JP2002232015A - Semiconductor light emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a surface mounting type semiconductor light emitting device which can be used for both top light emission and for side light emission and also can enhance the brightness in light emission. SOLUTION: This semiconductor light emitting device is equipped with a mounting board 1 where quartercircular n-electrodes 1a and p-electrodes 1b are made at four corners, an LED5 which is mounted on the mounting board 1, being made electrically contionous to the n-electrode 1a and the p-electrode 1b, and a light reflective case 2 which is joined with the mounting board 1, surrounding the LED5.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

[0001] 1. Field of the Invention [0002] The present invention relates to a semiconductor light emitting device provided with a surface mount type light emitting diode (LED), which can be used for both top emission and side emission.

[0002]

2. Description of the Related Art Conventionally, a surface-mounted type semiconductor light emitting device has an LED chip conductively mounted on a substrate on which electrodes are formed because of the necessity of miniaturization, and this chip is sealed with epoxy resin. What stopped is the general structure. In such a surface-mount type semiconductor light-emitting device, top-surface light emission in which light is emitted upward from the mounting surface is mainly used. Also, a semiconductor light emitting device arranged as a backlight light source of a liquid crystal display panel used for display of a mobile phone or the like has a light emitting direction directed sideways and has substantially the same configuration. When these semiconductor light emitting devices are used alone, they only emit light using an LED chip as a light source.
Brightness can be increased by using a mount portion of a lead frame to reflect light like a lamp.

[0003]

However, in the conventional surface-mount type semiconductor light-emitting device, the light-emitting direction can be set only upward to the mounting surface. For this reason, a dedicated semiconductor device for side emission is required, and it is necessary to stock both top emission and side emission semiconductor devices. For this reason, it is necessary to prepare two types of dies for manufacturing a semiconductor device, one for top emission and one for side emission, and the manufacturing equipment becomes complicated.

In a surface-mounted type semiconductor light emitting device,
As described above, when used alone, the LED chip emits light only using the LED chip as a light source, and does not have a reflection function. For this reason, there is a limit to the improvement in light emission luminance.

As described above, in the conventional surface mount type semiconductor light emitting device, it is necessary to manufacture the top and side surface light emitting devices as dedicated components, respectively, and there remains a problem that the light emission luminance needs to be improved.

SUMMARY OF THE INVENTION It is an object of the present invention to provide a surface-mounted semiconductor light emitting device that can be used for both top emission and side emission, and that can also improve emission luminance.

[0007]

SUMMARY OF THE INVENTION According to the present invention, 1/4
A mounting substrate on which an arc-shaped n-electrode and a p-electrode were formed, an LED mounted on the mounting substrate by conducting to the n-electrode and the p-electrode, respectively, and the LED was surrounded and joined to the mounting substrate. And a light reflecting case.

According to the present invention, there is provided a surface-mounted semiconductor light emitting device which can be used for both top emission and side emission, and which can improve emission luminance.

[0009]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The invention according to claim 1 is characterized in that the mounting substrate is formed by forming a quarter-arc n-electrode and a p-electrode at four corners, and the n-electrode and the p-electrode are electrically connected to each other. And a light-reflecting case surrounding the LED and joined to the mounting substrate, and can be used for both top emission and side emission. At the same time, it has an effect that the light emission luminance can be improved.

An embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a schematic perspective view of a semiconductor light emitting device according to the present embodiment, FIG. 2 is a side view, and FIG. 3 is a front view when the semiconductor light emitting device is mounted on a wiring board for side emission.

In the figure, a frame-shaped case 2 having the same outer shape as the mounting substrate 1 is integrally joined on an insulating mounting substrate 1 having four corners cut out in a quarter-arc shape by an adhesive 3. Have been.

The mounting substrate 1 has a substantially rectangular planar shape and has four corners cut out in a quarter-arc shape, and the cut-out portions are provided with a pair of n-electrodes 1a and p-electrodes 1b, respectively. The n-electrode 1a and the p-electrode 1b are formed by forming a through hole in the mounting substrate 1 and performing metal plating. Also, on the upper surface of the mounting substrate 1, n
An n-electrode pattern 4a and a p-electrode pattern 4b that are electrically connected to the electrode 1a and the p-electrode 1b, respectively, are formed.

On the p electrode pattern 4b, a blue light emitting L
An ED5 is arranged, and this LED5 has p
It is electrically connected to the electrode pattern 4b and bonded to the n-electrode pattern 4a by the wire 6. In addition,
A fluorescent substance (for example, (Y, G) for converting the wavelength of blue light to white light is provided on the main light extraction surface on the upper surface of the LED 5.
_{d) 3 (Al, Ga)} 5 O 12: Ce) wavelength conversion layer 7 comprising
Are formed.

The case 2 is formed by plating the inside of the LED 5 with Ni or Pd to increase the light reflectance.
The light emission luminance is increased by reflecting the light emitted from the light source.

In the above configuration, as shown in FIG.
The mounting board 1 is mounted on the circuit board 8 with the mounting board 1 facing downward.
The n-electrode 1a and p-electrode 1b can be electrically connected to the wiring pattern of the circuit board 8 and fixed by soldering using the surfaces of the / 4 arc-shaped n-electrode 1a and p-electrode 1b as lands. Then, when power is supplied from the power supply side, LE
D5 emits light and the wavelength is converted by the wavelength conversion layer 7 to obtain white light as top emission. When this light is emitted, LED
Since the wavelength conversion layer 5 and the wavelength conversion layer 7 are surrounded by the frame-shaped case 2, the light emission luminance can be increased by utilizing the reflection by the inner surface of the case 2.

For such a top emission, as shown in FIG. 3, the side surfaces of the mounting substrate 1 and the case 2 are mounted on the circuit board 8 and solder 9 is attached with the n-electrode 1a and the p-electrode 1b as lands. For example, side emission can be achieved. Also in this side emission, the light emitted from the LED 5 and the wavelength conversion layer 7 is reflected by the inner surface of the case 2, and the emission luminance can be increased.

Even when the wiring pattern of the circuit board 8 has a polarity opposite to that of FIG. 3, the n-electrode 1a and the p-electrode 1b are provided at the four corners.
Can be handled by turning the semiconductor light emitting device upside down.

As described above, the four corners of the mounting board 1
Since the arc-shaped n-electrode 1a and p-electrode 1b are formed, it can be used for top emission and side emission only by changing the orientation of the mounting board 1 with respect to the circuit board 8 upward or sideways. Therefore, it is not necessary to separately provide a mold and manufacturing equipment for top emission and side emission as in the related art, and it is possible to reduce the manufacturing cost. In addition, the provision of the light-reflective case 2 makes it possible to improve the light emission luminance as compared with the conventional structure, and can be used for high-luminance illumination.

[0020]

According to the present invention, the semiconductor light emitting device can be used for both the top emission and the side emission, so that the application of the semiconductor light emitting device can be expanded. Can be obtained.

[Brief description of the drawings]

FIG. 1 is a schematic perspective view of a semiconductor light emitting device of the present invention.

FIG. 2 is a schematic side view when the semiconductor light emitting device is mounted on a circuit board.

FIG. 3 is a front view of the semiconductor light emitting device mounted on a circuit board for side emission;

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 mounting board 1 an n electrode 1 b p electrode 2 case 3 adhesive 4 a n electrode pattern 4 b p electrode pattern 5 LED 6 wire 7 wavelength conversion layer 8 circuit board 9 solder

Claims (1)

[Claims] An LED mounted on the mounting substrate by mounting a 基板 arc-shaped n-electrode and a p-electrode at four corners, electrically connecting the n-electrode and the p-electrode to each other, and mounting the LED on the mounting substrate. A light-reflective case surrounding and bonded to the mounting substrate.