JPH10189680A - Semiconductor device manufacturing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To realize a semiconductor device manufacturing apparatus which is capable of transferring semiconductor devices in a shorter time by a method wherein the manufacturing apparatus is equipped with transfer arms as many as chambers and load locks, where the transfer arms transfer semiconductor devices and are disposed corresponding to the chambers and the load locks. SOLUTION: Gate valves which connect a main frame, chambers A and B, and a load lock L/L are opened at the same time. A first wafer inside the chamber A, a second wafer inside the chamber B, and a third wafer inside the load lock L/L are unloaded by transfer arms 12a, 12b, and 12c respectively at the same time. Then, a fourth wafer, a fifth wafer, and a sixth wafer are loaded into the chamber B, the load lock L/L, and the chamber A with the transfer arms 12a, 12b, and 12c respectively at the same time. The gate valves of the chambers A and B and the load lock L/L are closed at the same time. By this setup, a semiconductor device manufacturing apparatus of this constitution can be shortened in transfer time, improved in throughput, and lessened in manufacturing time.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a multi-chamber type semiconductor device manufacturing apparatus capable of individually dividing each chamber in an apparatus for manufacturing a semiconductor device.

[0002]

2. Description of the Related Art FIG. 4 is a plan view showing an example of a conventional multi-chamber type semiconductor device manufacturing apparatus. The semiconductor device manufacturing apparatus 1 is a parallel-plate type semiconductor device manufacturing apparatus in which a single transfer arm 2 that can expand and contract in a direction indicated by an arrow a rotates in a direction indicated by an arrow b in the center of a transfer chamber 3. Mounted as possible. Then, the load lock L / L, which is the apparatus entrance, and the two chambers ChA and Ch
B are provided so as to face each other across the transfer chamber 3.

An operation example of such a configuration will be described with reference to FIG. FIG. 5 shows each chamber ChA, C
hB and load lock L / L respectively
2, W3 is housed, and the wafer W2 present in the chamber ChB is moved to the load lock L / L and collected.
The procedure (S1 to S18) of the operation of moving the unprocessed wafer W3 existing in the load lock L / L to the chamber ChA and moving the wafer W1 existing in the chamber ChA to the chamber ChB will be described.

S1. The gate valve connecting the main frame and the chamber ChB is opened. S2. The wafer W2 in the chamber ChB is unloaded by the transfer arm 2. S3. The gate valve of the chamber ChB is closed. S4. Open the gate valve connecting the mainframe and the load lock L / L. S5. The wafer W2 is stored in the load lock L / L by the transfer arm 2. S6. Close the load lock L / L gate valve.

S7. The gate valve connecting the main frame and the chamber ChA is opened. S8. The wafer W1 in the chamber ChA is carried out by the transfer arm 2. S9. The gate valve of the chamber ChA is closed. SlO. The gate valve of the chamber ChB is opened. Sll. The wafer W1 is stored in the chamber ChB by the transfer arm 2. Sl2. The gate valve of the chamber ChB is closed.

Sl3. Open the gate valve of the load lock L / L. Sl4. The wafer W3 in the load lock L / L is unloaded by the transfer arm 2. S15. Close the load lock L / L gate valve. Sl6. The gate valve of the chamber ChB is opened. S17. The wafer W3 is stored in the chamber ChB by the transfer arm 2. S18. The gate valve of the chamber ChB is closed. As described above, in the conventional multi-chamber type semiconductor device manufacturing apparatus 1, the above-described step 18 is required.

[0007]

In the conventional multi-chamber type semiconductor device manufacturing apparatus 1 described above, the moving speed of the robot is increased or the accuracy of the moving distance in the transfer is increased to increase the transfer speed and improve the throughput. But
Nevertheless, in the above process, it took 90 seconds or more only for the conveyance. Therefore, when the semiconductor device manufacturing apparatus 1 performs sputtering or chemical vapor deposition (CVD), for example,
If the processing time of a wafer in one chamber is about 60 seconds and does not exceed the above-mentioned transfer time, the transfer will limit the throughput, and the manufacturing time required for one product will be extra. There was a problem of becoming.

SUMMARY OF THE INVENTION In view of the foregoing, it is an object of the present invention to provide a semiconductor device manufacturing apparatus capable of shortening a transfer time in a multi-chamber system.

[0009]

According to the present invention, there is provided a multi-chamber type semiconductor device manufacturing apparatus, wherein the same number of transfer arms for transferring the semiconductor device as the number of chambers and load locks are provided. Is achieved by

According to the above configuration, since the transfer arm corresponding to each chamber and the load lock is provided, the semiconductor device can be transferred at a higher throughput, and the production capacity of the device can be improved. .

[0011]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of the present invention will be described below in detail with reference to the accompanying drawings. The embodiments described below are preferred specific examples of the present invention,
Although various technically preferred limitations are given, the scope of the present invention is not limited to these forms unless otherwise specified in the following description.

FIG. 1 is a plan view showing a first embodiment of a semiconductor device manufacturing apparatus according to the present invention. The semiconductor device manufacturing apparatus 11 is a parallel plate type semiconductor device manufacturing apparatus, and includes three extensible transfer arms 12a, 12b, 1
2c are rotatably mounted at the center of the transfer chamber 13, respectively. A load lock L / L, which is an entrance of the apparatus, and two chambers ChA and ChB are provided so as to face each other with the transfer chamber 13 interposed therebetween.

An operation example of such a configuration will be described. In this example, the wafers W1, W2, and W3 are accommodated in the respective chambers ChA and ChB and the load lock L / L, respectively, and the wafer W1 existing in the chamber ChA is provided.
Is moved to the chamber ChB, the wafer W2 existing in the chamber ChB is moved to the load lock L / L and collected, and the unprocessed wafer W3 existing in the load lock L / L is collected.
(S) for the operation of moving the gas to the chamber ChA
1 to S4).

Sl. Main frame and each chamber Ch
The gate valves connecting A, ChB and the load lock L / L are simultaneously opened. S2. The transfer arm 12a transfers the wafer W1 in the chamber ChA, and the transfer arm 12b transfers the wafer W2 in the chamber ChB.
The wafer W3 in the load lock L / L is simultaneously unloaded by c. S3. Chamber Ch by the transfer arm 12a
The wafer W1 is stored in B, the wafer W2 is loaded in the load lock L / L by the transfer arm 12b, and the wafer W3 is loaded in the chamber ChA by the transfer arm 12c. S4.
The gate valves of the chambers ChA and ChB and the load lock L / L are simultaneously closed.

As described above, in the multi-chamber type semiconductor device manufacturing apparatus 11 of this embodiment, since only the above four steps are required, the transfer can be completed in about 20 seconds. In addition, since wafer processing is performed simultaneously in all chambers, the processing time in the chamber requiring the longest processing time in all chambers determines the processing time in other chambers. Therefore, when the processing time of the wafer is, for example, about 40 seconds in the chamber ChA and about 30 seconds in the chamber ChB, the conventional semiconductor device manufacturing apparatus 1 requires about 90 seconds for the transfer, so that one wafer is manufactured. Is 90 seconds, but in the semiconductor device manufacturing apparatus 11 of this embodiment, the transfer is about 20 seconds, so the time required to manufacture one wafer is 40 seconds +
20 seconds = 60 seconds.

As described above, in the semiconductor device manufacturing apparatus 11 of the multi-chamber system according to this embodiment, the two mounted chambers ChA and ChB and one load lock L / L
Since the transfer is performed at once using the same three transfer arms 12a, 12b, and 12c,
Only the steps are required, and the time required for transport can be reduced. Accordingly, a semiconductor device manufacturing apparatus equipped with a plurality of chambers and load locks, for example, three chambers ChA, ChB, ChC and 1 as in the second embodiment shown in FIG.
A semiconductor device manufacturing apparatus 21 equipped with two load locks L / L, and two chambers ChA and ChB and two load locks L / LA and L as in the third embodiment shown in FIG.
In the case of the semiconductor device manufacturing apparatus 31 equipped with / LB, 4
What is necessary is just to provide the arm 22a, 22b, 22c, 22d for a book or 32a, 32b, 32c, 32d.

A case in which a thin film for wiring of a semiconductor device is formed by a sputtering method using a second embodiment of the semiconductor device manufacturing apparatus of the present invention shown in FIG. 2 will be described. Here, as the wiring, TiN / Al-0.5% Cu
/ Ti (100 nm / 500 nm / 50 nm). In this example, each chamber ChA, ChB,
Wafers W1 and ChC and load locks L / L, respectively.
W2, W3 and W4 are housed, Ti is deposited in the chamber ChA, and AL-0.5% C is deposited in the chamber ChB.
u is formed, and TiN is formed in the chamber ChC.

Then, the wafer W1 existing in the chamber ChA is moved to the chamber ChB, the wafer W2 existing in the chamber ChB is moved to the chamber ChC, and the wafer W3 existing in the chamber ChC is moved to the load lock L / L. The unprocessed wafer W4 that has been collected and is present in the load lock L / L is moved to the chamber ChA.

T in each chamber ChA, ChB, ChC
The film forming conditions and film forming conditions for i, Al-0.5% Cu, and TiN are as follows. Chamber ChA: Ti film thickness 600 nm, Sp. Pow
er3 kW, Ar 75 sccm, Sp. Temp150
° C, processing time 30 seconds Chamber ChB: Al-0.5% Cu film thickness 500n
m, Sp. Power13kW, Ar48sccm, S
p. Temp 300 ° C., processing time 30 seconds Chamber ChC: TiN film thickness 100 nm, Sp. Po
war8kW, Ar / N2 = 20 / 60sccm, S
p. Temp 200 ° C, processing time 40 seconds

Sl. Each chamber ChA, ChB, ChC
At the same time, and after the processing in the chambers ChA and ChB is completed, the wafers W1 and W2 in the chambers ChA and ChB wait until the processing in the chamber ChC is completed. S2. Main frame and each chamber ChA, ChB, C
Open the gate valve connecting the hC and the load lock L / L at the same time. S3. The wafer W1 in the chamber ChA is transferred by the transfer arm 22a to the chamber ChB by the transfer arm 22b.
The wafer W2 in the chamber ChC is unloaded at the same time by the transfer arm 22c, and the wafer W4 in the load lock L / L is unloaded by the transfer arm 22d.

S4. The transfer arm 22a transfers the wafer W1 to the chamber ChB, the transfer arm 22b transfers the wafer W2 to the chamber ChC, the transfer arm 22c transfers the wafer W3 to the load lock L / L, and the transfer arm 22c.
The wafer W4 is simultaneously stored in the chamber ChA by d. S5. The gate valves of the chambers ChA, ChB, ChC and the load lock L / L are simultaneously closed. By the above operation, the manufacturing time per wafer is 60
Seconds.

A case where a thin film for wiring of a semiconductor device is formed by a CVD method using a third embodiment of the semiconductor device manufacturing apparatus of the present invention shown in FIG. 3 will be described. Here, it is assumed that W (600 nm) is formed as the wiring, and in this example, the wafers W1 and W are respectively provided in the chambers ChA and ChB and the load locks L / LA and L / LB.
2, W3 and W4 are accommodated, and each chamber ChA,
W is deposited on ChB.

Then, the wafer W1 existing in the chamber ChA is moved to the load lock L / LA and collected, and the wafer W2 existing in the chamber ChB is loaded in the load lock L / L.
B, the wafer W3 in the load lock L / LA is moved to the chamber ChA, and the wafer W4 in the load lock L / LB is moved to the chamber ChB.

The film forming conditions and the film forming time in each chamber ChA and ChB are as follows. Chamber ChA: W film thickness 600 nm, WF6 / H2 /
Ar = 75/500 / 2800scm, Pressur
e 10640 Pa, temperature 450 ° C., stay time 50 seconds Chamber ChB: W film thickness 600 nm, WF6 / H2 /
Ar = 75/500 / 2800scm, Pressur
e10640Pa, temperature 450 ° C, stay time 50 seconds

Sl. The processing in each of the chambers ChA and ChB starts simultaneously and ends at the same time. S2. The gate valves connecting the main frame to the chambers ChA and ChB and the load locks L / LA and L / LB are opened simultaneously. S3. The wafer W1 in the chamber ChA is transferred by the transfer arm 32a to the chamber ChB by the transfer arm 32b.
The wafer W2 in the load lock L / LA is unloaded simultaneously by the transfer arm 32c, and the wafer W4 in the load lock L / LB is unloaded by the transfer arm 32d.

S4. The transfer arm 32a transfers the wafer W1 to the load lock L / LA, the transfer arm 32b transfers the wafer W2 to the load lock L / LB, the transfer arm 32c transfers the wafer W3 to the chamber ChA, and the transfer arm 32d transfers the wafer W3 to the chamber ChB. The wafer W4 is stored at the same time. S5. Each chamber ChA, ChB and each load lock L
/ LA and L / LB gate valves are simultaneously closed. By the above operation, the manufacturing time per wafer is 70
Seconds.

In the multi-chamber type semiconductor device manufacturing apparatuses 11, 21 and 31 of the above-described embodiments, the transfer time can be shortened to improve the throughput, and the time required to manufacture one product can be shortened. it can.

[0028]

As described above, according to the present invention, the transfer time in the multi-chamber system can be shortened.

[Brief description of the drawings]

FIG. 1 is a plan view showing a first embodiment of a semiconductor device manufacturing apparatus of the present invention.

FIG. 2 is a plan view showing a second embodiment of the semiconductor device manufacturing apparatus of the present invention.

FIG. 3 is a plan view showing a third embodiment of the semiconductor device manufacturing apparatus of the present invention.

FIG. 4 is a plan view showing an example of a conventional semiconductor device manufacturing apparatus.

FIG. 5 is a plan view showing an operation example of the semiconductor device manufacturing apparatus of FIG. 4;

[Explanation of symbols]

11, 21, 31... Semiconductor device manufacturing apparatus, 12a,
12b, 12c, 22a, 22b, 22c, 22d, 3
2a, 32b, 32c, 32d: Transfer arm, C
hA, ChB, ChC ... chamber, L / L, L / L
A, L / LB ... load lock

Claims (3)

[Claims] 1. An apparatus for manufacturing a semiconductor device of a multi-chamber system, wherein the same number of transfer arms for transferring the semiconductor device as the number of chambers and load locks are provided. 2. The semiconductor device manufacturing apparatus according to claim 1, wherein the transfer by the transfer arms is performed simultaneously. 3. The semiconductor device according to claim 1, wherein a gate valve connecting the main frame to each of the chambers and the load lock is opened at the same time, the transfer by the transfer arms is performed at the same time, and the gate valve is closed at the same time. Manufacturing equipment.