JPH10183096A - Adhesive, semiconductor device prepared by using the same, and production thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain an adhesive which is excellent in heat resistance, resistance to reflow cracks, etc., and also in productivity by dissolving a polyimide resin having specified physical properties and a structure in a solvent. SOLUTION: This adhesive is prepd. by dissolving a polyimide resin having a glass transition point of 80-200 deg.C, a melt viscosity at 300 deg.C of 200-10,000Pa.s, and repeating units represented by formula I (wherein R<1> is a divalent org. group; and (m) is 2-20) in a solvent. A polyimide resin having 40-90mol% repeating units represented by formula I and 5-20mol% repeating units represented by formula II (wherein R<2> is a divalent org. group; and (n) is 4-12) may be used for obtaining an adhesive improved in solvent solubility, resistance to reflow cracks, and adhesiveness. A polyimide resin soln. obtd. when the resin is synthesized may be used as it is as the adhesive, or the adhesive may be prepd. by isolating the resin from the soln. and dissolving it in a solvent.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to an adhesive, a semiconductor device using the same, and a method of manufacturing the same.

[0002]

2. Description of the Related Art In recent years, there has been an increasing demand for reliability of semiconductor devices such as ICs. On the other hand, as packages are becoming thinner and smaller, they are mounted on substrates by the so-called surface mounting method. However, since infrared reflow furnaces are used, the heat load on semiconductor devices is even more severe. It has become. From such a situation, the moisture absorbed inside the semiconductor device in the reflow furnace at the time of mounting expands, peels off the sealing material, and causes cracks in the semiconductor device (hereinafter, referred to as “the semiconductor device”).
The phenomenon is expressed as reflow crack).

In an IC manufacturing process, a semiconductor element is bonded to a so-called die pad, which is a part of a lead frame, by using an adhesive to hold and fix the semiconductor element (hereinafter, this step is referred to as die bonding). ). In a subsequent step, the semiconductor element is electrically connected to the lead frame (wire bonding step). At this time, since the semiconductor element is connected with a gold wire, the semiconductor element is generally heated to a temperature close to 300 ° C.

As an adhesive for die bonding, an adhesive (die bonding material) such as a so-called silver paste in which a thermosetting epoxy resin is filled with a filler such as silver powder is widely used. These die bonding materials are widely used because they are liquid and easy to apply, and form an adhesive layer having excellent heat resistance in a short time.

However, the epoxy resin-based die bonding material generates a large amount of volatile components and thermal decomposition gas during curing, and contaminates the periphery of the chip, deteriorating the adhesion with the sealing material, and the amount of water absorbed by the adhesive. However, there is a problem that reflow cracks are easily caused. In particular, when the size of the chip used increases, reflow cracks are more likely to occur due to an increase in water absorption and an increase in thermal stress accompanying curing shrinkage.

On the other hand, aromatic polyimides are used in various forms in semiconductor devices because of their excellent heat resistance and electrical characteristics. Have also been studied in various ways. However, conventional aromatic polyimides with high heat resistance do not dissolve in general-purpose solvents, so they are applied in the form of polyamic acid and imidized over a long period of time, or the polyimide once processed into a film is bonded to the chip. In addition, it is necessary to adhere to the lead frame, so that the process becomes complicated and the productivity is inferior.In addition, since a very high processing temperature exceeding the temperature of the wire bonding process is required, it is difficult to deteriorate by oxidation such as a copper frame. There is a problem that it cannot be used with a weak metal frame.

[0007]

As described above, epoxy resins conventionally used as die bonding materials have problems in heat resistance, resistance to reflow cracks, and the like, and aromatic polyimides have poor productivity. There were problems such as low and high processing temperatures. The present invention solves these problems.

That is, the first aspect of the present invention provides an adhesive suitable for a semiconductor device which is excellent in properties such as heat resistance and resistance to reflow cracks and is excellent in productivity. According to a second aspect of the present invention, there is provided an adhesive suitable for a semiconductor device which exhibits more excellent resistance to reflow cracks and the like in addition to the effects of the first aspect of the invention. According to a third aspect of the present invention, there is provided an adhesive suitable for a semiconductor device, which exhibits excellent resistance to reflow cracks and the like in addition to the effects of the second aspect of the invention. According to a fourth aspect of the present invention, there is provided an adhesive suitable for a semiconductor device, which exhibits excellent resistance to reflow cracks and the like in addition to the effects of the third aspect of the invention. The invention according to claim 5 provides a semiconductor device having high resistance to reflow cracks. The invention according to claim 6 provides the effect of the invention according to claim 5,
Further, by bonding the semiconductor device to the metal frame in a specific form, a semiconductor device having higher resistance to reflow cracks is provided. The invention according to claim 7 provides a method for manufacturing a semiconductor device having high resistance to reflow cracks with excellent productivity without requiring a high processing temperature.

[0009]

According to the present invention, there is provided an adhesive obtained by dissolving a polyimide resin having a glass transition temperature of 80 to 200 ° C. and a melt viscosity at 300 ° C. of 200 to 10,000 Pa · s in a solvent. Agent.

[0010] The present invention also provides the polyimide resin,
General formula (I)

Embedded image (Wherein, R ¹ represents a divalent organic group, and m represents an integer of 2 to 20). The present invention relates to an adhesive which is a polyimide resin having a repeating unit represented by the following formula:

Further, according to the present invention, there is provided a method wherein the polyimide resin comprises a repeating unit represented by the general formula (I):

Embedded image (Wherein, R ² represents a divalent organic group, and n represents an integer of 4 to 12), which relates to an adhesive which is a polyimide resin having a repeating unit represented by the following formula:

In the present invention, the amount of the repeating unit represented by the general formula (I) is 40 to 90 mol% of the total amount of the repeating unit of the polyimide resin, and the amount of the repeating unit represented by the general formula (II) is Is 5 to 20 mol% of the total repeating unit of the polyimide resin.

[0013] The present invention also relates to a semiconductor device having a structure in which a metal frame and a semiconductor element are bonded using the adhesive. Further, the present invention provides, as the metal frame,
The present invention relates to a semiconductor device having a shape in which a part of a semiconductor element is exposed on an adhesive surface. Furthermore, the present invention relates to a method of manufacturing a semiconductor device, characterized in that the adhesive is applied to a metal frame or a bonding surface of a semiconductor element to bond the semiconductor element, and then wire-bonded and sealed with a resin.

[0014]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The polyimide resin used in the adhesive of the present invention has a glass transition temperature (hereinafter referred to as Tg) of 80 to 200 ° C. and a melt viscosity at 300 ° C. of 2.
It is from 00 to 10,000 Pa · s and is essentially thermoplastic. Here, Tg refers to a value measured by a DSC (differential scanning calorimeter) at a heating rate of 10 ° C./min. If the Tg is less than 80 ° C., the adhesive strength at a high temperature is insufficient, the water absorption increases, and reflow cracks occur. On the other hand, when Tg exceeds 200 ° C., a high bonding temperature exceeding 300 ° C. is required to obtain a sufficient adhesive strength. In light of these balances, Tg is preferably from 80 to 150 ° C, and from 100 to 150 ° C.
150 ° C. is more preferred.

The melt viscosity at 300 ° C. is 200
If the pressure is less than Pa · s, the adhesive may flow out in the die bonding or wire bonding step and contaminate the heating stage. In addition, problems such as movement of the chip in the wire bonding step may occur. Meanwhile, 10,
If it exceeds 000 Pa · s, the cohesive strength becomes too high and a sufficient adhesive strength cannot be obtained. In light of these balances, the melt viscosity is preferably from 500 to 10,000 Pa · s, and
8,000 Pa · s is more preferable.

As the polyimide resin having the above characteristics, for example, there is a polyimide resin having a repeating unit represented by the above general formula (I).
Tg can be set to the above range without impairing the heat resistance of the polyimide resin, and good reflow crack resistance can be obtained, which is preferable. In order to have such a repeating unit, the compound represented by the general formula (III)

Embedded image (Wherein m represents an integer of 2 to 20) may be used as the acid component.

Such tetracarboxylic dianhydrides include 1,2- (ethylene) bis (trimellitate dianhydride), 1,3- (trimethylene) bis (trimellitate dianhydride), 1,4- ( Tetramethylene) bis (trimellitate dianhydride), 1,5- (pentamethylene) bis (trimellitate dianhydride), 1,6- (hexamethylene) bis (trimellitate dianhydride), 1,7- (heptamethylene ) Bis (trimellitate dianhydride), 1,
8- (octamethylene) bis (trimellitate dianhydride), 1,9- (nonamethylene) bis (trimellitate dianhydride), 1,10- (decamethylene) bis (trimellitate dianhydride), 1,12- (dodeca) Methylene) bis (trimellitate dianhydride), 1,16- (hexadecamethylene) bis (trimellitate dianhydride), 1,1
8- (octadecamethylene) bis (trimellitate dianhydride) and the like may be used in combination. These are preferably used in an amount of 40 to 100 mol% based on the total amount of the carboxylic acid component used in the polyimide resin because of excellent reflow crack resistance, and more preferably 40 to 95 mol%. That is, the amount of the repeating unit represented by the general formula (I) is preferably 40 to 100 mol%, more preferably 40 to 95 mol%, based on the total amount of the repeating unit of the polyimide resin. Here, the repeating unit refers to a unit of a chain of one molecule of diamine and one molecule of tetracarboxylic acid or dicarboxylic acid in the polyimide resin.

Furthermore, when the polyimide resin has a repeating unit represented by the general formula (I) and a repeating unit represented by the general formula (II), the solvent solubility of the polyimide is improved. In addition, Tg can be reduced, and reflow crack resistance and adhesiveness are further excellent, which is preferable.

In order to have a repeating unit represented by the general formula (II), the compound represented by the general formula (IV)

Embedded image (Wherein, n represents an integer of 4 to 12) may be used as a part of the acid component.

Such dicarboxylic acids include adipic acid (n = 4), pimelic acid (n = 5), suberic acid (n = 6), azelaic acid (n = 7), and sebacic acid (n
= 8), dodecane diacid (n = 12) and the like. These may be used in combination of two or more. They are,
It is preferable to use 5 to 20 mol% with respect to the total amount of the carboxylic acid component used in the polyimide resin because of excellent reflow crack resistance, and it is more preferable to use 8 to 15 mol%. That is, the content of the repeating unit represented by the general formula (II) is preferably 5 to 20 mol%, more preferably 8 to 15 mol%, based on the total amount of the repeating units of the polyimide resin.

Further, carboxylic acid components other than those described above can be used in combination.
4'-tetracarboxybenzophenone, bis (3,4
-Dicarboxyphenyl) dimethylsilane, 1,2,2
3,4-butanetetracarboxylic acid, bis (exo-bicyclo [2,2,1] heptane-2,3-dicarboxylic acid)
Sulfone, 2,2-bis (3,4-dicarboxyphenoxyphenyl) hexafluoropropane, 1,3-bis (2-hydroxyhexafluoroisopropyl) benzenebis (trimellitic acid), pyromellitic acid, 3,
3 ', 4,4'-biphenyltetracarboxylic acid, 2,
3,3 ', 4'-bensophenonetetracarboxylic acid,
2,3,6,7-tetracarboxynaphthalene, 2,
2′-bis (3,4-dicarboxyphenylpropane,
3,4,9,10-perylenetetracarboxylic acid, benzene-1,2,3,4-tetracarboxylic acid, 2,6-dichloronaphthalene-1,4,5,8-tetracarboxylic acid,
Tetracarboxylic dianhydrides such as pyrrolidine-2,3,4,5, -tetracarboxylic acid can be mentioned as preferred. Among them, 3,3 ', 4,4'-tetracarboxybenzophenone, bis (3,4-dicarboxyphenyl) dimethylsilane, 2,2-bis (3,4
(Dicarboxyphenoxyphenyl) hexafluoropropane and the like are preferable because of a high effect of lowering the Tg of the obtained resin.

The divalent organic group represented by R in the structure represented by the general formula (I) or (II) is a group derived from a diamine component, and the Tg of the polyimide resin of the present invention.
And the melt viscosity is selected. Examples of the diamine include 2,2-bis (3-aminophenyl) propane, 2,2-bis (4- (4-aminophenoxy) phenyl) propane, 1,6-diaminohexane, and 1,12.
Α, ω-diaminoalkanes such as diaminododecane,
m-xylylenediamine, 2,2-bis (3-aminophenyl) hexafluoropropane, 1,1-bis (4-
(4-aminophenoxy) phenyl) cyclohexane,
1,3-bis (3-aminopropyl) tetramethyldisiloxane, o-phenylenediamine, 3,3'-diaminodiphenylether, 3,3'-diaminodiphenyldifluoromethane, 3,3'-diaminodiphenylmethane, 3,3 '-Diaminodiphenyl sulfone, 3,3'
-Diaminodiphenyl ketone and the like can be used. Among these, 1,12-diaminododecane,
3,3'-diaminodiphenyl ether, 3,3'-diaminodiphenylmethane, and the like are preferable because the effect of lowering the Tg of the obtained resin is high.

As the raw material of the polyimide resin used in the present invention, the above-mentioned tetracarboxylic dianhydride and diamine, and further, if necessary, dicarboxylic acid are used. In general, the ratio of carboxylic acid to amine is such that one is the other. 1 for
It is preferably used within a range of 0 mol% excess, and most preferably used in an equivalent amount. Further, as a raw material, an acid component such as tetracarboxylic acid itself, a lower alcohol ester derived therefrom, an acid halide, an isocyanate compound capable of deriving a corresponding amine as an amine component, and a lower carboxylic acid amide can also be used. .

As a method for synthesizing the polyimide, a solvent capable of dissolving the polyimide resin of the present invention, for example, having a boiling point of 1
In a solvent such as N-methylpyrrolidone at 50 ° C. or higher, a method is used in which a carboxylic anhydride and an amine are reacted at room temperature to synthesize a polyamic acid as a precursor, and further heated to dehydrate and close the ring. . Further, it is also possible to use a synthesis method such as a method of dehydrating and ring-closing using an acid anhydride such as acetic anhydride or a method of reacting an acid anhydride with an isocyanate.

When a dicarboxylic acid is used in combination, as a method of adding the dicarboxylic acid, a polyamide having an amino terminal is synthesized by reacting a dicarboxylic acid and a diamine in excess of an amine in advance, and this can be added as a part of the diamine. . Heating the precursor polyamic acid to effect dehydration ring closure can be performed by a method of heat treatment at 120 to 250 ° C. or a chemical method. In the case of the heat treatment method, the heat treatment can be usually performed while removing the water generated by the dehydration reaction out of the system.

In the polyimide resin used in the present invention, it is preferable that all the repeating units are dehydrated and ring-closed to form an imidized compound. However, as long as the resin physical properties are satisfied, the repeating units of a polyamic acid or a derivative thereof may be used. It may remain. In this case, the content is preferably 20% by mole or less based on the total amount of the polyimide resin. When the number of repeating units of the polyamic acid or its derivative exceeds this, the adhesive strength tends to decrease, and the water absorption tends to increase.

The solvent for dissolving the above-mentioned polyimide resin is not particularly limited as long as the solvent can dissolve the resin and evaporate after coating. For example, N-methylpyrrolidone, dimethylacetamide, dimethylsulfoxide, dioxane, diglyme and the like can be mentioned. These are 10 to 70% by weight in that a good adhesive layer can be formed with respect to the total amount of the polyimide resin.
Is preferably set to 20 to 50% by weight.

The amount of the repeating unit represented by the general formula (I) is from 40 to 90 mol% of the total amount of the repeating unit.
The polyimide resin in which the amount of the repeating unit represented by the general formula (II) is 5 to 20 mol% of the total amount of the repeating unit can be dissolved in a general-purpose solvent such as cyclohexanone, xylene, and THF. This is preferable because it can reduce the influence on the adhesive, can improve the solvent solubility of polyimide, can increase the solid content, and can shorten the drying time of the adhesive, so that higher productivity can be obtained.

As a method for obtaining the adhesive, the solution of the polyimide resin obtained at the time of synthesis may be used as the adhesive as it is, or the solution is poured into a poor solvent for polyimide, such as methanol or water. Then, the polyimide resin may be once isolated and then dissolved in the solvent again. If necessary, commonly used additives such as a silane coupling agent, a titanium coupling agent, and a metal acetylacetone complex may be added for the purpose of improving the adhesive strength of the adhesive at room temperature. Further, in order to further improve heat resistance, adhesiveness, etc., an epoxy resin or the like may be used in combination.
It is preferred that the content be not more than% by weight in view of reflow crack resistance and the like.

In the method of manufacturing a semiconductor device using the adhesive obtained as described above, the adhesive is applied in advance by applying the adhesive to the bonding surface of a semiconductor element such as a silicon wafer or a metal frame and evaporating the solvent. Heating during die bonding can be performed in a very short time. The heating temperature is preferably 150 to 350 ° C. in terms of the balance between the adhesive strength and the oxidation of the frame. Further, as a method of using the adhesive without applying it to a frame or the like in advance, using a device in which an adhesive dispensing device and a die bonding device are arranged in-line, dispensing the adhesive on a metal frame, It is preferable to provide a heating step for evaporating the solvent during the die bonding step because productivity equal to or higher than that of the silver paste can be realized.

FIG. 1 is a plan view (a, b, c) and a perspective view (d) showing the tab shape of the metal frame used in the present invention and the bonding state of the semiconductor device, as viewed from the metal frame side. As the metal frame, a tab-shaped frame (a, b, d in FIG. 1) in which the bonding area is small and a part of the semiconductor element is exposed on the bonding surface side with the metal frame is preferable. a and b are plan views from the metal frame side in a state where the metal frame 1 and the silicon chip 2 are bonded, and it can be seen that a part of the semiconductor element is exposed on the bonding surface side with the metal frame. . Generally, since the adhesive strength between the semiconductor element and the sealing resin is higher than that between the metal frame and the sealing resin, when the back surface of the semiconductor element is exposed as described above, it is necessary to suppress the reflow crack due to the expansion of moisture. Can be. Further, in the above-mentioned shape, the bonding area between the metal frame and the semiconductor element can be reduced, so that the amount of the adhesive itself that easily absorbs water and the bonding portion where stress is concentrated can be reduced, and the reflow crack resistance can be improved. In FIG. 1C, a metal frame is used in which the semiconductor element is not exposed at all on the side of the bonding surface with the metal frame.

In order to prevent the semiconductor element from moving due to heating in the wire bonding step, the metal frame has a shape capable of sucking chips from the lower surface of the metal frame, as shown in FIG.
D (FIG. 1)
(It is a perspective view showing a mode in which the silicon chip is held down.) As shown in FIG. Thereafter, the semiconductor device of the present invention can be obtained through a normal wire bonding step and a sealing step using a sealing resin.

[0033]

The present invention will be described below in detail with reference to examples. Synthesis Example 1 Synthesis of Polyamide 180.0 g of water-free N-methylpyrrolidone and 120.0 g of xylene were put into a reactor equipped with a heating / cooling device, a stirring device, and a reflux device, and dried 2,2-
123.0 g of bis (4- (4-aminophenoxy) phenyl) propane (hereinafter referred to as BAPP) and 40.4 g of sebacic acid were added. The mixture was heated to 100 ° C. and reacted for 2 hours.
The polyamide solution was obtained by reacting at 0 ° C. for 3 hours. The solid content of the solution is 50% by weight, and the amino group equivalent of the polyamide calculated from the amino group content of the solution and the solid content is 80%.
It was 0 g / eq.

Synthesis Example 2 Synthesis of Polyimide a 441.2 g of water-free N-methylpyrrolidone was placed in a reactor equipped with a heating / cooling device, a stirring device and a reflux device, and 34.9 g of dried diamine (BAPP) was added thereto. And the polyamide solution 1 synthesized in Synthesis Example 1
6.0 g were added. 47. Further dried decamethylene bistrimellitate anhydride (hereinafter referred to as DBTA)
0 g was added to the reactor while cooling the reactor to 20 ° C. or lower, and reacted for 4 hours to obtain a polyamic acid solution. This was heated to 180 ° C., the reflux device was kept at 120 ° C., and the mixture was reacted for 3 hours to obtain a polyimide solution. The solution was poured into stirred water to precipitate a polyimide, which was further dried at 80 ° C. under reduced pressure to obtain polyimide a. The glass transition temperature of the obtained polyimide a was 118 ° C., and the melt viscosity at 300 ° C. was 1,200 Pa · s. The carboxylic acid component constituting the obtained polyimide a was analyzed by ¹³ C-NMR to prepare a calibration curve and quantitatively determine carbonyl carbon (hereinafter, analyzed by the same method).
Sebacic acid was 10 mol%. The melt viscosity was measured at a shear rate of 10 ³ sec to ¹ using a flow tester.

Synthesis Example 3 Synthesis of polyimide b As materials, N-methylpyrrolidone 502.6 g,
Polyimide b was obtained in the same manner as in Synthesis Example 2 except that 24.8 g of 3'-diaminodiphenylsulfone and 31.0 g of 2,3,3 ', 4'-tetracarboxydiphenyl ether were used. The glass transition temperature of the obtained polyimide is 242 ° C., and the melt viscosity at 300 ° C. is 24.0 ° C.
It was 00 Pa · s.

Synthesis Example 4 Synthesis of Polyimide c As materials, N-methylpyrrolidone 370.0 g, BA
Polyimide c was obtained in the same manner as in Synthesis Example 2 except that 41.0 g of PP and 52.2 g of DBTA were used. The glass transition temperature of the obtained polyimide is 122 ° C. and 300 ° C.
Was 2,800 Pa · s. The carboxylic acid component constituting the obtained polyimide c was DBTA100
Mol%.

Synthesis Example 5 Synthesis of polyimide d: N-methylpyrrolidone 366.7 g, BA
PP 16.4 g, polyamide solution 6 synthesized in Synthesis Example 1
Polyimide d was obtained in the same manner as in Synthesis Example 2 except that 4.0 g and 31.3 g of DBTA were used as raw materials. The glass transition temperature of the obtained polyimide d was 108 ° C.
The melt viscosity at 00 ° C. was 20 Pa · s. The carboxylic acid component constituting the obtained polyimide d was 60 mol% of DBTA and 40 mol% of sebacic acid.

Synthesis Example 6 Synthesis of polyimide e As materials, N-methylpyrrolidone 441.2 g, BA
34.9 g of PP, polyamide solution 1 synthesized in Synthesis Example 1
6.0 g, DBTA 26.1 g and 2,3,3 ', 4'
-Polyimide e was obtained in the same manner as in Synthesis Example 2 except that 15.5 g of tetracarboxydiphenyl ether was used as a raw material. The glass transition temperature of the obtained polyimide e is 1
It was 48 ° C and the melt viscosity at 300 ° C was 2200 Pa · s. The carboxylic acid component constituting the obtained polyimide e contains 50 mol% of DBTA, 10 mol% of sebacic acid,
2,3,3 ', 4'-tetracarboxydiphenyl ether was 40 mol%.

Synthesis Example 7 Synthesis of Polyimide f N-methylpyrrolidone 441.2 g,
12.4 g of 4'-bis (4,4'-bisaminophenoxy) acetophenone, 14.4 g of BAPP, 16.0 g of the polyamide solution synthesized in Synthesis Example 1 and 41.
Polyimide f was obtained in the same manner as in Synthesis Example 2 except that 8 g was used as a raw material. The glass transition temperature of the obtained polyimide f was 135 ° C., and the melt viscosity at 300 ° C. was 300.
It was 0 Pa · s. The carboxylic acid component constituting the obtained polyimide f was 90 mol% of DBTA and 10 mol% of sebacic acid.

Examples 1 to 5 and Comparative Examples 1 to 3 (Adhesive) The obtained polyimide was dissolved at the nonvolatile content shown in Table 1 to produce an adhesive.

[0041]

[Table 1]

Examples 6 to 11 and Comparative Examples 4 to 6 (Semiconductor Device) A semiconductor device was manufactured using the above adhesive. FIG.
It is a conceptual diagram showing a part of manufacturing device of a semiconductor device used here. In FIG. 2, the metal frame 1 is moved to the position of the dispenser 4 by the transfer device 3 and is coated with the adhesive 5. The metal frame 1 to which the adhesive 5 has been applied further moves and is heated by the heating stage 6 to evaporate the solvent of the adhesive and form a polyimide layer. Next, the metal frame 1 is heated in a die bonder 8 having a heating stage 7, and the chip 2 is pressed against the metal frame 1 to perform die bonding. Next, the chip 2 and the lead of the metal frame 1 are wire-bonded by the wire bonder 9. At this time, the movement of the chips can be prevented by providing the suction device 11 on the heating stage 10 and sucking the chips 2.

Specifically, first, an adhesive was applied in the dispenser 4. At this time, the adhesion of the adhesive to the other parts of the frame 1 due to the stringing was evaluated. In the heating stage 6, the solvent is evaporated by heating at 200 ° C. for 20 seconds, further moved to the die bonder 8, heated to 280 ° C. in the heating stage 7, and the 5 mm square chip 2 is placed on the metal frame 1 on the heating stage. , 130g load 10
The chip 2 was adhered for 2 seconds. After performing this step 20 times, the contamination of the heating stage 7 was evaluated as ○ when no adhesion of the resin to the heating stage was visually observed, and as X when the adhesion was observed. Frame 1
The peel adhesive strength of the chip 2 and the chip 2 at room temperature was evaluated using a tension gauge, and the results are shown in Table 2. Adhesion at room temperature is 100
If it is less than g / chip, the chip may be peeled off during the movement.

Further, the metal frame 1 to which the chip 2 was bonded was wire-bonded while being heated to 320 ° C. in a wire bonder 9 provided with a suction device 11 on a heating stage 10. At this time, the bonding state of the wire was evaluated, and as the wire bondability, those having no displacement and peeling of the wire were shown as ○, and those having displacement and peeling of the wire were shown as x in Table 2. Subsequently, the assembled product was resin-sealed with a transfer mold device to manufacture a semiconductor device. As the sealing material, CE manufactured by Hitachi Chemical Co., Ltd.
L-9200 was used.

In order to evaluate the reflow crack resistance, the manufactured semiconductor device was absorbed at 85 ° C. and a humidity of 85%, and treated at 240 ° C. for 10 seconds in an infrared reflow furnace. The time during which the semiconductor device swelled to 10% or more or cracked was measured as the anti-reflow time. The results are shown in Tables 2 and 3.

[0046]

[Table 2]

[0047]

[Table 3]

[0048]

The adhesive according to claim 1 is excellent in properties such as heat resistance, resistance to reflow cracks and the like, and is also excellent in productivity, so that it is suitable for semiconductor devices. The adhesive according to the second aspect has the effect of the adhesive according to the first aspect, and further exhibits more excellent resistance to reflow cracks and the like. The adhesive according to the third aspect has the effect of the adhesive according to the second aspect, and exhibits excellent resistance to reflow cracks and the like. The adhesive according to the fourth aspect has the effect of the adhesive according to the third aspect, exhibits more excellent resistance to reflow cracks, and can increase the solid content, so that the drying time can be shortened and the productivity can be reduced. Can be enhanced. The semiconductor device according to claim 5 has high resistance to reflow cracks. The semiconductor device according to the sixth aspect has the effects of the semiconductor device according to the fifth aspect, and has higher resistance to reflow cracks by being adhered to a metal frame of a specific form. According to the method of manufacturing a semiconductor device according to the seventh aspect, a semiconductor device having high resistance to reflow cracks can be manufactured with excellent productivity without requiring a high processing temperature.

[Brief description of the drawings]

FIG. 1 is a plan view (a, b, c) and a perspective view (d) showing a tab shape of a metal frame used in the present invention and a bonding state of a semiconductor element as viewed from the metal frame side.

FIG. 2 is a conceptual diagram of a part of the manufacturing apparatus, showing an example of a semiconductor device manufacturing apparatus used in the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Metal frame 2 ... Chip 3 ... Conveying device 4 ... Dispenser 5 ... Adhesive 6 ... Heating stage 7 ... Heating stage 8 ... Die bonder 9 ... Wire bonder 10 ... Heating stage 11 ... Suction device

Claims (7)

[Claims] A glass transition temperature of 80 to 200 ° C. and a melt viscosity at 300 ° C. of 200 to 10,000.
Adhesive obtained by dissolving Pa · s polyimide resin in a solvent. 2. A polyimide resin having the general formula (I): (Wherein, R ¹ represents a divalent organic group, m is an integer of 2 to 20) The adhesive of claim 1 wherein the polyimide resin having a repeating unit represented by. 3. A polyimide resin comprising a repeating unit represented by the general formula (I) and a repeating unit represented by the general formula (II): (Wherein, R ² represents a divalent organic group, n is an integer of 4 to 12) The adhesive of claim 2 wherein the polyimide resin having a repeating unit represented by. 4. The amount of the repeating unit represented by the general formula (I) is 40 to 90 of the total amount of the repeating unit of the polyimide resin.
The adhesive according to claim 3, wherein the amount of the repeating unit represented by the general formula (II) is 5 to 20 mol% of the total amount of the repeating unit of the polyimide resin. 5. The semiconductor device according to claim 1, wherein the metal frame and the semiconductor element are provided.
A semiconductor device having a structure bonded using the adhesive described in 2, 3, or 4. 6. The semiconductor device according to claim 5, wherein the metal frame has a shape in which a part of the semiconductor element is exposed on the bonding surface. 7. Applying the adhesive according to claim 1, 2, 3, or 4 to the bonding surface of the metal frame or the semiconductor element to bond the semiconductor element, and thereafter performing wire bonding and sealing with a resin. A method for manufacturing a semiconductor device.