JPH06151477A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH06151477A
JPH06151477A JP31933292A JP31933292A JPH06151477A JP H06151477 A JPH06151477 A JP H06151477A JP 31933292 A JP31933292 A JP 31933292A JP 31933292 A JP31933292 A JP 31933292A JP H06151477 A JPH06151477 A JP H06151477A
Authority
JP
Japan
Prior art keywords
chip
substrate
semiconductor chip
conductive adhesive
chips
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP31933292A
Other languages
Japanese (ja)
Inventor
Shoji Takishima
昭二 滝島
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Faurecia Clarion Electronics Co Ltd
Original Assignee
Clarion Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clarion Co Ltd filed Critical Clarion Co Ltd
Priority to JP31933292A priority Critical patent/JPH06151477A/en
Publication of JPH06151477A publication Critical patent/JPH06151477A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors

Abstract

PURPOSE:To make a defective chip or nondefective chip easily removable from a substrate at the time of removing the defective chip or replacing the nondefective chip with another chip. CONSTITUTION:A conductive bonding agent 14 containing solder particles is used and, at the time of bonding a semiconductor chip 3 to a substrate 1, the substrate 1 is heated to a temperature lower than the melting point of the solder. At the time of removing a defective chip or replacing a nondefective chip with another chip, the substrate 1 is heated to a temperature higher than the melting point of the solder.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体チップが導電性
接着剤を介して基体上に接合されてなる半導体装置に関
する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which a semiconductor chip is bonded to a substrate via a conductive adhesive.

【0002】[0002]

【従来の技術】共通の基体上に少なくとも半導体チップ
が導電性接着剤によって接合された、図3に示すような
構造の半導体装置が知られている。同図において、1は
表面に複数の導体2が配置された基体、3は導電性接着
剤4によって導体2上に接合された半導体チップ、5は
同様に導電性接着剤4によって他の導体2上に接合され
た半導体チップ以外の他のチップ、6は半導体チップ3
あるいは他のチップ5と導体2との間に所望の回路を構
成するように接続されたボンディングワイヤである。
2. Description of the Related Art There is known a semiconductor device having a structure as shown in FIG. 3, in which at least a semiconductor chip is bonded on a common substrate with a conductive adhesive. In the figure, 1 is a substrate on which a plurality of conductors 2 are arranged, 3 is a semiconductor chip bonded on the conductor 2 by a conductive adhesive 4, and 5 is another conductor 2 by a conductive adhesive 4 in the same manner. Chips other than the semiconductor chips bonded on top, 6 is a semiconductor chip 3
Alternatively, it is a bonding wire connected between another chip 5 and the conductor 2 so as to form a desired circuit.

【0003】このように半導体チップ3あるいは他のチ
ップ5が共通の基体1上に実装された半導体装置におい
て、重要な課題の一つに不良チップの除去及び良品チッ
プの交換(リペアと称される)がある。このように一度
基体1上に実装された不良チップあるいは良品チップを
除去したり交換するためには、各チップを基体1上の導
体2上に接合している導電性接着剤4を分解させる必要
がある。このように導電性接着剤4を分解させるには、
基体1を高温(例えば300℃)に熱することにより、
半導体チップ3あるいは他のチップ5に機械的な力を加
えて取り外すことが行われている。または、特殊な薬品
を用いて導電性接着剤4を溶解させることが行われてい
る。
In the semiconductor device in which the semiconductor chip 3 or the other chip 5 is mounted on the common substrate 1 as described above, one of important problems is removal of defective chips and replacement of non-defective chips (referred to as repair). ). As described above, in order to remove or replace a defective chip or a non-defective chip once mounted on the base 1, it is necessary to disassemble the conductive adhesive 4 bonding each chip onto the conductor 2 on the base 1. There is. In order to decompose the conductive adhesive 4 in this way,
By heating the substrate 1 to a high temperature (for example, 300 ° C.),
The semiconductor chip 3 or another chip 5 is removed by applying a mechanical force. Alternatively, the conductive adhesive 4 is dissolved using a special chemical.

【0004】このように基体1上から不良チップの除去
及び良品チップの交換を行うことは、特に半導体チップ
3のように高価なチップあるいは基体1を有効に活用し
てコストダウンを図る上で必要なことである。
The removal of defective chips and the replacement of non-defective chips on the substrate 1 in this manner are necessary in order to effectively utilize expensive chips such as the semiconductor chip 3 or the substrate 1 to reduce costs. That's right.

【0005】[0005]

【発明が解決しようとする課題】ところで従来の半導体
装置では、不良チップの除去及び良品チップの交換を行
うために導電性接着剤を溶融して基体上から必要なチッ
プを取り外すのが、技術的に困難であるという問題があ
る。
In the conventional semiconductor device, it is technically necessary to melt the conductive adhesive and remove the required chip from the substrate in order to remove defective chips and replace good chips. The problem is that it is difficult.

【0006】例えば前記のように基体を高温に熱して導
電性接着剤を分解させる場合は他のチップなどに対して
損傷を与えるおそれがあり、また特殊な薬品を用いる場
合は他のチップに対してのみならず基体を化学的に侵し
てしまうおそれがある。このためさらに他の方法とし
て、フリップチップを用いる方法やハンダを用いて接合
する方法も知られているが、コストアップが避けられな
い。
For example, when the substrate is heated to a high temperature to decompose the conductive adhesive as described above, it may damage other chips, and when a special chemical is used, the other chips may be damaged. Not only that, but the substrate may be chemically attacked. Therefore, as still another method, a method using a flip chip or a method using a solder for joining is also known, but an increase in cost is inevitable.

【0007】本発明は以上のような問題に対処してなさ
れたもので、不良チップの除去及び良品チップの交換の
ために導電性接着剤を溶融して基板上から必要なチップ
を取り外す場合に、このチップの取り出しが容易に行え
る構造の半導体装置を提供することを目的とするもので
ある。
The present invention has been made to solve the above problems, and when the necessary chips are removed from the substrate by melting the conductive adhesive in order to remove defective chips and replace good chips. It is an object of the present invention to provide a semiconductor device having a structure in which this chip can be taken out easily.

【0008】[0008]

【課題を解決するための手段】上記目的を達成するため
に本発明は、基体上に配置された導体と、前記導体上に
ハンダ粒子を含む導電性接着剤によって接合された半導
体チップと、前記半導体チップと導体との間に所望の回
路を構成するように接続されたボンディングワイヤとか
らなることを特徴とするものである。
In order to achieve the above object, the present invention relates to a conductor arranged on a substrate, a semiconductor chip bonded on the conductor with a conductive adhesive containing solder particles, and It is characterized by comprising a bonding wire connected between a semiconductor chip and a conductor so as to form a desired circuit.

【0009】[0009]

【作用】半導体チップを基体上の導体上に接合する場合
は、基体をハンダ溶融温度以下に加熱して導電性接着剤
を溶融して硬化する。不良チップの除去及び良品チップ
の交換を行う場合は、基体をハンダ溶融温度以上に加熱
して導電性接着剤を溶融して、チップを取り外すように
する。
When the semiconductor chip is bonded onto the conductor on the base, the base is heated to a temperature below the solder melting temperature to melt and cure the conductive adhesive. When removing defective chips and exchanging non-defective chips, the substrate is heated to a solder melting temperature or higher to melt the conductive adhesive and the chips are removed.

【0010】[0010]

【実施例】以下図面を参照して本発明の実施例を説明す
る。図1は本発明の半導体装置の実施例を示す断面図
で、1は表面に複数の導体2が配置された導体、3はハ
ンダ粒子13を含む導電性接着剤14によって導体2上
に接合された半導体チップ、5は同様に導電性接着剤1
4によって他の導体2上に接合された半導体チップ以外
の他のチップ、6は半導体チップ3あるいは他のチップ
5と導体2との間に所望の回路を構成するように接続さ
れたボンディングワイヤである。
Embodiments of the present invention will be described below with reference to the drawings. FIG. 1 is a cross-sectional view showing an embodiment of a semiconductor device of the present invention, 1 is a conductor having a plurality of conductors 2 arranged on its surface, and 3 is bonded on the conductor 2 by a conductive adhesive 14 containing solder particles 13. Similarly, semiconductor chips 5 are conductive adhesives 1
Chips other than the semiconductor chip joined on the other conductor 2 by 4, 6 is a bonding wire connected between the semiconductor chip 3 or another chip 5 and the conductor 2 so as to form a desired circuit. is there.

【0011】ハンダ粒子13を含む導電性接着剤14の
硬化温度は、ハンダの溶融温度よりも低く設定されてい
るので、導電性接着剤14の硬化温度ではハンダ粒子1
3は溶融せずに粒子の状態を保ったままになっている。
一方、ハンダの溶融温度以上に加熱したときはハンダ粒
子13が溶融するので、導電性接着剤14の全体は押し
広げられるように分解する。
Since the curing temperature of the conductive adhesive 14 containing the solder particles 13 is set lower than the melting temperature of the solder, at the curing temperature of the conductive adhesive 14 the solder particles 1
The sample No. 3 did not melt and remained in the state of particles.
On the other hand, when the solder particles 13 are heated to the melting temperature or higher, the solder particles 13 are melted, so that the entire conductive adhesive 14 is decomposed so as to be spread.

【0012】まず、半導体チップ3を基体1上の導体2
上に接合する場合は、基体1をハンダ溶融温度以下に加
熱することにより導電性接着剤14を硬化させて半導体
チップ3を接合する。続いて、半導体チップ3と導体2
との間にボンディングワイヤ6をボンディングする。他
のチップ5に対しても同様な処理を行う。
First, the semiconductor chip 3 is attached to the conductor 2 on the substrate 1.
In the case of bonding to the upper side, the conductive adhesive 14 is hardened by heating the substrate 1 to the solder melting temperature or lower to bond the semiconductor chip 3. Then, the semiconductor chip 3 and the conductor 2
The bonding wire 6 is bonded between the and. Similar processing is performed on the other chips 5.

【0013】次に、基体1上に接合された各チップの検
査を行い、不良チップ及び良品チップの選別を行う。こ
れら不良チップの除去及び良品チップの交換を行うため
に、基体1をハンダ溶融温度以上に加熱する。これによ
ってハンダ粒子13が溶融するので、導電性接着剤14
も分解すると共に、図2に示すように全体が押し広げら
れるようになる。
Next, each chip bonded on the substrate 1 is inspected to select defective chips and non-defective chips. In order to remove these defective chips and replace good chips, the substrate 1 is heated to the solder melting temperature or higher. This melts the solder particles 13, so that the conductive adhesive 14
As shown in FIG. 2, the whole is expanded as it is disassembled.

【0014】この結果、導電性接着剤14の厚さが薄く
なるため半導体チップ3の接着力が低下するので、半導
体チップ3はピンセットなどを用いることにより、導体
2上から容易に取り外すことができる。
As a result, the adhesive strength of the semiconductor chip 3 is reduced because the thickness of the conductive adhesive 14 is reduced, so that the semiconductor chip 3 can be easily removed from the conductor 2 by using tweezers or the like. .

【0015】このように本実施例によれば、ハンダ粒子
13を含む導電性接着剤14を用い、半導体チップ3を
接合するときは基体1をハンダ溶融温度以下で加熱処理
し、半導体チップ3を取り外すときは基体1をハンダ溶
融温度以上で加熱処理するようにしたので、不良チップ
の除去及び良品チップの交換を行う場合はチップの取り
外しを容易に行うことができる。
As described above, according to this embodiment, when the semiconductor chip 3 is bonded using the conductive adhesive 14 containing the solder particles 13, the substrate 1 is heat-treated at a temperature not higher than the solder melting temperature, so that the semiconductor chip 3 is formed. Since the substrate 1 is heat-treated at a temperature equal to or higher than the solder melting temperature when it is removed, the chip can be easily removed when the defective chip is removed and the good chip is replaced.

【0016】すなわち、従来のように高温加熱処理を行
って半導体チップに機械的な力を加えて取り外す方法に
比べて、チップに損傷を与えることなく取り外すことが
でき、また特殊な薬品を用いないので基体などを化学的
に侵してしまうこともなくなる。これによって、高価な
半導体チップあるいは基体を有効に活用することができ
るので、コストダウンを図ることができる。
That is, as compared with the conventional method of removing a semiconductor chip by applying a mechanical force to the semiconductor chip by applying a high temperature heat treatment, the semiconductor chip can be removed without damaging the chip and no special chemical is used. Therefore, the substrate and the like are not chemically attacked. As a result, an expensive semiconductor chip or base can be effectively used, and the cost can be reduced.

【0017】[0017]

【発明の効果】以上述べたように本発明によれば、ハン
ダ粒子を含む導電性接着剤を用い半導体チップを接合す
るときは基体をハンダ溶融温度以下で加熱処理し、不良
チップの除去及び良品チップの交換を行うときは基体を
ハンダ溶融温度以上で加熱処理を行うようにしたので、
半導体チップの取り外しを容易に行うことができる。
As described above, according to the present invention, when a semiconductor chip is bonded using a conductive adhesive containing solder particles, the substrate is heat-treated at a solder melting temperature or lower to remove defective chips and obtain good products. When exchanging chips, the substrate was heated at a temperature above the solder melting temperature.
The semiconductor chip can be easily removed.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の半導体装置の実施例を示す断面図であ
る。
FIG. 1 is a cross-sectional view showing an embodiment of a semiconductor device of the present invention.

【図2】本実施例における半導体チップの取り外し方法
を説明する断面図である。
FIG. 2 is a cross-sectional view illustrating a method of removing a semiconductor chip according to this embodiment.

【図3】従来例を示す断面図である。FIG. 3 is a cross-sectional view showing a conventional example.

【符号の説明】[Explanation of symbols]

1 基体 2 導体 3 半導体チップ 13 ハンダ粒子 14 導電性接着剤 1 Base 2 Conductor 3 Semiconductor Chip 13 Solder Particles 14 Conductive Adhesive

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 基体上に配置された導体と、前記導体上
にハンダ粒子を含む導電性接着剤によって接合された半
導体チップと、前記半導体チップと導体との間に所望の
回路を構成するように接続されたボンディングワイヤと
からなることを特徴とする半導体装置。
1. A conductor arranged on a substrate, a semiconductor chip bonded on the conductor with a conductive adhesive containing solder particles, and a desired circuit is formed between the semiconductor chip and the conductor. A semiconductor device comprising a bonding wire connected to the.
JP31933292A 1992-11-04 1992-11-04 Semiconductor device Pending JPH06151477A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP31933292A JPH06151477A (en) 1992-11-04 1992-11-04 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP31933292A JPH06151477A (en) 1992-11-04 1992-11-04 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH06151477A true JPH06151477A (en) 1994-05-31

Family

ID=18109002

Family Applications (1)

Application Number Title Priority Date Filing Date
JP31933292A Pending JPH06151477A (en) 1992-11-04 1992-11-04 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH06151477A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002110721A (en) * 2000-10-02 2002-04-12 Hitachi Ltd Method for manufacturing semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002110721A (en) * 2000-10-02 2002-04-12 Hitachi Ltd Method for manufacturing semiconductor device

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