JPH06310556A - Wire bonding method - Google Patents

Wire bonding method

Info

Publication number
JPH06310556A
JPH06310556A JP5121877A JP12187793A JPH06310556A JP H06310556 A JPH06310556 A JP H06310556A JP 5121877 A JP5121877 A JP 5121877A JP 12187793 A JP12187793 A JP 12187793A JP H06310556 A JPH06310556 A JP H06310556A
Authority
JP
Japan
Prior art keywords
wire
movement
capillary
bonding
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5121877A
Other languages
Japanese (ja)
Other versions
JP3124653B2 (en
Inventor
Hisashi Nomura
久司 野村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kaijo Corp
Original Assignee
Kaijo Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kaijo Corp filed Critical Kaijo Corp
Priority to JP05121877A priority Critical patent/JP3124653B2/en
Publication of JPH06310556A publication Critical patent/JPH06310556A/en
Application granted granted Critical
Publication of JP3124653B2 publication Critical patent/JP3124653B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/78Apparatus for connecting with wire connectors
    • H01L2224/7825Means for applying energy, e.g. heating means
    • H01L2224/783Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/78301Capillary
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8512Aligning
    • H01L2224/85148Aligning involving movement of a part of the bonding apparatus
    • H01L2224/85169Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
    • H01L2224/8518Translational movements
    • H01L2224/85181Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/852Applying energy for connecting
    • H01L2224/85201Compression bonding
    • H01L2224/85203Thermocompression bonding
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01013Aluminum [Al]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01023Vanadium [V]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01028Nickel [Ni]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01039Yttrium [Y]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01067Holmium [Ho]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01082Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE:To obtain an ideal loop by a voiding drastic acceleration in a mechanism system such as a bonding arm. CONSTITUTION:In a moving range wherein a capillary is moving, the moving characteristics of a capillary in the horizontal direction is formed so as to draw an approximately cycloid pattern when the pattern is indicated by the moving-speed vs. elapsed-time characteristic, and the moving characteristic of the capillary in the vertical direction is formed so that the movement is started after the elapse of the specified time (DELTAt) after the movement is started into the horizontal direction. Thus, the degree of the application of acceleration in the entire mechanism such as a bonding arm in the horizontal direction is decreased. The occurrence of problem such as causing defective bonding can be prevented.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体デバイスの組立
工程において、第1ボンディング点、例えば半導体チッ
プ上の電極(パッド)と、第2ボンディング点、例えば
リードフレームに配設された外部リードとをワイヤを用
いて接続するワイヤボンディング方法に関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a first bonding point, for example, an electrode (pad) on a semiconductor chip, and a second bonding point, for example, an external lead arranged on a lead frame, in a semiconductor device assembling process. The present invention relates to a wire bonding method for connecting wires using wires.

【0002】[0002]

【従来の技術】半導体デバイスの組立に際しては、ワイ
ヤボンディング装置によって金線又は銅、アルミニウム
などのワイヤを第1ボンディング点となる半導体チップ
上の電極と、第2ボンディング点となるリードとの間に
接続するように成される。
2. Description of the Related Art In assembling a semiconductor device, a wire bonding apparatus is used to connect a gold wire or a wire such as copper or aluminum between an electrode on a semiconductor chip serving as a first bonding point and a lead serving as a second bonding point. Made to connect.

【0003】図4は、この種のワイヤボンディング装置
によって成される一連のワイヤボンディング工程を示し
たものである。すなわち図4(a)乃至図4(h)はI
Cチップ1が有する多数のパッド1aのうち、いずれか
1つとこれに対応するリード2との間にそれぞれボンデ
ィングを行なう場合について工程順に示している。
FIG. 4 shows a series of wire bonding steps performed by this type of wire bonding apparatus. That is, FIG. 4A to FIG.
The case where bonding is performed between any one of the many pads 1a of the C chip 1 and the corresponding lead 2 is shown in the order of steps.

【0004】ボンディングステージ3上に載置されたI
Cチップ1上のパッド1a、すなわち第1ボンディング
点にワイヤボンディングを行なおうとする際には、まず
キャピラリ4に挿通されたワイヤ5の先端と図示せぬ電
気トーチとの間で高電圧の放電を行ない、ワイヤ5の先
端に予めボールを形成しておく。そしてキャピラリ4を
図示せぬ撮像装置等からの情報に基づいて、キャピラリ
4を保持するボンディングアーム(図示せず)等の機構
全体を載置したXYテーブルを移動させて位置決めした
後、キャピラリ4を図4(a)乃至図4(c)に示すよ
うに降下させて前記パッド1aにボールを押しつぶして
熱圧着ボンディングを行なう。この工程で(a)→
(b)はボンディングアームは高速で下降移動させ、
(b)→(c)では低速で移動させる。なおこの時、ワ
イヤ5をその中央に挿通させたクランパ6は開状態とな
っている。
The I mounted on the bonding stage 3
When attempting wire bonding to the pad 1a on the C chip 1, that is, the first bonding point, first, high voltage discharge is performed between the tip of the wire 5 inserted in the capillary 4 and an electric torch (not shown). The ball is formed in advance at the tip of the wire 5. Then, based on information from an imaging device (not shown) or the like, the capillary 4 is moved after positioning the XY table on which the entire mechanism such as a bonding arm (not shown) holding the capillary 4 is placed. As shown in FIGS. 4 (a) to 4 (c), the ball is crushed on the pad 1a by being lowered to perform thermocompression bonding. In this step (a) →
In (b), the bonding arm is moved down at high speed,
In (b) → (c), the vehicle is moved at low speed. At this time, the clamper 6 having the wire 5 inserted through the center thereof is in the open state.

【0005】次に第1ボンディング点への接続が終わ
り、(c)→(d)では前記クランパ6が開状態のまま
ボンディングアームが図4の上方向、すなわちZ軸方向
に上昇し、所定のループコントロールにしたがって
(e)に示すようにクランパ6が開の状態でワイヤ5が
引き出され、(f)に示す第2ボンディング点となるリ
ード2に接続される。この接続後キャピラリ4の先端部
にワイヤ5を(g)に示すように所定のフィード量fだ
け引き出した状態でクランパ6が閉じられる。この状態
でさらにボンディングアームを所定の高さまで上昇させ
る過程で(h)に示すように、ワイヤ5が第2ボンディ
ング点の部分でカットされる。そして再びワイヤ5の先
端部に電気トーチを用いてボールを形成し、クランパ6
を開状態として(a)の状態に移行する。このような一
連の工程により第1ボンディング点および第2ボンディ
ング点に対するワイヤボンディングが成される。
Next, after the connection to the first bonding point is completed, in (c) → (d), the bonding arm is moved upward in FIG. According to the loop control, the wire 5 is pulled out with the clamper 6 opened as shown in (e), and is connected to the lead 2 serving as the second bonding point shown in (f). After this connection, the clamper 6 is closed with the wire 5 pulled out from the tip of the capillary 4 by a predetermined feed amount f as shown in (g). In this state, the wire 5 is cut at the second bonding point as shown in (h) in the process of further raising the bonding arm to a predetermined height. Then, a ball is formed on the tip of the wire 5 again using the electric torch, and the clamper 6
Is opened and the state shifts to the state of (a). By such a series of steps, wire bonding is performed for the first bonding point and the second bonding point.

【0006】[0006]

【発明が解決しようとする課題】ところで、ワイヤボン
ディング装置において、キャピラリを移動させるワイヤ
ループコントロールとしては、図2に示すような円弧に
より駆動するのがよいとされている。これはキャピラリ
の移動に伴ってワイヤの送り出し量がほぼ一定となるか
らである。しかして、図2に示すようなワイヤループコ
ントロールを行うために従来のワイヤボンディング装置
においては、図5に示すような曲線パターンを用いて駆
動している。すなわち、前記図2に示すようなa−b間
の軌道を曲線軌道で動作させようとする場合、XYテー
ブルによる水平方向のX軸(Y軸)と垂直方向のZ軸と
の関係は、例えば、図5に示すようなパターンにて駆動
される。図5は縦軸にキャピラリの移動速度(V)を示
し、横軸を経過時間(t)で示したものであり、(イ)
は水平方向、すなわちX軸(Y軸)方向の駆動パターン
を示し、また(ロ)は垂直方向、すなわちZ軸方向の駆
動パターンが示されている。図5中、特に水平方向の駆
動パターン(イ)についてみると、略円弧パターンに成
されており、速度と時間の関係から移動距離(面積を含
む)となるから当該曲線軌道の初期駆動時に、キャピラ
リを含むボンディングアーム等の機構全体は急激な加速
度が加えられる結果となる。従って、ボンディングアー
ム等の機構全体に振動が発生する。これは図2に示すよ
うなキャピラリの軌道を達成するためにはXYテーブル
による水平方向への移動とZ軸、すなわち垂直方向への
移動を同時に行うために機構系等に負荷が加わるからで
ある。従って、これら振動によりワイヤの繰り出し量の
制御等が難しくなりボンディング不良を起こす等の問題
がある。
By the way, in the wire bonding apparatus, the wire loop control for moving the capillary is preferably driven by an arc as shown in FIG. This is because the wire feed amount becomes substantially constant as the capillary moves. Therefore, in order to perform the wire loop control as shown in FIG. 2, the conventional wire bonding apparatus is driven by using the curved pattern as shown in FIG. That is, when an a-b trajectory as shown in FIG. 2 is to be operated in a curved trajectory, the relationship between the horizontal X axis (Y axis) and the vertical Z axis by the XY table is, for example, , Are driven in a pattern as shown in FIG. In FIG. 5, the vertical axis represents the moving speed (V) of the capillary, and the horizontal axis represents the elapsed time (t).
Shows the drive pattern in the horizontal direction, that is, the X-axis (Y-axis) direction, and (B) shows the drive pattern in the vertical direction, that is, the Z-axis direction. In FIG. 5, particularly regarding the horizontal driving pattern (a), the driving pattern (a) is formed in a substantially arcuate pattern, and the moving distance (including the area) is obtained from the relationship between speed and time. The entire mechanism such as the bonding arm including the capillaries results in a sudden acceleration being applied. Therefore, vibration occurs in the entire mechanism such as the bonding arm. This is because in order to achieve the trajectory of the capillary as shown in FIG. 2, the movement in the horizontal direction by the XY table and the movement in the Z axis, that is, the vertical direction are performed simultaneously, so that a load is applied to the mechanical system and the like. . Therefore, due to these vibrations, it is difficult to control the wire feeding amount, which causes a problem such as a defective bonding.

【0007】そこで、本発明は従来の問題点に鑑みて成
されたものであって、ボンディングアーム等の機構全体
に急激な加速度が加えられるような動作を回避させ、理
想的なワイヤループを得ることができると共に前記した
従来の問題点を解消できるようにしたワイヤボンディン
グ方法を提供することを目的とするものである。
Therefore, the present invention has been made in view of the conventional problems, and avoids an operation in which a sudden acceleration is applied to the entire mechanism such as a bonding arm, and obtains an ideal wire loop. It is an object of the present invention to provide a wire bonding method capable of solving the above-mentioned conventional problems.

【0008】[0008]

【課題を解決するための手段】本発明は、キャピラリが
移動する移動範囲において、キャピラリの水平方向への
移動は、移動速度対経過時間特性に示した場合、略サイ
クロイドパターンを描くように成され、またキャピラリ
の垂直方向への移動は、前記水平方向への移動開始後所
定時間経過した後に開始されるようにしたものである。
また、本発明は、キャピラリが移動する移動範囲におい
て、キャピラリの水平方向への移動は、基準となる略サ
イクロイドパターンを用いて行い、キャピラリの垂直方
向への移動は、前記サイクロイドパターンの到達時間と
同じとなるように合わせ込まれてなる曲線パターンを用
いるようにしたものである。
According to the present invention, the movement of the capillaries in the horizontal direction in the movement range in which the capillaries move is formed so as to draw a substantially cycloidal pattern when the movement speed vs. elapsed time characteristics are shown. Further, the movement of the capillaries in the vertical direction is started after a lapse of a predetermined time from the start of the movement in the horizontal direction.
Further, the present invention, in the movement range in which the capillaries move, the movement of the capillaries in the horizontal direction is performed using a substantially cycloidal pattern that serves as a reference, and the movement of the capillaries in the vertical direction is the arrival time of the cycloidal pattern. It is designed to use a curved pattern that is matched so as to be the same.

【0009】[0009]

【実施例】以下、本発明に係るワイヤボンディング方法
について図1乃至図3に基づいて説明する。なお、本発
明に係るワイヤボンディング方法の一連の工程は、図4
に示すものと同様であるためその詳細な説明は省略す
る。
DESCRIPTION OF THE PREFERRED EMBODIMENTS A wire bonding method according to the present invention will be described below with reference to FIGS. The series of steps of the wire bonding method according to the present invention is shown in FIG.
Since it is the same as the one shown in FIG.

【0010】本発明に係るワイヤボンディング方法は、
図2に示すa点からb点に至る曲線軌道に沿ってキャピ
ラリを駆動制御するものである。すなわち、図1は縦軸
にキャピラリの移動速度(V)、横軸に経過時間(t)
として示した特性を示しており、図中曲線(ハ)はX
(Y)軸の駆動パターン、すなわちXYテーブルによっ
て成される水平方向の移動特性を示しており、図中曲線
(ニ)はZ軸の駆動パターン、すなわちボンディングア
ームの揺動によって成されるキャピラリの垂直方向の移
動特性を示している。
The wire bonding method according to the present invention is
The capillaries are driven and controlled along a curved trajectory from point a to point b shown in FIG. That is, in FIG. 1, the vertical axis represents the moving speed (V) of the capillary, and the horizontal axis represents the elapsed time (t).
The curve (C) in the figure indicates X.
The (Y) axis drive pattern, that is, the horizontal movement characteristics formed by the XY table are shown, and the curve (D) in the figure indicates the Z axis drive pattern, that is, the capillary formed by the swing of the bonding arm. The movement characteristics in the vertical direction are shown.

【0011】図1の曲線(ハ)によって理解されるとお
り、XYテーブルによって成される水平方向の移動特性
は、X(Y)パターンとして示されたように、略サイク
ロイドパターンに成されている。ここでいう略サイクロ
イドパターンとは、例えば株式会社日刊工業新聞社発行
の機械設計第33巻第3号(1989年3月号C言語に
よるカム曲線の計算と作図山梨大学牧野洋著第64頁)
に示されているサイクロイド曲線を含み、該サイクロイ
ド曲線を基準として図1に示すように速度Vを可変して
作成したパターンをも含む。
As can be seen from the curve (c) in FIG. 1, the horizontal movement characteristic formed by the XY table is formed in a substantially cycloid pattern as shown as the X (Y) pattern. The approximate cycloid pattern referred to here is, for example, Machine Design, Vol. 33, No. 3, published by Nikkan Kogyo Shimbun Co., Ltd. (March 1989 issue, calculation of cam curve in C language and drawing, Yamanashi University Hiroshi Makino, p. 64).
The cycloid curve shown in FIG. 1 is included, and a pattern created by changing the velocity V as shown in FIG. 1 on the basis of the cycloid curve is also included.

【0012】すなわち、図2のa点からb点に至る曲線
軌道の動作において、水平方向の移動はa点(t=0)
において初速0から動作が開始し、時間経過と共にサイ
クロイドパターンに従って移動速度が略2条特性で増加
し、a点とb点の略中間時点(t=th1 )で移動速度
が最高速となり、b点(t=t0 )において、その速度
は0になる特性で駆動される。こうすることによって、
図5に示す従来の特性に比較して初期駆動時において、
移動速度(V)の急激な変化を抑えることができる。従
って初期駆動時において、キャピラリを含むボンディン
グアーム等の機構全体に対して加えられる加速度は比較
的軽減される。
That is, in the operation of the curved trajectory from point a to point b in FIG. 2, the horizontal movement is point a (t = 0).
At the initial speed of 0, the movement speed increases with time according to the cycloid pattern with a substantially two-way characteristic, and the movement speed reaches the maximum speed at a point approximately midway between points a and b (t = th 1 ). At the point (t = t 0 ), the speed is driven so that it becomes zero. By doing this,
Compared with the conventional characteristics shown in FIG. 5, during initial driving,
It is possible to suppress a sudden change in the moving speed (V). Therefore, at the time of initial driving, the acceleration applied to the entire mechanism such as the bonding arm including the capillary is relatively reduced.

【0013】一方、キャピラリの垂直方向への移動特性
は、図1の(ニ)にZパターンとして示されるように、
前記水平方向への移動開始後所定時間(△t)経過した
後に初速0から動作が開始し、時間経過と共に速度が増
加し、a点とb点の略中間時点を若干過ぎた時点(t=
th2 )で移動速度が最高速となり、b点(t=t0
において、その速度は0になる特性で駆動される。な
お、前記所定時間(△t)は、一般に数msec程度に
設定される。このZパターンは、前記サイクロイドパタ
ーンを基準パターンとして時間t=t0 で到達時間が同
じとなるような曲線パターンにより合わせ込まれるよう
に制御される。
On the other hand, the movement characteristics of the capillaries in the vertical direction are as shown by the Z pattern in FIG.
After a lapse of a predetermined time (Δt) from the start of the movement in the horizontal direction, the operation starts from an initial speed of 0, the speed increases with the lapse of time, and a time (t =
The moving speed becomes the highest at th 2 ) and point b (t = t 0 ).
At, the speed is driven so that the speed becomes zero. The predetermined time (Δt) is generally set to about several msec. The Z pattern is controlled so as to be matched with a curved pattern having the same arrival time at time t = t 0 with the cycloid pattern as a reference pattern.

【0014】このようにキャピラリの水平方向および垂
直方向の移動特性、すなわち速度制御を持たせること
で、急激な加速度等により振動を発生することなく図2
に示すような理想的な曲線軌道を得ることができる。な
お図2の縦軸はZ軸方向の距離、換言すればキャピラリ
の上下方向の移動距離を示し、また横軸はX軸(Y軸)
方向の距離、換言すればキャピラリの水平方向の移動
(XYテーブルによって成される)距離を示している。
By thus providing the horizontal and vertical movement characteristics of the capillaries, that is, the speed control, there is no vibration due to abrupt acceleration or the like, as shown in FIG.
It is possible to obtain an ideal curved orbit as shown in. The vertical axis in FIG. 2 represents the distance in the Z-axis direction, in other words, the vertical movement distance of the capillary, and the horizontal axis represents the X-axis (Y-axis).
The distance in the direction, in other words, the horizontal movement (formed by the XY table) of the capillary is shown.

【0015】また図3はキャピラリの水平方向への移動
開始タイミングと垂直方向の駆動開始タイミングとの時
間差(△t)を変数とした場合のキャピラリの移動特性
を例示したものである。なお図3の縦軸はZ軸方向の距
離、換言すればキャピラリの上下(垂直)方向の移動距
離を示し、また横軸はX軸(Y軸)方向の距離、換言す
ればキャピラリの水平方向の移動距離を示している。そ
して前記△tが大になるにしたがって矢印(ホ)方向
に、また△tが小になるにしたがって矢印(ヘ)方向に
キャピラリの移動軌跡が変動することを示している。こ
の図3に示すようにキャピラリのZ軸方向へのスタート
タイミング(△t)を制御することにより、種々の曲線
軌道を得ることが可能であり、例えば第1ボンディング
点と第2ボンディング点の間に段差が存在する場合にお
いても、容易に理想とする曲線軌道を得ることが可能と
なる。
FIG. 3 exemplifies the movement characteristics of the capillary when the time difference (Δt) between the horizontal movement start timing and the vertical drive start timing is used as a variable. The vertical axis in FIG. 3 indicates the distance in the Z-axis direction, in other words, the vertical (vertical) movement distance of the capillary, and the horizontal axis indicates the distance in the X-axis (Y-axis) direction, in other words, the horizontal direction of the capillary. Shows the moving distance of. It is shown that the movement locus of the capillary fluctuates in the arrow (e) direction as Δt increases and in the arrow (f) direction as Δt decreases. By controlling the start timing (Δt) of the capillary in the Z-axis direction as shown in FIG. 3, various curved trajectories can be obtained, for example, between the first bonding point and the second bonding point. Even if there is a step, it is possible to easily obtain an ideal curved trajectory.

【0016】[0016]

【発明の効果】以上の説明で明らかなように、本発明の
ワイヤボンディング方法によると、キャピラリが移動す
る移動範囲において、キャピラリの水平方向への移動
は、移動速度対経過時間特性で示した場合、略サイクロ
イドパターンを描くように速度制御が成される。このよ
うにキャピラリの速度制御を成すことで、キャピラリが
移動する際に、ボンディングアーム等の機構全体に水平
方向への加速度が加わる度合いが軽減され、従来のワイ
ヤボンディング装置に見られるように、ボンディングア
ーム等の機構全体に振動を発生させ、ボンディング不良
を起こさせる等の問題点の発生を防止させることが可能
となる。また本発明のワイヤボンディング方法による
と、キャピラリの垂直方向への移動は、前記水平方向へ
の移動開始後所定時間経過した後に開始されるようタイ
ミング制御が成される。このようなタイミング制御によ
り、例えば第1ボンディング点と第2ボンディング点の
間に段差が存在する場合においても、容易に理想とする
曲線軌道を得ることが可能となる。
As is apparent from the above description, according to the wire bonding method of the present invention, the movement of the capillaries in the horizontal direction in the movement range in which the capillaries move is represented by the moving speed vs. elapsed time characteristics. , Velocity control is performed so as to draw a substantially cycloid pattern. By controlling the speed of the capillary in this way, when the capillary moves, the degree of horizontal acceleration applied to the entire mechanism such as the bonding arm is reduced, and as seen in the conventional wire bonding apparatus, It is possible to prevent the occurrence of problems such as causing bonding failure by generating vibration in the entire mechanism such as the arm. Further, according to the wire bonding method of the present invention, the timing control is performed such that the movement of the capillary in the vertical direction is started after a predetermined time has elapsed after the start of the movement in the horizontal direction. With such timing control, it is possible to easily obtain an ideal curved trajectory even when there is a step between the first bonding point and the second bonding point.

【図面の簡単な説明】[Brief description of drawings]

【図1】図1は、本発明に係るワイヤボンディング方法
によって駆動されるキャピラリの速度制御パターンを示
した特性図である。
FIG. 1 is a characteristic diagram showing a speed control pattern of a capillary driven by a wire bonding method according to the present invention.

【図2】図2は、本発明のワイヤボンディング方法によ
って得られるキャピラリの移動特性を示した特性図であ
る。
FIG. 2 is a characteristic diagram showing movement characteristics of capillaries obtained by the wire bonding method of the present invention.

【図3】図3は、図1における△tを変化させた場合の
キャピラリの移動特性を示した特性図である。
FIG. 3 is a characteristic diagram showing movement characteristics of capillaries when Δt in FIG. 1 is changed.

【図4】図4は、ワイヤボンディング装置によって成さ
れるボンディング工程図である。
FIG. 4 is a bonding process diagram formed by a wire bonding apparatus.

【図5】図5は、従来のワイヤボンディング方法によっ
て駆動されるキャピラリの速度制御パターンを示した特
性図である。
FIG. 5 is a characteristic diagram showing a speed control pattern of a capillary driven by a conventional wire bonding method.

【符合の説明】[Explanation of sign]

1 ICチップ 1a パッド(第1ボンディング点) 2 リード(第2ボンディング点) 3 ボンディングステージ 4 キャピラリ 5 ワイヤ 6 クランパ 1 IC chip 1a Pad (first bonding point) 2 Lead (second bonding point) 3 Bonding stage 4 Capillary 5 Wire 6 Clamper

Claims (2)

【特許請求の範囲】[Claims] 【請求項1】 第1ボンディング点にワイヤを接続後、
キャピラリを上昇させてワイヤループ形成に必要な量の
ワイヤを繰り出して第2ボンディング点上方に移動させ
てワイヤを第2ボンディング点に接続するようにしたワ
イヤボンディング方法において、 前記キャピラリが移動する移動範囲において、キャピラ
リの水平方向への移動は、移動速度対経過時間特性に示
した場合、略サイクロイドパターンを描くように成さ
れ、またキャピラリの垂直方向への移動は、前記水平方
向への移動開始後所定時間経過した後に開始されるよう
に成されたことを特徴とするワイヤボンディング方法。
1. After connecting a wire to the first bonding point,
In a wire bonding method, in which a capillary is raised to feed out an amount of wire necessary for forming a wire loop and to move the wire above a second bonding point to connect the wire to the second bonding point, a moving range in which the capillary moves In the above, the movement of the capillaries in the horizontal direction is performed so as to draw a substantially cycloid pattern when shown in the moving speed vs. elapsed time characteristics, and the movement of the capillaries in the vertical direction is performed after the start of the movement in the horizontal direction. A wire bonding method characterized in that it is started after a predetermined time has elapsed.
【請求項2】 第1ボンディング点にワイヤを接続後、
キャピラリを上昇させてワイヤループ形成に必要な量の
ワイヤを繰り出して第2ボンディング点上方に移動させ
てワイヤを第2ボンディング点に接続するようにしたワ
イヤボンディング方法において、 前記キャピラリが移動する移動範囲において、キャピラ
リの水平方向への移動は、基準となる略サイクロイドパ
ターンを用いて行い、キャピラリの垂直方向への移動
は、前記サイクロイドパターンの到達時間と同じとなる
ように合わせ込まれてなる曲線パターンを用いるように
したことを特徴とするワイヤボンディング方法。
2. After connecting the wire to the first bonding point,
In a wire bonding method, in which a capillary is raised to feed out an amount of wire necessary for forming a wire loop and to move the wire above a second bonding point to connect the wire to the second bonding point, a moving range in which the capillary moves In, the movement of the capillaries in the horizontal direction is performed using a substantially cycloidal pattern that serves as a reference, and the movement of the capillaries in the vertical direction is a curved pattern that is adjusted to be the same as the arrival time of the cycloidal pattern. A wire bonding method characterized in that a wire bonding method is used.
JP05121877A 1993-04-26 1993-04-26 Wire bonding method Expired - Lifetime JP3124653B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP05121877A JP3124653B2 (en) 1993-04-26 1993-04-26 Wire bonding method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP05121877A JP3124653B2 (en) 1993-04-26 1993-04-26 Wire bonding method

Publications (2)

Publication Number Publication Date
JPH06310556A true JPH06310556A (en) 1994-11-04
JP3124653B2 JP3124653B2 (en) 2001-01-15

Family

ID=14822140

Family Applications (1)

Application Number Title Priority Date Filing Date
JP05121877A Expired - Lifetime JP3124653B2 (en) 1993-04-26 1993-04-26 Wire bonding method

Country Status (1)

Country Link
JP (1) JP3124653B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6182885B1 (en) * 1998-09-07 2001-02-06 Kabushiki Kaisha Shinkawa Wire bonding method
JP2002057185A (en) * 2000-08-07 2002-02-22 Nec Corp Wire bonding device
KR100604307B1 (en) * 2000-05-27 2006-07-24 삼성테크윈 주식회사 Method of designing velocity profile for wire bonding system

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6182885B1 (en) * 1998-09-07 2001-02-06 Kabushiki Kaisha Shinkawa Wire bonding method
KR100604307B1 (en) * 2000-05-27 2006-07-24 삼성테크윈 주식회사 Method of designing velocity profile for wire bonding system
JP2002057185A (en) * 2000-08-07 2002-02-22 Nec Corp Wire bonding device
US6607112B2 (en) 2000-08-07 2003-08-19 Nec Corporation Wire bonding apparatus
JP4631138B2 (en) * 2000-08-07 2011-02-16 日本電気株式会社 Wire bonding equipment

Also Published As

Publication number Publication date
JP3124653B2 (en) 2001-01-15

Similar Documents

Publication Publication Date Title
US5816477A (en) Wire bonding apparatus and method
EP0983607B1 (en) Bump forming method and bump bonder
US5586713A (en) Method for wire bonding
JPH06310556A (en) Wire bonding method
JPH0547860A (en) Wire bonding method
JP3221191B2 (en) Bonding apparatus and bonding method
JP2555120B2 (en) Wire bonding method
JP3005781B2 (en) Motor control circuit for wire bonding equipment
JP2773541B2 (en) Wire bonding method and apparatus
JPH02199846A (en) Wire bonding
JP3313568B2 (en) Wire bonding apparatus and control method therefor
JP3493326B2 (en) Bump forming method and apparatus
JP3002022B2 (en) Bonding method
KR100585600B1 (en) Wire clamp
JP2000036512A (en) Wiring bonding device and method therefor and capillary used for the same device and method
JP3171012B2 (en) Wire bonding method and wire bonding apparatus
JP2001168136A (en) Wire bonding method
JP3754538B2 (en) Bonding method and bump bonder
JP2839223B2 (en) Wire bonding equipment
JPH07183321A (en) Wire bonding device
JPH0412541A (en) Semiconductor assembling device
JP4287036B2 (en) Bonding equipment
JPH05335367A (en) Wire bonding apparatus
JP2001168137A (en) Wire bonding method
JPH09205110A (en) Wire bonder

Legal Events

Date Code Title Description
FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20081027

Year of fee payment: 8

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20091027

Year of fee payment: 9

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101027

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20101027

Year of fee payment: 10

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111027

Year of fee payment: 11

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20111027

Year of fee payment: 11

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121027

Year of fee payment: 12

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20121027

Year of fee payment: 12

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20131027

Year of fee payment: 13

EXPY Cancellation because of completion of term