JPH06264035A - Adhesive film, its production, and method for adhesion - Google Patents

Abstract

PURPOSE:To prepare an adhesive film for die bonding which, like a conventional silver paste, enables the heat treatment in die bonding to be carried out at a relatively low temp. CONSTITUTION:This adhesive film contains 100 pts.wt. polyimide resin obtd. by reacting a diamine with a tetracarboxylic dianhydride component contg. at least 70mol% tetracarboxylic dianhydride of the formula (wherein (n) is an integer of 2-20), 1-200 pts.wt. epoxy resin, 0.02-240 pts.wt. phenol resin, 0.0001-100 pts.wt. cure accelerator, and 50-4,000 pts.wt. inorg. filler.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an adhesive film used as a bonding material for an IC or LSI and a lead frame, that is, a die bonding material, a method for producing the same, and an adhesive method.

[0002]

2. Description of the Related Art Conventionally, an Au-Si eutectic alloy, solder, silver paste, or the like has been used to bond an IC or LSI to a lead frame. The Au-Si eutectic alloy has high heat resistance and moisture resistance, but has a large elastic modulus and is easily cracked when applied to a large chip, and is expensive.
Although solder is inexpensive, it has poor heat resistance and has a high elastic modulus similar to Au-Si eutectic alloy, making it difficult to apply to large chips. On the other hand, silver paste is inexpensive, has high moisture resistance, has the lowest elastic modulus among the above three, and has heat resistance applicable to a thermocompression bonding wire bonder at 350 ° C. Has become the mainstream of joining materials. However, as ICs and LSIs have become highly integrated in recent years and the chips have become larger in size, when joining the ICs and LSIs with the lead frame with silver paste, the silver paste is spread over the entire surface of the chip and applied. Is difficult.

Microelectronic Manufacturing and Testing (MICROELECTRONIC
(MANUFACTURING AND TESTING, June 1988, p. 9)
Discloses an adhesive film for die bonding in which a thermoplastic resin is filled with a metal filler. In this method, the temperature is raised to near the melting point of the thermoplastic resin and pressure bonding is performed.

[0004]

The adhesive film disclosed in the above magazine has a low bonding temperature when a thermoplastic resin having a low melting point is used, and the damage to the chip such as oxidation of the lead frame is small. However, since it has low heat resistance, it cannot withstand heat treatment after die bonding, such as wire bonding and sealing. If a thermoplastic resin having a high melting point is used to withstand such heat treatment, the joining temperature becomes high, and there is a problem that the lead frame is damaged by oxidation or the like. It is an object of the present invention to provide an adhesive film for a die bond, which can be heat-treated at the time of die bonding at a relatively low temperature like a conventional silver paste.

[0005]

The present invention includes the following (1) to (1).
Regarding (3). (1) (A) The following chemical formula 2 [Formula (I)]

[Chemical 2] (However, n is an integer of 2 to 20.) Tetracarboxylic acid dianhydride represented by 70 mol% or more based on the total acid dianhydride is reacted with diamine. An adhesive film comprising a polyimide resin obtained by the above; (B) an epoxy resin; (C) a phenol resin; (D) a curing accelerator; and (E) an inorganic substance filler. (2) The tetracarboxylic dianhydride represented by formula (I) (A) is obtained by reacting a tetracarboxylic dianhydride containing 70 mol% or more with respect to the total acid dianhydride with a diamine. Polyimide resin, (B) epoxy resin; and (C) phenol resin; are dissolved in an organic solvent, and (D) a curing accelerator; and (E) an inorganic substance filler are added to and mixed with the base film. A method for producing an adhesive film, which comprises heating the composition after applying it to the. (3) A method of adhering a semiconductor element and a supporting member, in which the adhesive film of (1) above is sandwiched between the semiconductor element and the supporting member and thermocompression bonding is performed. The polyimide resin used in the present invention is

[Chemical 3] (However, n is an integer of 2 to 20.) Tetracarboxylic acid dianhydride represented by 70 mol% or more based on the total acid dianhydride is reacted with diamine. The polyimide-based resin obtained by the above is used.

The epoxy resin (B) used in the present invention contains at least two epoxy groups in the molecule, and a phenol glycidyl ether type epoxy resin is preferably used from the viewpoint of curability and cured product characteristics. Examples of such resins include bisphenol A and bisphenol A.
D, bisphenol S, bisphenol F or a condensate of halogenated bisphenol A and epichlorohydrin, glycidyl ether of phenol novolac resin,
Examples thereof include glycidyl ether of cresol novolac resin and glycidyl ether of bisphenol A novolac resin. The amount of epoxy resin is polyimide resin 10
1 to 200 parts by weight, preferably 5-1 to 0 parts by weight
If the amount is less than 100 parts by weight, the adhesiveness will be poor, and if the amount is too large, the film formability will be poor.

The phenolic resin (C) used in the present invention is
It has at least two phenolic hydroxyl groups in the molecule, and examples of such a resin include phenol novolac resin, cresol novolac resin, bisphenol A novolac resin, poly-p-vinylphenol,
Examples thereof include phenol aralkyl resin. The amount of the phenol resin is 2-1 with respect to 100 parts by weight of the epoxy resin.
50 parts by weight, preferably in the range of 50 to 120 parts by weight,
If it is more or less than this, the curability becomes insufficient.

The curing accelerator (D) used in the present invention is not particularly limited as long as it is used for curing the epoxy resin. Examples of such compounds include imidazoles, dicyandiamide derivatives, dicarboxylic acid dihydrazides, triphenylphosphine, tetraphenylphosphonium tetraphenylborate, and 2-ethyl-4-.
Methylimidazole-tetraphenylborate, 1,8
-Diazabicyclo (5,4,0) undecene-7-tetraphenylborate and the like are used. These may be used in combination of two or more. The amount of curing accelerator is epoxy resin 1
The amount is in the range of 0.01 to 50 parts by weight, preferably 0.1 to 20 parts by weight, relative to 00 parts by weight.

Inorganic substance filler (E) used in the present invention
Is added for the purpose of imparting low thermal expansion and low moisture absorption to the adhesive, and an inorganic insulating material such as silica, alumina, titania, glass, iron oxide or ceramic is used alone or 2
Used as a mixture of two or more species. The amount of the inorganic substance filler is in the range of 1 to 8000 parts by weight, preferably 50 to 4000 parts by weight, based on 100 parts by weight of the polyimide resin. If it is less than this, sufficient low thermal expansion and low hygroscopicity cannot be obtained, and if it is more than this, the adhesiveness decreases.

The tetracarboxylic dianhydride represented by the formula (I) used in the present invention is ethylene bis trimellitate dianhydride, trimethylene bis trimellitate dianhydride, tetramethylene bis trimellitate dianhydride. , Pentamethylene bis trimellitate dianhydride, hexamethylene bis trimellitate dianhydride, heptamethylene bis trimellitate dianhydride, octamethylene bis trimellitate dianhydride, nonamethylene bis trimellitate dianhydride, decamethylene bis trimellitate dianhydride There are tate dianhydride, dodecamethylene bis trimellitate dianhydride, hexadecamethylene bis trimellitate dianhydride, octadecamethylene bis trimellitate dianhydride and the like, and two or more kinds may be used in combination.

These tetracarboxylic dianhydrides can be synthesized from trimellitic anhydride monochloride and the corresponding diols. The above-mentioned tetracarboxylic dianhydride is 70 mol% with respect to the total tetracarboxylic dianhydride.
It includes the above. When it is less than 70 mol%, the temperature at the time of joining the adhesive film becomes high, which is not preferable.

Tetracarboxylic acid anhydrides which can be used with the tetracarboxylic acid dianhydride of formula (I) include, for example, pyromellitic dianhydride and 3,3 ', 4,4'-diphenyltetracarboxylic dianhydride. Things, 2, 2 ', 3,
3'-diphenyltetracarboxylic dianhydride, 2,2-
Bis (3,4-dicarboxyphenyl) propane dianhydride, 2,2-bis (2,3-dicarboxyphenyl) propane dianhydride, 1,1-bis (2,3-dicarboxyphenyl) ethane dianhydride Anhydride, 1,1-bis (3,4-dicarboxyphenyl) ethane dianhydride, bis (2,3-
Dicarboxyphenyl) methane dianhydride, bis (3,4
-Dicarboxyphenyl) methane dianhydride, bis (3,3
4-dicarboxyphenyl) sulfone dianhydride, 3,
4,9,10-Perylenetetracarboxylic dianhydride, bis (3,4-dicarboxyphenyl) ether dianhydride, benzene-1,2,3,4-tetracarboxylic dianhydride, 3,4 3 ', 4'-benzophenone tetracarboxylic dianhydride, 2,3,2', 3-benzophenone tetracarboxylic dianhydride, 2,3,3 ', 4'-benzophenone tetracarboxylic dianhydride, 1 , 2, 5, 6-
Naphthalenetetracarboxylic dianhydride, 2,3,6,7
-Naphthalene tetracarboxylic dianhydride, 1,2,4
5-naphthalene-tetracarboxylic dianhydride, 1,4
5,8-naphthalene-tetracarboxylic dianhydride,

2,6-dichloronaphthalene-1,4
5,8-tetracarboxylic dianhydride, 2,7-dichloronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 2,3,6,7-tetrachloronaphthalene-1,
4,5,8-tetracarboxylic dianhydride, phenanthrene-1,8,9,10-tetracarboxylic dianhydride, pyrazine-2,3,5,6-tetracarboxylic dianhydride,
Thiofene-2,3,4,5-tetracarboxylic dianhydride, 2,3,3 ', 4'-biphenyltetracarboxylic dianhydride, 3,4,3', 4'-biphenyltetracarboxylic dianhydride Anhydride, 2,3,2 ', 3'-biphenyltetracarboxylic dianhydride, bis (3,4-dicarboxyphenyl) dimethylsilane dianhydride, bis (3,4-dicarboxyphenyl) methylphenylsilane Dianhydride, bis (3,4-dicarboxyphenyl) diphenylsilane dianhydride, 1,4-bis (3,4-dicarboxyphenyldimethylsilyl) benzene dianhydride, 1,3-bis (3,4) -Dicarboxyphenyl) -1,1,3,3-
Tetramethyldicyclohexane dianhydride, p-phenylbis (trimellitic acid monoester acid anhydride),

Ethylene tetracarboxylic dianhydride, 1,
2,3,4-butanetetracarboxylic dianhydride, decahydronaphthalene-1,4,5,8-tetracarboxylic dianhydride, 4,8-dimethyl-1,2,3,5,6,7 −
Hexahydronaphthalene-1,2,5,6-tetracarboxylic dianhydride, cyclopentane-1,2,3,4-tetracarboxylic dianhydride, pyrrolidine-2,3,4,5
-Tetracarboxylic acid dianhydride, 1,2,3,4-cyclobutanetetracarboxylic acid dianhydride, bis (exo-bicyclo [2,2,1] heptane-2,3-dicarboxylic acid anhydride) sulfone, bicyclo -(2,2,2) -Octo (7) -ene 2,3,5,6-tetracarboxylic dianhydride, 2,2-bis (3,4-dicarboxyphenyl) hexafluoropropane dianhydride , 2,2-bis [4-
(3,4-Dicarboxyphenoxy) phenyl] hexafluoropropane dianhydride, 4,4'-bis (3,4-
Dicarboxyphenoxy) diphenyl sulfide dianhydride, 1,4-bis (2-hydroxyhexafluoroisopropyl) benzenebis (trimellitic anhydride),
1,3-bis (2-hydroxyhexafluoroisopropyl) benzenebis (trimellitic anhydride), 5-
(2,5-dioxotetrahydrofuryl) -3-methyl-3-cyclohexene-1,2-dicarboxylic acid anhydride,
There are tetrahydrofuran-2,3,4,5-tetracarboxylic dianhydride and the like, and two or more kinds may be mixed and used.

As the diamine used in the present invention,
1,2-diaminoethane, 1,3-diaminopropane,
1,4-diaminobutane, 1,5-diaminopentane,
Fats such as 1,6-diaminohexane, 1,7-diaminoheptane, 1,8-diaminooctane, 1,9-diaminononane, 1,10-diaminodecane, 1,11-diaminoundecane and 1,12-diaminododecane Group diamine, o-phenylenediamine, m-phenylenediamine, p-phenylenediamine, 3,3'-diaminodiphenyl ether, 3,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl ether, 3,3 '
-Diaminodiphenylmethane, 3,4'-diaminodiphenylmethane, 4,4'-diaminodiphenylmethane,
3,3'-diaminodiphenyldifluoromethane, 3,
4'-diaminodiphenyldifluoromethane, 4,4 '
-Diaminodiphenyldifluoromethane, 3,3'-diaminodiphenylsulfone, 3,4'-diaminodiphenylsulfone, 4,4'-diaminodiphenylsulfone, 3,3'-diaminodiphenylsulfone, 3,
4'-diaminodiphenyl sulfide, 4,4'-diaminodiphenyl sulfide,

3,3'-diaminodiphenyl ketone,
3,4'-diaminodiphenyl ketone, 4,4'-diaminodiphenyl ketone, 2,2-bis (3-aminophenyl) propane, 2,2 '-(3,4'-diaminodiphenyl) propane, 2,2 -Bis (4-aminophenyl) propane, 2,2-bis (3-aminophenyl) hexafluoropropane, 2,2- (3,4'-diaminodiphenyl) hexafluoropropane, 2,2-bis (4- Aminophenyl) hexafluoropropane, 1,
3-bis (3-aminophenoxy) benzene, 1,4-
Bis (3-aminophenoxy) benzene, 1,4-bis (4-aminophenoxy) benzene, 3,3 ′-(1,
4-phenylenebis (1-methylethylidene)) bisaniline, 3,4 '-(1,4-phenylenebis (1-methylethylidene)) bisaniline, 4,4'-(1,4
-Phenylene bis (1-methylethylidene)) bisaniline, 2,2-bis (4- (3-aminophenoxy) phenyl) propane, 2,2-bis (4- (4-aminophenoxy) phenyl) propane, 2, 2-bis (4-
(3-Aminophenoxy) phenyl) hexafluoropropane, 2,2-bis (4- (4-aminophenoxy))
Phenyl) hexafluoropropane, bis (4- (3-
Aminophenoxy) phenyl) sulfide, bis (4-
(4-aminophenoxy) phenyl) sulfide, bis (4- (3-aminophenoxy) phenyl) sulfone,
Bis (4- (4-aminophenoxy) phenyl) sulfone, 3,3′-dimethoxy-4,4′-diaminobiphenyl, 4,4′-methylene-bis (2,6-diethylaniline), o-tolidine sulfone , 1,4-bis (4-
Aminophenoxy) benzene, 4,4-methylene-bis (2,6-diisopropylaniline), 4,4'-bis (4-aminophenoxy) biphenyl, 1,1-bis (4- (4-aminophenoxy) phenyl ) Aromatic diamines such as cyclohexane and 1,3-bis (3-aminopropyl) tetramethyldisiloxane can be mentioned.

The condensation reaction of tetracarboxylic dianhydride and diamine is carried out in an organic solvent. In this case, the tetracarboxylic dianhydride and the diamine are preferably used in equimolar or almost equimolar amounts, and the addition order of each component is arbitrary. Examples of the organic solvent used include dimethylacetamide, dimethylformamide, N-methyl-2-pyrrolidone, dimethylsulfoxide, hexamethylphosphorylamide, m-cresol, and o-chlorophenol.

The reaction temperature is 80 ° C. or lower, preferably 0-5.
It is 0 ° C. As the reaction proceeds, the viscosity of the reaction solution gradually increases. In this case, polyamic acid that is a precursor of polyimide is generated.

The polyimide resin can be obtained by dehydrating and ring-closing the reaction product (polyamic acid). The dehydration ring closure can be performed by a method of heat treatment at 120 ° C to 250 ° C or a chemical method. In the case of the method of heat treatment at 120 ° C. to 250 ° C., it is preferable to perform it while removing water generated by the dehydration reaction outside the system. At this time, benzene, toluene,
Water may be removed azeotropically using xylene or the like.

In the case of performing dehydration ring closure by a chemical method, acetic anhydride, propionic anhydride, acid anhydride of benzoic anhydride, carbodiimide compound such as dicyclohexylcarbodiimide, etc. are used as a ring-closing agent. At this time, a ring-closing catalyst such as pyridine, isoquinoline, trimethylamine, aminopyridine, or imidazole may be used if necessary. The ring-closing agent or ring-closing catalyst is preferably used in the range of 1 to 8 mol per 1 mol of tetracarboxylic dianhydride.

If necessary, the adhesive film of the present invention may further contain a silane coupling agent, a titanium coupling agent,
Nonionic surfactants, fluorochemical surfactants, silicone additives, etc. may be added as appropriate.

The adhesive film of the present invention is manufactured as follows. First, an epoxy resin, a phenol resin, and a polyimide resin are dissolved in an organic solvent. The organic solvent used here is not particularly limited as long as it can uniformly dissolve or knead the above materials, and examples thereof include dimethylformamide, dimethylacetamide, and N.
-Methylpyrrolidone, dimethyl sulfoxide, diethylene glycol dimethyl ether, toluene, benzene,
Xylene, methyl ethyl ketone, tetrahydrofuran,
Examples thereof include ethyl cellosolve, ethyl cellosolve acetate, butyl cellosolve and dioxane.

Next, a hardening accelerator, an inorganic substance filler and, if necessary, additives are added and mixed. In this case, the kneading may be carried out by appropriately combining an ordinary stirrer, a raker, a three-roller, a ball mill and other dispersing machines.

The paste mixture thus obtained is evenly applied onto a base film such as a propylene sheet, and the solvent used is sufficiently volatilized, that is, at a temperature of about 60 to 200 ° C. Heat for ~ 30 minutes to obtain an adhesive film.

The adhesive film obtained in the present invention is an IC,
It is used for bonding lead frames of semiconductor elements such as LSIs, ceramic wiring boards, glass epoxy wiring boards, and glass polyimide wiring board support members.

The adhesive film of the present invention can be adhered by the following method, for example, when adhering a semiconductor element such as IC or LSI to a lead frame.

First, an adhesive film is formed into a tape ribbon shape, which is cut according to the size of a semiconductor element,
There is a method in which it is sandwiched between a lead frame and a semiconductor element and heat-bonded. When the bonding is performed by this method, the bonding can be performed by a device to which a die bonding device for a solder ribbon or the like is applied.

Second, there is a method in which an adhesive film is first formed on the lead frame and then the semiconductor element is heated and adhered. In order to form the adhesive film on the lead frame, there are a method of cutting the adhesive film according to the size of the semiconductor element, heating and pasting, a method of applying a solvent and pasting. Alternatively, the varnish of the adhesive film may be formed by printing on the lead frame. After the adhesive film is formed on the lead frame, the semiconductor element can be adhered by, for example, an apparatus to which a die bonding apparatus or the like conventionally used for silver paste is applied.

Thirdly, there is a method in which an adhesive film is formed on the back surface of the wafer, and then the wafer and the adhesive film are cut in a dicing step and adhered to the lead frame. To form the adhesive film on the back surface of the wafer, there are a method of heating and attaching the adhesive film, a method of applying a solvent and attaching. Alternatively, the varnish of the adhesive film may be formed on the back surface of the wafer by printing or spin coating. After the adhesive film is formed on the back surface of the wafer, for bonding the semiconductor element, for example, conventionally,
Bonding can be performed with a device to which a die bonding device or the like used for silver paste is applied.

In addition to the above method, an adhesive film is formed on an adhesive dicing film used in the dicing process, a wafer is attached to the adhesive film, and then the semiconductor element and the adhesive film are bonded in the dicing process. There are methods such as cutting and attaching to a lead frame, but the adhesive film of the present invention is not limited to any of the methods exemplified above.

[0031]

EXAMPLES The present invention will be described below with reference to examples. Synthesis Example 1 500 m equipped with a thermometer, stirrer and calcium chloride tube
41 g (0.1 mol) of 2,2-bis (4- (4-aminophenoxy) phenyl) propane and 150 g of dimethylacetamide were placed in a 1-liter four-necked flask and stirred. After dissolution of the diamine, 41 g of ethylenebis trimellitate dianhydride (0.
1 mol) was added in small portions. After reacting for 3 hours at room temperature, 30 g of xylene was added, and the mixture was heated at 150 ° C. while blowing N ₂ gas to remove xylene azeotropically with water. The reaction solution was poured into water, and the precipitated polymer was collected by filtration and dried to obtain polyimide A.

Synthesis Example 2 500 m equipped with a thermometer, stirrer and calcium chloride tube
32.94 g of 4,4′-methylene-bis (2,6-diisopropylaniline) was placed in a 4-necked flask having a volume of 1 l.
(0.09 mol), 1,3-bis (3-aminopropyl) tetramethyldisiloxane 2.48 g (0.01 mol) and N-methyl-2-pyrrolidone 150 g are taken,
It was stirred. After dissolution of the diamine, at room temperature, 43.8 g (0.1 mol) of tetramethylene bis trimellitate dianhydride.
Was added. The reaction was carried out at 5 ° C or lower for 5 hours, and acetic anhydride 20.
4 g (0.2 mol) and 15.8 g (0.2 mol) of pyridine were added and stirred for 1 hour at room temperature. The reaction solution was poured into water, and the precipitated polymer was collected by filtration and dried to obtain polyimide B.

Synthesis Example 3 500 ml equipped with a thermometer, stirrer and calcium chloride tube
In a four-necked flask of No. 2,2-bis (4-aminophenoxyphenyl) propane 32.8 g (0.08 mol),
5.08 g (0.02 mol) of 3,3 ', 5,5'-tetramethyl-4,4'-diaminodiphenylmethane and 100 g of dimethylacetamide were taken and stirred. After dissolution of the diamine, while cooling the flask in an ice bath, decamethylene bis trimellitate dianhydride 41.8 g (0.0
8 mol) and 6.44 g (0.02 mol) of benzophenone tetracarboxylic dianhydride were added in small portions. After completion of the addition, the mixture was reacted in an ice bath for 3 hours and further at room temperature for 4 hours, then, 25.5 g (0.25 mol) of acetic anhydride and 19.8 g (0.25 mol) of pyridine were added, and the mixture was kept at room temperature for 2 hours. It was stirred at. The reaction solution was poured into water, and the precipitated polymer was collected by filtration and dried to obtain polyimide C.

Examples 1 to 5 As shown in the formulation table of Table 1, Nos. Varnishes 1 to 7 (Examples of the present invention: No. 1 to 5, Comparative Examples: No. 6 to 7) were prepared. In Table 1, various symbols mean the following. YDCH-702: Tohto Kasei, Cresol novolac type epoxy (epoxy equivalent 220) N-865: Dainippon Ink, bisphenol novolac type epoxy (epoxy equivalent 208) ESCN-195: Sumitomo Chemical, cresol novolac epoxy (epoxy equivalent 200) H-1: Meiwa Kasei, phenol novolac (OH equivalent 106
) VH-4170: Dainippon Ink, Bisphenol A Novolac (OH equivalent 118)

[0035]

[Table 1] Table 1 Recipe (Unit: parts by weight) ━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━ No. 1 2 3 4 5 6 7 ━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━ Polyimide A B C A A-A 100 100 100 100 100 100 100 ──────────────────────────────────── Epoxy resin YDCN-702 N-865 ESCN-195 N-865 N-865 YDCN-702 − 50 parts 20 parts 10 parts 10 parts 100 parts 100 parts − ────────────────────── ─────────────── pheno H-1 H-1 VH-4170 VH-4170 VH-4170 H-1 − resin 24 10 5.9 5.6 70 48 − ─────── ────────────────────────────── Curing acceleration 2P4MHZ TPPK 2MA-0K TPPK TPPK 2P4MHZ − Agent 0.5 0.4 0.1 0.5 10 1 − ─ ────── ───────────────────────────── Inorganic substance Silica Silica Silica Alumina Alumina Silica Silica Filler 80 45 18 100 190 180 180 ──── ──────────────────────────────── SOLVENT DMAC NMP DMF DMF DMF DMAC DMAC 400 200 100 100 1000 1000 500 ━━ ━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━ However, the symbols in Table 1 have the following meanings. DMAC: dimethylacetamide NMP: N-methylpyrrolidone DMF: dimethylformamide This varnish was applied on a polypropylene film to a thickness of 30 to 50 μm, and the temperature was 80 ° C. for 10 minutes, followed by 120 ° C.
And heated for 30 minutes to obtain an adhesive film.

Next, the adhesive strength of the obtained adhesive film was tested. Cut the adhesive film into a size of 4 x 4 mm,
This is sandwiched between a 4 × 4 mm silicon chip and a 42-plated alloy lead frame with silver plating, a load of 1000 g is applied and pressure is applied at 260 ° C. for 3 seconds, and then shear adhesive force is applied at room temperature using a push-pull gauge. At the time of heating and after heating for 20 seconds at 350 ° C., the adhesive force was measured (Table 2).

[0037]

[Table 2] Table 2 Paste film formability and adhesive film adhesive strength ━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━ ━━ * 1 No. 1 2 3 4 5 6 (Comparison) 7 (Comparison) ━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━ Room temperature 10.7 11.0 11.5 10.3 14.0 − 11.0 (kg / chip) ───────────────────────────── 350 ℃ 2.2 2.4 3.2 2.0 2.3 − 0.4 ━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━━lop could not.

[0038]

Since the adhesive film of the present invention is thermosetting, it has excellent adhesiveness when heated. By using the adhesive film of the present invention, it is possible to uniformly provide an adhesive layer on a large chip of IC or LSI.

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁵ Identification number Reference number within the agency FI Technical display location C09J 163/00 JFP 8830-4J // H01L 21/52 E 7376-4M (72) Inventor Yasuo Miyadera 48, Wadai, Tsukuba-shi, Ibaraki Tsukuba Development Laboratory, Hitachi Chemical Co., Ltd.

Claims (3)

[Claims] 1. (A) The following chemical formula 1 [Formula (I)] (However, n is an integer of 2 to 20.) Tetracarboxylic acid dianhydride is reacted with diamine to tetracarboxylic acid dianhydride contained in 70 mol% or more based on the total acid dianhydride. An adhesive film comprising: a polyimide resin obtained by the above; (B) an epoxy resin; (C) a phenol resin; (D) a curing accelerator; and (E) an inorganic substance filler. 2. A tetracarboxylic dianhydride represented by formula (A) (I) is contained in an amount of 70 mol% or more based on the total acid dianhydride by reacting a diamine with the tetracarboxylic dianhydride. The resulting polyimide resin (B) epoxy resin; and (C) phenol resin; are dissolved in an organic solvent, and (D) a curing accelerator; and (E) an inorganic substance filler are added to and mixed with the base film. The method for producing an adhesive film according to claim 1, wherein the coating film is applied and then heated. 3. A method for adhering a semiconductor element and a supporting member, wherein the adhesive film according to claim 1 is sandwiched between the semiconductor element and the supporting member and thermocompression bonding is performed.