JPH10180480A - Lead-free soldering material and electronic parts using the material - Google Patents

Lead-free soldering material and electronic parts using the material

Info

Publication number
JPH10180480A
JPH10180480A JP8310692A JP31069296A JPH10180480A JP H10180480 A JPH10180480 A JP H10180480A JP 8310692 A JP8310692 A JP 8310692A JP 31069296 A JP31069296 A JP 31069296A JP H10180480 A JPH10180480 A JP H10180480A
Authority
JP
Japan
Prior art keywords
weight
lead
solder material
free solder
balance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP8310692A
Other languages
Japanese (ja)
Other versions
JP3754152B2 (en
Inventor
Toshinori Kogashiwa
俊典 小柏
Takatoshi Arikawa
孝俊 有川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Denshi Kogyo KK
Original Assignee
Tanaka Denshi Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Denshi Kogyo KK filed Critical Tanaka Denshi Kogyo KK
Priority to JP31069296A priority Critical patent/JP3754152B2/en
Publication of JPH10180480A publication Critical patent/JPH10180480A/en
Application granted granted Critical
Publication of JP3754152B2 publication Critical patent/JP3754152B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To provide a highly reliable electronic parts by incorporating at least one kind of Fe and Ni of the prescribed quantity into Sn as the lead-free soldering material and performing the soldering through a Ni film thereby improving joining performance. SOLUTION: The lead-free soldering material has the composition consisting of, by weight, at least one kind of 0.01-5.0% Fe and Ni, and the balance Sn with inevitable impurities, preferably, 0.01-4.99% Fe, 0.01-4.99% Ni while the sum of Fe and Ni is 0.02-5.0%, and the balance Sn with inevitable impurities. An electronic member is joined with a substrate to form an electronic parts through the Ni film using the lead-free soldering material of this composition. In the soldering material, Sn raw material is preferably >=99.9wt.%, and the higher its purity is, the more the mixing of Pb can be avoided. The joining property with Ni interposition can be improved even in the Sn-based lead-free soldering material by the multiplier effect of at least one kind of Fe and Ni with Sn.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、鉛を使用しない半
田材料でNi膜の損傷を防止する性能に優れた無鉛半田
材料に関し、詳しくは、ICチップやコンデンサと基板
を、Ni被膜を介して接合する際に用いて好適な無鉛半
田材料、及びその半田材料を用いた電子部品に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a lead-free solder material which does not use lead and has excellent performance for preventing damage to a Ni film. More specifically, the present invention relates to a method for connecting an IC chip, a capacitor, and a substrate with a Ni film. The present invention relates to a lead-free solder material suitable for use in joining and an electronic component using the solder material.

【0002】[0002]

【従来の技術】現在、半導体装置やハイブリッドIC等
を実装する際にICチップやコンデンサ等と基板を接合
する場合、5重量%Sn−95重量%Pb組成に代表さ
れる鉛(Pb)基半田材料を用いて接合が行われてい
る。一方、最近は電子機器等の廃棄処理等の課題や環境
対策の推進により、鉛を使用しない無鉛半田材料に関す
る要求が高まってきた。この為、前記ICチップやコン
デンサ等の半田付け材と基板を接合するに適した無鉛半
田材料が要求されるが、融点、濡れ性、コストを考慮す
るとSn基無鉛半田材料が最も適している。
2. Description of the Related Art At present, when a semiconductor device, a hybrid IC or the like is mounted on an IC chip or a capacitor and the substrate is joined, a lead (Pb) -based solder represented by a composition of 5% by weight Sn-95% by weight Pb is used. Joining is performed using materials. On the other hand, recently, there has been an increasing demand for a lead-free solder material that does not use lead due to issues such as disposal of electronic devices and the like and promotion of environmental measures. For this reason, a lead-free solder material suitable for joining a substrate to a soldering material such as the IC chip or capacitor is required, but an Sn-based lead-free solder material is most suitable in consideration of melting point, wettability, and cost.

【0003】ここで、本発明に於いて電子部材とは、電
子部品を実装するに際して基板と接合される半田付け材
をいい、ICチップ等の電子素子、コンデンサ、抵抗等
のチップ部品等があげられる。また電子部品とは、半田
付けして実装された半導体装置、コンデンサ等のような
機能部品や該機能部品等を搭載した配線基板をいう。
In the present invention, the term "electronic member" refers to a soldering material which is joined to a substrate when mounting an electronic component, such as an electronic element such as an IC chip, a chip component such as a capacitor or a resistor. Can be The electronic component refers to a semiconductor device mounted by soldering, a functional component such as a capacitor, and a wiring board on which the functional component and the like are mounted.

【0004】上記電子部材と基板を接合するに適した無
鉛半田材料として、前述の事情から最近いろいろな提案
がなされている。例えば特開平8−132277号には
電子機器などの回路基板上に小型のチップ部品などを精
度良く実装するに適したSn基無鉛半田材料が提案され
ている。
[0004] Various proposals have recently been made as a lead-free solder material suitable for bonding the electronic member and the substrate from the above-mentioned circumstances. For example, Japanese Patent Application Laid-Open No. 8-132277 proposes a Sn-based lead-free solder material suitable for mounting small chip components and the like on a circuit board of an electronic device or the like with high accuracy.

【0005】一方、電子部材と基板を半田付けする際に
Pb基半田材料を用いる場合、その接合性を向上させる
ためにNi、Cu等の被膜を介在させて半田付けするこ
とが通常行われている。しかしながら、前記Sn基無鉛
半田材料を用い、Ni被膜を介在させて半田付けを行っ
た場合、Pb基半田材料を用いた時に得られたような接
合性の向上が得られないという問題が生じてきた。
On the other hand, when a Pb-based solder material is used for soldering an electronic member and a board, soldering is usually performed with a coating of Ni, Cu or the like interposed therebetween in order to improve the bonding property. I have. However, when soldering is performed using the Sn-based lead-free solder material with a Ni coating interposed therebetween, there is a problem that the improvement of the joining property as obtained when the Pb-based solder material is used cannot be obtained. Was.

【0006】[0006]

【発明が解決しようとする課題】前述の従来事情に鑑
み、本発明では組成が無鉛であり、Sn基であって、N
i被膜を介在させて半田付けすることによる接合性(以
下Ni介在接合性という)を向上させる事が出来るSn
基無鉛半田材料及びこれを用いてなる電子部品を提供す
ることを目的とする。
SUMMARY OF THE INVENTION In view of the above-mentioned conventional circumstances, in the present invention, the composition is lead-free, Sn-based,
Sn that can improve the bondability (hereinafter referred to as Ni-bonded bondability) by soldering with an i-film interposed
It is an object to provide a lead-free solder material and an electronic component using the same.

【0007】[0007]

【課題を解決するための手段】本発明者等が鋭意検討を
重ねた結果、半田材料の組成を、Snの中に、Fe及び
Niのうち少なくとも1種を所定量含有させることによ
り前述の目的を達成し得る事を知見し、本発明を完成す
るに至った。
As a result of intensive studies by the present inventors, the above-mentioned object can be attained by making the composition of the solder material include at least one of Fe and Ni in Sn in a predetermined amount. It has been found that the present invention can be achieved, and the present invention has been completed.

【0008】すなわち本発明の無鉛半田材料は請求項1
記載のように、Fe及びNiのうち少なくとも1種を
0.01〜5.0重量%、及び残部がSnと不可避不純
物からなることを特徴とする。
That is, the lead-free solder material of the present invention is characterized in claim 1
As described, at least one of Fe and Ni is 0.01 to 5.0% by weight, and the balance is composed of Sn and unavoidable impurities.

【0009】また本発明の無鉛半田材料は請求項2記載
のように、Fe:0.01〜4.99重量%、Ni:
0.01〜4.99重量%でその合計量が0.02〜
5.0重量%、及び残部がSnと不可避不純物からなる
ことを特徴とする。
The lead-free solder material according to the present invention is characterized in that Fe: 0.01 to 4.99% by weight and Ni:
0.01 to 4.99% by weight and the total amount is 0.02 to
It is characterized by 5.0% by weight and the balance consisting of Sn and unavoidable impurities.

【0010】本発明の電子部品は請求項3記載のよう
に、Fe及びNiのうち少なくとも1種を0.01〜
5.0重量%、及び残部がSnと不可避不純物からなる
無鉛半田材料を用いて、電子部材と基板を、Ni被膜を
介して接合したことを特徴とする。
In the electronic component according to the present invention, at least one of Fe and Ni is contained in an amount of 0.01 to 0.01.
The electronic member and the substrate are joined via a Ni film using a lead-free solder material containing 5.0% by weight and the balance of Sn and unavoidable impurities.

【0011】また本発明の電子部品は請求項4記載のよ
うに、Fe:0.01〜4.99重量%、Ni:0.0
1〜4.99重量%でその合計量が0.02〜5.0重
量%、及び残部がSnと不可避不純物からなる無鉛半田
材料を用いて、電子部材と基板を、Ni被膜を介して接
合したことを特徴とする。
The electronic component according to the present invention is characterized in that Fe: 0.01 to 4.99% by weight and Ni: 0.0
An electronic member and a substrate are joined via a Ni coating by using a lead-free solder material comprising 1 to 4.99% by weight, the total amount being 0.02 to 5.0% by weight, and the balance being Sn and unavoidable impurities. It is characterized by having done.

【0012】また本発明の電子部品は請求項5記載のよ
うに、Fe及びNiのうち少なくとも1種を0.01〜
4.99重量%、Fe,Ni以外の選択成分が0.01
〜4.99重量%で、その合計量が0.02〜5.0重
量%、及び残部がSnと不可避不純物からなる無鉛半田
材料を用いて、電子部材と基板を、Ni被膜を介して接
合したことを特徴とする。
In the electronic component of the present invention, at least one of Fe and Ni is contained in an amount of 0.01 to 0.01.
4.99% by weight, 0.01% of selected components other than Fe and Ni
The electronic member and the substrate are joined via a Ni coating using a lead-free solder material of up to 4.99% by weight, the total amount of which is 0.02 to 5.0% by weight, and the balance being Sn and unavoidable impurities. It is characterized by having done.

【0013】また本発明の電子部品は請求項6記載のよ
うに、Fe:0.01〜4.98重量%、Ni:0.0
1〜4.98重量%、Fe,Ni以外の選択成分:0.
01〜4.98重量%で、その合計量が0.03〜5.
0重量%、及び残部がSnと不可避不純物からなる無鉛
半田材料を用いて、電子部材と基板を、Ni被膜を介し
て接合したことを特徴とする。
Further, the electronic component of the present invention is characterized in that Fe: 0.01 to 4.98% by weight and Ni: 0.0
1-4.98% by weight, optional components other than Fe and Ni: 0.
01 to 4.98% by weight, and the total amount is from 0.03 to 5.
The electronic member and the substrate are joined via a Ni coating by using a lead-free solder material containing 0% by weight and the balance consisting of Sn and unavoidable impurities.

【0014】本発明の電子部品は請求項7記載のよう
に、上記電子部材がICチップ又はコンデンサであるこ
とを特徴とする。
The electronic component of the present invention is characterized in that the electronic member is an IC chip or a capacitor.

【0015】[0015]

【発明の実施の形態】以下、本発明についてさらに詳し
く説明する。
BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described in more detail.

【0016】本発明になる半田材料の組成は、無鉛であ
ることが必要である。本発明に於ける無鉛とは、Pb含
有量を環境対策上好ましい量まで低減したものであり、
好ましくは不可避不純物中に含まれる微量な程度にまで
低減した鉛無添加のものである。
The composition of the solder material according to the present invention needs to be lead-free. The lead-free in the present invention means that the Pb content is reduced to a preferable amount for environmental measures,
Preferably, it is a lead-free one reduced to a trace amount contained in the inevitable impurities.

【0017】また本発明の半田材料は融点、濡れ性、コ
スト等を考慮してSn基である。本発明に於けるSn原
料は、99.9重量%以上の高純度Snを用いることが
好ましい。更に好ましくは99.99重量%以上であ
る。Sn原料が高純度である程、不可避不純物中にPb
の混入を避ける事が出来て好ましい。
The solder material of the present invention is Sn-based in consideration of melting point, wettability, cost and the like. As the Sn raw material in the present invention, it is preferable to use high purity Sn of 99.9% by weight or more. More preferably, it is 99.99% by weight or more. The higher the purity of the Sn raw material, the more Pb in the unavoidable impurities
It is preferable because it is possible to avoid the contamination.

【0018】本発明に於いては、所定量のFe,Niの
うち少なくとも1種及び残部がSnと不可避不純物から
なる無鉛半田材料とすることにより、Fe,Niのうち
少なくとも1種とSnとの相乗効果によって、組成がS
n基無鉛半田材料でありながら、Ni介在接合性を向上
させる事が出来る。
In the present invention, at least one of Fe and Ni and the remainder are made of a lead-free solder material comprising Sn and unavoidable impurities, so that at least one of Fe and Ni and Sn are mixed. Due to the synergistic effect, the composition becomes S
Although it is an n-based lead-free solder material, it is possible to improve the Ni intervening bonding property.

【0019】Fe,Niのうち少なくとも1種を含有す
るSn基無鉛半田材料に於いて、Fe,Niのうち少な
くとも1種の含有量が0.01重量%以上の時、0.0
1重量%未満と対比してNi介在接合性を大きく向上さ
せることが出来る。この為、Fe,Niのうち少なくと
も1種の含有量は0.01重量%以上である事が必要で
ある。この中でもFe,Niのうち少なくとも1種の含
有量が0.1重量%以上の時Ni介在接合性は一段と向
上してくる為、好ましくは0.1重量%以上である。
In a Sn-based lead-free solder material containing at least one of Fe and Ni, when the content of at least one of Fe and Ni is 0.01% by weight or more, 0.0
Compared with less than 1% by weight, the Ni intervening bondability can be greatly improved. Therefore, the content of at least one of Fe and Ni needs to be 0.01% by weight or more. Among these, when the content of at least one of Fe and Ni is 0.1% by weight or more, the Ni intervening bondability is further improved, and therefore it is preferably 0.1% by weight or more.

【0020】Fe,Niのうち少なくとも1種の含有量
が5重量%を超える時、5重量%以下と対比してNi介
在接合性は低下してくる。この為、Fe,Niのうち少
なくとも1種の含有量は5重量%以下であることが必要
である。
When the content of at least one of Fe and Ni exceeds 5% by weight, the Ni intervening bondability is reduced as compared with 5% by weight or less. Therefore, the content of at least one of Fe and Ni needs to be 5% by weight or less.

【0021】所定量のFe,Niのうち少なくとも1種
の中で、Feを0.01〜4.99重量%及びNiを
0.01〜4.99重量%であって、その合計量を0.
02〜5重量%とすることによりNi介在接合性は一段
と向上し、さらに好ましく用いられる。またその合計量
を0.1〜5重量%とすることが最も好ましい。
In at least one of the predetermined amounts of Fe and Ni, the content of Fe is 0.01 to 4.99% by weight and the content of Ni is 0.01 to 4.99% by weight. .
By setting the content to 02 to 5% by weight, the Ni intervening bondability is further improved, and it is more preferably used. Most preferably, the total amount is 0.1 to 5% by weight.

【0022】このため、Fe,Niのうち少なくとも1
種及び残部がSnと不可避不純物からなる無鉛半田材料
に於いて、Fe,Niのうち少なくとも1種の含有量は
0.01〜5重量%と定めた。好ましくは0.1〜5重
量%である。更に好ましくは、Feを0.01〜4.9
9重量%及びNiを0.01〜4.99重量%であっ
て、その合計量を0.02〜5重量%とすることであ
り、最も好ましくはその合計量が0.1〜5重量%であ
る。
For this reason, at least one of Fe and Ni
The content of at least one of Fe and Ni in the lead-free solder material whose seeds and balance are Sn and unavoidable impurities is determined to be 0.01 to 5% by weight. Preferably it is 0.1 to 5% by weight. More preferably, 0.01 to 4.9 Fe is used.
9% by weight and 0.01 to 4.99% by weight of Ni, with the total amount being 0.02 to 5% by weight, and most preferably the total amount is 0.1 to 5% by weight. It is.

【0023】本発明の無鉛半田材料に於いては、Snの
中に、Fe,Niのうち少なくとも1種を0.01〜4
/99重量%含有する限り、Fe,Ni以外の選択成分
を0.01〜4.99重量%含有し、その合計量が0.
02〜5重量%であれば、Ni介在接合性を向上させる
事が出来る。また、Snの中に、Feを0.01〜4.
98重量%、Niを0.01〜4.98重量%含有する
限り、Fe,Ni以外の選択成分を0.01〜4.98
重量%含有し、その合計量が0.03〜5.0重量%で
あれば、Ni介在接合性を向上させる事が出来る。
In the lead-free solder material of the present invention, at least one of Fe and Ni is contained in Sn at 0.01 to 4%.
/ 99% by weight as long as the content of selected components other than Fe and Ni is 0.01 to 4.99% by weight, and the total amount is 0.1%.
When the content is from 02 to 5% by weight, the Ni interposition bonding property can be improved. In addition, 0.01 to 4.0 of Fe is contained in Sn.
As long as 98% by weight and 0.01 to 4.98% by weight of Ni are contained, optional components other than Fe and Ni are contained at 0.01 to 4.98%.
% By weight, and when the total amount is 0.03 to 5.0% by weight, it is possible to improve the Ni-mediated bonding property.

【0024】本発明において選択成分とは、Snの中に
所定量のFe,Niのうち少なくとも1種を含有するこ
とで得られる効果(Ni介在接合性の向上)を失わせな
い機能を有する添加元素で、任意に含有させることがで
きるいわゆる随伴元素(incidental elements) である。
本発明に係る選択成分としては、Zn,Si,Cu,
P,Ag,Sb等が例示出来る。しかしFe,Ni以外
の選択成分を含有しない方が、Ni介在接合性を向上さ
せる為に好ましい。
In the present invention, the selected component is an additive having a function of not losing the effect (improvement of Ni intervening bonding) obtained by including at least one of a predetermined amount of Fe and Ni in Sn. These are so-called incidental elements which can be optionally contained.
The optional components according to the present invention include Zn, Si, Cu,
P, Ag, Sb and the like can be exemplified. However, it is preferable not to contain a selective component other than Fe and Ni in order to improve the Ni interposed bonding property.

【0025】本発明の無鉛半田材料に於いては、Sn及
び不可避不純物の合計含有量は95重量%以上であるこ
とが必要である。この時、Ni介在接合性を向上させる
事が出来る。
In the lead-free solder material of the present invention, the total content of Sn and unavoidable impurities must be 95% by weight or more. At this time, it is possible to improve the Ni interposed bonding property.

【0026】本発明の無鉛半田材料に於いて、所定量の
Snの中に所定量のFe,Niのうち少なくとも1種を
含有させることにより、Ni介在接合性を向上させる事
が出来る理由は明らかではないが、Ni被膜の損傷の程
度が小さい為と考えられる。Ni被膜上に半田接合した
後、半田をリフローしてNi被膜の損傷の程度を観察す
ると、従来のSn基無鉛半田材料の場合はNi被膜の損
傷が大きい事に対して、本発明になるSn基無鉛半田材
料の場合はNi被膜の損傷が微量であることからいえる
事である。
In the lead-free solder material of the present invention, it is apparent that the inclusion of at least one of a predetermined amount of Fe and Ni in a predetermined amount of Sn can improve the Ni-mediated bonding. This is probably because the degree of damage to the Ni film is small. Observation of the degree of damage of the Ni film by solder reflow after the solder bonding on the Ni film shows that the damage of the Ni film is large in the case of the conventional Sn-based lead-free solder material. In the case of the base lead-free solder material, it can be said that the damage of the Ni film is minute.

【0027】本発明に用いるSn基無鉛半田材料は、テ
ープ、ワイヤ、ペレット、ボール状に加工して用いた
り、浸せき浴や蒸着用の材料として用いることが出来
る。また、高融点粒子を混入させた複合材料として使用
することも出来る。
The Sn-based lead-free solder material used in the present invention can be used after being processed into a tape, wire, pellet, or ball shape, or can be used as an immersion bath or vapor deposition material. It can also be used as a composite material mixed with high melting point particles.

【0028】テープ、ワイヤ状の加工方法として次の方
法が例示出来る テープの場合は、インゴットに鋳造した後圧延、スリッ
ター加工を施し所定寸法のテープに仕上げる。テープ寸
法としては厚さ0.05〜0.5mm、幅0.5〜5.
0mmの範囲が好ましい。ワイヤの場合は、インゴット
の押出し、又は溶湯を水中へ噴出する急冷方法により素
線を得て、伸線加工により所定寸法のワイヤに仕上げ
る。ワイヤ寸法としては直径0.05〜5.0mm迄の
範囲が好ましい。
The following methods can be exemplified as a method for processing a tape or a wire. In the case of a tape, it is cast into an ingot and then subjected to rolling and slitting to finish the tape into a predetermined size. The tape has a thickness of 0.05 to 0.5 mm and a width of 0.5 to 5.
A range of 0 mm is preferred. In the case of a wire, a wire is obtained by extruding an ingot or a quenching method in which a molten metal is jetted into water, and finished to a wire of a predetermined size by wire drawing. The wire size is preferably in the range of 0.05 to 5.0 mm in diameter.

【0029】半導体素子を基板に接合するダイボンディ
ングやハイブリッドIC用に本発明になるSn基無鉛半
田材料を用いる際、半導体素子と基板の水平度を保つ為
に、半田材料に高融点粒子を混入させた複合材料として
用いることが出来る。高融点粒子の融点は400℃以
上、その含有量は0.001〜0.6重量%、粒子の径
辺寸法は5〜100μmである事が好ましい。高融点粒
子の材質としては、Cu,Ni等の金属粒子、SiO2
等の酸化物、SiC等の炭化物が例示出来る。
When using the Sn-based lead-free solder material according to the present invention for die bonding or hybrid IC for joining a semiconductor element to a substrate, high melting point particles are mixed into the solder material in order to maintain the levelness of the semiconductor element and the substrate. It can be used as a composite material. The melting point of the high melting point particles is preferably 400 ° C. or more, the content is 0.001 to 0.6% by weight, and the diameter of the particles is preferably 5 to 100 μm. As the material of the high melting point particles, metal particles such as Cu and Ni, SiO 2
And carbides such as SiC.

【0030】本発明品は、電子部材や基板等の表面にN
i被膜が施されている場合に、半田付けすることによる
接合性を向上させる事が出来る。その中でも、アルミナ
等のようなセラミックスにNi被膜を施して半田付けす
る場合に好ましい。Ni被膜の形成方法はめっき、蒸着
等の方法が用いられる。蒸着によるNi被膜の厚さは1
000〜3000オングストロームが好ましい。
The product of the present invention can be used on a surface of an electronic member or a substrate.
In the case where the i-coat is applied, the joining property by soldering can be improved. Among them, it is preferable to apply a Ni coating to ceramics such as alumina or the like and solder them. As a method for forming the Ni film, a method such as plating or vapor deposition is used. The thickness of the Ni coating by evaporation is 1
000-3000 Å is preferred.

【0031】次に、図1を参照して本発明になる電子部
品の一例を説明する。図1は樹脂封止する前の半導体装
置の側面図である。基板であるリードフレームのダイ1
表面にNiめっき2を設けてある。半導体素子であるI
Cチップ5の上面にはAl電極6、下面にはメタライズ
層であるNiめっき4を設けてある。すなわち半田層3
は、Ni被膜であるめっき層2,4を介してダイ1とI
Cチップ5を接続している。ICチップ5の上面のAl
電極6には、金線のワイヤ7がワイヤボンド接続されて
いる。前記半田層3による接続方法は、Niめっき層2
を有するダイ1表面に半田ペレット、Niめっき層4を
有するICチップ5を順に積載し、水素雰囲気の加熱炉
中を通過させて半田付けを行う。また、プリント基板上
の配線上の所定箇所に、Ni被膜を有するICチップや
コンデンサ等の電子部材を半田を介して接続し搭載し、
その後樹脂封止して電子部品である半導体装置とする。
Next, an example of an electronic component according to the present invention will be described with reference to FIG. FIG. 1 is a side view of the semiconductor device before resin sealing. Die 1 of lead frame as substrate
Ni plating 2 is provided on the surface. I which is a semiconductor element
An Al electrode 6 is provided on the upper surface of the C chip 5, and a Ni plating 4 as a metallized layer is provided on the lower surface. That is, the solder layer 3
Is connected to the dies 1 through the plating layers 2 and 4 which are Ni coatings.
C chip 5 is connected. Al on the upper surface of the IC chip 5
A gold wire 7 is wire-bonded to the electrode 6. The connection method using the solder layer 3 is as follows.
, A solder pellet and an IC chip 5 having a Ni plating layer 4 are sequentially stacked on the surface of the die 1 and passed through a heating furnace in a hydrogen atmosphere to perform soldering. Also, an electronic member such as an IC chip or a capacitor having a Ni coating is connected and mounted via solder at a predetermined position on the wiring on the printed board,
Thereafter, resin sealing is performed to obtain a semiconductor device which is an electronic component.

【0032】[0032]

【実施例】【Example】

(実施例1)図2に示す試験装置と測定方法に関する概
要図を参照して説明する。純度が99.99重量%Sn
地金とFeを所定量配合し、真空溶解した後、鋳造して
表1に示す組成のインゴットを得た。該インゴットを圧
延して厚さ0.1mm×幅10.0mmテープを得た。
さらに前記テープを素材としてプレス加工を行い、厚さ
0.1mm×直径1.8mmの半田ペレットに仕上げ
た。アルミナ基板11,11’上に蒸着により形成した
2000オングストロームのNi被膜12,12’を形
成し、図示のようにNi被膜12,12’を介して、フ
ラックス(日本アルファメタル製R5003)を塗布し
た前記半田ペレット13を3箇所載置し、Ni被膜1
2,12’を図示のようにリード14で配線した。次い
で、該試験装置を水素雰囲気の加熱炉中で加熱した後、
炉外に取り出して冷却することによりアルミナ基板1
1,11’同士をNi被膜12,12’を介して3箇所
で半田付け接合した。次いで図示のように、1mAの一
定電流を流して半田ペレット間の電圧V1 ,V2 を測定
し、R=(V1 +V2 )/Iから抵抗値を測定した。図
2と同一の試験装置を、前記した半田付け方法により1
0回繰り返して半田付けすることによる劣化性能を試験
した。前記した半田付け方法による半田付けを1回行っ
た時の抵抗値RをR1 とし、10回行った時の抵抗値R
をR10とし、(R10/R1 )を半田付け性劣化度とし
た。試験装置5個の平均値を半田付け性劣化度の測定結
果として表2に示す。
(Embodiment 1) A description will be given with reference to a schematic diagram of a test apparatus and a measurement method shown in FIG. Purity 99.99 wt% Sn
A predetermined amount of the base metal and Fe were mixed, melted in vacuum, and then cast to obtain an ingot having the composition shown in Table 1. The ingot was rolled to obtain a tape having a thickness of 0.1 mm and a width of 10.0 mm.
Further, the tape was used as a raw material to perform press working, thereby completing a solder pellet having a thickness of 0.1 mm and a diameter of 1.8 mm. 2000 angstrom Ni coatings 12 and 12 ′ were formed on the alumina substrates 11 and 11 ′ by vapor deposition, and a flux (R5003 made by Nippon Alpha Metal) was applied via the Ni coatings 12 and 12 ′ as shown in the figure. The solder pellet 13 is placed at three places, and the Ni coating 1
2, 12 'were wired by leads 14 as shown. Next, after heating the test apparatus in a heating furnace in a hydrogen atmosphere,
The alumina substrate 1 is taken out of the furnace and cooled.
1, 11 'were soldered and joined at three places via Ni coatings 12, 12'. Next, as shown in the figure, a constant current of 1 mA was passed to measure the voltages V 1 and V 2 between the solder pellets, and the resistance was measured from R = (V 1 + V 2 ) / I. The same test apparatus as that shown in FIG.
Deterioration performance due to soldering repeated 0 times was tested. The resistance value R when performing once soldering aforementioned soldering method as R 1, the resistance value R when performing 10 times
Was a R 10, and the soldering property deterioration degree of the (R 10 / R 1). Table 2 shows the average values of the five test devices as the measurement results of the degree of deterioration in solderability.

【0033】(実施例2〜20/比較例1〜6)実施例
1で説明したインゴットの組成を表1中に記載のように
したこと以外は、実施例1と同様にして半田ペレットを
得た後、試験装置を作成して、半田付け性劣化試験を行
った。試験装置5個の平均値を半田付け性劣化度の測定
結果として表2に示す。
(Examples 2 to 20 / Comparative Examples 1 to 6) Solder pellets were obtained in the same manner as in Example 1 except that the composition of the ingot described in Example 1 was as described in Table 1. After that, a test device was prepared and a solderability deterioration test was performed. Table 2 shows the average value of the five test devices as the measurement result of the degree of deterioration in solderability.

【0034】[0034]

【表1】 [Table 1]

【0035】[0035]

【表2】 [Table 2]

【0036】以上の測定結果によれば、半田付け性が悪
いアルミナ表面にNi被膜を形成して半田付け試験を行
ったところ、本発明になるSn基無鉛半田材料を用いる
と、Pb基半田材料を用いた時に得られたような接合性
の向上が得られた。従来のSn基無鉛半田材料を用いる
と、十分な接合性の向上が得られていないが、この理由
はNi被膜が溶解、損傷し非接合面が出来ている事が判
った。該非接合面が出来ると電気抵抗が増大することに
着目し、本試験では前述した(R10/R1 )を半田付け
性劣化度として半田付け性の評価基準とした。
According to the above measurement results, when a Ni coating was formed on the surface of alumina having poor solderability, and a soldering test was performed. When the Sn-based lead-free solder material according to the present invention was used, the Pb-based solder material was used. As a result, an improvement in the bondability obtained when using was obtained. When the conventional Sn-based lead-free solder material is used, a sufficient improvement in the joining property has not been obtained, but it has been found that the reason is that the Ni coating is dissolved and damaged and a non-joining surface is formed. Focusing on the fact that the formation of the non-bonded surface increases the electrical resistance, in this test, the above-mentioned (R 10 / R 1 ) was used as the solderability evaluation criterion as the solderability deterioration degree.

【0037】すなわち、0.01〜5.0重量%のFe
及び残部が不可避不純物とSnである実施例1〜4は、
半田付け性劣化度が1.6〜2.0と優れた効果を示し
た。この中でも、Feの含有量が0.1〜5.0重量%
のものは、半田付け性劣化度1.6〜1.8と更に優れ
た効果を示した。
That is, 0.01 to 5.0% by weight of Fe
And Examples 1 to 4 in which the balance is unavoidable impurities and Sn,
The degree of deterioration in solderability was 1.6 to 2.0, indicating an excellent effect. Among them, the content of Fe is 0.1 to 5.0% by weight.
No. 1 exhibited a more excellent effect with a solderability deterioration degree of 1.6 to 1.8.

【0038】0.01〜5.0重量%のNi及び残部が
不可避不純物とSnである実施例5〜8は、半田付け性
劣化度が1.6〜2.0と優れた効果を示した。この中
でも、Niの含有量が0.1〜5.0重量%のものは、
半田付け性劣化度1.6〜1.8と更に優れた効果を示
した。
In Examples 5 to 8 in which 0.01 to 5.0% by weight of Ni and the balance were unavoidable impurities and Sn, the degree of deterioration in solderability was 1.6 to 2.0, showing excellent effects. . Among them, those having a Ni content of 0.1 to 5.0% by weight are:
Deterioration degree of solderability was 1.6 to 1.8, which was a further excellent effect.

【0039】0.01〜4.0重量%のFeと0.01
〜4.0重量%のNiを、その合計量が0.2〜5.0
重量%とし、残部が不可避不純物とSnである実施例9
〜16は、半田付け性劣化度が1.1〜1.4と更に優
れた効果を示した。
0.01 to 4.0% by weight of Fe and 0.01
To 4.0% by weight of Ni in a total amount of 0.2 to 5.0.
Example 9 in which the weight percent is used and the balance is unavoidable impurities and Sn.
No. 16 to No. 16 showed a further excellent effect with a solderability deterioration degree of 1.1 to 1.4.

【0040】所定量のFe及びNiのうち少なくとも1
種と、選択成分としてZn、Si、Cu、Pを0.2〜
3.0重量%、及び残部が不可避不純物とSnである実
施例17〜20の半田付け性劣化度は、2.3〜2.7
と一応の成果が得られている。
At least one of the predetermined amounts of Fe and Ni
Seed and Zn, Si, Cu, P as selective components 0.2 to 0.2
The deterioration of the solderability of Examples 17 to 20 in which 3.0% by weight and the balance are unavoidable impurities and Sn was 2.3 to 2.7.
A tentative result has been obtained.

【0041】一方、不可避不純物とSnのみからなる比
較例1は、半田付け性劣化度が3.9と悪いものであっ
た。所定量のFe及びNiの双方を含有せず、選択成分
としてSiを0.2重量%、及び残部が不可避不純物と
Snである比較例2の半田付け性劣化度は、3.8と悪
いものであった。Fe又はNiを7.0重量%、及び残
部が不可避不純物とSnである比較例3〜4の半田付け
性劣化度は、3.5〜3.6と悪いものであった。Fe
及びNiをその合計量として7.0重量%、及び残部が
不可避不純物とSnである比較例5の半田付け性劣化度
は、3.2と悪いものであった。所定量のFe及びNi
のうち少なくとも1種を含有しているものの、選択成分
として8.0重量%Zn、及び残部が不可避不純物とS
nである比較例6の半田付け性劣化度は、3.1と悪い
ものであった。
On the other hand, in Comparative Example 1 consisting only of unavoidable impurities and Sn, the degree of deterioration in solderability was 3.9, which was poor. Comparative Example 2, which does not contain both predetermined amounts of Fe and Ni, contains 0.2% by weight of Si as a selective component, and the balance is unavoidable impurities and Sn, has a poor degree of deterioration in solderability of 3.8. Met. In Comparative Examples 3 and 4, in which 7.0% by weight of Fe or Ni and the balance were unavoidable impurities and Sn, the degree of deterioration in solderability was as poor as 3.5 to 3.6. Fe
And Ni as a total amount of 7.0% by weight, and the balance of Comparative Example 5 in which the balance was unavoidable impurities and Sn was as poor as 3.2. Predetermined amounts of Fe and Ni
Of at least one selected from the group consisting of 8.0% by weight Zn as a selective component, and the balance being unavoidable impurities and S
The degree of solderability deterioration of Comparative Example 6 where n was 3.1 was as poor as 3.1.

【0042】[0042]

【発明の効果】以上のように、Ni被膜を介在させた半
田付けに際して、本発明の無鉛半田材料によれば、所定
量のFe及びNiのうち少なくとも1種をSnに含有さ
せることにより半田付け性劣化度を向上させる事が出来
た。従って、無鉛Sn基であって、Ni被膜を介在させ
て半田付けする際の接合性を向上させることが出来ると
いう優れた効果を有している。本発明の必須成分である
所定量のFe及びNiのうち少なくとも1種を含有する
限り、0.48重量%迄の選択成分を含んでも良い。し
かし、中でも選択成分を含有せずに所定量のFe及びN
iのうち少なくとも1種をSnに含有させることで、N
i被膜を介在させて半田付けする際の接合性を向上し得
るより好ましい効果が得られた。さらには、所定量のF
e及びNiの双方をSnに含有させることにより、Ni
被膜を介在させて半田付けする際の接合性を向上し得る
最も好ましい効果が得られた。
As described above, according to the lead-free solder material of the present invention, at least one of a predetermined amount of Fe and Ni is contained in Sn at the time of soldering with a Ni film interposed therebetween. The degree of property deterioration was improved. Therefore, it is a lead-free Sn base, and has an excellent effect that the joining property when soldering with a Ni coating interposed can be improved. As long as it contains at least one of the predetermined amounts of Fe and Ni, which are essential components of the present invention, it may contain up to 0.48% by weight of selected components. However, among them, a certain amount of Fe and N
By including at least one of i in Sn, N
A more favorable effect was obtained that could improve the bonding property when soldering with the i-coat interposed. Further, a predetermined amount of F
By including both e and Ni in Sn, Ni
The most favorable effect was obtained that could improve the bonding property when soldering with a coating interposed.

【0043】また本発明に係る電子部品によれば、上記
無鉛半田材料を用いて、Ni被膜を介在させて電子部材
と基板を半田付けしてなるので、廃棄処理、環境対策等
の課題に対応でき、且つ電子部材と基板の接合性に優れ
た信頼性の高い電子部品を提供できた。この中でも、選
択成分を含有せず所定量のFe,Niの少なくとも1種
を含有した無鉛半田材料を用いた場合、半田付け接合性
を向上し得、より信頼性の高い電子部品が得られた。ま
た、所定量のFe,Niの双方を含有した無鉛半田材料
を用いた場合、半田付け接合性をさらに向上し得、最も
信頼性の高い電子部品が得られた。
According to the electronic component of the present invention, since the electronic member and the substrate are soldered by using the above-mentioned lead-free solder material with a Ni coating interposed therebetween, it is possible to cope with problems such as disposal and environmental measures. It was possible to provide a highly reliable electronic component which was excellent in bonding property between the electronic member and the substrate. Among these, when a lead-free solder material containing a predetermined amount of at least one of Fe and Ni without containing a selective component is used, soldering jointability can be improved, and a more reliable electronic component can be obtained. . In addition, when a lead-free solder material containing both predetermined amounts of Fe and Ni was used, solderability could be further improved, and the most reliable electronic component was obtained.

【図面の簡単な説明】[Brief description of the drawings]

【図1】電子部品の一例を示す半導体装置の側面図。FIG. 1 is a side view of a semiconductor device illustrating an example of an electronic component.

【図2】試験装置と測定方法に関する概要図。FIG. 2 is a schematic diagram illustrating a test apparatus and a measurement method.

【符号の説明】[Explanation of symbols]

1:リードフレームのダイ 2,4:Niめっき(Ni被膜) 3:半田層(無鉛半田材料) 5:ICチップ 6:Al電極 7:ワイヤ 11,11’:アルミナ基板 12,12’:Ni被膜 13:半田ペレット(無鉛半田材料) 14:リード 15:電源 16:電圧計 17:電流計 1: Die of lead frame 2, 4: Ni plating (Ni coating) 3: Solder layer (lead-free solder material) 5: IC chip 6: Al electrode 7: Wire 11, 11 ': Alumina substrate 12, 12': Ni coating 13: Solder pellet (lead-free solder material) 14: Lead 15: Power supply 16: Voltmeter 17: Ammeter

Claims (7)

【特許請求の範囲】[Claims] 【請求項1】 鉄(Fe)及びニッケル(Ni)のうち
少なくとも1種を0.01〜5.0重量%、及び残部が
錫(Sn)と不可避不純物からなる無鉛半田材料。
1. A lead-free solder material comprising 0.01 to 5.0% by weight of at least one of iron (Fe) and nickel (Ni), with the balance being tin (Sn) and unavoidable impurities.
【請求項2】 鉄(Fe)を0.01〜4.99重量
%、ニッケル(Ni)を0.01〜4.99重量%であ
って、その合計量が0.02〜5.0重量%、及び残部
が錫(Sn)と不可避不純物からなる無鉛半田材料。
2. Iron (Fe) is 0.01 to 4.99% by weight, nickel (Ni) is 0.01 to 4.99% by weight, and the total amount is 0.02 to 5.0%. %, And the balance is tin (Sn) and a lead-free solder material composed of unavoidable impurities.
【請求項3】 鉄(Fe)及びニッケル(Ni)のうち
少なくとも1種を0.01〜5.0重量%、及び残部が
錫(Sn)と不可避不純物からなる無鉛半田材料を用い
て、電子部材と基板を、Ni被膜を介して接合した電子
部品。
3. An electronic device using a lead-free solder material comprising at least one of iron (Fe) and nickel (Ni) in an amount of 0.01 to 5.0% by weight and a balance of tin (Sn) and unavoidable impurities. An electronic component in which a member and a substrate are joined via a Ni film.
【請求項4】 鉄(Fe)を0.01〜4.99重量
%、ニッケル(Ni)を0.01〜4.99重量%であ
って、その合計量が0.02〜5.0重量%、及び残部
が錫(Sn)と不可避不純物からなる無鉛半田材料を用
いて、電子部材と基板を、Ni被膜を介して接合した電
子部品。
4. An iron (Fe) content of 0.01 to 4.99% by weight and a nickel (Ni) content of 0.01 to 4.99% by weight, the total amount of which is 0.02 to 5.0%. An electronic component in which an electronic member and a substrate are joined via a Ni coating by using a lead-free solder material containing tin (Sn) and unavoidable impurities in the balance.
【請求項5】 鉄(Fe)及びニッケル(Ni)のうち
少なくとも1種を0.01〜4.99重量%、選択成分
が0.01〜4.99重量%であって、その合計量が
0.02〜5.0重量%、及び残部が錫(Sn)と不可
避不純物からなる無鉛半田材料を用いて、電子部材と基
板を、Ni被膜を介して接合した電子部品。
5. At least one of iron (Fe) and nickel (Ni) is 0.01 to 4.99% by weight, the optional component is 0.01 to 4.99% by weight, and the total amount is An electronic component in which an electronic member and a substrate are joined via a Ni coating using a lead-free solder material containing 0.02 to 5.0% by weight and the balance being tin (Sn) and unavoidable impurities.
【請求項6】 鉄(Fe)を0.01〜4.98重量
%、ニッケル(Ni)を0.01〜4.98重量%、選
択成分が0.01〜4.98重量%であって、その合計
量が0.03〜5.0重量%、及び残部が錫(Sn)と
不可避不純物からなる無鉛半田材料を用いて、電子部材
と基板を、Ni被膜を介して接合した電子部品。
6. An iron (Fe) content of 0.01 to 4.98% by weight, a nickel (Ni) content of 0.01 to 4.98% by weight, and a selective component of 0.01 to 4.98% by weight. An electronic component in which an electronic member and a substrate are joined via a Ni coating using a lead-free solder material having a total amount of 0.03 to 5.0% by weight and a balance of tin (Sn) and unavoidable impurities.
【請求項7】 上記電子部材がICチップ又はコンデン
サであることを特徴とする請求項3〜6のいずれか1項
に記載の電子部品。
7. The electronic component according to claim 3, wherein the electronic member is an IC chip or a capacitor.
JP31069296A 1996-11-08 1996-11-21 Lead-free solder material and electronic parts using the same Expired - Lifetime JP3754152B2 (en)

Priority Applications (1)

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Cited By (9)

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EP1004683A1 (en) * 1998-10-27 2000-05-31 Dana Corporation Bearing material
JP2001334384A (en) * 2000-05-22 2001-12-04 Murata Mfg Co Ltd Solder composition and soldered article
JP2002307187A (en) * 2001-02-09 2002-10-22 Taiho Kogyo Co Ltd Lead-free solder and solder joint
JP2005040847A (en) * 2003-07-25 2005-02-17 Hitachi Metals Ltd Manufacturing method of solder bowl
JP2006021205A (en) * 2004-07-06 2006-01-26 Seiko Epson Corp Lead-free solder alloy
US7022282B2 (en) 2000-08-07 2006-04-04 Murata Manufacturing Co., Ltd. Lead-free solder and soldered article
DE102009054068A1 (en) * 2009-11-20 2011-05-26 Epcos Ag Solder material for fixing an outer electrode in a piezoelectric component and piezoelectric component with a solder material
EP2261964A4 (en) * 2008-03-05 2011-12-07 Senju Metal Industry Co Lead-free solder joint structure and solder ball
WO2022172904A1 (en) * 2021-02-12 2022-08-18 日東電工株式会社 Alloy catalyst and electrode

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ES2764394T3 (en) * 2014-12-15 2020-06-03 Senju Metal Industry Co Solder alloy for galvanization and electronic components

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JPH0234295A (en) * 1988-07-19 1990-02-05 Jw Harris Co Inc Solder composition and usage thereof
JPH0397888A (en) * 1989-09-11 1991-04-23 Mitsubishi Electric Corp Tinned copper alloy product
JPH0732188A (en) * 1993-07-13 1995-02-03 Nippon Arumitsuto Kk Non-and low-lead content solder alloy
JPH08215881A (en) * 1995-02-10 1996-08-27 Tanaka Denshi Kogyo Kk Composite solder material and its production
JPH09213719A (en) * 1996-02-01 1997-08-15 Siemens Ag Method for brazing semiconductor substrate onto support

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Publication number Priority date Publication date Assignee Title
JPH0234295A (en) * 1988-07-19 1990-02-05 Jw Harris Co Inc Solder composition and usage thereof
JPH0397888A (en) * 1989-09-11 1991-04-23 Mitsubishi Electric Corp Tinned copper alloy product
JPH0732188A (en) * 1993-07-13 1995-02-03 Nippon Arumitsuto Kk Non-and low-lead content solder alloy
JPH08215881A (en) * 1995-02-10 1996-08-27 Tanaka Denshi Kogyo Kk Composite solder material and its production
JPH09213719A (en) * 1996-02-01 1997-08-15 Siemens Ag Method for brazing semiconductor substrate onto support

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6309760B1 (en) 1998-10-27 2001-10-30 Dana Corporation Bearing material
EP1004683A1 (en) * 1998-10-27 2000-05-31 Dana Corporation Bearing material
US6472086B2 (en) 1998-10-27 2002-10-29 Dana Corporation Bearing material
JP2001334384A (en) * 2000-05-22 2001-12-04 Murata Mfg Co Ltd Solder composition and soldered article
US7022282B2 (en) 2000-08-07 2006-04-04 Murata Manufacturing Co., Ltd. Lead-free solder and soldered article
US7488445B2 (en) 2000-08-07 2009-02-10 Murata Manufacturing Co., Ltd. Lead-free solder and soldered article
US7422721B2 (en) 2000-08-07 2008-09-09 Murata Manufacturing Co., Ltd Lead-free solder and soldered article
JP2002307187A (en) * 2001-02-09 2002-10-22 Taiho Kogyo Co Ltd Lead-free solder and solder joint
JP2005040847A (en) * 2003-07-25 2005-02-17 Hitachi Metals Ltd Manufacturing method of solder bowl
JP2006021205A (en) * 2004-07-06 2006-01-26 Seiko Epson Corp Lead-free solder alloy
EP2261964A4 (en) * 2008-03-05 2011-12-07 Senju Metal Industry Co Lead-free solder joint structure and solder ball
DE102009054068A1 (en) * 2009-11-20 2011-05-26 Epcos Ag Solder material for fixing an outer electrode in a piezoelectric component and piezoelectric component with a solder material
US8823245B2 (en) 2009-11-20 2014-09-02 Epcos Ag Solder material for fastening an outer electrode on a piezoelectric component and piezoelectric component comprising a solder material
WO2022172904A1 (en) * 2021-02-12 2022-08-18 日東電工株式会社 Alloy catalyst and electrode

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