JPH10100142A - Method and apparatus for adjusting crystal axis orientation of ingot by utilizing x-ray - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for adjusting a crystal axis orientation of an ingot by utilizing X-ray on the same machine as an X-ray crystal axis orientation measuring apparatus and an apparatus therefor. SOLUTION: A slide table 70 is provided on the same machine as an X-ray crystal axis orientation measuring apparatus 160 and an orientation adjusting mechanism 60 to which an ingot 54 is attached is fixed to the slide table 70. The slide table 70 is moved to a detection position and the crystal axes in the vertical and horizontal directions of the ingot 54 are measured by an X-ray irradiation part 170 and an X-ray light detection part 172. In such a state that the ingot 54 is kept parallel to a wire row by the orientation adjusting mechanism 60, the crystal axis of the ingot 54 is matched with the crystal axis measured by the X-ray crystal orientation measuring apparatus 160.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method and an apparatus for adjusting the crystal axis orientation of an ingot using X-rays, and more particularly to an X-ray capable of adjusting the crystal axis orientation of an ingot on the same machine as an X-ray crystal axis orientation measuring apparatus. The present invention relates to a method and an apparatus for adjusting the orientation of a crystal axis of an ingot using the method.

[0002]

2. Description of the Related Art The crystal axis of a silicon ingot is measured by
The measurement is performed using an X-ray crystal axis direction measuring device. That is, X
Place the ingot on the line crystal axis azimuth axis measuring device,
X-rays are emitted to the end face of the ingot, and reflected X-rays from the end face of the ingot are detected to measure the vertical and horizontal crystal axis directions of the ingot. After the measurement, the ingot is attached to a tilting mechanism provided on the work fixing portion of the wire saw, and the tilting mechanism tilts the horizontal direction and the vertical direction by a predetermined angle to align the crystal orientation.

[0003]

However, when the ingot is cut by inclining the ingot in the vertical and horizontal directions with respect to the wire row, as shown in FIG. 8, the ingot 1 has one end (the left end in FIG. 8). ) Is cut first by the wire row 2, causing a biased heat distribution in the grooved roller 3 constituting the wire row 2, and has a disadvantage in that the cutting precision is reduced. Reference numeral 4 is a slice base, and reference numeral 5 is a work block.

The present invention has been made in view of such circumstances, and it is possible to adjust the crystal axis direction without causing heat distribution in the grooved roller on the same machine as the X-ray crystal axis direction measuring apparatus. It is an object of the present invention to provide a method and an apparatus for adjusting the crystal axis orientation of an ingot using the method.

[0005]

SUMMARY OF THE INVENTION In order to achieve the above object, the present invention provides a crystal axis azimuth adjustment device which can rotate an ingot about its axis and rotate about an axis perpendicular to the axis. Attach the ingot to the means, place the ingot with the crystal axis direction adjusting means on the moving table of the X-ray crystal axis direction measuring device, and move the ingot on the moving table to the detection position of the X-ray crystal axis direction measuring device. The vertical and horizontal crystal axis directions of the ingot are detected, and the crystal axis direction adjusting means is driven and adjusted to the detected vertical and horizontal crystal axis directions of the ingot. Glue the slice base to the adjusted ingot,
A work block fixed to the ingot fixing portion of the ingot cutting device is attached to the slice base.

According to the present invention, first, the ingot is attached to the crystal axis direction adjusting means, and the ingot is moved together with the crystal axis direction adjusting means to the detection position of the X-ray crystal axis direction measuring device on the moving table. Then, the X-ray crystal axis direction measuring device detects the crystal axis directions in the vertical direction and the horizontal direction of the ingot, and displays the detected crystal axis directions on the display unit. Then, the crystal axis direction adjusting means is driven to make the crystal axis direction of the ingot coincide with each crystal axis direction displayed on the display unit. Then, after bonding the slice base to the ingot, a work block fixed to the ingot fixing portion of the ingot cutting device is attached to the slice base.

The crystal axis orientation adjusting means rotates the ingot in a direction parallel to the wire row by a predetermined angle in the circumferential direction about the axis and rotates the ingot by a predetermined angle about an axis perpendicular to the axis. By doing so, the crystal orientation is determined. The ingot is then positioned and fixed to the fixing part and cut by a wire row. Thus, the ingot is cut in a state parallel to the wire row, so that the grooved rollers forming the wire row do not have a biased heat distribution. Therefore, in the present invention, a highly accurate wafer can be obtained.

Further, according to the present invention, the crystal axis orientation of the ingot can be adjusted on the same machine as the X-ray crystal axis orientation measuring apparatus, so that the crystal axis orientation of the ingot can be adjusted outside the wire saw. It is easy to adjust the axial orientation. In addition, since the result after the adjustment can be confirmed on the same machine, the accuracy of the axial azimuth alignment can be remarkably improved.

[0009]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Preferred embodiments of a method and an apparatus for adjusting the crystal axis orientation of an ingot using X-rays according to the present invention will be described below in detail with reference to the accompanying drawings. FIG.
1 is an overall configuration diagram of a wire saw 10 for cutting an ingot. Wire 14 wound on one wire reel 12
Is a wire guide device 16, a plurality of fixed guide rollers 1
8, 18 and three dancer rollers 20 are sequentially wound around three grooved rollers 22, 22, 22 to form a wire row 2
After forming 4, a plurality of fixed guide rollers 18, 18,
It is wound around the other wire reel 26 via the dancer roller 20 and the wire guide device 16.

The dancer roller 20 has a weight 4 having a predetermined weight.
4 is suspended, and a required tension is always applied to the traveling wire 14. A wire cleaning device 46 is provided in the middle of the wire running path, and the working fluid 40 attached to the wire 14 is removed by the wire cleaning device 46. One of the wire reels 12 and 26 and one of the three grooved rollers 22 are provided with a drive motor 28 capable of rotating forward and reverse, respectively.
The drive motors 28, 30, 3 are connected to each other.
2, the wire 14 is driven by the pair of wire reels 1
It reciprocates between 2 and 26.

[0011] The wire row 24 has an abrasive fluid storage tank 3
8 (usually GC $ 600 to $ 1000
Is used from the polishing liquid supply nozzle 42. Below the wire row 24, an ingot 54 as a workpiece is
6 and work feed table 4 via slice base 58
8 supported. The work feed table 48 is a motor 50
The ingot 54 is movably provided in a vertical direction by a ball screw 52 that rotates in a direction, and the ingot 54 is pressed against the high-speed traveling wire row 24 by moving the work feed table 48 upward, thereby forming a large number of thin wafers. Is cut off.

[0012] The ingot 54 has a wire array 2 such that the cut surface of the cut wafer has a predetermined crystal plane.
It is necessary to adjust the position with respect to 4 and perform cutting. FIG.
FIG. 1 is a structural diagram of an ingot crystal axis orientation adjusting apparatus using X-rays according to the present embodiment. Details of the crystal axis direction adjusting device 150 will be described later. By the way, conventionally, in order to align the crystal orientation of the ingot 54 with respect to the wire row 24, first, the vertical and horizontal reference of the ingot 54 is positioned and fixed on the work feed table 48 in accordance with the vertical and horizontal reference of the wire row 24, With the tilting mechanism provided on the feed table 48,
The crystal orientation is adjusted by inclining the ingot 54 by a predetermined angle in the vertical and horizontal directions. In this case, as shown in FIG.
The X axis or Y axis of the ingot 54 and the wire row 24A or the wire row 24B are orthogonal. Then, as shown in FIG. 8, one end of the ingot 1 is cut first.

On the other hand, in the method of cutting an ingot according to the present invention, the ingot is cut in a state where the XY axes of the ingot 54 are parallel to the wire row 24C. After the ingot 54 is positioned and fixed to the slice base 58 and the work block 56 so that the cut surface of the cut wafer has a predetermined crystal plane, the work block 56 is fixed to the work feed table 48. Here, ingot 54
Is fixed to the slice base 58 and the work block 56 as follows.

In order for the ingot 54 to be cut parallel to the wire row 24, the ingot 54 must be maintained parallel to the wire row 24. In this state, in order for the cut surface of the wafer to be cut so as to have a predetermined crystal plane, the ingot 54 is rotated at a predetermined angle in the circumferential direction around the axis a,
The crystal orientation may be adjusted by rotating the ingot 54 at a predetermined angle in parallel with the wire row 24 about an axis perpendicular to the axis of the ingot 54.

Here, assuming that the vertical and horizontal references of the ingot 54 are parallel to the vertical and horizontal references of the wire row 24, the ingot 54 is cut in a state parallel to the wire row 24. And the ingot 54 so that the cut surface of the cut wafer has a predetermined crystal plane.
Is the angle in the tilt direction that rotates the ingot 54 in the circumferential direction about the axis, and λ is the maximum tilt angle that rotates the ingot 54 about an axis perpendicular to the axis of the ingot 54. On the other hand, in the conventional crystal orientation alignment method, when the inclination angles of the vertical direction and the horizontal direction with respect to the vertical and horizontal directions of the ingot 54 are α and β, respectively, θ and α,
The following relationship holds with β.

Θ = tan ⁻¹ (tan β / tan α) Further, the following relationship holds between λ and α, θ. λ = tan ^-1 (tan α / cos θ) Therefore, in order for the ingot 54 to be cut in a state parallel to the wire row 24 and to be cut so that the cut surface of the wafer has a predetermined crystal plane, the ingot must be 5
4 is assumed to be in a state parallel to the vertical and horizontal references of the wire row 24, and the ingot 54
Is rotated by θ in the circumferential direction about the axis, and λ is rotated in parallel with the wire row 24 by λ parallel to the axis orthogonal to the axis of the ingot 54 and perpendicular to the plane formed by the wire row 24. What is necessary is just to position and fix it to the base 58 and the work block 56, and fix the ingot 54 that has been positioned and fixed to the work feed table 48.

FIGS. 4A and 4B show the ingot 5
Ingot 54 rotated from the assumption that the vertical and horizontal references of No. 4 are in parallel with the vertical and horizontal references of the wire row 24, by θ rotation about the axis and by λ rotation parallel to the wire row 24. Is fixed to the slice base 58 and the work block 56 and further fixed to a work feed table (not shown). In this case, the slice base 58 is adhered in parallel with the axis of the ingot 54, but the work block 56 is attached to the slice base 58 at an angle of λ degrees with respect to the axis of the ingot 54.

By cutting the ingot 54 in this state, the ingot 54 is cut in a state parallel to the wire row 24, and the cut surface of the cut wafer becomes a predetermined crystal plane. Therefore, compared to the conventional method in which the ingot 54 is also inclined and cut in the vertical direction with respect to the wire row 24, the heat distribution in which the grooved rollers 22, 22, 22 forming the wire row 24 are biased is generated. Since there is no cutting, highly accurate cutting can be performed. After positioning and fixing in advance, the work feed table 4
Since the ingot 54 is fixed to the work 8, the work feed table 48 does not need to be provided with a tilting mechanism as in the related art, so that the wire saw main body 10 can be simplified.

FIGS. 5 (a) and 5 (b) show an ingot 54 which is simply rotated by θ about the axis of the slice base 5.
8 and a work block 56, which is fixed to a work feed table (not shown), and a rotation λ in a direction parallel to the wire row 24 is rotated by a tilting mechanism provided in the work feed table and swinging in a horizontal direction. The rotated state is shown.

By cutting the ingot 54 in this state, the ingot 54 can be moved in the same manner as described above.
The wafer is cut in a state parallel to 4, and the cut surface of the cut wafer becomes a predetermined crystal plane. Next, the crystal axis orientation adjusting device 150 of the present embodiment shown in FIG. 2 will be described. The crystal axis orientation adjusting device 150 shown in FIG.
An azimuth adjusting mechanism 60 and an X-ray crystal axis azimuth measuring device 160 are provided.

On the same machine as the X-ray crystal axis direction measuring device 160, a slide table 70 is movable in the left-right direction in the figure via guides 162, 162 and rails 164. The slide table 70 is driven in the left-right direction by rotating a screw shaft 168 connected to a motor 166. The azimuth adjustment mechanism 60 is mounted on the slide table 70 configured as described above. The ingot 54 is attached to the azimuth adjustment mechanism 60.

The X-ray crystal axis direction measuring device 160
It has a radiation unit 170 and an X-ray receiving unit 172. X
The X-ray irradiating section 170 is supported at one end of the arm 174, and the X-ray receiving section 172 is supported at the other end of the arm 174 at a predetermined angle. The arm 174 is swingably supported by a fan-shaped plate 176 via an arc-shaped rail 178. The rotating shaft 180 is fixed to the plate 176, and the rotating shaft 180 is connected to the motor 1 via a bearing 182.
84 to a spindle 186. Motor 18
4 is controlled by a control unit (not shown) to rotate the arm 176 every 90 °. The X-ray irradiating section 170 and the X-ray receiving section 172 swing on a guide and rail 178 (not shown) by a screw feed mechanism using a motor.

Next, the azimuth adjustment mechanism 60 will be described. FIG. 6 is a front view of the azimuth adjustment mechanism 60, and FIG. 7 is a side view thereof. As shown in FIGS. 6 and 7, the azimuth adjustment mechanism 60 mainly includes a work receiving portion 62 and a guide portion 6.
4. It comprises a lifting unit 66 and a positioning unit 68.
The work receiving portion 62 includes a rotary plate 71 provided on a slide table 70, and work receiving rollers 74, 74,... Disposed on the rotary plate 71 via a bracket 72, 72,. It is composed of The slide table 70 is formed in a rectangular shape, and has a horizontal reference and a vertical reference. The turntable 71 rotates on the slide table 70, and receives work receiving rollers 74, 74,.
Is rotated in parallel via the slide table 70. Further, the rotation angle at that time is set by reading a rotation scale (not shown) formed on the slide table 70 with a needle 73 provided on the turntable 71. The work receiving rollers 74, 74,.
Arranged along the base plate 68, the ingot 54 is placed on the work receiving rollers 74, 74,. The work receiving rollers 74, 74,...
The ingot 54 placed on the slide table 70
Placed in parallel to

The guide section 64 includes a slide table 7
0, and guide rails 78, 7 formed on both sides of the support plate 76.
And 8. The elevating unit 66 includes an elevating block 80 that slides on guide rails 78 formed on the support plate 76 and the support plate 7.
6 and a lifting mechanism 84 that moves the lifting block 80 up and down. The elevating block 80 is formed in an L-shaped cross section having a horizontal portion 80A and a vertical portion 80B, and support arms 82 for supporting the work block 56 are provided on both sides. The lifting block 80 is provided with a horizontal reference, and the support arm 82 is provided with a vertical reference.
Are brought into contact with the reference pieces 86, 86, and the lower surface thereof is brought into contact with the reference of the support arm 82, thereby being positioned and supported. Also, on the back of the lifting block 80,
A nut 88 is formed, and the nut 88 is screwed into a ball screw 90 provided along the support plate 76. The ball screw 90 is rotated by rotating an elevating handle 92 connected to the upper end, and the elevating block 80 is moved by the amount of the rotation to guide rails 78 and 7.
Move up and down along 8.

The positioning portion 68 is configured such that a reference plate 96 is fixed to a support table 94, and a rotary scale plate 98 is rotatably supported coaxially with the reference plate 96.
The support table 94 is mounted on the work receiving rollers 74, 74, and is installed such that the reference plate 96 and the ingot 54 are coaxially positioned. The reference plate 96 is formed in a disk shape, and a reference scale 1 for reading a rotary scale 102 formed on a rotary scale plate 98 described later on a peripheral portion thereof.
04 is formed. The rotary graduation plate 98 is formed in a disk shape, and a marking alignment graduation 100 V for aligning a marking line (showing a crystal orientation alignment reference of the ingot 54) drawn on an end surface of the ingot 54 described later at four positions on its peripheral portion. , 100H are formed at predetermined intervals. In addition, the rotary scale 98 is provided with a rotary scale 102 for setting the rotation angle of the ingot 54. The rotation scale 102 has a center position as a reference point, and the angle is scaled on both sides thereof. The rotation scale 98 rotates the rotation scale 102 while reading the rotation scale 102 with the reference scale 104 to set the rotation angle. Do. The marking scales 100V and 100H have a marking scale 100V serving as a vertical reference on an extension of the reference point of the rotary scale 102, and have a horizontal reference scale perpendicular to the marking scale 100V serving as the vertical reference. The marking scale 100H is formed. That is, when the reference scale 104 of the reference board 96 points to the reference point of the rotary scale 102, the marking scale 10 serving as a vertical reference is used.
0V is vertical to the slide table 70, and the marking scale 100H as a horizontal reference is parallel to the base plate. Therefore,
In this state, the horizontal marking line 104H and the vertical marking line 104V drawn on the end surface of the ingot 54 are aligned with the horizontal reference 100H and the vertical reference 100V of the marking scale, respectively. Coincides with 70 vertical and horizontal.

Next, the operation of the thus-configured crystal axis orientation adjusting device 150 will be described. First, the X-ray crystal axis direction measuring device 160 measures the crystal axis direction of the ingot 54. In this case, first, the azimuth adjustment mechanism 60 with the ingot 54 mounted on the slide table 70 is used.
Is fixed. Next, the slide table 70 is moved rightward in FIG. 2, and the ingot 54 is positioned at a detection position indicated by a two-dot chain line in the figure. Next, X-rays are emitted from the X-ray irradiating section 170 toward the end face of the ingot 54, and the reflected X-rays are received by the X-ray receiving section 172, and the crystal axis in the vertical direction of the ingot 54 is determined based on the reflection angle. Measure the bearing. Then, the horizontal crystal axis direction of the ingot 54 is measured. This completes the measurement of the crystal axis orientation. The measured crystal axis orientation in the vertical direction and the crystal axis orientation in the horizontal direction are displayed on the monitor 188.

On the basis of the two measured crystal axis orientations, a control unit (not shown) of the crystal axis orientation adjusting device 150 rotates the ingot 54 in the circumferential direction about the axis and tilts the angle θ. And a maximum tilt angle for rotating the ingot 54 about an axis orthogonal to the axis of the ingot 54. Next, the slide table 70 is returned to the original position, and the orientation of the ingot 54 is adjusted by the azimuth adjustment mechanism 60 so that the orientation of the crystal axis is the measured crystal axis azimuth.

First, a marking line 104 serving as a horizontal and vertical reference of the ingot 54 is provided on one end surface of the ingot 54.
H, 104V is applied in advance. At this time, the marking line 104V
Draws a straight line passing through the center of the orientation flat surface formed on the ingot 54 and the axis of the ingot 54, and the marking line 104H draws a straight line orthogonal to the marking line 104V and passing through the axis of the ingot 54. .

Next, the work block 56 is supported by the support arms 82 of the lifting block 80. On the other hand, the ingot 54 is placed on the work receiving rollers 74, 74,... And the rotary scale 104 is set at the reference position. Then, rotate the ingot 54 in the circumferential direction,
The marking lines 104H and 104V drawn on the end face are aligned so as to match the marking alignment scales 100H and 100V. In this state, the vertical and horizontal references of the ingot 54 match the vertical and horizontal references of the slide table 70. This can be considered that the horizontal and vertical references of the ingot 54 match the horizontal and vertical references of the wire row 24.

Next, of the crystal axis orientations detected by the X-ray crystal axis orientation measuring device 160, the rotary dial 98 is rotated by the rotation angle θ in the tilt direction about the axis of the ingot 54.
To rotate. Then, the marking line 104 is positioned at the marking alignment scales 100H and 100V changed by the rotation.
The ingot 54 is rotated in the circumferential direction so that H and 104V match. As a result, the ingot 54 has been rotated in the circumferential direction by θ from the state where the vertical reference is matched.

Next, of the crystal axis orientations detected by the X-ray crystal axis orientation measuring device 160, the turntable 71 is rotated by the rotation angle λ which is the maximum inclination angle of the orientation parallel to the wire row 24 of the ingot 54. Rotate. As a result, the ingot 54 has been rotated by λ from the state where the horizontal reference is matched, and has been inclined λ in parallel with the wire row 24.

By the above operation, the ingot 54 is cut in a state parallel to the traveling wire row 24, and the ingot 54 is positioned so that the cut surface of the cut wafer has a predetermined crystal plane. By lowering the block 56 and bonding the slice base 58 therebetween, the attachment of the ingot 54 to the slice base 58 and the work block 56 is completed.

As described above, by using the orientation adjusting mechanism 60, the crystal axis of the ingot 54 can be adjusted and the ingot 54 can be easily attached to the slice base 58 and the work block 58. The azimuth adjustment mechanism 60 can be applied to a case where the ingot 54 is rotated around the axis in the θ circumferential direction and fixed to the slice base 58 and the work block 56. In this case, since the rotation in the horizontal azimuth is unnecessary, the turntable 71 may be omitted.

Further, such an operation for adjusting the crystal axis orientation of the ingot 54 may be performed by returning the ingot 54 to the original position shown by the solid line in FIG. The crystal axis orientation may be adjusted at the position. When the adjustment is performed at the detection position, the adjustment error is smaller than when the adjustment is performed at the original position. Further, in the present embodiment, cutting of one ingot 54 has been described.
When cutting a plurality of shorter ingots, these ingots can be attached to a wire saw and cut at the same time. That is, the crystal axis orientation of each of the ingots is detected by the device 150, and the orientation adjustment mechanism 60
After adjusting the crystal axis orientation of the ingot, the ingot is sequentially attached to the wire saw side. Thereby, simultaneous cutting of a plurality of ingots becomes possible.

Further, in the present embodiment, the content of manually adjusting the crystal axis orientation of the ingot has been described. However, the present invention is not limited to this, and it is also possible to automate it. That is, the horizontal and vertical movements of the azimuth adjustment mechanism 60 are performed by a motor controlled by the control device, and information indicating the crystal axis orientation detected by the X-ray crystal axis orientation measurement device 160 is transmitted to the control device. When output, the control device drives and controls the motor so as to match the detected crystal axis direction. This makes it possible to automate the crystal axis orientation adjustment.

[0036]

As described above, according to the method and apparatus for adjusting the crystal axis orientation of an ingot using X-rays according to the present invention, the crystal axis orientation adjustment means so that the ingot is parallel to the wire row. In addition, since the crystal axis direction can be adjusted by the X-ray crystal axis direction measurement device, the crystal axis direction adjustment that does not cause heat distribution in the grooved roller can be performed on the same machine as the X-ray crystal axis direction measurement device. . Therefore, in the present invention, the trouble of adjusting the crystal axis direction on the actual wire saw can be omitted, and a highly accurate wafer can be obtained.

[Brief description of the drawings]

FIG. 1 is an overall configuration diagram of a wire saw.

FIG. 2 is an overall view of an X-ray crystal axis direction measuring apparatus according to an embodiment of the present invention.

FIG. 3 is an explanatory view of a state in which an ingot is inclined with respect to a wire row.

FIG. 4 is an explanatory view showing a first embodiment of a method for cutting an ingot.

FIG. 5 is an explanatory view showing a second embodiment of a method for cutting an ingot.

FIG. 6 is a front view of the crystal axis direction adjusting device.

FIG. 7 is a side view of a crystal axis direction adjusting device.

FIG. 8 is an explanatory view of a conventional ingot cutting method.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 ... Wire saw 14 ... Wire 22 ... Grooved roller 24 ... Wire row 54 ... Ingot 56 ... Work block 58 ... Slice base 60 ... Orientation adjustment mechanism 150 ... Crystal axis orientation adjustment device 160 ... X-ray crystal axis orientation measurement device

Claims (2)

[Claims] 1. An ingot is attached to a crystal axis direction adjusting means which is capable of rotating the ingot about its axis and rotatable about an axis perpendicular to the axis. Placed on the moving table of the X-ray crystal axis direction measuring device, the ingot on the moving table is moved to the detection position of the X-ray crystal axis direction measuring device to detect the vertical and horizontal crystal axis directions of the ingot, Drive the crystal axis direction adjusting means to adjust the crystal axis direction of the detected ingot in the vertical and horizontal directions.Adhere the slice base to the ingot where the crystal axis direction adjustment is completed. A method of adjusting the crystal axis orientation of an ingot using X-rays, wherein a work block fixed to an ingot fixing portion is attached to the slice base. 2. A crystal axis direction adjusting means to which an ingot is attached, said ingot is rotatable about its axis, and is rotatable about an axis perpendicular to the axis, and said crystal axis direction adjusting means. A moving table on which the attached ingot is mounted and moves on the apparatus main body to move to the crystal axis orientation measurement position of the ingot, an X-ray emitting portion for emitting X-rays to the ingot end face, and reflected X-rays from the ingot end face are incident. An X-ray crystal axis azimuth measuring device provided on the apparatus main body, comprising: an X-ray incidence unit; and a display unit for displaying the vertical and horizontal crystal axis azimuths of the ingot detected by the X-ray crystal axis azimuth measuring device. A slice base bonding means for bonding a slice base to the ingot; and a work block fixed to an ingot fixing portion of an ingot cutting device, A work block attachment means for attaching the scan, the crystal axis orientation adjustment device of the ingot using X-ray made of.