JPH04326536A - Repairing method for semiconductor device - Google Patents
Repairing method for semiconductor deviceInfo
- Publication number
- JPH04326536A JPH04326536A JP3095824A JP9582491A JPH04326536A JP H04326536 A JPH04326536 A JP H04326536A JP 3095824 A JP3095824 A JP 3095824A JP 9582491 A JP9582491 A JP 9582491A JP H04326536 A JPH04326536 A JP H04326536A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor chip
- wiring board
- semiconductor device
- wiring
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 72
- 238000000034 method Methods 0.000 title claims abstract description 43
- 239000004020 conductor Substances 0.000 claims abstract description 17
- 239000000956 alloy Substances 0.000 claims abstract description 13
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 13
- 238000010438 heat treatment Methods 0.000 claims abstract description 12
- 239000007789 gas Substances 0.000 claims abstract description 11
- 239000000112 cooling gas Substances 0.000 claims abstract description 9
- 230000035939 shock Effects 0.000 claims abstract description 5
- 230000002950 deficient Effects 0.000 claims description 19
- 238000005507 spraying Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 abstract description 8
- 239000011521 glass Substances 0.000 abstract description 6
- 239000007769 metal material Substances 0.000 abstract description 4
- 229910000510 noble metal Inorganic materials 0.000 abstract description 4
- 230000035882 stress Effects 0.000 abstract description 3
- 230000008646 thermal stress Effects 0.000 abstract description 3
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 5
- 238000007796 conventional method Methods 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/98—Methods for disconnecting semiconductor or solid-state bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/799—Apparatus for disconnecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Abstract
Description
【０００１】0001
【産業上の利用分野】本発明は半導体チップの電極と、
半導体チップと熱膨張係数の異なる配線基板の導体配線
に、印刷方式によって形成させた貴金属材料からなる突
起状電極を、合金接合によって接続している半導体装置
のリペア方法に関するものである。[Industrial Application Field] The present invention relates to an electrode of a semiconductor chip,
The present invention relates to a method for repairing a semiconductor device, in which a protruding electrode made of a noble metal material formed by a printing method is connected to a conductor wiring of a wiring board having a coefficient of thermal expansion different from that of a semiconductor chip by alloy bonding.
【０００２】0002
【従来の技術】以下に、半導体チップの電極に電気メッ
キにより突起状電極の形成を行い、配線基板の導体配線
と合金接続を行った従来の半導体装置のリペア方法を図
５〜図８の工程断面図に従って説明する。[Prior Art] The following describes a conventional method for repairing a semiconductor device, in which protruding electrodes are formed on the electrodes of a semiconductor chip by electroplating, and alloy connections are made with conductor wiring on a wiring board, as shown in FIGS. 5 to 8. This will be explained according to the cross-sectional diagram.
【０００３】まず、図５に示すガラス，セラミックスな
どよりなる配線基板１には、半導体チップ４が導体配線
２とＳｎ−Ｐｂ合金からなる突起状電極３とを介して接
続されており、不良半導体チップ５も同様に接続されて
いる。First, a semiconductor chip 4 is connected to a wiring board 1 made of glass, ceramics, etc., as shown in FIG. Chip 5 is also connected in the same way.
【０００４】リペア時には、上方にガラス管６が保持さ
れたステージ７の上にセットし、加熱ガス８が供給され
、突起状電極３が溶融した時に図６に示すように不良半
導体チップ５をピンセット１０にて取り除く。At the time of repair, the defective semiconductor chip 5 is placed on a stage 7 holding a glass tube 6 above, heated gas 8 is supplied, and when the protruding electrodes 3 are melted, the defective semiconductor chip 5 is removed with tweezers as shown in FIG. Remove at step 10.
【０００５】配線基板１と導体配線２の上に残った余分
な突起状電極３の残留分１１を除去後、図７に示すよう
に、新品の半導体チップ４をセットする。After removing the residual portion 11 of the extra protruding electrode 3 remaining on the wiring board 1 and the conductor wiring 2, a new semiconductor chip 4 is set as shown in FIG.
【０００６】そして、図８に示すように加熱を行い、合
金接合によって再び接続する。[0006] Then, as shown in FIG. 8, heating is performed and the connections are made again by alloy bonding.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら従来の方
法は、半導体チップの電極にフォトリソ工程後、電気メ
ッキによって突起状電極を形成する、突起状電極形成コ
ストの高い方法を用いた半導体装置のリペアに適用する
ものであり、以下に示す問題点を有していた。[Problems to be Solved by the Invention] However, in the conventional method, protruding electrodes are formed on the electrodes of semiconductor chips by electroplating after a photolithography process, which is an expensive method for forming protruding electrodes. However, it had the following problems.
【０００８】（１）突起状電極形成コストの低減化を実
現する方法として、配線基板の導体配線に印刷方式によ
って一括して突起状電極を形成させる方法があるがこの
方法を用いた半導体装置装置のリペアにおいては、突起
状電極を溶融させてリペアを行うために、突起状電極を
導体配線に部分的に再形成させる必要があり、技術的に
非常に困難であった。(1) As a method of reducing the cost of forming protruding electrodes, there is a method of forming protruding electrodes all at once on the conductor wiring of a wiring board by a printing method.Semiconductor devices using this method In order to repair the protruding electrode by melting it, it was necessary to partially re-form the protruding electrode on the conductor wiring, which was technically extremely difficult.
【０００９】（２）導体配線の材料によっては、加熱に
よって突起状電極の方へ拡散が進行し、配線が断線する
ために、加熱条件をシビアに管理する必要があった。(2) Depending on the material of the conductor wiring, heating may cause diffusion to progress toward the protruding electrodes and cause the wiring to break, so it was necessary to strictly control the heating conditions.
【００１０】本発明は前記の従来の問題点を解決するも
ので、半導体チップの電極と、半導体チップと熱膨張係
数の異なる配線基板の導体配線に、印刷方式によって形
成させた突起状電極とを向い合わせ、合金接合によって
接続する半導体装置のリペア方法を提供することを目的
とする。[0010] The present invention solves the above-mentioned conventional problems by using a printing method to form protruding electrodes on the electrodes of a semiconductor chip and the conductor wiring of a wiring board that has a different coefficient of thermal expansion from that of the semiconductor chip. The present invention aims to provide a method for repairing semiconductor devices that face each other and are connected by alloy bonding.
【００１１】[0011]
【課題を解決するための手段】この課題を解決するため
に、本発明のリペア方法は、配線基板の導体配線に、印
刷方式によって、貴金属材料からなる突起状電極を形成
する方法を用いた半導体装置を、ステージにセットし、
不良半導体チップと、不良半導体チップと熱膨張係数の
異なる配線基板の両方へ、加熱ガスと冷却ガスを交互に
吹き付け、熱衝撃を与えることによって両者を分離する
ことを技術的思想とするものである。[Means for Solving the Problem] In order to solve this problem, the repair method of the present invention uses a method of forming protruding electrodes made of a noble metal material on the conductor wiring of a wiring board by a printing method. Set the device on the stage,
The technical idea is to separate the defective semiconductor chip and the wiring board, which has a different coefficient of thermal expansion from the defective semiconductor chip, by alternately spraying heating gas and cooling gas to apply a thermal shock. .
【００１２】0012
【作用】合金接合されている不良半導体チップと配線基
板の両方へ、加熱ガスと冷却ガスを交互に吹き付けるこ
とにより、不良半導体チップの材料と配線基板の材料の
熱膨張係数の違いにより、熱応力が発生する。この応力
は、半導体装置の構造上、突起状電極の合金接合部へ集
中して加わり、合金接合強度を劣化させる。接合強度が
低くなったところで、不良半導体チップをピンセットで
取り除き、不良半導体チップと配線基板を分離させる。
分離した配線基板には、突起状電極を溶融させていない
ために、突起状電極が再接合の可能な状態で残り、その
箇所へ、新品の半導体チップをセットし、再接続する。[Action] By alternately spraying heating gas and cooling gas onto both the defective semiconductor chip and wiring board that are alloy-bonded, thermal stress is generated due to the difference in thermal expansion coefficient between the material of the defective semiconductor chip and the material of the wiring board. occurs. Due to the structure of the semiconductor device, this stress is concentrated and applied to the alloy joint of the protruding electrode, deteriorating the alloy joint strength. When the bonding strength becomes low, the defective semiconductor chip is removed with tweezers to separate the defective semiconductor chip and the wiring board. Since the protruding electrodes are not melted on the separated wiring board, the protruding electrodes remain in a state where they can be rejoined, and a new semiconductor chip is set in that position and reconnected.
【００１３】[0013]
【実施例】以下、本発明の一実施例について図面に基づ
いて説明する。図１〜図４は本発明の半導体装置のリペ
ア方法を順に示す工程断面図である。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. 1 to 4 are process cross-sectional views sequentially showing a method for repairing a semiconductor device according to the present invention.
【００１４】まず図２にリペアを行う半導体装置の構造
を示す。ガラス，セラミックスなどよりなる配線基板１
には、半導体チップ４が、導体配線２と、その上に印刷
方式により形成させた貴金属材料からなる突起状電極３
とを介して接合されており、不良半導体チップ５も同様
に接合されている。本実施例では、配線基板１には熱膨
張係数が５×１０−６／℃の材料を使用し、不良半導体
チップ５には熱膨張係数が３×１０−６／℃の材料を使
用している。First, FIG. 2 shows the structure of a semiconductor device to be repaired. Wiring board 1 made of glass, ceramics, etc.
, a semiconductor chip 4 has a conductor wiring 2 and a protruding electrode 3 made of a noble metal material formed thereon by a printing method.
The defective semiconductor chip 5 is also bonded in the same way. In this embodiment, a material with a thermal expansion coefficient of 5 x 10-6/°C is used for the wiring board 1, and a material with a thermal expansion coefficient of 3 x 10-6/°C is used for the defective semiconductor chip 5. There is.
【００１５】次に、図１に示すようにリペア時には、前
記半導体装置を、不良半導体チップ５の上方と配線基板
１の下方に、ガラス管６が保持されたステージ７にセッ
トし、不良半導体チップ５と配線基板１の両方へ、加熱
ガス８と冷却ガス９を交互に吹き付けることにより、熱
衝撃を与える。本実施例ではＮ２を用い、加熱ガス８の
温度を１２０℃±１０℃、冷却ガス９の温度を−２０℃
±１０℃に保持し、吹き付ける時間は加熱ガス８，冷却
ガス９ともに５分間としている。この工程より、配線基
板１の熱膨張係数と不良半導体チップ５の熱膨張係数の
違いにより、熱応力が発生する。この応力は、半導体装
置の構造上、突起状電極３の合金接合部へ集中して加わ
り、この工程を繰り返すことにより、合金接合強度を劣
化させることができる。Next, as shown in FIG. 1, at the time of repair, the semiconductor device is set on a stage 7 holding a glass tube 6 above the defective semiconductor chip 5 and below the wiring board 1. A thermal shock is applied by alternately spraying heating gas 8 and cooling gas 9 onto both the wiring board 5 and the wiring board 1. In this example, N2 is used, the temperature of the heating gas 8 is 120°C ± 10°C, and the temperature of the cooling gas 9 is -20°C.
The temperature was maintained at ±10° C., and the heating gas 8 and cooling gas 9 were both blown for 5 minutes. From this step, thermal stress is generated due to the difference in the thermal expansion coefficient of the wiring board 1 and the defective semiconductor chip 5. Due to the structure of the semiconductor device, this stress is concentratedly applied to the alloy bonding portion of the protruding electrode 3, and by repeating this process, the alloy bonding strength can be degraded.
【００１６】次に、図３に示すように、接合強度が小さ
くなったところで、不良半導体チップ５をピンセット１
０にて取り除き、不良半導体チップ５と配線基板１を分
離させる。分離した配線基板１には、突起状電極３を溶
融させていないために、突起状電極３が再接合の可能な
状態で残る。このために、新品の半導体チップ４を再接
続する前に、突起状電極３を再形成する必要がない。Next, as shown in FIG. 3, when the bonding strength has decreased, the defective semiconductor chip 5 is removed using tweezers 1.
0 to separate the defective semiconductor chip 5 and the wiring board 1. Since the protruding electrodes 3 are not melted on the separated wiring board 1, the protruding electrodes 3 remain in a state where they can be rejoined. For this reason, it is not necessary to re-form the protruding electrodes 3 before reconnecting the new semiconductor chip 4.
【００１７】次に、図４に示すように、その箇所へ、新
品の半導体チップ４をセットし、再接続する。以上でリ
ペアが完了となる。Next, as shown in FIG. 4, a new semiconductor chip 4 is set at that location and reconnected. The repair is now complete.
【００１８】[0018]
【発明の効果】以上のように本発明は、熱膨張係数が異
なる配線基板と半導体チップを、突起状電極を介して、
合金接合している半導体装置において、配線基板と不良
半導体チップの両方へ、加熱ガスと冷却ガスを交互に吹
き付ける熱衝撃によって、配線基板と不良半導体チップ
を分離させてリペアを行うために、以下に示す効果を有
する。[Effects of the Invention] As described above, the present invention connects a wiring board and a semiconductor chip with different coefficients of thermal expansion through protruding electrodes.
In order to repair a semiconductor device that is alloy-bonded by separating the wiring board and the defective semiconductor chip by applying thermal shock that alternately blows heating gas and cooling gas to both the wiring board and the defective semiconductor chip, the following procedure is performed. It has the effect shown.
【００１９】（１）合金接合を行う突起状電極を低コス
トで形成させる方法として、印刷方式で一括して配線基
板の導体配線に形成させる方法があるが、突起状電極を
溶融させてリペアを行う、従来の方法では、新品の半導
体チップを再接続する前に、突起状電極を配線基板の導
体配線に再形成させる必要があるため、実質的に、印刷
方式で突起状電極を形成させる方法を用いた半導体装置
のリペアは不可能であり、配線基板のロスがあった。し
かし、本発明によれば、突起状電極を溶融させていない
ため、分離した配線基板の導体配線には突起状電極が再
接合の可能な状態にて残り、その箇所へ、新品の半導体
チップを再接続することができる。(1) As a method of forming protruding electrodes for alloy bonding at low cost, there is a method of forming them all at once on the conductor wiring of a wiring board using a printing method, but it is also possible to melt the protruding electrodes and repair them. In the conventional method, it is necessary to re-form the protruding electrodes on the conductor wiring of the wiring board before reconnecting a new semiconductor chip, so this method essentially uses a printing method to form the protruding electrodes. It was impossible to repair semiconductor devices using this method, and there was a loss of wiring boards. However, according to the present invention, since the protruding electrodes are not melted, the protruding electrodes remain in the conductor wiring of the separated wiring board in a state where they can be rejoined, and a new semiconductor chip is inserted into that location. Can be reconnected.
【００２０】（２）本発明によれば、加熱ガスの温度が
１２０℃±１０℃であるため、導体配線の材料が突起状
電極の方へ拡散するのを防ぐことができ、断線不良がな
くなる。(2) According to the present invention, since the temperature of the heated gas is 120° C.±10° C., it is possible to prevent the conductor wiring material from diffusing toward the protruding electrodes, eliminating disconnection defects. .
【図１】本発明の一実施例における半導体装置のリペア
方法を順に示す工程断面図FIG. 1 is a step-by-step cross-sectional view showing a method for repairing a semiconductor device according to an embodiment of the present invention.
【図２】本発明の一実施例における半導体装置のリペア
方法を順に示す工程断面図FIG. 2 is a process cross-sectional view showing a repair method for a semiconductor device according to an embodiment of the present invention.
【図３】本発明の一実施例における半導体装置のリペア
方法を順に示す工程断面図FIG. 3 is a step-by-step cross-sectional view showing a method for repairing a semiconductor device according to an embodiment of the present invention.
【図４】本発明の一実施例における半導体装置のリペア
方法を順に示す工程断面図FIG. 4 is a step-by-step cross-sectional view showing a method for repairing a semiconductor device according to an embodiment of the present invention.
【図５】従来の半導体装置のリペア方法を順に示す工程
断面図[Figure 5] Process cross-sectional diagram showing a conventional semiconductor device repair method in order
【図６】従来の半導体装置のリペア方法を順に示す工程
断面図[Figure 6] Process cross-sectional diagram showing a conventional semiconductor device repair method in order
【図７】従来の半導体装置のリペア方法を順に示す工程
断面図[Figure 7] Process cross-sectional diagram showing a conventional semiconductor device repair method in order
【図８】従来の半導体装置のリペア方法を順に示す工程
断面図[Figure 8] Process cross-sectional diagram showing a conventional semiconductor device repair method in order
１ 配線基板 ２ 導体配線 ３ 突起状電極 ４ 半導体チップ ５ 不良半導体チップ ６ ガラス管 ７ ステージ ８ 加熱ガス ９ 冷却ガス １０ ピンセット １１ 突起状電極残留分 1 Wiring board 2 Conductor wiring 3 Protruding electrode 4 Semiconductor chip 5 Defective semiconductor chip 6 Glass tube 7 Stage 8 Heating gas 9 Cooling gas 10 Tweezers 11 Protruding electrode residue
Claims (2)
膨張係数の異なる配線基板の導体配線を、突起状電極を
介して合金接合によって接続されている半導体装置にお
いて、不良の半導体チップと配線基板の両方へ、加熱ガ
スと冷却ガスを交互に吹き付けることにより、熱衝撃を
与え、不良の半導体チップと配線基板を分離させ、分離
した配線基板の突起状電極と新品の半導体チップの電極
とを向い合わせ、合金接合によって再接続し、半導体装
置として用いることを特徴とする半導体装置のリペア方
法。Claim 1: In a semiconductor device in which an electrode of a semiconductor chip and a conductor wiring of a wiring board having a coefficient of thermal expansion different from that of the semiconductor chip are connected by alloy bonding via a protruding electrode, a defective semiconductor chip and a wiring board are connected. By spraying heating gas and cooling gas alternately on both sides, a thermal shock is applied to separate the defective semiconductor chip and the wiring board, and the protruding electrodes of the separated wiring board are aligned with the electrodes of the new semiconductor chip. 1. A method for repairing a semiconductor device, which is characterized in that the semiconductor device is used as a semiconductor device by being assembled and reconnected by alloy bonding.
の導体配線上に印刷方式によって形成されていることを
特徴とする半導体装置のリペア方法。2. The method of repairing a semiconductor device according to claim 1, wherein the protruding electrode is formed on the conductor wiring of the wiring board by a printing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3095824A JPH04326536A (en) | 1991-04-25 | 1991-04-25 | Repairing method for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3095824A JPH04326536A (en) | 1991-04-25 | 1991-04-25 | Repairing method for semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04326536A true JPH04326536A (en) | 1992-11-16 |
Family
ID=14148158
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3095824A Pending JPH04326536A (en) | 1991-04-25 | 1991-04-25 | Repairing method for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04326536A (en) |
-
1991
- 1991-04-25 JP JP3095824A patent/JPH04326536A/en active Pending
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