JPH10116959A - Surface mounting type composite semiconductor device and manufacturing method thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To improve reliability and to extend life, by mounting two or four semiconductor devices in a mold resin for reduction of the number of external terminals, raising of mounting density, and reduction of the number of external connection places. SOLUTION: In this device, two semiconductor pellets 100 constituted as a diode are molded in a resin 40, and cathode electrodes 30 of the two semiconductor pellets are connected inside the resin, and three electrodes are led outside. And in the mold of the resin 40, the cathode electrodes 30 of the two semiconductor pellets 100 are connected and mounted onto a second led electrode 32 on the cathode side with second solders 31 in between, and first lead electrodes 22a and 22b on the anode side are connected to each anode electrode 20 of the two semiconductor pellets 100, respectively, with first solders 21 in between.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface-mounted composite semiconductor device and a method of manufacturing the same, and more particularly, to a surface-mounted composite semiconductor device in which a plurality of semiconductor devices are mounted inside the same resin, and a composite semiconductor device. It relates to a manufacturing method.

[0002]

2. Description of the Related Art Various techniques relating to a surface mount type semiconductor device in which a semiconductor pellet, for example, a diode is molded with a resin and two terminals are arranged on one plane of the resin have been proposed.

For example, as a technique for improving heat dissipation and surge resistance, a technique described in Japanese Patent Application Laid-Open No. 3-57251 is known. This prior art relates to a semiconductor device configured by mounting one pellet having a projecting electrode on the pn junction forming side on a lead frame, and mounting the pellet on the lead frame via a projecting electrode. In addition, the heat dissipation and the surge resistance are improved.

[0004] Further, as a technique related to a diode in which one semiconductor chip is mounted on a lead frame, molded with a synthetic resin and sealed, for example, Japanese Patent Laid-Open Publication No.
A technique described in Japanese Patent Application Publication No. 55-55 is known. In this conventional technique, both frame frames at both longitudinal end edges of the lead frame are connected by terminals extending from one of the frame frames, eliminating the need to provide a connection frame connecting the two frame frames, and reducing the pitch between the terminals. It can be reduced.

[0005]

However, in the semiconductor device according to the prior art described above, one element is molded in a resin, and when the semiconductor device is used as a diode to constitute a rectifying circuit of a power supply, In a full-wave rectifier circuit, two diodes are required and four external terminals are provided, and in a bridge circuit, four diodes are required and eight external terminals are provided. For this reason, when a rectifier circuit is formed using the above-described conventional semiconductor device, the number of components to be used increases, the mounting density of the power supply circuit cannot be increased, and the number of external connection points increases. There is a problem that the chip is missing and the life cannot be extended.

SUMMARY OF THE INVENTION An object of the present invention is to solve the above-mentioned problems of the prior art and to reduce the number of external terminals by mounting two or four semiconductor devices in one mold resin.
An object of the present invention is to provide a compact surface-mounted composite semiconductor device capable of increasing the packaging density, reducing the number of external connection points, improving the reliability, and extending the life, and a method of manufacturing the same.

[0007]

According to the present invention, an object of the present invention is to provide a surface mount composite semiconductor device formed by molding a plurality of semiconductor pellets in a resin, wherein two diodes are embedded in the resin. The cathode electrode of each diode is connected to the same potential inside the resin by a lead electrode, and this lead electrode is taken out as one common lead terminal outside the resin, and is not connected to the same potential.
Two respective anode electrodes are connected to the lead electrodes,
This is achieved by taking out the lead electrodes as two individual lead terminals outside the resin, and arranging all the tip portions of the three lead terminals taken out of the resin on one surface outside the resin.

The diode may be a p +, n, n +, p +, p, n + mesa diode covered with glass, a planar pn covered with a silicon dioxide film.
A diode or a planar Schottky diode covered with a silicon dioxide film is used.

[0009] The object of the present invention is to provide a method of manufacturing a surface-mounted composite semiconductor device formed by molding a plurality of semiconductor pellets in a resin, wherein one of the two frame frames connected by the connecting frame is provided. A second terminal that extends inward at any angle other than a right angle
Via a second solder, on a rectangular lead electrode of a second lead frame molded so as to have a rectangular lead electrode in which the center of the long side of the rectangle is located at the tip of the terminal in the direction perpendicular to the terminal. Mounting two diodes so as to connect the cathode electrode or the anode electrode of the two diodes separated from each other, and inward from both frame frames of the two frame frames connected by the connection frame to a direction other than a right angle. An anode electrode or a cathode of two diodes on a first lead electrode of a first lead frame molded to have first terminals extending at an arbitrary angle and having a first lead electrode at a tip of each terminal. Connecting the electrodes via a first solder, and sealing at least the two diodes, the first lead electrode, and the second lead electrode with a resin; A step of cutting the frame frames of the first lead frame and the second lead frame; and removing all of the tip portions of the two first terminals and the second lead terminals taken out of the resin to the outside of the resin. Molding to be arranged on one surface.

[0010] The object of the present invention is to provide a method of manufacturing a surface-mounted composite semiconductor device formed by molding a plurality of semiconductor pellets in a resin, wherein both of the two frame frames connected by the connecting frame are connected. A second terminal extending inward at any angle other than a right angle,
A cathode or anode of two diodes is connected via a second solder to each second lead electrode of a second lead frame molded to have a second lead electrode at the tip of each terminal. Mounting the two diodes, and a first terminal extending inwardly from one of the two frame frames connected by the connection frame at an arbitrary angle other than a right angle.
A rectangular lead electrode of a first lead frame molded to have a rectangular lead electrode in which the center of the long side of the rectangle is located in the direction perpendicular to the terminal at the tip of the terminal, The anode or cathode of each of the two diodes mounted on the
Connecting at least the two diodes, the first lead electrode, and the second lead electrode with a resin; and connecting the first lead frame and the second lead electrode to each other.
A step of cutting the frame of the lead frame, and a step of molding such that all of the two end portions of the second terminal and the first lead terminal taken out of the resin are arranged on one surface outside the resin. This is achieved by providing:

Further, the object is to provide a surface-mounted composite semiconductor device formed by molding a plurality of semiconductor pellets in a resin, wherein first, second, third and fourth diodes are embedded in the resin. The cathode electrodes of the first and second diodes are connected to each other at an equal potential via solder by a first lead electrode, and the anode electrodes of the third and fourth diodes are connected to each other at an equal potential via solder. The anode electrode of the first diode and the cathode electrode of the third diode are connected to each other at the same potential via solder by a third lead electrode, and the anode electrode of the second diode and the fourth diode are connected. Is connected to the same potential via a fourth lead electrode via solder, and the first, second, third, and fourth lead electrodes are connected to four separate leads outside the resin. Taken out as a terminal, are all tip portions of the four lead terminals were retrieved resin outside is achieved by placing on one surface of the resin outside.

[0012] The object of the present invention is to provide a method of manufacturing a surface mount type composite semiconductor device formed by molding a plurality of semiconductor pellets in a resin, wherein both of the two frame frames connected by the connecting frame are connected. A first lead frame having a lead electrode molded to have a flat portion that is long in a direction perpendicular to the terminal at each end of the first and second terminals extending inward at any angle other than a right angle; Mounting two diodes so as to connect the cathode electrodes of the first and second diodes separated from each other via solder on a lead electrode extending from one of the frame frames; At the tip of each of the third and fourth terminals, which extend inwardly from both frame frames of the frame frame at an arbitrary angle other than a right angle, the terminals are perpendicular to the terminals. The cathode electrodes of the third and fourth diodes are connected via solder to respective lead electrodes extending from both frame frames of a second lead frame having a lead electrode molded to have a long flat portion. And mounting the two diodes in the first
And the first lead frame on which the second diode is mounted and the second lead frame on which the third and fourth diodes are mounted are superimposed, and the tip of the second terminal is soldered. The anode electrode of the third diode is connected to one flat part of the lead electrode of
The anode of the fourth diode is connected to the other flat part of the lead electrode at the tip of the terminal, and the part where the fourth diode of the lead electrode at the tip of the fourth terminal is not mounted via solder. Connecting the anode electrode of the first diode to the portion of the lead electrode at the end of the third terminal where the third diode is not mounted via solder. Sealing at least the first, second, third and fourth diodes and the lead electrodes connecting the first, second, third and fourth diodes via solder with resin. Cutting the frame frames of the first lead frame and the second lead frame; and tip portions of four first, second, third and fourth terminals by lead electrodes taken out of the resin. Tree of all It is achieved by providing a step of molding so as to place on the exterior of one face.

[0013]

BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a perspective view of a semiconductor device according to a first embodiment of the present invention;

FIG. 1 is a sectional view showing the structure of a surface-mounted composite semiconductor device according to a first embodiment of the present invention, and FIG. 2 is a perspective view showing the appearance of the surface-mounted composite semiconductor device according to the first embodiment. is there. 1 and 2, 1 is an n-type semiconductor region, 2 is a p + type semiconductor region, 3 is an n + type semiconductor region,
Is a glass coating, 20 is an anode electrode, 21 is a first solder,
22a and 22b are anode lead electrodes, 30 is a cathode electrode, 31 is a second solder, 32 is a cathode lead electrode, 40 is a resin, and 100 is a semiconductor pellet.

In the surface-mounted composite semiconductor device according to the first embodiment of the present invention, two semiconductor pellets 100 configured as diodes are molded in
The cathode electrodes 32 of the semiconductor pellets are connected inside the resin, and three electrodes are led out to the outside.

The semiconductor pellet 100 molded in the resin 40 has an orientation of (111) and a resistivity of 35 to 45Ω.
B (boron) is ion-implanted into one main surface to a depth of 40 ± 5 μm so that the surface impurity concentration is 1 × 10 ¹⁹ / cm ² or more, using a silicon substrate having an n-type semiconductor region 1 of 1 cm. Or a thermal diffusion method using boron nitride as a diffusion source to form a p @ + -type semiconductor region 2 having a high impurity concentration, and a surface impurity concentration of 1.times.1 on the other main surface.
P (phosphorus) should be 45 ± 10 μm so as to be 0 ²⁰ / cm ² or more.
An n @ + -type semiconductor region 3 having a high impurity concentration is formed at a depth of m by ion implantation or thermal diffusion using phosphorus hypochlorite as a diffusion source, and a pn junction is formed from one main surface to a predetermined region. After removing a part of the oxide film on one main surface by normal thermal oxidation and photolithography so that
A mesa groove is formed by etching about 60 μm with a U01 etchant so as to expose a pn junction composed of the p + -type semiconductor region 2 and the n-type semiconductor region 1. Ingredient: Pb
O, SiO ₂ , and Al ₂ O ₃ ) are applied at 55 ± 10 μm, and a heat treatment is performed at 780 to 850 ° C. for 40 minutes in an oxygen atmosphere to form a glass film 5 fired by glass.

The semiconductor pellet 100 has an anode electrode 20 on the p + type semiconductor region 2 serving as an anode layer.
After the glass electrode 5 is formed on the n + -type semiconductor region 3 serving as the cathode layer, the cathode electrode 30 is formed in ohmic contact by electroless nickel plating or Cr-Ni-Ag vapor deposition.

That is, the semiconductor pellet 100 is a diode comprising the n-type semiconductor region 1, the p-type semiconductor region 2, the n + -type semiconductor region 3, the anode electrode 20, the cathode electrode 30, and the glass coating 5.

In the surface-mounted composite semiconductor device according to the first embodiment of the present invention, the cathodes of the two semiconductor pellets 100 are molded in an epoxy resin 40 for completely molding the semiconductor pellets 100. An electrode 30 is mounted on the second lead electrode 32 on the cathode side by being connected via a second solder 31, and the anode electrode 20 of each of the two semiconductor pellets 100.
The first lead electrode 2 on the anode side via the first solder 21
2a and 22b are connected.

As shown in FIG. 2, the surface-mounted composite semiconductor device according to the first embodiment of the present invention has the above-described two semiconductor pellets outside the resin 40 in which the semiconductor pellet 100 is molded. A second lead electrode 32 connected to the cathode electrode 30 at an equal potential and first lead electrodes 22a and 22b connected to the respective anode electrodes 20 of the two semiconductor pellets are taken out as terminals.
Each terminal is formed so as to be arranged on one plane of the resin.

The features of the above-described surface-mount type composite semiconductor device are that two diodes are mounted in one package, one cathode electrode is taken out as a common terminal for the two diodes, and the anode electrode is taken out. Two points are taken out for each diode, and a lead electrode taken out as an external terminal is directly connected to the internal semiconductor pellet. When this surface-mount type composite semiconductor device is used in, for example, a rectifier circuit such as a power supply, it is possible to reduce the number of components by reducing the number of components to one that is conventionally required as two diode components. In addition, since there is an advantage that three terminals can be used as necessary external terminals, the life of the power supply circuit can be extended and reliability can be improved.

FIG. 3 is a view for explaining a method of manufacturing the surface-mounted composite semiconductor device according to the first embodiment of the present invention shown in FIG. 1. Hereinafter, the surface-mounted composite semiconductor device will be described with reference to FIG. Will be described. In FIG. 3, 220, 32
0 is a frame frame, 221 and 321 are connected frames, 32
Reference numeral 2 denotes a second terminal, 323 denotes a lead electrode, and other reference numerals are the same as those in FIG. In the manufacturing process described below, the semiconductor pellet 100 used is the same as that shown in FIG.
Has the same configuration as that shown in FIG.

(1) First, a second terminal 322 extending inward from one of the two frame frames 320 connected by the connecting frame 321 at an arbitrary angle other than a right angle (45 degrees in the illustrated example). A second lead frame molded so as to have a rectangular lead electrode 323 in which the center of the long side of the rectangle is located in the vertical direction with respect to the second terminal 322 at the tip end is prepared. Note that the second terminal 322 is the second lead terminal in FIG. 1 (FIG. 3A).

(2) Next, the second solder 31 described with reference to FIG. 1 is formed on the prepared rectangular lead electrode 323 of the second lead frame, and the cathode 30 of the two semiconductor pellets 100 is formed thereon. Are disposed so as to be located at different positions, and heat treatment is performed to make the lead electrode 323 the second lead electrode 32, and the second lead electrode 32 and the cathode electrode 30
Are connected via the second solder 31 [FIG. 3 (b)].

(3) Thereafter, the two semiconductor pellets 10
The first solder 21 is formed on each of the anode electrodes 20 of the first and second frames 220, and inward from both of the two frame frames 220 connected by the connection frame 221 inward at an arbitrary angle other than a right angle (45 degrees in the illustrated example). First)
First molded to have lead electrodes 22a, 22b
The first lead electrodes 22a and 22b are connected to the anode electrode 20 via the first solder 21 by performing a heat treatment (FIG. 3C).

(4) Finally, the semiconductor pellet 100 is completely molded with the resin 40 so as to completely cover the semiconductor pellet 100, and the first lead frame frame 220, the second lead frame frame 320, 221 and 3
After cutting off the first 21, the first lead electrodes 22 a and 22 b and the second lead electrode 322 are processed so that the respective tips are located below the resin 40 [FIG.
(D)].

By performing the above-described steps, FIG.
Can be manufactured. After molding with the resin 40, the first lead electrodes 22 a and 22 b and the second lead electrode 322 that are outside the resin 40 are soldered. Is formed, for example, when connecting to a printed circuit board by soldering, there is an advantage that the connection is facilitated.

FIG. 4 is a sectional view showing the structure of a surface-mount type composite semiconductor device according to a second embodiment of the present invention, and the reference numerals in FIG. 4 are the same as those in FIG.

In the surface-mounted composite semiconductor device according to the second embodiment of the present invention shown in FIG. 4, two semiconductor pellets 100 are formed on the two second lead electrodes 32a and 32b on the cathode side. One first lead electrode 22 on the anode side is connected to each anode electrode 20 of the two semiconductor pellets via a first solder 21 and connected to and mounted on each cathode electrode 30 via solder 31. It is configured.

The second embodiment is different from the first embodiment described with reference to FIG. 1 in that the cathode electrodes of the two diodes are connected to one common second lead electrode. Are connected to one common first lead electrode.

FIG. 5 is a sectional view showing the structure of a surface-mount type composite semiconductor device according to a third embodiment of the present invention. In FIG. 5, 11 is a p-type semiconductor region, 12 is a p + type semiconductor region, 13 is an n + type semiconductor region, 101 is a semiconductor pellet, and other reference numerals are the same as those in FIG.

The semiconductor pellet 100 used in the first embodiment of the present invention described with reference to FIG. 1 is composed of a p + type semiconductor region 2, an n type semiconductor region 1, and an n + type The semiconductor pellet 10 used in the third embodiment of the present invention shown in FIG.
1 is a p + type semiconductor region 12, a p type semiconductor region 11, n
This is a p +, p, n + type diode composed of a + type semiconductor region 13. As shown in FIG. 5, p +, p,
Even if an n + type diode is used, a circuit configuration similar to that shown in FIG. 4, that is, a surface-mounted composite semiconductor device in which the anode electrodes of two diodes are connected to one common first lead electrode 22 is obtained. Can be.

FIG. 6 is a sectional view showing the structure of a surface-mounted composite semiconductor device according to a fourth embodiment of the present invention, and the reference numerals in FIG. 6 are the same as those in FIG.

The fourth embodiment of the present invention shown in FIG.
+, P, n + type diodes, the same circuit configuration as that shown in FIG. 1, that is, a surface-mounted composite semiconductor in which the cathode electrodes of two diodes are connected to one common second lead electrode 32 It is a device.

FIG. 7 is a view for explaining a method of manufacturing the surface-mounted composite semiconductor device according to the second embodiment of the present invention shown in FIG. 4, and the surface-mounted composite semiconductor device will be described below with reference to FIG. Will be described. In FIG. 7, 222 is the first
The terminal 223 is a rectangular lead electrode, and the other symbols are the same as those in FIG. In the manufacturing process described below, the semiconductor pellet 100 used has the same configuration as that shown in FIG.

(1) First, the second lead electrode 32a extending inward from any of the two frame frames 320 connected by the connection frame 321 at an arbitrary angle other than a right angle (in the illustrated example, 45 degrees). , 32b is prepared (FIG. 7).
(A)].

(2) Next, on each of the second lead electrodes 32a and 32b of the prepared second lead frame,
The second solder 31 described with reference to FIG. 4 is formed, and 2
The two semiconductor pellets 100 are arranged such that the cathode electrodes 30 thereof are positioned, and are subjected to a heat treatment to form the second lead electrodes 32a,
32b and the cathode electrode 30 are connected via the second solder 31 [FIG. 7 (b)].

(3) Thereafter, the two semiconductor pellets 10
The first solder 21 is formed on each of the anode electrodes 20 of the first and second frames 220, and is inwardly directed from one of the two frame frames 220 connected by the connection frame 221 to an arbitrary angle other than a right angle (45 degrees in the illustrated example). First)
Rectangular lead electrode 2 in which the center of the longer side of the rectangle is located in the vertical direction with respect to the first terminal 222 at the tip of the terminal 222
The first lead frame molded to have the first 23 is disposed so as to overlap, and is subjected to a heat treatment to connect the rectangular lead electrode 223 serving as the first lead electrode 22 and the two anode electrodes 20 via the first solder 21. The connection is made so as to have the same potential (FIG. 7C).

(4) Finally, the semiconductor pellet 100 is completely molded with the resin 40 so as to completely cover the semiconductor pellet 100, and the first lead frame frame 220, the second lead frame 320, and the connection frame 221 which are outside the resin 40 are formed. And 32
After cutting 1, the first lead electrode 22 and the second lead electrodes 32 a and 32 b are processed so that the respective tips are located below the resin 40 (FIG. 7D).

In the above description, if the first lead electrode 22 and the second lead electrodes 32a and 32b, which are outside the resin 40, are formed after the resin 40 is molded, for example, When connecting to a printed circuit board by soldering, there is an advantage that the connection is facilitated.

The semiconductor pellet used in the surface-mount type composite semiconductor device according to each of the above-described embodiments of the present invention is described as a diode having a structure in which a pn junction exposed in a mesa groove is provided with a glass film. The present invention can use semiconductor pellets having various configurations other than those described above. Hereinafter, various modifications of the semiconductor pellet will be described.

FIG. 8 is a sectional view showing a first modification of the semiconductor pellet usable in the present invention. In FIG. 8, 6
Is an insulating film, and other symbols are the same as those in FIG.

The semiconductor pellet shown in FIG. 8 is a diode formed by interposing an insulating film 6 such as a silicon oxide film between the glass film 5 and the surfaces of the p + -type semiconductor region 2 and the n-type semiconductor region 1. is there. As described above, by adding the insulating film 6 made of a silicon oxide film or the like to the semiconductor pellet shown in FIG. 1, the interface state on the semiconductor surface can be reduced, and the surface generated current flowing on the semiconductor surface can be reduced. Can be achieved.

FIG. 9 is a sectional view showing a second modification of the semiconductor pellet usable in the present invention. In FIG. 9, 4
Denotes an n + type semiconductor region having a high impurity concentration, and other reference numerals are the same as those in FIG.

The semiconductor pellet shown in FIG. 9 has a high impurity concentration of n + around the chip of the glass-coated semiconductor device described with reference to FIG. 1 and adjacent to the n-type semiconductor region 1 so as to surround the p + -type semiconductor region 2. This is a diode formed by forming the type semiconductor region 4. N + having such a high impurity concentration
By providing the type semiconductor region 4, it is possible to prevent a depletion layer extending from the main pn junction from extending to the end of the chip, thereby preventing an increase in leak current. In addition, since it is not necessary to cut the glass at the time of dicing, it is possible to reduce the withstand voltage failure due to the occurrence of cracks in the glass.

FIG. 10 is a sectional view showing a third modification of the semiconductor pellet usable in the present invention. The reference numerals in FIG. 10 are the same as those in FIGS.

The semiconductor pellet shown in FIG. 10 is different from the glass-coated semiconductor device shown in FIG. 1 in that the n + -type semiconductor region 4 having a high impurity concentration described in FIG. 9 and the silicon oxide film 6 described in FIG. It is a diode configured by being combined. By doing so, the main p
An increase in leakage current due to the depletion layer extending from the n-junction extending to the end of the chip can be prevented, and the glass does not need to be cut during dicing, so that a withstand voltage failure due to cracks in the glass can be reduced. Further, the interface state on the semiconductor surface can be reduced, and the surface generated current flowing on the semiconductor surface can be reduced.

FIGS. 11 and 12 are sectional views showing fourth and fifth modifications of the semiconductor pellet usable in the present invention.
The reference numerals in FIGS. 11 and 12 are the same as those in FIGS.

Although the surface-mounted composite semiconductor device according to the present invention described above uses a diode having the glass film 5 as a stabilizing film, the present invention uses the glass film 5 as a stabilizing film. Not only the diode
1. It is also possible to use a planar pn diode, a planar Schottky diode or the like using the silicon dioxide film 6 as a stabilizing film as shown in FIG.

FIG. 13 is a view for explaining another method of manufacturing the surface-mounted composite semiconductor device according to the first embodiment of the present invention shown in FIG.

The manufacturing method described with reference to FIG.
As shown in (d), a diagram between two frame frames 320 connected by the connection frame 321 of the second lead frame and between two frame frames 220 connected by the connection frame 221 of the first lead frame. Although the diode having the cross-sectional structure shown in FIG. 1 is connected to the cathode electrode so as to have the same potential and the surface-mounted composite semiconductor device 140 is arranged and manufactured, the manufacturing method shown in FIG. The three frame frames 320 of the lead frame are connected by two connection frames 321, and the three frame frames 220 of the first lead frame are connected by two connection frames 321. The surface-mounted composite semiconductor device 140 is manufactured by arranging diodes having the cross-sectional structure shown in FIG.

By employing the manufacturing method as shown in FIG. 13, a large number of surface-mounted composite semiconductor devices can be obtained by the same operation, and the productivity can be further improved.

FIG. 14 is a view for explaining another method of manufacturing the surface-mounted composite semiconductor device according to the second embodiment of the present invention shown in FIG.

The manufacturing method described with reference to FIG.
As shown in (d), a diagram between two frame frames 320 connected by the connection frame 321 of the second lead frame and between two frame frames 220 connected by the connection frame 221 of the first lead frame. Although the diode having the cross-sectional structure shown in FIG. 4 is connected to the anode electrode so as to have the same potential and the surface-mounted composite semiconductor device 141 is arranged and manufactured, the manufacturing method shown in FIG. The three frame frames 320 of the lead frame are connected by two connection frames 321, and the three frame frames 220 of the first lead frame are connected by two connection frames 221. The surface-mounted composite semiconductor device 141 is manufactured by arranging diodes having the cross-sectional structure shown in FIG.

By employing the manufacturing method shown in FIG. 14, a large number of surface-mounted composite semiconductor devices can be obtained in the same operation, and the productivity can be further improved.

In the manufacturing method of FIGS. 13 and 14 described above,
Although a lead frame in which three frame frames are connected is used, the present invention can also use a lead frame in which a larger number of frame frames are connected, thereby further improving productivity.

FIGS. 15 and 16 are cross-sectional views showing the structure of the surface-mounted composite semiconductor device according to the fifth and sixth embodiments of the present invention, and FIG. 17 is a surface-mounted composite semiconductor device shown in FIGS. FIG. 5 is a perspective view showing the appearance of FIG.
Is the same as

In the surface-mounted composite semiconductor device according to the fifth embodiment of the present invention shown in FIG. 15, two semiconductor pellets 100 are molded in an epoxy resin 40 for completely molding the semiconductor pellets 100. Is mounted on the second lead electrode 32 on the cathode side via a second solder 31 and is mounted on the respective anode electrodes 20 of the two semiconductor pellets 100 via the first solder 21. , First lead electrode 2 on the anode side
The configuration in which 2a and 22b are connected is the same as in FIG. 1, but the method of extracting the lead electrodes is different from that in FIG.

That is, in the fifth embodiment, one second lead electrode 32 and two first lead electrodes 22a and 22b inside the resin 40 are processed and formed such that they are all taken out in a direction perpendicular to the paper surface. And formed on one plane outside the resin 40.

By adopting such a structure, the dimension of the surface-mounted composite semiconductor device 142 in the longitudinal direction can be reduced as compared with the structure shown in FIG. 1, and a more compact surface-mounted composite semiconductor device can be obtained. Can be. In addition, the surface-mount type composite semiconductor device having such a configuration can use a lead frame that has lead electrodes extending in a direction perpendicular to the frame frame as a lead frame used in the manufacture thereof. Thus, a surface-mounted composite semiconductor device can be manufactured, and the production efficiency can be improved.

The surface-mount type composite semiconductor device according to the sixth embodiment of the present invention shown in FIG.
On the lead electrodes 32a and 32b, two semiconductor pellets 100 are connected to and mounted on the respective cathode electrodes 30 via the second solder 31, and on the respective anode electrodes 20 of the two semiconductor pellets, The configuration in which one first lead electrode 22 on the anode side is connected via the first solder 21 is the same as in the case of FIG. 4, but the method of extracting the lead electrode is different.

That is, in the sixth embodiment, the two second lead electrodes 32 a, 32 b and 1
The two first lead electrodes 22 are formed so as to be all taken out from a direction perpendicular to the plane of the paper, and are formed so as to be arranged on one plane outside the resin 40.

By adopting such a configuration, the dimension of the surface-mounted composite semiconductor device 143 in the longitudinal direction can be reduced as compared with the structure shown in FIG. 4, and a more compact surface-mounted composite semiconductor device can be obtained. Can be. Further, as in the case of FIG. 15, the surface mount type composite semiconductor device having such a configuration may use a lead frame having lead electrodes extending in a direction perpendicular to the frame frame as a lead frame used in the manufacture thereof. As a result, the surface-mounted composite semiconductor device can be manufactured at high density within the frame, and the production efficiency can be improved.

The fifth embodiment of the present invention described with reference to FIGS.
As shown in FIG. 17, the surface mount type composite semiconductor device according to the sixth embodiment has a second lead in which the cathode electrodes 30 of two semiconductor pellets are connected to the same potential outside the mold resin 40. The electrode 32 and the first lead electrodes 22a, 22b connected to the respective anode electrodes 20 of the two semiconductor pellets are taken out as terminals, or the two semiconductor pellets are provided outside the molding resin 40. A first lead electrode 22 in which the anode electrode 20 is connected at the same potential, and a second lead electrode 32 in which the cathode electrode 30 of each of the two semiconductor pellets is connected.
a and 32b are taken out as terminals. And
Each terminal is formed so as to be arranged on one plane of the resin.

The surface-mounted composite semiconductor device according to the fifth and sixth embodiments of the present invention in which the lead electrodes are extracted as described above has the same features as those described with reference to FIG. Obtainable. In other words, in these semiconductor devices, two diodes are mounted in one package, one cathode electrode or one anode electrode is taken out as a common terminal for the two diodes, and the anode electrode or the cathode electrode is respectively connected to the two diodes. It is characterized in that two of the diodes are taken out and that the lead electrodes taken out as external terminals are directly connected to the internal semiconductor pellet. And when it is used for a rectifier circuit such as a power supply, for example, it is possible to reduce the number of components by using only one diode component, which was conventionally required two, and as a necessary external terminal, Since there is an advantage that three terminals can be used, the life of the power supply circuit can be prolonged and the reliability can be improved.

Incidentally, the area of the conventional two-terminal surface-mounted diode as viewed from above is 11.04 mm ^2, which is 3 mm according to the present invention.
The area of the terminal as viewed from above the surface-mounted diode was 14.64 mm ² . Therefore, according to each embodiment of the present invention described above, 3
By using one surface-mount diode for the terminal, the mounting area can be reduced to 66% and the mounting density can be increased, as compared with the case where two conventional two-terminal surface-mount diodes are used. became.

FIG. 18 is a plan view showing an electrical configuration of a surface-mounted composite semiconductor device according to the seventh embodiment of the present invention, and FIG. 19 is a plan view of the surface-mounted composite semiconductor device according to the seventh embodiment of the present invention. FIG. 20 is a perspective view showing the appearance, and FIG. 20 is a sectional view for explaining the structure of the surface-mount type composite semiconductor device according to the seventh embodiment of the present invention. 18 to 20, reference numerals 51 to 54 denote lead electrodes forming the external terminals T1 to T4, and other reference numerals are the same as those in FIG.

In the surface-mounted composite semiconductor device according to the seventh embodiment of the present invention, the terminals extracted to the outside and the semiconductor pellet 100 mounted inside the resin 40 are formed by using diodes D1 to D4 in FIG. As shown, 4
The semiconductor pellet 100 as one diode is connected to form a bridge circuit, and four connection points are drawn out to external electrodes T1 to T4.

That is, the illustrated semiconductor device has a lead electrode 5 connected to the cathode electrodes of diodes D1 and D2.
1 is the external terminal T1, and the lead electrode 52 connected to the anode electrodes of the diodes D3 and D4 is the external terminal T2.
The lead electrode 53 connected to the anode electrode of the diode D1 and the cathode electrode of D3 is drawn out as an external terminal T3, and the lead electrode 54 connected to the anode electrode of the diode D2 and the cathode electrode of D4 is drawn out as an external terminal T4. Are configured. In addition, as a diode, FIG. 1, FIG. 4-6, FIG.
Any of the two diodes may be used.

FIG. 19 shows the appearance of the surface-mount type composite semiconductor device according to the seventh embodiment of the present invention. The terminals T1 to T5 shown in FIG. Each terminal is formed so as to be arranged on one plane of the resin.

In this surface-mounted composite semiconductor device, four diodes are connected and mounted as a bridge circuit in one package, and only four terminals are taken out as terminals used in the bridge circuit. It is characterized in that a point and a lead electrode taken out as an external terminal are directly connected to an internal semiconductor pellet. As a result, when used in, for example, a rectifier circuit of a power supply or the like, it is possible to reduce the number of components and the mounting area by reducing the number of components from four conventionally required components to four components. Since only four external terminals are required, the life of the power supply circuit can be extended and the reliability can be improved.

By the way, the area of the conventional two-terminal surface mount diode as viewed from above is 11.04 mm ² ,
The area of the terminal as viewed from above the surface-mounted diode was 25.00 mm ² . Therefore, by using one 4-terminal surface mount diode according to the embodiment of the present invention described above, the conventional two-terminal surface mount diode can be used.
Compared to using four surface mount diodes for the terminals,
The mounting area can be reduced to 56%, and the mounting density can be increased.

Referring to FIG. 20 showing the structure of the surface-mounted composite semiconductor device according to the seventh embodiment of the present invention, FIG.
20A is a cross-sectional view taken along the line AA ′ or the line BB ′ in FIG. 19, and FIGS. 20B and 20C are FIGS.
9 is a cross-sectional view taken along the line CC ′ and the line DD ′ of FIG.
In FIG. 20 (a), among the reference numerals, the reference numerals in parentheses correspond to the cross section of the BB 'portion, and the reference numerals outside the parentheses correspond to the cross section of the AA' portion. is there.

Referring to the cross section taken along the line AA ′ shown in FIG. 20A, the lead electrode 53 has one cathode electrode 3 of two semiconductor pellets 100 constituting a diode.
0 is connected via the solder 31 and the other anode electrode 2
0 is connected via the solder 21. And FIG.
The lead electrode 53 shown in the lower part of (a) is one in which the lead electrode 53 connected to the semiconductor pellet 100 inside the resin is taken out of the resin as it is and arranged on one plane of the resin. Similarly, for the cross section of the BB ′ section,
In the lead electrode 54, the lead electrode 54 connected to the semiconductor pellet 100 inside the resin is taken out of the resin as it is and is arranged on one plane of the resin.

Next, referring to the cross section taken along the line CC ′ shown in FIG. 20B, both cathode electrodes 30 of the two semiconductor pellets 100 constituting the diode are connected to the lead electrode 51 via the solder 31. And the respective anode electrodes 20 are connected to the respective lead electrodes 5 via solder 21.
3 and 54 are connected. In the lead electrode 51 shown in the lower part of FIG. 20B, the lead electrode 51 connected to the semiconductor pellet 100 inside the resin is taken out of the resin as it is and arranged on one plane of the resin.

Referring to the cross section taken along the line DD ′ shown in FIG. 20C, both anode electrodes 20 of the two semiconductor pellets 100 constituting the diode are connected to the lead electrode 52 via the solder 21. The respective cathode electrodes 30 are connected to the respective lead electrodes 5 via solders 31.
3 and 54 are connected. The lead electrode 52 shown in the lower part of FIG. 20C is one in which the lead electrode 52 connected to the semiconductor pellet 100 inside the resin is taken out of the resin as it is and arranged on one plane of the resin.

The surface-mounted composite semiconductor device according to the seventh embodiment of the present invention has a configuration as described with reference to FIG. 20, so that an anode electrode of one diode and a cathode electrode of another diode are formed inside the resin. Can be connected at least to a lead electrode having the same plane, so that not only can the manufacturing be simplified, but also the volume of resin required for mounting can be reduced.

FIG. 21 is a diagram for explaining a method of manufacturing the surface-mounted composite semiconductor device according to the seventh embodiment of the present invention described with reference to FIGS. 18 to 20. Hereinafter, the manufacturing method will be described with reference to FIG. Will be described. Although FIG. 21 does not show the cross section of the semiconductor pellet, FIG.
This is the same as that described above.

(1) First, one of the two frame frames 42 connected by the connection frame 421
A rectangular lead electrode 423a in which the center of the long side of the rectangle is located perpendicular to the terminal 422a at the tip of the terminal 422a extending inward from 0a at an arbitrary angle other than a right angle (45 degrees in the illustrated example). Molded to have
In addition, the center of the long side of the rectangle in the direction perpendicular to the terminal 422b is located at the tip of the terminal 422b extending inward from the other frame 420b at an arbitrary angle other than a right angle (45 degrees in the illustrated example). Rectangular lead electrode 42
A first lead frame molded to have 3b is prepared. Then, the solder 31 is formed on the lead electrode 423a, and the solder 31 is formed on the lead electrode 423a so that the cathode electrodes 30 of the two semiconductor pellets 100 are separated from each other and subjected to heat treatment, so that the lead electrode 423a and the cathode electrode 30 are separated. The connection is made via the solder 31 (FIG. 21A).

(2) The tips of the terminals 522a and 522b extending inward from the two frame frames 520a and 520b connected by the connecting frame 521 at an arbitrary angle other than a right angle (45 degrees in the illustrated example). A second lead frame is prepared in which the lead electrodes 523a and 523b are formed so as to have flat portions in the vertical direction to the terminals 522a and 522b. Then, the lead electrode 523
a and 523b, a solder 31 is formed, and the cathode 31 of the two semiconductor pellets 100 is disposed on the solder 31 and subjected to heat treatment, and the lead electrodes 523a and 523b and the cathode 30 of each diode are formed. Are connected via solder 31 [FIG. 21 (b)].

(3) Thereafter, cream-like solder is formed on the two semiconductor pellets 100 mounted on the first lead frame, and cream-like solder is formed separately on the lead electrode 423b. In advance, the second lead frame to which the two semiconductor pellets 100 are connected is overlapped with the frame frames 420a and 520a on the first lead frame to which the two semiconductor pellets 100 are connected, and the frame frame 420b And 520b are arranged so as to overlap. That is, the second lead frame shown in FIG. 20B is turned upside down and overlaid on the first lead frame shown in FIG. 20A. Thereafter, heat treatment is performed to connect the anode electrodes of the two semiconductor pellets 100 formed on the lead electrode 423a of the first lead frame to the lead electrodes 523a and 523b, respectively, and to connect the lead electrode 42
The anode electrodes of the two semiconductor pellets 100 formed on the lead electrodes 523a and 523b of the second lead frame are connected to the cream-like solder formed on the solder paste 3b via the solder 31 [FIG. )].

In order to prevent a displacement when the first and second lead frames are overlapped and connected in the step of FIG. 21C, FIGS.
It is desirable that the melting point of the solder used in the step (b) be higher than the melting point of the solder used in the step 21 (c).

(4) Finally, the semiconductor pellet 100 is completely molded with the resin 40 so as to completely cover the semiconductor pellet 100, and the first lead frame frames 420a and 420b, which are outside the resin 40, and the second lead frame. Frame frames 520a and 520b, and connection frame 421,
521 is cut off, and the terminal 5 taken out of the resin is removed.
1, 52, 53 and 54 are processed so that the respective tips are located below the resin 40 [FIG.
(D)].

In the above description, after molding with the resin 40, solder is formed on the lead electrodes 51 to 54 projecting out of the resin 40. For example, when the solder is connected to a printed board by soldering, The advantage that connection becomes easy can be obtained.

According to the surface-mounted composite semiconductor device and the method of manufacturing the same according to each of the above-described embodiments of the present invention, it is possible to obtain a high withstand voltage, low leakage current, and highly reliable surface-mounted composite semiconductor device. In addition, such a semiconductor device could be manufactured with high yield.

That is, the surface-mount type composite semiconductor device according to each embodiment of the present invention has a withstand voltage of about 800 ± 100.
V, and the leak current is 1 at 400 V applied in the reverse direction.
It was 0 nA or less, and it was confirmed that the blocking characteristics were extremely excellent. Further, a high temperature reverse bias test (DC4
(00 V, junction temperature 150 ° C., time 1000 h), it was confirmed that the leakage current was increased by only 50% of the initial value, indicating high reliability.

[0087]

As described above, according to the present invention, the surface-mounted composite semiconductor device according to the present invention is constructed by taking out a common terminal of a plurality of diodes as one lead electrode. Can reduce the number of external terminals and the number of circuit components, thereby increasing the reliability of the circuit and improving the mounting density. Further, according to the manufacturing method, it is possible to manufacture a surface-mounted composite semiconductor device with high yield and high reliability.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a configuration of a surface-mounted composite semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a perspective view showing the appearance of the surface-mounted composite semiconductor device according to the first embodiment.

FIG. 3 is a diagram illustrating a method for manufacturing the surface-mounted composite semiconductor device according to the first embodiment of the present invention.

FIG. 4 is a cross-sectional view illustrating a configuration of a surface-mounted composite semiconductor device according to a second embodiment of the present invention.

FIG. 5 is a cross-sectional view illustrating a configuration of a surface-mounted composite semiconductor device according to a third embodiment of the present invention.

FIG. 6 is a cross-sectional view illustrating a configuration of a surface-mounted composite semiconductor device according to a fourth embodiment of the present invention.

FIG. 7 is a view for explaining a method of manufacturing the surface-mounted composite semiconductor device according to the second embodiment of the present invention shown in FIG. 4;

FIG. 8 is a sectional view showing a first modified example of a semiconductor pellet usable in the present invention.

FIG. 9 is a sectional view showing a second modification of the semiconductor pellet usable in the present invention.

FIG. 10 is a sectional view showing a third modification of the semiconductor pellet usable in the present invention.

FIG. 11 is a sectional view showing a fourth modification of the semiconductor pellet usable in the present invention.

FIG. 12 is a sectional view showing a fifth modification of the semiconductor pellet usable in the present invention.

FIG. 13 is a view illustrating another method of manufacturing the surface-mounted composite semiconductor device according to the first embodiment of the present invention shown in FIG. 1;

FIG. 14 is a view illustrating another method of manufacturing the surface-mounted composite semiconductor device according to the second embodiment of the present invention shown in FIG. 4;

FIG. 15 is a cross-sectional view illustrating a configuration of a surface-mounted composite semiconductor device according to a fifth embodiment of the present invention.

FIG. 16 is a sectional view showing a configuration of a surface-mount type composite semiconductor device according to a sixth embodiment of the present invention.

FIG. 17 is a perspective view showing the appearance of the surface-mounted composite semiconductor device of the fifth and sixth embodiments of the present invention shown in FIGS. 15 and 16;

FIG. 18 is a plan view showing an electrical configuration of a surface-mount type composite semiconductor device according to a seventh embodiment of the present invention.

FIG. 19 is a perspective view showing an appearance of a surface-mount type composite semiconductor device according to a seventh embodiment of the present invention.

FIG. 20 is a cross-sectional view illustrating a structure of a surface-mounted composite semiconductor device according to a seventh embodiment of the present invention.

FIG. 21 is a diagram illustrating a method of manufacturing a surface-mounted composite semiconductor device according to a seventh embodiment of the present invention.

[Explanation of symbols]

REFERENCE SIGNS LIST 1 n-type semiconductor region 2 p + -type semiconductor region 3, 4 n + -type semiconductor region 5 glass coating 6 silicon oxide film 20 anode electrode 21 a, 21 b first solder 22, 22 a, 22 b anode-side lead electrode 30 cathode electrode 31 a, 31 b second Solder 32, 32a, 32b Cathode-side lead electrode 40 Resin 100, 101 Semiconductor pellet 140, 141, 142, 143 Surface mount composite semiconductor device 220, 320, 420, 520 Frame 221 321 421 521 Connecting frame

 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Hitoshi Matsuzaki 3-1-1 Sakaicho, Hitachi City, Ibaraki Prefecture Inside Hitachi, Ltd. Hitachi Plant (72) Inventor Atsushi Numata 3-chome Bentencho, Hitachi City, Ibaraki Prefecture No. 2 Inside Hitachi Haramachi Electronics Co., Ltd.

Claims (14)

[Claims] 1. A surface-mounted composite semiconductor device formed by molding a plurality of semiconductor pellets inside a resin,
Two diodes are embedded in the resin, and the cathode electrodes of each diode are connected to the same potential inside the resin by a lead electrode, and this lead electrode is taken out as one common lead terminal outside the resin and is connected to the same potential. The two anode electrodes which are not connected are connected to a lead electrode, and this lead electrode is taken out as two separate lead terminals outside the resin and is taken out outside the resin.
A surface-mounted composite semiconductor device, characterized in that the tip portions of two lead terminals are all arranged on one surface outside the resin. 2. A surface-mounted composite semiconductor device formed by molding a plurality of semiconductor pellets inside a resin.
Two diodes are embedded in the resin, and the anode electrodes of each diode are connected to the same potential inside the resin by a lead electrode. The lead electrode is taken out as one common lead terminal outside the resin and is connected to the same potential. Each of the two unconnected cathode electrodes is connected to a lead electrode, and this lead electrode is taken out as two separate lead terminals outside the resin and is taken out outside the resin.
A surface-mounted composite semiconductor device, characterized in that the tip portions of two lead terminals are all arranged on one surface outside the resin. 3. A surface-mounted composite semiconductor device formed by molding a plurality of semiconductor pellets inside a resin,
Two diodes are embedded in the resin, and the cathode electrodes of the two diodes are connected via a second solder to one second lead electrode having at least the same horizontal plane,
Two first lead electrodes are connected to the respective anode electrodes of the two diodes via a first solder, and
The lead electrode and the first lead electrode are made of the same material and extended to the outside of the resin, and the tip portions of the second lead electrode and the first lead electrode taken out of the resin are all arranged on one surface outside the resin. A surface-mounted composite semiconductor device characterized by the above-mentioned. 4. A surface-mounted composite semiconductor device formed by molding a plurality of semiconductor pellets inside a resin,
Two diodes are embedded in the resin, and respective cathode electrodes of the two diodes are connected via a second solder to at least two second lead electrodes having the same horizontal plane, and are connected to respective anode electrodes of the two diodes. Is connected to one first lead electrode via a first solder, the second lead electrode and the first lead electrode are extended to the outside of the resin with the same material, and the second lead electrode and the A surface-mounted composite semiconductor device, characterized in that the tip portions of one lead electrode are all disposed on one surface outside the resin. 5. A surface-mounted composite semiconductor device formed by molding a plurality of semiconductor pellets inside a resin,
Two diodes are embedded in the resin, and anode electrodes of the two diodes are connected via a first solder on one first lead electrode having at least the same horizontal plane,
Two second lead electrodes are connected to the respective cathode electrodes of the two diodes via a second solder, and
The lead electrode and the second lead electrode are made of the same material and extended to the outside of the resin, and the leading end portions of the first lead electrode and the second lead electrode taken out of the resin are all arranged on one surface outside the resin. A surface-mounted composite semiconductor device characterized by the above-mentioned. 6. A surface-mounted composite semiconductor device formed by molding a plurality of semiconductor pellets inside a resin,
Two diodes are embedded in the resin, and the respective anode electrodes of the two diodes are connected via first solder to the two first lead electrodes having at least the same horizontal plane, and the respective anode electrodes of the two diodes are connected to the respective cathode electrodes of the two diodes. Is connected to two second lead electrodes via a second solder, the first lead electrode and the second lead electrode are extended to the outside of the resin with the same material, and the first lead electrode and the second 2. A surface-mounted composite semiconductor device, characterized in that the tip portions of the two lead electrodes are all arranged on one surface outside the resin. 7. The diode has a pair of main surfaces, and diffuses impurities of a conductivity type opposite to the substrate from one main surface of a first semiconductor region to be a semiconductor substrate of the first conductivity type to form a second semiconductor. A region is formed, a mesa-shaped groove is provided in a predetermined region from one main surface so as to expose a pn junction composed of a first semiconductor region and a second semiconductor region, and a glass film is formed on the mesa portion. A third semiconductor region is formed from the other main surface of the first semiconductor region by diffusing impurities of the same conductivity type with a higher impurity concentration than the first semiconductor region, and a third semiconductor region is formed on the exposed surface of the second semiconductor region on one main surface. A diode in which one electrode is formed and a second electrode is formed on an exposed surface of the third semiconductor region on the other main surface, or a silicon dioxide film is interposed between a mesa portion of the diode and a glass film. Daioh composed by 2. The method of claim 1, wherein
7. The surface-mounted composite semiconductor device according to any one of items 6 to 6. 8. The diode has a pair of main surfaces, and diffuses impurities of a conductivity type opposite to the substrate from one main surface of a first semiconductor region to be a semiconductor substrate of the first conductivity type to form a second semiconductor. A region is selectively formed, a fourth semiconductor region having a higher impurity concentration than the first semiconductor region is formed via the first semiconductor region so as to surround the second semiconductor region, and a fourth semiconductor region is formed from one main surface to a predetermined region. A mesa-shaped groove is provided so that a pn junction composed of the first semiconductor region and the second semiconductor region is exposed, a glass film is formed on the mesa portion, and the first semiconductor region extends from the other main surface of the first semiconductor region. A third semiconductor region in which a higher impurity concentration impurity of the same conductivity type is diffused is formed, and the first semiconductor surface is exposed on the exposed surface of the second semiconductor region on one main surface.
An electrode is formed, and a second electrode is formed on an exposed surface of the third semiconductor region on the other main surface, or a silicon dioxide film is interposed between a mesa portion of the diode and a glass film. The surface-mounted composite semiconductor device according to any one of claims 1 to 6, wherein the diode is configured as follows. 9. The diode has a pair of main surfaces, and diffuses impurities of a conductivity type opposite to that of the substrate from one main surface of a first semiconductor region to be a semiconductor substrate of the first conductivity type to form a second semiconductor. A region is selectively formed, and a stabilizing film such as a silicon dioxide film is formed on a surface of the first semiconductor region exposed on one main surface and a pn junction surface including the first semiconductor region and the second semiconductor region. From the other main surface of one semiconductor region to the first
A third semiconductor region in which impurities of the same conductivity type are diffused at a higher impurity concentration than the semiconductor region is formed, and a second semiconductor region on one main surface is formed.
7. A diode comprising a first electrode formed on an exposed surface of a semiconductor region and a second electrode formed on an exposed surface of a third semiconductor region on the other main surface. A surface-mounted composite semiconductor device according to any one of the above. 10. The diode has a pair of main surfaces, and diffuses an impurity of a conductivity type opposite to the substrate from one of the main surfaces of a first semiconductor region to be a semiconductor substrate of the first conductivity type to form a diode therein. An annular second semiconductor region in which the surface of one semiconductor region is exposed is selectively formed, and an outer peripheral portion of the second semiconductor region exposed on one main surface, a pn junction surface including the first semiconductor region, and a second semiconductor region. A stabilizing film such as a silicon dioxide film is formed on the surface of the first semiconductor region adjacent to the outer peripheral portion, and diffuses impurities of the same conductivity type from the other main surface of the first semiconductor region at a higher impurity concentration than the first semiconductor region. A third semiconductor region is formed, which is in ohmic contact with the inner peripheral surface of the second semiconductor region on one main surface and is in Schottky contact with the exposed surface of the first semiconductor region adjacent to the inner peripheral portion of the second semiconductor region. First
7. A diode comprising an electrode and a second electrode in ohmic contact with an exposed surface of the third semiconductor region on the other main surface.
The surface-mounted composite semiconductor device according to any one of the above. 11. A method for manufacturing a surface-mounted composite semiconductor device formed by molding a plurality of semiconductor pellets inside a resin, wherein: a frame is formed inward from one of two frame frames connected by a connecting frame. A second terminal extending at an arbitrary angle other than a right angle is formed so as to have a rectangular lead electrode in which the center of the long side of the rectangle is located at the tip of the second terminal in the direction perpendicular to the terminal. Mounting two diodes on a rectangular lead electrode of the lead frame so as to connect the cathode electrode or the anode electrode of the two diodes separated from each other via a second solder; and A first terminal extending inwardly from both frame frames of the two frame frames at an arbitrary angle other than a right angle, and a first terminal at a tip end of each terminal.
Connecting an anode electrode or a cathode electrode of two diodes via a first solder on a first lead electrode of a first lead frame molded to have a lead electrode; and at least the two diodes and a first lead. A step of sealing the electrode and the second lead electrode with a resin; a step of cutting the frame of the first lead frame and the second lead frame; and a step of cutting the two first terminals and the second terminal taken out of the resin. Molding the entirety of the lead terminals so as to be disposed on one surface outside the resin. 12. A method of manufacturing a surface-mounted composite semiconductor device formed by molding a plurality of semiconductor pellets inside a resin, wherein inward from both frame frames of the two frame frames connected by the connecting frame, A second terminal extending at an arbitrary angle other than a right angle;
Mounting two diodes on each second lead electrode of a second lead frame molded to have a lead electrode so as to connect a cathode electrode or an anode electrode of the two diodes via a second solder; A first terminal extending inwardly from one of the two frame frames connected by the connecting frame at an arbitrary angle other than a right angle, and having a rectangular shape perpendicular to the terminal at the tip of the first terminal; Each of the anode electrodes of the two diodes mounted on the second lead frame is connected to the rectangular lead electrode of the first lead frame molded to have the rectangular lead electrode in which the center of the long side is located. Connecting a cathode electrode via a first solder; and connecting at least the two diodes, a first lead electrode, and a second lead electrode. A step of sealing with a grease; a step of cutting the frame frames of the first lead frame and the second lead frame; and all of the two second terminals and the end portions of the first lead terminals taken out of the resin. Molding the semiconductor device so as to be disposed on one surface outside the resin. 13. A surface-mounted composite semiconductor device formed by molding a plurality of semiconductor pellets in a resin, wherein first, second, third, and fourth diodes are embedded in the resin, and the first and second diodes are embedded in the resin. The cathode electrode of the second diode is connected to the same potential via the first lead electrode via solder, and the anode electrodes of the third and fourth diodes are connected to the same potential via the second lead electrode via solder. The anode electrode of the first diode and the cathode electrode of the third diode are connected to each other at an equal potential via solder by a third lead electrode, and the anode electrode of the second diode and the cathode electrode of the fourth diode are connected to each other. Are connected to each other at the same potential via solder by a fourth lead electrode, and the first, second,
The third and fourth lead electrodes are taken out as four individual lead terminals outside the resin, and the four lead electrodes taken out of the resin are taken out.
A surface-mounted composite semiconductor device, characterized in that the tip portions of two lead terminals are all arranged on one surface outside the resin. 14. A method of manufacturing a surface-mount type composite semiconductor device formed by molding a plurality of semiconductor pellets inside a resin, wherein inwardly from both frame frames of the two frame frames connected by the connecting frame, One frame of a first lead frame having a lead electrode molded so as to have a flat portion elongated in a direction perpendicular to the terminal at each of the distal ends of the first and second terminals extending at an arbitrary angle other than a right angle Mounting the two diodes so as to connect the cathode electrodes of the first and second diodes separated from each other via solder on a lead electrode extending from the lead frame, and the two frame frames connected by the connection frame A flat portion that extends inward from the frame of the third terminal at an arbitrary angle other than a right angle and that is perpendicular to the terminal at each of the distal ends of the third and fourth terminals. A second lead frame having a molded lead electrodes to have, as on each of the lead electrodes extending from both framework via the solder connecting the cathode electrode of the third and fourth diodes 2
Mounting the first and second diodes, the first lead frame on which the first and second diodes are mounted, and the second lead frame on which the third and fourth diodes are mounted. The anode electrode of the third diode is connected to one flat portion of the lead electrode at the tip of the second terminal via the second terminal, and is connected to the other flat portion of the lead electrode at the tip of the second terminal via the solder. 4th
The anode electrode of the second diode is connected to the portion of the lead electrode at the tip of the fourth terminal where the fourth diode is not mounted via solder, and the anode electrode of the second diode is connected via solder. Connecting the anode electrode of the first diode to the portion of the lead electrode at the tip of the third terminal where the third diode is not mounted; and at least the first, second, third and fourth diodes And a step of sealing a lead electrode connecting the first, second, third and fourth diodes via solder with a resin, and a frame of the first lead frame and the second lead frame. A step of cutting the frame, and four first steps by a lead electrode taken out of the resin.
Molding the entirety of the tip portions of the second, third and fourth terminals so as to be disposed on one surface outside the resin.