JPH10107095A - Mounting structure and repairing method for semiconductor device - Google Patents
Mounting structure and repairing method for semiconductor deviceInfo
- Publication number
- JPH10107095A JPH10107095A JP26038896A JP26038896A JPH10107095A JP H10107095 A JPH10107095 A JP H10107095A JP 26038896 A JP26038896 A JP 26038896A JP 26038896 A JP26038896 A JP 26038896A JP H10107095 A JPH10107095 A JP H10107095A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- resin
- semiconductor
- circuit board
- mounting structure
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/225—Correcting or repairing of printed circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/284—Applying non-metallic protective coatings for encapsulating mounted components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
Landscapes
- Wire Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、各種機器に内蔵さ
れる半導体素子と半導体装置の実装構造とリペア方法に
関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mounting structure of a semiconductor device and a semiconductor device incorporated in various devices and a repair method.
【０００２】[0002]
【従来の技術】従来、回路基板などへのベアチップ実装
やチップサイズパッケージの実装において、熱膨張係数
の大きく異なる材料を接続する際、接続信頼性を向上さ
せる目的で、半導体素子と回路基板との間に樹脂を封止
して補強する構造が提案されている。また、修理交換が
必要になった場合、半導体素子を回路基板から取り外
し、回路基板に残った樹脂を除去する方法が提案されて
いる。2. Description of the Related Art Conventionally, when connecting materials having greatly different coefficients of thermal expansion in mounting a bare chip or a chip size package on a circuit board or the like, in order to improve connection reliability, a semiconductor element and a circuit board are connected. There has been proposed a structure in which a resin is sealed and reinforced between them. In addition, a method has been proposed in which, when repair and replacement become necessary, the semiconductor element is removed from the circuit board and the resin remaining on the circuit board is removed.
【０００３】たとえばＵＶ性の接着剤を用いて、取り外
しの際には再度紫外線を照射させてＵＶ性接着剤を劣化
させる方法が知られている。For example, a method is known in which a UV adhesive is used, and when detached, ultraviolet rays are again irradiated to deteriorate the UV adhesive.
【０００４】また、特開平５−１０９８３８号公報で
は、回路基板に残留した樹脂にさらにより高い強度の接
着剤を塗布し、剥離用板を用いて加熱し取り外す方法を
提案している。Japanese Patent Application Laid-Open No. Hei 5-109838 proposes a method in which an adhesive having higher strength is applied to a resin remaining on a circuit board, and the resin is removed by heating using a peeling plate.
【０００５】さらに、特開平６−５６６４号公報では基
板に残った樹脂を研削カッターで除去する方法を提案し
ている。Further, Japanese Patent Application Laid-Open No. 6-5664 proposes a method of removing the resin remaining on the substrate with a grinding cutter.
【０００６】[0006]
【発明が解決しようとする課題】しかし、ＵＶ性の接着
剤を用いる場合は、硬化の際紫外線照射のみでは不十分
で熱による硬化も必要で、処理工程が複雑になるという
欠点がある。However, in the case of using a UV adhesive, there is a drawback in that the ultraviolet irradiation alone is not sufficient at the time of curing and curing by heat is required, which complicates the treatment process.
【０００７】また特開平５−１０９８３８号公報の方法
では、最初の樹脂より高い強度の接着剤を塗布するた
め、取り外しの際回路基板の電極やパターンが損傷を受
ける恐れがある。In the method disclosed in JP-A-5-109838, an adhesive having a higher strength than that of the first resin is applied, so that the electrodes and patterns on the circuit board may be damaged during removal.
【０００８】さらに、特開平６−５６６４号公報ではカ
ッターによる研削の為、カッターの制御が不十分である
と回路基板を損傷させる恐れがある。Further, in Japanese Patent Application Laid-Open No. 6-5664, the circuit board may be damaged if the control of the cutter is insufficient due to the grinding by the cutter.
【０００９】本発明は、このような従来の課題を解決
し、加熱などの一般的な工程で樹脂による補強を行うこ
とができ、回路基板に損傷を与えることなく修理交換可
能な構造を提供するものである。The present invention solves such a conventional problem, and provides a structure that can be reinforced with a resin in a general process such as heating and can be repaired and replaced without damaging a circuit board. Things.
【００１０】[0010]
【課題を解決するための手段】前記課題を解決するため
に、本発明の実装構造は半導体装置と回路基板を分離す
ることができるように、半導体装置と回路基板との間
を、２００度における引っ張りせん断強度が室温におけ
る強度の２０％になる樹脂で封止することとしたもので
ある。In order to solve the above-mentioned problems, the mounting structure of the present invention is designed so that the semiconductor device and the circuit board can be separated from each other at a 200 degree angle so that the semiconductor device and the circuit board can be separated. The resin is sealed with a resin having a tensile shear strength of 20% of the strength at room temperature.
【００１１】本発明によれば樹脂を封止した後でもリペ
アが可能である。According to the present invention, repair is possible even after sealing the resin.
【００１２】[0012]
【発明の実施の形態】本発明の請求項１に記載の発明は
半導体素子と半導体キャリアの間または半導体装置と回
路基板との間の内少なくとも一方を、２００度以上にお
ける引っ張りせん断強度が室温における強度の２０％以
下になる熱硬化性樹脂で封止した実装構造としたもので
あり、不良が生じた場合は半導体素子または半導体装置
を半導体キャリアまたは回路基板から取り外すことがで
きるという作用を有する。DETAILED DESCRIPTION OF THE INVENTION According to the first aspect of the present invention, at least one of between a semiconductor element and a semiconductor carrier or between a semiconductor device and a circuit board has a tensile shear strength at 200 degrees or more at room temperature. The mounting structure is sealed with a thermosetting resin having a strength of 20% or less, and has a function of removing a semiconductor element or a semiconductor device from a semiconductor carrier or a circuit board when a defect occurs.
【００１３】また本発明の請求項５に記載の発明は、半
導体キャリアに実装された半導体素子または回路基板に
実装された半導体装置の内少なくとも一方を、樹脂を封
止した後に取り外しを行うリペア方法であって、樹脂を
所定温度の熱風で一定時間加熱する工程と、半導体素子
または半導体装置を取り外す工程と、半導体キャリアま
たは回路基板に残った樹脂を所定温度に保ちグリコール
エーテル系の洗浄剤に浸漬させてかきとることで除去す
る工程を順次おこなうこととしたものであり、新たな半
導体素子または半導体装置もしくは新たな半導体キャリ
アもしくは回路基板を用いて再度実装する事が出来ると
いう作用を有する。According to a fifth aspect of the present invention, there is provided a repair method for removing at least one of a semiconductor element mounted on a semiconductor carrier or a semiconductor device mounted on a circuit board after sealing a resin. Heating the resin with hot air at a predetermined temperature for a predetermined time, removing the semiconductor element or the semiconductor device, and immersing the resin remaining on the semiconductor carrier or the circuit board at a predetermined temperature in a glycol ether-based cleaning agent. The step of removing by scraping is performed sequentially, and has the effect of being able to be mounted again using a new semiconductor element or semiconductor device or a new semiconductor carrier or circuit board.
【００１４】[0014]
【実施例】以下に、本発明の一実施例について、図面を
用いて説明する。DESCRIPTION OF THE PREFERRED EMBODIMENTS One embodiment of the present invention will be described below with reference to the drawings.
【００１５】（実施例）図１は本発明の一実施例におけ
る半導体装置の実装構造の要部断面図を示す。(Embodiment) FIG. 1 is a sectional view showing a main part of a mounting structure of a semiconductor device according to an embodiment of the present invention.
【００１６】図１において、符号１は半導体装置、２は
半導体素子、３はバンプ、４は導電性接着剤、５は半導
体キャリア側の電極、６は封止樹脂（半導体素子〜半導
体キャリア間）、７は半導体キャリア、８は半導体装置
側の電極、９ははんだ、１０は回路基板側の電極、１１
は封止樹脂（半導体装置〜回路基板間）、１２は回路基
板である。本発明の一実施例に用いた部材の詳細を（表
１）に、熱硬化性樹脂の温度−引っ張りせん断強度特性
図を（表２）に示す。なお、本発明実施例における室温
とは摂氏２５度〜摂氏３０度の範囲を言う。In FIG. 1, reference numeral 1 denotes a semiconductor device, 2 denotes a semiconductor element, 3 denotes a bump, 4 denotes a conductive adhesive, 5 denotes an electrode on the semiconductor carrier side, and 6 denotes a sealing resin (between the semiconductor element and the semiconductor carrier). , 7 are semiconductor carriers, 8 is an electrode on the semiconductor device side, 9 is solder, 10 is an electrode on the circuit board side, 11
Denotes a sealing resin (between the semiconductor device and the circuit board), and 12 denotes a circuit board. Table 1 shows details of members used in one example of the present invention, and Table 2 shows a temperature-tensile shear strength characteristic diagram of the thermosetting resin. The room temperature in the embodiment of the present invention means a range of 25 degrees Celsius to 30 degrees Celsius.
【００１７】[0017]
【表１】 [Table 1]
【００１８】[0018]
【表２】 [Table 2]
【００１９】半導体装置１は、バンプ３を備えた半導体
素子２を導電性接着剤４（例えば、エポキシ樹脂などに
銀またはカーボン等の粉末粒子を配合したもの。）を介
して電極５を備えた半導体キャリア７の上に搭載し、両
者間とその周囲に封止樹脂６を備えた構造を有してい
る。The semiconductor device 1 has an electrode 5 on a semiconductor element 2 provided with a bump 3 via a conductive adhesive 4 (for example, an epoxy resin or the like mixed with powder particles of silver or carbon). It has a structure in which it is mounted on a semiconductor carrier 7 and a sealing resin 6 is provided between and around the semiconductor carrier 7.
【００２０】この半導体装置１を回路基板１２にはんだ
づけ実装し、両者の間に封止樹脂１１を塗布する。塗布
量は約５０ｍｇ程度である。その後、摂氏約１００度
（摂氏９０度〜摂氏１１０度）の雰囲気の加熱硬化炉で
１時間硬化させることにより回路基板への実装をおこな
うことができる。The semiconductor device 1 is mounted on a circuit board 12 by soldering, and a sealing resin 11 is applied between the two. The application amount is about 50 mg. Thereafter, the substrate is cured for 1 hour in a heating and curing furnace in an atmosphere of about 100 degrees Celsius (90 degrees Celsius to 110 degrees Celsius), so that it can be mounted on a circuit board.
【００２１】次に回路基板に搭載した半導体装置の修理
交換の必要が生じた場合は、以下の手順でおこなう。Next, when it becomes necessary to repair or replace the semiconductor device mounted on the circuit board, the following procedure is performed.
【００２２】図２は本発明の一実施例における半導体装
置の取り外し過程の概念の説明図である。FIG. 2 is an explanatory view of the concept of the process of removing a semiconductor device according to one embodiment of the present invention.
【００２３】図２（１）に示すようにまず熱風発生装置
を用いて、はんだ９と封止樹脂１１を摂氏約２５０度
（摂氏２４０度〜摂氏２６０度）の熱風で約１分間加熱
する。加熱によりはんだ９は溶融する。また、封止樹脂
１１も軟化し接着強度が低下する。As shown in FIG. 2A, first, the solder 9 and the sealing resin 11 are heated with hot air of about 250 degrees Celsius (240 degrees Celsius to 260 degrees Celsius) for about 1 minute using a hot air generator. The heating melts the solder 9. Also, the sealing resin 11 is softened, and the adhesive strength is reduced.
【００２４】次に図２（２）に示すように、機械的に不
良の半導体装置１を回路基板１２から取り外す。Next, as shown in FIG. 2B, the mechanically defective semiconductor device 1 is removed from the circuit board 12.
【００２５】次に、回路基板１２に残った封止樹脂１１
を取り除くため、ホットプレートで回路基板１２を摂氏
約１００度（摂氏９０度〜摂氏１１０度）に保温すると
ともに、洗浄剤を浸漬させて封止樹脂１１を膨潤させ接
着強度を低下させる。Next, the sealing resin 11 remaining on the circuit board 12
In order to remove the heat, the circuit board 12 is kept at a temperature of about 100 degrees Celsius (90 degrees Celsius to 110 degrees Celsius) with a hot plate, and a cleaning agent is immersed to swell the sealing resin 11 to lower the adhesive strength.
【００２６】この状態で封止樹脂１１をかきとるなどの
手段により、図２（３）に示すように回路基板１２から
樹脂１１を除去する。In this state, the resin 11 is removed from the circuit board 12 by means such as scraping off the sealing resin 11 as shown in FIG.
【００２７】図２（４）では、回路基板１２の電極１０
に残ったはんだ９を、はんだ吸い取り用編組線で除去
し、回路基板１２を平滑にする。In FIG. 2D, the electrodes 10 on the circuit board 12 are shown.
The remaining solder 9 is removed by a braided wire for desoldering, and the circuit board 12 is smoothed.
【００２８】図２（５）では、回路基板１２の電極部に
はんだ９を印刷し、良品の半導体装置１を再度実装す
る。In FIG. 2 (5), the solder 9 is printed on the electrode portions of the circuit board 12, and the non-defective semiconductor device 1 is mounted again.
【００２９】なお、上記手順は不良品の半導体装置を良
品の半導体装置と交換する手順を示したもので、同様に
して不良の回路基板を良品の回路基板と交換することが
できる。その際は半導体装置側の電極面を平滑に処理す
ればよいことはいうまでもない。The above procedure shows a procedure for replacing a defective semiconductor device with a non-defective semiconductor device. Similarly, a defective circuit board can be replaced with a non-defective circuit board. In this case, it goes without saying that the surface of the electrode on the semiconductor device side may be smoothed.
【００３０】以上のように本発明の実施例によれば、熱
硬化性樹脂を用いているので、処理工程が単純で、室温
における引っ張りせん断強度が２０Ｎ／ｍｍ↑２以上で
あれば接続信頼性を確保できることを確認した。As described above, according to the embodiment of the present invention, since the thermosetting resin is used, the processing step is simple, and if the tensile shear strength at room temperature is 20 N / mm ↑ 2 or more, the connection reliability is improved. We confirmed that we could secure.
【００３１】図３に引っ張りせん断強度が１６Ｎ／ｍｍ
↑２であるスリーンボンド社製の樹脂、ＴＢ３００６Ｂ
と比較した熱衝撃試験（−４０〜＋８０度各３０分間）
の信頼性試験結果を示す。FIG. 3 shows that the tensile shear strength is 16 N / mm.
# 2 Resin bond resin, TB3006B
Shock test (-40 to +80 degrees for 30 minutes each)
2 shows the results of the reliability test.
【００３２】また、本発明の実施例における樹脂は摂氏
２００度以上における引っ張りせん断強度が室温におけ
る強度の２０％以下になるので半導体装置を容易に回路
基板から取り外すことが出来る。Further, since the resin in the embodiment of the present invention has a tensile shear strength at 200 ° C. or more of 20% or less of the strength at room temperature, the semiconductor device can be easily removed from the circuit board.
【００３３】さらに、摂氏１００度における樹脂の引っ
張りせん断強度が１５Ｎ／ｍｍ↑２以下であり、なおか
つ樹脂が洗浄剤で膨潤し接着強度が低下するので回路基
板に損傷を与えることなく樹脂を除去することができ
る。Furthermore, the resin has a tensile shear strength of 15 N / mm @ 2 or less at 100 degrees Celsius, and the resin swells with a cleaning agent to lower the adhesive strength, so that the resin is removed without damaging the circuit board. be able to.
【００３４】[0034]
【発明の効果】以上のように本発明によれば、接続信頼
性を向上させる目的で半導体素子と半導体キャリアとの
間もしくは半導体装置と回路基板との間に樹脂を封止し
た後でも、半導体キャリアや回路基板に損傷を与えるこ
となく半導体素子や半導体装置を取り外し交換修理する
ことができ、不良が生じた場合のロスが大きく減少す
る。As described above, according to the present invention, even after a resin is sealed between a semiconductor element and a semiconductor carrier or between a semiconductor device and a circuit board for the purpose of improving connection reliability, a semiconductor The semiconductor element and the semiconductor device can be removed and replaced and repaired without damaging the carrier and the circuit board, and the loss when a defect occurs is greatly reduced.
【図１】本発明の一実施例における半導体装置の実装構
造の要部断面図FIG. 1 is a sectional view of a main part of a mounting structure of a semiconductor device according to an embodiment of the present invention.
【図２】本発明の一実施例における半導体装置の取り外
し過程の概念の説明図FIG. 2 is an explanatory diagram of a concept of a process of removing a semiconductor device according to an embodiment of the present invention.
【図３】信頼性試験特性図FIG. 3 is a reliability test characteristic diagram.
１ 半導体装置 ２ 半導体素子 ３ バンプ ４ 導電性接着剤 ５ 電極（半導体キャリア側） ６ 封止樹脂（半導体素子〜半導体キャリア間） ７ 半導体キャリア ８ 電極（半導体装置側） ９ はんだ １０ 電極（回路基板側） １１ 封止樹脂（半導体装置〜回路基板間） １２ 回路基板 Reference Signs List 1 semiconductor device 2 semiconductor element 3 bump 4 conductive adhesive 5 electrode (semiconductor carrier side) 6 sealing resin (between semiconductor element and semiconductor carrier) 7 semiconductor carrier 8 electrode (semiconductor device side) 9 solder 10 electrode (circuit board side) 11) sealing resin (between semiconductor device and circuit board) 12 circuit board
───────────────────────────────────────────────────── フロントページの続き (72)発明者 目黒 赳 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 ──────────────────────────────────────────────────続 き Continuing on the front page (72) Inventor Takeshi Meguro 1006 Kazuma Kadoma, Kadoma City, Osaka Matsushita Electric Industrial Co., Ltd.
Claims (6)
は半導体装置と回路基板との間の内少なくとも一方を、
２００度以上における引っ張りせん断強度が室温におけ
る強度の２０％以下になる熱硬化性樹脂で封止したこと
を特徴とする半導体装置の実装構造。At least one of between a semiconductor element and a semiconductor carrier, or between a semiconductor device and a circuit board,
A semiconductor device mounting structure characterized by being sealed with a thermosetting resin having a tensile shear strength at 200 degrees or more of 20% or less of the strength at room temperature.
Ｎ／mm2以上である熱硬化性樹脂としたことを特徴とす
る請求項１記載の半導体装置の実装構造。2. A tensile shear strength at room temperature of 20.
2. The mounting structure of a semiconductor device according to claim 1, wherein the thermosetting resin is N / mm 2 or more.
１５Ｎ／mm2以下である熱硬化性樹脂としたことを特徴
とする請求項１記載の半導体装置の実装構造。3. The mounting structure of a semiconductor device according to claim 1, wherein the thermosetting resin has a tensile shear strength at 100 degrees of 15 N / mm 2 or less.
せると膨潤し接着強度が低下する熱硬化性樹脂としたこ
とを特徴とする請求項１記載の半導体装置の実装構造。4. The semiconductor device mounting structure according to claim 1, wherein said thermosetting resin is a thermosetting resin that swells and reduces adhesive strength when immersed in a glycol ether-based cleaning agent.
子、または回路基板に実装された半導体装置の内少なく
とも一方を、樹脂を封止した後に取り外しを行うリペア
方法であって、樹脂を所定温度の熱風で一定時間加熱す
る工程と、半導体素子または半導体装置を取り外す工程
と、半導体キャリアまたは回路基板に残った樹脂を所定
温度に保ちグリコールエーテル系の洗浄剤に浸漬させて
除去する工程とを備えたことを特徴とする半導体装置の
リペア方法。5. A repair method for removing at least one of a semiconductor element mounted on a semiconductor carrier or a semiconductor device mounted on a circuit board after sealing the resin, wherein the resin is heated with a hot air having a predetermined temperature. And a step of removing the semiconductor element or the semiconductor device, and a step of removing the resin remaining on the semiconductor carrier or the circuit board by immersing the resin in a glycol ether-based cleaning agent at a predetermined temperature. A method for repairing a semiconductor device.
度の範囲とし、回路基板の加熱温度を摂氏９０度〜摂氏
１１０度の範囲としたことを特徴とする請求項５記載の
半導体装置のリペア方法。6. The temperature of the hot air is set to 240 degrees Celsius to 260 degrees Celsius.
6. The repair method for a semiconductor device according to claim 5, wherein the heating temperature of the circuit board is in a range of 90 degrees Celsius to 110 degrees Celsius.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26038896A JPH10107095A (en) | 1996-10-01 | 1996-10-01 | Mounting structure and repairing method for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26038896A JPH10107095A (en) | 1996-10-01 | 1996-10-01 | Mounting structure and repairing method for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10107095A true JPH10107095A (en) | 1998-04-24 |
Family
ID=17347231
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26038896A Pending JPH10107095A (en) | 1996-10-01 | 1996-10-01 | Mounting structure and repairing method for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10107095A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0970520A4 (en) * | 1997-01-17 | 2000-08-30 | Loctite Corp | Mounting structure and mounting process from semiconductor devices |
| JP2000260912A (en) * | 1999-03-05 | 2000-09-22 | Fujitsu Ltd | Method and structure for mounting semiconductor device |
| US6274389B1 (en) | 1997-01-17 | 2001-08-14 | Loctite (R&D) Ltd. | Mounting structure and mounting process from semiconductor devices |
| US6316528B1 (en) | 1997-01-17 | 2001-11-13 | Loctite (R&D) Limited | Thermosetting resin compositions |
| US6590287B2 (en) | 2000-08-01 | 2003-07-08 | Nec Corporation | Packaging method and packaging structures of semiconductor devices |
| US6829818B2 (en) | 2000-09-12 | 2004-12-14 | Tdk Corporation | Manufacturing method of a head gimbal assembly |
| US6870248B1 (en) | 1999-06-07 | 2005-03-22 | Rohm Co., Ltd. | Semiconductor chip with external connecting terminal |
| US8217275B2 (en) | 2006-12-04 | 2012-07-10 | Panasonic Corporation | Sealing material and mounting method using the sealing material |
-
1996
- 1996-10-01 JP JP26038896A patent/JPH10107095A/en active Pending
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0970520A4 (en) * | 1997-01-17 | 2000-08-30 | Loctite Corp | Mounting structure and mounting process from semiconductor devices |
| US6274389B1 (en) | 1997-01-17 | 2001-08-14 | Loctite (R&D) Ltd. | Mounting structure and mounting process from semiconductor devices |
| US6316528B1 (en) | 1997-01-17 | 2001-11-13 | Loctite (R&D) Limited | Thermosetting resin compositions |
| JP2000260912A (en) * | 1999-03-05 | 2000-09-22 | Fujitsu Ltd | Method and structure for mounting semiconductor device |
| US6870248B1 (en) | 1999-06-07 | 2005-03-22 | Rohm Co., Ltd. | Semiconductor chip with external connecting terminal |
| US7138298B2 (en) | 1999-06-07 | 2006-11-21 | Rohm Co., Ltd. | Semiconductor chip with external connecting terminal |
| US7262490B2 (en) | 1999-06-07 | 2007-08-28 | Rohm Co., Ltd. | Semiconductor chip with external connecting terminal |
| US7339264B2 (en) | 1999-06-07 | 2008-03-04 | Rohm Co., Ltd. | Semiconductor chip with external connecting terminal |
| US6590287B2 (en) | 2000-08-01 | 2003-07-08 | Nec Corporation | Packaging method and packaging structures of semiconductor devices |
| US6829818B2 (en) | 2000-09-12 | 2004-12-14 | Tdk Corporation | Manufacturing method of a head gimbal assembly |
| US8217275B2 (en) | 2006-12-04 | 2012-07-10 | Panasonic Corporation | Sealing material and mounting method using the sealing material |
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