JPH0997794A - Bump of flip chip - Google Patents
Bump of flip chipInfo
- Publication number
- JPH0997794A JPH0997794A JP7253478A JP25347895A JPH0997794A JP H0997794 A JPH0997794 A JP H0997794A JP 7253478 A JP7253478 A JP 7253478A JP 25347895 A JP25347895 A JP 25347895A JP H0997794 A JPH0997794 A JP H0997794A
- Authority
- JP
- Japan
- Prior art keywords
- bump
- recess
- hammer
- cut surface
- flip chip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/11—Manufacturing methods
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1301—Shape
- H01L2224/13012—Shape in top view
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/1301—Shape
- H01L2224/13016—Shape in side view
- H01L2224/13018—Shape in side view comprising protrusions or indentations
- H01L2224/13019—Shape in side view comprising protrusions or indentations at the bonding interface of the bump connector, i.e. on the surface of the bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/35—Mechanical effects
- H01L2924/351—Thermal stress
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Wire Bonding (AREA)
Abstract
Description
【0001】[0001]
【発明の技術分野】本願はフリップチップのバンプに関
する。TECHNICAL FIELD This application relates to flip-chip bumps.
【0002】[0002]
【従来の技術】図5は、従来のフリップチップのバンプ
およびその近傍の様子を示した断面図である。1は金バ
ンプ、2は半導体素子が形成されている半導体基板、3
は半導体基板2上に形成された電極、4はパシベーショ
ンである。金バンプ1は、ボールボンディング技術によ
って形成されたボールを根元から切断して形成される
が、ボールの高さを揃えるために切断面をハンマでたた
いて平らにしてある。2. Description of the Related Art FIG. 5 is a cross-sectional view showing a bump of a conventional flip chip and its vicinity. 1 is a gold bump, 2 is a semiconductor substrate on which a semiconductor element is formed, 3
Is an electrode formed on the semiconductor substrate 2 and 4 is passivation. The gold bump 1 is formed by cutting a ball formed by a ball bonding technique from the root, and the cut surface is struck with a hammer to be flat in order to make the height of the ball uniform.
【0003】図6は、上記金バンプ1を用いたフリップ
チップをプリント基板等に実装した場合の様子を示した
ものである。セラミック基板5上に形成された導電パタ
ーン6とフリップチップの金バンプ1とがダイペースト
7を用いて接続されている。ダイペースト7には一般的
にエポキシ系の銀ペーストが用いられる。FIG. 6 shows a state in which a flip chip using the gold bump 1 is mounted on a printed board or the like. The conductive pattern 6 formed on the ceramic substrate 5 and the gold bump 1 of the flip chip are connected using a die paste 7. An epoxy-based silver paste is generally used as the die paste 7.
【0004】[0004]
【発明が解決しようとする課題】バンプの高さは機械的
精度によって左右されるために、通常±10μm程度の
バラツキが生じる。したがって、ダイペーストを用いて
フリップチップを基板に実装した場合、図6に示すよう
に、ダイペーストの厚さが不均一になる。ダイペースト
(エポキシ系の銀ペースト)の熱分解温度は通常300
度C程度であるが、半田リフロー炉(最高温度230〜
255度c程度)を通すとバンプとダイペーストとの間
にストレスが集中する。その結果、接触抵抗が増大した
りクラックによってオープン不良が発生したりするとい
った問題点があった。実際にバンプの高さのバラツキが
±10μm程度以上あると、数%〜数10%程度の接触
抵抗の増大やオープン不良の発生が認められる。Since the height of the bump depends on the mechanical accuracy, a variation of about ± 10 μm usually occurs. Therefore, when the flip chip is mounted on the substrate using the die paste, the thickness of the die paste becomes non-uniform as shown in FIG. The thermal decomposition temperature of die paste (epoxy silver paste) is usually 300.
The solder reflow furnace (maximum temperature 230 ~
The stress concentrates between the bumps and the die paste when it is passed through a temperature of about 255 degrees c. As a result, there are problems that contact resistance increases and open defects occur due to cracks. When the height variation of the bumps is about ± 10 μm or more, the contact resistance increases by about several percent to several tens of percent and the open failure occurs.
【0005】上記問題点を改善するために、ダイペース
トに混入する金属として銀の代わりにパラジウムを用い
ることも考えられるが、高価なため適当でない。また、
エポキシ系樹脂の代わりにポリイミド系樹脂を用いて耐
熱性を向上させたものもあるが、応力に弱いためフリッ
プチップの実装には適していない。In order to solve the above problems, it is possible to use palladium instead of silver as a metal mixed in the die paste, but it is not suitable because it is expensive. Also,
Although there is a resin whose heat resistance is improved by using a polyimide resin instead of an epoxy resin, it is not suitable for flip-chip mounting because it is weak against stress.
【0006】本願の目的は、接触抵抗の増大やクラック
によるオープン不良の発生を防止することが可能なフリ
ップチップのバンプを提供することである。An object of the present application is to provide a flip-chip bump capable of preventing an open defect caused by an increase in contact resistance and cracks.
【0007】[0007]
【課題を解決するための手段】本願に係わるフリップチ
ップのバンプは、バンプの上面を凸凹状にしたことを特
徴とする。The bumps of the flip chip according to the present invention are characterized in that the upper surfaces of the bumps are uneven.
【0008】[0008]
【発明の実施の形態】図1は、本願に係わるバンプの第
1の実施の形態を示したものであり、同図(A)はバン
プの上面図、同図(B)はバンプの断面図である。すな
わち、バンプの上平面1aに凹部1b(円錐状の穴、深
さは、ボール径に応じて0.1μm〜数10μm程度と
するが、通常は数μm程度)を設けることにより、バン
プとダイペーストとの密着性(接着性)を向上させ、熱
応力による接触抵抗の増大やクラックによるオープン不
良の発生を防止するようにしたものである。形成方法は
従来のバンプの形成方法を改良したものであり、具体的
には、ボールボンディング、ワイヤカット(ボールの切
断)、切断面のハンマによる平坦化(ボールの高さを揃
えるために切断面をハンマでたたいて平坦化する。)、
凹部の形成、という工程で形成される。凹部は、凸状の
突起部を有するハンマで平坦化された切断面をたたいて
形成する。なお、上記工程のうち、切断面のハンマによ
る平坦化および凹部の形成の両工程を共通化してもよい
(ワイヤカット工程の後直接凸状の突起部を有するハン
マで切断面をたたいて凹部を形成する。)。1A and 1B show a first embodiment of a bump according to the present invention. FIG. 1A is a top view of the bump, and FIG. 1B is a sectional view of the bump. Is. That is, by providing a concave portion 1b (conical hole, depth is about 0.1 μm to several tens of μm depending on the ball diameter, usually about several μm) on the upper plane 1a of the bump, the bump and die The adhesiveness with the paste (adhesiveness) is improved to prevent an increase in contact resistance due to thermal stress and the occurrence of open defects due to cracks. The forming method is a modification of the conventional bump forming method. Specifically, ball bonding, wire cutting (cutting the ball), and flattening the cut surface by a hammer (to make the height of the ball uniform, Flatten with a hammer.),
It is formed in the process of forming a recess. The concave portion is formed by striking a flattened cut surface with a hammer having a convex protrusion portion. Of the above steps, both the flattening of the cut surface with a hammer and the formation of the recess may be common (after the wire cutting step, the cut surface is directly struck by a hammer having a convex projection) to form the recess. To form).
【0009】図2は、本願に係わるバンプの第2の実施
の形態を示したものであり、同図(A)はバンプの上面
図、同図(B)はバンプの断面図である。これは、バン
プの上平面1aに複数の凹部1c(円錐状の穴、深さ
は、ボール径に応じて0.1μm〜数10μm程度とす
るが、通常は数μm程度)を設けることにより、バンプ
とダイペーストとの接触面積を増大させ、バンプとダイ
ペーストとの密着性(接着性)を上記第1の実施の形態
の場合よりもさらに向上させるようにしたものである。
バンプの形成方法は上記第1の実施の形態と基本的に同
様であり、凸状あるいは針状の突起部を有するハンマを
用いて平坦化された切断面あるいはワイヤカット後の切
断面をたたいて凹部を形成する。2A and 2B show a second embodiment of a bump according to the present invention. FIG. 2A is a top view of the bump and FIG. 2B is a sectional view of the bump. This is because by providing a plurality of recesses 1c (conical holes, the depth is about 0.1 μm to several tens of μm depending on the ball diameter, usually about several μm) on the upper plane 1a of the bump, The contact area between the bump and the die paste is increased, and the adhesion (adhesiveness) between the bump and the die paste is further improved as compared with the case of the first embodiment.
The method of forming the bumps is basically the same as that of the first embodiment, and the cut surface flattened by using a hammer having a convex or needle-shaped protrusion or the cut surface after wire cutting is tapped. To form a recess.
【0010】図3は、本願に係わるバンプの第3の実施
の形態を示したものであり、同図(A)はバンプの上面
図、同図(B)はバンプの断面図である。これは、バン
プの上平面1aに凹部1d(縦横に形成された断面形状
が三角形の溝、深さは、ボール径に応じて0.1μm〜
数10μm程度とするが、通常は数μm程度)を設ける
ことにより、バンプとダイペーストとの接触面積を増大
させ、バンプとダイペーストとの密着性(接着性)を上
記第1の実施の形態の場合よりもさらに向上させるよう
にしたものである。なお、バンプの形成方法は上記第1
の実施の形態と同様であり、凸状部が縦横に形成された
ハンマを用いて平坦化された切断面あるいはワイヤカッ
ト後の切断面をたたいて凹部を形成する。3A and 3B show a third embodiment of a bump according to the present application. FIG. 3A is a top view of the bump and FIG. 3B is a sectional view of the bump. This is a recess 1d on the upper plane 1a of the bump (a groove having a triangular cross section formed vertically and horizontally, and the depth is 0.1 μm to 0.1 μm depending on the ball diameter.
The contact area between the bump and the die paste is increased by providing the thickness of about several tens of μm, but usually about several μm), and the adhesion (adhesiveness) between the bump and the die paste is increased according to the first embodiment. It is designed to be improved further than in the case of. The bump forming method is the same as the first method described above.
Similar to the above-described embodiment, a concave portion is formed by hitting a flattened cut surface or a cut surface after wire cutting with a hammer in which convex portions are formed vertically and horizontally.
【0011】図4は、本願に係わるバンプの第4の実施
の形態を示したものである。これは、上記第2の実施の
形態を改良したものであり、バンプの上平面1aに複数
の凹部1e(円錐状の穴)を設けるとともに、バンプの
上平面1a以外の部分にも凹部1f(円錐状の穴)を設
けたものである。FIG. 4 shows a bump according to a fourth embodiment of the present invention. This is an improvement of the second embodiment described above. A plurality of recesses 1e (conical holes) are provided on the upper plane 1a of the bump, and the recesses 1f ( It has a conical hole).
【0012】なお、上記第1、第2および第4の実施の
形態においては凹部の穴の形状を円錐状としたが、角錐
状、円柱状、角柱状等でもよい。また、上記第3の実施
の形態においては凹部の溝の断面形状を三角形とした
が、断面形状が長方形、台形等でもよい。In the first, second and fourth embodiments described above, the hole of the recess has a conical shape, but it may have a pyramidal shape, a cylindrical shape, a prismatic shape or the like. Further, in the third embodiment, the groove has a triangular cross section, but the cross section may be rectangular, trapezoidal, or the like.
【0013】また、上記第1〜第4の実施の形態におい
ては金バンプの場合について説明したが、半田バンプを
ダイペーストで固定する場合にも適用可能である。Further, although the case of gold bumps has been described in the first to fourth embodiments, it is also applicable to the case of fixing solder bumps with a die paste.
【0014】さらに、上記第1〜第4の実施の形態にお
いてはボールボンディング方式を利用した場合について
説明したが、半田バンプ等で用いられるメッキ方式を利
用した場合にも適用可能である。Further, in the above-mentioned first to fourth embodiments, the case of using the ball bonding method has been described, but it is also applicable to the case of using the plating method used for solder bumps or the like.
【0015】[0015]
【発明の効果】本願に係わるバンプを採用することによ
り、接触抵抗の増大やクラックによるオープン不良の発
生を防止することが可能となる。By adopting the bump according to the present invention, it becomes possible to prevent an increase in contact resistance and the occurrence of open defects due to cracks.
【図1】本願に係わる第1の実施の形態を示した図FIG. 1 is a diagram showing a first embodiment according to the present application.
【図2】本願に係わる第2の実施の形態を示した図FIG. 2 is a diagram showing a second embodiment according to the present application.
【図3】本願に係わる第3の実施の形態を示した図FIG. 3 is a diagram showing a third embodiment according to the present application.
【図4】本願に係わる第4の実施の形態を示した図FIG. 4 is a diagram showing a fourth embodiment according to the present application.
【図5】従来の技術に係わる図であり、フリップチップ
のバンプおよびその近傍の様子を示した図FIG. 5 is a diagram relating to a conventional technique, showing a state of a bump of a flip chip and its vicinity.
【図6】従来の技術に係わる図であり、バンプが形成さ
れたフリップチップをプリント基板等に実装した場合の
様子を示した図FIG. 6 is a diagram related to a conventional technique, showing a state in which a flip chip having bumps is mounted on a printed circuit board or the like.
1……バンプ 1b、1c、1d、1e……凹部 1 ... Bump 1b, 1c, 1d, 1e ... Recess
Claims (5)
とするフリップチップのバンプ。1. A flip-chip bump in which the upper surface of the bump is uneven.
徴とするフリップチップのバンプ。2. A flip-chip bump, characterized in that a recess is provided on the upper surface of the bump.
する請求項2に記載のフリップチップのバンプ。3. The bump of the flip chip according to claim 2, wherein the recess is a single hole.
する請求項2に記載のフリップチップのバンプ。4. The bump of the flip chip according to claim 2, wherein the recess is a plurality of holes.
とを特徴とする請求項2に記載のフリップチップのバン
プ。5. The bump of the flip chip according to claim 2, wherein the recess is a groove formed vertically and horizontally.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7253478A JPH0997794A (en) | 1995-09-29 | 1995-09-29 | Bump of flip chip |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7253478A JPH0997794A (en) | 1995-09-29 | 1995-09-29 | Bump of flip chip |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0997794A true JPH0997794A (en) | 1997-04-08 |
Family
ID=17251951
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7253478A Withdrawn JPH0997794A (en) | 1995-09-29 | 1995-09-29 | Bump of flip chip |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0997794A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10321667A (en) * | 1997-05-16 | 1998-12-04 | Ricoh Co Ltd | Semiconductor device |
KR20000026215A (en) * | 1998-10-19 | 2000-05-15 | 김영환 | Bottom lead package of semiconductor and manufacturing method thereof |
US6244499B1 (en) * | 1999-12-13 | 2001-06-12 | Advanced Semiconductor Engineering, Inc. | Structure of a ball bump for wire bonding and the formation thereof |
US7021521B2 (en) * | 1998-10-28 | 2006-04-04 | International Business Machines Corporation | Bump connection and method and apparatus for forming said connection |
-
1995
- 1995-09-29 JP JP7253478A patent/JPH0997794A/en not_active Withdrawn
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10321667A (en) * | 1997-05-16 | 1998-12-04 | Ricoh Co Ltd | Semiconductor device |
KR20000026215A (en) * | 1998-10-19 | 2000-05-15 | 김영환 | Bottom lead package of semiconductor and manufacturing method thereof |
US7021521B2 (en) * | 1998-10-28 | 2006-04-04 | International Business Machines Corporation | Bump connection and method and apparatus for forming said connection |
US6244499B1 (en) * | 1999-12-13 | 2001-06-12 | Advanced Semiconductor Engineering, Inc. | Structure of a ball bump for wire bonding and the formation thereof |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A300 | Withdrawal of application because of no request for examination |
Free format text: JAPANESE INTERMEDIATE CODE: A300 Effective date: 20021203 |