JPH10116958A - Memory system - Google Patents

Memory system

Info

Publication number
JPH10116958A
JPH10116958A JP28770696A JP28770696A JPH10116958A JP H10116958 A JPH10116958 A JP H10116958A JP 28770696 A JP28770696 A JP 28770696A JP 28770696 A JP28770696 A JP 28770696A JP H10116958 A JPH10116958 A JP H10116958A
Authority
JP
Japan
Prior art keywords
memory
chips
printed wiring
wiring board
semiconductor wafer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP28770696A
Other languages
Japanese (ja)
Inventor
Koichi Ikeda
孝市 池田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NSC Co Ltd
Original Assignee
Nigata Semitsu Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nigata Semitsu Co Ltd filed Critical Nigata Semitsu Co Ltd
Priority to JP28770696A priority Critical patent/JPH10116958A/en
Publication of JPH10116958A publication Critical patent/JPH10116958A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554External layer
    • H01L2224/0555Shape
    • H01L2224/05552Shape in top view
    • H01L2224/05554Shape in top view being square
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49175Parallel arrangements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01004Beryllium [Be]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Wire Bonding (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)

Abstract

PROBLEM TO BE SOLVED: To mount memory chips on a printed circuit board with a high mounting density. SOLUTION: A plurality of bare chips 1 for memory are cut out from continuous regions of a semiconductor wafer, and then closely contacted with a printed circuit board 2 without being packaged. When the chips 1 are cut out from the semiconductor wafer, preliminary bare chips 1 are also cut out together with primary bare chips 1, so that, even if one of the chip 1 is faulty, the entire system of such memory chips 1 can normally operate. Thereby, the chips can be mounted at a high density and a percent defective at the time of manufacturing the memory system can be reduced.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、プリント配線板上
に複数のメモリチップを実装したメモリシステムに関す
る。
The present invention relates to a memory system in which a plurality of memory chips are mounted on a printed wiring board.

【0002】[0002]

【従来の技術】携帯電話や電子手帳などの携帯機器にお
いては、製品の小型化と消費電力の低減が製品の売り上
げを左右する重要な要素となっている。このため、従来
は多機能のLSIを用いて部品の実装点数を減らした
り、多層のプリント配線板に両面実装して小型化を図る
などしていた。また、LSIのパッケージを取り外した
ベアチップを直接プリント配線板に実装するいわゆるフ
リップチップ実装によって実装密度の向上を図ることも
一般化してきた。
2. Description of the Related Art In portable devices such as cellular phones and electronic organizers, miniaturization of products and reduction of power consumption are important factors influencing product sales. For this reason, conventionally, the number of components to be mounted has been reduced by using a multifunctional LSI, and the size has been reduced by mounting both sides on a multilayer printed wiring board. It has also been generalized to improve the mounting density by so-called flip-chip mounting in which a bare chip from which an LSI package is removed is directly mounted on a printed wiring board.

【0003】ところで、携帯機器などの大抵の電子機器
はCPUを内部に含んでおり、CPUを動かすプログラ
ムの出来不出来によって製品の性能が決まることが多
い。また、機能の複雑多様化に伴ってプログラムの量も
膨大になりつつあり、大量のメモリを搭載しなければ所
望の処理速度が得られない場合も増えてきた。
By the way, most electronic devices such as portable devices include a CPU therein, and the performance of a product is often determined by a failure of a program for operating the CPU. In addition, the amount of programs has become enormous along with the diversification of functions, and a desired processing speed cannot be obtained unless a large amount of memory is mounted.

【0004】[0004]

【発明が解決しようとする課題】しかしながら、大量の
メモリをプリント配線板に実装しようとすると、プリン
ト配線板が大型化するという問題がある。このため、大
量のメモリを必要とするコンピュータなどの電子機器で
は、複数のメモリチップを小型のプリント配線板に実装
したSIMM(Single In-line Memory Module)をメイン
基板に垂直あるいは斜めに取り付けるのが一般的であ
る。ところが、SIMMは市販のメモリチップを構成部
品として使用するため、SIMMの外形寸法を小さくす
るには限界があり、メイン基板もSIMMの外形寸法や
搭載数に応じて大きくせざるを得ない。
However, when a large amount of memory is mounted on a printed wiring board, there is a problem that the printed wiring board becomes large. For this reason, in electronic devices such as computers that require a large amount of memory, it is necessary to mount a SIMM (Single In-line Memory Module) in which multiple memory chips are mounted on a small printed circuit board vertically or diagonally to the main board. General. However, since the SIMM uses a commercially available memory chip as a component, there is a limit in reducing the outer dimensions of the SIMM, and the main substrate must be increased according to the outer dimensions of the SIMM and the number of SIMMs to be mounted.

【0005】本発明は、このような点に鑑みて創作され
たものであり、その目的はプリント配線板上にメモリチ
ップを高密度実装することができるメモリシステムを提
供することにある。
The present invention has been made in view of the above points, and an object of the present invention is to provide a memory system capable of mounting a memory chip on a printed wiring board at a high density.

【0006】[0006]

【課題を解決するための手段】上述した課題を解決する
ために、請求項1のメモリシステムは、半導体ウエハ上
の連続した領域に形成された複数のメモリチップを切り
出し、切り出した複数のメモリチップを1個1個に分割
せずに、密着させた状態でプリント配線板に実装する。
これにより、プリント配線板上の実装面積を小さくで
き、高密度実装が可能となる。
According to a first aspect of the present invention, there is provided a memory system comprising: a plurality of memory chips formed in a continuous area on a semiconductor wafer; Is mounted on a printed wiring board in a state of being closely adhered without being divided one by one.
As a result, the mounting area on the printed wiring board can be reduced, and high-density mounting becomes possible.

【0007】請求項2に記載の発明は、メモリチップの
入出力パッドとプリント配線板のパッドとをボンディン
グワイヤで接続する。
According to a second aspect of the present invention, the input / output pads of the memory chip and the pads of the printed wiring board are connected by bonding wires.

【0008】請求項3に記載の発明は、メモリチップの
形状を矩形にし、矩形を構成する4辺のうち2辺に沿っ
てメモリチップの入出力パッドを形成する。形状を矩形
にすることで、半導体ウエハ上により多くのメモリチッ
プを形成でき、また、2辺に沿って入出力パッドを形成
することで、ボンディングワイヤによる接続が行いやす
くなる。
According to a third aspect of the present invention, the memory chip has a rectangular shape, and input / output pads of the memory chip are formed along two of the four sides constituting the rectangle. By making the shape rectangular, more memory chips can be formed on the semiconductor wafer, and by forming the input / output pads along two sides, it becomes easier to connect by bonding wires.

【0009】請求項4に記載の発明は、プリント配線板
に予備用のメモリチップを余計に実装するため、一部の
メモリチップが不良になっても、メモリシステム全体を
不良として扱わなくて済み、メモリシステムの製造時の
不良率が低減する。
According to the present invention, since an extra memory chip is mounted on the printed wiring board, even if some of the memory chips become defective, the entire memory system does not have to be treated as defective. In addition, the defective rate at the time of manufacturing the memory system is reduced.

【0010】[0010]

【発明の実施の形態】以下、本発明を適用したメモリシ
ステムについて、図面を参照しながら具体的に説明す
る。
DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a memory system to which the present invention is applied will be specifically described with reference to the drawings.

【0011】図1は本実施形態のメモリシステムの概略
を示す平面図、図2はメモリシステムの一部を拡大して
示した図である。図1に示すように、本実施形態のメモ
リシステムは、半導体ウエハ上に形成されたメモリ用ベ
アチップ1をパッケージングすることなくプリント配線
板2上に実装するものである。プリント配線板2の一端
側Pは、不図示のメイン基板のコネクタに取り付け可能
な形状に加工されており、この部分にはメイン基板のコ
ネクタと導通を取るための複数のパターン3が形成され
ている。これらパターン3のそれぞれは、図2に示すよ
うに、プリント配線板2上のパッド4とボンディングワ
イヤ5を介してメモリ用ベアチップ1の入出力パッド6
と接続されている。
FIG. 1 is a plan view schematically showing a memory system according to this embodiment, and FIG. 2 is an enlarged view showing a part of the memory system. As shown in FIG. 1, the memory system according to the present embodiment mounts a memory bare chip 1 formed on a semiconductor wafer on a printed wiring board 2 without packaging. One end side P of the printed wiring board 2 is processed into a shape attachable to a connector on a main board (not shown), and a plurality of patterns 3 for conducting with the connector on the main board are formed in this portion. I have. As shown in FIG. 2, each of these patterns 3 is connected to a pad 4 on the printed wiring board 2 and an input / output pad 6 of the memory bare chip 1 through a bonding wire 5.
Is connected to

【0012】図3は半導体ウエハ7上に形成されたメモ
リ用ベアチップ1の概略を示す平面図である。同図に示
すように、メモリ用ベアチップ1のそれぞれはほぼ矩形
状に形成されており、対向する外縁側2辺に沿って外部
接続用の入出力パッド6が形成されている。これら矩形
状のメモリ用ベアチップ1の一つ一つが、通常はそれぞ
れ個別にパッケージングされるのに対し、本実施形態で
は、これらメモリ用ベアチップ1をパッケージングする
ことなくプリント配線板2上に実装する。
FIG. 3 is a plan view schematically showing the memory bare chip 1 formed on the semiconductor wafer 7. As shown in the figure, each of the memory bare chips 1 is formed in a substantially rectangular shape, and input / output pads 6 for external connection are formed along two opposing outer edges. Normally, each of the rectangular memory bare chips 1 is individually packaged, but in the present embodiment, these memory bare chips 1 are mounted on the printed wiring board 2 without packaging. I do.

【0013】図4はメモリ用ベアチップ1の入出力パッ
ド6の信号内容を説明する図であり、1M×4ビットの
DRAMの例を示している。同図において、A0 〜A9
はアドレス端子、I/O1 〜I/O4 はデータ端子、W
Eはライトイネーブル端子、OEはアウトプットイネー
ブル端子を示している。
FIG. 4 is a diagram for explaining the signal content of the input / output pad 6 of the memory bare chip 1, and shows an example of a 1M × 4 bit DRAM. In the figure, A0 to A9
Is an address terminal, I / O1 to I / O4 are data terminals, W
E indicates a write enable terminal, and OE indicates an output enable terminal.

【0014】図5はメモリ用ベアチップ1内部のブロッ
ク構成を示す図である。同図に示すように、メモリ用ベ
アチップ1は、アドレス端子A0 〜A9 が接続されるア
ドレスバッファ11と、入力されたアドレスをデコード
するデコーダ12と、アドレスバッファ11とデコーダ
12を制御するクロックジェネレータ13と、RAMセ
ル14と、ゲート15と、I/Oバッファ16とで構成
される。
FIG. 5 is a diagram showing a block configuration inside the memory bare chip 1. As shown in FIG. As shown in FIG. 1, a memory bare chip 1 includes an address buffer 11 to which address terminals A0 to A9 are connected, a decoder 12 for decoding an input address, and a clock generator 13 for controlling the address buffer 11 and the decoder 12. , A RAM cell 14, a gate 15, and an I / O buffer 16.

【0015】半導体ウエハ7上には、図4、5に詳細構
成を示す構造のメモリ用ベアチップ2が密着して形成さ
れており、半導体ウエハ7からメモリ用ベアチップ1を
切り出す際は、半導体ウエハ7上の連続した領域に形成
されている複数のメモリ用ベアチップ1を切り出す。ま
た、メモリ用ベアチップ1の入出力パッド6が図3に示
すようになるべく2列に並ぶように切り出す。このよう
に切り出すと、プリント配線板2に実装する際のボンデ
ィングワイヤ5の取付方向および取付間隔が一定になる
ため、ボンディングワイヤ5の接続が容易になる。ただ
し、半導体ウエハ7の外周付近は図3の方向に切り出せ
ないことがあり、その場合には例えば図6のように切り
出せばよい。
A memory bare chip 2 having a structure shown in detail in FIGS. 4 and 5 is formed on a semiconductor wafer 7 in close contact therewith. When the memory bare chip 1 is cut from the semiconductor wafer 7, the semiconductor wafer 7 A plurality of memory bare chips 1 formed in the upper continuous area are cut out. The input / output pads 6 of the memory bare chip 1 are cut out so as to be arranged in two rows as shown in FIG. When cut out in this manner, the mounting direction and the mounting interval of the bonding wires 5 when mounted on the printed wiring board 2 become constant, so that the connection of the bonding wires 5 becomes easy. However, the vicinity of the outer periphery of the semiconductor wafer 7 may not be cut out in the direction shown in FIG. 3, and in such a case, it may be cut out as shown in FIG.

【0016】半導体ウエハ7から切り出した複数のメモ
リ用ベアチップ1はプリント配線板2上にCOB(Chip
On Board )実装される。すなわち、各メモリ用ベアチ
ップ1の入出力パッド6のそれぞれは、図2に示すよう
にボンディングワイヤ5によってプリント配線板2上の
パッド4と接続される。
A plurality of memory bare chips 1 cut out from a semiconductor wafer 7 are printed on a printed wiring board 2 by COB (Chip).
On Board) Implemented. That is, each of the input / output pads 6 of each memory bare chip 1 is connected to the pads 4 on the printed wiring board 2 by bonding wires 5 as shown in FIG.

【0017】図1の例では、半導体ウエハ7上に形成さ
れた9個のメモリ用ベアチップ1をプリント配線板2に
実装する例を示しているが、9個のうちの1個(図3の
斜線部分)は予備として用いられる。これにより、予備
のメモリ用ベアチップ1を除く8個のメモリ用ベアチッ
プ1のうちの1個が不良であっても、予備のメモリ用ベ
アチップ1を代わりに用いることにより、メモリシステ
ムは正常に動作する。すなわち、一部のメモリ用ベアチ
ップ1が不良であっても、メモリシステム全体を不良と
して扱わなくて済むため、メモリシステムの製造時の不
良率を低減できる。
FIG. 1 shows an example in which nine memory bare chips 1 formed on a semiconductor wafer 7 are mounted on a printed wiring board 2. One of the nine bare chips 1 (FIG. The hatched portion) is used as a spare. Thereby, even if one of the eight memory bare chips 1 except the spare memory bare chip 1 is defective, the memory system operates normally by using the spare memory bare chip 1 instead. . That is, even if some of the memory bare chips 1 are defective, it is not necessary to treat the entire memory system as defective, so that the defective rate at the time of manufacturing the memory system can be reduced.

【0018】なお、予備のメモリ用ベアチップ1以外の
メモリ用ベアチップ1のいずれかが不良の場合には、例
えばプリント配線板2上の不図示のジャンパー線の接続
を切り換えることにより、使用するメモリ用ベアチップ
1を切り換えればよい。また1列に並んだ9個のメモリ
用ベアチップ1の中央付近に位置するメモリ用ベアチッ
プ1を予備用として用いればメモリ用ベアチップ1の切
り換えが容易になるため都合がよい。
If any of the memory bare chips 1 other than the spare memory bare chip 1 is defective, for example, the connection of a jumper wire (not shown) on the printed wiring board 2 is switched so that the memory bare chip 1 is not used. The bare chip 1 may be switched. If the memory bare chips 1 located near the center of the nine memory bare chips 1 arranged in a line are used as spares, the switching of the memory bare chips 1 is facilitated, which is convenient.

【0019】図1の例では、プリント配線板2上に9個
のメモリ用ベアチップ1を実装し、そのうちの8個のメ
モリ用ベアチップ1を実質的に使用するため、各メモリ
用ベアチップ1が1M×4ビットのDRAMである場合
は、メモリシステム全体でのメモリ容量は32ビット構
成の4Mバイトになる。
In the example of FIG. 1, nine memory bare chips 1 are mounted on a printed wiring board 2, and eight of the memory bare chips 1 are substantially used. In the case of a × 4 bit DRAM, the memory capacity of the entire memory system is 4 Mbytes in a 32-bit configuration.

【0020】このように、本実施形態のメモリシステム
は、半導体ウエハ7上に形成されたメモリ用ベアチップ
1を個別に分離せずに複数個組にして切り出してそのま
まプリント配線板1上に実装するため、パッケージング
されたメモリを実装する場合に比べてはるかに高密度実
装することができる。このため、コンピュータ機器など
のように大量のメモリを消費する場合に特に有効とな
る。また、各メモリ用ベアチップ1をパッケージングす
る必要がないため、部品コストを低減できる。また、メ
モリシステム内に予備用のメモリ用ベアチップ1を設け
るため、一部のメモリ用ベアチップが不良でもメモリシ
ステム全体を不良として扱わなくて済み、メモリシステ
ムの製造時の不良率が低減する。
As described above, in the memory system according to the present embodiment, the memory bare chips 1 formed on the semiconductor wafer 7 are cut out into a plurality of sets without being individually separated and mounted on the printed wiring board 1 as they are. Therefore, it is possible to mount the memory at a much higher density than when mounting a packaged memory. This is particularly effective when a large amount of memory is consumed, such as in computer equipment. Also, since it is not necessary to package each memory bare chip 1, the cost of parts can be reduced. In addition, since the spare memory bare chip 1 is provided in the memory system, even if some of the memory bare chips are defective, the entire memory system does not need to be treated as defective, and the defective rate at the time of manufacturing the memory system is reduced.

【0021】図1〜5では、4ビット構成のメモリ用ベ
アチップを用いる例を説明したが、使用するメモリ用ベ
アチップのビット構成は4ビットに限定されず、1ビッ
トでも8ビットでもよい。また、メモリシステムのビッ
ト構成も32ビット構成には限定されず、例えば8ビッ
ト構成や16ビット構成にしてもよい。
In FIGS. 1 to 5, an example in which a 4-bit memory bare chip is used has been described. However, the bit configuration of the memory bare chip used is not limited to 4 bits and may be 1 bit or 8 bits. Further, the bit configuration of the memory system is not limited to the 32-bit configuration, but may be, for example, an 8-bit configuration or a 16-bit configuration.

【0022】図1では、9個が組になったメモリ用ベア
チップを1組だけプリント配線板2上に実装する例を説
明したが、プリント配線板2上に複数組のメモリ用ベア
チップ1を実装してもよい。例えば、図7は5個を組
(5個のうち1個は予備)とするメモリ用ベアチップ1
を2組プリント配線板2上にCOB実装した例を示して
おり、この場合も、図1と同様に32ビット構成で4M
バイトのメモリ容量を持ったメモリシステムが得られ
る。
FIG. 1 shows an example in which only one set of nine memory bare chips is mounted on the printed wiring board 2, but a plurality of sets of memory bare chips 1 are mounted on the printed wiring board 2. May be. For example, FIG. 7 shows a memory bare chip 1 having five chips (one of the five chips is a spare).
Is shown on the printed wiring board 2 as a set, and also in this case, as in FIG.
A memory system having a memory capacity of bytes can be obtained.

【0023】また、半導体ウエハ7上から切り出した複
数のメモリ用ベアチップ1を密着させてプリント配線板
2に実装するのではなく、図8に示すように各メモリ用
ベアチップ1を個別に切り出して実装してもよい。この
ように、個別に切り出したメモリ用ベアチップ1をCO
B実装した場合であっても、パッケージングされたメモ
リチップを実装する場合に比べて、工程の簡略化と実装
面積の低減が可能となる。
Further, instead of mounting a plurality of memory bare chips 1 cut out from the semiconductor wafer 7 in close contact with each other and mounting them on the printed wiring board 2, each memory bare chip 1 is individually cut out and mounted as shown in FIG. May be. In this manner, the memory bare chips 1 individually cut out are
Even in the case of B mounting, the process can be simplified and the mounting area can be reduced as compared with the case where a packaged memory chip is mounted.

【0024】図1〜8では、半導体ウエハ7から切り出
したメモリ用ベアチップ1とプリント配線板2上のパッ
ド4とを、ボンディングワイヤ5によってCOB実装す
る例を示したが、メモリ用ベアチップ1の入出力パッド
6をプリント配線板2に直接取り付けるフリップチップ
実装を行ってもよい。フリップチップ実装を行えば、ボ
ンディングワイヤ5を用いたCOB実装よりもさらに高
密度実装が可能となる。
FIGS. 1 to 8 show an example in which the memory bare chip 1 cut out from the semiconductor wafer 7 and the pads 4 on the printed wiring board 2 are COB-mounted by the bonding wires 5. Flip chip mounting for directly attaching the output pad 6 to the printed wiring board 2 may be performed. When flip-chip mounting is performed, higher-density mounting becomes possible than COB mounting using the bonding wires 5.

【0025】図1〜8では、SIMM構造のメモリシステム
の例を示しているが、パーソナルコンピュータ(以下、
パソコン)等の拡張スロットに取付可能な構造にしても
よい。例えば、図9はパソコンの拡張スロットに取付可
能なメモリボードと外形形状が等しいメモリシステムの
例を示す図である。同図に示すように、半導体ウエハ7
から切り出された複数のメモリ用ベアチップ1は、プリ
ント配線板2上にCOB実装あるいはフリップチップ実
装される。プリント配線板2上には、パソコンと信号の
やり取りをするためのコネクタ21が取り付けられてお
り、コネクタ21内の各端子はメモリ用ベアチップ1の
対応する入出力パッド6と導通している。
FIGS. 1 to 8 show an example of a memory system having a SIMM structure.
A structure that can be attached to an expansion slot such as a personal computer) may be used. For example, FIG. 9 is a diagram showing an example of a memory system having the same outer shape as a memory board that can be attached to an expansion slot of a personal computer. As shown in FIG.
Are mounted on the printed circuit board 2 by COB mounting or flip chip mounting. A connector 21 for exchanging signals with a personal computer is mounted on the printed wiring board 2, and each terminal in the connector 21 is electrically connected to the corresponding input / output pad 6 of the memory bare chip 1.

【0026】このように、メモリボード20上にメモリ
用ベアチップを実装すれば、従来のメモリボードよりも
メモリ容量を格段に増やすことができる。
As described above, when the memory bare chip is mounted on the memory board 20, the memory capacity can be remarkably increased as compared with the conventional memory board.

【0027】上述した実施形態では、組となる複数のメ
モリ用ベアチップ1の中に予備用のメモリ用ベアチップ
1を1個設ける例を説明したが、予備用のメモリ用ベア
チップ1は2個以上設けてもよい。また、予備用のメモ
リ用ベアチップ1を全く設けないようにしてもよい。ま
た、予備用のメモリ用ベアチップ1を全く設けないよう
にしてもよい。
In the above-described embodiment, an example has been described in which one spare memory bear chip 1 is provided in a plurality of memory bear chips 1 forming a set. However, two or more spare memory bear chips 1 are provided. You may. Further, the spare memory bare chip 1 may not be provided at all. Further, the spare memory bare chip 1 may not be provided at all.

【0028】また、上述した実施形態において、プリン
ト配線板2に複数のメモリ用ベアチップ1をCOB実装
あるいはフリップチップ実装した後に、エポキシ等の保
護部材によりメモリ用ベアチップ1を覆ってもよい。こ
れにより、ボンディングワイヤ5の断線や半田クラック
等の不良の発生を防止できる。
Further, in the above-described embodiment, after a plurality of memory bare chips 1 are mounted on the printed wiring board 2 by COB mounting or flip chip mounting, the memory bare chips 1 may be covered with a protective member such as epoxy. Thereby, the occurrence of defects such as disconnection of the bonding wire 5 and solder cracks can be prevented.

【0029】[0029]

【発明の効果】以上詳細に説明したように、本発明によ
れば、半導体ウエハ7上に形成されたメモリチップを複
数個組にして切り出して、パッケージングすることなく
密着させた状態でプリント配線板に実装するため、従来
のようにパッケージングされたメモリを実装する場合に
比べて高密度実装が可能となる。
As described in detail above, according to the present invention, a plurality of sets of memory chips formed on a semiconductor wafer 7 are cut out and printed in a state of being closely attached without packaging. Since it is mounted on a board, high-density mounting is possible as compared with a conventional case of mounting a packaged memory.

【図面の簡単な説明】[Brief description of the drawings]

【図1】メモリシステムの概略を示す平面図である。FIG. 1 is a plan view schematically showing a memory system.

【図2】メモリシステムの一部を拡大して示した図であ
る。
FIG. 2 is an enlarged view of a part of the memory system.

【図3】半導体ウエハ上に形成されたメモリ用ベアチッ
プの概略を示す図である。
FIG. 3 is a view schematically showing a memory bare chip formed on a semiconductor wafer.

【図4】メモリ用ベアチップの入出力パッドの信号内容
を説明する図である。
FIG. 4 is a diagram illustrating signal contents of input / output pads of a memory bare chip.

【図5】メモリ用ベアチップ内部のブロック構成を示す
図である。
FIG. 5 is a diagram showing a block configuration inside a memory bare chip.

【図6】半導体ウエハ上に形成されたメモリ用ベアチッ
プの概略を示す図である。
FIG. 6 is a view schematically showing a memory bare chip formed on a semiconductor wafer.

【図7】5個を組とするメモリ用ベアチップを2組プリ
ント配線板上にCOB実装した例を示す図である。
FIG. 7 is a diagram showing an example in which five sets of memory bare chips are mounted on a printed wiring board by COB.

【図8】各メモリ用ベアチップを個別に切り出して実装
した例を示す図である。
FIG. 8 is a diagram showing an example in which each bare chip for memory is individually cut out and mounted.

【図9】パソコンの拡張スロットに取付可能なメモリボ
ードに適用したメモリシステムを示す図である。
FIG. 9 is a diagram showing a memory system applied to a memory board that can be attached to an expansion slot of a personal computer.

【符号の説明】[Explanation of symbols]

1 メモリ用ベアチップ 2 プリント配線板 3 パターン 4 パッド 5 ボンディングワイヤ 6 入出力パッド 7 半導体ウエハ Reference Signs List 1 bare chip for memory 2 printed wiring board 3 pattern 4 pad 5 bonding wire 6 input / output pad 7 semiconductor wafer

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 半導体ウエハ上の連続した領域に形成さ
れた複数のメモリチップのそれぞれをプリント配線板上
に密着させて実装したことを特徴とするメモリシステ
ム。
1. A memory system wherein a plurality of memory chips formed in a continuous area on a semiconductor wafer are mounted on a printed wiring board in close contact with each other.
【請求項2】 請求項1において、 前記メモリチップのそれぞれは、複数の入出力パッドを
備え、 前記プリント配線板には、複数のパッドが形成され、こ
れらパッドと前記メモリチップの対応する前記入出力パ
ッドとをボンディングワイヤで接続したことを特徴とす
るメモリシステム。
2. The memory chip according to claim 1, wherein each of the memory chips includes a plurality of input / output pads, and a plurality of pads is formed on the printed wiring board, and the pads correspond to the input / output pads corresponding to the memory chips. A memory system, wherein an output pad is connected with a bonding wire.
【請求項3】 請求項1または2において、 前記メモリチップは前記半導体ウエハ上に矩形状に形成
され、かつ前記入出力パッドは矩形を構成する4辺のう
ち2辺に沿って形成されることを特徴とするメモリシス
テム。
3. The memory chip according to claim 1, wherein the memory chip is formed in a rectangular shape on the semiconductor wafer, and the input / output pad is formed along two of four sides constituting the rectangle. A memory system characterized by the above-mentioned.
【請求項4】 請求項1〜3のいずれかにおいて、 前記プリント配線板に実装される前記複数のメモリチッ
プのうち一部のメモリチップは他のメモリチップが不良
のときのみ使用可能とされることを特徴とするメモリシ
ステム。
4. The memory chip according to claim 1, wherein a part of the plurality of memory chips mounted on the printed wiring board is usable only when another memory chip is defective. A memory system, characterized in that:
JP28770696A 1996-10-09 1996-10-09 Memory system Pending JPH10116958A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28770696A JPH10116958A (en) 1996-10-09 1996-10-09 Memory system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28770696A JPH10116958A (en) 1996-10-09 1996-10-09 Memory system

Publications (1)

Publication Number Publication Date
JPH10116958A true JPH10116958A (en) 1998-05-06

Family

ID=17720693

Family Applications (1)

Application Number Title Priority Date Filing Date
JP28770696A Pending JPH10116958A (en) 1996-10-09 1996-10-09 Memory system

Country Status (1)

Country Link
JP (1) JPH10116958A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100326392B1 (en) * 1999-03-23 2002-03-12 최완균 Base substrate for chip card and chip card using the same
JP2006295059A (en) * 2005-04-14 2006-10-26 Denso Corp Semiconductor device and its manufacturing method
JP2006332360A (en) * 2005-05-26 2006-12-07 Mitsubishi Electric Corp Semiconductor device and its manufacturing method
US9424954B2 (en) 2013-05-23 2016-08-23 Samsung Electronics Co., Ltd. Semiconductor package including stacked chips and method of fabricating the same

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100326392B1 (en) * 1999-03-23 2002-03-12 최완균 Base substrate for chip card and chip card using the same
JP2006295059A (en) * 2005-04-14 2006-10-26 Denso Corp Semiconductor device and its manufacturing method
JP4600130B2 (en) * 2005-04-14 2010-12-15 株式会社デンソー Semiconductor device and manufacturing method thereof
JP2006332360A (en) * 2005-05-26 2006-12-07 Mitsubishi Electric Corp Semiconductor device and its manufacturing method
JP4597771B2 (en) * 2005-05-26 2010-12-15 三菱電機株式会社 Semiconductor device and manufacturing method thereof
US9424954B2 (en) 2013-05-23 2016-08-23 Samsung Electronics Co., Ltd. Semiconductor package including stacked chips and method of fabricating the same

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