 18 interposed therebetween.

A frame structure is formed by the swing base 16a, the bearing guide 16b and the preload arm 16d.

The bearing guide 16b as a component of the swing frame 16 is a camshaft 1 on which a cam 18 is fitted.
9 is in contact with the outer ring of the radial bearing 20 attached to the radial bearing 20. Note that the cam 18 is connected to the motor 2 as a driving unit.
The rotation of the capillary 7 as a bonding tool is controlled with respect to a bonding point by rotating forward and backward by a torque applied to the camshaft 19 from the camshaft 19.

The detection of the height position, the amount of movement and the speed of the capillary 7 is performed by position detecting means connected to the support shaft 3 shown in FIG.

An angle sensor 38 as a position detecting means shown in FIG. 3 is a bearing provided on a head base 39 (only a part is shown in FIG. 3) fixed and mounted on an XY table 33. A magnetic angle sensor magnet 35, which is a cylindrical body having a substantially U-shaped cross-section, and is fixedly attached to one end of the support shaft 3 rotatable via a screw 34, and a frame of a head base 39 on an XY table 33. A sensor rod 37a attached to and fixed to the side of the body and detecting the detection unit is constituted by a magnetic angle sensor detection unit 37 inserted in a non-contact state into the cylinder of the magnetic angle sensor magnet 35.

The angle sensor 3 as the position detecting means
8, the magnetic angle sensor magnet 35 is rotated by the swinging movement of the bonding arm 1 with the support shaft 3 as a fulcrum.
An analog signal proportional to the angle of 5 is output.

The relationship between the output voltage of the angle sensor 38 and the angle is shown in FIG. This angle sensor 38
The analog signal obtained by the above is converted into a digital signal by an A / D converter (not shown) and is appropriately set so as to obtain an optimum resolution.

As shown in FIG. 4, if the output voltage of the magnetic angle sensor detecting section 37 is 1 V, it can be understood that the capillary 7 is at the position of 10 degrees, and the center of the horn 1b of the bonding arm 1 in the axial direction is the reference position. By adjusting the offset to 0 V, the moving amount and speed of the capillary 7 can be obtained. In addition, when an output of +1 V is obtained at the reference position of the magnetic angle sensor detection unit 37, the offset can be easily adjusted by setting to -1 V, so that the degree of attachment of the angle sensor 38 is not affected. .

Next, a case will be described in which the bonding apparatus according to the present invention is used to automatically update the height of the bonding tool and perform bonding.

As shown in FIG. 5, the semiconductor chip 25 adhered to the island at the center of the lead frame 27 placed on the bonding stage 26 by the paste 41.
There when inclined with respect to the reference surface 26 _R of the bonding stage 26 is the velocity of the bonding tool to be lowered from above the bonding stage may be impinging on the semiconductor chip 25 earlier than the switch from high speed to low speed. Moreover, the fear of this collision is that the bonding is performed as shown in FIG.
When bonding from side to side as shown in
The situation is different when bonding from side to side.

In order to cope with such a situation,
The conventional bonding method shown in FIG. 11 detects the height position at each bonding point and performs bonding. However, in this method, it is necessary to always secure a sufficient height at the time when the descent speed is reduced. Therefore, it is difficult to speed up the entire bonding.

In view of such a situation, according to the present invention, the time when the descent speed of the bonding tool is reduced with respect to the selected bonding position can be made earlier by an arbitrary amount.

The step of performing the bonding according to the present invention will be described with reference to FIGS. FIG. 6 is an explanatory diagram when bonding is performed from the side of FIG.
FIG. 6 is an explanatory diagram in the case of performing bonding from the side of FIG.

FIG. 8 is a flowchart for explaining FIG. 6, and FIG. 9 is a flowchart for explaining FIG.

The present invention is disclosed in Japanese Unexamined Patent Publication No.
As in the case of US Pat. No. 33943, the bonding tool moves from high speed to low speed in accordance with a predetermined profile.

As shown in FIGS. 6 and 7, first, the position of the origin of the Z-axis, which is a reference for measuring the height position of the bonding tool 7, is set in advance. The Z-axis origin can be set by an operator using operating means such as a keyboard provided in a bonding apparatus (not shown). The value of the Z-axis origin is set to a value that can sufficiently absorb a change in the height of the pad on the semiconductor chip to be bonded. It is also possible to correct and change the value of the axis origin by operating means such as the keyboard.

As shown in FIGS. 6 and 8, the bonding tool 7 descends at a low speed to the position of the pad X1 on the semiconductor chip, which is the first bonding point, according to a predetermined profile. At this time, the height h of the first bonding point X1 is set by measuring the distance h from the origin of the Z axis to the position of the bonding surface B'g, and stored in the memory as storage means in the bonding apparatus (step S).
1).

In step S2, the second bonding point X
2 is measured, and the difference D1 between X2 and X1 is measured.
To get.

In step S3, the difference D1 obtained in step S2 is added to X2, which is the second bonding point, to obtain the third difference.
The bonding point X3 is obtained. That is, X3 = X2 + D
Let it be 1. The obtained third bonding point, X
The difference D2 between the third bonding point X2 and the second bonding point X2 is obtained.

The procedure up to the n-th bonding point Xn is obtained by the same procedure (step S4). That is, X
_n = X _n-1 + D _{n-2 It is obtained by} the equation (1).

As described above, in this bonding apparatus, if the difference D1 between X1 as the first bonding point and X2 as the second bonding point is obtained, it can be similarly obtained up to the nth bonding point. In addition, it is not necessary to sufficiently raise the bonding point from the high speed to the low speed at each bonding point as in the related art, at which the bonding tool 7 is switched, and the speed can be increased.

The values of X1 to Xn are set by the above equation (1). In the bonding method according to the present invention, when there is an error between the value obtained by the above equation (1) and the actual bonding point. Is updated while correcting to the optimal value. That is, the corrected value is rewritten and stored in the memory.

The distance between the bonding points, that is, the distance between the pads, is set in the bonding apparatus in advance.

Next, the case of bonding from the side shown in FIGS. 5 and 7 will be described.

As shown in FIG. 9, the bonding tool 7
Moves to a position above the pad Y1 on the semiconductor chip, which is the first bonding point, at a low speed according to a predetermined profile. At this time, the bonding tool 7 moves to a height position of a height Xn + Z obtained by adding the height of the Z-axis to the height Xn obtained in step S4. Then, it descends from this height to the first bonding point Y1 to acquire the distance h 'between the Z-axis origin and the bonding surface B'g (step S5).

In step S6, the second bonding point Y
The distance h'1 to 2 is measured, and D'1, which is the difference between Y2 and Y1, is obtained.

In step S7, the third bonding point Y3 is obtained by adding the difference D'1 obtained in step S6 to the second bonding point Y2. That is, Y3 = Y
2 + D'1. The difference D 'between the obtained third bonding point Y3 and the second bonding point Y2.
Acquire 2.

The procedure up to the n-th bonding point Yn is obtained by the same procedure (step S8). That is, Y
_n = Y _n−1 + D ′ _{n−2 is obtained by} the equation (2).

The values of Y1 to Yn are also updated while being corrected to the optimum values as described above. The corrected value is rewritten and stored in the memory.

As described above, the bonding from the sides shown in FIGS. 5 to 7 can be performed. By performing such side-to-side bonding, bonding of one side of the semiconductor chip can be performed. Therefore, as shown in FIG.
Bonding can be performed for all the pads by appropriately performing the above-described respective sides.

In the present invention, as shown in FIGS. 6 and 7, one side of the semiconductor chip is bonded from the side and from the side. For example, only one side or only the side is bonded to all the pads on one side. May be performed. In this case, only the steps shown in FIG. 8 or FIG. 9 are performed.

The bonding shown in FIGS. 5 to 9 may be performed at any time of a self-teaching for setting various conditions of a bonding apparatus or the like or an actual bonding step, and may be appropriately used in other necessary steps. Of course, it is good.

[0061]

FIG. 1 shows a preferred embodiment for automatically updating the height of a bonding tool according to the present invention.
Explanation will be made using 0.

FIG. 10 shows a case where the pads 45 and the leads 42 of the semiconductor chip 25 are virtually divided into a plurality of groups and bonded as shown in FIGS.

In FIG. 10, the processing is performed in the following eight divisions. This group can be selected arbitrarily, and the bonding order can be appropriately selected and combined. However, for one side of the semiconductor chip 25, FIG.
And / or by the method of FIG.

The bonding by eight divisions shown in FIG. 10 is intended to be divided into groups for the purpose of preventing the bonding tool 7 from interfering with the wire 9 for which bonding has been completed. Therefore, the division is not limited to eight, and the division may be performed according to an optimal selection method.

The bonding method according to the present invention comprises:
The present invention is not limited to the wire bonding apparatus, and can be used as appropriate in other bonding apparatuses.

[0066]

As is apparent from the above description, according to the present invention, as shown in FIG. 11, bonding is performed at a high speed from the reference position to the first altitude h0, and then at a low speed. The operation of lowering the capillary to the surface and storing the data indicating the contact position h0 in the memory (RAM) is performed by measuring the height position of the pad as the first bonding point or the height position of the lead as the second bonding point for each line. High-speed processing can be achieved.

According to the present invention, even when the semiconductor chip is inclined with respect to a substrate such as a lead frame as shown in FIG. Since the tool is moved to the height position, the tool does not collide with the pad, and reliable bonding can be performed.

Further, according to the present invention, when a semiconductor chip is virtually divided into a plurality of groups as shown in FIG. The tool can be automatically updated to move the tool to an optimum height position to perform the bonding, and the bonding can be reliably performed without causing the bonding tool to interfere between the wires.

[Brief description of the drawings]

FIG. 1 is a diagram showing a main part of an embodiment of a wire bonding apparatus according to the present invention.

FIG. 2 is a sectional view taken along the line AA in FIG.

FIG. 3 is a diagram illustrating a configuration of an angle sensor as a position detection unit.

FIG. 4 is a diagram illustrating a relationship between an output voltage and an angle of the angle sensor illustrated in FIG. 3;

FIG. 5 is a partially enlarged view showing a state where a semiconductor chip is inclined with respect to a bonding stage.

FIG. 6 is an explanatory diagram in the case where bonding is performed from the side using the bonding method according to the present invention.

FIG. 7 is an explanatory diagram of a case where bonding is performed from the side using the bonding method according to the present invention.

FIG. 8 is a flowchart in the case of performing bonding from the side using the bonding method according to the present invention.

FIG. 9 is a flowchart in the case of performing bonding from the side using the bonding method according to the present invention.

FIG. 10 is an explanatory diagram of a case where a semiconductor chip is divided into eight groups and bonded;

FIG. 11 is a flowchart illustrating a conventional bonding method.

[Explanation of symbols]

Reference Signs List 1 bonding arm 2 swing arm 3 support shaft 7 capillary (bonding tool) 8 clamp arm 8a clamp 9 wire 10 torch rod 16 swing frame 18 cam 21 motor (driving means) 25 semiconductor chip (semiconductor component) (bonded component) 26 Bonding stage 27 Lead frame 33 XY table 38 Angle sensor 39 Head base 41 Paste 42 Lead (part to be bonded) 45 Pad

Claims (5)

[Claims] 1. A bonding method for performing bonding by positioning a lead frame and displacing a bonding tool with respect to the lead frame and the semiconductor chip, wherein the bonding tool is a preset first bonding point. A first step of moving the bonding tool down from the origin height as an upper reference and obtaining a distance from the origin height to the bonding surface height of the pad and storing the distance in a storage means; A second step of moving the bonding tool to an origin height above the pad, lowering the bonding tool from the origin height, obtaining a distance from the origin to the bonding surface height of the pad, and storing the distance in storage means; Difference between the height of the origin and the distance to the bonding surface obtained in the first and second steps And a fourth step of adding the difference obtained in the third step to the bonding surface height of the pad obtained in the second step to obtain the next bonding surface height. A bonding method, comprising: 2. An n-th bonding point X, which is a bonding point after the pad obtained in the fourth step.
n is Xn = X, where D is the difference in distance between pads.
_2. The bonding method according to claim 1, wherein the bonding method is obtained by an equation of _n-1 + Dn _-2 . 3. A bonding method for performing bonding by positioning a lead frame and displacing a bonding tool with respect to the lead frame and the semiconductor chip, wherein the bonding tool is a preset first bonding point. A first step of moving the bonding tool down from the origin height Z to a reference origin height Z above X1 to obtain a distance from the origin height Z to the bonding surface height of the pad X1, and storing the distance in the storage means; Origin height Z above pad X2 adjacent to pad X1
Moving the bonding tool downward from the origin height Z to obtain a distance to the bonding surface height of the pad X2 and storing the distance in a storage means; and A third step of obtaining a difference D between the origin height Z and the distance to the bonding surface obtained in the step of; and a pad X2 of the difference D obtained in the third step obtained by the second step. A fourth step in which the next bonding surface height is added to the bonding surface height, and an n-th bonding point Xn that is a bonding point after the pad obtained in the fourth step is Xn = X
a fifth step determined by an equation of _{( n-1} + Dn _-2 ), wherein the first to the (nth) bonding points from a preset X1st bonding point to an Xnth bonding point on one side of the semiconductor chip are provided. In the case where bonding is performed in step 5 and bonding is performed from a predetermined Y1 to Yn-th bonding point near the other end, the bonding tool is moved to Xn + Z, which is a reference above the Y1 pad. A sixth step of lowering the bonding tool from the height, obtaining a distance from the origin height Z to the bonding surface height of the Y1st pad, and storing the distance in the storage means; A seventh step of obtaining a distance from Z to the height of the bonding surface of the Y2nd pad and storing the distance in the storage means; and a sixth step and a seventh step. And an eighth step of calculating a difference D ′ between the height of the origin Z and the distance to the bonding surface obtained by the above-mentioned step. The n-th bonding point Yn of the bonding point Y following the eighth step is represented by Yn = A bonding method characterized in that it is determined by the formula of Y _n-1 + D ′ _n-2 . 4. The bonding method according to claim 1, wherein the bonding is performed when the semiconductor chip is divided into a plurality of groups and bonded. . 5. The bonding method according to claim 4, wherein the bonding is performed by dividing the semiconductor chip into eight groups.