JPH10111195A - Vibrating transducer and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vibrating transducer and its manufacturing method wherein buckling is prevented with sure even when a compression is applied to a vibration beam by applying an initial tension to the vibration beam of polysilicon. SOLUTION: The transducer, by measuring a resonance frequency of a vibration beam 12 fixed to a substrate 11 by its both ends, measures a strain applied to the both ends of the vibration beam. In that case, the vibration beam 12 of polysilicon wherein a phosphorus glass is film-formed for obtaining a specified initial tension by high-concentration doping with phosphorus, and then is subjected to drive-in under heated nitrogen, and then the phosphorus glass is removed, is provided.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vibrating transducer capable of imparting initial tension to a vibrating beam made of polysilicon and reliably preventing buckling even when compression is applied to the vibrating beam, and a method of manufacturing the same. Things.

[0002]

2. Description of the Related Art FIG. 28 is a diagram for explaining the principle of a conventional example generally used in the prior art.
No. 0254.

In FIG. 1, reference numeral 1 denotes a silicon semiconductor substrate. 2 is formed on a silicon semiconductor substrate 1;
This is a vibrating beam made of polysilicon formed by a normal semiconductor process. Both ends of the vibrating beam 2 are fixed to the substrate 1.

In the above configuration, when the measuring force F applied to both ends of the vibrating beam 2 changes, the resonance frequency of the vibrating beam 2 changes. Therefore, conversely, if the change in the resonance frequency of the vibrating beam 2 is measured, the measuring force F applied to both ends of the vibrating beam 2
Can be measured.

[0005] As shown in Figs. 29 to 32, such an apparatus is manufactured as follows. (A) As shown in FIG. 29, a silicon semiconductor substrate 101
A sacrificial layer oxide film 102 is formed thereon. (B) As shown in FIG. 30, a predetermined portion 103 of the sacrificial layer oxide film 102 is etched.

(C) As shown in FIG. 31, the sacrifice layer oxide film 1
A polysilicon film 104 is formed on the semiconductor substrate 101 at 02 and at a predetermined location 103. (D) As shown in FIG. 32, the sacrificial layer oxide film 102 is removed by etching.

[0007]

However, in such a vibrating transducer manufactured using a general surface micromachining technique, the vibrating beam 2 is made of polysilicon. In the polysilicon film formed under the above film forming conditions, a considerably large residual compressive strain remains.

[0008] To remove the residual compression strain, 700
Although annealing is performed at a high temperature of not less than ° C., the magnitude of the residual strain varies depending on the annealing temperature, and there is a problem that high-temperature heat treatment is limited in a process in a later step. In addition, this method has a problem that the vibrating beam 2 cannot maintain a large residual tensile strain at all.

On the other hand, a compressive strain may be applied to the vibrating transducer due to a strain due to a differential pressure, a strain due to a static pressure, a strain due to a temperature, or the like. In this case, the vibrating beam 2 buckles. Need to be kept away. In particular, in order to perform high-precision differential pressure measurement, it is adopted to provide two vibrating beams 2 on a diaphragm for detecting a differential pressure and perform a differential operation.

In this case, the vibrating beams 2 are arranged on the diaphragm such that tensile strain is applied to one vibrating beam 2 and compressive strain is applied to the other vibrating beam 2. At this time, compressive strain is applied to the vibrating beam 2 arranged on the side to which compressive strain is applied through the diaphragm. In this case, in order to ensure that the vibrating beam 2 does not buckle,
In advance, a tensile strain against the compressive strain must be provided.

The present invention solves this problem. An object of the present invention is to provide a vibratory transducer capable of imparting initial tension to a vibrating beam made of polysilicon and reliably preventing buckling even when compression is applied to the vibrating beam, and a method of manufacturing the same.

[0012]

In order to achieve this object, the present invention provides: (1) measuring a resonance frequency of a vibrating beam having both ends fixed to a substrate; In the vibration transducer for measuring strain, the phosphorus glass is removed after being formed into a film of phosphorus glass so as to obtain a predetermined initial tension by high-concentration doping of phosphorus, and then driven in heated nitrogen. A vibrating transducer, comprising: a vibrating beam made of polysilicon which is subjected to high-speed annealing by lamp annealing. (2) The vibrating transducer according to claim 1, wherein a heat treatment is applied to the vibrating beam made of polysilicon to control initial tension. (3) A method of manufacturing a vibrating transducer for measuring the strain applied to both ends of a vibrating gate by measuring the resonance frequency of the vibrating gate having both ends fixed to the substrate, comprising the following steps. Of manufacturing a vibrating transducer. (A) forming a sacrificial layer oxide film on a semiconductor substrate having a first conductivity type; (B) a sacrificial layer oxide film partial etching step of etching and removing a predetermined portion of the sacrificial layer oxide film; (C) forming a polysilicon film on the sacrificial oxide film and the semiconductor substrate at the predetermined location. (D) a phosphorus glass forming step of forming phosphorus glass on the polysilicon film. (E) A phosphorus drive-in step of performing a heat treatment in nitrogen. (F) A phosphorus glass removing step of removing the phosphorus glass by etching. (G) A lamp annealing step for performing high-speed annealing by lamp annealing. (H) a sacrificial layer oxide film etching step of removing the sacrificial layer oxide film by etching. (4) A method for manufacturing a vibrating transducer for measuring a strain applied to both ends of a vibrating gate by measuring a resonance frequency of the vibrating gate having both ends fixed to the substrate, comprising the following steps. Of manufacturing a vibrating transducer. (A) forming a sacrificial layer oxide film on a semiconductor substrate having a first conductivity type; (B) a sacrificial layer oxide film partial etching step of etching and removing a predetermined portion of the sacrificial layer oxide film; (C) forming a polysilicon film on the sacrificial oxide film and the semiconductor substrate at the predetermined location. (D) a phosphorus glass forming step of forming phosphorus glass on the polysilicon film. (E) A phosphorus drive-in step of performing a heat treatment in nitrogen. (F) A phosphorus glass removing step of removing the phosphorus glass by etching. (G) A lamp annealing step for performing high-speed annealing by lamp annealing. (H) a sacrificial layer oxide film etching step of removing the sacrificial layer oxide film by etching. (I) an initial tension control step of heating to control the initial tension of the polysilicon film. Is adopted.

[0013]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS FIG. 1 is an explanatory view of a main part of an embodiment of the present invention. In the figure, reference numeral 11 denotes a silicon substrate.

[0014] In the step 12, after the phosphorus glass is formed so as to obtain a predetermined initial tension by a high concentration doping of phosphorus, the phosphorus glass is driven in in heated nitrogen, and then the phosphorus glass is removed. This is a vibrating beam made of polysilicon which has been subjected to high-speed annealing by lamp annealing. Both ends of the vibrating beam 12 are fixed to the silicon substrate 11.

In the above configuration, when the measuring force F applied to both ends of the vibrating beam 12 changes, the resonance frequency of the vibrating beam 12 changes. Therefore, by measuring the change in the resonance frequency of the vibrating beam 12, the measuring force F applied to both ends of the vibrating beam 12 can be measured.

Such an apparatus is manufactured as follows, as shown in FIGS. (A) As shown in FIG. 2, a sacrificial layer oxide film 202 is formed on a silicon semiconductor substrate 201. (B) As shown in FIG. 3, a predetermined portion 203 of the sacrificial layer oxide film 202 is etched.

(C) As shown in FIG. 4, the sacrificial layer oxide film 20
2 and a polysilicon film 204 is formed on the semiconductor substrate 201 at a predetermined position 203. (D) As shown in FIG. 5, a phosphorus glass 205 is formed on the polysilicon film 204 at a temperature of about 850 ° C. or less.

(E) As shown in FIG.
And drive in in nitrogen. (F) As shown in FIG. 7, the phosphorus glass 205 is removed by etching. (G) As shown in FIG. 8, high-speed annealing by lamp annealing is performed. (H) As shown in FIG. 9, unnecessary portions of the polysilicon film 204 are removed by etching so as to have the shape of the vibrating beam 12. (H) As shown in FIG. 10, the sacrifice layer oxide film 202 is removed by etching.

According to the experiment of the inventor of the present invention, according to the conventional example shown in FIG. 28, for example, the tension is about -600 με, and in the present invention, a value of about 1000 με is obtained. In order to reduce the tension and obtain the required tension,
By adding a heat step of 700 ° C. or more, it is possible to control to obtain a required tension.

As a result, (1) a phosphor glass is formed on a vibrating beam made of polysilicon, driven in nitrogen under heating, and lamp-annealed to form a vibrating beam made of polysilicon. Because the initial tension that can resist the strain was obtained, where the compressive strain is applied,
A vibrating transducer having a vibrating beam made of polysilicon which can be used with high reliability is obtained.

(2) In a normal semiconductor process, phosphorus doping is used in order to impart conductivity to polysilicon. In this case, annealing is performed in oxygen. Under these conditions, silicon oxide is generated and tension cannot be generated.

In the present invention, by driving in nitrogen under heating, accelerated oxidation at the grain boundaries of silicon crystal grains can be suppressed, and the vibration beam made of polysilicon can resist compressive strain. It was possible to obtain an initial tension for the first time.

(3) At a temperature of 700 ° C. or higher, polysilicon is plastically deformed. Focusing on this point, in the present invention, 7
By applying a heat step of at least 00 ° C., a vibrating beam made of polysilicon having a predetermined tension can be easily obtained from a vibrating beam made of polysilicon having a large value of tension.

FIG. 11 is a perspective view showing a main part of another embodiment of the present invention. For example, the present invention is applied to an example in which a vibration type transducer is used as a pressure sensor shown in Japanese Patent Application Laid-Open No. 7-30128. It was done. FIG. 12 is a cross-sectional view near the center of FIG. However, a shell portion and a diaphragm portion covering the vibration gate are omitted. FIG. 13 is an overall side sectional view of a central portion of the vibration gate.

Referring to FIGS. 11, 12, and 13, a silicon substrate 21 has, for example, a p-type conduction type, and an n-type impurity is diffused on the upper surface of the silicon substrate 21 to form a source S. Here, an aluminum electrode 22 for extracting the potential of the source S is connected to a wiring portion W indicated by a dotted line.
It is formed through _S. In addition, this silicon substrate 2
Not shown on the lower surface of one the pressure P _M to be measured here is formed on the diaphragm recessed is applied.

An n-type impurity is also diffused into the upper surface of the silicon substrate 21 at a predetermined distance from the source S to form a drain D, where the drain D is formed.
Aluminum electrodes 23 for taking out the potential of the are formed through the wiring portion W _D shown by a dotted line.

[0027] Above the silicon substrate 21, the fixed end 24, 25 separated by a gap x ₂ is formed. Thus,
After the impurities are diffused and the conductivity is imparted, and a predetermined initial tension is obtained by high-concentration doping of phosphorus, after the phosphorus glass is formed, it is driven in in heated nitrogen, Both ends of the plate-shaped vibrating gate 26 made of polysilicon which has been subjected to high-speed annealing by lamp annealing with phosphorus glass removed are fixed ends 2 of these.
4 and 25 are integrally fixed.

The length of the beam of the vibration gate 26 is L. The vibration gate 26 is made of an aluminum electrode 27.
When, it is connected via a wiring portion W _G indicated by the dotted line.
That is, the vibrating gate 26 and the silicon substrate 21, are spaced apart by a gap x ₂ except the ends, channel CNN2 is formed between the drain D and the source S of the silicon substrate 21 corresponding to the vibration gate 26 You.

On the drain D, the channel CNN2 and the source S formed on the upper surface of the silicon substrate 21, a two-layer structure film 31 composed of a polysilicon protective film 28 and an oxide film 29 is formed. The protective film 28 is an insulator similar to the oxide film 29.

A gap is provided between the two-layer structure film 31 and the vibration gate 26 so that the vibration gate 26 can vibrate up and down with the fixed ends 24 and 25 as nodes.
Thus, the vibration gauge 32 is configured. 33
Is a shell, and 34 is a diaphragm.

Next, a manufacturing method for manufacturing the vibration gauge 22 as a component of such a vibration type transducer will be described with reference to manufacturing process diagrams shown in FIGS.

(1) FIG. 14 shows a step of forming a gate oxide film. A gate oxide film 302 is formed on a p-type silicon single crystal substrate 301 to a thickness of, for example, about 500 angstroms.

(2) FIG. 15 shows an ion implantation step.
Here, phosphorus is ion-implanted as an n-type impurity into a predetermined region corresponding to the source 303, the drain 304, and the lead portion of the gate.

(3) FIG. 16 shows that the resistance between the source 303 and the drain 304 can be controlled by ion-implanting phosphorus into the channel portion 305 at a shallow depth if necessary. is there.

(4) FIG. 17 shows a step of forming a polysilicon protective film. In this step, the polysilicon protective film 306, which has a high resistance to hydrofluoric acid (HF) used in the subsequent step, serves as a protective film for the gate oxide film 302, and is a stable film, is replaced by almost 5000 A film having a thickness of about Å is formed on the gate oxide film 302.

(5) FIG. 18 shows a step of forming a first sacrificial layer oxide film. In this step, first, the vibration gate 26
As a lower sacrificial layer for forming a void around the substrate, for example, by CVD (Chemical Vapor Deposition).
A first sacrificial layer oxide film 307 is formed on the polysilicon protective film 306 to a thickness of about 000 angstroms.

(6) FIG. 19 shows a beam forming step. This step is a pre-step for finally forming the vibration gate 26. First, a polysilicon film 308 (not shown) is formed on the first sacrificial layer oxide film 307 to a thickness of, for example, about 1 μm. After that, phosphorus is doped to impart conductivity.

The phosphorus doping imparts conductivity to the vibration gate 26 and also imparts an initial tension. Phosphorus dope spin-coats phosphorus glass at room temperature, raises the temperature to 1000 ° C., drives in nitrogen, and then removes the phosphorus glass. Next, high-speed annealing by lamp annealing is performed.

Next, a portion corresponding to the vibrating gate 26 is masked by photolithography,
Polysilicon 3 by IE (Reactive Ion Etching)
08 (not shown) is etched into a predetermined shape to form a plate-like beam 309 that finally becomes the vibration gate 26.

(7) FIG. 20 shows a step of forming a second sacrificial layer oxide film. In this step, first, the vibration gate 26
The first sacrificial layer oxide film 307 and the beam 30 are formed to a thickness of about 5000 angstroms by, for example, the CVD method as a sacrificial layer except for the lower side for forming a void around the periphery.
9, a second sacrificial layer oxide film 401 is formed.

(8) FIG. 21 shows a step of forming a gap corresponding portion. First, the vicinity of the beam 309 is masked at the center of the vibration gate 26 by photolithography, and then the surrounding first sacrifice layer oxide film 307 and second sacrifice layer oxide film 401 are covered with hydrofluoric acid. The gap corresponding portion 402 is formed by etching.

(9) FIG. 22 shows a step of forming a gap corresponding film. In this step, a gap-corresponding oxide film 403 as a sacrificial layer for introducing an etchant, which is used in a later step, is formed with a thickness of about 500 Å,
The entire surface including the polysilicon protective film 306 and the gap corresponding portion 402 is formed by the CVD method.

(10) FIG. 23 shows a step of forming a shell corresponding portion. Gap corresponding oxide film 403 formed in FIG.
The polysilicon film 4 is formed thereon so as to have a thickness of about 1 μm.
04 (not shown).

Thereafter, masking is performed using a photolithography technique, the polysilicon film 404 is etched by RIE, and a shell corresponding portion 405 is formed in a range of a size covering the vibration gate 26.

(11) FIG. 24 shows an etching gap forming step. In this step, in order to form the vibration gate 26 and the shell corresponding portion 405, while etching the gap corresponding oxide film 403 using hydrofluoric acid, the gap corresponding oxide film 403 is removed to form an introduction hole 406. Inlet hole 40
6, the gap corresponding portion 402 is also removed. Thus, the vibration gate 26 and the shell corresponding portion 405 are formed.

(12) FIG. 25 shows a vacuum sealing step.
In this step, the shell corresponding portion 405, the introduction hole 40
6. A polysilicon film 407 is formed on the polysilicon protective film 306 to a thickness of about 1 μm to form a shell 23.
Is maintained in a vacuum.

(13) FIG. 26 shows a step of forming an electrode. Portions of the gate oxide film 302, the polysilicon protective film 306, and the polysilicon film 407 above the source portion 303 and the drain portion 304 are opened using photolithography and RIE to form contact holes 40.
8,409 are formed.

Thereafter, contact holes 408 and 409
Next, aluminum is deposited by a sputtering method,
Pad portions 501 and 502 using a photography technique
To form Wiring is performed by bonding with a gold wire.

(14) FIG. 27 shows a diaphragm forming step. The diaphragm 24 is formed by etching the bottom of the silicon single crystal substrate 301 using a potassium hydroxide (KOH) solution so that the central portion becomes thinner and the periphery becomes thicker.

The manufacturing method of forming the diaphragm 34 by covering the vibration gauge 32 of the vibration type transducer with the shell 33 has been described above.

According to the manufacturing method of the present invention as described above, the gate insulating film is protected, the drift can be prevented, the attachment of the vibration gate can be prevented, and the initial tension is applied to the vibration beam made of polysilicon. , A vibration transducer that can reliably prevent buckling even when compression is applied to the vibrating beam,
It is possible to obtain a method of manufacturing a vibrating transducer that can be manufactured inexpensively and reliably using a conventional semiconductor process.

[0052]

As described above in detail with the embodiments, according to the first aspect of the present invention, (1) a phosphor glass is formed on a vibrating beam made of polysilicon, and By driving in nitrogen, a vibrating beam made of polysilicon can be provided with an initial tension that can resist compressive strain, so that it can be used reliably where compressive strain is applied. A vibrating transducer having a vibrating beam made of polysilicon is obtained.

(2) In a normal semiconductor process, phosphorus doping is used in order to impart conductivity to polysilicon. In this case, annealing is performed in oxygen. Under these conditions, silicon oxide is generated and tension cannot be generated.

In the present invention, by driving in nitrogen under heating, accelerated oxidation at the grain boundaries of silicon crystal grains can be suppressed, so that the vibrating beam made of polysilicon can resist compressive strain. It is possible to obtain a proper initial tension for the first time.

According to the second aspect of the present invention, at a temperature of 700 ° C. or more, polysilicon is plastically deformed. Focusing on this point, in the present invention, by applying a heat process at 700 ° C. or more, a vibrating beam made of polysilicon having a predetermined tension can be easily changed from a vibrating beam made of polysilicon having a large value of tension. Is obtained.

According to the third aspect of the present invention, there is provided a vibration type transducer capable of imparting initial tension to a vibrating beam made of polysilicon and reliably preventing buckling even when compression is applied to the vibrating beam. And a method of manufacturing a vibrating transducer that can be manufactured reliably and inexpensively using the semiconductor process described above.

According to the fourth aspect of the present invention, tension control can be easily performed so that a predetermined initial tension can be applied to the vibrating beam made of polysilicon, and buckling can be prevented even when compression is applied to the vibrating beam. According to the present invention, it is possible to obtain a method of manufacturing a vibratory transducer which can be reliably and inexpensively manufactured by using a conventional semiconductor process.

Therefore, according to the present invention, there is provided a vibrating transducer capable of imparting initial tension to a vibrating beam made of polysilicon and reliably preventing buckling even when compression is applied to the vibrating beam, and a method of manufacturing the same. Can be realized.

[Brief description of the drawings]

FIG. 1 is an explanatory diagram of a main part configuration of an embodiment of the present invention.

FIG. 2 is an explanatory view of a sacrifice layer oxide film forming step of FIG. 1;

FIG. 3 is an explanatory view of a step of partially etching a sacrifice layer oxide film of FIG. 1;

FIG. 4 is an explanatory view of a polysilicon film forming step of FIG. 1;

FIG. 5 is an explanatory view of a phosphorus glass forming step of FIG. 1;

FIG. 6 is an explanatory view of a nitrogen drive-in step of FIG. 1;

FIG. 7 is an explanatory view of a phosphorus glass removing step of FIG. 1;

FIG. 8 is an explanatory view of a high-speed annealing step by lamp annealing of FIG. 1;

FIG. 9 is an explanatory view of a vibrating beam forming step of FIG. 1;

FIG. 10 is an explanatory view of a sacrificial layer oxide film etching step of FIG. 1;

FIG. 11 is a perspective view of a main part of another embodiment of the present invention.

FIG. 12 is a cross-sectional view near the center of FIG.

FIG. 13 is an overall side sectional view of a central portion of the vibration gate of FIG. 11;

FIG. 14 is an explanatory diagram of a gate oxide film forming step of FIG. 11;

FIG. 15 is an explanatory view of the ion implantation step of FIG. 11;

FIG. 16 is an explanatory view of the ion implantation step of FIG. 11;

FIG. 17 is an explanatory view of a polysilicon protective film forming step of FIG. 11;

FIG. 18 is an explanatory diagram of a first sacrificial layer oxide film forming step of FIG. 11;

19 is an explanatory view of a beam forming step in FIG. 11;

20 is an explanatory diagram of a second sacrificial layer oxide film forming step of FIG.

FIG. 21 is an explanatory view of a gap corresponding portion forming step of FIG. 11;

FIG. 22 is an explanatory view of the gap-forming film forming step of FIG. 11;

FIG. 23 is an explanatory diagram of a shell corresponding portion forming step of FIG. 11;

FIG. 24 is an explanatory diagram of an etching gap forming step of FIG. 11;

FIG. 25 is an explanatory view of a vacuum sealing step in FIG. 11;

FIG. 26 is an explanatory diagram of the electrode forming step of FIG. 11;

FIG. 27 is an explanatory diagram of the diaphragm forming step of FIG. 11;

FIG. 28 is an explanatory diagram of a configuration of a conventional example generally used in the related art.

29 is an explanatory diagram of the sacrificial layer oxide film forming step of FIG. 28. FIG.

FIG. 30 is an explanatory view of a step of partially etching the sacrifice layer oxide film of FIG. 28;

FIG. 31 is an explanatory diagram of the polysilicon film forming step of FIG. 28.

32 is an explanatory diagram of the sacrificial layer oxide film removing step of FIG. 28. FIG.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 11 Silicon substrate 12 Vibration beam 21 Silicon substrate 22 Electrode 23 Electrode 24 Fixed end 25 Fixed end 26 Vibration gate 27 Electrode 28 Polysilicon protective film 29 Gate oxide film 31 Two-layer structure film 32 Vibration gauge 33 Shell 34 Diaphragm 201 Silicon substrate 202 Sacrifice Layer 203 Predetermined location 204 Polysilicon film 205 Phosphorus glass 301 Silicon substrate 302 Gate oxide film 303 Source 304 Drain 305 Channel section 306 Polysilicon protective film 307 First sacrificial layer oxide film 308 Polysilicon 309 Beam 401 Second sacrificial layer oxide film 402 Gap corresponding portion 403 gap corresponding oxide film 404 polysilicon film 405 shell corresponding portion 406 introduction hole 407 polysilicon film 408 contact hole 409 contact hole 501 pad portion 02 pad portion S source D drain E1 DC power source E2 DC power supply CNN1 channel CNN2 channel

Claims (4)

[Claims] 1. A vibrating transducer for measuring the strain applied to both ends of a vibrating beam by measuring the resonance frequency of the vibrating beam having both ends fixed to a substrate, wherein a predetermined initial tension is applied by high-concentration doping of phosphorus. A vibrating beam made of polysilicon formed by forming a film of phosphor glass and then driving in heated nitrogen to remove the phosphor glass and performing high-speed annealing by lamp annealing. A vibration type transducer characterized by the above-mentioned. 2. The vibrating transducer according to claim 1, wherein a heat treatment is applied to said vibrating beam made of polysilicon to control initial tension. 3. A method of manufacturing a vibrating transducer for measuring a strain applied to both ends of a vibrating gate by measuring a resonance frequency of the vibrating gate having both ends fixed to a substrate, comprising the following steps. A method of manufacturing a vibration type transducer. (A) forming a sacrificial layer oxide film on a semiconductor substrate having a first conductivity type; (B) a sacrificial layer oxide film partial etching step of etching and removing a predetermined portion of the sacrificial layer oxide film; (C) forming a polysilicon film on the sacrificial oxide film and the semiconductor substrate at the predetermined location. (D) a phosphorus glass forming step of forming phosphorus glass on the polysilicon film. (E) A phosphorus drive-in step of performing a heat treatment in nitrogen. (F) A phosphorus glass removing step of removing the phosphorus glass by etching. (G) A lamp annealing step for performing high-speed annealing by lamp annealing. (H) a sacrificial layer oxide film etching step of removing the sacrificial layer oxide film by etching. 4. A method of manufacturing a vibrating transducer for measuring a strain applied to both ends of a vibrating gate by measuring a resonance frequency of the vibrating gate having both ends fixed to a substrate, comprising the following steps: A method of manufacturing a vibration type transducer. (A) forming a sacrificial layer oxide film on a semiconductor substrate having a first conductivity type; (B) a sacrificial layer oxide film partial etching step of etching and removing a predetermined portion of the sacrificial layer oxide film; (C) forming a polysilicon film on the sacrificial oxide film and the semiconductor substrate at the predetermined location. (D) a phosphorus glass forming step of forming phosphorus glass on the polysilicon film. (E) A phosphorus drive-in step of performing a heat treatment in nitrogen. (F) A phosphorus glass removing step of removing the phosphorus glass by etching. (G) A lamp annealing step for performing high-speed annealing by lamp annealing. (H) a sacrificial layer oxide film etching step of removing the sacrificial layer oxide film by etching. (I) an initial tension control step of heating to control the initial tension of the polysilicon film;