JPH0997822A - Method of evaluating bonding wire - Google Patents
Method of evaluating bonding wireInfo
- Publication number
- JPH0997822A JPH0997822A JP7274811A JP27481195A JPH0997822A JP H0997822 A JPH0997822 A JP H0997822A JP 7274811 A JP7274811 A JP 7274811A JP 27481195 A JP27481195 A JP 27481195A JP H0997822 A JPH0997822 A JP H0997822A
- Authority
- JP
- Japan
- Prior art keywords
- bonding
- wire
- strength
- reverse
- bonding wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/78—Apparatus for connecting with wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
- H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85148—Aligning involving movement of a part of the bonding apparatus
- H01L2224/85169—Aligning involving movement of a part of the bonding apparatus being the upper part of the bonding apparatus, i.e. bonding head, e.g. capillary or wedge
- H01L2224/8518—Translational movements
- H01L2224/85181—Translational movements connecting first on the semiconductor or solid-state body, i.e. on-chip, regular stitch
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
Abstract
Description
【０００１】[0001]
【発明が属する技術分野】本発明は、例えばＩＣやトラ
ンジスタのなどのワイヤボンディング工程を含む各種電
子機器の製造工程、またはボンディングワイヤを開発製
造する場合などにおいて、ワイヤボンディング、特にボ
ールボンディングを行ったときのボンディングワイヤの
強度を判定して評価する評価方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention performs wire bonding, particularly ball bonding, in the manufacturing process of various electronic devices including the wire bonding process of ICs and transistors, or in the case of developing and manufacturing bonding wires. The present invention relates to an evaluation method for determining and evaluating the strength of a bonding wire at that time.
【０００２】[0002]
【従来の技術】従来、例えばリードフレーム上に搭載し
たＩＣチップの端子部とリードフレームのインナーリー
ド部とをワイヤボンディングする場合には、一般に以下
の要領でボンディング作業が行われる。すなわち、図２
に示すように先ずリードフレーム１のパット部１ａに配
置されたＩＣチップ２の端子部２ａに、図に省略したボ
ンディング装置のキャピラリ３から順次繰り出されるボ
ンディングワイヤ４の一端４ａをボールボンディング
（第１ボンディング）する。2. Description of the Related Art Conventionally, for example, when wire bonding a terminal portion of an IC chip mounted on a lead frame to an inner lead portion of the lead frame, a bonding operation is generally performed in the following manner. That is, FIG.
As shown in FIG. 1, first, one end 4a of a bonding wire 4 sequentially fed out from a capillary 3 of a bonding apparatus (not shown) is ball-bonded (first to a terminal portion 2a of an IC chip 2 arranged on a pad portion 1a of a lead frame 1 (first Bonding).
【０００３】次いで、キャピラリ３を、所定のリバース
高さＨだけ上方に移動した後、第２にボンディングすべ
きリードフレーム１のインナーリード部１ｂと反対方向
に所定のリバース量Ｌだけ略水平に平行移動して図２の
実線位置まで移動させる。このときＩＣチップ２の端子
部２ａにボンディングしたワイヤ端部４ａからキャピラ
リ３に至るボンディングワイヤ４が、第２にボンディン
グすべきインナーリード部１ｂと反対側に傾斜する。そ
のときの傾斜角度θをリバース角度という。なお上記の
ようにキャピラリ３をリバースさせるのは、ボンディン
グワイヤのループ高さおよびループ形状を安定させるた
めである。Then, after moving the capillary 3 upward by a predetermined reverse height H, it is parallel to the inner lead portion 1b of the lead frame 1 to be secondly bonded by a predetermined reverse amount L in a substantially horizontal direction. Move to the position shown by the solid line in FIG. At this time, the bonding wire 4 extending from the wire end portion 4a bonded to the terminal portion 2a of the IC chip 2 to the capillary 3 is inclined to the side opposite to the inner lead portion 1b to be secondly bonded. The tilt angle θ at that time is called a reverse angle. The reason why the capillary 3 is reversed as described above is to stabilize the loop height and loop shape of the bonding wire.
【０００４】次に、キャピラリ３を、図２の鎖線示のよ
うに必要とするボンディング長さまで上昇させたのち、
リードフレームのインナーリード部１ｂ上に移動して第
２ボンディングを行う。それによって図３に示すように
ＩＣチップ２の端子部２ａとリードフレーム１のインナ
ーリード部１ｂとをボンディングワイヤ４で導電接続さ
れるものである。Next, after raising the capillary 3 to the required bonding length as shown by the chain line in FIG. 2,
The second bonding is performed by moving to the inner lead portion 1b of the lead frame. Thereby, as shown in FIG. 3, the terminal portion 2a of the IC chip 2 and the inner lead portion 1b of the lead frame 1 are conductively connected by the bonding wire 4.
【０００５】上記のようなボンディング動作において、
リバースによって第１ボンディングのボールネック部ｎ
に応力歪みが発生することを容易に推察できる。この応
力歪みによってボンディングワイヤの強度が低下するお
それがあり、その応力歪みは前記のリバース角度θが大
きいほど生じやすい。In the above bonding operation,
By the reverse, the ball neck part n of the first bonding
It can be easily inferred that stress strain occurs in the. This stress strain may reduce the strength of the bonding wire, and the stress strain tends to occur as the reverse angle θ increases.
【０００６】一方、上記のようなボンディングワイヤの
強度を評価する方法として、従来一般にボンディング
部、特にボールネック部を、電子顕微鏡で拡大して観察
し、シワ、細り、亀裂、断線等の発生状況を調べること
で強度を推察して判定する。あるいは、図３の鎖線示の
ようにボンディングしたループ状のワイヤＷにフックＦ
等を引っ掛けてプル強度を測定することでワイヤ強度を
評価している。On the other hand, as a method for evaluating the strength of the above-mentioned bonding wire, conventionally, the bonding portion, particularly the ball neck portion is observed by enlarging it with an electron microscope and the occurrence of wrinkles, thinning, cracks, disconnection, etc. is observed. The strength is inferred by examining. Alternatively, a hook F may be attached to the looped wire W bonded as shown by the chain line in FIG.
The wire strength is evaluated by hooking the wire or the like to measure the pull strength.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、上記前
者のようにボンディング部を電子顕微鏡で拡大して観察
するという、いわば外観の定性的判定のみでは実際の強
度を測り知ることができない。また前記後者のようにル
ープ状のワイヤにフックＦ等を引っ掛けてプル強度を測
定する方法では、第１のボンディング部と第２のボンデ
ィング部の合成強度は測定できるが、第１と第２の各ボ
ンディング部の強度を個別に測定することはできない。However, the actual strength cannot be measured and known only by qualitatively judging the appearance, that is, the bonding portion is magnified and observed with an electron microscope as in the former case. Further, in the latter method in which the pull strength is measured by hooking the hook F or the like on the loop-shaped wire, the combined strength of the first bonding portion and the second bonding portion can be measured, but the first and second bonding portions can be measured. The strength of each bonding part cannot be measured individually.
【０００８】そのため、例えば新規なボンディングワイ
ヤを開発する場合、もしくはボンディングワイヤを用い
て各種電子機器を製造する場合においては、そのワイヤ
強度を正確に判定できないため、経験則等に頼って評価
しなければならず、往々にして過剰品質になり勝ちであ
り、材料コストや生産コストが増大する等の不具合があ
る。Therefore, for example, when a new bonding wire is developed or various electronic devices are manufactured by using the bonding wire, the wire strength cannot be accurately determined, and therefore the evaluation must be performed by relying on an empirical rule or the like. However, there is a problem that the quality of the product and the production cost are increased because the quality of the product is often excessive.
【０００９】本発明は上記の問題点に鑑みて提案された
もので、ボンディングしたワイヤの強度、特に第１ボン
ディングのボールネック部における実質強度を定量的に
測定してボンディングワイヤの性能を良好に評価するこ
とのできる評価方法を提供することを目的とする。The present invention has been proposed in view of the above problems, and the strength of the bonded wire, particularly the substantial strength at the ball neck portion of the first bonding is quantitatively measured to improve the performance of the bonding wire. The purpose is to provide an evaluation method that can be evaluated.
【００１０】[0010]
【課題を解決するための手段】上記の目的を達成するた
めに本発明によるボンディングワイヤの評価方法は、以
下のようにしたものである。即ち、ボンディングワイヤ
をボンディングしたときの、ボールネック部の強度を評
価する方法であって、ボンディング時のリバース角度と
ツィーザ引張りによる破断強度を測定してボンディング
ワイヤの性能を評価することを特徴とする。In order to achieve the above object, a bonding wire evaluation method according to the present invention is as follows. That is, it is a method of evaluating the strength of the ball neck portion when the bonding wire is bonded, characterized in that the performance of the bonding wire is evaluated by measuring the reverse angle during bonding and the breaking strength due to the tweezers pulling. .
【００１１】[0011]
【作用】前記のように第１ボンディングのボールネック
部は、ボンディング時のキャピラリのリバース動作によ
って折れ曲がる挙動をとる。このときの折れ曲がった角
度（リバース角度）とツィーザ引張りによりワイヤの強
度を測定することで、前記従来のようにボールネック部
を拡大観察してシワや細り等の発生を調べなくてもボン
ディングワイヤの性能を定量的に判定評価することが可
能となる。As described above, the ball neck portion of the first bonding is bent by the reverse operation of the capillary during bonding. By measuring the strength of the wire by the bent angle (reverse angle) and the tweezers pulling at this time, it is possible to measure the strength of the wire by magnifying and observing the ball neck portion as in the conventional case, and checking the occurrence of wrinkles and thinning of the bonding wire. It is possible to quantitatively evaluate and evaluate the performance.
【００１２】なお、ツィーザ引張りとはボンディングさ
れたワイヤのボール部からワイヤを挟むに充分な長さで
切断し、ボール部につながっているワイヤ他端を挟んで
垂直方向あるいはループ方向に引張り、そのときの破断
強度を求める測定方法であって、例えば市販のワイヤボ
ンド用引張り試験機にツィーザ治具をセットすることに
よって容易に求めることができる。The tweezers pulling is to cut a bonded wire from a ball portion with a length sufficient to hold the wire, and pull the wire in the vertical direction or the loop direction with the other end of the wire connected to the ball portion held between them. In this case, the breaking strength can be easily determined by setting a tweezer jig in a commercially available tensile tester for wire bonding.
【００１３】[0013]
【実施例】以下、本発明のボンディングワイヤの評価方
法を具体的な実施例に基づいて説明する。EXAMPLES The bonding wire evaluation method of the present invention will be described below based on specific examples.
【００１４】ボンディングワイヤとして、純度９９．９
９％の金ワイヤ（４Ｎワイヤ）と、純度９９％の金ワイ
ヤ（合金ワイヤ）とを用いて、それぞれ前記図２のよう
な要領でＩＣチップ２の端子部２ａとリードフレーム１
のインナーリード部１ｂとのボンディングを行った。The bonding wire has a purity of 99.9.
Using 9% gold wire (4N wire) and 99% pure gold wire (alloy wire), the terminal portion 2a of the IC chip 2 and the lead frame 1 are respectively processed as shown in FIG.
Was bonded to the inner lead portion 1b.
【００１５】そのボンディング動作において、前記リバ
ースによってチップ端子部２ａに対する第１ボンディン
グのボールネック部ｎに発生する応力歪みを適正に評価
する方法として、前記リバース角度θを種々変化させて
ワイヤボンディングを行い、各ボールネック部ｎの引張
りによる破断強度を求めた。上記のリバース角度θは、
リバース高さＨとリバース量Ｌから算出した。なおボン
ディング装置によってはリバース高さＨおよびリバース
量Ｌが不明なものもあり、その場合には例えば高速度カ
メラで撮影してフィルムから求めればよい。In the bonding operation, as a method for properly evaluating the stress strain generated in the ball neck portion n of the first bonding with respect to the chip terminal portion 2a by the reverse, wire bonding is performed by changing the reverse angle θ variously. The breaking strength of each ball neck portion n due to pulling was determined. The above reverse angle θ is
It was calculated from the reverse height H and the reverse amount L. Note that the reverse height H and the reverse amount L may be unknown depending on the bonding apparatus. In that case, for example, the reverse height H and the reverse amount L may be obtained from the film by photographing with a high speed camera.
【００１６】上記の破断強度は、図１に示すようにボン
ディングされたワイヤ４を、第１ボンディング位置から
ツィーザ治具Ｔで充分に挟める長さ位置で切断して、そ
の端部を市販のボンディングワイヤ用引張り試験機にセ
ットしたツィーザ治具Ｔで挟み、同図（ａ）のようにボ
ンディング面に対して垂直方向、および同図（ｂ）のよ
うにループ方向にそれぞれ引っ張って、ボールネック部
ｎが破断するときの強度を求めた。以上の結果を、従来
のようにボールネック部を電子顕微鏡により拡大して外
観を観察した評価結果と共に下記表１および表２に示
す。As for the above breaking strength, the wire 4 bonded as shown in FIG. 1 is cut from the first bonding position at a length position where it can be sufficiently sandwiched by the tweezer jig T, and the end portion thereof is commercially available. It is sandwiched between tweezer jigs T set in a tensile tester for wires, and pulled in the direction perpendicular to the bonding surface as shown in FIG. 9A and in the loop direction as shown in FIG. The strength at which n was broken was determined. The above results are shown in Tables 1 and 2 below together with the evaluation results obtained by observing the appearance by enlarging the ball neck portion with an electron microscope as in the conventional case.
【００１７】[0017]
【表１】 [Table 1]
【００１８】[0018]
【表２】 [Table 2]
【００１９】上記表１および表２からも明らかなよう
に、本実施例で用いた純度９９．９９％および純度９９
％の金ワイヤは、それぞれリバース角度θを４０°にし
てボンディングしたとき、外観観察ではボールネック部
に小さいシワが発生し、リバース角度θを６０°にした
とき、それよりも大きなシワが発生しているが、ツィー
ザによる引張り強度は、垂直方向およびループ方向いず
れの場合にも、リバース角度θを０°および２０°にし
てボンディングしたときと同様に充分な強度が確保され
ていることが分かる。この場合、従来の外観観察のみで
は「シワ発生」により強度が低下していると評価されて
いたが、その評価は適切ではなく、過剰な品質が要求さ
れて生産性の向上を妨げていたと考えられる。As is clear from Tables 1 and 2, the purity of 99.99% and the purity of 99 used in this example are 99%.
%, The gold wire has a small wrinkle at the ball neck portion when the reverse angle θ is 40 ° and is bonded, and a wrinkle larger than that when the reverse angle θ is 60 °. However, it is understood that the tensile strength by the tweezers is assured in both the vertical direction and the loop direction as in the case of bonding with the reverse angle θ set to 0 ° and 20 °. In this case, it was evaluated that the strength was decreased due to "wrinkle generation" only by conventional appearance observation, but the evaluation was not appropriate, and it is considered that excessive quality was required and hindered improvement in productivity. To be
【００２０】また、ワイヤの種類によっては外観が良好
であっても強度が不足する場合があり、前記従来のよう
に外観観察のみでボンディングワイヤの性能を評価する
のは妥当ではない。これに対し、本発明によればボンデ
ィングしたワイヤの外観の如何に拘らずボンディング強
度を適切に判定評価できるもので、ワイヤの種類毎の評
価や許容リバース角度等の判定にも有効である。Further, depending on the type of wire, the strength may be insufficient even if the appearance is good, and it is not appropriate to evaluate the performance of the bonding wire only by observing the appearance as in the prior art. On the other hand, according to the present invention, the bonding strength can be appropriately determined and evaluated regardless of the appearance of the bonded wire, and it is also effective for the evaluation for each wire type and the allowable reverse angle.
【００２１】[0021]
【発明の効果】以上説明したように本発明によれば、ボ
ンディングワイヤの研究開発や、ワイヤボンディング工
程を含む各種電子機器等の製造工程において、ボンディ
ングワイヤの適正な評価が得られ、往々にして過剰品質
となり勝ちな、この種のボンディングワイヤの品質の適
性化およびコストの低減を図ることが可能となり、品質
の安定性および経済性を大幅に向上させることができ
る。また、ニーズにあったボンディングワイヤの開発製
造や、最適なボンディング条件の選定等に必要な基礎資
料を提供できる等の効果がある。As described above, according to the present invention, proper evaluation of the bonding wire is often obtained in the research and development of the bonding wire and the manufacturing process of various electronic devices including the wire bonding process. It is possible to optimize the quality and reduce the cost of this type of bonding wire, which is apt to have excessive quality, and it is possible to significantly improve the quality stability and economical efficiency. Further, there is an effect that basic data necessary for developing and manufacturing a bonding wire that meets needs and selecting an optimum bonding condition can be provided.
【図面の簡単な説明】[Brief description of drawings]
【図１】（ａ）、（ｂ）は本発明の実施例で行ったツィ
ーザ引張り試験の説明図。1A and 1B are explanatory views of a tweezers tensile test conducted in an example of the present invention.
【図２】ワイヤボンディングの動作説明図。FIG. 2 is an operation explanatory view of wire bonding.
【図３】ボンディング後のワイヤおよび従来のプル試験
の説明図。FIG. 3 is an explanatory view of a wire after bonding and a conventional pull test.
１ リードフレーム １ａ パット部 １ｂ インナーリード部 ２ ＩＣチップ ２ａ 端子部 ３ キャピラリ ４ ボンディングワイヤ Ｔ ツィーザ治具 ｎ ボールネック部 Ｈ リバース高さ Ｌ リバース量 θ リバース角度 1 lead frame 1a pad part 1b inner lead part 2 IC chip 2a terminal part 3 capillary 4 bonding wire T tweezer jig n ball neck part H reverse height L reverse amount θ reverse angle
Claims (1)
ときの、ボールネック部の強度を評価する方法であっ
て、ボンディング時のリバース角度とツィーザ引張りに
よる破断強度を測定してボンディングワイヤの性能を評
価することを特徴とするボンディングワイヤの評価方
法。1. A method for evaluating the strength of a ball neck portion when a bonding wire is bonded, which comprises evaluating a reverse angle at the time of bonding and a breaking strength by pulling a tweezer to evaluate the performance of the bonding wire. Characteristic bonding wire evaluation method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7274811A JPH0997822A (en) | 1995-09-28 | 1995-09-28 | Method of evaluating bonding wire |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7274811A JPH0997822A (en) | 1995-09-28 | 1995-09-28 | Method of evaluating bonding wire |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0997822A true JPH0997822A (en) | 1997-04-08 |
Family
ID=17546903
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7274811A Withdrawn JPH0997822A (en) | 1995-09-28 | 1995-09-28 | Method of evaluating bonding wire |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0997822A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4653166B2 (en) * | 2004-05-18 | 2011-03-16 | デイジ プレシジョン インダストリーズ リミテッド | Test equipment |
| CN110082494A (en) * | 2019-05-05 | 2019-08-02 | 浙江佳博科技股份有限公司 | A kind of bonding wire quality determining method |
| CN110501223A (en) * | 2019-08-26 | 2019-11-26 | 湖北省工业建筑集团有限公司 | A kind of irregular aggregate test specimen, bonding tensile strength test method and device |
| CN111323293A (en) * | 2020-03-23 | 2020-06-23 | 天津大学 | Microelectronic device lead bonding strength test fixture under temperature environment |
-
1995
- 1995-09-28 JP JP7274811A patent/JPH0997822A/en not_active Withdrawn
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4653166B2 (en) * | 2004-05-18 | 2011-03-16 | デイジ プレシジョン インダストリーズ リミテッド | Test equipment |
| CN110082494A (en) * | 2019-05-05 | 2019-08-02 | 浙江佳博科技股份有限公司 | A kind of bonding wire quality determining method |
| CN110501223A (en) * | 2019-08-26 | 2019-11-26 | 湖北省工业建筑集团有限公司 | A kind of irregular aggregate test specimen, bonding tensile strength test method and device |
| CN110501223B (en) * | 2019-08-26 | 2020-03-31 | 湖北省工业建筑集团有限公司 | Irregular aggregate test piece, and method and device for testing bonding tensile strength |
| CN111323293A (en) * | 2020-03-23 | 2020-06-23 | 天津大学 | Microelectronic device lead bonding strength test fixture under temperature environment |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20021203 |