JPH10189801A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device, having superior heat dissipating property, which can be used for the consumer appliances such as electronic appliances, electric appliances, communication appliances and measurement control appliances. SOLUTION: A connecting conductor 2b is embedded in a via hole where the surface, on which the semiconductor device 4 of wiring substrate 1 is mounted, and the surface opposite to this surface and metal balls 3 made of high temperature solder will be arranged, are electrically connected. By forming the metal balls 3, consisting of high temperature solder, on the part directly below the connecting conductor 12b, heat is sufficiently dissipated from the semiconductor device, the bonding strength of the solder balls 3, consisting of high temperature solder, can be increased, and a semiconductor with superior reliability device can be provided.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device used for electric equipment such as electronic equipment, electric equipment, communication equipment and measurement control equipment.

[0002]

2. Description of the Related Art A conventional semiconductor device will be described below.

A conventional semiconductor device is composed of a wiring board made of a resin material such as polyimide or polyester. A semiconductor device is mechanically mounted on a first surface of the wiring board, and each of the semiconductor devices is mounted. The electrodes are electrically connected to a plurality of wiring electrodes formed on the first surface of the wiring board by metal wires.

On the other hand, a plurality of solder balls are arranged on the second surface of the wiring board so as to be planar with a predetermined dimension with respect to the second surface. The provided semiconductor device is electrically connected to each of the plurality of solder balls via a plurality of via holes for electrically connecting the first surface and the second surface of the wiring substrate.

[0005] Each of the plurality of solder balls is formed at a location apart from each of the via holes, and is electrically connected to a wiring conductor formed on the second surface of the wiring board.

[0006]

However, the configuration of the conventional semiconductor device uses a resin substrate as a wiring substrate,
Because the semiconductor device is electrically connected to the solder balls via via holes and wiring conductors, the heat conduction of the semiconductor device itself is poor, and high-power semiconductor devices cannot be used. Had the problem of getting lost.

An object of the present invention is to provide a semiconductor device having excellent heat dissipation.

[0008]

In order to solve the above-mentioned problems, a semiconductor device according to the present invention comprises a surface on which a semiconductor device on a wiring board having excellent heat dissipation as a material of the wiring board is mounted; Solder is buried in a via hole that electrically connects the surface on which the solder balls facing each other are arranged, and a solder ball is formed immediately below the via hole.

With this configuration, sufficient heat radiation from the semiconductor device can be achieved, and the bonding strength of the solder ball can be increased.

[0010]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The invention according to claim 1 of the present invention is directed to a wiring board having a first surface and a second surface, and the wiring board mounted on the first surface of the wiring board. A semiconductor device electrically connected to the circuit pattern formed on the first surface, a plurality of via holes for electrically connecting the first surface and the second surface of the wiring substrate, and embedded in each of the via holes Ball formed of a connected conductor and a high-temperature solder for connection to a circuit board arranged to be planar with respect to the second surface with the second surface of the wiring substrate having a predetermined dimension. And the via holes are arranged so as to correspond to each of the plurality of wiring electrodes formed on the first surface of the wiring substrate, and the metal ball made of the high-temperature solder is formed of each of the connection conductors embedded in the via holes. Arranged directly below A semiconductor device which is characterized, with the effect that sufficient heat dissipation can be achieved as a semiconductor device.

According to a second aspect of the present invention, the connection conductor is a semiconductor device made of a material having good thermal conductivity, and has an effect of rapidly transmitting heat generated from a semiconductor device to a metal ball made of high-temperature solder.

According to a third aspect of the present invention, there is provided a semiconductor device in which a connection conductor is formed of solder, and has an effect that a via hole can be easily filled by a low temperature process.

According to a fourth aspect of the present invention, there is provided a semiconductor device in which a metal ball made of a high-temperature solder and a connection conductor are made of the same material as the solder, and the metal ball made of the high-temperature solder and the connection conductor are easily metal-bonded. It has the effect of increasing the bonding strength.

According to a fifth aspect of the present invention, there is provided a semiconductor device in which the wiring substrate is made of ceramic, which has an effect that heat dissipation can be further improved.

According to a sixth aspect of the present invention, there is provided a semiconductor device in which metal balls and connection conductors made of high-temperature solder use solders having different melting points, and have an effect of realizing a semiconductor device without disconnection.

(First Embodiment) FIG. 1 is a sectional view of a semiconductor device according to a first embodiment of the present invention. In FIG. 1, reference numeral 1 denotes a wiring board, which is made of ceramic (alumina sintered) or the like. Reference numeral 2 denotes a through hole provided in the wiring board 1, and as shown in FIG. 2, a metal ball made of a high-temperature solder facing the surface on which the semiconductor device (bare chip) 4 is mounted on the wiring board 1 In order to electrically connect the surfaces on which the arrays 3 are formed, a conductive material 2a is formed on the hole walls to form via holes. Ag-Pd paste is used as the conductive material 2a.
Reference numeral 2b denotes a connection conductor formed in the via hole 2 to quickly conduct heat generated from the semiconductor device 4 to a circuit board (not shown). Reference numeral 7 denotes a metal wire for electrically connecting the semiconductor device 4 and the wiring board 1 by a wire bonding apparatus. Reference numeral 5 denotes a high heat conductive insulating adhesive formed on the surface of the wiring substrate 1 on which the semiconductor device 4 is mounted.

Reference numeral 6 denotes a wiring conductor formed as a circuit pattern on the surface on which the semiconductor device 4 is mounted. As shown in FIG. 3, a wiring electrode 6a to which the metal wire 7 is bonded is connected between each via hole. Here, an Ag-Pd paste is used as the wiring conductor 6 and the wiring electrode 6a. Reference numeral 8 denotes a first protection resin for protecting the metal wires 7 that electrically connect the semiconductor device 4 and the wiring board 1 with a wire bonding apparatus. 9
Is a second protective resin formed on the first protective resin 8 for planarization so that an automatic surface mounting machine can be used, and further protecting the semiconductor device 4. Reference numeral 3 denotes a metal ball made of a high-temperature solder formed immediately below the connection conductor 2b filled in the via hole. Here, eutectic solder is used for the connection conductor 2b and the metal ball 3 made of high-temperature solder, and the melting point of the solder as the connection conductor 2b is higher than the melting point of the solder as the metal ball 3 made of the high-temperature solder. Specifically, the melting point of the solder for the connection conductor 2b is 250 ° C. The solder as the metal ball 3 made of a high-temperature solder of 290 ° C. is used.

On the other hand, a conductive material 2a for the via hole 2 is printed on one surface of a ceramic wiring board 1 provided with a plurality of holes for the via hole 2 using an Ag-Pd paste, and the wiring electrode 6a and the wiring The conductor 6 is printed, and the conductive material 2a for via holes is printed from the other surface using an Ag-Pd-based paste. Thereafter, baking is performed at 850 degrees to bake the Ag-Pd based paste. Next, eutectic solder is filled into each via hole 2 of the wiring board 1 to form connection conductors 2b, and metal balls 3 made of high-temperature solder are formed by eutectic solder immediately below each connection conductor 2b. At this time, the metal balls 3 composed of the plurality of high-temperature solders are arranged in a plane from the surface of the wiring board 1 with a predetermined dimension. Next, the semiconductor device 4 is mounted on the wiring board 1, the processing of the metal wires 7 is performed by the wire bonding method, the resin is sealed with the first and second protective resins 8 and 9, and the desired semiconductor device is formed. It is said.

In this semiconductor device, the connection conductors 2b are compared with solder as metal balls 3 made of high-temperature solder.
Since the melting point of the solder is high, there is no re-melting of the connection conductor 2b previously formed when the metal ball 3 made of high-temperature solder is formed, and the disconnection of the connection conductor 2b can be prevented.

The semiconductor device having the above structure is mounted on a circuit board (not shown) by an automatic surface mounter, and an external voltage is applied from the electrode pads of the circuit board to the connection conductors 2b through metal balls 3 made of high-temperature solder on the wiring board 1. Further, the semiconductor device 4 is electrically connected to the semiconductor device 4 from the wiring conductor 6 through the metal wire 7, and the semiconductor device 4 performs a specific circuit process, and outputs the circuit to the circuit board through the electric connection path. At this time, the heat generated in the semiconductor device 4 is conducted from the semiconductor device 4 to the wiring board 1 through the high heat conductive insulating adhesive 5 and is conducted from the metal ball 3 made of high-temperature solder to the circuit board via the connection conductor 2b. I do. Further, it is released from the surface of the wiring board 1 into the air.

Although the case where the wiring board is made of a ceramic substrate has been described, a resin substrate may be used instead of the ceramic substrate. In this case as well, the solder is buried in a via hole that electrically connects the surface on which the semiconductor device is mounted on the resin substrate and the surface on which the metal balls made of high-temperature solder facing the surface are formed, and directly under the via hole. With the configuration in which the solder balls are formed, sufficient heat radiation as a semiconductor device can be achieved, and the bonding strength of the solder balls can be increased.

Although the semiconductor device is mounted by the wire bonding method, the semiconductor device may be mounted on the wiring board by a flip chip bonding method or the like.

[0023]

As described above, the integrated circuit device of the present invention
A conductor connected to a via hole that electrically connects the wiring board with excellent heat dissipation and the surface on which the semiconductor device is mounted on this wiring substrate and the surface on which metal balls made of high-temperature solder facing this surface are arranged and formed And a metal ball made of a high-temperature solder is formed immediately below the connection conductor, thereby providing a semiconductor device having excellent heat radiation properties to a heat-generating component such as a high-power bare chip.

[Brief description of the drawings]

FIG. 1 is a sectional view of a semiconductor device according to an embodiment of the present invention.

FIG. 2 is an enlarged cross-sectional view of the main part.

FIG. 3 is a perspective view of a wiring board used in the manufacturing.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Wiring board 2 Via hole (through hole) 2a Conductive material 2b Connection conductor 3 Metal ball made of high-temperature solder 4 Semiconductor device 5 High heat conductive insulating adhesive 6 Wiring conductor 7 Metal wire 8 First protective resin 9 Second protective resin

Claims (6)

[Claims] 1. A wiring board having a first surface and a second surface, and a circuit pattern mounted on the first surface of the wiring substrate and electrically formed on a circuit pattern formed on the first surface of the wiring substrate. A connected semiconductor device, a plurality of via holes for electrically connecting the first surface and the second surface of the wiring board, connection conductors embedded in each of the via holes, and a second surface of the wiring board And a metal ball made of a high-temperature solder for connection to a circuit board arranged to be planar with respect to the second surface with predetermined dimensions, and the via hole is provided on the first side of the wiring board. A semiconductor device, which is arranged so as to correspond to each of a plurality of wiring electrodes formed on a surface, and wherein the metal balls made of the high-temperature solder are arranged immediately below each of the connection conductors embedded in the via holes. 2. The semiconductor device according to claim 1, wherein the connection conductor is made of a material having good heat conductivity. 3. The semiconductor device according to claim 1, wherein the connection conductor is made of solder. 4. The semiconductor device according to claim 1, wherein the metal ball and the connection conductor made of high-temperature solder are made of the same material solder. 5. The wiring board according to claim 1, wherein the wiring board is made of ceramic.
13. The semiconductor device according to claim 1. 6. The semiconductor device according to claim 1, wherein the metal ball and the connection conductor made of high-temperature solder are made of the same material, and the melting points of the solders are different.