JPH10190063A - Semiconductor light emitting element and semiconductor light emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device which is free of irregular luminance and irregular color and has a small size. SOLUTION: A semiconductor light emitting element formed on an insulating substrate 10 has at least a light emitting section 18, a wire bonding pad 15 for positive electrode, and a wire bonding pad 17 for negative electrode. The wire bonding pads 17 and 15 are arranged closely to each other and the light emitting section 18 is disposed closely to the long sides of the rectangular pads 17 and 15.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrode structure of a semiconductor light emitting device, and more particularly, to a shape of an electrode pad of a semiconductor light emitting device formed on an insulating substrate and a semiconductor light emitting device mounted using the same. .

[0002]

2. Description of the Related Art A semiconductor light emitting device such as a light emitting device (LED device) that emits light from the visible to the ultraviolet region has been realized by using a nitride semiconductor material represented by GaN, AlN, InN, or a mixed crystal thereof. . In these LED elements, a substrate such as a sapphire substrate is used as a growth substrate, but since these substrates are insulating substrates, it is necessary to take out a positive electrode and a negative electrode from the growth surface side, and various structures have been proposed. Have been.

FIG. 8 shows a conventional example using a nitride-based semiconductor material, which is disclosed in Japanese Patent Application Laid-Open No. 7-94782, the title of which is: a gallium nitride-based compound semiconductor light-emitting device, and the applicant: Nichia Corporation. .

FIG. 8A is a plan view of a conventional gallium nitride-based compound semiconductor light emitting device, and FIG.
It is the schematic cross section cut | disconnected by the FF 'line | wire of the top view of (a). In FIG. 8B, an n-type gallium nitride-based compound semiconductor layer 71 and a p-type gallium nitride-based compound semiconductor layer 73 are sequentially stacked on an insulating substrate 70 such as a sapphire substrate. A negative electrode 72 is formed on the compound semiconductor layer 71, and a positive electrode 74 is formed on the p-type gallium nitride-based compound semiconductor layer 73. Reference numeral 75 denotes a current-diffusing translucent electrode formed on substantially the entire surface of the p-type gallium nitride-based compound semiconductor layer 73, and 76 denotes a window for taking out the positive electrode 74 provided on the translucent electrode 73. Department.

In the plan view of FIG. 8A, reference numeral 70 denotes an insulating substrate such as a sapphire substrate, 71 denotes an n-type gallium nitride-based compound semiconductor layer, and 72 denotes an n-side negative electrode wire bonding pad (hereinafter referred to as a negative electrode). , 73 is a p-type gallium nitride compound semiconductor layer, 74 is a p-side positive electrode wire bonding pad (hereinafter, referred to as a positive electrode), and 75 is p
A current-transmitting light-transmitting electrode 76 formed on almost the entire surface of the type gallium nitride-based compound semiconductor layer 73 is a window for taking out the positive electrode 74 provided on the light-transmitting electrode 73. As shown in the figure, the p-side positive electrode 74 and the n-side negative electrode 72 are formed at diagonal corners.

Another conventional example having the same positive and negative electrode arrangement is disclosed in Japanese Patent Application Laid-Open No. 8-274377, the title of which is LED lamp, and the applicant is Nichia Corporation.

[0007]

However, the above-mentioned wire bonding pads 74 and 75 for electrodes are non-light-transmitting electrodes using a metal layer having a thickness greater than the thickness of transmitting light. Usually requires a size of about 100 μm square or more. Therefore, the light emitting pattern of a light emitting device having a structure in which both positive and negative electrodes are formed at diagonal corners of the device is constricted at the center and a substantially square dark portion is formed on both sides. It has a complicated light emitting pattern shape.

FIG. 9 is a view for explaining a light emitting pattern when the light emitting element 77 having such an arrangement of the positive and negative electrodes is assembled as a resin-molded semiconductor device (LED lamp) with a lens. Depending on the direction in which the lamp 78 is viewed, for example, the directions of 79 and 80, the light emission pattern has asymmetric shapes 81 and. Therefore, when an LED lamp having such directional characteristics is combined with another lamp, for example, when a full-color display panel is assembled, the ratio of mixing and color mixing with the other LEDs changes depending on the viewing angle, resulting in uneven brightness. Was recognized as color unevenness.

Further, since the electrodes are located at diagonal positions of the light emitting element, when the light emitting element 77 is mounted on a surface mount type lamp 83 as shown in FIG. In order to route the wires 86 and 87 so as not to cross the front surface of the light emitting portion 88 of the light emitting element 77 so as not to block the emitted light, as shown in FIG. The terminals 89 and 90 are connected to both sides of the light emitting element or as shown in FIG.
It must be formed on the side of the side, which hinders miniaturization of a lamp or the like incorporating a light emitting element. FIG. 10C is a schematic sectional view of FIG. 10A or FIG. 10B. The electrode terminals 89 and 90 and the electrode terminals 89 and 90 are provided on the bottom surface 92 of the mold case 91 of the surface-mounted semiconductor light emitting device 83. Semiconductor light emitting element 7
There are wires 86 and 87 for wire bonding between the electrodes 84 and 85 and the electrode terminals 89 and 90.

FIG. 11 is a diagram showing a configuration in which a plurality of light emitting elements are assembled into a surface-mounted semiconductor light emitting device in an array, and FIG. , 96 are arranged in parallel with the sides of the light emitting elements, and FIG. 11B is a plan view in which the sides of the light emitting elements are arranged in a rhombus shape with respect to the common wiring for power supply. It is.

In FIG. 11 (a), sections gg 'and h
Since the light intensity distribution at -h 'is shifted from the highest position as shown by 93 and 94, for example, when it is used as a document reading light source, it causes a decrease in reading accuracy. In order to maintain this reading accuracy, the arrangement shown in FIG. 11B is necessary. The light emitting elements are arranged at an angle of 45 degrees with respect to the parallel axis (the sides of the light emitting elements are arranged in a rhombus). Therefore, there is a problem that the outer size of the light source of the surface-mount type semiconductor light emitting device in the form of an array becomes large. 11A and 11B, 77 is a light emitting element, and 84 and 85 are semiconductor light emitting elements 7
7, electrodes 86 and 87 are wires for wire bonding,
88 is a light emitting portion of the light emitting element 77, 89 and 90 are electrode terminals,
Reference numerals 95 and 96 are common wirings for power supply.

[0012]

According to a first aspect of the present invention, there is provided a semiconductor light emitting device formed on an insulating substrate, wherein the semiconductor light emitting device includes at least a light emitting portion, a wire bonding pad for a positive electrode, and A wire bonding pad for the negative electrode, the wire bonding pad for the positive electrode and the wire bonding pad for the negative electrode are disposed in close proximity to each other, and the wire bonding pad for the positive electrode and the wire bonding pad for the negative electrode; The light-emitting portion of the semiconductor light-emitting element is disposed close to a long side portion formed by an outer shape.

According to a second aspect of the present invention, in the semiconductor light emitting device, the area of the insulating substrate is S ₁ , the area of the light emitting section is S ₂ , and a positive electrode wire bonding pad and a negative electrode wire bonding pad are provided. the sum of the area when the S _3,
S ₁ ≧ S ₂ + S ₃ , and S ₂ ≧ S ₃ .

According to a third aspect of the present invention, there is provided the semiconductor light emitting device, wherein the shape of the light emitting portion of the light emitting device is substantially square or substantially rectangular.

According to a fourth aspect of the present invention, in the semiconductor light emitting device, the light emitting portion of the light emitting device has a substantially circular or substantially polygonal shape.

Furthermore, a semiconductor light emitting device according to a fifth aspect of the present invention is characterized by being mounted using the semiconductor light emitting element according to the first aspect.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIGS. 1 to 7 relate to an embodiment of the present invention. Hereinafter, embodiments of the present invention will be described.

[Embodiment 1] FIG. 1 is a diagram showing a configuration of a light emitting device according to a first embodiment of the present invention, FIG. 1 (a) is a plan view, and FIG. Is a schematic sectional view.

In FIG. 1A, 10 is a sapphire substrate (square of about 350 μm), 18 is a light emitting portion (rectangular of about 300 μm × 170 μm), 15 is a wire bonding pad for a positive electrode, and 17 is a negative electrode. Wire bonding pads for electrodes, and wire bonding pads for positive and negative electrodes (squares of about 130 μm each) 15 and 17
Are disposed close to each other on the sapphire substrate, and the light emitting portion of the semiconductor light emitting element is disposed close to the long side formed by the outer shape of the wire bonding pad for the positive electrode and the wire bonding pad for the negative electrode. It is arranged. FIG.
FIG. 1B is a schematic sectional view taken along the line AA ′ of FIG.

Further, in FIG. 1A, the area S ₁ of the insulating substrate is a square of about 350 μm, S ₁ = about 0.123 mm ² , and the area S ₂ of the light emitting section is about 300
μm × 170 μm, S ₂ = about 0.051
mm ² and the sum of the areas of the positive electrode wire bonding pad and the negative electrode wire bonding pad is S
₃ is about twice as large as each about 130 μm square, S ₃ = about 0.034 mm ² . At this time, S _{1 to} 3.6 × S ₃ ,
S _{2 to} 1.5 × S ₃ . The wire bonding pads for the positive and negative positive electrodes are each about 100 μm square to about 16 μm square.
It is necessary to 0μm angle about the size, at this time, S ₂ ~
> 1.0 × S ₃ . Therefore, the relationship between the areas is S ₁ ≧ S ₂ + S ₃ and S ₂ ≧ S ₃ .

In FIG. 1B, a sapphire substrate 10
An n-type Al _X Ga _Y with a surface substantially parallel to the substrate exposed at the − side
In _1-XY N layer (0 ≦ X ≦ 1,0 ≦ Y ≦ 1) 11 is formed, on the same, and a light emitting layer Al _Z Ga _T In _1-ZT
N layer (0 ≦ Z ≦ 1, 0 ≦ T ≦ 1) layer 12, p-type Al _U G
a _V In _1-UV N layers (0 ≦ U ≦ 1, 0 ≦ V ≦ 1) 13 are laminated. The positive electrode 14 is made of p-type Al _U Ga _V In
_{A 1-UV} N layer 13 is formed on which a wire bonding pad for a positive electrode (hereinafter, referred to as a positive electrode pad) 15 is formed. The negative electrode 16 is formed on a partly exposed surface of the n-type Al _X Ga _Y In _1-XY N layer 11, and a negative electrode wire bonding pad (hereinafter, referred to as a negative electrode pad) 17 is formed thereon. . The light emitting unit 18 shown in FIG.
Are n-type Al _X Ga _Y In _1-XY N layers 11, Al _Z Ga _T I
It comprises an n _{1 -ZTN} layer 12 and a p-type Al _U Ga _V In _{1 -UV} N layer 13.

FIG. 2 shows that the light emitting element of FIG. 1 is a resin-molded light emitting diode lamp with a lens. The light emitting element is substantially not only in the vertical direction (19) but also in the right direction (20) and the left direction (21). Smooth directional characteristics could be obtained.

FIG. 3 is a diagram showing a configuration in a case where the light emitting device according to the first embodiment of the present invention is used to assemble a surface-mounted semiconductor light emitting device. FIG. 3 (a) is a plan view. FIG. 3B is a schematic sectional view taken along the line BB '.

In FIG. 3A, reference numeral 10 denotes a sapphire substrate (square of about 350 μm), 18 denotes a light emitting portion (rectangle of about 300 μm × 170 μm), 15 denotes a wire bonding pad for a positive electrode, and 17 denotes a negative electrode. Wire bonding pads for electrodes, and wire bonding pads for positive and negative electrodes (squares of about 130 μm each) 15 and 17
Are disposed close to each other on the sapphire substrate, and the light emitting portion of the semiconductor light emitting element is disposed close to the long side formed by the outer shape of the wire bonding pad for the positive electrode and the wire bonding pad for the negative electrode. It is arranged. Reference numerals 22 and 23 denote electrode terminals formed on the bottom surface of the mold case 26 of the surface-mount type semiconductor light emitting device by plating or the like.
Are wire bonding pads 15 and 17 for positive and negative electrodes
And is electrically wire-bonded.

In FIG. 3B, an electrode terminal 23 and a sapphire substrate 10 are provided on a bottom surface 27 of a mold case 26 of the surface-mount type semiconductor light emitting device. And electrode terminals 23
And the wire bonding pad 17 for the negative electrode
Are electrically wire-bonded. Also 2
8 is a transparent mold resin. Electrode terminals 22 and 23
Can be collected on one side of the light emitting element, and the size of the surface mount type semiconductor light emitting device incorporating the light emitting element can be reduced. Specifically, the external size of the surface-mount type semiconductor light emitting device shown in FIGS.
It is about 2mm x about 1.8mm x about 1.2mm in height.
It was possible to reduce the size to about 2.3 mm × about 1.2 mm in height.

FIG. 4 is a diagram showing a configuration in which a plurality of light emitting elements according to the first embodiment of the present invention are used to assemble them into a surface-mounted semiconductor light emitting device. 3, the electrode terminals 30 and 31 formed on the bottom surface of the mold case 29 of the surface-mounted semiconductor light emitting device by plating or the like are different from those in FIG. And 33
Are electrically connected to each other. Reference numerals 24 and 25 are gold wires connecting the electrode terminals 30 and 31 and the positive and negative electrode pads 15 and 17, respectively. As a result, the positive and negative electrodes are arranged close to each other, and the semiconductor light emitting element emits light in the vicinity of the long side formed by the outer shape of the wire bonding pad for the positive electrode and the wire bonding pad for the negative electrode. By disposing the portion, the gold wire from the light emitting element can be pulled out to the same side, and the conventional example shown in FIG.
The problem of the deviation of the light intensity on the axis, which was a problem in 1 (a),
The problem could be solved without using the oblique arrangement shown in FIG.

[Embodiment 2] FIG. 5 is a diagram showing a configuration of a light emitting device according to a second embodiment of the present invention. The light emitting section 34 is formed in a substantially square shape.
5A is a plan view, and FIG. 5B is a schematic sectional view.

In FIG. 5A, reference numeral 35 denotes a sapphire substrate (about 350 μm × about 480 μm rectangle).
Reference numeral 4 denotes a light-emitting portion (a square of about 300 μm × about 300 μm), 15 denotes a wire bonding pad for a positive electrode,
Denotes a wire bonding pad for a negative electrode. The positive and negative electrode wire bonding pads (each about 130 μm square) 15 and 17 are arranged close to each other on the sapphire substrate, and the outer shape of the positive electrode wire bonding pad and the negative electrode wire bonding pad is A light-emitting portion of the semiconductor light-emitting element is disposed near the long side portion to be formed. FIG. 5B is a schematic sectional view taken along the line CC ′ of FIG.

Further, in FIG. 5A, the area S ₁ of the insulating substrate is a rectangle of about 350 μm × about 480 μm, S ₁ = about 0.168 mm ² , and the area S ₂ of the light emitting portion is It is a square of about 300 μm × about 300 μm, and S ₂
= 0.09 mm ² , the sum of the area of the positive electrode wire bonding pad and the area of the negative electrode wire bonding pad, S _3, is about twice the square of about 130 μm each, and S ₃ = about 0.03 mm. 034 mm ² . At this time, S ₁ ~
4.9 × S ₃ and S _{2 to} 2.7 × S ₃ . Also,
Each wire bonding pad for positive and negative electrodes is about 100
It requires μm square to about 160μm square about the size, when this has a _{S 2 ~> 1.8 × S 3} . Accordingly, the relationship between the areas is S ₁ ≧ S ₂ + S ₃ , and S ₂ ≧ S ₃
In a relationship.

In FIG. 5B, the sapphire substrate 35
An n-type Al _X Ga _Y with a surface substantially parallel to the substrate exposed at the − side
In _1-XY N layer (0 ≦ X ≦ 1,0 ≦ Y ≦ 1) 11 is formed, on the same, and a light emitting layer Al _Z Ga _T In _1-ZT
N layer (0 ≦ Z ≦ 1, 0 ≦ T ≦ 1) layer 12, p-type Al _U G
a _V In _1-UV N layers (0 ≦ U ≦ 1, 0 ≦ V ≦ 1) 13 are laminated. The positive electrode 14 is made of p-type Al _U Ga _V In
_{A 1-UV} N layer 13 is formed on which a wire bonding pad 15 for a positive electrode is formed. Negative electrode 16 is n-type A
_{l X Ga Y In 1-XY} N layer 11 is formed on a part exposed on the surface of the wire bonding pads 17 for the negative electrode is formed thereon
To form The light emitting section 34 in FIG. 5A is an n-type Al _X G
a _Y In _1-XY N layer _{11, Al Z Ga T In 1} -ZT N layer 1
2, and it is composed of p-type _{Al U Ga V In 1-UV} N layer 13.

The wire bonding pads for positive and negative electrodes (squares of about 130 μm each) 15 and 17 are arranged close to each other on the sapphire substrate 35. With this electrode arrangement, a square light emitting section 34 could be obtained. With this light emitting element, a symmetrical light emitting pattern as shown in FIG. 2 was realized.

[Embodiment 3] FIG. 6 is a view showing a structure of a light emitting device according to a third embodiment of the present invention. The light emitting section 36 is formed in a substantially circular shape.
FIG. 6A is a plan view, and FIG. 6B is a schematic sectional view.

In FIG. 6A, reference numeral 35 denotes a sapphire substrate (a rectangle of about 350 μm × about 480 μm),
Reference numeral 6 denotes a light emitting portion (circle having a diameter of about 300 μm), reference numeral 15 denotes a positive electrode wire bonding pad, and reference numeral 17 denotes a negative electrode wire bonding pad. The positive and negative electrode wire bonding pads (each about 130 μm square) 15 and 17 are arranged close to each other on the sapphire substrate, and the outer shape of the positive electrode wire bonding pad and the negative electrode wire bonding pad is A light-emitting portion of the semiconductor light-emitting element is disposed near the long side portion to be formed. FIG. 6B is a schematic sectional view taken along line DD ′ of FIG.
Shown in

Further, in FIG. 6A, the area S ₁ of the insulating substrate is a rectangle of about 350 μm × about 480 μm, S ₁ = about 0.168 mm ² , and the area S ₂ of the light emitting portion is It is a circle having a diameter of about 300 μm, and S ₂ = about 0.07
1 mm ² , the sum of the area of the wire bonding pad for the positive electrode and the wire bonding pad for the negative electrode, S ₃
Is about twice as large as each 130 μm square, and S ₃ = about 0.034 mm ² . At this time, S _{1 to} 4.9 × S ₃ ,
S _{2 to} 2.1 × S ₃ . The wire bonding pads for the positive and negative positive electrodes are each about 100 μm square to about 16 μm square.
It is necessary to 0μm angle about the size, at this time, S ₂ ~
> 1.4 × S ₃ . Therefore, the relationship between the areas is S ₁ ≧ S ₂ + S ₃ and S ₂ ≧ S ₃ .

In FIG. 6B, the sapphire substrate 35
An n-type Al _X Ga _Y with a surface substantially parallel to the substrate exposed at the − side
In _1-XY N layer (0 ≦ X ≦ 1,0 ≦ Y ≦ 1) 11 is formed, on the same, and a light emitting layer Al _Z Ga _T In _1-ZT
N layer (0 ≦ Z ≦ 1, 0 ≦ T ≦ 1) layer 12, p-type Al _U G
a _V In _1-UV N layers (0 ≦ U ≦ 1, 0 ≦ V ≦ 1) 13 are laminated. The positive electrode 14 is made of p-type Al _U Ga _V In
_{A 1-UV} N layer 13 is formed on which a wire bonding pad 15 for a positive electrode is formed. Negative electrode 16 is n-type A
_{l X Ga Y In 1-XY} N layer 11 is formed on a part exposed on the surface of the wire bonding pads 17 for the negative electrode is formed thereon
To form The light emitting section 36 in FIG. 6A is an n-type Al _X G
a _Y In _1-XY N layer _{11, Al Z Ga T In 1} -ZT N layer 1
2, and it is composed of p-type _{Al U Ga V In 1-UV} N layer 13.

The wire bonding pads for positive and negative electrodes (squares of about 130 μm each) 15 and 17 are arranged close to each other on the sapphire substrate 35, and the wire bonding pads for positive electrode and the wire bonding for negative electrode are provided. A light-emitting portion of the semiconductor light-emitting element is disposed close to a long side formed by the outer shape of the pad. With this electrode arrangement, a square light emitting section 34 could be obtained. With this light emitting element, a symmetrical light emitting pattern as shown in FIG. 2 was realized.

In particular, the shape of the circular light emitting portion of the present invention has an advantage that the mounting angle can be selected when the light emitting element is mounted on a lead frame or the like. That is, when a light emitting element in the form of a light emitting portion that is not point-symmetrical is mounted on an axially symmetrical lead frame, the directional pattern of light emission with respect to the direction of the lead frame differs depending on the mounting angle. Can be avoided.

[Embodiment 4] FIG. 7 is a view showing a structure of a light emitting device according to a fourth embodiment of the present invention, in which a light emitting section 37 is formed in a substantially polygonal shape. 7
7A is a plan view, and FIG. 7B is a schematic sectional view.

In FIG. 7A, reference numeral 35 denotes a sapphire substrate (a rectangle of about 350 μm × about 480 μm).
Reference numeral 7 denotes a light emitting portion (polygon having an outer diameter of about 300 μm),
5 is a wire bonding pad for a positive electrode, and 17 is a wire bonding pad for a negative electrode. Wire bonding pads for positive and negative electrodes (square of about 130 μm each) 15
And 17 are disposed close to each other on the sapphire substrate, and emit light of the semiconductor light emitting element in the vicinity of a long side formed by the outer shape of the wire bonding pad for the positive electrode and the wire bonding pad for the negative electrode. Department is arranged. FIG. 7A is a schematic sectional view taken along the line EE ′ of FIG.
(B).

In FIG. 7B, the sapphire substrate 35
An n-type Al _X Ga _Y with a surface substantially parallel to the substrate exposed at the − side
In _1-XY N layer (0 ≦ X ≦ 1,0 ≦ Y ≦ 1) 11 is formed, on the same, and a light emitting layer Al _Z Ga _T In _1-ZT
N layer (0 ≦ Z ≦ 1, 0 ≦ T ≦ 1) layer 12, p-type Al _U G
a _V In _1-UV N layers (0 ≦ U ≦ 1, 0 ≦ V ≦ 1) 13 are laminated. The positive electrode 14 is made of p-type Al _U Ga _V In
_{A 1-UV} N layer 13 is formed on which a wire bonding pad 15 for a positive electrode is formed. Negative electrode 16 is n-type A
_{l X Ga Y In 1-XY} N layer 11 is formed on a part exposed on the surface of the wire bonding pads 17 for the negative electrode is formed thereon
To form The light emitting section 37 in FIG. 7A is an n-type Al _X G
a _Y In _1-XY N layer _{11, Al Z Ga T In 1} -ZT N layer 1
2, and it is composed of p-type _{Al U Ga V In 1-UV} N layer 13. Wire bonding pads for positive and negative electrodes (each about 1
30 μm squares) 15 and 17 are sapphire substrates 35
A light-emitting portion of the semiconductor light-emitting element, which is disposed close to the top of the semiconductor light-emitting element, and is disposed close to a long side formed by the outer shape of the positive electrode wire bonding pad and the negative electrode wire bonding pad. ing. With this electrode arrangement, a polygonal light emitting portion 37 could be obtained. With this light emitting element, a symmetrical light emitting pattern as shown in FIG. 2 was realized.

In particular, the shape of the polygonal light emitting portion of the present invention is such that the closer the shape becomes to a circular shape, the more the light emitting portion is mounted on a lead frame or the like.
There is an advantage that the mounting angle is not selected. That is,
In the case of a light-emitting pattern that is not point-symmetric, when the light-emitting pattern is mounted on an axially symmetrical lead frame, the directional pattern of light emission with respect to the direction of the lead frame differs depending on the mounting angle. In the present embodiment, this problem can be ignored. Could be reduced.

[0042]

As described above, according to the semiconductor light emitting device of the first aspect of the present invention, the semiconductor light emitting device is formed on an insulating substrate, and the semiconductor light emitting device includes at least a light emitting portion and a positive electrode. A wire bonding pad for the positive electrode and a wire bonding pad for the negative electrode, the wire bonding pad for the positive electrode and the wire bonding pad for the negative electrode are disposed in close proximity to each other, and the wire bonding pad for the positive electrode and the negative electrode A light emitting portion of the semiconductor light emitting device is disposed close to a long side portion formed by an outer shape of a wire bonding pad for forming a wire. The lead wire can be pulled out in one direction, and the size of the semiconductor light emitting device can be reduced. Further, since the light emitting portion has a simple shape, a symmetrical light emitting pattern (radiation characteristic) can be obtained when the light emitting portion is assembled in a semiconductor manufacturing apparatus. Furthermore, when a plurality of semiconductor light emitting devices of the present invention are arranged in an array, unevenness in brightness (brightness) can be reduced.

According to the semiconductor light emitting device of the second aspect of the present invention, the area of the insulating substrate is S ₁ , the area of the light emitting portion is S ₂ , the positive electrode wire bonding pad and the negative electrode wire bonding. When the sum of the area of the pad and the pad is S ₃ , S ₁ ≧ S ₂ + S ₃ and S ₂ ≧ S ₃ , and the wire bonding pad for positive and negative positive electrodes is A size of about 100 μm square to about 160 μm square is required, and the area of the light emitting portion can be set to be larger than the area of the predetermined insulating substrate, so that the size of the semiconductor light emitting element can be reduced. it can.

According to a third aspect of the present invention, there is provided the semiconductor light emitting device, wherein the shape of the light emitting portion of the light emitting device is substantially square or substantially rectangular.
Since the light emitting portion has a simple shape, a symmetrical light emitting pattern (radiation characteristic) can be obtained when the light emitting portion is assembled in a semiconductor manufacturing apparatus.

According to the semiconductor light emitting device of the present invention, the shape of the light emitting portion of the light emitting device is substantially circular or substantially polygonal. Has a simple shape, so that when assembled in a semiconductor manufacturing apparatus, a symmetrical light-emitting pattern (radiation characteristic) can be obtained. In addition, when the shape of the light-emitting portion is particularly close to point symmetry, such as a square, a polygon, and a circle, it becomes easier to obtain the radiation characteristics of the center axis, and to improve the performance of a semiconductor light-emitting device, for example, a light-emitting panel to which this is applied. Was completed.

Further, according to the semiconductor light emitting device of the fifth aspect of the present invention, the semiconductor light emitting device is mounted using the semiconductor light emitting element of the first aspect, and has a smooth light emitting pattern, and particularly has a collective lamp type. A semiconductor device (LED lamp) having excellent directivity for display can be obtained.

[Brief description of the drawings]

FIGS. 1A and 1B are diagrams showing a configuration of a light emitting device according to a first embodiment of the present invention, wherein FIG. 1A is a plan view, and FIG. 1B is a sectional view taken along line AA ′ of FIG. It is a schematic sectional drawing.

FIG. 2 is a schematic diagram of a light emitting diode lamp in which a light emitting element according to the first embodiment of the present invention is resin-molded with a lens.

FIGS. 3A and 3B are diagrams showing a configuration when a light emitting element according to the first embodiment of the present invention is used to assemble a surface-mount type semiconductor light emitting device, wherein FIG. 3A is a plan view and FIG. () Is a schematic sectional view taken along the line BB 'of (a).

FIG. 4 is a diagram showing a configuration when a plurality of light emitting elements according to the first embodiment of the present invention are used to assemble a surface-mounted semiconductor light emitting device.

FIG. 5 is a diagram showing a configuration of a light emitting device according to a second embodiment of the present invention, in which a light emitting portion is formed in a substantially square shape, (a) is a plan view, and (b) FIG. 3 is a schematic sectional view taken along line CC ′ of FIG.

FIG. 6 is a diagram showing a configuration of a light emitting device according to a third embodiment of the present invention, in which a light emitting portion is formed in a substantially circular shape, (a) is a plan view, and (b) Is D in (a)
It is the schematic sectional drawing cut | disconnected by the -D 'line.

FIG. 7 is a diagram showing a configuration of a light emitting device according to a fourth embodiment of the present invention, in which a light emitting portion is formed in a substantially polygonal shape, (a) is a plan view, and (b) is a plan view. () Is a schematic sectional view taken along line EE 'of (a).

8A and 8B are explanatory views of a gallium nitride-based compound semiconductor light emitting device using a conventional nitride-based semiconductor material, wherein FIG. 8A is a plan view and FIG. 8B is an FF ′ line of FIG. It is the schematic sectional drawing cut | disconnected by.

FIG. 9 is a diagram illustrating a light emitting pattern when a gallium nitride based compound semiconductor light emitting element using a conventional nitride based semiconductor material is assembled into a resin molded semiconductor device (LED lamp) with a lens.

FIGS. 10A and 10B are explanatory views in which a gallium nitride-based compound semiconductor light-emitting device using a conventional nitride-based semiconductor material is mounted on a surface-mounted lamp; FIGS. 10A and 10B are plan views; (c) is a schematic sectional view of (a) or (b).

FIG. 11 is an explanatory view in which a plurality of gallium nitride-based compound semiconductor light-emitting elements using a conventional nitride-based semiconductor material are mounted on an array-type surface-mounted semiconductor light-emitting device using a plurality of light-emitting elements. FIG. 9 is a plan view when the sides of the light emitting element are arranged in parallel with the common wirings 95 and 96 for
(B) is a plan view in the case where the sides of the light emitting elements are arranged in a diamond shape with respect to the common wiring for power supply.

[Explanation of symbols]

Reference Signs List 10 sapphire substrate as an insulating substrate 11 n-type Al _X Ga _Y In _1-XY N layer (0 ≦ X ≦ 1, 0
≦ Y ≦ 1) is a 12-emitting layer _{Al Z Ga T In 1-ZT} N layer (0 ≦ Z
≦ 1,0 ≦ T ≦ 1) 13 p -type _{Al U Ga V In 1-UV} N layer (0 ≦ U ≦ 1,0
≦ V ≦ 1) 14 Positive electrode 15 Wire bonding pad for positive electrode (hereinafter referred to as positive electrode pad) 16 Negative electrode 17 Wire bonding pad for negative electrode (hereinafter referred to as negative electrode pad) 18 Rectangular light emitting portion 19 Vertical On-axis light-emitting pattern 20 Right-side light-emitting pattern 21 Left-side light-emitting pattern 22, 23 Electrode terminal 24, 25 Gold wire 26 Mold case of surface-mounted semiconductor light emitting device 27 Bottom surface of mold case 26 28 Transparent mold resin 29 Mold case for surface mounted semiconductor light emitting device 30, 31 Electrode terminal 32, 33 Common line 34 Square light emitting part 35 Rectangular sapphire substrate 36 Circular light emitting part 37 Polygonal light emitting part

Claims (5)

[Claims] 1. A semiconductor light emitting device formed on an insulating substrate, said semiconductor light emitting device having at least a light emitting portion, a wire bonding pad for a positive electrode, and a wire bonding pad for a negative electrode. A pad and the wire bonding pad for the negative electrode are disposed in close proximity to each other, and the semiconductor light emitting element is disposed close to a long side formed by the outer shape of the wire bonding pad for the positive electrode and the wire bonding pad for the negative electrode. A semiconductor light emitting device comprising a light emitting unit. 2. The semiconductor light emitting device according to claim 1, wherein the area of the insulating substrate is S ₁ , the area of the light emitting section is S ₂ ,
When the sum of the areas of the positive electrode wire bonding pad and the negative electrode wire bonding pad is S ₃ , S ₁ ≧ S
_2. A semiconductor light emitting device, wherein ₂ + S ₃ and S ₂ ≧ S ₃ . 3. The semiconductor light emitting device according to claim 1, wherein the shape of the light emitting portion of the light emitting device is substantially square or substantially rectangular. 4. The semiconductor light emitting device according to claim 1, wherein a shape of a light emitting portion of said light emitting device is substantially circular or substantially polygonal. 5. A semiconductor light-emitting device mounted using the semiconductor light-emitting element according to claim 1.