JPH10193259A - Holding mechanism of semiconductor wafer - Google Patents
Holding mechanism of semiconductor waferInfo
- Publication number
- JPH10193259A JPH10193259A JP35798096A JP35798096A JPH10193259A JP H10193259 A JPH10193259 A JP H10193259A JP 35798096 A JP35798096 A JP 35798096A JP 35798096 A JP35798096 A JP 35798096A JP H10193259 A JPH10193259 A JP H10193259A
- Authority
- JP
- Japan
- Prior art keywords
- holding
- wafer
- fluid
- polishing
- semiconductor wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体ウエーハを
研磨する際、ウエーハを保持しておく保持機構の改良に
関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an improvement in a holding mechanism for holding a wafer when polishing a semiconductor wafer.
【０００２】[0002]
【従来の技術】従来、例えばシリコンウエーハ、ＧａＡ
ｓウエーハ等の半導体ウエーハには、非常に高度な平坦
度が要求されており、ウエーハを研磨する際ウエーハを
保持しておく研磨プレートとして、ウエーハの背面側に
セラミックス又はガラス等の高剛性の材料を用いてウエ
ーハにかかる加工圧を面内均一とし、加工面の平坦度を
高めるようにした研磨プレートが知られている。また、
いわゆるバッチ方式によって複数のウエーハを同時に研
磨する際は、同一プレート内に複数のウエーハをセット
して研磨しているが、この場合でも、各ウエーハの加工
面の平坦度を高めるためウエーハ背面側の剛性を高める
のが一般的である。2. Description of the Related Art Conventionally, for example, silicon wafers, GaAs
Semiconductor wafers such as s wafers are required to have a very high degree of flatness, and a highly rigid material such as ceramics or glass is provided on the back side of the wafer as a polishing plate for holding the wafer when polishing the wafer. There has been known a polishing plate in which a processing pressure applied to a wafer is made uniform in a plane by using the method, and a flatness of a processed surface is enhanced. Also,
When simultaneously polishing a plurality of wafers by the so-called batch method, a plurality of wafers are set and polished in the same plate, but even in this case, the wafer back side is used to increase the flatness of the processed surface of each wafer. It is common to increase rigidity.
【０００３】また、ウエーハの平行度についても非常に
高い精度が要求されており、特に同一プレートに複数の
ウエーハをセットして同時に加工するバッチ方式の場
合、同一プレート内にセットされる加工前のウエーハの
厚みにバラツキがあると、研磨加工時に加工圧が不均一
となり、この結果、加工後のウエーハの平行度が悪化す
ることになる。そこで、加工前にウエーハの厚みを測定
して、厚みに応じて細かく分類し、厚みのバラツキが小
さくなるような組合わせで同一プレート内にセットして
研磨している。Also, very high precision is required for the parallelism of wafers. Particularly, in the case of a batch system in which a plurality of wafers are set on the same plate and processed at the same time, before the processing set in the same plate. If there is a variation in the thickness of the wafer, the processing pressure during polishing is not uniform, and as a result, the parallelism of the processed wafer is deteriorated. Therefore, before processing, the thickness of the wafer is measured, finely classified according to the thickness, and set and polished in the same plate in a combination such that the variation in thickness is reduced.
【０００４】[0004]
【発明が解決しようとする課題】ところが、加工面の平
坦度を確保するため研磨プレートの剛性を高める方法
は、特にバッチ方式において加工前の各ウエーハの厚み
にバラツキがある時には、加工圧を均一にするのに限度
があった。また、ウエーハの平行度を確保するため、予
め各ウエーハの厚みを測定して分類するやり方は、工数
増加を招いて時間がかかるという問題があった。However, the method of increasing the rigidity of the polishing plate in order to ensure the flatness of the processing surface is not particularly effective when the thickness of each wafer before processing in the batch method varies. There was a limit to Further, in order to secure the parallelism of the wafers, the method of measuring and classifying the thickness of each wafer in advance has a problem that the number of steps is increased and it takes time.
【０００５】そこで、プレートの剛性を上げる等の方法
をとることなく、しかも加工前にウエーハの厚みを測定
して分類するような手間を廃止しながらも、良好な平坦
度と平行度を得ることの出来る保持機構が望まれてい
た。Therefore, it is necessary to obtain good flatness and parallelism without taking measures such as increasing the rigidity of the plate and eliminating the trouble of measuring and classifying the thickness of the wafer before processing. There has been a demand for a holding mechanism that can perform the above.
【０００６】[0006]
【課題を解決するための手段】上記課題を解決するため
本発明は、請求項１において、半導体ウエーハの研磨時
にプレートの保持孔内にウエーハを保持しておく保持機
構として、ウエーハを背面から直接加圧する流体封入空
間部を備えた保持機構とした。そして流体封入空間部に
封入した流体によってウエーハの背面を直接加圧し、ウ
エーハの表面側を研磨するが、ウエーハの背面を直接加
圧することで、ウエーハ全域に均一な圧力を加えること
が出来、表面側の加工圧を均一に出来る。According to the present invention, in order to solve the above-mentioned problems, according to the present invention, as a holding mechanism for holding a wafer in a holding hole of a plate at the time of polishing a semiconductor wafer, the wafer is directly placed from the back. The holding mechanism was provided with a pressurized fluid filled space. The back surface of the wafer is directly pressurized by the fluid sealed in the fluid-filled space, and the front side of the wafer is polished.By directly pressing the back surface of the wafer, uniform pressure can be applied to the entire wafer, The processing pressure on the side can be made uniform.
【０００７】また請求項２では、前記保持機構として、
前記プレートと、このプレートの背面に当接し且つ保持
孔に連通する流体導入路を備えたトップリングから構成
し、前記流体封入空間部は保持孔内に形成するようにし
た。そして、プレートの保持孔内にウエーハを挿入して
保持し、このプレートの背面側にトップリングを当接さ
せるとともに、流体導入路から保持孔内に流体を供給
し、ウエーハの背面側から流体圧で加圧する。According to a second aspect of the present invention, as the holding mechanism,
The plate includes a top ring having a fluid introduction path in contact with the back surface of the plate and communicating with the holding hole, and the fluid sealing space is formed in the holding hole. Then, the wafer is inserted and held in the holding hole of the plate, the top ring is brought into contact with the back side of the plate, and fluid is supplied from the fluid introduction passage into the holding hole, and the fluid pressure is And pressurize.
【０００８】また請求項３では、流体封入空間部に封入
される流体を、エア又は水とした。また請求項４では、
流体の圧力を、研磨圧力の２０〜１００％の範囲とし
た。この際、２０％以下であれば加圧効果が充分でな
く、また１００％以上であれば流体が洩れ出してそれ以
上の加圧が出来なくなってしまう。In the third aspect, the fluid sealed in the fluid sealing space is air or water. In claim 4,
The fluid pressure was in the range of 20-100% of the polishing pressure. At this time, if it is 20% or less, the pressurizing effect is not sufficient, and if it is 100% or more, the fluid leaks out, and further pressurization cannot be performed.
【０００９】また請求項５では、トップリングとプレー
トの当接部及び保持孔とウエーハの当接部に、弾性体の
シール材を設けた。そしてこれらのシール材によって、
流体封入空間部に封入される流体の洩れ出しを防止す
る。According to a fifth aspect of the present invention, an elastic sealing material is provided at a contact portion between the top ring and the plate and a contact portion between the holding hole and the wafer. And with these sealing materials,
The leakage of the fluid sealed in the fluid sealing space is prevented.
【００１０】また請求項６では、保持孔内に、ウエーハ
を回転可能に保持する回転機構を設けた。そしてこの回
転機構によってウエーハを回転自在にすれば、研磨時に
ウエーハが回転し、ウエーハにかかる圧力を全域に亘っ
てより均一にすることが出来る。According to a sixth aspect of the present invention, a rotation mechanism for rotatably holding the wafer is provided in the holding hole. If the wafer is made rotatable by this rotation mechanism, the wafer rotates during polishing, and the pressure applied to the wafer can be made more uniform over the entire area.
【００１１】また請求項７では、回転機構として、保持
孔の内周部に沿って回転可能なリング部材と、このリン
グ部材に取付けられるリング状のシール材を設けた。そ
して、ウエーハの回転に連れてリング部材が一緒に回転
するようにすれば、ウエーハをよりスムーズに回転させ
ることが出来、圧力均一の面から一層効果的である。According to a seventh aspect of the present invention, as the rotating mechanism, a ring member rotatable along the inner peripheral portion of the holding hole and a ring-shaped sealing material attached to the ring member are provided. If the ring members are rotated together with the rotation of the wafer, the wafer can be rotated more smoothly, which is more effective in terms of uniform pressure.
【００１２】[0012]
【発明の実施の形態】本発明の実施の形態について添付
した図面に基づき説明する。ここで図１は本発明の保持
治具の縦断面図、図２はトップリングを下方から見た斜
視図、図３は研磨プレートの斜視図で（Ａ）は上方から
見た状態、（Ｂ）は下方から見た状態図、図４は保持孔
とシール材の止め付け状態を示す拡大断面図である。Embodiments of the present invention will be described with reference to the accompanying drawings. Here, FIG. 1 is a longitudinal sectional view of the holding jig of the present invention, FIG. 2 is a perspective view of the top ring viewed from below, FIG. 3 is a perspective view of the polishing plate, FIG. ) Is a state view as viewed from below, and FIG. 4 is an enlarged cross-sectional view showing a state in which the holding hole and the sealing material are fixed.
【００１３】本発明の半導体ウエーハの保持機構として
の保持治具は、シリコンウエーハ、ＧａＡｓウエーハ等
のウエーハを研磨する際、ウエーハを保持するための治
具として構成され、この保持治具１は、図１に示すよう
に、複数のウエーハＷ、…を保持する研磨プレート２
と、この研磨プレート２の背面を押え付けるトップリン
グ３からなる。The holding jig as a semiconductor wafer holding mechanism of the present invention is configured as a jig for holding a wafer when polishing a wafer such as a silicon wafer or a GaAs wafer. As shown in FIG. 1, a polishing plate 2 holding a plurality of wafers W,.
And a top ring 3 for pressing the back surface of the polishing plate 2.
【００１４】そして、各ウエーハＷ、…の背面側を後述
する流体圧で加圧して表面側の研磨具４に向けて押圧
し、研磨具４とトップリング３を相対回転させることで
ウエーハＷ、…の表面側を研磨するが、この研磨具４
は、回転自在な定盤５と、この定盤５の表面側に貼り付
けられる不織布の研磨パッド６からなる。Are pressurized by a fluid pressure described below and pressed toward the polishing tool 4 on the front side, and the polishing tool 4 and the top ring 3 are rotated relative to each other. The surface side of ... is polished.
Comprises a rotatable surface plate 5 and a non-woven polishing pad 6 attached to the surface of the surface plate 5.
【００１５】前記トップリング３は、図２にも示すよう
に、円盤状の研磨プレート２の形状とほぼ同径の円盤状
部を備えており、この円盤状部の下面の周縁部３ａを除
く中間部を彫り込んで円形凹部Ａ1 を形成するととも
に、トップリング３の中央部には、この円形凹部Ａ1 に
向けて開口する流体通路Ａ2 を形成しており、前記円形
凹部Ａ1 とこの流体通路Ａ2 によって流体導入路Ａを形
成するようにしている。そしてこの流体導入路Ａからエ
ア又は水の流体を供給出来るようにしている。As shown in FIG. 2, the top ring 3 is provided with a disk-shaped portion having substantially the same diameter as the shape of the disk-shaped polishing plate 2, except for a peripheral portion 3a on the lower surface of the disk-shaped portion. A circular recess A1 is formed by engraving the intermediate portion, and a fluid passage A2 opening toward the circular recess A1 is formed in the center of the top ring 3, and is formed by the circular recess A1 and the fluid passage A2. The fluid introduction path A is formed. Air or water fluid can be supplied from the fluid introduction passage A.
【００１６】また、トップリング３の周縁部３ａは、研
磨プレート２の上面側の周縁部に当接させて載置出来る
ようにされており、研磨プレート２に所定圧を加えるこ
とが出来るようにされている。また、トップリング３の
周縁部３ａの外側下面には、シール材としてのゴム製の
Ｏリング７を嵌装しており、このＯリング７によって、
周縁部３ａ下面と研磨プレート２上面の当接面をシール
するようにしている。因みに、トップリング３の自重は
例えば２００〜３００ｋｇである。The peripheral edge 3a of the top ring 3 is placed in contact with the peripheral edge on the upper surface side of the polishing plate 2 so that a predetermined pressure can be applied to the polishing plate 2. Have been. A rubber O-ring 7 as a sealing material is fitted on the outer lower surface of the peripheral portion 3 a of the top ring 3.
The contact surface between the lower surface of the peripheral portion 3a and the upper surface of the polishing plate 2 is sealed. Incidentally, the weight of the top ring 3 is, for example, 200 to 300 kg.
【００１７】前記研磨プレート２は、図３に示すよう
に、複数（この実施形態では４個）の貫通状の保持孔２
ａ、…を備えており、各保持孔２ａ、…内の内周縁部に
沿って、シール材としてＳＢＲ、ＮＢＲ等の合成ゴムを
はじめ、ゴム状弾性を有する高分子物質あるいはフロロ
ポリマー、塩化ビニル等の軟質な合成樹脂から成るリン
グ状のシールリング８、…を設けるとともに、各ウエー
ハＷ、…を挿入した際、シールリング８、…でウエーハ
Ｗの外周部を密封状に保持出来るようにされている。そ
して図１に示すように、研磨プレート２上にトップリン
グ３を載置した状態で、各保持孔２ａ、…は前記円形凹
部Ａ1 と連通するようにされている。As shown in FIG. 3, the polishing plate 2 has a plurality of (four in this embodiment) penetrating holding holes 2.
are provided along the inner peripheral edge of each of the holding holes 2a,..., as a sealing material, a synthetic rubber such as SBR or NBR, a polymer material having rubber-like elasticity, a fluoropolymer, or vinyl chloride. Are provided, and when the respective wafers W are inserted, the outer peripheral portions of the wafers W can be held in a sealed state by the seal rings 8,. ing. As shown in FIG. 1, when the top ring 3 is placed on the polishing plate 2, each holding hole 2a,... Communicates with the circular recess A1.
【００１８】また、前記シールリング８、…は、図４に
示すように、保持孔２ａの内周縁部に段部ｄを形成し、
この段部ｄにシールリング８を挟んで固定リング９を嵌
合させてボルト１０で研磨プレート２に止め付けるよう
にしており、シールリング８の内周縁端部をウエーハＷ
の上面に重ね合わせた状態で上方から流体圧が加わる
と、同部をシール出来るようになっている。As shown in FIG. 4, the seal rings 8 form a step d at the inner peripheral edge of the holding hole 2a.
The fixing ring 9 is fitted to the step d with the seal ring 8 interposed therebetween, and is fixed to the polishing plate 2 with bolts 10. The inner peripheral edge of the seal ring 8 is
When a fluid pressure is applied from above in a state of being superimposed on the upper surface, the same portion can be sealed.
【００１９】従って、図１に示すように、研磨プレート
２の保持孔２ａ、…内にウエーハＷ、…をセットした
後、研磨プレート２上にトップリング３を重ね合わせて
載置し、流体導入路Ａからエア等の流体を導入すると、
トップリング３の周縁部３ａと研磨プレート２の当接面
はＯリング７によってシールされ、また、各保持孔２
ａ、…とウエーハＷ、…の間はシールリング８によって
シールされるため、各保持孔２ａ、…の内部に密閉され
た流体封入空間部Ｂが形成されることになる。このた
め、流体封入空間部Ｂ、…の流体圧によって各ウエーハ
Ｗ、…を研磨具４に向けて均一な圧力で押付けることが
出来る。Therefore, as shown in FIG. 1, after setting the wafers W in the holding holes 2a,... Of the polishing plate 2, the top ring 3 is placed on the polishing plate 2 in a superimposed manner, and the fluid is introduced. When a fluid such as air is introduced from the path A,
The peripheral surface 3a of the top ring 3 and the contact surface between the polishing plate 2 are sealed by an O-ring 7, and each holding hole 2
are sealed by the seal ring 8, so that a sealed fluid-filled space B is formed inside each of the holding holes 2a. Therefore, the wafers W,... Can be pressed against the polishing tool 4 at a uniform pressure by the fluid pressure in the fluid-filled spaces B,.
【００２０】ところで、図５の実施形態は、保持孔２
ａ、…の内部にウエーハＷ、…の回転機構１１、…を設
けた場合の構成例図である。この回転機構１１は、保持
孔２ａの段部ｄに載置され保持孔２ａの内周縁部に沿っ
て回転自在な可動リング１２と、この可動リング１２に
ボルト１０によって固定されるシールリング８からな
り、シールリング８の内周縁端部がウエーハＷの上面に
重ね合わせることが出来るようにされている。By the way, the embodiment shown in FIG.
It is an example of a configuration in the case where a rotating mechanism 11,... of wafers W,. The rotating mechanism 11 includes a movable ring 12 mounted on a step d of the holding hole 2a and rotatable along an inner peripheral edge of the holding hole 2a, and a seal ring 8 fixed to the movable ring 12 by bolts 10. That is, the inner peripheral edge of the seal ring 8 can be superimposed on the upper surface of the wafer W.
【００２１】そしてこの場合は、研磨時のウエーハＷ、
…は可動リング１２、…と共に保持孔２ａ内を自由に回
転することが出来、研磨時の加工圧をより均一にするこ
とが出来る。In this case, the wafer W during polishing is
Can rotate freely in the holding hole 2a together with the movable rings 12, so that the processing pressure during polishing can be made more uniform.
【００２２】[0022]
【実施例】ここで、下記のような加工条件等で、厚みの
差が最大で１００μｍ異なる４枚のウエーハＷを同一研
磨プレート２にセットし、保持孔２ａの流体封入空間部
Ｂにエアを導入してウエーハＷを加圧するとともに、コ
ロイダルシリカを含むアルカリ性研磨液を用いて研磨を
する実験をした。この際、ウエーハＷをセットする際
は、各ウエーハＷを研磨パッド６の上に載置して、研磨
プレート２を被せるようなやり方で各保持孔２ａ内にセ
ットする。Here, under the following processing conditions, four wafers W having a maximum difference of 100 μm in thickness are set on the same polishing plate 2 and air is injected into the fluid-filled space B of the holding hole 2a. An experiment was conducted in which the wafer W was introduced and pressurized, and polished using an alkaline polishing liquid containing colloidal silica. At this time, when setting the wafer W, each wafer W is placed on the polishing pad 6 and set in each holding hole 2a in such a manner as to cover the polishing plate 2.
【００２３】（加工条件） ・ウエーハ：ＣＺ法により育成したＰ型シリコンウエー
ハ、直径１５０mm、厚み５３０〜６３０μｍ間で異なる
４枚 ・定盤５の回転数：４０ｒｐｍ ・トップリング３の回転数：４０ｒｐｍ ・研磨圧力：２００gf/cm2 ・背面エア圧：８０gf/cm2 (Processing conditions) Wafer: P-type silicon wafer grown by the CZ method, four wafers having a diameter of 150 mm and a thickness different from 530 to 630 μm ・ Rotation speed of platen 5: 40 rpm ・ Rotation speed of top ring 3: 40 rpm polishing pressure: 200 gf / cm 2 · rear air pressure: 80 gf / cm 2
【００２４】上記加工条件で研磨加工した結果、研磨前
のＴＴＶ（TOTAL THICKNESS VARIATION 、すなわちウエ
ーハ全面における最大厚と最小厚の差）は１．７μｍ
で、研磨後のＴＴＶは１．８μｍで、平坦度と平行度は
加工前の精度と殆ど差がなく、研磨加工によってウエー
ハＷの形状が崩れていないことが確認された。因みに、
同様なバラツキのあるウエーハを従来の方法で研磨した
ところ、研磨前のＴＴＶは１．８μｍで、研磨後のＴＴ
Ｖは１５．７μｍとなり、研磨によってウエーハＷ形状
が大きく崩れることも確認された。As a result of polishing under the above processing conditions, the TTV (TOTAL THICKNESS VARIATION, ie, the difference between the maximum thickness and the minimum thickness over the entire surface of the wafer) before polishing is 1.7 μm.
The TTV after polishing was 1.8 μm, the flatness and the parallelism were almost the same as the precision before processing, and it was confirmed that the shape of the wafer W was not broken by the polishing. By the way,
When a wafer having similar variation was polished by a conventional method, the TTV before polishing was 1.8 μm, and the TTV after polishing was
V was 15.7 μm, and it was also confirmed that the shape of the wafer W was largely destroyed by polishing.
【００２５】この際本発明では、ウエーハＷ、…の背面
側から直接エアで加圧しているため、ウエーハＷ、…の
厚みに差があっても、これを吸収するように作用してウ
エーハＷ、…全域に均一な加工圧を加えることが出来
る。しかも、ウエーハＷ、…を回転自在にした場合には
一層均一な研磨を行うことが出来る。尚、以上の実施例
では、背面エア圧を研磨圧力の４０％としているが、こ
れを研磨圧力の１００％以上にするとエアが洩れ出し、
２０％以下では、効果的な加圧を行うことが出来なかっ
た。また、加圧流体として、エアの代りに水を使用して
も良い。At this time, in the present invention, since the wafers W,... Are directly pressurized with air from the back side, even if there is a difference in the thickness of the wafers W,. , ... A uniform processing pressure can be applied to the whole area. In addition, when the wafers W are made rotatable, more uniform polishing can be performed. In the above embodiment, the back surface air pressure is set to 40% of the polishing pressure.
At less than 20%, effective pressurization could not be performed. Further, water may be used instead of air as the pressurized fluid.
【００２６】なお、本発明は、上記実施形態に限定され
るものではない。上記実施形態は、例示であり、本発明
の特許請求の範囲に記載された技術的思想と実質的に同
一な構成を有し、同様な作用効果を奏するものは、いか
なるものであっても本発明の技術的範囲に包含される。The present invention is not limited to the above embodiment. The above embodiment is an exemplification, and has substantially the same configuration as the technical idea described in the scope of the claims of the present invention. It is included in the technical scope of the invention.
【００２７】[0027]
【発明の効果】以上のように本発明は、半導体ウエーハ
を研磨する際、流体封入空間部に封入した流体によって
ウエーハを背面から直接加圧するようにしたため、ウエ
ーハ全域に均一な圧力を加えることが出来、平坦度、平
行度を良好に研磨加工出来る。この際、流体圧で直接加
圧するため、ウエーハの厚みに差があっても同一のプレ
ートで研磨することが出来、事前に厚み測定等を行う必
要がなく、工数減が図られる。また、研磨プレートの保
持孔内に、ウエーハを回転可能に保持する回転機構を設
ければ、研磨時にウエーハにかかる圧力を全域に亘って
より均一にすることが出来、一層効果的である。As described above, according to the present invention, when the semiconductor wafer is polished, the wafer is directly pressurized from the back surface by the fluid sealed in the fluid sealing space, so that a uniform pressure can be applied to the entire wafer. Polishing can be performed with good flatness and parallelism. At this time, since the wafer is directly pressurized by the fluid pressure, even if there is a difference in the thickness of the wafer, it can be polished with the same plate, and it is not necessary to measure the thickness in advance, thereby reducing the number of steps. Further, if a rotation mechanism for rotatably holding the wafer is provided in the holding hole of the polishing plate, the pressure applied to the wafer during polishing can be made more uniform over the entire area, which is more effective.
【図１】本発明の保持治具の縦断面図である。FIG. 1 is a longitudinal sectional view of a holding jig of the present invention.
【図２】トップリングを下方から見た斜視図である。FIG. 2 is a perspective view of the top ring as viewed from below.
【図３】研磨プレートの斜視図で（Ａ）は上方から見た
状態、（Ｂ）は下方から見た状態図である。FIGS. 3A and 3B are perspective views of the polishing plate, wherein FIG. 3A is a state viewed from above, and FIG.
【図４】保持孔とシール材の止め付け状態を示す拡大断
面図である。FIG. 4 is an enlarged cross-sectional view showing a state in which a holding hole and a sealing material are fixed.
【図５】保持孔に回転機構を設ける場合の構成例図であ
る。FIG. 5 is a configuration example diagram in a case where a rotation mechanism is provided in a holding hole.
１…保持治具、 ２…研磨プレー
ト、２ａ…保持孔、 ３…トップ
リング、３ａ…周縁部、 ４…研
磨具、５…定盤、 ６…研磨
パッド、７…Ｏリング、 ８…シ
ールリング、９…固定リング、 １
０…ボルト、１１…回転機構、 １
２…可動リング、Ａ…流体導入路、
Ａ1 …円形凹部、Ａ2 …流体通路、
Ｂ…流体封入空間部、ｄ…段部、
Ｗ…ウエーハ。DESCRIPTION OF SYMBOLS 1 ... Holding jig, 2 ... Polishing plate, 2a ... Holding hole, 3 ... Top ring, 3a ... Peripheral part, 4 ... Polishing tool, 5 ... Surface plate, 6 ... Polishing pad, 7 ... O-ring, 8 ... Seal ring , 9 ... Retaining ring, 1
0: bolt, 11: rotating mechanism, 1
2 ... movable ring, A ... fluid introduction path,
A1: Circular recess, A2: Fluid passage,
B: fluid-filled space, d: step,
W: Wafer.
Claims (7)
持孔内にウエーハを保持しておく保持機構であって、前
記ウエーハを背面から直接加圧する流体封入空間部を備
えたことを特徴とする半導体ウエーハの保持機構。1. A holding mechanism for holding a wafer in a holding hole of a plate during polishing of the semiconductor wafer, comprising a fluid-filled space for directly pressing the wafer from the back. Holding mechanism.
機構において、前記保持機構は、前記プレートと、この
プレートの背面に当接し且つ前記保持孔に連通する流体
導入路を備えたトップリングからなり、前記流体封入空
間部は前記保持孔内に形成されることを特徴とする半導
体ウエーハの保持機構。2. The holding mechanism for holding a semiconductor wafer according to claim 1, wherein the holding mechanism comprises a top ring provided with the plate and a fluid introduction path abutting on a back surface of the plate and communicating with the holding hole. Wherein the fluid-filled space is formed in the holding hole.
エーハの保持機構において、前記流体封入空間部に封入
される流体は、エア又は水であることを特徴とする半導
体ウエーハの保持機構。3. The semiconductor wafer holding mechanism according to claim 1, wherein the fluid sealed in the fluid sealing space is air or water.
記載の半導体ウエーハの保持機構において、前記流体の
圧力は、研磨圧力の２０〜１００％の範囲であることを
特徴とする半導体ウエーハの保持機構。4. The semiconductor wafer holding mechanism according to claim 1, wherein a pressure of the fluid is in a range of 20 to 100% of a polishing pressure. Wafer holding mechanism.
記載の半導体ウエーハの保持機構において、前記トップ
リングとプレートの当接部及び前記保持孔とウエーハの
当接部には、弾性体のシール材が設けられることを特徴
とする半導体ウエーハの保持機構。5. The semiconductor wafer holding mechanism according to claim 2, wherein a contact portion between the top ring and the plate and a contact portion between the holding hole and the wafer have an elastic body. A semiconductor wafer holding mechanism, wherein a sealing material is provided.
記載の半導体ウエーハの保持機構において、前記保持孔
内には、前記ウエーハを回転可能に保持する回転機構を
設けたことを特徴とする半導体ウエーハの保持機構。6. The semiconductor wafer holding mechanism according to claim 1, wherein a rotation mechanism for rotatably holding the wafer is provided in the holding hole. Semiconductor wafer holding mechanism.
機構において、前記回転機構は、前記保持孔の内周部に
沿って回転可能なリング部材と、このリング部材に取付
けられるリング状のシール材であることを特徴とする半
導体ウエーハの保持機構。7. The holding mechanism for holding a semiconductor wafer according to claim 6, wherein the rotation mechanism includes a ring member rotatable along an inner peripheral portion of the holding hole, and a ring-shaped seal attached to the ring member. A semiconductor wafer holding mechanism characterized by being a material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35798096A JP3898261B2 (en) | 1996-12-27 | 1996-12-27 | Semiconductor wafer holding mechanism |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35798096A JP3898261B2 (en) | 1996-12-27 | 1996-12-27 | Semiconductor wafer holding mechanism |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10193259A true JPH10193259A (en) | 1998-07-28 |
| JP3898261B2 JP3898261B2 (en) | 2007-03-28 |
Family
ID=18456939
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP35798096A Expired - Lifetime JP3898261B2 (en) | 1996-12-27 | 1996-12-27 | Semiconductor wafer holding mechanism |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3898261B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG80597A1 (en) * | 1997-08-11 | 2001-05-22 | Tokyo Seimitsu Co Ltd | Wafer polishing apparatus |
| CN111203807A (en) * | 2020-01-13 | 2020-05-29 | 刘和平 | Chemical mechanical polishing machine |
-
1996
- 1996-12-27 JP JP35798096A patent/JP3898261B2/en not_active Expired - Lifetime
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SG80597A1 (en) * | 1997-08-11 | 2001-05-22 | Tokyo Seimitsu Co Ltd | Wafer polishing apparatus |
| CN111203807A (en) * | 2020-01-13 | 2020-05-29 | 刘和平 | Chemical mechanical polishing machine |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3898261B2 (en) | 2007-03-28 |
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