JPH1012544A - 位置計測方法及び露光方法 - Google Patents

位置計測方法及び露光方法

Info

Publication number
JPH1012544A
JPH1012544A JP8185610A JP18561096A JPH1012544A JP H1012544 A JPH1012544 A JP H1012544A JP 8185610 A JP8185610 A JP 8185610A JP 18561096 A JP18561096 A JP 18561096A JP H1012544 A JPH1012544 A JP H1012544A
Authority
JP
Japan
Prior art keywords
correction
marks
mask
exposure
reticle
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8185610A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1012544A5 (enExample
Inventor
Tadaaki Shinozaki
忠明 篠崎
Nobutaka Fujimori
信孝 藤森
Toshio Matsuura
敏男 松浦
Toshinobu Morioka
利伸 森岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nikon Corp
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Priority to JP8185610A priority Critical patent/JPH1012544A/ja
Priority to US08/877,998 priority patent/US5995199A/en
Publication of JPH1012544A publication Critical patent/JPH1012544A/ja
Publication of JPH1012544A5 publication Critical patent/JPH1012544A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Liquid Crystal (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP8185610A 1996-06-26 1996-06-26 位置計測方法及び露光方法 Pending JPH1012544A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP8185610A JPH1012544A (ja) 1996-06-26 1996-06-26 位置計測方法及び露光方法
US08/877,998 US5995199A (en) 1996-06-26 1997-06-18 Position measurement method for measuring a position of an exposure mask and exposure method for transferring an image of the pattern formed in an exposure mask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8185610A JPH1012544A (ja) 1996-06-26 1996-06-26 位置計測方法及び露光方法

Publications (2)

Publication Number Publication Date
JPH1012544A true JPH1012544A (ja) 1998-01-16
JPH1012544A5 JPH1012544A5 (enExample) 2004-07-15

Family

ID=16173821

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8185610A Pending JPH1012544A (ja) 1996-06-26 1996-06-26 位置計測方法及び露光方法

Country Status (2)

Country Link
US (1) US5995199A (enExample)
JP (1) JPH1012544A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010282099A (ja) * 2009-06-05 2010-12-16 Shibaura Mechatronics Corp 貼合装置及び貼合方法
JP2013503493A (ja) * 2009-08-31 2013-01-31 ケーエルエー−テンカー・コーポレーション クリティカルディメンション均一性を決定するための一意なマークおよびその方法、ならびにウェハオーバーレイ機能と組み合わされたレチクルの位置合わせ

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW319751B (enExample) * 1995-05-18 1997-11-11 Toshiba Co Ltd
JPH09180989A (ja) 1995-12-26 1997-07-11 Toshiba Corp 露光装置および露光方法
JP2988393B2 (ja) * 1996-08-29 1999-12-13 日本電気株式会社 露光方法
JP3895851B2 (ja) * 1997-12-09 2007-03-22 株式会社東芝 マスクパターン補正方法
JP2000003855A (ja) * 1998-06-12 2000-01-07 Canon Inc 露光装置及びそれを用いたデバイスの製造方法
TW447009B (en) * 1999-02-12 2001-07-21 Nippon Kogaku Kk Scanning exposure method and scanning type exposure device
US6580491B2 (en) 2000-12-26 2003-06-17 International Business Machines Corporation Apparatus and method for compensating for distortion of a printed circuit workpiece substrate
JP2002353099A (ja) * 2001-05-22 2002-12-06 Canon Inc 位置検出方法及び装置及び露光装置及びデバイス製造方法
JP3953355B2 (ja) * 2002-04-12 2007-08-08 Ｎｅｃエレクトロニクス株式会社 画像処理アライメント方法及び半導体装置の製造方法
AU2002365049A1 (en) * 2002-12-20 2004-07-22 Yamatake Corporation System and method for detecting and correcting position deviations of an object having a curved surface
US7333217B2 (en) * 2002-12-20 2008-02-19 Yamatake Corporation System and method for detecting and correcting position deviations of an object having a curved surface
JP4294311B2 (ja) * 2002-12-27 2009-07-08 株式会社半導体エネルギー研究所 表示装置の作製方法および表示装置の加工基板
JP4767665B2 (ja) * 2005-01-05 2011-09-07 富士通セミコンダクター株式会社 レチクル検査装置およびレチクル検査方法
US8339614B2 (en) * 2005-03-25 2012-12-25 Nikon Corporation Method of measuring shot shape and mask
KR20100103225A (ko) * 2009-03-13 2010-09-27 삼성전자주식회사 반도체 소자의 제조 방법 및 이를 위한 제조 시스템
CN114721226B (zh) * 2021-01-04 2023-08-25 长鑫存储技术有限公司 光罩摆放误差校正方法和装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2773147B2 (ja) * 1988-08-19 1998-07-09 株式会社ニコン 露光装置の位置合わせ装置及び方法
US5418613A (en) * 1990-11-20 1995-05-23 Canon Kabushiki Kaisha Method and apparatus for detecting the position of a substrate having first and second patterns of different sizes
KR100273785B1 (ko) * 1991-07-18 2001-01-15 기타지마 요시토시 정합패턴을 갖는 패턴판의 묘화방법 및 그 방법에 의하여 묘화된 패턴판
JP3265512B2 (ja) * 1992-06-09 2002-03-11 株式会社ニコン 露光方法
US5464715A (en) * 1993-04-02 1995-11-07 Nikon Corporation Method of driving mask stage and method of mask alignment
JPH08293453A (ja) * 1995-04-25 1996-11-05 Canon Inc 走査型露光装置及び該装置を用いた露光方法
US5751404A (en) * 1995-07-24 1998-05-12 Canon Kabushiki Kaisha Exposure apparatus and method wherein alignment is carried out by comparing marks which are incident on both reticle stage and wafer stage reference plates
JPH09166416A (ja) * 1995-12-13 1997-06-24 Mitsubishi Electric Corp レチクルパターンの相対的位置ずれ量計測方法およびレチクルパターンの相対的位置ずれ量計測装置

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010282099A (ja) * 2009-06-05 2010-12-16 Shibaura Mechatronics Corp 貼合装置及び貼合方法
JP2013503493A (ja) * 2009-08-31 2013-01-31 ケーエルエー−テンカー・コーポレーション クリティカルディメンション均一性を決定するための一意なマークおよびその方法、ならびにウェハオーバーレイ機能と組み合わされたレチクルの位置合わせ

Also Published As

Publication number Publication date
US5995199A (en) 1999-11-30

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