JPH10116550A - Protective element and its application method - Google Patents

Protective element and its application method

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Publication number
JPH10116550A
JPH10116550A JP28913996A JP28913996A JPH10116550A JP H10116550 A JPH10116550 A JP H10116550A JP 28913996 A JP28913996 A JP 28913996A JP 28913996 A JP28913996 A JP 28913996A JP H10116550 A JPH10116550 A JP H10116550A
Authority
JP
Japan
Prior art keywords
electrode
melting point
fusible alloy
point fusible
low melting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP28913996A
Other languages
Japanese (ja)
Other versions
JP3768621B2 (en
Inventor
Mitsuaki Uemura
充明 植村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Uchihashi Estec Co Ltd
Original Assignee
Uchihashi Estec Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Uchihashi Estec Co Ltd filed Critical Uchihashi Estec Co Ltd
Priority to JP28913996A priority Critical patent/JP3768621B2/en
Publication of JPH10116550A publication Critical patent/JPH10116550A/en
Application granted granted Critical
Publication of JP3768621B2 publication Critical patent/JP3768621B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide a highly functional protective element having a simple structure as well as allowing easy manufacture, and a method for using the element, regarding a protective element for fusing a low-fusion point fusible alloy piece via the detection of the overvoltage of equipment, and the subsequent feed of power to a film resistor for heat generation as well as the isolation of the equipment and the film resistor from a power supply. SOLUTION: The first electrode 21, the second electrode 22, the third electrode 23 and the fourth electrode 24 are arranged on one side of an insulating board 1. In addition, a resistor R is provided across the second electrode 22 and the fourth electrode 24. Also, low-fusion point fusible alloy pieces A and B are respectively laid between the first electrode 21 and the second electrode 22, and between the second electrode 22 and the third electrode 23. Furthermore, flux 4 is applied to the low-fusion point fusible alloy pieces A and B, and one side of the insulating board 1 is covered with an insulation layer 5.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は過電圧から電気機器
を保護するために用いる保護素子及びその使用方法に関
するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a protection element used for protecting electric equipment from overvoltage and a method of using the same.

【0002】[0002]

【従来の技術】機器に過電圧が作用したときに機器を電
源から遮断する場合、膜抵抗と低融点可溶合金片とを絶
縁基板の片面上に並設し、絶縁基板の片面を絶縁層で被
覆して成る保護素子を使用し、図4に示すように、この
保護素子E’及び過電圧検知通電回路F’、例えば、ト
ランジスタTr’のベ−ス側にツエナダイオ−ドD’を
接続して成る回路F’を電源S’と被保護機器Z’との
間に挿入し、機器Z’にツエナダイオ−ドD’の降伏電
圧以上の逆電圧が作用すると、ベ−ス電流が流れ、この
ベ−ス電流に応じコレクタ電流が流れて膜抵抗R’が発
熱し、低融点可溶合金片A’が溶断されることで機器
Z’を電源S’から遮断することが公知である。
2. Description of the Related Art When an equipment is cut off from a power supply when an overvoltage is applied to the equipment, a film resistor and a low melting point fusible alloy piece are arranged in parallel on one surface of an insulating substrate, and one surface of the insulating substrate is provided with an insulating layer. As shown in FIG. 4, the protective element E 'and the overvoltage detection energizing circuit F', for example, a Zener diode D 'is connected to the base side of the transistor Tr' as shown in FIG. Circuit F 'is inserted between the power supply S' and the protected device Z ', and when a reverse voltage equal to or higher than the breakdown voltage of the Zener diode D' acts on the device Z ', a base current flows. It is known that the device Z 'is cut off from the power supply S' by causing a collector current to flow in accordance with the source current to generate a film resistance R 'and blow the low melting point fusible alloy piece A'.

【0003】しかしながら、上記の保護素子では、低融
点可溶合金片A’の溶断で機器Z’が電源から遮断され
ても、機器Z’がキャパシティブな負荷の場合、例えば
蓄電池の場合、残留電圧のためにベ−ス電流が流れ続け
て膜抵抗R’の通電発熱が継続されることがあり、危険
である。
However, in the above protection element, even if the equipment Z 'is cut off from the power supply due to the fusing of the low melting point fusible alloy piece A', when the equipment Z 'has a capacitive load, for example, in the case of a storage battery, the residual voltage is low. For this reason, the base current may continue to flow and the heat generation of the film resistor R 'may be continued, which is dangerous.

【0004】そこで、図5の(イ)に示すように、中央
ヒュ−ズ電極21’とヒ−タ−片側T字形電極22’と
を結合した複合電極20’、ヒ−タ−他側T字形電極2
3’及びヒ−ズ両側電極24’、25’とを基板1’に
印刷形成し、図5の(ロ)に示すように、ヒ−タ−片側
T字形電極22’とヒ−タ−他側T字形電極23’との
T字形両ア−ム間にわたってそれぞれ膜抵抗R’、R’
を設け、各膜抵抗上に絶縁層i’、i’を設け、複合電
極20’の中央ヒュ−ズ電極21’とヒュ−ズ両側電極
24’ね25’との間にそれぞれ低融点可溶合金片
A’、A’を接続し、更に図5の(ハ)に示すように、
フラックス層4’及び外部絶縁層5’を被覆して成る保
護素子を用いることが提案されている(特開平7−15
3367号)。この保護素子を組み込んだ保護回路で
は、図6に示す通り膜抵抗R’−低融点可溶合金片A’
の対を2組備え、各対の膜抵抗R’の通電発熱でその対
の低融点可溶合金片A’を溶断している。而して、機器
Z’側にツエナダイオ−ドD’の降伏電圧以上の逆電圧
が作用すると、トランジスタTr’にベ−ス電流が流
れ、コレクタ電流が流れて両膜抵抗R’、R’が通電発
熱され、各膜抵抗R’、R’の通電発熱で各低融点可溶
合金片A’、A’が溶断されて機器Z’が電源S’から
遮断されると共に膜抵抗R’、R’が電源S’から遮断
される。
Therefore, as shown in FIG. 5A, a composite electrode 20 'in which a central fuse electrode 21' and a heater one-sided T-shaped electrode 22 'are combined, and a heater-other side T-shaped electrode 22'. L-shaped electrode 2
3 'and both side electrodes 24' and 25 'are printed on the substrate 1', and as shown in FIG. 5 (b), a heater one-sided T-shaped electrode 22 'and a heater and others are formed. The film resistances R 'and R' extend between the two arms of the T-shape with the side T-shaped electrode 23 '.
And an insulating layer i ', i' is provided on each film resistor, and a low melting point is provided between the central fuse electrode 21 'of the composite electrode 20' and the fuse side electrodes 24 'and 25', respectively. The alloy pieces A ′ and A ′ were connected, and as shown in FIG.
It has been proposed to use a protection element comprising a flux layer 4 'and an external insulating layer 5' (Japanese Patent Laid-Open No. 7-15 / 1995).
No. 3367). In the protection circuit incorporating this protection element, as shown in FIG. 6, the film resistance R'-low melting point fusible alloy piece A '
Are provided, and the low melting point fusible alloy pieces A ′ of each pair are blown off by the heat generated by the current flowing through the film resistors R ′ of each pair. When a reverse voltage equal to or higher than the breakdown voltage of the Zener diode D 'acts on the device Z', a base current flows through the transistor Tr ', a collector current flows, and both film resistances R' and R 'are increased. Electric current is generated and the low melting point fusible alloy pieces A 'and A' are melted and cut off from the power supply S 'by the electric current generated by the film resistors R' and R ', and the film resistors R' and R 'are cut off. Is disconnected from the power supply S '.

【0005】[0005]

【発明が解決しようとする課題】しかしながら、上記の
保護素子では膜抵抗−低融点可溶合金片の対が二組であ
るために2個の膜抵抗についての抵抗値調整が必要であ
って製造がやっかいであり、また、膜抵抗−低融点可溶
合金片を平面的に2組設ける必要があるため保護素子の
小サイズ化にも不利である。更に、膜抵抗上の絶縁層、
例えばガラス膜はスクリ−ン印刷により形成され、スク
リ−ンのメッシユに起因しての凹凸化か避け難く、かか
るもとでは、その上での低融点可溶合金片の円滑な球状
化分断を保証し難い。
However, in the above-described protective element, since there are two pairs of the film resistance and the low melting point fusible alloy piece, it is necessary to adjust the resistance values of the two film resistances, and therefore, the production is difficult. Also, it is disadvantageous to reduce the size of the protection element because it is necessary to provide two sets of the film resistance and the low melting point fusible alloy piece in a plane. Furthermore, an insulating layer on the film resistance,
For example, a glass film is formed by screen printing, and it is difficult to avoid unevenness due to the mesh of the screen. Under such circumstances, the smooth spheroidization of the low-melting-point fusible alloy piece on the glass film is required. Difficult to guarantee.

【0006】本発明の目的は、機器の過電圧を検知し膜
抵抗を通電発熱させて低融点可溶合金片を溶断させ、機
器及び膜抵抗を電源より遮断する保護素子を対象とし、
構造が簡単で製造が容易な作動性に優れた保護素子及び
その保護素子の使用方法を提供することにある。
An object of the present invention is to provide a protection element for detecting overvoltage of a device, energizing and generating heat in a film resistor to blow a low melting point fusible alloy piece, and cutting off the device and the film resistor from a power supply.
An object of the present invention is to provide a protective element having a simple structure, easy to manufacture, and excellent in operability, and a method for using the protective element.

【0007】[0007]

【課題を解決しようとする手段】本発明に係る保護素子
は、絶縁基板の片面上に第1電極、第2電極、第3電極
及び第4電極を設け、第2電極と第4電極とにわたって
抵抗を設け、第1電極と第2電極との間及び第2電極と
第3電極との間に低融点可溶合金片A及びBをそれぞれ
接続し、低融点可溶合金片にフラックスを塗布し、上記
絶縁基板の片面を覆って絶縁層を被覆して成る構成であ
る。本発明に係る保護素子は、第1電極を電源側に、第
3電極を被保護機器側にそれぞれ接続し、第1電極また
は第3電極と第4電極との間に被保護機器の過電圧を検
知し、上記抵抗を通電発熱させる過電圧検知通電回路を
接続して使用できる。
A protective element according to the present invention comprises a first electrode, a second electrode, a third electrode, and a fourth electrode provided on one surface of an insulating substrate, and extends over the second electrode and the fourth electrode. A resistor is provided, low melting point fusible alloy pieces A and B are connected between the first electrode and the second electrode and between the second electrode and the third electrode, respectively, and flux is applied to the low melting point fusible alloy piece. The insulating substrate is covered with an insulating layer so as to cover one surface of the insulating substrate. The protection element according to the present invention has the first electrode connected to the power supply side and the third electrode connected to the protected device side, and prevents the overvoltage of the protected device between the first electrode or the third electrode and the fourth electrode. An overvoltage detection energizing circuit for detecting and energizing the resistor to generate heat can be connected and used.

【0008】また、本発明に係る保護素子は、低融点可
溶合金片Aの融点と低融点可溶合金片Bの融点とを異に
し、各低融点可溶合金片を異なる回路部分に対するヒュ
−ズとして用い、異なる過電圧を検出して保護素子の抵
抗を異なる温度で通電発熱させる過電圧検知通電回路を
接続し、小なる過電圧で抵抗を通電発熱させて一方の低
融点可溶合金片の溶断で一方の回路部分を電源から遮断
し、その後の大なる過電圧で抵抗を通電発熱させて他方
の低融点可溶合金片の溶断で他方の回路部分を電源から
遮断することによっても使用できる。
Further, in the protection element according to the present invention, the melting point of the low-melting-point fusible alloy piece A and the melting point of the low-melting-point fusible alloy piece B are different from each other, and each low-melting-point fusible alloy piece is used for a different circuit portion. Connect an overvoltage detection energizing circuit that detects different overvoltages and energizes and heats the resistance of the protection element at different temperatures, and heats up the resistor with a small overvoltage to melt one of the low melting point fusible alloy pieces. Then, one circuit portion can be cut off from the power supply, and then the resistor is heated and heated by a large overvoltage, and the other circuit portion is cut off from the power supply by fusing the other low melting point fusible alloy piece.

【0009】[0009]

【発明の実施の形態】以下、図面を参照しつつ本発明の
実施の形態について説明する。図1は本発明に係る保護
素子の一例を示している。図1において、1は耐熱性の
絶縁基板、例えばセラミックス板である。21〜24は
絶縁基板の片面上に印刷形成した膜状の第1電極〜第4
電極であり、第1電極21の先端部と第3電極23の先
端部との間に第2電極22を設け、更に第4電極24を
第2電極22と所定の間隔を隔てて設けてある。31、
33及び34は第1電極、第3電極及び第4電極のそれ
ぞれに接続したリ−ド線(絶縁被覆線)である。Rは第
2電極22と第4電極24とにわたって印刷により設け
た膜抵抗である。Aは第1電極21の先端部と第2電極
22との間に接続した低融点可溶合金片、Bは第2電極
22と第3電極23の先端部との間に接続した低融点可
溶合金片であり、低融点可溶合金片A、Bが同一材質、
同一形状の場合、図のように連続線にしてもよい。4は
低融点可溶合金片A及びB上に塗布したフラックスであ
る。5は絶縁基板1の片面を覆うようにして設けた絶縁
層であり、上記低融点可溶合金片やフラックスを溶融流
動させることのないように、常温で被覆できる絶縁材、
例えば常温硬化エポキシ樹脂を使用してある。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 shows an example of a protection element according to the present invention. In FIG. 1, reference numeral 1 denotes a heat-resistant insulating substrate, for example, a ceramic plate. Reference numerals 21 to 24 denote first to fourth film-shaped electrodes formed on one surface of the insulating substrate by printing.
The second electrode 22 is provided between the tip of the first electrode 21 and the tip of the third electrode 23, and the fourth electrode 24 is further provided at a predetermined interval from the second electrode 22. . 31,
33 and 34 are lead wires (insulated wires) connected to the first, third and fourth electrodes, respectively. R is a film resistance provided by printing over the second electrode 22 and the fourth electrode 24. A is a low melting point fusible alloy piece connected between the tip of the first electrode 21 and the second electrode 22, and B is a low melting point fusible alloy connected between the second electrode 22 and the tip of the third electrode 23. It is a molten alloy piece, and the low melting point fusible alloy pieces A and B are the same material,
In the case of the same shape, a continuous line may be used as shown in the figure. 4 is a flux applied on the low melting point fusible alloy pieces A and B. Reference numeral 5 denotes an insulating layer provided so as to cover one surface of the insulating substrate 1, and an insulating material which can be coated at room temperature so as not to melt and flow the low melting point fusible alloy piece or flux.
For example, a cold-setting epoxy resin is used.

【0010】本発明に係る保護素子は、被保護機器に過
電圧が作用すると、その機器を電源から遮断するために
使用され、図2はその使用状態を説明するための回路図
であり、Eは本発明に係る保護素子を、Fは過電圧検知
通電回路をそれぞれ示している。図2において、被保護
機器Zと電源Sとの間に本発明に係る保護素子Eと過電
圧検知通電回路Fとを組み込み、トランジスタTrのコ
レクタを保護素子Eの第4電極24に接続し、ツエナダ
イオ−ドDの高電圧側電極及び保護素子Eの第3電極2
3を被保護機器Zの高電圧側端子に接続し、保護素子E
の第1電極21を電源Sの高電圧側端子に接続し、トラ
ンジスタTrのエミッタを接地してある。図2に示す回
路において、機器Zにツエナダイオ−ドDの降伏電圧以
上の過電圧が作用すると、トランジスタTrにベ−ス電
流が流れ、これに伴い大なるコレクタ電流が流れて膜抵
抗Rが発熱され、この発生熱が第2電極22を介し低融
点可溶合金片A及びBに伝達されて両低融点可溶合金片
A及びBが既溶融フラックスの活性作用を受けつつ溶断
され、被保護機器Zが電源Sから遮断されると共に膜抵
抗Rが電源Sから遮断される。従って、低融点可溶合金
片Bが溶断されたのち、機器Zの過電圧状態が残留電荷
のために維持されてトランジスタTrが導通状態にあっ
ても、低融点可溶合金片Aの溶断による膜抵抗Rの電源
Sからの遮断のために、膜抵抗Rの発熱続行を排除でき
る。上記において、ツエナダイオ−ドDの高電圧側電極
を第1電極21側に接続してもよい。
The protection element according to the present invention is used to shut off a device to be protected from an electric power supply when an overvoltage acts on the device. FIG. 2 is a circuit diagram for explaining the state of use of the device. F indicates a protection element according to the present invention, and F indicates an overvoltage detection energizing circuit. In FIG. 2, the protection element E and the overvoltage detection energizing circuit F according to the present invention are incorporated between the protected device Z and the power supply S, and the collector of the transistor Tr is connected to the fourth electrode 24 of the protection element E. The high-voltage side electrode of the gate D and the third electrode 2 of the protection element E
3 to the high voltage side terminal of the protected device Z, and
Is connected to the high voltage side terminal of the power supply S, and the emitter of the transistor Tr is grounded. In the circuit shown in FIG. 2, when an overvoltage equal to or higher than the breakdown voltage of the Zener diode D acts on the device Z, a base current flows through the transistor Tr, causing a large collector current to flow, causing the film resistor R to generate heat. The generated heat is transmitted to the low melting point fusible alloy pieces A and B via the second electrode 22 so that the low melting point fusible alloy pieces A and B are blown off while receiving the activation action of the already melted flux. Z is cut off from the power supply S, and the film resistor R is cut off from the power supply S. Therefore, after the low melting point fusible alloy piece B is blown, even if the overvoltage state of the device Z is maintained due to the residual charge and the transistor Tr is in the conductive state, the film due to the low melting point fusible alloy piece A being blown out. Since the resistance R is cut off from the power supply S, the continuation of heat generation of the film resistance R can be eliminated. In the above, the high voltage side electrode of the Zener diode D may be connected to the first electrode 21 side.

【0011】上記において、溶融低融点金属の溶断に
は、絶縁基板が溶融金属をはじくことと、電極が溶融金
属によく濡れることが有効に寄与し、絶縁基板の表面平
滑性も重要な条件である(溶融金属を流れ易くする要
素)。而るに、セラミックス板は、ガラスのスクリ−ン
印刷膜に較べ表面平滑性に優れており有利である。本発
明に係る保護素子においては、図3に示すように、低融
点可溶合金片Bを回路部分Zbに対するヒュ−ズとして
用い、低融点可溶合金片Aを回路部分Zaに対するヒュ
−ズとして用い、図3において、ツエナダイオ−ドDb
の降伏電圧Vbをツエナダイオ−ドDaの降伏電圧Va
よりも低くし、低融点可溶合金片Bの融点を低融点可溶
合金片Aの融点よりも低くし、Vb〜Vaの過電圧でツ
エナダイオ−ドDbを導通させてベ−ス電流を流し、こ
のべ−ス電流に対応するコレクタ電流で保護素子Eの抵
抗Rを通電発熱させ低融点可溶合金片Bを溶断させて回
路部分Zbを電源(s−s’は電源端子)から遮断し、
その後、Va以上の過電圧が作用すると、ナダイオ−ド
Daを導通させてベ−ス電流を流し、このべ−ス電流に
対応するコレクタ電流で保護素子Eの抵抗Rを通電発熱
させ低融点可溶合金片Aを溶断させて回路部分Zaを電
源(s−s’は電源端子)から遮断させることもでき
る。
In the above, the fusing of the molten low-melting-point metal effectively contributes to the fact that the insulating substrate repels the molten metal and the electrodes are well wetted by the molten metal, and the surface smoothness of the insulating substrate is also an important condition. Yes (elements that make molten metal easier to flow). Thus, the ceramic plate is superior in surface smoothness as compared with a glass screen printing film and is advantageous. In the protection element according to the present invention, as shown in FIG. 3, the low melting point fusible alloy piece B is used as a fuse for the circuit portion Zb, and the low melting point fusible alloy piece A is used as a fuse for the circuit portion Za. In FIG. 3, the Zena diode Db is used.
Of the breakdown voltage Vb of the Zener diode Da
The melting point of the low melting point fusible alloy piece B is lower than the melting point of the low melting point fusible alloy piece A, the Zener diode Db is turned on by an overvoltage of Vb to Va, and a base current is passed. With the collector current corresponding to this base current, the resistor R of the protection element E is energized and heated to melt the low melting point fusible alloy piece B to cut off the circuit portion Zb from the power supply (ss' is a power supply terminal).
Thereafter, when an overvoltage of Va or more acts, the diode Da is made conductive and a base current flows, and the resistance R of the protection element E is heated by a collector current corresponding to this base current to generate a low melting point. The circuit portion Za can be cut off from the power supply (ss' is a power supply terminal) by fusing the alloy piece A.

【0012】本発明に係る保護素子において、絶縁基板
には厚み100〜1200μmのセラミックス板、例え
ば、96%アルミナセラミックス板を使用できる。その
他、金属を母体とし、絶縁処理したものの使用も可能で
ある。絶縁基板の平面寸法は、通常(3mm〜20m
m)×(3mm〜20mm)の正方形乃至は長方形とさ
れる。本発明に係る保護素子おいて、低融点可溶合金片
には液相線温度が75℃〜300℃直径100μm〜1
200μmの低融点合金丸線、これと同一断面積の低融
点合金角線または低融点合金箔を使用できる。本発明に
係る保護素子おいて、電極は導体ペ−スト(導体粉末と
釉薬との混合物であり、導体粉末には銀−白金系、銀−
パラジウム系、銅系)をスクリ−ン印刷し、これを焼き
付けることにより形成できる。また、銅箔積層基板の銅
箔のエッチングにより電極付き絶縁基板を得ることもで
きる。本発明に係る保護素子おいて、膜抵抗は抵抗ペ−
スト、例えば、酸化ルテニウム粉末または炭素粉末と釉
薬との混合物を絶縁基板上にスクリ−ン印刷し、これを
焼き付けることにより形成でき、膜厚は通常1〜30μ
mとされる。膜抵抗にはTi−Si系の膜抵抗を使用す
ることもできる。膜抵抗の抵抗値調整を必要とする場
合、トリミングにより行うが、この際膜抵抗に亀裂が発
生することのないように、膜抵抗上にガラス保護膜を形
成したうえで、トリミングを行うこともできる。更に、
長期安定性等のために保護が必要な場合は、膜抵抗上に
保護膜、例えば、ガラス膜を形成する。膜抵抗端部と電
極端部との重なり状態は、何れを下側としてもよい。こ
れらの膜抵抗に代え、チップ抵抗の使用も可能である。
In the protection element according to the present invention, a ceramic plate having a thickness of 100 to 1200 μm, for example, a 96% alumina ceramic plate can be used as the insulating substrate. In addition, it is also possible to use an insulated metal-based material. The plane dimensions of the insulating substrate are usually (3 mm to 20 m
m) × (3 mm to 20 mm) square or rectangular. In the protection element according to the present invention, the low melting point fusible alloy piece has a liquidus temperature of 75 ° C to 300 ° C and a diameter of 100 µm to 1 ° C.
A low-melting alloy round wire of 200 μm, a low-melting alloy square wire or a low-melting alloy foil having the same cross-sectional area as this can be used. In the protective element according to the present invention, the electrode is a conductor paste (a mixture of a conductor powder and a glaze, and the conductor powder includes a silver-platinum-based silver
(Palladium-based, copper-based) by screen printing and baking. Also, an insulating substrate with electrodes can be obtained by etching the copper foil of the copper foil laminated substrate. In the protection device according to the present invention, the film resistance is a resistance value.
For example, a mixture of ruthenium oxide powder or carbon powder and glaze is screen-printed on an insulating substrate and baked, and the film thickness is usually 1 to 30 μm.
m. As the film resistance, a Ti-Si based film resistance can be used. When the resistance value of the film resistor needs to be adjusted, the trimming is performed. it can. Furthermore,
When protection is required for long-term stability or the like, a protective film, for example, a glass film is formed on the film resistor. Either of the overlapping states of the film resistance end and the electrode end may be on the lower side. Instead of these film resistors, it is also possible to use chip resistors.

【0013】本発明に係る保護素子において、フラック
スは低融点可溶合金片の酸化を防止し、かつ低融点可溶
合金片の多少の酸化膜を溶解して溶融合金の分断を容易
にするために用いられ、通常ロジンを主成分とし、必要
に応じて活性剤(例えば、ジエチルアミンの塩酸塩)を
添加したものを使用できる。
In the protective element according to the present invention, the flux prevents oxidation of the low melting point fusible alloy piece and dissolves some oxide film of the low melting point fusible alloy piece to facilitate cutting of the molten alloy. In general, rosin can be used as a main component, and if necessary, an activator (for example, hydrochloride of diethylamine) is added.

【0014】本発明に係る保護素子を製造するには、絶
縁基板の片面に第1電極〜第4電極を形成し、膜抵抗を
印刷し、膜抵抗上にガラス保護膜を形成し、必要に応じ
トリミングにより抵抗値を調整し、抵抗保護が必要な場
合は、膜抵抗上にガラス膜を形成し、低融点可溶合金片
A及びBを接続し、電極にリ−ド線を接続し、低融点可
溶合金片にフラックスを塗布し、次いで基板を常温のエ
ポキシ樹脂液に浸漬し、その浸漬被覆層を乾燥硬化させ
る方法を使用できる。
To manufacture the protection element according to the present invention, first to fourth electrodes are formed on one surface of an insulating substrate, a film resistor is printed, and a glass protective film is formed on the film resistor. The resistance value is adjusted by trimming, and if resistance protection is necessary, a glass film is formed on the film resistance, low melting point fusible alloy pieces A and B are connected, and a lead wire is connected to the electrode, A method can be used in which a flux is applied to a low melting point fusible alloy piece, then the substrate is immersed in an epoxy resin solution at room temperature, and the immersion coating layer is dried and cured.

【0015】[0015]

【発明の効果】本発明に係る保護素子においては、一個
の抵抗体と二個の低融点可溶合金片を有し、被保護機器
に過電圧が作用したときに抵抗体の通電発熱により両方
の低融点可溶合金片を溶断させて被保護機器を電源から
遮断すると共に抵抗体を電源から遮断することができ、
従来例、すなわち、両低融点可溶合金片のそれぞれに対
し抵抗体を設け、一方の抵抗体の通電発熱で一方の低融
点可溶合金片を溶断し、他方の抵抗体の通電発熱で他方
の低融点可溶合金片を溶断する構成に較べ、構造的に簡
易である。
The protection element according to the present invention has one resistor and two low-melting-point fusible alloy pieces. When an overvoltage acts on the device to be protected, both resistors are energized and heated by the resistor. The low-melting-point fusible alloy piece can be blown to cut off the equipment to be protected from the power supply and to cut off the resistor from the power supply,
Conventional example, that is, a resistor is provided for each of both low-melting-point fusible alloy pieces, one low-melting-point fusible alloy piece is blown by the heat generation of one resistor, and the other is melted by the heat generation of the other resistor. It is structurally simpler than the configuration in which the low melting point fusible alloy piece is blown.

【0016】また、膜抵抗上に絶縁ガラス膜を設け、こ
の絶縁ガラス膜上に低融点可溶合金片を重ねて配してい
る従来例とは異なり、膜抵抗と低融点可溶合金片とを重
ねずに配し、上記絶縁ガラス膜の表面(スクリ−ン印刷
上、スクリ−ンメッシュに起因する凹凸が避けられな
い)よりも平滑表面のセラミックス絶縁基板上に低融点
可溶合金片を配しているから、溶融合金をスム−ズに流
動させて迅速に分断させ得、優れた作動性を保証でき
る。更に、抵抗値調整を必要とする場合、トリミングに
よる抵抗値調整を一個の膜抵抗について行えばよいか
ら、製造工数を低減でき、製造上有利である。更にま
た、異なる回路部分を異なる過電圧に対し電源から遮断
することもできる。
Further, unlike the conventional example in which an insulating glass film is provided on a film resistor and a low melting point fusible alloy piece is disposed on the insulating glass film, the film resistance and the low melting point fusible alloy piece are different from each other. And disposing the low melting point fusible alloy piece on a ceramic insulating substrate having a smoother surface than the surface of the insulating glass film (unevenness due to the screen mesh is inevitable on the screen printing). Because of the arrangement, the molten alloy can be smoothly flowed to be quickly divided, and excellent operability can be guaranteed. Further, when the resistance value adjustment is required, the resistance value adjustment by trimming may be performed for one film resistor, so that the number of manufacturing steps can be reduced, which is advantageous in manufacturing. Furthermore, different circuit parts can be disconnected from the power supply for different overvoltages.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係る保護素子の一例を示す説明図であ
る。
FIG. 1 is an explanatory view showing an example of a protection element according to the present invention.

【図2】本発明に係る保護素子を用いた回路の一例を示
す説明図である。
FIG. 2 is an explanatory diagram showing an example of a circuit using a protection element according to the present invention.

【図3】本発明に係る保護素子を用いた回路の一例を示
す説明図である。
FIG. 3 is an explanatory diagram showing an example of a circuit using the protection element according to the present invention.

【図4】従来の保護回路を示す説明図である。FIG. 4 is an explanatory diagram showing a conventional protection circuit.

【図5】従来の保護素子を示す説明図である。FIG. 5 is an explanatory view showing a conventional protection element.

【図6】図5の保護素子を用いた保護回路を示す説明図
である。
6 is an explanatory diagram showing a protection circuit using the protection element of FIG.

【符号の説明】[Explanation of symbols]

1 絶縁基板 21 第1電極 22 第2電極 23 第3電極 24 第4電極 A 低融点可溶合金片 B 低融点可溶合金片 R 抵抗 4 フラックス 5 絶縁層 E 保護素子 F 過電圧検知通電回路 Z 被保護機器 S 電源 DESCRIPTION OF SYMBOLS 1 Insulating substrate 21 1st electrode 22 2nd electrode 23 3rd electrode 24 4th electrode A Low melting point fusible alloy piece B Low melting point fusible alloy piece R Resistance 4 Flux 5 Insulating layer E Protection element F Overvoltage detection energizing circuit Z Protective equipment S Power supply

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】絶縁基板の片面上に第1電極、第2電極、
第3電極及び第4電極を設け、第2電極と第4電極とに
わたって抵抗を設け、第1電極と第2電極との間及び第
2電極と第3電極との間に低融点可溶合金片A及びBを
それぞれ接続し、低融点可溶合金片にフラックスを塗布
し、上記絶縁基板の片面を覆って絶縁層を被覆して成る
ことを特徴とする保護素子。
A first electrode, a second electrode, and a first electrode on one surface of the insulating substrate;
A third electrode and a fourth electrode are provided, a resistor is provided between the second electrode and the fourth electrode, and a low melting point fusible alloy is provided between the first electrode and the second electrode and between the second electrode and the third electrode. A protective element comprising connecting the pieces A and B to each other, applying a flux to the low melting point fusible alloy piece, and covering one surface of the insulating substrate with an insulating layer.
【請求項2】請求項1乃至3何れか記載の保護素子の第
1電極を電源側に、第3電極を被保護機器側にそれぞれ
接続し、第1電極または第3電極と第4電極との間に被
保護機器の過電圧を検知し、上記抵抗を通電発熱させる
過電圧検知通電回路を接続することを特徴とする保護素
子の使用方法。
2. The protection device according to claim 1, wherein the first electrode is connected to the power supply side, and the third electrode is connected to the device to be protected, and the first electrode or the third electrode and the fourth electrode are connected to each other. A method for using a protection element, comprising: connecting an overvoltage detection energizing circuit for detecting an overvoltage of a protected device and energizing and generating heat in the resistor.
【請求項3】請求項1記載の保護素子の低融点可溶合金
片Aの融点と低融点可溶合金片Bの融点とを異にし、各
低融点可溶合金片を異なる回路部分に対するヒュ−ズと
して用い、異なる過電圧を検出して保護素子の抵抗を異
なる温度で通電発熱させる過電圧検知通電回路を接続
し、小なる過電圧で抵抗を通電発熱させて一方の低融点
可溶合金片の溶断で一方の回路部分を電源から遮断し、
その後の大なる過電圧で抵抗を通電発熱させて他方の低
融点可溶合金片の溶断で他方の回路部分を電源から遮断
することを特徴とする保護素子の使用方法。
3. The melting point of the low melting point fusible alloy piece A and the melting point of the low melting point fusible alloy piece B of the protection element according to claim 1, and each low melting point fusible alloy piece is used for a different circuit portion. Connect an overvoltage detection energizing circuit that detects different overvoltages and energizes and heats the resistance of the protection element at different temperatures, and heats up the resistor with a small overvoltage to melt one of the low melting point fusible alloy pieces. To disconnect one circuit from the power supply,
A method of using a protection element, characterized in that a resistor is energized and heated by a large overvoltage thereafter to cut off the other circuit portion from a power supply by fusing the other low melting point fusible alloy piece.
JP28913996A 1996-10-12 1996-10-12 How to use the protective element Expired - Fee Related JP3768621B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP28913996A JP3768621B2 (en) 1996-10-12 1996-10-12 How to use the protective element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP28913996A JP3768621B2 (en) 1996-10-12 1996-10-12 How to use the protective element

Publications (2)

Publication Number Publication Date
JPH10116550A true JPH10116550A (en) 1998-05-06
JP3768621B2 JP3768621B2 (en) 2006-04-19

Family

ID=17739265

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
JP (1) JP3768621B2 (en)

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000011831A (en) * 1998-06-19 2000-01-14 Nec Kansai Ltd Thermal fuse with resistance
US6344633B1 (en) 1999-03-31 2002-02-05 Sony Chemicals Corp. Stacked protective device lacking an insulating layer between the heating element and the low-melting element
US6351361B1 (en) 1999-04-23 2002-02-26 Sony Chemicals Corporation Overcurrent protection device
US6452475B1 (en) 1999-04-16 2002-09-17 Sony Chemicals Corp. Protective device
US6462318B2 (en) 2000-05-17 2002-10-08 Sony Chemicals Corp. Protective element
US6566995B2 (en) 2000-05-17 2003-05-20 Sony Chemicals Corporation Protective element
US7088216B2 (en) 2003-02-05 2006-08-08 Sony Chemicals Corp. Protective device
US7286037B2 (en) 2002-12-27 2007-10-23 Sony Corporation Protective element
JP2009070805A (en) * 2007-08-20 2009-04-02 Uchihashi Estec Co Ltd Substrate type temperature fuse with resistor and secondary battery protection circuit
JP2016504718A (en) * 2012-11-26 2016-02-12 スマート エレクトロニクス インク Composite protective element that cuts off current and voltage in abnormal state
CN106653513A (en) * 2016-12-30 2017-05-10 上海长园维安电子线路保护有限公司 Automatic control protector conforming to high-voltage and low-voltage dual-function protection and fabrication method of automatic control protector
CN108449814A (en) * 2018-05-17 2018-08-24 佛山市海德精工电子科技有限公司 A kind of heater
KR20200030440A (en) 2018-09-12 2020-03-20 우치하시 에스테크 가부시키가이샤 Protective element

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000011831A (en) * 1998-06-19 2000-01-14 Nec Kansai Ltd Thermal fuse with resistance
US6344633B1 (en) 1999-03-31 2002-02-05 Sony Chemicals Corp. Stacked protective device lacking an insulating layer between the heating element and the low-melting element
US6452475B1 (en) 1999-04-16 2002-09-17 Sony Chemicals Corp. Protective device
US6351361B1 (en) 1999-04-23 2002-02-26 Sony Chemicals Corporation Overcurrent protection device
US6462318B2 (en) 2000-05-17 2002-10-08 Sony Chemicals Corp. Protective element
US6566995B2 (en) 2000-05-17 2003-05-20 Sony Chemicals Corporation Protective element
KR100478316B1 (en) * 2000-05-17 2005-03-23 소니 케미카루 가부시키가이샤 Protective element
US7286037B2 (en) 2002-12-27 2007-10-23 Sony Corporation Protective element
US7088216B2 (en) 2003-02-05 2006-08-08 Sony Chemicals Corp. Protective device
JP2009070805A (en) * 2007-08-20 2009-04-02 Uchihashi Estec Co Ltd Substrate type temperature fuse with resistor and secondary battery protection circuit
JP4663760B2 (en) * 2007-08-20 2011-04-06 内橋エステック株式会社 Secondary battery protection circuit
JP2016504718A (en) * 2012-11-26 2016-02-12 スマート エレクトロニクス インク Composite protective element that cuts off current and voltage in abnormal state
CN106653513A (en) * 2016-12-30 2017-05-10 上海长园维安电子线路保护有限公司 Automatic control protector conforming to high-voltage and low-voltage dual-function protection and fabrication method of automatic control protector
CN106653513B (en) * 2016-12-30 2023-08-25 上海维安电子股份有限公司 Self-control protector meeting high-voltage low-voltage dual-function protection and manufacturing method thereof
CN108449814A (en) * 2018-05-17 2018-08-24 佛山市海德精工电子科技有限公司 A kind of heater
KR20200030440A (en) 2018-09-12 2020-03-20 우치하시 에스테크 가부시키가이샤 Protective element

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