JP3514354B2 - Bonding wire evaluation method - Google Patents
Bonding wire evaluation methodInfo
- Publication number
- JP3514354B2 JP3514354B2 JP27799896A JP27799896A JP3514354B2 JP 3514354 B2 JP3514354 B2 JP 3514354B2 JP 27799896 A JP27799896 A JP 27799896A JP 27799896 A JP27799896 A JP 27799896A JP 3514354 B2 JP3514354 B2 JP 3514354B2
- Authority
- JP
- Japan
- Prior art keywords
- wire
- bonding
- strength
- angle
- bonding wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/859—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector involving monitoring, e.g. feedback loop
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01033—Arsenic [As]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01082—Lead [Pb]
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、例えばＩＣやトラ
ンジスタなどの製造工程を含む各種電子機器の製造工
程、またはボンディングワイヤを開発製造する場合など
において、ワイヤボンディング、特にボ−ルボンディン
グを行った後のボンディングワイヤの強度（以下これを
「ワイヤ強度」という。）を評価する評価方法に関す
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention performs wire bonding, particularly ball bonding, in the process of manufacturing various electronic devices including the process of manufacturing ICs and transistors, or in the case of developing and manufacturing bonding wires. The present invention relates to an evaluation method for evaluating the strength of a subsequent bonding wire (hereinafter referred to as "wire strength").
【０００２】[0002]
【従来の技術】従来、例えばリードフレーム上に搭載し
たＩＣチップの端子部とリードフレームのインナーリー
ド部とをワイヤボンディングする場合には、一般に以下
の要領でボンディング作業が行われる。すなわち、先ず
リードフレームのパッド部に配設されたＩＣチップの端
子にボンディング装置のキャピラリーから順次繰り出さ
れるボンディングワイヤの一端をボールボンディング
（第一ボンディング）する。2. Description of the Related Art Conventionally, for example, when wire-bonding a terminal portion of an IC chip mounted on a lead frame and an inner lead portion of a lead frame, the bonding work is generally performed in the following manner. That is, first, ball bonding (first bonding) is performed on one end of a bonding wire sequentially fed from the capillary of the bonding apparatus to the terminal of the IC chip arranged on the pad portion of the lead frame.
【０００３】次いで、キャピラリを所定の高さ（リバー
ス高さ）だけ上方に移動させた後、ボンディングすべき
リードフレームのインナーリード部と反対方向に所定の
距離（リバース量）だけ略水平に平行移動（リバース）
させる。このときＩＣチップの端子部にボンディングし
たワイヤの端部からキャピラリに至るボンディングワイ
ヤが第２にボンディングすべきインナーリード部と反対
側に傾斜状に張り出される。このときの傾斜角度をリバ
ース角度という。なお上記のようにキャピラリを移動さ
せるのは、第２ボンディング終了後のボンディングワイ
ヤのループ高さおよびループ形状を安定させるためであ
る。Next, after moving the capillary upward by a predetermined height (reverse height), the capillary is moved substantially horizontally in a direction opposite to the inner lead portion of the lead frame to be bonded by a predetermined distance (reverse amount). (reverse)
Let At this time, the bonding wire extending from the end of the wire bonded to the terminal portion of the IC chip to the capillary is obliquely projected to the side opposite to the inner lead portion to be secondly bonded. The tilt angle at this time is called a reverse angle. The reason for moving the capillaries as described above is to stabilize the loop height and loop shape of the bonding wire after the second bonding is completed.
【０００４】次にキャピラリを、キャピラリー先端部か
らでているボンディングワイヤの長さが所望の長さとな
るまで上昇させたのち、リードフレームのインナーリー
ド部上に移動させ、インナーリード部にボンディング
（第２ボンディング）する。こうしてＩＣチップの端子
部とリードフレームのインナーリード部とをボンディン
グワイヤで接続する。Next, the capillary is raised until the length of the bonding wire extending from the tip of the capillary reaches a desired length, and then moved to the inner lead portion of the lead frame to bond (first) to the inner lead portion. 2 bonding). In this way, the terminal portion of the IC chip and the inner lead portion of the lead frame are connected by the bonding wire.
【０００５】上記のようなボンディング工程において、
リバースによって第１ボンディングのボールネック部に
応力歪みが発生する。この応力歪みは前記のリバース角
度θが大きいほど生じやすい。この応力歪みが大きけれ
ば大きいほどワイヤ強度が低下するおそれが高い。In the above bonding process,
The reverse causes stress distortion in the ball neck portion of the first bonding. This stress strain is more likely to occur as the reverse angle θ is larger. The greater the stress strain, the more likely the wire strength will decrease.
【０００６】ところで、ワイヤ強度はボンディング部、
特にボールネック部を、電子顕微鏡で拡大して観察し、
シワ、細り、亀裂、断線等の発生状況を調べることで強
度を推定したり、ボンディングされたワイヤのループ状
部にフック等を引っ掛けプル強度を測定することよりワ
イヤ強度を求めたり、またあるいは、ボンディングされ
たワイヤの第２ボンディング部近傍を切断し、ワイヤを
第１ボンディング部接合面に対して垂直に立てた後、ツ
ィーザ引っ張り試験機を用いてワイヤを引っ張り破断強
度を測定することにより評価している。By the way, the wire strength is
In particular, the ball neck is magnified and observed with an electron microscope,
Estimate the strength by examining the occurrence of wrinkles, thinness, cracks, disconnection, etc., or obtain the wire strength by measuring the pull strength by hooking a hook etc. on the looped part of the bonded wire, or, It is evaluated by cutting the vicinity of the second bonding part of the bonded wire, standing the wire perpendicular to the bonding surface of the first bonding part, and then measuring the breaking strength by pulling the wire using a tweezers tensile tester. ing.
【０００７】[0007]
【発明が解決しようとする課題】しかしながら、ボンデ
ィング部を電子顕微鏡で拡大して観察するという方法で
は、外観と実際のワイヤ強度との対応が必ずしも取れ
ず、実際の強度を測り知ることができない。However, in the method of enlarging and observing the bonding portion with an electron microscope, the external appearance and the actual wire strength cannot always be corresponded, and the actual strength cannot be measured and known.
【０００８】またワイヤのループ状部にフック等を引っ
掛けプル強度を測定する方法では、第１のボンディング
部のボ−ル部と第２のボンディング部の合成強度を測定
することになり、各ボンディング部の強度を個別に測定
することはできない。Further, in the method of hooking a hook or the like on the loop portion of the wire to measure the pull strength, the combined strength of the ball portion of the first bonding portion and the second bonding portion is measured. The strength of the parts cannot be measured individually.
【０００９】さらにボンディングしたワイヤの第２ボン
ディング部付近を切断し、ワイヤを第１ボンディング部
接合面に対して垂直に立てた後、ツィーザ引っ張り試験
でワイヤを引っ張り、破断強度を測定する方法では、第
１のボンディング部の強度を個別に測定できるが、ワイ
ヤを垂直に立てる際にボールネック部に不特定量の応力
が加わるため、ワイヤ強度が劣化または強化されるおそ
れがある。Further, in the method of cutting the bonded wire in the vicinity of the second bonding portion, standing the wire upright with respect to the bonding surface of the first bonding portion, and then pulling the wire by the tweezers tensile test to measure the breaking strength, Although the strength of the first bonding portion can be individually measured, an unspecified amount of stress is applied to the ball neck portion when the wire is erected vertically, so that the wire strength may be deteriorated or strengthened.
【００１０】ところで、新規なボンディングワイヤを開
発する場合、もしくはボンディングワイヤを用いて各種
電子機器を製造する場合、ワイヤ強度が重要となるが、
以上述べたように従来の方法ではワイヤ強度を正確に評
価できない。このため、経験則等に頼ってワイヤ強度を
評価値より推定しなければならず、往々にして過剰品質
になりがちであり、材料コストや生産コストが増大する
傾向が強いという不具合がある。By the way, when a new bonding wire is developed or various electronic devices are manufactured using the bonding wire, the wire strength is important.
As described above, the conventional method cannot accurately evaluate the wire strength. For this reason, the wire strength must be estimated from the evaluation value by relying on empirical rules, etc., and there is a problem that the quality of the wire tends to be excessive and the material cost and the production cost tend to increase.
【００１１】本発明は、上記の問題点に鑑みて開発され
たもので、ボンディングしたワイヤの強度、特に第１ボ
ンディングのボ−ルネック部における実質強度を定量的
に評価しうる方法の提供を課題とする。The present invention has been developed in view of the above problems, and it is an object of the present invention to provide a method capable of quantitatively evaluating the strength of a bonded wire, in particular, the substantial strength at the ball neck portion of the first bonding. And
【００１２】[0012]
【課題を解決するための手段】上記の目的を達成する本
発明のボンディングワイヤの評価方法は、以下のように
構成したものである。The bonding wire evaluation method of the present invention that achieves the above object is configured as follows.
【００１３】即ち、ボンディングワイヤをボンディング
したときの、ボールネック部の強度をツィーザ引っ張り
試験機を用いたプル試験で評価する方法であって、測定
対象のボンディング位置からツィーザ治具で十分に挟め
る長さとなる位置でワイヤを切断し、ワイヤとリードフ
レームのなす角度をそのままに維持しつつ、リードフレ
ームを固定した試料台を傾斜させ、ワイヤの端部を引っ
張り試験機にセットしたツィーザ治具で挟み、上方に引
っ張って、ボールネック部が破断する時の強度を求める
ものであり、試料台と水平面とのなす角度を５６〜６６
゜とし、ツィーザ治具でワイヤを引っ張る際にワイヤに
荷重が掛かり切断される直前の状態でワイヤと水平面と
が成す角度（引っ張り角度）を６５°〜７５°とするも
のである。That is, this is a method of evaluating the strength of the ball neck portion when a bonding wire is bonded by a pull test using a tweezers tensile tester, and a length that can be sufficiently sandwiched by a tweezer jig from a bonding position to be measured. Cut the wire at a certain position, while keeping the angle between the wire and the lead frame as it is, tilt the sample table with the lead frame fixed and pinch the end of the wire with the tweezer jig set in the tensile tester. , The strength at the time of breaking the ball neck portion by pulling upward is determined, and the angle formed by the sample table and the horizontal plane is 56 to 66.
The angle formed by the wire and the horizontal plane (pulling angle) is between 65 ° and 75 ° immediately before the wire is loaded and cut when the wire is pulled by the tweezers jig.
【００１４】こうしてツィーザ引っ張り試験による破断
強度を測定すれば、ワイヤ強度を劣化または強化させる
ことなくボンディングワイヤの性能を評価することがで
きる。By measuring the breaking strength by the tweezers tensile test in this manner, the performance of the bonding wire can be evaluated without deteriorating or strengthening the wire strength.
【００１５】[0015]
【発明の実施の形態】ツィーザ引っ張り試験において試
料台と水平面とのなす角度を５６〜６６゜とするのは、
切断状態のままでワイヤを傾け、ワイヤをツィーザ治具
で引き上げた際に余分な付加がボンディング部にかから
ないようにするためである。BEST MODE FOR CARRYING OUT THE INVENTION In the tweezers tensile test, the angle between the sample table and the horizontal plane is 56 to 66 °.
This is because the wire is tilted in the cut state so that excess bonding is not applied to the bonding portion when the wire is pulled up by the tweezer jig.
【００１６】また、試料台を傾けた状態で引っ張り角度
を６５°〜７５°の範囲内に設定するのは、この角度に
なるようにして引っ張ればツィーザ引っ張り試験機を用
いて破断強度を測定した際に、従来のようにボ−ルネッ
ク部を拡大観察し、シワや細り等の発生を調べなくても
ボンディングワイヤの性能を定量的に判定評価可能とな
るからである。Further, the tensile angle is set within the range of 65 ° to 75 ° with the sample stage tilted. The tensile strength is measured by using a tweezers tensile tester if the sample is pulled at this angle. At this time, the performance of the bonding wire can be quantitatively judged and evaluated without observing the occurrence of wrinkles and thinning by enlarging and observing the ball neck portion as in the conventional case.
【００１７】なお、本発明におけるツィ−ザ引っ張り試
験機とは、例えば、市販のワイヤボンド用引っ張り試験
機にてツィ−ザ治具をセットしたものである。The tweezers tension tester in the present invention is, for example, a tweezers jig set by a commercially available tension tester for wire bond.
【００１８】（検討例）以下、本発明のボンディングワ
イヤの評価方法を具体的な検討例に基づいて説明する。(Study Example) The method for evaluating the bonding wire of the present invention will be described below based on a specific study example.
【００１９】ボンディングワイヤとして、純度９９．９
９％の金ワイヤ（４Ｎワイヤ）と、純度９９％の金ワイ
ヤ（合金ワイヤ）とを用いて、ボンディング時のリバー
スによってチップ端子部に対する第１ボンディングのボ
ールネック部に発生する応力歪みを評価するために、リ
バース角度を種々変化させてＩＣチップの端子部とリー
ドフレームのインナーリード部とをボンディングした。
なお、リバース角度はリバース高さＨとリバース量Ｌか
ら算出した。The bonding wire has a purity of 99.9.
A 9% gold wire (4N wire) and a 99% pure gold wire (alloy wire) are used to evaluate the stress strain generated in the ball neck portion of the first bonding to the chip terminal portion due to the reverse at the time of bonding. Therefore, the reverse angle was variously changed and the terminal portion of the IC chip and the inner lead portion of the lead frame were bonded.
The reverse angle was calculated from the reverse height H and the reverse amount L.
【００２０】次いで、従来法に従いボールネック部を、
電子顕微鏡で拡大して観察し、シワ、細り、亀裂、断線
等の発生状況を調べた。Then, according to the conventional method, the ball neck is
It was magnified and observed with an electron microscope to examine the occurrence of wrinkles, thinning, cracks, disconnection, and the like.
【００２１】その後、各ループのボールネック部を引っ
張り角度７４°で引張る本発明の方法に従い破断強度を
求めた。引っ張り角度とはツィーザ治具でワイヤを引っ
張る際にワイヤに荷重が掛かり切断される直前の状態で
ワイヤと水平面とが成す角度を言う。Then, the breaking strength was determined according to the method of the present invention in which the ball neck portion of each loop was pulled at a pulling angle of 74 °. The pulling angle means an angle formed by the wire and the horizontal plane immediately before the wire is loaded and cut when the wire is pulled by the tweezers jig.
【００２２】具体的には、図１に示したように、リード
フレームを試料台に固定し、ボンディングされたワイヤ
を第１ボンディング位置からツィーザ治具で十分に挟め
る長さとなる位置で切断し、そのまま試料台を傾斜して
ワイヤが破断するときの傾きと水平面のなす角度（引っ
張り角度）が７４°程度になるようにし、ワイヤの端部
を引っ張り試験機にセットしたツィーザ治具で挟み、上
方に引っ張って、ボールネック部が破断する時の強度を
求めた。なお、このとき試料台と水平面との成す角度は
６５°であった。Specifically, as shown in FIG. 1, the lead frame is fixed to the sample stand, and the bonded wire is cut from the first bonding position at a position where it can be sufficiently sandwiched by a tweezer jig, Inclining the sample table so that the angle when the wire breaks and the horizontal plane (pulling angle) is about 74 °, sandwich the end of the wire with the tweezer jig set in the pulling tester, Then, the strength at the time of breaking the ball neck portion was determined. At this time, the angle formed by the sample table and the horizontal plane was 65 °.
【００２３】従来法で得られた結果と本発明の方法で得
られた結果とを表１、２に示した。The results obtained by the conventional method and the results obtained by the method of the present invention are shown in Tables 1 and 2.
【００２４】
上記表１および表２からも明らかなように、本実施例で
用いた純度９９．９９％および９９％の金ワイヤでは、
リバース角度を４０°および７０°に設定してボンディ
ングしたときに外観観察ではそれぞれシワや細りが 発
生しているが、本発明の引っ張り角度７４°でのツィー
ザ引っ張り破断強度ではリバース角度０°のときと同様
に十分な強度が確保されていることが分る。[0024] As is clear from Tables 1 and 2, the gold wires used in this example with the purity of 99.99% and 99%,
When the reverse angle is set to 40 ° and 70 ° and bonding is performed, wrinkles and thinning are respectively observed in the external appearance. It can be seen that sufficient strength is assured.
【００２５】よって、従来の外観観察のみではシワや細
りの発生により強度が低下していると評価されていた
が、その判断は適切ではなく、過剰品質が要求されて生
産性の向上を妨げていたと考えられる。Therefore, it has been evaluated that the strength is deteriorated due to the occurrence of wrinkles and thinning only by the conventional appearance observation, but the judgment is not proper, and the excessive quality is required, which hinders the improvement of productivity. It is thought that
【００２６】以上のように外観観察のみでボンディング
ワイヤの性能を評価することは妥当ではない。これに対
し、本発明によればボンディングしたワイヤの外観の如
何に拘らず、ボンディング強度を適切に判定評価できる
ものであるとともに、ワイヤの種類毎の評価や許容リバ
ース角度等の判定にも有効である。As described above, it is not appropriate to evaluate the performance of the bonding wire only by observing the appearance. On the other hand, according to the present invention, the bonding strength can be appropriately judged and evaluated regardless of the appearance of the bonded wire, and it is also effective for the evaluation of each wire type and the judgment of the allowable reverse angle. is there.
【００２７】次に、引っ張り角度を６５°、７０°、７
５゜として上記と同様に検討した。得られた結果は同様
であり、大差はなかった。なお、このときの試料台が水
平面となす角度はそれぞれ、５６゜、６１゜、６６゜で
あった。Next, pulling angles are 65 °, 70 °, 7
The same examination as above was carried out at 5 °. The results obtained were similar, not much different. The angles formed by the sample table and the horizontal plane at this time were 56 °, 61 °, and 66 °, respectively.
【００２８】本検討例では、試料台を傾斜させている
が、図２のように試料台を水平にしたままワイヤを静か
に起こし、引っ張り角度が６５〜７５゜となるように測
定しても本発明の方法と同様な結果が得られるが、ワイ
ヤに外的ストレスを実質的に与えることなくワイヤを引
き起こすことができるようするためには、人手に頼る場
合には熟練が要り、装置に頼るには複雑となり、いずれ
にしても簡便な方法とならない。In the present examination example, the sample stage is tilted, but as shown in FIG. 2, even if the wire is gently raised with the sample stage horizontal, the measurement can be made so that the pulling angle is 65 to 75 °. A result similar to the method of the invention is obtained, but it requires skill and reliance on the device to be able to cause the wire to be substantially free of external stress on it. However, it is not a simple method in any case.
【００２９】[0029]
【発明の効果】本発明によれば、ボンディングワイヤの
研究開発や、ワイヤボンディング工程を含む各種電子機
器等の製造工程において、ボンディングワイヤの適性な
評価が得られ、往々にして過剰品質になり勝ちな、この
種のボンディングワイヤの品質の適正化およびコストの
低減を図ることが可能となり、品質の安定性および経済
性を大幅に向上させることができる。また、ニーズに合
ったボンディングワイヤの開発製造や、最適なボンディ
ング条件の選定等に必要な基礎資料を提供できる等の効
果がある。According to the present invention, in a research and development of a bonding wire and a manufacturing process of various electronic equipments including a wire bonding process, an appropriate evaluation of the bonding wire is obtained, and the excessive quality is apt to occur. In addition, the quality of this type of bonding wire can be optimized and the cost can be reduced, and the stability of quality and the economical efficiency can be significantly improved. Further, there is an effect that basic data necessary for developing and manufacturing a bonding wire which meets needs and selecting an optimum bonding condition can be provided.
【図１】本発明の検討例の概要を示す図である。FIG. 1 is a diagram showing an outline of a study example of the present invention.
【図２】試料台を水平にしたままワイヤを静かに起こ
し、引っ張り角度が６５〜７５゜となるようにして測定
する場合の概要を示す図である。FIG. 2 is a diagram showing an outline of a case in which a wire is gently raised with the sample table kept horizontal and a measurement is performed with a pulling angle of 65 to 75 °.
Claims (2)
たときの、ボールネック部の強度をツィーザ引っ張り試
験機を用いたプル試験で評価する方法であって、測定対
象のボンディング位置からツィーザ治具で十分に挟める
長さとなる位置でワイヤを切断し、ワイヤとリードフレ
ームのなす角度をそのままに維持しつつ、リードフレー
ムを固定した試料台を傾斜させ、ワイヤの端部を引っ張
り試験機にセットしたツィーザ治具で挟み、上方に引っ
張って、ボールネック部が破断する時の強度を求めるこ
とを特徴とするボンディングワイヤの評価方法。1. A method for evaluating the strength of a ball neck portion when a bonding wire is bonded by a pull test using a tweezers tensile tester, and a length that can be sufficiently sandwiched by a tweezer jig from a bonding position to be measured. Cut the wire at a certain position, while keeping the angle between the wire and the lead frame as it is, tilt the sample table with the lead frame fixed and pinch the end of the wire with the tweezer jig set in the tensile tester. A method for evaluating a bonding wire, which is characterized in that the strength at the time of breaking the ball neck portion is obtained by pulling upward.
と水平面とのなす角度を５６〜６６゜とし、ツィーザ治
具でワイヤを引っ張る際にワイヤに荷重が掛かり切断さ
れる直前の状態でワイヤと水平面とが成す角度（引っ張
り角度）を６５°〜７５°とするボンディングワイヤの
評価方法。2. The method according to claim 1, wherein the angle between the sample table and the horizontal plane is 56 to 66 °, and the wire is loaded just before being cut by a tweezer jig when the wire is pulled. A bonding wire evaluation method in which the angle (pull angle) formed by the horizontal plane and the horizontal plane is 65 ° to 75 °.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27799896A JP3514354B2 (en) | 1996-10-21 | 1996-10-21 | Bonding wire evaluation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27799896A JP3514354B2 (en) | 1996-10-21 | 1996-10-21 | Bonding wire evaluation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10261665A JPH10261665A (en) | 1998-09-29 |
| JP3514354B2 true JP3514354B2 (en) | 2004-03-31 |
Family
ID=17591210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27799896A Expired - Fee Related JP3514354B2 (en) | 1996-10-21 | 1996-10-21 | Bonding wire evaluation method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3514354B2 (en) |
-
1996
- 1996-10-21 JP JP27799896A patent/JP3514354B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPH10261665A (en) | 1998-09-29 |
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